WO2022209292A1 - 載置盤および載置構造 - Google Patents
載置盤および載置構造 Download PDFInfo
- Publication number
- WO2022209292A1 WO2022209292A1 PCT/JP2022/004526 JP2022004526W WO2022209292A1 WO 2022209292 A1 WO2022209292 A1 WO 2022209292A1 JP 2022004526 W JP2022004526 W JP 2022004526W WO 2022209292 A1 WO2022209292 A1 WO 2022209292A1
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- WO
- WIPO (PCT)
- Prior art keywords
- heater
- main body
- peripheral side
- mounting
- mounting plate
- Prior art date
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/18—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor the conductor being embedded in an insulating material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/28—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
- H05B3/283—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material the insulating material being an inorganic material, e.g. ceramic
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/28—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
- H05B3/30—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material on or between metallic plates
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
- H05B2203/002—Heaters using a particular layout for the resistive material or resistive elements
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
- H05B2203/002—Heaters using a particular layout for the resistive material or resistive elements
- H05B2203/003—Heaters using a particular layout for the resistive material or resistive elements using serpentine layout
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
- H05B2203/013—Heaters using resistive films or coatings
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B2213/00—Aspects relating both to resistive heating and to induction heating, covered by H05B3/00 and H05B6/00
- H05B2213/07—Heating plates with temperature control means
Definitions
- the present invention relates to a mounting plate and a mounting structure for mounting a work.
- Patent Literature 1 discloses a ceramic plate provided with heater elements on the inner peripheral side and the outer peripheral side, respectively.
- ceramics have been generally used from the viewpoints of freedom of heater arrangement, contamination, heat resistance, and the like.
- the ceramic plate has different temperatures for the outer peripheral side and the inner peripheral side. Therefore, it is possible to obtain a mounting plate having a temperature gradient profile with a high temperature.
- the ceramic plate described in Patent Document 1 can be applied with a temperature gradient so that the temperature difference between the outer peripheral side and the inner peripheral side is about 10°C.
- the mounting plate described in Patent Document 1 is made of ceramic, the mounting plate may be damaged if the temperature difference between the outer peripheral side and the inner peripheral side is 10° C. or more.
- the present invention has been made in view of the above, and an object of the present invention is to provide a mounting plate and a mounting structure capable of increasing the temperature difference between the outer peripheral side and the inner peripheral side.
- a mounting plate includes a main body portion in which a flow path for circulating a medium for heat exchange is formed and a work is mounted,
- the main body is formed using a metal material and has a heater provided on the outer edge side of the main body.
- the temperature difference between the outer edge side and the inner side of the work mounting surface is 20° C. or more.
- the mounting plate according to the present invention is characterized in that, in the above invention, a heat insulating groove surrounding the flow path is formed in the main body.
- the mounting plate according to the present invention is characterized in that, in the above invention, the heater is provided closer to the outer edge of the main body than the heat insulation groove.
- the mounting plate according to the present invention is characterized in that, in the above invention, the heater is provided inside the main body portion rather than the heat insulation groove.
- the main body portion is formed by stacking a plurality of members, and among the plurality of members, a member having the workpiece mounting surface includes the flow path. is formed and the heater is provided.
- the mounting structure includes a workpiece, and a mounting plate having a body portion on which a flow path for circulating a medium for heat exchange is formed and the workpiece is mounted, wherein the body portion is formed using a metal material, has a heater provided on the outer edge side of the main body, drives the heater, and in a state in which the medium is circulated in the flow path, the workpiece placed on the main body
- the temperature difference between the outer edge side and the inner side of the placement surface is 20° C. or more
- the workpiece has a temperature difference of 20° C. or more between the minimum temperature and the maximum temperature when placed on the mounting platen. characterized by being
- the present invention it is possible to increase the temperature difference between the outer peripheral side and the inner peripheral side of the mounting plate and the work placed on the mounting plate.
- FIG. 1 is a plan view and a partial cross-sectional view showing the configuration of a mounting plate according to one embodiment of the present invention.
- FIG. 2 is a diagram for explaining an example of the temperature distribution of the plate portion when using the mounting plate according to the embodiment of the present invention.
