JP6076246B2 - ゾーン依存熱効率性を備えた温度制御されたプラズマ処理チャンバ部品 - Google Patents
ゾーン依存熱効率性を備えた温度制御されたプラズマ処理チャンバ部品 Download PDFInfo
- Publication number
- JP6076246B2 JP6076246B2 JP2013514240A JP2013514240A JP6076246B2 JP 6076246 B2 JP6076246 B2 JP 6076246B2 JP 2013514240 A JP2013514240 A JP 2013514240A JP 2013514240 A JP2013514240 A JP 2013514240A JP 6076246 B2 JP6076246 B2 JP 6076246B2
- Authority
- JP
- Japan
- Prior art keywords
- channel
- length
- heat transfer
- temperature
- component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000012545 processing Methods 0.000 title claims description 62
- 230000001419 dependent effect Effects 0.000 title description 2
- 239000013529 heat transfer fluid Substances 0.000 claims description 88
- 238000012546 transfer Methods 0.000 claims description 69
- 239000012530 fluid Substances 0.000 claims description 17
- 238000009413 insulation Methods 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 9
- 239000003779 heat-resistant material Substances 0.000 claims description 5
- 238000009826 distribution Methods 0.000 claims description 4
- 239000007769 metal material Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 description 20
- 230000008569 process Effects 0.000 description 14
- 238000001020 plasma etching Methods 0.000 description 11
- 238000001816 cooling Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 239000002826 coolant Substances 0.000 description 7
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000007788 liquid Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000010348 incorporation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- RVZRBWKZFJCCIB-UHFFFAOYSA-N perfluorotributylamine Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)N(C(F)(F)C(F)(F)C(F)(F)C(F)(F)F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F RVZRBWKZFJCCIB-UHFFFAOYSA-N 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000010421 standard material Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32908—Utilities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28D—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
- F28D21/00—Heat-exchange apparatus not covered by any of the groups F28D1/00 - F28D20/00
- F28D2021/0019—Other heat exchangers for particular applications; Heat exchange systems not otherwise provided for
- F28D2021/0028—Other heat exchangers for particular applications; Heat exchange systems not otherwise provided for for cooling heat generating elements, e.g. for cooling electronic components or electric devices
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F7/00—Elements not covered by group F28F1/00, F28F3/00 or F28F5/00
- F28F7/02—Blocks traversed by passages for heat-exchange media
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Plasma & Fusion (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Description
本発明の実施形態は、概してプラズマ処理装置に関し、特に、プラズマ処理チャンバ内でワークピースの処理中に温度を制御する方法に関する。
プラズマ処理チャンバ(例えば、プラズマエッチング又はプラズマ蒸着チャンバ)内では、チャンバ部品の温度は、しばしば処理の間に制御すべき重要なパラメータである。例えば、基板ホルダー(一般にチャック又は台座と呼ばれる)の温度は、(例えば、エッチング速度を制御するために)処理レシピの間においてワークピースを様々な制御された温度に加熱/冷却するために制御することができる。同様に、シャワーヘッド/上部電極又は他の部品の温度も、処理(例えば、エッチングレートの均一性)に影響を与えるように処理レシピの間に制御することができる。
