WO2019236856A1

WO2019236856A1 - Temperature controlled susceptor for flat panel process equipment

Info

Publication number: WO2019236856A1
Application number: PCT/US2019/035807
Authority: WO
Inventors: Suhail Anwar; Jeevan Prakash SEQUEIRA
Original assignee: Applied Materials, Inc.
Priority date: 2018-06-08
Filing date: 2019-06-06
Publication date: 2019-12-12
Also published as: CN112352064A; TW202002153A; TWI722451B

Abstract

Embodiments described herein provide substrate support assemblies that improve the uniformity of deposited films or films to be etched. Each of the substrate support assemblies include one of unidirectional and bidirectional flow of fluid through a bottom plate of a substrate support such that excess heat is removed and/or heat is provided to the substrate support to maintain the predetermined support temperature. The predetermined support temperature is set to a temperature based on process parameters such that a uniform temperature distribution of a substrate is maintained independent of the intensity of the plasma during processing to result in a deposited film with improved uniformity of film thickness or etched film with improved uniformity.

Description

TEMPERATURE CONTROLLED SUSCEPTOR FOR

FLAT PANEL PROCESS EQUIPMENT

BACKGROUND

Field

[0001 ] Embodiments of the present disclosure generally relate to process chambers, such as plasma-enhanced chemical vapor deposition (PECVD) chambers. More particularly, embodiments of the present disclosure relate to substrate support assemblies for process chambers.

Description of the Related Art

[0002] Chemical vapor deposition (CVD) and plasma enhanced chemical vapor deposition (PECVD) are generally employed to deposit thin films on a substrate, such as a transparent substrate used for flat panel displays. CVD and PECVD are generally accomplished by introducing a precursor gas or gas mixture into a vacuum chamber that contains a substrate. The precursor gas or gas mixture is typically directed downwardly through a diffuser situated near the top of the chamber. The diffuser is placed above a substrate that is positioned on a heated substrate support at a small distance such that the diffuser and the precursor gas or gas mixture are heated by the radiated heat from the substrate support. The substrate support is heated to a predetermined temperature to heat the substrate to a desired temperature range. During PECVD the precursor gas or gas mixture in the chamber is energized (e.g., excited) into a plasma by applying radio frequency (RF) power to the chamber from one or more RF sources coupled to the chamber. The excited gas or gas mixture reacts to form a film of material on a surface of the substrate at a process temperature range. The substrate positioned on the heated substrate support. Volatile by-products produced during the reaction are pumped from the chamber through an exhaust system.

[0003] Flat panels processed by CVD and PECVD processing are typically large, often exceeding 370 mm*470 mm. Thus, substrate supports having resistive heating elements embedded therein are utilized to heat substrates relatively large in size, particularly as compared to substrate supports utilized for 200 mm and 300 mm semiconductor wafer processing, to a desired temperature range. However, as a result of the intensity of the plasma during processing, the temperature of a resistively heated substrate support increases and the temperature distribution of the resistive!y heated substrate support becomes non-uniform resulting in a temperature of the substrate outside of the desired temperature range and a non- uniform temperature distribution of the substrate. The temperature of the substrate outside of the desired temperature range and a non-uniform temperature distribution of the substrate result in a film deposited with a non-uniform thickness

[0004] Therefore, there is a need for improved substrate support assemblies that improve the uniformity of deposited films or films to be etched.

SUMMARY

[000S] In one embodiment, a support assembly is provided. The support assembly includes a bottom plate, a middle plate, and a top plate. The bottom plate includes a supply channel having a supply inlet configured to be coupleable with a fluid supply conduit of a heat exchanger, a return channel having a return outlet configured to be coupleable with a fluid return conduit of the heat exchanger, a pair of supply bypass channels fluidly coupled to the supply channel, a pair of return bypass channels fluidly coupled to the return channel, a plurality of coiled conduits, and a first portion of a gas passage disposed therethrough. Each of the coiled conduits includes a coiled channel inlet connected to one of the supply bypass channels, and a coiled channel outlet connected to one of the return bypass channels. The middle plate is disposed between the bottom plate and a top plate. The top plate includes a surface operable to support a substrate, a plurality of gas channels, each of the gas channels having pins exposed to the surface, and an ejector manifold coupled to each of the gas channels and coupled to a second portion of the gas passage disposed through the middle plate, the gas passage.