- FIG. 3 is a cross-sectional view showing the configuration of the main part of the mounting plate according to Modification 1 of the embodiment of the present invention.
- FIG. 4 is a partial cross-sectional view showing the configuration of the mounting plate according to Modification 2 of the embodiment of the present invention.
- FIG. 1 is a plan view and a partial cross-sectional view showing the configuration of a mounting plate according to one embodiment of the present invention.
- (a) of FIG. 1 shows a surface (hereinafter referred to as a “work placement surface”) on which a workpiece (work W shown in (b) of FIG. 1) is placed on the mounting platen 1 in a direction orthogonal to the surface. It is a top view seen from the side.
- FIG. 1(b) is a partial cross-sectional view as seen from a direction parallel to the work placement surface.
- the mounting platen 1 is used, for example, to maintain the temperature of a work and to make the temperature distribution of the work uniform in heat treatment processes such as film formation and etching in semiconductor manufacturing.
- the workpiece is formed using compound semiconductors such as silicon, silicon carbide, sapphire, gallium phosphide (GaP), gallium arsenide (GaAs), indium phosphide (InP), and gallium nitride (GaN).
- compound semiconductors such as silicon, silicon carbide, sapphire, gallium phosphide (GaP), gallium arsenide (GaAs), indium phosphide (InP), and gallium nitride (GaN).
- GaP gallium phosphide
- GaAs gallium arsenide
- InP indium phosphide
- GaN gallium nitride
- the mounting platen 1 includes a disc-shaped plate portion 10 and a connecting portion 20 connected to the surface of the plate portion 10 opposite to the work mounting surface.
- the plate portion 10 is formed using a metal material.
- Metal materials include heavy metals, noble metals, and alloys thereof. Examples of metal materials include metals and alloys such as aluminum, aluminum alloys, titanium, titanium alloys, iron, iron-based alloys, copper, copper alloys, nickel, nickel-based alloys, molybdenum, tungsten, and gold.
- Iron-based alloys include, for example, stainless steel, Kovar, and 42 alloy.
- Nickel-based alloys include, for example, Inconel and Hastelloy.
- the plate portion 10 is formed by stacking four disc members (first disc member 11 to fourth disc member 14). Specifically, between the first disk member 11 on which the workpiece is placed and the fourth disk member 14 to which the connecting portion 20 is connected, the second disk member is placed in order from the first disk member 11 side. 12 and a third disc member 13 are located.
- the plate portion 10 is formed with a channel 15 through which a medium that promotes heat exchange flows, and a heat insulating groove 16 .
- the flow path 15 is a groove with a bottom formed on the surface of the first disc member 11 (having a work mounting surface) on which the work is mounted, opposite to the work mounting surface. It is formed by being closed by the surface of the second disc member 12 . Heat exchange is performed on the work mounting surface of the plate portion 10 by the flow of the medium through the flow path 15 .
- the flow path 15 may be formed by sandwiching a pipe body or tube between members.
- the medium flowing through the channel 15 is liquid such as water, or gas.
- the medium is introduced from the first opening 151, flows through the first disc member 11 over a wide range along the channel, and then passes through the second opening 152 to the outside of the first disc member 11. released to Heat exchange is performed between the medium and the plate portion 10 or the work by the circulation of the medium.
- the heat insulating grooves 16 are formed by connecting the bottomed grooves formed in the first disc member 11 and the third disc member 13 and the through holes formed in the second disc member 12 to each other. .
- the heat insulation groove 16 is formed so as to surround the flow path 15 .
- the heat insulating groove 16 forms a closed space and the inside is in a vacuum state will be described. It may be in a circulating state, or may be filled with a solvent, resin, or the like having high thermal stability.
- the plate portion 10 also includes a heater 18 that is provided radially outside (peripheral side) of the heat insulating grooves 16 .
- the heater 18 is driven under the control of a control device (not shown).
- the heater 18 is configured using, for example, a heating wire, and is arranged along the outer circumference of the first disk member 11 .
- the heater 18 is electrically connected to a control device provided in the semiconductor manufacturing device.
- the heater 18 is attached to the first disk member 11 by, for example, being embedded in the groove of the first disk member 11 and then covered with a thermal spray film or the like.