)を有する。実施形態では、異なる熱伝達率又は伝熱面積が温度ゾーンの関数として提供されており、これによって第1及び第2温度ゾーンの温度制御をより独立にする。
及び
の項)を誘導し、図1Bに示されるように、部品の作業面温度に大きな変化を誘導する可能性がある。それにもかかわらず、他のハードウェアの制約(例えば、処理ガス分配アセンブリ、リフトピンアセンブリ等)は、そのような流体チャネルのレイアウトを促す場合がある。
Claims (12)
- プラズマ処理チャンバ部品であって、
プラズマ処理チャンバ内に配置された作業面と、
作業面の下にあるに部品内に配置された第1チャネルであって、第1チャネルは、第1熱伝導流体を伝導するためのものであり、作業面の第1温度ゾーンの下にある第1チャネルの第1長さは、作業面の第2温度ゾーンの下にある第1チャネルの第2長さよりも低い熱伝達率を含み、第1チャネルの第2長さは、第1チャネルの第1長さの下流に流体連通しており、第1チャネルの第2長さは、作業面の第2温度ゾーンの温度を制御するためのものである第1チャネルと、
作業面の第1温度ゾーンの下にある部品内に配置された第2チャネルであって、第2チャネルは、第2熱伝導流体を伝導するためのものであり、第1チャネルは、第2チャネルから分離されており、第1チャネルの第1長さに沿った熱伝達率は、第1温度ゾーン内の第2チャネルの長さに沿ったものよりも低く、第2チャネルの長さは、作業面の第1温度ゾーンの温度を制御するためのものである第2チャネルとを含むプラズマ処理チャンバ部品。 - 第1温度ゾーンは、第2温度ゾーンに隣接して配置される請求項1記載の部品。
- 第1チャネルは、第1チャネルの第2長さの下流にあり第1温度ゾーンの下にある第3長さを更に含み、第1チャネルの第3長さに沿った熱伝達率は、第1チャネルの第2長さに沿ったものよりも低い請求項2記載の部品。
- 第1チャネルの第1長さは、第2長さに対して熱抵抗を高める熱抵抗材料のチャネルスリーブを含む請求項1記載の部品。
- 第1チャネルは、第2長さに沿ってよりも第1長さに沿って作業面の下により大きな距離で配置されている請求項4記載の部品。
- 断熱層が、第1チャネルと、第1チャネルの第1長さの少なくとも一部に沿った作業面との間に配置され、これによって第1チャネルの第2長さに対して熱抵抗を高める請求項4記載の部品。
- 断熱層は、排気された空間又は非金属材料を含む請求項6記載の部品。
- 第1チャネルの第1長さに沿った伝熱面積は、第1チャネルの第2長さに沿ったものよりも小さい請求項1記載の部品。
- 第1チャネルは、第2長さに沿って第1長さには無い多数のフィンを含む請求項1記載の部品。
- 第1チャネルの第1長さは、第1チャネルの第2長さの第2断面積よりも大きな第1断面積を有し、これによって第1チャネルの第1長さと第2長さの間の流速を変化させる請求項1記載の部品。
- 処理チャンバ内に配置されたワークピースの処理中にプラズマを励起するために処理チャンバに結合されたプラズマ電源と、
第1熱伝導流体ループによってヒートソース又はシンクに結合された温度制御された部品を含む処理チャンバであって、第1流体ループは温度制御された部品に埋め込まれた第1チャネルの第1及び第2長さを通過し、第1チャネルの第1長さは部品の第1温度ゾーンの下にあり、第1チャネルの第2長さは部品の第2温度ゾーンの下にあり、第1チャネルの第1長さは第1チャネルの第2長さよりも低い熱伝達率を含み、第1チャネルの第2長さは第1チャネルの第1長さの下流に流体連通しており、第1チャネルの第2長さは部品の第2温度ゾーンの温度を制御するためのものである処理チャンバと、
作業面の第1温度ゾーンの下にある部品内に配置された第2チャネルを有する第2熱伝導流体ループであって、第1チャネルは第2チャネルから分離しており、第1チャネルの第1長さに沿った熱伝達率は第1温度ゾーン内の第2チャネルの長さに沿ったものよりも低く、第2チャネルの長さは部品の第1温度ゾーンの温度を制御するためのものである第2熱伝導流体ループとを含むプラズマ処理装置。 - 温度制御された部品は、ガス分配シャワーヘッド又は基板支持チャックであり、第1温度ゾーンは、第2温度ゾーンを囲むシャワーヘッド又はチャックの環状部分を含む請求項11記載のプラズマ処理装置。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US35415810P | 2010-06-11 | 2010-06-11 | |
US61/354,158 | 2010-06-11 | ||
US13/111,384 US8608852B2 (en) | 2010-06-11 | 2011-05-19 | Temperature controlled plasma processing chamber component with zone dependent thermal efficiencies |
US13/111,384 | 2011-05-19 | ||
PCT/US2011/039183 WO2011156240A2 (en) | 2010-06-11 | 2011-06-03 | Temperature controlled plasma processing chamber component with zone dependent thermal efficiencies |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013535099A JP2013535099A (ja) | 2013-09-09 |
JP6076246B2 true JP6076246B2 (ja) | 2017-02-08 |
Family
ID=45095390
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013514240A Active JP6076246B2 (ja) | 2010-06-11 | 2011-06-03 | ゾーン依存熱効率性を備えた温度制御されたプラズマ処理チャンバ部品 |
Country Status (6)
Country | Link |
---|---|
US (2) | US8608852B2 (ja) |
JP (1) | JP6076246B2 (ja) |
KR (2) | KR101737474B1 (ja) |
CN (1) | CN102870503B (ja) |
TW (2) | TWI622089B (ja) |
WO (1) | WO2011156240A2 (ja) |