[0006] In another embodiment, a support assembly is provided. The support assembly includes a bottom plate and a top plate coupled to the bottom plate. The top plate has a surface operable to support a substrate. The bottom plate includes a supply channel having a supply inlet configured to be coupleable with a fluid supply conduit of a heat exchanger, a pair of return bypass channels fluidly coupled to the supply channel via conduit outlets of conduits having conduit inlets coupled to the supply channel, and a pair of return channels coupled to the return bypass channels. Each of the return channels has a return outlet configured to be coupleable with a fluid return conduit of the heat exchanger. [0007] In yet another embodiment, a chamber is provided. The chamber includes a diffuser plate having a plurality of gas passages disposed therethough, a radio frequency (RF) power source coupled to the diffuser plate, and a support assembly disposed opposite the diffuser plate. The support assembly includes a bottom plate, a middle plate, and a top plate. The bottom plate includes a supply channel having a supply inlet configured to be coupleable with a fluid supply conduit of a heat exchanger, a return channel having a return outlet configured to be coupleable with a fluid return conduit of the heat exchanger, a pair of supply bypass channels fluidly coupled to the supply channel, a pair of return bypass channels fluidly coupled to the return channel, a plurality of coiled conduits, and a first portion of a gas passage disposed therethrough. Each of the coiled conduits includes a coiled channel inlet connected to one of the supply bypass channels, and a coiled channel outlet connected to one of the return bypass channels. The middle plate is disposed between the bottom plate and a top plate. The top plate includes a surface operable to support a substrate, a plurality of gas channels, each of the gas channels having pins exposed to the surface, and an ejector manifold coupled to each of the gas channels and coupled to a second portion of the gas passage disposed through the middle plate, the gas passage.

BRIEF DESCRIPTION OF THE DRAWINGS

[0008] So that the manner in which the above recited features of the present disclosure can be understood in detail, a more particular description of the disclosure, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only exemplary embodiments and are therefore not to be considered limiting of its scope, and may admit to other equally effective embodiments.

[Q009] Figure 1 is a schematic cross-sectional view of one embodiment of a plasma enhanced chemical vapor deposition (PECVD) system according to an embodiment.

[0010] Figure 2A Is an exploded, top view and Figure 2B is an exploded, bottom view of a substrate support assembly according to an embodiment. [0011 ] Figure 2C is a negative, perspective view of a substrate support assembly according to an embodiment

[0012] Figures 2D and 2E are magnified, negative perspective views of a substrate support assembly according to an embodiment.

[0013] Figures 2F-2H are schematic, cross-sectional views of a substrate support assembly according to an embodiment.

[0014] Figure 3A is an exploded, top view of a substrate support assembly according to an embodiment.

[0015] Figure 3B is a negative, perspective view of a temperature control system of a substrate support assembly according to an embodiment.

[0016] To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation.

DETAILED DESCRIPTION

[0017] Embodiments described herein provide substrate support assemblies that improve the uniformity of deposited films or films to be etched. Each of the substrate support assemblies include one of unidirectional and bidirectional flow of fluid through a bottom plate of a substrate support such that excess heat is removed and/or heat is provided to the substrate support to maintain the predetermined support temperature. The predetermined support temperature is set to a temperature based on process parameters such that a uniform temperature distribution of a substrate is maintained independent of the intensity of the plasma during processing to result in a deposited film with improved uniformity of film thickness or etched film with improved uniformity.

[0018] Figure 1 is a schematic cross-sectional view of one embodiment of a plasma enhanced chemical vapor deposition (PECVD) chamber 100, available from Applied Materials, Inc. located in Santa Clara, Calif it is to be understood that the system described below is an exemplary chamber and other chambers, including chambers from other manufacturers, may be used with or modified to accomplish aspects of the present disclosure. The chamber 100 includes a chamber body 102, a substrate support assembly 104, and a gas distribution assembly 106. The gas distribution assembly 106 positioned opposite the substrate support assembly 104 and defining a process volume 108 therebetween.