- the connecting part 20 is formed with a channel (not shown) through which a medium flows. Specifically, the connecting portion 20 receives the medium discharged from the second opening 152 while sending the medium to the first opening 151 through the channel.
- the connecting portion 20 connects to a medium supply source at the end opposite to the side connecting to the plate portion 10 .
- Sources may be tanks and pumps holding media, water pipes, and the like.
- the heater 18 heats the plate portion 10, and the heat absorption of the medium flowing through the flow path 15 adjusts the temperature. At this time, heat from the heater 18 is suppressed by the heat insulating grooves 16 from being transmitted to the inner peripheral side, and when thermal stress is generated, the stress escapes into the heat insulating grooves 16 to relax the stress.
- FIG. 2 is a diagram for explaining an example of the temperature distribution of the plate portion when using the mounting plate according to one embodiment of the present invention.
- FIG. 2(a) shows a partial cross-sectional view of the mounting platen 1.
- FIG. 2(b) shows a graph plotting the surface temperature at the corresponding position of the mounting table 1 shown in FIG. 2(a). The position passing through the center of the mounting plate 1 is assumed to be zero, one side is assumed to be the position in the positive direction, and the opposite direction is assumed to be the position in the negative direction.
- FIG. 2 shows the results of the measurement when the temperature of the heater 18 was set to 110.degree.
- the heater 18 is positioned at 155 mm and -155 mm, and the heat insulating groove 16 is positioned near 150 mm and -150 mm.
- the plate portion 10 there is a temperature difference between the outer peripheral side and the inner peripheral side. Specifically, there is a temperature difference of about 63° C. between the highest temperature of 155 mm and ⁇ 155 mm (110° C.) and the lowest temperature of zero (about 47° C.).
- the work mounted on the plate (corresponding to the mounting platen 1) has a uniform temperature distribution.
- the temperature on the outer peripheral side tends to be lower than on the inner peripheral side, and in the case of the conventional plate, the temperature on the outer peripheral side of the workpiece may drop.
- CVD Chemical Vapor Deposition
- ALD Advanced Layer Deposition
- the temperature difference between the inner peripheral side and the outer peripheral side can be adjusted according to the process.
- the mounting platen 1 by forming the mounting platen 1 from a metal material, it is possible to make the temperature difference larger than the temperature difference at which cracks occur due to ceramics.
- the temperature difference of the work mounting surface is, for example, 20° C. or higher and 100° C. or lower, and when a high temperature difference is required, it is 60° C. or higher and 100° C. or lower.
- This temperature range is set based on electrical leakage and the transformation temperature of the liquid.
- the temperature distribution of the work placed on the mounting plate 1 also has a profile equivalent to the temperature profile of the mounting plate 1.
- the difference between the minimum temperature and the maximum temperature of the work is 20° C. It is as follows.
- the mounting plate 1 has the plate portion 10 made of a metal material, the flow path 15 for circulating the medium for promoting heat exchange is formed, and the heater 18 is provided on the outer peripheral side. made it According to the present embodiment, heating and heat exchange are performed by the flow path 15 and the heater 18, so that the temperature difference between the outer peripheral side and the inner peripheral side can be increased compared to a ceramic plate. can be done.
- the heat-insulating grooves 16 suppress the heat from the heater 18 from being transferred to the inner peripheral side, and the solid portion of the plate portion 10 is blocked (disconnected) for the space of the heat-insulating grooves 16.
- the insulating grooves 16 act as a thermal block/choke because the heat flow is reduced due to the increased thermal resistance due to the reduced area).
- FIG. 3 is a cross-sectional view showing the configuration of the main part of the mounting plate according to Modification 1 of the embodiment of the present invention.
- the mounting plate according to Modification 1 further includes a heater 19 in addition to the mounting plate 1 described above. Since the configuration other than the heater 19 is the same as that of the mounting platen 1 described above, the description thereof is omitted.
- the heater 19 (inner peripheral side heater) is provided on the outer peripheral side of the mounting plate and on the radially inner side (inner peripheral side) of the heat insulating groove 16 . That is, the heater 19 is provided on the opposite side of the heater 18 (the outer heater) with the heat insulating groove 16 interposed therebetween.
