TW202002153A - Support assembly and chamber using the same - Google Patents

Abstract

Embodiments described herein provide substrate support assemblies that improve the uniformity of deposited films or films to be etched. Each of the substrate support assemblies include one of unidirectional and bidirectional flow of fluid through a bottom plate of a substrate support such that excess heat is removed and/or heat is provided to the substrate support to maintain the predetermined support temperature. The predetermined support temperature is set to a temperature based on process parameters such that a uniform temperature distribution of a substrate is maintained independent of the intensity of the plasma during processing to result in a deposited film with improved uniformity of film thickness or etched film with improved uniformity.

Description

Temperature control base for flat panel processing equipment

The embodiment of the present disclosure relates to a processing chamber, for example, a plasma-enhanced chemical vapor deposition (PECVD) chamber. More specifically, the embodiments of the present disclosure relate to substrate support assemblies used in processing chambers.

Chemical vapor deposition (CVD) and plasma enhanced chemical vapor deposition are commonly used to deposit thin films on substrates, such as transparent substrates for flat panel displays. Chemical vapor deposition and plasma enhanced chemical vapor deposition are generally accomplished by introducing a precursor gas or gas mixture into a vacuum chamber containing a substrate. The precursor gas or gas mixture is usually directed downward and passes through a diffuser located near the top of the chamber. The diffuser is placed above the substrate, and the substrate is located a short distance above the heated substrate support, so that the diffuser and the precursor gas or gas mixture can be heated by the radiant heat from the substrate support. The substrate support is heated to a predetermined temperature to heat the substrate to the desired temperature range. During plasma-enhanced chemical vapor deposition, RF power is applied to the chamber from one or more RF sources coupled to the chamber to energize the precursor gas or gas mixture in the chamber ( For example, excitation) to form plasma. Within a range of processing temperatures, the excited precursor gas or gas mixture will react to form a material film on the surface of the substrate. The substrate is located on the heated substrate support, and the volatile by-products (by-products) generated during the reaction pass through the exhaust system to be extracted from the chamber.

470毫米。因此，特別是與200毫米與300毫米的半導體晶圓製程所使用的基板支撐件相比，是運用內嵌電阻加熱元件（resistive heating elements）的基板支撐件而將尺寸相對較大的基板加熱至所需的溫度範圍中。然而，在處理期間由於電漿的強度，電阻式加熱的基板支撐件的溫度會上升，且電阻式加熱的基板支撐件的溫度分佈變得不均勻，導致基板的溫度超出所需的溫度範圍外以及基板的不均勻溫度分佈，而造成沉積的膜層具有不一致的厚度。Flat plates processed by chemical vapor deposition and plasma enhanced chemical vapor deposition processes are generally relatively large, usually exceeding 370 mm

470 mm. Therefore, especially in comparison with the substrate supports used in the 200 mm and 300 mm semiconductor wafer processes, the substrate supports with embedded resistive heating elements are used to heat the relatively large substrate to In the desired temperature range. However, due to the strength of the plasma during processing, the temperature of the resistance-heated substrate support rises, and the temperature distribution of the resistance-heated substrate support becomes uneven, causing the temperature of the substrate to exceed the required temperature range As well as the uneven temperature distribution of the substrate, the deposited film layer has an inconsistent thickness.

Therefore, there is a need to improve the substrate support assembly to improve the consistency of the deposited film or the film to be etched.

In an embodiment, a support assembly is proposed. The supporting assembly includes a bottom plate, an intermediate plate and a top plate. The bottom plate includes a supply channel (supply channel), a supply inlet configured to be coupled with a fluid supply conduit of a heat exchanger (fluid supply conduit); a return channel (return channel), configured and A fluid return conduit of the heat exchanger can be coupled to a return outlet; a pair of supply bypass channels fluidly coupled to the supply pipe; a pair of supply bypass channels fluidly coupled to the return pipe Return bypass channel; multiple coiled conduits; and the first part of the gas passage provided through the bottom plate. Each winding duct includes a winding pipe inlet connected to one of the supply shunt pipes, and a winding pipe outlet connected to one of the return shunt pipes. The middle plate is arranged between the bottom plate and the top plate. The top plate includes a surface operable to support the substrate; a plurality of gas channels, each with a pin exposed on the surface; and an ejector manifold, coupled to each A gas pipe and a second part coupled to the gas channel provided through the intermediate plate.