[0019] The gas distribution assembly 106 is configured to distribute gases uniformly into the process volume 108 of the chamber 100 to facilitate deposition of a film onto, or etching of a film from, a substrate 1 10 positioned on a substrate support 1 12 of the substrate support assembly 104. The gas distribution assembly 106 includes a diffuser plate 105 suspended from a backing plate 103 A plurality of gas passages (not shown) are formed through the diffuser plate 105 to allow a uniform predetermined distribution of gas to pass through the gas distribution assembly 106 and into the process volume 108. The backing plate 103 maintains the diffuser plate 105 in a spaced-apart relation from a bottom surface 1 15 of the backing p!ate 103, thus defining a plenum 1 13 therebetween. The backing plate 103 includes a gas inlet passage 107 coupled to a manifold 109 coupieab!e to one or more gas sources 1 1 1 . The plenum 1 13 allows gas flowing through the gas inlet passage 107 to uniformly distribute across the width of the diffuser plate 105 so that gas flows with a uniform distribution through the gas passages of the diffuser plate 105.

[0020] In one embodiment, which can be combined with other embodiments described herein, a heat exchanger 1 17 is in fluid communication with a fluid channel (not shown) of the diffuser plate 105. The heat exchanger 1 17 is in fluid communication with a fluid channel via a fluid outlet conduit 1 19 and a fluid inlet conduit 123. The fluid outlet conduit 1 19 is connected to an inlet 121 of the diffuser fluid channel and the fluid inlet conduit 123 is connected to an outlet 125 of the fluid channel such that excess heat is removed and/or heat is provided to the diffuser plate 105 to maintain a predetermined diffuser temperature. The predetermined diffuser temperature can be set to a temperature based on process parameters. The fluid may include a material that can maintain a temperature of about 50 degrees Celsius to about 450 degrees Celsius.

[0021 ] The gas distribution assembly 106 is coupled to a radio frequency (RF) power source 127, which is used to generate the plasma for processing of the substrate 1 10. The substrate support assembly 104 is generally is grounded such that RF power is supplied by the RF power source 127 to the gas distribution assembly 106 to provide a capacitive coupling between the diffuser plate 105 and the substrate support 1 12. When RF power is supplied to the diffuser plate 105, an electric filed is generated between the diffuser plate 105 and substrate support 1 12 such that atoms of gases present in the process volume 108 between substrate support 1 12 and the diffuser plate 105 are ionized and release electrons.

[0022] The substrate support assembly 104 is at least partially disposed within the chamber body 102. The substrate support assembly 104 supports the substrate 1 10 during processing. The substrate support assembly 104 includes a substrate support 1 12. The substrate support 1 12 may be fabricated from aluminum (Al) or anodized A!. The substrate support 1 12 has a lower surface 1 14 for mounting a stem 1 18 and an upper surface 1 16 for supporting the substrate 1 10. The stem 1 18 has a passage 120 for conduits of the substrate support assembly 104. The stem 1 18 couples the substrate support assembly 104 to a lift system (not shown) that moves the substrate support assembly 104 between a processing position (as shown) and a transfer position that facilitates substrate transfer to and from the chamber 100 though a slit valve 129 of the chamber body 102.

[0023] The substrate support assembly 104 includes a temperature control system 142 (shown in Figures 2A-3B). In one embodiment, which can be combined with other embodiments described herein, the substrate support assembly 104 includes the substrate support assembly 104 Includes a temperature control system 142 and a liftoff system 144 (shown in Figures 2A-2H). The temperature control system 142 includes at least one fluid channel (shown in Figures 2A-3B) coupled to a heat exchanger 124. The heat exchanger 124 is connected to the least one fluid channel via a fluid supply conduit 126 connected to an inlet (shown in Figures 2A~ 3B) of the at least one fluid channel and via a fluid return conduit 128 connected to an outlet (shown in Figures 2A-3B) of the at least one fluid channel. The heat exchanger 124 circulates fluid though the substrate support assembly 104 such that excess heat is removed and/or heat is provided to the substrate support 1 12 to maintain a predetermined support temperature. The predetermined support temperature can be set to a temperature based on process parameters such that a uniform temperature distribution of the substrate 1 10 is maintained independent of the intensity of the plasma during processing to result in a deposited film with improved uniformity of film thickness or etched film with improved uniformity. The fluid may include a material that can maintain a temperature of about 50 degrees Celsius to about 450 degrees Celsius.

[0024] The liftoff system 144 includes a plurality of gas channels (shown in Figures 2A-2H) coupled to a manifold 130. Each of the gas channels includes pins (shown in Figures 2A-2H) exposed to the upper surface 1 16 of the substrate support 1 12. The manifold 130 is coupled to a liftoff gas delivery vessel 132. The liftoff gas delivery vessel 132 is capable of delivering liftoff gas to the manifold 130 and through a gas passage 140 to the plurality of gas channels. The liftoff system 144 further includes a vacuum pump 134 connected to the manifold 130. The vacuum pump 134 is capable of generating suction through manifold 130 and the gas passage 140 in fluid communication with the plurality of gas channels. Liftoff gas flowing through the plurality of pins provides for ejection the substrate 1 10 off the upper surface 1 16 of the substrate support 1 12. Generating suction through the plurality of pins provides for retention of the substrate 1 10 on the upper surface 1 16 of the substrate support 1 12

[0025] A controller 146 is coupled to the chamber 100 and configured to control aspects of the chamber 100 during processing. The controller 146 may include a central processing unit (CPU) (not shown), memory (not shown), and support circuits (or I/O) (not shown). The CPU may be one of any form of computer processors that are used in industrial settings for controlling various processes and hardware (e.g., motors and other hardware) and monitor the processes (e.g., flow rates of the fluid and liftoff gas). The memory (not shown) is connected to the CPU, and may be one or more of a readily available memory, such as random access memory (RAM), read only memory (ROM), floppy disk, hard disk, or any other form of digital storage, local or remote. Software instructions and data can be coded and stored within the memory for instructing the CPU. The support circuits (not shown) are also connected to the CPU for supporting the processor in a conventional manner. The support circuits may include conventional cache, power supplies, clock circuits, input/output circuitry, subsystems, and the like. A program (or computer instructions) readable by the controller 146 determines which tasks are performab!e by the chamber 100. The program may be software readable by the controller 146 and may include instructions to monitor and control, for example the predetermined support temperature, retention of the substrate 1 10, and liftoff of the substrate 1 10.

[0026] Figure 2A is an exploded, top view and Figure 2B is an exploded, bottom view of the substrate support assembly 104 including the temperature control system 142 and the liftoff system 144. Figure 2C is a negative, perspective view of the substrate support assembly 104. Figures 2D and 2E are magnified, negative perspective views of the substrate support assembly 104. Figures 2F-2H are schematic, cross-sectional views of the substrate support assembly 104. The substrate support assembly 104 includes a substrate support 1 12. The substrate support assembly 104 includes the substrate support 1 12 having a bottom plate 204, a middle plate 206, a top plate 208, and the stem 1 18. The top plate 208 includes the upper surface 1 16 and the bottom plate 204 includes the lower surface 1 14. In one embodiment, which can be combined with other embodiments described herein, the middle plate 206 is at least one of cast, brazed, forged, hot iso-statical ly pressed, and sintered to the bottom plate 204. In one embodiment, which can be combined with other embodiments described herein, the top plate 208 is at least one of cast, brazed, forged, hot iso-staticai!y pressed, and sintered to the bottom plate 204. The bottom plate 204 has a thickness 201 , the middle plate 206 has a thickness 203, and the top plate 208 has a thickness 205.