- the plate portion 10 can be heated on the outer peripheral side and the inner peripheral side of the heat insulating grooves 16 . At this time, the temperature distribution of the plate portion 10 can be controlled by adjusting the outputs of the heaters 18 and 19 individually.
- the plate portion 10 made of a metal material is formed with the flow path 15 for circulating the medium that promotes heat exchange. Since the heater 18 is provided in the plate, the temperature difference between the outer peripheral side and the inner peripheral side can be increased as compared with a ceramic plate.
- heaters are provided on both sides of the heat insulating grooves 16, so that the temperature distribution can be adjusted more finely.
- FIG. 4 is a partial cross-sectional view showing the configuration of the mounting plate according to Modification 2 of the embodiment of the present invention.
- a mounting platen 1 ⁇ /b>A according to Modification 2 includes a plate portion 30 instead of the plate portion 10 of the mounting platen 1 described above. Since the configuration other than the plate portion 30 is the same as that of the mounting platen 1 described above, the description thereof is omitted.
- the plate portion 30 is formed using a metal material.
- the metal material metals and alloys similar to those of the plate portion 10 can be used.
- the plate portion 30 is formed by stacking three disc members (first disc member 31 to third disc member 33). Specifically, the second disc member 32 is positioned between the first disc member 31 on which the workpiece is placed and the third disc member 33 to which the connecting portion 20 is connected.
- the plate portion 30 is formed with a channel 15 through which a medium that promotes heat exchange flows, and a heat insulating groove 16 .
- the plate portion 30 also includes a heater 18 that is provided radially outside (on the outer peripheral side) of the heat insulating grooves 16 .
- the first disk member 31 has a body portion 311 and a lid portion 312 .
- the lid portion 312 is made of, for example, aluminum or an aluminum alloy, and may be made of the same material as the main body portion 311, the second disc member 32, and the third disc member 33, or may be made of a different material.
- the channel 15 is formed by covering a groove formed in the body portion 311 with the lid portion 312 .
- the heat insulating groove 16 is formed by covering the groove formed in the main body portion 311 and the second disk member 32 with the lid portion 312 .
- the heater 18 is fixed to the first disk member 31 by being covered with the lid portion 312 while being arranged on the main body portion 311 .
- the mounting plate according to Modification 2 has the plate portion 30 made of a metal material and the flow path 15 for circulating the medium that promotes heat exchange. Since the heater 18 is provided in the plate, the temperature difference between the outer peripheral side and the inner peripheral side can be increased as compared with a ceramic plate.
- one heater 18 or 19 is provided on each of the outer peripheral side and the inner peripheral side of the heat insulating groove 16 in the cross section.
- the number of heaters 18 and 19 in the cross section may be the same or different.
- a plurality of heaters 18 may be provided on the outer peripheral side
- a plurality of heaters 19 may be provided on the inner peripheral side
- a plurality of heaters 18 and 19 may be provided on the outer peripheral side and the inner peripheral side, respectively.
- the heat exchange plate may promote heat exchange for warming the target member.
- a medium such as hot water or a heat-giving gas such as warm air flows through the flow path 15 through the heat exchange plate.
- the plate portion 10 is formed by stacking four disc members, but the number is not limited to four.
- it may be formed by laminating two members, or one member may be formed with the flow path 15 and the heat insulating grooves 16 and the heaters 18 and 19 may be provided.
- the plate portion 10 has been described as an example in which it has a disc shape, but it is not limited to a disc shape, and may have, for example, a prism shape.
- the mounting plate and mounting structure according to the present invention are suitable for increasing the temperature difference between the outer peripheral side and the inner peripheral side.
