TWI722451B - Support assembly and chamber using the same - Google Patents

Abstract

Embodiments described herein provide substrate support assemblies that improve the uniformity of deposited films or films to be etched. Each of the substrate support assemblies include one of unidirectional and bidirectional flow of fluid through a bottom plate of a substrate support such that excess heat is removed and/or heat is provided to the substrate support to maintain the predetermined support temperature. The predetermined support temperature is set to a temperature based on process parameters such that a uniform temperature distribution of a substrate is maintained independent of the intensity of the plasma during processing to result in a deposited film with improved uniformity of film thickness or etched film with improved uniformity.

Description

Supporting components and chambers using them

The embodiment of the present disclosure relates to a processing chamber, such as a plasma-enhanced chemical vapor deposition (PECVD) chamber. More specifically, the embodiment of the present disclosure relates to a substrate support assembly used in a processing chamber.

Chemical vapor deposition (CVD) and plasma enhanced chemical vapor deposition are commonly used to deposit thin films on substrates, such as transparent substrates for flat panel displays. Chemical vapor deposition and plasma enhanced chemical vapor deposition are generally completed by introducing a precursor gas or gas mixture into a vacuum chamber containing a substrate. The precursor gas or gas mixture is usually directed downwards and passes through a diffuser located near the top of the chamber. The diffuser is arranged above the substrate, and the substrate is located a short distance above the heated substrate support, so that the diffuser and the precursor gas or gas mixture can be heated by the radiant heat from the substrate support. The substrate support is heated to a predetermined temperature to heat the substrate to a desired temperature range. Enhanced Chemical Vapor in Plasma During the deposition, radio frequency power is applied to the chamber from one or more radio frequency sources coupled to the chamber to energize (for example, excite) the precursor gas or gas mixture in the chamber to form a plasma . Within a processing temperature range, the excited precursor gas or gas mixture will react to form a material film on the surface of the substrate. The substrate is located on the heated substrate support, and the by-products generated during the reaction are evacuated from the chamber through the exhaust system.

The plates processed by the chemical vapor deposition and plasma enhanced chemical vapor deposition processes are generally relatively large, usually exceeding 370 mm × 470 mm. Therefore, especially compared with the substrate support used in the semiconductor wafer process of 200 mm and 300 mm, the substrate support embedded with resistive heating elements is used to heat a relatively large substrate to In the required temperature range. However, due to the strength of the plasma during processing, the temperature of the resistively heated substrate support will rise, and the temperature distribution of the resistively heated substrate support will become uneven, causing the temperature of the substrate to exceed the required temperature range As well as the uneven temperature distribution of the substrate, the deposited film has an inconsistent thickness.

Therefore, there is a need to improve the substrate support assembly to improve the consistency of the deposited film layer or the film layer to be etched.

In one embodiment, a support assembly is provided. The supporting assembly includes a bottom plate, a middle plate and a top plate. The bottom plate includes supply channels, fluid supply conduits with configuration and heat exchangers (fluid supply conduit) a supply inlet that can be coupled; a return channel having a return outlet configured to be coupled to a fluid return conduit of the heat exchanger; fluid coupling A pair of supply bypass channels connected to the supply pipeline; a pair of return bypass channels fluidly coupled to the return pipeline; a plurality of coiled conduits; and a pair of coiled conduits provided through the bottom plate The first part of the gas passage. Each winding pipe includes a winding pipe inlet connected to one of the supply branch pipes, and a winding pipe outlet connected to one of the return branch pipes. The middle plate is arranged between the bottom plate and the top plate. The top plate includes a surface operable to support the substrate; a plurality of gas channels, each gas channel having a pin exposed on the surface; and an ejector manifold coupled to each A gas pipe and a second part coupled to a gas channel provided through the middle plate.