[0027] In one embodiment, as shown in Figure 2A, which can be combined with other embodiments described herein, the temperature control system 142 of the bottom plate 204 has a fluid channel 210 disposed therein. The fluid channel 210 is a single channel of a plurality of coiled conduits 212 in fluid communication with each other. Each of the plurality of coiled conduits 212 has one turn. A heat exchanger 124 is connected in fluid communication with the fluid channel 210 via the fluid supply conduit 126 connected to a supply inlet 214 of the fluid channel 210 and via a fluid return conduit 128 connected to a return outlet 216 of the fluid channel 210. in the embodiment of the fluid channel 210, one coiled conduit of the plurality of coi!ed conduits 212 has the supply inlet 214 and the return outlet 216. The heat exchanger 124 circulates fluid though the fluid channel 210 in a unidirectional flow such that excess heat is removed and/or heat is provided to the substrate support 1 12 to maintain the predetermined support temperature. The predetermined temperature can be set to a temperature based on process parameters such that a uniform temperature distribution of a substrate is maintained independent of the intensity of the plasma during processing to result in a deposited film with improved uniformity of film thickness or etched film with improved uniformity. In one embodiment, which can be combined with other embodiments described herein, the temperature control system 142 includes a plurality of thermocouples 218 coupled to the controller 146 to determine the temperature of the substrate support 1 12. The controller 146 coupled to the thermocouples 218 and the heat exchanger 124 is operable to monitor and control the circulation and temperature of the fluid entering the fluid channel 210.

[0028] The bottom plate 204 further includes a first portion of the gas passage 140 that aligns with a second portion of the gas passage 140 of the middle plate 206. The middle plate 206 isolates the bottom plate 204 and the top plate 208. The liftoff system 144 includes the plurality of gas channels 220 disposed in the top plate 208. Each of the plurality of gas channels 220 includes pins 222 exposed to the upper surface 1 16 of the substrate support 1 12. Each of the plurality of gas channels 220 is fluidly coupled to an ejector manifold 224 In fluid communication with the gas passage 140 coupled to the manifold 130. The manifold 130 is coupled to a liftoff gas delivery vessel 132 is capable of delivering liftoff gas via the to the manifold 130 and through the gas passage 140 to the ejector manifold 224 and through the plurality of gas channels 220 and pins 222 exposed to the upper surface 1 16 of the substrate support 1 12. The vacuum pump 134 is capable of generating suction through the gas passage 140 to the ejector manifold 224 and through the plurality of gas channels 220 and pins 222 exposed to the upper surface 1 16 of the substrate support 1 12. Liftoff gas fl owing through the plurality of pins 222 provides for ejection the substrate 1 10 off the upper surface 1 16 of the substrate support 1 12. Generating suction through the plurality of pins 222 provides for retention of the substrate 1 10 on the upper surface 1 16 of the substrate support 1 12. In one embodiment, which can be combined with other embodiments described herein, the top plate 208 includes a seal 229, such as an o-ring, to maintain the pressure in the process volume 108 of the chamber 100.

[0029] In one embodiment, as shown in Figures 2C-2H, which can be combined with other embodiments described herein, the temperature control system 142 of the bottom plate 204 has a fluid channel assembly 226 disposed therein. The fluid channel assembly 226 includes a supply channel 228 having the supply inlet 214 The supply channel 228 is fluidly coupled to a pair of supply bypass channels 230 The fluid channel assembly 226 includes a return channel 232 having the return outlet 216. The return channel 232 is fluidly coupled to a pair of return bypass channels 234. Each coiled conduit of the plurality of coiled conduits 212 has a coiled channel inlet 236 connected to one of the supply bypass channels 230 and a coiled channel outlet 238 connected to one of the return bypass channels 234. The heat exchanger 124 circulates fluid though fluid supply conduit 126, to the supply channel 228, to the supply bypass channels 230, through the plurality of coiled conduits 212, to the return bypass channels 234, to the return channel 232, and to the heat exchanger 124 through the fluid return conduit 128. The heat exchanger 124 circulates fluid though the fluid channel assembly 226 in a bidirectional flow such that excess heat is removed and/or heat is provided to the substrate support 1 12 to maintain the predetermined support temperature. In one embodiment, which can be combined with other embodiments described herein, the temperature control system 142 includes the plurality of thermocouples 218 coupled to the controller 146 to determine the temperature of the substrate support 1 12. The controller 146 coupled to the thermocouples 218 and the heat exchanger 124 is operable to monitor and control the circulation and temperature of the fluid entering the fluid channel assembly 226.

[0030] Figure 3A is an exploded, top view of the substrate support assembly 104 including the temperature control system 142. Figure 3B is a negative, perspective view of the temperature control system 142 of substrate support assembly 104. The substrate support assembly 104 includes the substrate support 1 12 having a bottom plate 304 and a top plate 308, and the stem 1 18. The top plate 308 includes the upper surface 1 16 and the bottom plate 304 includes the lower surface 1 14. In one embodiment, which can be combined with other embodiments described herein, the top plate 308 is at least one of cast, brazed, forged, hot iso-statica!ly pressed, and sintered to the bottom plate 304. The bottom plate 304 has a thickness 301 and the top plate 308 has a thickness 305.

[0031 ] In one embodiment, as shown in Figure 2A, which can be combined with other embodiments described herein, the temperature control system 142 of the bottom plate 3Q4 has the fluid channel 210 disposed therein. The fluid channel 210 is the single channel of a plurality of coiled conduits 212 in fluid communication with each other. Each of the plurality of coiled conduits 212 has one turn. The heat exchanger 124 is connected in fluid communication with the fluid channel 210 via the fluid supply conduit 126 connected to the supply inlet 214 of the fluid channel 210 and via the fluid return conduit 128 connected to an return outlet 216 of the fluid channel 210. In the embodiment of the fluid channel 210, one coiled conduit of the plurality of coiled conduits 212 has the supply inlet 214 and the return outlet 216. The heat exchanger 124 circulates fluid though the fluid channel 210 in a unidirectional flow such that excess heat is removed and/or heat is provided to the substrate support 1 12 to maintain the predetermined support temperature. The predetermined temperature can be set to a temperature based on process parameters such that a uniform temperature distribution of a substrate is maintained independent of the intensity of the plasma during processing to result in a deposited film with improved uniformity of film thickness or etched film with improved uniformity.

[0032] In another embodiment, as shown in Figures 3A-3B, which can be combined with other embodiments described herein, the temperature control system 142 of the bottom plate 304 has a fluid channel assembly 326 disposed therein. The fluid channel assembly 326 includes a supply channel 328 having the supply inlet 214. The supply channel 328 is fluidly coupled to a pair of return bypass channels 334 via conduit outlets 338 of conduits 312 having conduit inlets 336 coupled to the supply channel 328. Each of the return bypass channels 334 are coupled to a return channel 332 having the return outlet 216

[0033] The heat exchanger 124 circulates fluid though fluid supply conduit 126, to the supply channel 328, through the plurality of conduits 312, to the return bypass channels 334, to the return channel 332, and to the heat exchanger 124 through the fluid return conduit 128. The heat exchanger 124 circulates fluid though the fluid channel assembly 326 in a bidirectional flow such that excess heat is removed and/or heat is provided to the substrate support 1 12 to maintain the predetermined support temperature. In one embodiment, which can be combined with other embodiments described herein, the temperature control system 142 includes the plurality of thermocouples 218 coupled to the controller 146 to determine the temperature of the substrate support 1 12. The controller 146 coupled to the thermocouples 218 and the heat exchanger 124 is operable to monitor and control the circulation and temperature of the fluid entering the fluid channel assembly 228.

[0034] In summation, substrate support assemblies that improve the uniformity of deposited films or films to be etched are described herein. Each of the substrate support assemblies include one of unidirectional and bidirectional flow of fluid through a bottom plate of a substrate support such that excess heat is removed and/or heat is provided to the substrate support to maintain the predetermined support temperature. The predetermined support temperature is set to a temperature based on process parameters such that a uniform temperature distribution of a substrate is maintained independent of the intensity of the plasma during processing to result in a deposited film with improved uniformity of film thickness or etched film with improved uniformity.

[0G3S] While the foregoing is directed to examples of the present disclosure, other and further examples of the disclosure may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.