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- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Surface Heating Bodies (AREA)
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Abstract
Description
図1は、本発明の一実施の形態にかかる載置盤の構成を示す平面図および部分断面図である。図1の(a)は、載置盤1のワーク(図1の(b)に示すワークW)を載置する面(以下、「ワーク載置面」という)を、該面と直交する方向からみた平面図である。図1の(b)は、ワーク載置面と平行な方向からみた部分断面図である。載置盤1は、例えば、半導体製造における、成膜処理やエッチング処理等の熱処理工程において、ワークの温度を維持させたり、ワークの温度分布を均一化させたりするために用いられる。ここで、ワークは、シリコン、シリコンカーバイド、サファイアや、リン化ガリウム(GaP)、ヒ化ガリウム(GaAs)、リン化インジウム(InP)、窒化ガリウム(GaN)等の化合物半導体を用いて形成される。なお、載置盤1にワークWを載置した状態(図1の(b)参照)の構成が、載置構造に相当する。
流路15を流通する媒体は、例えば水等の液体や、気体である。流路15は、例えば、第1開口部151から媒体が導入され、流路に沿って第1円板部材11を広範囲にわたって流れた後、第2開口部152から第1円板部材11の外部に放出される。媒体の流通によって、該媒体とプレート部10やワークとの間で熱交換が行われる。
このほか、プロセスに応じて内周側と外周側の温度差を調整することができる。
本実施の形態では、載置盤1を金属材料で形成することによって、セラミックによって割れが発生する温度差よりも大きな温度差とすることができる。ワーク載置面の温度差としては、例えば20℃以上100℃以下であり、高い温度差が求められる場合には60℃以上100℃以下である。この温度範囲は、漏電や、液体の変態温度に基づいて設定される。この際、載置盤1に載置されたワークの温度分布も、載置盤1の温度プロファイルと同等のプロファイルとなり、例えば、当該ワークにおける最低温度と最高温度との差が20℃以上100℃以下となる。
次に、上述した実施の形態の変形例1について、図3を参照して説明する。図3は、本発明の実施の形態の変形例1にかかる載置盤の要部の構成を示す断面図である。変形例1にかかる載置盤は、上述した載置盤1に対し、ヒーター19をさらに備える。ヒーター19以外の構成は、上述した載置盤1と同じであるため説明を省略する。
次に、上述した実施の形態の変形例2について、図4を参照して説明する。図4は、本発明の実施の形態の変形例2にかかる載置盤の構成を示す部分断面図である。変形例2にかかる載置盤1Aは、上述した載置盤1に対し、プレート部10に代えてプレート部30を備える。プレート部30以外の構成は、上述した載置盤1と同じであるため説明を省略する。
流路15は、本体部311に形成された溝を蓋部312が覆うことによって形成される。また、断熱溝16は、本体部311および第2円板部材32に形成される溝を蓋部312が覆うことによって形成される。
さらに、ヒーター18は、本体部311上に配置された状態で蓋部312に覆われることによって第1円板部材31に固定される。
10、30 プレート部
11、31 第1円板部材
12、32 第2円板部材
13、33 第3円板部材
14 第4円板部材
15 流路
16 断熱溝
18、19 ヒーター
20 接続部
311 本体部
312 蓋部
Claims (6)
- 熱交換を行う媒体を流通させる流路が形成され、ワークが載置される本体部、
を備え、
前記本体部は、金属材料を用いて形成され、
当該本体部の外縁側に設けられるヒーターを有し、
前記ヒーターを駆動し、前記流路に前記媒体を流通させた状態において、当該本体部の前記ワーク載置面における外縁側と内部側との温度差が、20℃以上である、
ことを特徴とする載置盤。 - 前記本体部には、前記流路を囲む断熱溝が形成される、
ことを特徴とする請求項1に記載の載置盤。 - 前記ヒーターは、
前記断熱溝よりも、前記本体部の外縁側に設けられる、
ことを特徴とする請求項2に記載の載置盤。 - 前記ヒーターは、
前記断熱溝よりも、前記本体部の内部側に設けられる、
ことを特徴とする請求項2または3に記載の載置盤。 - 前記本体部は、複数の部材を積層してなり、
前記複数の部材のうち、前記ワーク載置面を有する部材に、前記流路が形成されるとともに、前記ヒーターが設けられる、
ことを特徴とする請求項1~4のいずれか一つに記載の載置盤。 - ワークと、
熱交換を行う媒体を流通させる流路が形成され、前記ワークが載置される本体部を有する載置盤と、
を備え、
前記本体部は、金属材料を用いて形成され、
当該本体部の外縁側に設けられるヒーターを有し、
前記ヒーターを駆動し、前記流路に前記媒体を流通させた状態において、当該本体部の前記ワーク載置面における外縁側と内部側との温度差が、20℃以上であり、
前記ワークは、前記載置盤に載置された状態において、最低温度と最高温度との温度差が20℃以上である、
ことを特徴とする載置構造。
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KR1020237033026A KR20230149836A (ko) | 2021-03-30 | 2022-02-04 | 재치반 및 재치 구조 |
CN202280025105.5A CN117083704A (zh) | 2021-03-30 | 2022-02-04 | 载置板及载置构造 |
EP22779521.8A EP4319482A1 (en) | 2021-03-30 | 2022-02-04 | Placement panel and placement structure |
US18/284,928 US20240178049A1 (en) | 2021-03-30 | 2022-02-04 | Placement board and placement structure |