In another embodiment, a support assembly is proposed. The support assembly includes a bottom plate, and a top plate coupled to the bottom plate. The top plate includes a surface operable to support the substrate. The bottom plate includes a supply pipe having a supply inlet configured to be coupled with a fluid supply duct of the heat exchanger; a pair of return flow diversion pipes fluidly coupled to the supply duct through the duct outlet of the duct, wherein the duct has a coupling to the supply duct A duct inlet; and a pair of return pipes coupled to the return branch pipes. Each return pipe has a return outlet configured to be coupled to the fluid return conduit of the heat exchanger.

In yet another embodiment, a chamber is proposed. The chamber includes a diffuser plate having a plurality of gas channels disposed therethrough; an RF power source coupled to the diffuser plate; and a support assembly provided relative to the diffuser plate. The supporting assembly includes a bottom plate, an intermediate plate and a top plate. The bottom plate includes a supply pipe with a supply inlet configured to be coupled to the fluid supply duct of the heat exchanger; a return pipe with a return outlet configured to be coupled to the fluid return duct of the heat exchanger; a fluid coupled to the supply duct A pair of supply shunt pipes; a pair of return shunt pipes fluidly coupled to the return pipe; a plurality of winding ducts; and a first part of the gas channel provided through the bottom plate. Each winding duct includes a winding pipe inlet connected to one of the supply shunt pipes, and a winding pipe outlet connected to one of the return shunt pipes. The middle plate is arranged between the bottom plate and the top plate. The top plate includes a surface operable to support the substrate; a plurality of gas pipes, each gas pipe having a latch exposed on the surface; and an injector manifold, coupled to each gas pipe and coupled to be disposed through the middle plate The second part of the gas channel.

The embodiments described herein propose a substrate support assembly that can improve the consistency of the deposited film, or the film to be etched. Each substrate support assembly includes one of a single-flow fluid and a dual-flow fluid, flowing through the bottom plate of the substrate support so that excess heat can be removed, and/or providing heat to the substrate support to maintain a predetermined support temperature. The predetermined temperature of the support is a temperature set based on the process parameters, so that during the process, the uniform temperature distribution of the substrate can be maintained independent of the strength of the plasma, resulting in the deposited film having an improved film thickness consistency, or It is the etched film layer with improved consistency.

FIG. 1 is a cross-sectional view of an example of a plasma enhanced chemical vapor deposition (PECVD) chamber 100, which can be taken from Applied Materials Co., Ltd. located in Santa Clara (California). It should be understood that the system described below is an exemplary chamber, and other chambers from other manufacturers may also be used or modified to achieve the level of the present disclosure. The chamber 100 includes a chamber body 102, a substrate support assembly 104, and a gas distribution assembly 106. The gas distribution assembly 106 is disposed relative to the substrate support assembly 104 and defines a processing space 108 between the two.

The gas distribution component 106 is configured to distribute gas uniformly to the processing space 108 in the chamber 100, so as to deposit or etch a film layer on the substrate 110, and the substrate 110 is provided on the substrate support On the substrate support 112 of the assembly 104. The gas distribution assembly 106 includes a diffusion plate 105 suspended from the back plate 103. A plurality of gas channels (not shown) are formed through the diffusion plate 105 so that a predetermined uniform gas distribution can enter the processing space 108 through the gas distribution assembly 106. The back plate 103 maintains the diffusion plate 105 in a spaced relationship with the bottom surface 115 of the back plate 103, and thus defines an air chamber 113 between the two. The backplate 103 includes a gas inlet channel 107 coupled to the manifold 109, and can be coupled to one or more gas sources 111. The gas chamber 113 enables gas to flow through the gas inlet channel 107 to be evenly distributed across the width of the diffusion plate 105, so that a gas flow having a uniform distribution can flow through the gas channel of the diffusion plate 105.