Families Citing this family (47)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8709162B2 (en) * | 2005-08-16 | 2014-04-29 | Applied Materials, Inc. | Active cooling substrate support |
JP2010016225A (ja) * | 2008-07-04 | 2010-01-21 | Tokyo Electron Ltd | 温度調節機構および温度調節機構を用いた半導体製造装置 |
US9338871B2 (en) | 2010-01-29 | 2016-05-10 | Applied Materials, Inc. | Feedforward temperature control for plasma processing apparatus |
US8916793B2 (en) * | 2010-06-08 | 2014-12-23 | Applied Materials, Inc. | Temperature control in plasma processing apparatus using pulsed heat transfer fluid flow |
US8880227B2 (en) | 2010-05-27 | 2014-11-04 | Applied Materials, Inc. | Component temperature control by coolant flow control and heater duty cycle control |
US8591755B2 (en) * | 2010-09-15 | 2013-11-26 | Lam Research Corporation | Methods for controlling plasma constituent flux and deposition during semiconductor fabrication and apparatus for implementing the same |
US10274270B2 (en) | 2011-10-27 | 2019-04-30 | Applied Materials, Inc. | Dual zone common catch heat exchanger/chiller |
JP5973731B2 (ja) * | 2012-01-13 | 2016-08-23 | 東京エレクトロン株式会社 | プラズマ処理装置及びヒータの温度制御方法 |
US20130284372A1 (en) * | 2012-04-25 | 2013-10-31 | Hamid Tavassoli | Esc cooling base for large diameter subsrates |
US9984906B2 (en) * | 2012-05-25 | 2018-05-29 | Tokyo Electron Limited | Plasma processing device and plasma processing method |
US20150153116A1 (en) * | 2012-07-27 | 2015-06-04 | Kyocera Corporation | Flow path member, and heat exchanger and semiconductor manufacturing device using same |
US20140069130A1 (en) * | 2012-09-10 | 2014-03-13 | Semicat, Inc. | Temperature control of semiconductor processing chambers |
US20140069334A1 (en) * | 2012-09-10 | 2014-03-13 | Semicat, Inc. | Temperature control of semiconductor processing chambers by modulating plasma generation energy |
US8970114B2 (en) * | 2013-02-01 | 2015-03-03 | Lam Research Corporation | Temperature controlled window of a plasma processing chamber component |
TWM492529U (zh) * | 2013-03-14 | 2014-12-21 | Applied Materials Inc | 使用具有加熱器的基板支撐台的基板支撐組件 |
US10297459B2 (en) | 2013-09-20 | 2019-05-21 | Lam Research Corporation | Technique to deposit sidewall passivation for high aspect ratio cylinder etch |
JP6018606B2 (ja) * | 2014-06-27 | 2016-11-02 | 東京エレクトロン株式会社 | 温度制御可能なステージを含むシステム、半導体製造装置及びステージの温度制御方法 |
US9837254B2 (en) | 2014-08-12 | 2017-12-05 | Lam Research Corporation | Differentially pumped reactive gas injector |
US10825652B2 (en) | 2014-08-29 | 2020-11-03 | Lam Research Corporation | Ion beam etch without need for wafer tilt or rotation |
US9406535B2 (en) | 2014-08-29 | 2016-08-02 | Lam Research Corporation | Ion injector and lens system for ion beam milling |
US9536748B2 (en) | 2014-10-21 | 2017-01-03 | Lam Research Corporation | Use of ion beam etching to generate gate-all-around structure |
US9887097B2 (en) | 2014-12-04 | 2018-02-06 | Lam Research Corporation | Technique to deposit sidewall passivation for high aspect ratio cylinder etch |
US9384998B2 (en) | 2014-12-04 | 2016-07-05 | Lam Research Corporation | Technique to deposit sidewall passivation for high aspect ratio cylinder etch |
