CN102870503B - 具有区域依赖性热效率的温度受控等离子体处理腔室部件 - Google Patents

具有区域依赖性热效率的温度受控等离子体处理腔室部件 Download PDF

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Publication number
CN102870503B
CN102870503B CN201180021881.XA CN201180021881A CN102870503B CN 102870503 B CN102870503 B CN 102870503B CN 201180021881 A CN201180021881 A CN 201180021881A CN 102870503 B CN102870503 B CN 102870503B
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length
heat transfer
temperature
passage
transfer fluid
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Chinese (zh)
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CN102870503A (zh
Inventor
科坦·马哈德斯瓦拉萨瓦米
卡洛·贝拉
拉瑞·D·艾利萨迦
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32908—Utilities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28D—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
    • F28D21/00—Heat-exchange apparatus not covered by any of the groups F28D1/00 - F28D20/00
    • F28D2021/0019—Other heat exchangers for particular applications; Heat exchange systems not otherwise provided for
    • F28D2021/0028—Other heat exchangers for particular applications; Heat exchange systems not otherwise provided for for cooling heat generating elements, e.g. for cooling electronic components or electric devices
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F7/00—Elements not covered by group F28F1/00, F28F3/00 or F28F5/00
    • F28F7/02—Blocks traversed by passages for heat-exchange media

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
CN201180021881.XA 2010-06-11 2011-06-03 具有区域依赖性热效率的温度受控等离子体处理腔室部件 Active CN102870503B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US35415810P 2010-06-11 2010-06-11
US61/354,158 2010-06-11
US13/111,384 2011-05-19
US13/111,384 US8608852B2 (en) 2010-06-11 2011-05-19 Temperature controlled plasma processing chamber component with zone dependent thermal efficiencies
PCT/US2011/039183 WO2011156240A2 (en) 2010-06-11 2011-06-03 Temperature controlled plasma processing chamber component with zone dependent thermal efficiencies

Publications (2)

Publication Number Publication Date
CN102870503A CN102870503A (zh) 2013-01-09
CN102870503B true CN102870503B (zh) 2016-02-24

Family

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CN201180021881.XA Active CN102870503B (zh) 2010-06-11 2011-06-03 具有区域依赖性热效率的温度受控等离子体处理腔室部件

Country Status (6)

Country Link
US (2) US8608852B2 (ja)
JP (1) JP6076246B2 (ja)
KR (2) KR101737474B1 (ja)
CN (1) CN102870503B (ja)
TW (2) TWI456638B (ja)
WO (1) WO2011156240A2 (ja)

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Also Published As

Publication number Publication date
KR20130020956A (ko) 2013-03-04
CN102870503A (zh) 2013-01-09
KR20140071508A (ko) 2014-06-11
TWI622089B (zh) 2018-04-21
WO2011156240A2 (en) 2011-12-15
US8608852B2 (en) 2013-12-17
JP2013535099A (ja) 2013-09-09
US20140083978A1 (en) 2014-03-27
TW201447995A (zh) 2014-12-16
KR101475424B1 (ko) 2014-12-22
TWI456638B (zh) 2014-10-11
WO2011156240A3 (en) 2012-01-26
KR101737474B1 (ko) 2017-05-18
US20110303641A1 (en) 2011-12-15
TW201230166A (en) 2012-07-16
JP6076246B2 (ja) 2017-02-08

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