Claims

What Is claimed Is:

1. A support assembly, comprising:

a bottom plate, the bottom plate comprises:

a supply channel having a supply Inlet configured to be coupieable with a fluid supply conduit of a heat exchanger;

a return channel having a return outlet configured to be coupieable with a fluid return conduit of the heat exchanger;

a pair of supply bypass channels fluidly coupled to the supply channel; a pair of return bypass channels fluidly coupled to the return channel; a plurality of coiled conduits, each of the coiled conduits comprises: a coiled channel inlet connected to one of the supply bypass channels; and

a coiled channel outlet connected to one of the return bypass channels; and

a first portion of a gas passage disposed therethrough; and a middle plate disposed between the bottom plate and a top plate, the top plate comprises:

a surface operable to support a substrate:

a plurality of gas channels, each of the gas channels having pins exposed to the surface; and

an ejector manifold coupled to each of the gas channels and coupled to a second portion of the gas passage disposed through the middle plate, the gas passage.

2. The assembly of claim 1 , wherein the heat exchanger when coupled with the supply channel and the return channel is operable to circulate fluid from the fluid supply conduit through the supply channel, the supply bypass channels, the plurality of coiled conduits, the return bypass channels, the return channel, and to the heat exchanger though the fluid return conduit.

3. The assembly of claim 2, wherein a controller coupled to the heat exchanger is operable to control the circulation of the fluid to maintain a predetermined support temperature.

4. The assembly of claim 3, wherein thermocouples disposed in the bottom plate are coupled to the controller.

5. The assembly of claim 1 , wherein the middle plate is at least one of casted, brazed, forged, hot iso-staticaliy pressed, and sintered to the bottom plate.

6. The assembly of claim 1 , wherein the top plate is at least one of casted, brazed, forged, hot iso-staticaliy pressed, and sintered to the middle plate.

7. The assembly of claim 1 , wherein the middle plate isolates the bottom plate from the top plate

8. The assembly of claim 1 , wherein the gas passage is coupled to a manifold, and wherein:

a liftoff gas delivery vessel coupled to the manifold is operable to deliver liftoff gas to through the gas passage, the ejector manifold, the plurality of gas channels, and the pins to eject a substrate from the surface of the top plate; and

a vacuum pump coupled to the manifold is operable to generate suction through the gas passage, the ejector manifold, the plurality of gas channels, and the pins to retain a substrate on the surface of the top plate.

9. The assembly of claim 1 , wherein the support assembly is disposable in a processing chamber opposite a diffuser plate disposed in the chamber.

10. A support assembly, comprising:

a bottom plate, the bottom plate comprises:

a supply channel having a supply inlet configured to be coupleable with a fluid supply conduit of a heat exchanger;

a pair of return bypass channels fluidly coupled to the supply channel via conduit outlets of conduits having conduit inlets coupled to the supply channel; and

a pair of return channels coupled to the return bypass channels, wherein each of the return channels has a return outlet configured to be coupleable with a fluid return conduit of the heat exchanger; and a top plate coupled to the bottom plate, the top plate having a surface operable to support a substrate

1 1 . The assembly of claim 10, wherein the heat exchanger when coupled with the supply channel and the return channels is operable to circulate fluid from fluid supply conduit through the supply channel, the conduits, the return bypass channels, the return channels, and through the heat exchanger to the fluid return conduit.

12. The assembly of claim 1 1 , wherein a controller coupled to the heat exchanger is operable to control the circulation of the fluid to maintain a predetermined support temperature.

13. The assembly of claim 12, wherein thermocouples disposed in the bottom plate are coupled to the controller.

14. The assembly of claim 10, wherein the top plate is at least one of casted, brazed, forged, hot iso-statically pressed, and sintered to the bottom plate.

15. A chamber, comprising;

a diffuser plate having a plurality of gas passages disposed therethough; a radio frequency (RF) power source coupled to the diffuser plate;

a support assembly disposed opposite the diffuser plate, the support assembly comprising:

a bottom plate, the bottom plate comprises:

a supply channel having a supply inlet configured to be coupieabie with a fluid supply conduit of a heat exchanger;

a return channel having a return outlet configured to be coupieabie with a fluid return conduit of the heat exchanger; a pair of supply bypass channels fluidly coupled to the supply channel;

a pair of return bypass channels fluidly coupled to the return channel;

a plurality of coiled conduits, each of the coiled conduits comprises: a coiled channel inlet connected to one of the supply bypass channels;

a coiled channel outlet connected to one of the return bypass channels; and

a surface operable to support a substrate;