US10170324B2 (en) | 2014-12-04 | 2019-01-01 | Lam Research Corporation | Technique to tune sidewall passivation deposition conformality for high aspect ratio cylinder etch |
US9620377B2 (en) | 2014-12-04 | 2017-04-11 | Lab Research Corporation | Technique to deposit metal-containing sidewall passivation for high aspect ratio cylinder etch |
JP5841281B1 (ja) * | 2015-06-15 | 2016-01-13 | 伸和コントロールズ株式会社 | プラズマ処理装置用チラー装置 |
WO2016210301A1 (en) * | 2015-06-26 | 2016-12-29 | Tokyo Electron Limited | Gas phase etching system and method |
US9543148B1 (en) | 2015-09-01 | 2017-01-10 | Lam Research Corporation | Mask shrink layer for high aspect ratio dielectric etch |
US9779955B2 (en) | 2016-02-25 | 2017-10-03 | Lam Research Corporation | Ion beam etching utilizing cryogenic wafer temperatures |
US10780447B2 (en) * | 2016-04-26 | 2020-09-22 | Applied Materials, Inc. | Apparatus for controlling temperature uniformity of a showerhead |
US20180143332A1 (en) * | 2016-11-18 | 2018-05-24 | Plasma-Therm Llc | Ion Filter |
US10604841B2 (en) | 2016-12-14 | 2020-03-31 | Lam Research Corporation | Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition |
US20180286707A1 (en) * | 2017-03-30 | 2018-10-04 | Lam Research Corporation | Gas additives for sidewall passivation during high aspect ratio cryogenic etch |
US10276398B2 (en) | 2017-08-02 | 2019-04-30 | Lam Research Corporation | High aspect ratio selective lateral etch using cyclic passivation and etching |
US10867812B2 (en) | 2017-08-30 | 2020-12-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor manufacturing system and control method |
US10515815B2 (en) | 2017-11-21 | 2019-12-24 | Lam Research Corporation | Atomic layer deposition and etch in a single plasma chamber for fin field effect transistor formation |
US10658174B2 (en) * | 2017-11-21 | 2020-05-19 | Lam Research Corporation | Atomic layer deposition and etch for reducing roughness |
US10734238B2 (en) | 2017-11-21 | 2020-08-04 | Lam Research Corporation | Atomic layer deposition and etch in a single plasma chamber for critical dimension control |
CN111433902A (zh) | 2017-12-08 | 2020-07-17 | 朗姆研究公司 | 向下游室传送自由基和前体气体以实现远程等离子体膜沉积的有改进的孔图案的集成喷头 |
CN112352064A (zh) * | 2018-06-08 | 2021-02-09 | 应用材料公司 | 用于平板处理设备的温度控制基座 |
US10900124B2 (en) * | 2018-06-12 | 2021-01-26 | Lam Research Corporation | Substrate processing chamber with showerhead having cooled faceplate |
JP2022522419A (ja) | 2019-02-28 | 2022-04-19 | ラム リサーチ コーポレーション | 側壁洗浄によるイオンビームエッチング |
JP7373963B2 (ja) * | 2019-10-01 | 2023-11-06 | 東京エレクトロン株式会社 | 基板支持器及びプラズマ処理装置 |
JP7364547B2 (ja) * | 2020-09-25 | 2023-10-18 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置およびプログラム |
JP7519874B2 (ja) | 2020-10-27 | 2024-07-22 | 東京エレクトロン株式会社 | プラズマ処理装置 |
CN114496692B (zh) * | 2020-11-11 | 2024-03-12 | 中微半导体设备(上海)股份有限公司 | 加热组件、基片承载组件及其等离子体处理装置 |
US11913563B2 (en) | 2021-12-30 | 2024-02-27 | Applied Materials, Inc. | Temperature actuated valve and methods of use thereof |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5540899A (en) * | 1994-12-22 | 1996-07-30 | Uop | BI-directional control of temperatures in reactant channels |