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JP2021-058621 | 2021-03-30 | ||
JP2021058621A JP2022155221A (ja) | 2021-03-30 | 2021-03-30 | 載置盤および載置構造 |
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WO2022209292A1 true WO2022209292A1 (ja) | 2022-10-06 |
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US (1) | US20240178049A1 (ja) |
EP (1) | EP4319482A1 (ja) |
JP (1) | JP2022155221A (ja) |
KR (1) | KR20230149836A (ja) |
CN (1) | CN117083704A (ja) |
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WO2018030433A1 (ja) | 2016-08-10 | 2018-02-15 | 日本碍子株式会社 | セラミックヒータ |
US20190204029A1 (en) * | 2017-12-28 | 2019-07-04 | Asm Ip Holding B.V. | Cooling system, substrate processing system and flow rate adjusting method for cooling medium |
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KR100782395B1 (ko) * | 2004-02-23 | 2007-12-07 | 쿄세라 코포레이션 | 세라믹 히터, 그것을 이용한 웨이퍼 가열장치 및 반도체 기판 제조방법 |
JP2009152475A (ja) * | 2007-12-21 | 2009-07-09 | Shinko Electric Ind Co Ltd | 基板温調固定装置 |
JP5544121B2 (ja) * | 2009-07-21 | 2014-07-09 | 株式会社日立国際電気 | 加熱装置、基板処理装置、及び半導体装置の製造方法 |
US9831111B2 (en) * | 2014-02-12 | 2017-11-28 | Applied Materials, Inc. | Apparatus and method for measurement of the thermal performance of an electrostatic wafer chuck |
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JP6986937B2 (ja) * | 2017-01-05 | 2021-12-22 | 東京エレクトロン株式会社 | プラズマ処理装置 |
-
2021
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2022
- 2022-02-04 US US18/284,928 patent/US20240178049A1/en active Pending
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- 2022-02-04 EP EP22779521.8A patent/EP4319482A1/en active Pending
- 2022-02-04 KR KR1020237033026A patent/KR20230149836A/ko unknown
- 2022-02-04 WO PCT/JP2022/004526 patent/WO2022209292A1/ja active Application Filing
- 2022-03-07 TW TW111108133A patent/TWI788236B/zh active
Patent Citations (5)
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JP2007258607A (ja) * | 2006-03-24 | 2007-10-04 | Ngk Insulators Ltd | 静電チャック |
JP2009117486A (ja) * | 2007-11-02 | 2009-05-28 | Nippon Dennetsu Co Ltd | サセプタ |
JP2017195060A (ja) * | 2016-04-19 | 2017-10-26 | 日本特殊陶業株式会社 | 加熱部材及び複合加熱部材 |
WO2018030433A1 (ja) | 2016-08-10 | 2018-02-15 | 日本碍子株式会社 | セラミックヒータ |
US20190204029A1 (en) * | 2017-12-28 | 2019-07-04 | Asm Ip Holding B.V. | Cooling system, substrate processing system and flow rate adjusting method for cooling medium |
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CN117083704A (zh) | 2023-11-17 |
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KR20230149836A (ko) | 2023-10-27 |
TWI788236B (zh) | 2022-12-21 |
US20240178049A1 (en) | 2024-05-30 |
EP4319482A1 (en) | 2024-02-07 |
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