In an embodiment that can be combined with other embodiments herein, the heat exchanger 117 is in fluid communication with the gas duct (not shown) of the diffuser plate 105. The heat exchanger 117 is in fluid communication with the gas pipeline through the fluid outlet duct 119 and the fluid inlet duct 123. The fluid outlet duct 119 is connected to the inlet 121 of the diffuser fluid pipe, and the fluid inlet duct 123 is connected to the outlet 125 of the fluid pipe, so that excess heat can be removed, and/or heat is provided to the diffuser plate 105 to maintain a Predetermined diffuser temperature. The predetermined diffuser temperature can be set based on the parameters of the process. The fluid may include materials that maintain the temperature at about 50 degrees Celsius to about 450 degrees Celsius.

The gas distribution component 106 is coupled to a radio frequency (RF) power supply 127, and the radio frequency power supply 127 is used to generate plasma for processing the substrate 110. The substrate support assembly 104 is generally grounded so that RF power is supplied from the RF power supply 127 to the gas distribution assembly 106 to provide capacitive coupling between the diffusion plate 105 and the substrate support 112. When RF power is supplied to the diffusion plate 105, an electric field is generated between the diffusion plate 105 and the substrate support 112, so that the gas atoms existing in the processing space 108 between the substrate support 112 and the diffusion plate 105 are freed Emit electrons.

The substrate support assembly 104 is at least partially disposed within the chamber body 102. During the manufacturing process, the substrate support assembly 104 supports the substrate 110. The substrate support assembly 104 includes a substrate support 112. The substrate support 112 may be made of aluminum (Al) or anodized aluminum. The substrate support 112 has a lower surface 114 for mounting the stem 118 and an upper surface 116 for supporting the substrate 110. The backbone 118 has channels 120 for the conduits of the substrate support assembly 104. The backbone 118 couples the substrate support assembly 104 to a lifting system (not shown), which can move the substrate support assembly 104 between the processing position (as shown) and the transfer position to facilitate the substrate from the chamber body 102 A slit valve 129 is transferred into and out of the chamber 100.

The substrate support assembly 104 includes a temperature control system 142 (as shown in FIGS. 2A to 3B). In an embodiment that can be combined with other embodiments herein, the substrate support assembly 104 includes a temperature control system 142 and a liftoff system (144 as shown in FIGS. 2A to 2H). The temperature control system 142 includes at least one fluid pipe coupled to the heat exchanger 124 (as shown in FIGS. 2A to 3B). The heat exchanger 124 is through a fluid supply conduit 126 connected to the inlet of at least one fluid pipe (as shown in FIGS. 2A to 3B) and through the outlet connected to at least one fluid pipe (as shown in FIGS. 2A to 3B) 3B), the fluid return conduit 128 is connected to the at least one fluid pipe. The heat exchanger 124 circulates fluid through the substrate support assembly 104 so that excess heat can be removed and/or provides heat to the substrate support 112 to maintain a predetermined support temperature. The predetermined temperature of the support can be set based on the parameters of the process, so that the uniform temperature distribution of the substrate 110 during the process can be maintained independent of the strength of the plasma, resulting in the deposited film having improved film thickness consistency, or The etched film layer has improved consistency. The fluid may include materials that maintain the temperature at about 50 degrees Celsius to about 450 degrees Celsius.

The lift-off system 144 includes a plurality of gas pipes coupled to the branch pipe 130 (as shown in FIGS. 2A to 2H). Each gas pipe includes a latch exposed to the upper surface 116 of the substrate support 112 (as shown in FIGS. 2A to 2H). The branch pipe 130 is coupled to the lift air delivery tank 132. The lifting gas delivery tank 132 can transport the lifting gas to the branch pipe 130 and enter the plurality of gas pipes through the gas passage 140. The lift-off system 144 further includes a vacuum pump 134 connected to the manifold 130. The vacuum pump 134 can generate suction through the manifold 130 and the gas channel 140 in fluid communication with the plurality of gas pipes. The lifted air flowing through the plurality of pins allows the substrate 110 to be pushed away from the upper surface 116 of the substrate support 112. The suction force generated by the plurality of pins allows the substrate 110 to be held on the upper surface 116 of the substrate support 112.

The controller 146 is coupled to the chamber 100 and is configured to control many levels of the chamber 100 during processing. The controller 146 may include a central processing unit (CPU) (not shown), a memory (not shown), an auxiliary circuit (or input/output unit I/O) (not shown). The central processor can be one of any form of computer processors that are used in industrial settings to control various processes and hardware (for example, motors or other hardware) and monitor processes (For example, the flow rate of fluid and lifted air). The memory (not shown) is connected to the central processing unit and can be one or more readily available memory (readily available memory), such as random access memory (random access memory, RAM), read-only memory (read only memory, ROM), floppy disk, hard disk, or any other form of digital storage device (local or remote). Software commands and data can be encoded and stored in memory to command the central processor. The auxiliary circuit is also connected to the central processor and used for the auxiliary processor in a conventional manner. Auxiliary circuits may include conventional caches, power supplies, clock circuits, input/output circuits, subsystems, and the like. The program (or computer instruction) readable by the controller 146 determines the operation program that the chamber 100 can execute. This program may be software readable by the controller 146, and may include instructions to monitor and control, for example, predetermined support member temperature, holding of the substrate 110, and lift-off of the substrate 110.

FIG. 2A is a top expanded view of the substrate support assembly 104, and FIG. 2B is a bottom expanded view of the substrate support assembly. The substrate support assembly 104 includes a temperature control system 142 and a lift-off system 144. FIG. 2C is a negative perspective view of the substrate support assembly 104. FIGS. 2D and 2E are enlarged perspective views of the substrate support assembly 104 in negative numbers. 2F to 2H are cross-sectional views of the substrate support assembly 104. The substrate support assembly 104 includes a substrate support 112. The substrate support assembly 104 includes a substrate support 112 having a bottom plate 204, an intermediate plate 206, a top plate 208, and a backbone 118. The top plate 208 includes an upper surface 116 and the bottom plate 204 includes a lower surface 114. In an embodiment that can be combined with other embodiments herein, the intermediate plate 206 is at least cast, braze, forge, hot iso-statically pressed, and sintered ) To one of the bottom plates 204. In an embodiment that can be combined with other embodiments herein, the top plate 208 is at least one of casting, welding, forging, hot isostatic pressing, and sintering to the bottom plate 204. The bottom plate 204 has a thickness 201, the middle plate has a thickness 203, and the top plate 208 has a thickness 205.

As shown in FIG. 2A, in an embodiment that can be combined with other embodiments herein, the temperature control system 142 of the bottom plate 204 has a fluid conduit 210 disposed therein. The fluid duct 210 is a single duct of a plurality of winding ducts 212 in fluid communication with each other. Each of the plurality of winding ducts 212 has a turning point. The heat exchanger 124 is in fluid communication with the fluid conduit 210 through a fluid supply conduit 126 connected to the supply inlet 214 of the fluid conduit 210 and through a fluid return conduit 128 connected to the return outlet 216 of the fluid conduit 210. In the embodiment of the fluid pipe 210, one of the plurality of winding ducts 212 has a supply inlet 214 and a return outlet 216. The heat exchanger 124 circulates fluid in a single flow direction through the fluid pipe 210 so that excess heat can be removed, and/or heat is provided to the substrate support 112 to maintain a predetermined support temperature. The predetermined support temperature may be a temperature set based on process parameters, so that the uniform temperature distribution of the substrate during the process can be maintained independent of the strength of the plasma, resulting in an improved film thickness consistency of the deposited film, or It is the etched film layer with improved consistency. In an embodiment that can be combined with other embodiments herein, the temperature control system includes a plurality of thermocouples 218 coupled to the controller 146 to determine the temperature of the substrate support 112. A controller 146 coupled to the thermocouple 218 and the heat exchanger 124 is operable to monitor and control the fluid circulation and fluid temperature entering the fluid pipe 210.