US5644467A (en) | 1995-09-28 | 1997-07-01 | Applied Materials, Inc. | Method and structure for improving gas breakdown resistance and reducing the potential of arcing in a electrostatic chuck |
US5846375A (en) * | 1996-09-26 | 1998-12-08 | Micron Technology, Inc. | Area specific temperature control for electrode plates and chucks used in semiconductor processing equipment |
CN100441391C (zh) * | 1997-04-16 | 2008-12-10 | 哈斯基注模系统有限公司 | 非晶体塑料制品的局部结晶方法和装置 |
US6106625A (en) * | 1997-12-02 | 2000-08-22 | Applied Materials, Inc. | Reactor useful for chemical vapor deposition of titanium nitride |
JPH11329926A (ja) * | 1998-05-11 | 1999-11-30 | Dainippon Screen Mfg Co Ltd | 基板冷却装置および基板冷却方法 |
US6125025A (en) | 1998-09-30 | 2000-09-26 | Lam Research Corporation | Electrostatic dechucking method and apparatus for dielectric workpieces in vacuum processors |
US6606234B1 (en) | 2000-09-05 | 2003-08-12 | Saint-Gobain Ceramics & Plastics, Inc. | Electrostatic chuck and method for forming an electrostatic chuck having porous regions for fluid flow |
JP2002129331A (ja) * | 2000-10-24 | 2002-05-09 | Sony Corp | 成膜装置および処理装置 |
JP5000842B2 (ja) * | 2001-03-02 | 2012-08-15 | 東京エレクトロン株式会社 | サセプタの駆動温度制御のための方法並びに装置 |
US6664738B2 (en) * | 2002-02-27 | 2003-12-16 | Hitachi, Ltd. | Plasma processing apparatus |
US7195693B2 (en) * | 2002-06-05 | 2007-03-27 | Advanced Thermal Sciences | Lateral temperature equalizing system for large area surfaces during processing |
JP2003243492A (ja) * | 2003-02-19 | 2003-08-29 | Hitachi High-Technologies Corp | ウエハ処理装置とウエハステージ及びウエハ処理方法 |
WO2004095531A2 (en) * | 2003-03-28 | 2004-11-04 | Tokyo Electron Ltd | Method and system for temperature control of a substrate |
CN100495655C (zh) * | 2003-09-03 | 2009-06-03 | 东京毅力科创株式会社 | 气体处理装置和散热方法 |
KR100508754B1 (ko) * | 2003-12-22 | 2005-08-17 | 삼성전자주식회사 | 온도 컨트롤러 및 이를 갖는 식각 장치 |
US7544251B2 (en) * | 2004-10-07 | 2009-06-09 | Applied Materials, Inc. | Method and apparatus for controlling temperature of a substrate |
KR100674922B1 (ko) * | 2004-12-02 | 2007-01-26 | 삼성전자주식회사 | 포커스 링을 냉각하는 냉각 유로를 가지는 웨이퍼지지장치 |
US8012304B2 (en) * | 2005-10-20 | 2011-09-06 | Applied Materials, Inc. | Plasma reactor with a multiple zone thermal control feed forward control apparatus |
US7557328B2 (en) * | 2006-09-25 | 2009-07-07 | Tokyo Electron Limited | High rate method for stable temperature control of a substrate |
JP4564973B2 (ja) * | 2007-01-26 | 2010-10-20 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
US7649729B2 (en) * | 2007-10-12 | 2010-01-19 | Applied Materials, Inc. | Electrostatic chuck assembly |
JP5210706B2 (ja) * | 2008-05-09 | 2013-06-12 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置及びプラズマ処理方法 |
US8596336B2 (en) | 2008-06-03 | 2013-12-03 | Applied Materials, Inc. | Substrate support temperature control |
US20100116788A1 (en) | 2008-11-12 | 2010-05-13 | Lam Research Corporation | Substrate temperature control by using liquid controlled multizone substrate support |