In another embodiment, a support assembly is provided. The support assembly includes a bottom plate, and a top plate coupled to the bottom plate. The top plate includes a surface operable to support the substrate. The bottom plate includes a supply pipe with a supply inlet configured to be coupled to the fluid supply pipe of the heat exchanger; a pair of return flow branch pipes are fluidly coupled to the supply pipe through the pipe outlet of the pipe, wherein the pipe has a supply pipe coupled to the supply pipe Conduit inlet; and a pair of return pipes coupled to the return shunt pipe. Each return pipe has a return outlet configured to be coupled to a fluid return conduit of the heat exchanger.

In yet another embodiment, a chamber is provided. The chamber includes a diffuser plate, with a plurality of gas channels disposed therethrough; coupled The radio frequency power supply to the diffuser plate; and the supporting assembly arranged relative to the diffuser plate. The supporting assembly includes a bottom plate, a middle plate and a top plate. The bottom plate includes a supply pipe with a supply inlet configured to be coupled with the fluid supply pipe of the heat exchanger; a return pipe with a return outlet configured to be coupled with the fluid return pipe of the heat exchanger; and a fluid coupled to the supply pipe A pair of supply shunt pipes; a pair of return shunt pipes fluidly coupled to the return pipe; a plurality of winding pipes; and the first part of the gas channel provided through the bottom plate. Each winding pipe includes a winding pipe inlet connected to one of the supply branch pipes, and a winding pipe outlet connected to one of the return branch pipes. The middle plate is arranged between the bottom plate and the top plate. The top plate includes a surface operable to support the substrate; a plurality of gas pipes, each gas pipe having a plug exposed on the surface; and an ejector branch pipe, coupled to each gas pipe and coupled to a set through the middle plate The second part of the gas channel.

100: chamber

102: Chamber body

103: Backplane

104: Substrate support assembly

105: diffuser

106: Gas distribution assembly

107: Gas inlet channel

108: processing space

109, 130: branch pipe

110: substrate

111: gas source

112: substrate support

113: Air Chamber

114: lower surface

115: bottom surface

116: upper surface

117, 124: Heat exchanger

118: Trunk

119: Fluid Outlet Conduit

120: Channel

121: entrance

123: fluid inlet duct

125: exit

126: Fluid Supply Conduit

127: RF power supply

128: fluid return pipe

129: Flow Valve

132: Ascending air conveying trough

134: Vacuum Pump

140: gas channel

142: Temperature Control System

144: Lift-off system

146: Controller

201, 203, 205, 301, 305: thickness

204, 304: bottom plate

206: Intermediate plate

208, 308: top plate

210: fluid pipe

212: Coiling catheter

214: Supply Entrance

216: Return exit

218: Thermocouple

220: Gas pipeline

222: Bolt

224: Ejector branch pipe

226, 326: Fluid piping components

228, 328: Supply pipeline

229: Seal

230: supply shunt pipeline

232, 332: Return pipeline

234, 334: Return flow divider pipeline

236: coiled pipe inlet

238: Coiling pipe outlet

312: Catheter

336: Conduit Entrance

338: Catheter Outlet

In order to understand the details of the above-mentioned features of the present disclosure, by referring to some embodiments shown in the drawings, a more precise description of the present disclosure (simply summarized above) can be obtained. However, it should be noted that these drawings only depict exemplary embodiments, and therefore should not be considered as limiting the scope and allowing other equivalent embodiments.

FIG. 1 is a cross-sectional view of an example of a plasma enhanced chemical vapor deposition (PECVD) system in an embodiment.

Figure 2A is a top expanded view of the substrate support assembly in an embodiment, and Figure 2B is a bottom expanded view of the substrate support assembly.

Figure 2C is a negative perspective view of the substrate support assembly in an embodiment.

2D and 2E are negative perspective enlarged views of the substrate support assembly in an embodiment.

2F to 2H are cross-sectional views of the substrate support assembly in an embodiment.

Figure 3A is a top unfolded view of the substrate support assembly in an embodiment.

Figure 3B is a negative perspective view of the temperature control system of the substrate support assembly in an embodiment.

For ease of understanding, the same component symbols are used where possible to represent the same components in the drawings. It is expected that the elements and features in one embodiment can be beneficially combined with other embodiments without further description.

The embodiments described herein propose a substrate support assembly that can improve the consistency of the deposited film layer or the film layer to be etched. Each substrate support assembly includes one of a single flow direction fluid and a dual flow direction fluid, which flows through the bottom plate of the substrate support member so that excess heat can be removed, and/or provides heat to the substrate support member to maintain a predetermined support member temperature. The predetermined support temperature is a temperature set based on the process parameters, so that during the processing, the uniform temperature distribution of the substrate can be maintained independently of the strength of the plasma Therefore, the deposited film has an improved film thickness uniformity, or the etched film has an improved uniformity.

Figure 1 is a cross-sectional view of an example of a plasma-enhanced chemical vapor deposition (PECVD) chamber 100, which can be taken from Applied Materials Co., Ltd. located in Santa Clara (California). It should be understood that the system described below is an exemplary chamber, and other chambers from other manufacturers can also be used or modified to achieve the aspects of the present disclosure. The chamber 100 includes a chamber body 102, a substrate support assembly 104, and a gas distribution assembly 106. The gas distribution component 106 is disposed relative to the substrate support component 104 and defines a processing space 108 between the two.

The gas distribution component 106 is configured to evenly distribute the gas to the processing space 108 in the chamber 100 to facilitate deposition of the film on the substrate 110 or etching the film from the substrate 110, and the substrate 110 is set on the substrate support On the substrate support 112 of the assembly 104. The gas distribution assembly 106 includes a diffuser plate 105 suspended from the back plate 103. A plurality of gas channels (not shown) are formed through the diffusion plate 105 so that a predetermined uniform gas distribution can enter the processing space 108 through the gas distribution component 106. The back plate 103 maintains the diffuser plate 105 in a spaced-apart relationship with the bottom surface 115 of the back plate 103, and thus defines an air chamber 113 therebetween. The back plate 103 includes a gas inlet channel 107 coupled to the branch pipe 109 and can be coupled to one or more gas sources 111. The gas chamber 113 allows the gas to flow through the gas inlet channel 107 to be evenly distributed across the width of the diffuser plate 105 so that a uniformly distributed airflow can flow through the gas channel of the diffuser plate 105.

In an embodiment that can be combined with other embodiments herein, the heat exchanger 117 is in fluid communication with the gas pipe (not shown) of the diffuser plate 105. The heat exchanger 117 is in fluid communication with the gas pipe through the fluid outlet pipe 119 and the fluid inlet pipe 123. The fluid outlet pipe 119 is connected to the inlet 121 of the diffuser fluid pipe, and the fluid inlet pipe 123 is connected to the outlet 125 of the fluid pipe so that excess heat can be removed and/or heat is supplied to the diffuser 105 to maintain a The predetermined diffuser temperature. The predetermined diffuser temperature can be set based on process parameters. The fluid may include a material that maintains the temperature at about 50 degrees Celsius to about 450 degrees Celsius.

The gas distribution component 106 is coupled to a radio frequency (RF) power supply 127, and the radio frequency power supply 127 is used to generate plasma for processing the substrate 110. The substrate support assembly 104 is generally grounded so that radio frequency power is supplied from the radio frequency power supply 127 to the gas distribution assembly 106 to provide capacitive coupling between the diffuser 105 and the substrate support 112. When RF power is supplied to the diffuser plate 105, an electric field is generated between the diffuser plate 105 and the substrate support 112, so that the gas atoms existing in the processing space 108 between the substrate support 112 and the diffuser plate 105 are dissociated. Release electrons.

The substrate support assembly 104 is at least partially disposed in the chamber body 102. During the manufacturing process, the substrate support assembly 104 supports the substrate 110. The substrate support assembly 104 includes a substrate support 112. The substrate support 112 may be made of aluminum (Al) or anodized aluminum (anodized Al). The substrate support 112 has a lower surface 114 for mounting the trunk 118 and an upper surface 116 for supporting the substrate 110. The backbone 118 has the guide of the substrate support assembly 104 Pipe used by the channel 120. The trunk 118 couples the substrate support assembly 104 to a lifting system (not shown), and can move the substrate support assembly 104 between a processing position (as shown in the figure) and a transfer position to facilitate the removal of the substrate from the chamber body 102 The slit valve 129 is transferred into and out of the chamber 100.

The substrate support assembly 104 includes a temperature control system 142 (as shown in FIGS. 2A to 3B). In an embodiment that can be combined with other embodiments herein, the substrate support assembly 104 includes a temperature control system 142 and a liftoff system 144 (as shown in FIGS. 2A to 2H). The temperature control system 142 includes at least one fluid pipe coupled to the heat exchanger 124 (as shown in FIGS. 2A to 3B). The heat exchanger 124 passes through the fluid supply conduit 126 connected to the inlet of at least one fluid pipe (as shown in Figures 2A to 3B), and through the outlet connected to at least one fluid pipe (as shown in Figures 2A to 3B). The fluid return conduit 128 shown in Figure 3B) is connected to this at least one fluid pipe. The heat exchanger 124 circulates fluid through the substrate support assembly 104 so that excess heat can be removed, and/or provides heat to the substrate support 112 to maintain a predetermined support temperature. The predetermined support temperature can be set based on the process parameters, so that the uniform temperature distribution of the substrate 110 during the processing can be maintained independently of the strength of the plasma, resulting in an improved film thickness consistency of the deposited film, or The etched film layer has improved consistency. The fluid may include a material that maintains the temperature at about 50 degrees Celsius to about 450 degrees Celsius.

The lift-off system 144 includes a plurality of gas pipes coupled to the branch pipe 130 (as shown in FIGS. 2A to 2H). Each gas pipeline includes exposed The pins to the upper surface 116 of the substrate support 112 (as shown in Figures 2A to 2H). The branch pipe 130 is coupled to the ascending gas delivery tank 132. The ascending gas conveying tank 132 can convey the ascending gas to the branch pipe 130 and enter a plurality of gas pipes through the gas passage 140. The lift-off system 144 further includes a vacuum pump 134 connected to the branch pipe 130. The vacuum pump 134 can generate suction through the branch pipe 130 and the gas channel 140 in fluid communication with a plurality of gas pipes. The ascending air flowing through the plurality of pins enables the substrate 110 to be pushed away from the upper surface 116 of the substrate support 112. The suction force generated by the plurality of pins enables the substrate 110 to be held on the upper surface 116 of the substrate support 112.

The controller 146 is coupled to the chamber 100 and is configured to control many levels of the chamber 100 during processing. The controller 146 may include a central processing unit (CPU) (not shown), memory (not shown), auxiliary circuits (or input/output unit I/O) (not shown). The central processing unit can be one of the computer processors in any form. These computer processors are used in industrial settings to control various processes and hardware (for example, motors or other hardware) and monitor processes (For example, the flow rate of fluid and ascending gas). The memory (not shown) is connected to the central processing unit and can be one or more readily available memory (readily available memory), such as random access memory (RAM), read-only memory (read only) only memory, ROM), floppy disk, hard disk, or any other form of digital storage device (local or remote). Software instructions and data can be encoded and stored in the memory to command the central processing unit. The auxiliary circuit is also connected to the central processing unit and used in a conventional manner In the auxiliary processor. Auxiliary circuits may include conventional caches, power supplies, clock circuits, input/output circuitry, subsystems, and the like. The program (or computer instruction) readable by the controller 146 determines the operation program executable by the chamber 100. The program may be software readable by the controller 146, and may include some commands to monitor and control, for example, a predetermined temperature of the support, the holding of the substrate 110, and the lift-off of the substrate 110.

FIG. 2A is a top expanded view of the substrate support assembly 104, and FIG. 2B is a bottom expanded view of the substrate support assembly. The substrate support assembly 104 includes a temperature control system 142 and a lift-off system 144. FIG. 2C is a negative perspective view of the substrate support assembly 104. 2D and 2E are negative perspective enlarged views of the substrate support assembly 104. 2F to 2H are cross-sectional views of the substrate support assembly 104. The substrate support assembly 104 includes a substrate support 112. The substrate support assembly 104 includes a substrate support 112 having a bottom plate 204, a middle plate 206, a top plate 208 and a backbone 118. The top plate 208 includes an upper surface 116 and the bottom plate 204 includes a lower surface 114. In an embodiment that can be combined with other embodiments herein, the intermediate plate 206 is at least cast, braze, forge, hot iso-statically pressed and sintered. ) To one of the bottom plates 204. In an embodiment that can be combined with other embodiments herein, the top plate 208 is at least one of casting, welding, forging, hot isostatic pressing, and sintering to the bottom plate 204. The bottom plate 204 has a thickness 201, the middle plate 206 has a thickness 203, and the top plate 208 has a thickness 205.

As shown in FIG. 2A, in an embodiment that can be combined with other embodiments herein, the temperature control system 142 of the bottom plate 204 has a fluid pipe 210 disposed therein. The fluid pipe 210 is a single pipe of a plurality of winding pipes 212 that are in fluid communication with each other. Each of the plurality of winding ducts 212 has a turning point. The heat exchanger 124 is fluidly connected to the fluid pipe 210 through the fluid supply pipe 126 connected to the supply inlet 214 of the fluid pipe 210 and through the fluid return pipe 128 connected to the return outlet 216 of the fluid pipe 210. In the embodiment of the fluid pipe 210, one of the plurality of winding ducts 212 has a supply inlet 214 and a return outlet 216. The heat exchanger 124 circulates the fluid in a single flow direction through the fluid pipe 210, so that excess heat can be removed, and/or provides heat to the substrate support 112 to maintain a predetermined support temperature. The predetermined support temperature may be a temperature set based on process parameters, so that the uniform temperature distribution of the substrate during processing can be maintained independently of the strength of the plasma, resulting in an improved film thickness consistency of the deposited film, or The etched film layer has improved consistency. In an embodiment that can be combined with other embodiments herein, the temperature control system includes a plurality of thermocouples 218 coupled to the controller 146 to determine the temperature of the substrate support 112. The controller 146 coupled to the thermocouple 218 and the heat exchanger 124 is operable to monitor and control the circulation of the fluid entering the fluid pipe 210 and the temperature of the fluid.

The bottom plate 204 further includes a first part of the gas channel 140, which is aligned with the second part of the gas channel 140 on the middle plate 206. The middle plate 206 separates the bottom plate 204 from the top plate 208. The lift-off system 144 includes the A plurality of gas pipelines 220. Each of the plurality of gas pipes 220 includes a plug 222 exposed to the upper surface 116 of the substrate support 112. Each of the plurality of gas pipes 220 is fluidly coupled to the ejector branch pipe 224, and the ejector branch pipe 224 is in fluid communication with the gas channel 140 coupled to the branch pipe 130. The branch pipe 130 is coupled to the ascending gas delivery tank 132. The ascending gas delivery tank 132 can transport the ascending gas to the branch pipe 130, enter the ejector branch pipe 224 through the gas passage 140, and pass through a plurality of gas pipes 220 and The plug 222 exposed to the upper surface 116 of the substrate support 112. The vacuum pump 134 can pass through the gas channel 140 to the ejector branch pipe 224, and generate suction through a plurality of gas pipes 220 and the pins 222 exposed on the upper surface 116 of the substrate support 112. The ascending air flowing through the plurality of pins 222 enables the substrate 110 to be pushed away from the upper surface 116 of the substrate support 112. The suction force generated by the plurality of pins 222 enables the substrate 110 to be held on the upper surface 116 of the substrate support 112. In an embodiment that can be combined with other embodiments herein, the top plate 208 includes a seal 229 (for example, an O-ring) to maintain the pressure in the processing space 108 of the chamber 100.

In an embodiment that can be combined with other embodiments herein (as shown in FIG. 2C to FIG. 2H), the temperature control system 142 of the bottom plate 204 has a fluid pipe assembly 226 disposed therein. The fluid conduit assembly 226 includes a supply conduit 228 having a supply inlet 214. The supply pipe 228 is fluidly coupled to a pair of supply branch pipes 230. The fluid pipe assembly 226 includes a return pipe 232 having a return outlet 216. The return pipe 232 is fluidly coupled to a pair of return shunt pipes 234. Each of the plurality of winding ducts 212 has a supply shunt pipe connected to one of them The winding pipe inlet 236 of the channel 230 and the winding pipe outlet 238 connected to one of the return flow branch pipes 234. The heat exchanger 124 passes through the fluid supply pipe 126 to the supply pipe 228 and then enters the supply branch pipe 230, passes through a plurality of winding pipes 212 to the return branch pipe 234 and then enters the return pipe 232, and returns to the heat exchanger 124 through the fluid return pipe 128 And the fluid is circulated. The heat exchanger 124 circulates the fluid in a bidirectional flow direction through the fluid pipe assembly 226, so that excess heat can be removed, and/or provides heat to the substrate support 112 to maintain a predetermined support temperature. In an embodiment that can be combined with other embodiments herein, the temperature control system 142 includes a plurality of thermocouples 218 coupled to the controller 146 to determine the temperature of the substrate support 112. The controller 146 coupled to the thermocouple 218 and the heat exchanger 124 is operable to monitor and control the circulation of the fluid entering the fluid pipe assembly 226 and the temperature of the fluid.

FIG. 3A is a top expanded view of the substrate support assembly 104 including the temperature control system 142. FIG. 3B is a negative perspective view of the temperature control system 142 of the substrate support assembly 104. The substrate support assembly 104 includes a substrate support 112 having a bottom plate 304, a top plate 308, and a backbone 118. The top plate 308 includes an upper surface 116 and the bottom plate 304 includes a lower surface 114. In an embodiment that can be combined with other embodiments herein, the top plate 308 is at least one of casting, welding, forging, hot isostatic pressing, and sintering to the bottom plate 304. The bottom plate 304 has a thickness 301 and the top plate 308 has a thickness 305.

As shown in Figure 2A, in an embodiment that can be combined with other embodiments herein, the temperature control system 142 of the bottom plate 304 has a flow 体管210。 Body pipe 210. The fluid pipe 210 is a single pipe formed by a plurality of winding pipes 212 in fluid communication with each other. Each of the plurality of winding ducts 212 has a turning point. The heat exchanger 124 is in fluid communication with the fluid pipe 210 through the fluid supply pipe 126 connected to the supply inlet 214 of the fluid pipe 210 and through the fluid return pipe 128 connected to the return outlet 216 of the fluid pipe 210. In the embodiment of the fluid pipe 210, one of the plurality of winding ducts 212 has a supply inlet 214 and a return outlet 216. The heat exchanger 124 circulates the fluid in a single flow direction through the fluid pipe 210 so that excess heat can be removed and/or provide heat to the substrate support 112 to maintain a predetermined support temperature. The predetermined support temperature may be a temperature set based on process parameters, so that the uniform temperature distribution of the substrate during processing can be maintained independently of the strength of the plasma, resulting in an improved film thickness consistency of the deposited film, or The etched film layer has improved consistency.

As shown in FIGS. 3A to 3B, in another embodiment that can be combined with other embodiments herein, the temperature control system 142 of the bottom plate 304 has a fluid pipe assembly 326 disposed therein. The fluid conduit assembly 326 includes a supply conduit 328 having a supply inlet 214. The supply pipe 328 is fluidly coupled to a pair of return shunt pipes 334 through the pipe outlet 338 of the pipe 312, and the pipe 312 has a pipe inlet 336 coupled to the supply pipe 328. Each return flow branch pipe 334 is coupled to a return pipe 332 having a return outlet 216.

The heat exchanger 124 passes through the fluid supply pipe 126 to the supply pipe 328, passes through a plurality of pipes 312 to the return flow branch pipe 334 and then enters the return pipe 332, and returns to the heat exchanger 124 through the fluid return pipe 128 to remove the fluid. cycle. The heat exchanger 124 circulates the fluid in a bidirectional flow direction through the fluid pipe assembly 326 so that excess heat can be removed and/or heat is provided to the substrate support 112 to maintain a predetermined support temperature. In an embodiment that can be combined with other embodiments herein, the temperature control system 142 includes a plurality of thermocouples 218 coupled to the controller 146 to determine the temperature of the substrate support 112. The controller 146 coupled to the thermocouple 218 and the heat exchanger 124 is operable to monitor and control the circulation of the fluid entering the fluid pipe assembly 326 and the temperature of the fluid.

In summary, this article describes a substrate support assembly that can improve the consistency of the deposited film layer or the film layer to be etched. Each substrate support assembly includes one of a single flow direction fluid and a dual flow direction fluid. The bottom plate of the substrate support allows excess heat to be removed and/or heat is provided to the substrate support to maintain a predetermined temperature of the support. The predetermined support temperature may be a temperature set based on process parameters, so that the uniform temperature distribution of the substrate during processing can be maintained independently of the strength of the plasma, resulting in an improved film thickness consistency of the deposited film, or The etched film layer has improved consistency.

Although the foregoing is an example of the present disclosure, other and further examples of the present disclosure can be designed without departing from the basic scope of the present disclosure, and the scope of the present disclosure is determined by the scope of the following patent applications.

100: chamber

102: Chamber body

103: Backplane

104: Substrate support assembly

105: diffuser

106: Gas distribution assembly

107: Gas inlet channel

108: processing space

109, 130: branch pipe

110: substrate

111: gas source

112: substrate support

113: Air Chamber

114: lower surface

115: bottom surface

116: upper surface

117, 124: Heat exchanger

118: Trunk

119: Fluid Outlet Conduit

120: Channel

121: entrance

123: fluid inlet duct

125: exit

126: Fluid Supply Conduit

127: RF power supply

128: fluid return pipe

129: Flow Valve

132: Ascending air conveying trough

134: Vacuum Pump

140: gas channel

142: Temperature Control System

144: Lift-off system

146: Controller

Claims (20)

A supporting assembly includes: a bottom plate, the bottom plate comprising: a supply pipe with a supply inlet configured to be coupled with a fluid supply pipe of a heat exchanger; a return pipe with a supply inlet configured with the heat exchanger A return outlet to which the fluid return pipe can be coupled; a pair of supply branch pipes, which are fluidly coupled to the supply pipe; a pair of return branch pipes, which are fluidly coupled to the return pipe; a plurality of winding pipes, each of which is wound The conduit includes: a winding pipe inlet connected to one of the supply branch pipes; and a winding pipe outlet connected to one of the return branch pipes; and a first part of a gas channel , Set through the bottom plate; and an intermediate plate, set between the bottom plate and a top plate, the top plate includes: a surface operable to support a substrate; a plurality of gas pipes, each of the gas pipes has exposed A plurality of pins on the surface; and an ejector branch pipe coupled to each of the gas pipes and to a second part of the gas channel provided through the intermediate plate. The support assembly described in claim 1, wherein when the heat exchanger is coupled to the supply pipe and the return pipe, the heat exchanger is operable to pass from the fluid supply pipe through the supply pipe, the The supply branch pipe, the plurality of winding pipes, the return branch pipes, the return pipe, and the fluid returns to the heat exchanger through the fluid return pipe to circulate the fluid. According to the support assembly described in claim 2, wherein a controller coupled to the heat exchanger is operable to control the circulation of the fluid to maintain a predetermined temperature of the support. The support assembly described in item 3 of the scope of patent application, wherein a plurality of thermocouples arranged in the bottom plate are coupled to the controller. According to the supporting component described in the first item of the scope of patent application, the intermediate plate is at least one of casting, welding, forging, hot isostatic pressing, and sintering to the bottom plate. According to the support assembly described in item 1 of the scope of patent application, the top plate is at least one of casting, welding, forging, hot isostatic pressing, and sintering to the middle plate. According to the supporting assembly described in item 1 of the scope of patent application, the middle plate separates the bottom plate from the top plate. The support assembly described in item 1 of the scope of patent application, wherein the gas passage is coupled to a branch pipe, and wherein: a lifting gas conveying tank is coupled to the branch pipe, and the lifting gas conveying tank is operable In order to transport the ascending gas through the gas channel, the ejector branch Pipes, the gas pipes, and the pins to push a substrate away from the surface of the top plate; and a vacuum pump coupled to the branch pipe, the vacuum pump being operable to pass through the gas channel, the The ejector branch pipe, the gas pipes, and the plugs generate suction to hold the substrate on the surface of the top plate. According to the support assembly described in item 1 of the scope of patent application, in a processing chamber, the support assembly can be arranged relative to a diffusion plate arranged in the processing chamber. A support assembly includes: a bottom plate, the bottom plate includes: a supply pipe with a supply inlet configured to be coupled to a fluid supply pipe of a heat exchanger; a plurality of pipes, each of the pipes is coupled to the supply An inlet and an outlet of the pipe; and a pair of backflow branch pipes fluidly coupled to the supply pipe, and the outlet of the ducts on the first half of the bottom plate is coupled to a first backflow of the pair of backflow branch pipes Pipe, the outlet of the pipes on the second half of the bottom plate is coupled to a second return pipe of the pair of return branch pipes; wherein each of the return pipes is configured to be coupled with a fluid return pipe of the heat exchanger A return exit; and A top plate is coupled to the bottom plate, and the top plate has a surface operable to support a substrate. The support assembly according to claim 10, wherein when the heat exchanger is coupled with the supply pipe, the first return pipe, and the second return pipe, the heat exchanger is operable to supply the fluid from The pipe passes through the supply pipe, the pipes, the return branch pipes, the first return pipe and the second return pipe, and circulates the fluid through the fluid return pipe back to the heat exchanger. The support assembly described in claim 11, wherein a controller coupled to the heat exchanger is operable to control the circulation of the fluid to maintain a predetermined temperature of the support. The support assembly described in item 12 of the scope of patent application, wherein a plurality of thermocouples arranged in the bottom plate are coupled to the controller. The support assembly according to claim 10, wherein the top plate is at least one of casting, welding, forging, hot isostatic pressing, and sintering to the bottom plate. A chamber includes: a diffuser plate with a plurality of gas channels arranged in the diffuser plate; a radio frequency (RF) power supply coupled to the diffuser plate; a support assembly arranged opposite to the diffuser plate, the support The components include: a bottom plate, which includes: A supply pipe with a supply inlet configured to be coupled to a fluid supply pipe of a heat exchanger; a return pipe with a return outlet configured to be coupled to a fluid return pipe of the heat exchanger; A supply shunt pipe, fluidly coupled to the supply pipe; a pair of return shunt pipes, fluidly coupled to the return pipe; a plurality of winding pipes, each of the winding pipes includes: a winding pipe inlet connected to the One of the supply branch pipes; a winding pipe outlet connected to one of the return branch pipes; and a first part of a gas channel provided through the bottom plate; and an intermediate plate provided Between the bottom plate and a top plate, the top plate includes: a surface operable to support a substrate; a plurality of gas pipes, each of the gas pipes having a plurality of pins exposed on the surface; and an ejector branch pipe , Coupled to each of the gas pipes and to a second part of the gas channel provided through the intermediate plate. The chamber described in item 15 of the scope of patent application, wherein when the heat exchanger is coupled to the supply pipe and the return pipe, the heat exchanger is operable to pass from the fluid supply pipe through the supply pipe, the Supply shunt pipes, these Wind the pipe, the return branch pipes, the return pipe, and circulate the fluid through the fluid return pipe back to the heat exchanger. In the chamber described in claim 16, wherein a controller coupled to the heat exchanger is operable to control the circulation of the fluid and maintain a predetermined temperature of the support. The chamber described in item 17 of the scope of patent application, wherein a plurality of thermocouples arranged in the bottom plate are coupled to the controller. The chamber described in item 15 of the scope of patent application, wherein the intermediate plate is at least one of casting, welding, forging, hot isostatic pressing, and sintering to the bottom plate. The chamber described in item 15 of the scope of patent application, wherein the top plate is at least one of casting, welding, forging, hot isostatic pressing, and sintering to the middle plate.

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