The bottom plate 204 further includes a first portion of the gas channel 140 aligned with the second portion of the gas channel 140 located in the middle plate 206. The middle plate 206 separates the bottom plate 204 from the top plate 208. The lift-off system 144 includes a plurality of gas pipes 220 provided in the top plate 208. Each of the plurality of gas pipes 220 includes a latch 222 exposed to the upper surface 116 of the substrate support 112. Each of the plurality of gas pipes 220 is fluidly coupled to the injector manifold 224, and the injector manifold 224 is in fluid communication with the gas channel 140 coupled to the manifold 130. The branch pipe 130 is coupled to the lift air delivery tank 132, which can transport the lift air to the branch pipe 130, enter the injector branch pipe 224 through the gas passage 140, and pass through a plurality of gas pipes 220 and The latch 222 exposed to the upper surface 116 of the substrate support 112. The vacuum pump 134 can pass through the gas channel 140 to the injector manifold 224 and generate suction through the plurality of gas pipes 220 and the latch 222 exposed on the upper surface 116 of the substrate support 112. Elevated air flowing through the plurality of pins 222 enables the substrate 110 to be pushed away from the upper surface 116 of the substrate support 112. The suction force generated by the plurality of pins allows the substrate 110 to be held on the upper surface 116 of the substrate support 112. In an embodiment that can be combined with other embodiments herein, the top plate 208 includes a seal 229 (eg, an O-ring) to maintain the pressure within the processing space 108 of the chamber 100.

In an embodiment that can be combined with other embodiments herein (as shown in FIGS. 2C to 2H), the temperature control system 142 of the bottom plate 204 has a fluid piping assembly 226 disposed therein. The fluid pipe assembly 226 includes a supply pipe 228 having a supply inlet 214. The supply pipe 228 is fluidly coupled to the pair of supply branch pipes 230. The fluid pipe assembly 226 includes a return pipe 232 having a return outlet 216. The return pipe 232 is fluidly coupled to a pair of return branch pipes 234. Each of the plurality of winding ducts 212 has a winding duct inlet 236 connected to one of the supply branch pipes 230 and a winding duct outlet 238 connected to one of the return branch pipes 234. The heat exchanger 124 passes through the fluid supply duct 126 to the supply pipe 228 and then enters the supply branch pipe 230, passes through the plurality of winding ducts 212 to the return branch pipe 234 and then enters the return pipe 232, and returns to the heat exchanger 124 through the fluid return pipe 128 Instead, the fluid is circulated. The heat exchanger 124 circulates fluid in a bidirectional flow direction through the fluid piping assembly 226 so that excess heat can be removed, and/or heat is provided to the substrate support 112 to maintain a predetermined support temperature. In an embodiment that can be combined with other embodiments herein, the temperature control system 142 includes a plurality of thermocouples 218 coupled to the controller 146 to determine the temperature of the substrate support 112. A controller 146 coupled to the thermocouple 218 and the heat exchanger 124 is operable to monitor and control the fluid circulation and fluid temperature entering the fluid piping assembly 226.

FIG. 3A is a top expanded view of the substrate support assembly 104 including the temperature control system 142. FIG. 3B is a negative perspective view of the temperature control system 142 of the substrate support assembly 104. The substrate support assembly 104 includes a substrate support 112 having a bottom plate 304, a top plate 308, and a trunk 118. The top plate 308 includes an upper surface 116 and the bottom plate 304 includes a lower surface 114. In an embodiment that can be combined with other embodiments herein, the top plate 308 is at least one of casting, welding, forging, hot isostatic pressing, and sintering to the bottom plate 304. The bottom plate 304 has a thickness 301 and the top plate 308 has a thickness 305.

As shown in FIG. 2A, in an embodiment that can be combined with other embodiments herein, the temperature control system 142 of the bottom plate 304 has a fluid conduit 210 disposed therein. The fluid pipe 210 is a single pipe of a plurality of winding ducts 212 in fluid communication with each other. Each of the plurality of winding ducts 212 has a turning point. The heat exchanger 124 is in fluid communication with the fluid conduit 210 through a fluid supply conduit 126 connected to the supply inlet 214 of the fluid conduit 210 and through a fluid return conduit 128 connected to the return outlet 216 of the fluid conduit 210. In the embodiment of the fluid pipe 210, one of the plurality of winding ducts 212 has a supply inlet 214 and a return outlet 216. The heat exchanger 124 circulates fluid in a single flow direction through the fluid pipe 210 so that excess heat can be removed and/or heat is provided to the substrate support 112 to maintain a predetermined support temperature. The predetermined support temperature may be a temperature set based on process parameters, so that the uniform temperature distribution of the substrate during the process can be maintained independent of the strength of the plasma, resulting in an improved film thickness consistency of the deposited film, or It is the etched film layer with improved consistency.

As shown in FIGS. 3A to 3B, in another embodiment that can be combined with other embodiments herein, the temperature control system 142 of the bottom plate 304 has a fluid piping assembly 326 disposed therein. The fluid pipe assembly 326 includes a supply pipe 328 having a supply inlet 214. The supply duct 328 is fluidly coupled to a pair of return flow splitting ducts 334 through the duct outlet 338 of the duct 312, and the duct 312 has a duct inlet 336 coupled to the supply duct 328. Each return shunt pipe 334 is coupled to a return pipe 332 having a return outlet 216.

The heat exchanger 124 passes through the fluid supply duct 126 to the supply pipe 328, passes through the plurality of ducts 312 to the return branch pipe 334, and then enters the return pipe 332, and returns to the heat exchanger 124 through the fluid return pipe 128 to circulate the fluid. The heat exchanger 124 circulates fluid in a bidirectional flow direction through the fluid piping assembly 326 so that excess heat can be removed and/or heat is provided to the substrate support 112 to maintain a predetermined support temperature. In an embodiment that can be combined with other embodiments herein, the temperature control system 142 includes a plurality of thermocouples 218 coupled to the controller 146 to determine the temperature of the substrate support 112. A controller 146 coupled to the thermocouple 218 and the heat exchanger 124 is operable to monitor and control the fluid circulation and fluid temperature entering the fluid piping assembly 326.

In summary, the description herein describes a substrate support assembly that can improve the consistency of the deposited film or the film to be etched. Each substrate support assembly includes one of a single-flow fluid and a dual-flow fluid. Excess heat can be removed through the bottom plate of the substrate support and/or heat can be provided to the substrate support to maintain a predetermined support temperature. The predetermined support temperature may be a temperature set based on process parameters, so that the uniform temperature distribution of the substrate during the process can be maintained independent of the strength of the plasma, resulting in an improved film thickness consistency of the deposited film, or It is the etched film layer with improved consistency.

Although the foregoing is an example for this disclosure, other and further examples of this disclosure can be designed without departing from the basic scope of this disclosure, and the scope of this disclosure is determined by the scope of the following patent applications.

100‧‧‧ chamber 102‧‧‧chamber body 103‧‧‧Backboard 104‧‧‧Substrate support assembly 105‧‧‧Diffusion plate 106‧‧‧Gas distribution module 107‧‧‧Gas inlet channel 108‧‧‧ processing space 109、130‧‧‧Different tube 110‧‧‧ substrate 111‧‧‧Gas source 112‧‧‧Substrate support 113‧‧‧Air chamber 114‧‧‧Lower surface 115‧‧‧Bottom surface 116‧‧‧Upper surface 117, 124‧‧‧ heat exchanger 118‧‧‧ backbone 119‧‧‧ fluid outlet conduit 120‧‧‧channel 121‧‧‧ Entrance 123‧‧‧ fluid inlet conduit 125‧‧‧Export 126‧‧‧ fluid supply conduit 127‧‧‧RF power supply 128‧‧‧fluid return catheter 129‧‧‧Flow valve 132‧‧‧Lift air tank 134‧‧‧Vacuum pump 140‧‧‧Gas channel 142‧‧‧Temperature control system 144‧‧‧lift system 146‧‧‧Controller 201, 203, 205, 301, 305 204、304‧‧‧Bottom plate 206‧‧‧Middle board 208,308‧‧‧Top plate 210‧‧‧fluid pipeline 212‧‧‧winding catheter 214‧‧‧Supply entrance 216‧‧‧ Return outlet 218‧‧‧thermocouple 220‧‧‧Gas pipeline 222‧‧‧bolt 224‧‧‧Ejector manifold 226, 326‧‧‧ fluid pipeline assembly 228,328‧‧‧Supply pipeline 229‧‧‧Seal 230‧‧‧Supply shunt pipeline 232, 332‧‧‧ Return pipeline 234, 334 236‧‧‧winding pipe entrance 238‧‧‧winding pipe outlet 312‧‧‧Catheter 336‧‧‧Catheter entrance 338‧‧‧ Conduit outlet

In order to understand the details of the above features of the present disclosure, by referring to some embodiments shown in the drawings, a more accurate description of the present disclosure (simple summary above) can be obtained. However, it should be noted that these drawings depict only exemplary embodiments, and therefore should not be considered as limiting its scope and allowing other equivalent embodiments. FIG. 1 is a cross-sectional view of an example of a plasma enhanced chemical vapor deposition (PECVD) system in an embodiment. FIG. 2A is a top expanded view of the substrate support assembly in an embodiment, and FIG. 2B is a bottom expanded view of the substrate support assembly. FIG. 2C is a negative perspective view of the substrate support assembly in an embodiment. Figures 2D and 2E are enlarged perspective views of the substrate support assembly in an embodiment. 2F to 2H are cross-sectional views of the substrate support assembly in an embodiment. FIG. 3A is a top expanded view of the substrate support assembly in an embodiment. FIG. 3B is a negative perspective view of the temperature control system of the substrate support assembly in an embodiment. For ease of understanding, the same element symbols are used when possible to denote the same elements shared in the drawings. It is expected that the elements and features in one embodiment can be beneficially incorporated into other embodiments without further description.

100‧‧‧ chamber

102‧‧‧chamber body

103‧‧‧Backboard

104‧‧‧Substrate support assembly

105‧‧‧Diffusion plate

106‧‧‧Gas distribution module

107‧‧‧Gas inlet channel

108‧‧‧ processing space

109、130‧‧‧Different tube

110‧‧‧ substrate

111‧‧‧Gas source

112‧‧‧Substrate support

113‧‧‧Air chamber

114‧‧‧Lower surface

115‧‧‧Bottom surface

116‧‧‧Upper surface

117, 124‧‧‧ heat exchanger

118‧‧‧ backbone

119‧‧‧ fluid outlet conduit

120‧‧‧channel

121‧‧‧ Entrance

123‧‧‧ fluid inlet conduit

125‧‧‧Export

126‧‧‧ fluid supply conduit

127‧‧‧RF power supply

128‧‧‧fluid return catheter

129‧‧‧Flow valve

132‧‧‧Lift air tank

134‧‧‧Vacuum pump

140‧‧‧Gas channel

142‧‧‧Temperature control system

144‧‧‧lift system

146‧‧‧Controller

Claims (20)

A support assembly, including: A bottom plate, the bottom plate includes: A supply pipe with a supply inlet configured to be coupled to a fluid supply conduit of a heat exchanger; A return pipeline with a return outlet configured to be coupled to a fluid return conduit of the heat exchanger; A pair of supply shunt pipes to which the fluid is coupled; A pair of return flow shunt pipes to which the fluid is coupled; A plurality of winding ducts, each of which includes: A winding duct inlet connected to one of the supply branch pipes; and A winding duct outlet connected to one of the return flow diverting ducts; and A first part of a gas channel, which is provided through the bottom plate; and A middle plate is arranged between the bottom plate and a top plate. The top plate includes: One surface, operable to support a substrate; A plurality of gas pipes, each of the gas pipes having a plurality of bolts exposed on the surface; and An injector branch pipe is coupled to each of the gas pipes and to a second portion of the gas passage provided through the intermediate plate. The support assembly as described in item 1 of the patent application scope, wherein when the heat exchanger is coupled to the supply pipe and the return pipe, the heat exchanger is operable to pass from the fluid supply conduit through the supply pipe, the The supply branch pipe, the plurality of winding ducts, the return flow branch pipes, the return pipe, and the fluid return pipe return to the heat exchanger to circulate the fluid. The support assembly as described in item 2 of the patent application scope, wherein a controller coupled to the heat exchanger is operable to control the circulation of the fluid while maintaining a predetermined support member temperature. The support assembly as described in item 3 of the patent application scope, wherein a plurality of thermocouples disposed in the bottom plate are coupled to the controller. The supporting assembly as described in item 1 of the patent application scope, wherein the intermediate plate is at least one of casting, welding, forging, hot isostatic pressing, and sintering to the bottom plate. The support assembly as described in item 1 of the patent application scope, wherein the top plate is at least one of casting, welding, forging, hot isostatic pressing, and sintering to the intermediate plate. The support assembly as described in item 1 of the patent application scope, wherein the intermediate plate separates the bottom plate from the top plate. The support assembly as described in item 1 of the patent application scope, wherein the gas channel is coupled to a manifold, and wherein: A liter air delivery tank, coupled to the branch pipe, the liter air delivery tank operable to transport the blast air through the gas channel, the injector branch pipe, the gas pipes, and the latches to move A substrate is pushed away from the surface of the top plate; and A vacuum pump is coupled to the manifold, the vacuum pump is operable to generate suction through the gas channel, the injector manifold, the gas pipes, and the pins to hold the substrate at the On the surface of the top plate. The support assembly as described in item 1 of the patent application scope, wherein in a processing chamber, the support assembly may be disposed relative to a diffusion plate disposed in the processing chamber. A support assembly, including: A bottom plate, the bottom plate includes: A supply pipe with a supply inlet configured to be coupled to a fluid supply conduit of a heat exchanger; A pair of return shunt pipes, fluidly coupled to the supply pipe through a plurality of pipe outlets of a plurality of pipes, the pipes having a plurality of pipe inlets coupled to the supply pipe; and A pair of return pipes, coupled to the return flow shunt pipes, wherein each of the return pipes has a return outlet configured to be coupled to a fluid return conduit of the heat exchanger; and A top plate is coupled to the bottom plate. The top plate has a surface operable to support a substrate. The support assembly as recited in item 10 of the patent application scope, wherein when the heat exchanger is coupled to the supply pipe and the return pipes, the heat exchanger is operable to pass from the fluid supply conduit through the supply pipe, the The conduits, the return flow diverting pipes, the return pipes, and the fluid return pipe return to the heat exchanger to circulate the fluid. The support assembly as recited in item 11 of the patent application scope, wherein a controller coupled to the heat exchanger is operable to control the circulation of the fluid while maintaining a predetermined support member temperature. The support assembly as described in item 12 of the patent application scope, wherein a plurality of thermocouples disposed in the bottom plate are coupled to the controller. The support assembly according to item 10 of the patent application scope, wherein the top plate is at least one of casting, welding, forging, hot isostatic pressing, and sintering to the bottom plate. A chamber, including: A diffusion plate with a plurality of gas channels provided in the diffusion plate; A radio frequency (RF) power supply, coupled to the diffusion plate; A support assembly, disposed relative to the diffusion plate, the support assembly includes: A bottom plate, the bottom plate includes: A supply pipe with a supply inlet configured to be coupled to a fluid supply conduit of a heat exchanger; A return pipeline with a return outlet configured to be coupled to a fluid return conduit of the heat exchanger; A pair of supply shunt pipes to which the fluid is coupled; A pair of return flow shunt pipes to which the fluid is coupled; A plurality of winding ducts, each of which includes: A winding duct inlet connected to one of the supply branch pipes; A winding duct outlet connected to one of the return flow diverting ducts; and A first part of a gas channel, which is provided through the bottom plate; and A middle plate is arranged between the bottom plate and a top plate. The top plate includes: One surface, operable to support a substrate; A plurality of gas pipes, each of the gas pipes having a plurality of bolts exposed on the surface; and An injector branch pipe is coupled to each of the gas pipes and to a second portion of the gas passage provided through the intermediate plate. The chamber as recited in item 15 of the patent application scope, wherein when the heat exchanger is coupled to the supply pipe and the return pipe, the heat exchanger is operable to pass from the fluid supply conduit through the supply pipe, the The supply branch pipe, the winding ducts, the return flow branch pipes, the return pipe, and the fluid return pipe return to the heat exchanger to circulate the fluid. The chamber as recited in claim 16 of the patent application, wherein a controller coupled to the heat exchanger is operable to control the circulation of the fluid while maintaining a predetermined support member temperature. The chamber described in item 17 of the patent application scope, in which a plurality of thermocouples disposed in the bottom plate are coupled to the controller. The chamber as described in item 15 of the patent application scope, wherein the intermediate plate is at least one of casting, welding, forging, hot isostatic pressing, and sintering to the bottom plate. The chamber as described in item 15 of the patent application scope, wherein the top plate is at least one of casting, welding, forging, hot isostatic pressing, and sintering to the intermediate plate.

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