-
2011
- 2011-05-19 US US13/111,384 patent/US8608852B2/en active Active
- 2011-06-03 KR KR1020147014120A patent/KR101737474B1/ko not_active Application Discontinuation
- 2011-06-03 CN CN201180021881.XA patent/CN102870503B/zh active Active
- 2011-06-03 JP JP2013514240A patent/JP6076246B2/ja active Active
- 2011-06-03 KR KR1020127032543A patent/KR101475424B1/ko active IP Right Grant
- 2011-06-03 WO PCT/US2011/039183 patent/WO2011156240A2/en active Application Filing
- 2011-06-08 TW TW103131403A patent/TWI622089B/zh active
- 2011-06-08 TW TW100120028A patent/TWI456638B/zh active
-
2013
- 2013-11-22 US US14/087,976 patent/US20140083978A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
KR20140071508A (ko) | 2014-06-11 |
CN102870503A (zh) | 2013-01-09 |
KR101737474B1 (ko) | 2017-05-18 |
WO2011156240A2 (en) | 2011-12-15 |
TWI622089B (zh) | 2018-04-21 |
US20140083978A1 (en) | 2014-03-27 |
WO2011156240A3 (en) | 2012-01-26 |
CN102870503B (zh) | 2016-02-24 |
TW201447995A (zh) | 2014-12-16 |
KR101475424B1 (ko) | 2014-12-22 |
TW201230166A (en) | 2012-07-16 |
JP2013535099A (ja) | 2013-09-09 |
TWI456638B (zh) | 2014-10-11 |
KR20130020956A (ko) | 2013-03-04 |
US8608852B2 (en) | 2013-12-17 |
US20110303641A1 (en) | 2011-12-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6076246B2 (ja) | ゾーン依存熱効率性を備えた温度制御されたプラズマ処理チャンバ部品 | |
US12002661B2 (en) | Susceptor having cooling device | |
US10622229B2 (en) | Electrostatic chuck with independent zone cooling and reduced crosstalk | |
US11322337B2 (en) | Plasma processing system workpiece carrier with thermally isolated heater plate blocks | |
JP5546552B2 (ja) | 液体を制御された複数領域基板支持体による改良基板温度制御 | |
JP4745961B2 (ja) | 温度制御された基板支持体表面を有する基板支持体及びその制御方法並びに半導体処理装置及びその方法 | |
TWI481297B (zh) | 控制空間溫度分布之方法及裝置 | |
KR102652012B1 (ko) | 웨이퍼 프로세싱 시스템들을 위한 열 관리 시스템들 및 방법들 | |
TWI587352B (zh) | 使用比例控制閥和脈衝閥之組合的元件溫度控制 | |
WO2014116434A1 (en) | Substrate processing chamber components incorporating anisotropic materials | |
TWI787514B (zh) | 基板載置台及基板處理裝置 | |
TW202331826A (zh) | 具快速排熱能力之高溫基座 | |
JP2022155221A (ja) | 載置盤および載置構造 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20140602 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20150217 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150224 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20150521 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20150623 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20150723 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150824 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20160216 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20160513 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20160713 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160729 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20161213 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20170110 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6076246 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |