TW202308028A - High temperature susceptor for high power rf applications - Google Patents

High temperature susceptor for high power rf applications Download PDF

Info

Publication number
TW202308028A
TW202308028A TW111120545A TW111120545A TW202308028A TW 202308028 A TW202308028 A TW 202308028A TW 111120545 A TW111120545 A TW 111120545A TW 111120545 A TW111120545 A TW 111120545A TW 202308028 A TW202308028 A TW 202308028A
Authority
TW
Taiwan
Prior art keywords
cooling
cooling gas
substrate
substrate support
gas
Prior art date
Application number
TW111120545A
Other languages
Chinese (zh)
Inventor
馬駿
建華 周
Original Assignee
美商應用材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商應用材料股份有限公司 filed Critical 美商應用材料股份有限公司
Publication of TW202308028A publication Critical patent/TW202308028A/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C23C16/463—Cooling of the substrate
    • C23C16/466—Cooling of the substrate using thermal contact gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft

Abstract

Embodiments described herein relate to a substrate support assembly and methods for controlling the temperature of a substrate support. The substrate support system includes a unidirectional flow of cooling gas through a cooling channel disposed in a top plate of a substrate support. The cooling gas allows the substrate support to maintain the predetermined support temperature at a lower cost and reduced risk of decomposition due to exceeding temperature limits. The cooling channel is designed to ensure that the cooling gas is flowed efficiently through the substrate support. Operation conditions of flowing the cooling gas such as, gas properties, inlet temperature, flow rate, and pressure of the cooling gas may be adjusted such that the cooling gas will maintain the predetermined support temperature.

Description

用於高功率RF應用的高溫載盤High Temperature Carrier Plates for High Power RF Applications

本揭示案的實施例一般係關於處理腔室，如電漿增強化學氣相沉積（PECVD）腔室。更具體地，本揭示案的實施例係關於用於控制基板支撐件的溫度之基板支撐組件和方法。Embodiments of the present disclosure relate generally to processing chambers, such as plasma enhanced chemical vapor deposition (PECVD) chambers. More specifically, embodiments of the present disclosure relate to substrate support assemblies and methods for controlling the temperature of a substrate support.

大體採用電漿增強化學氣相沉積（PECVD）以在基板（如半導體晶圓）上沉積膜。大體採用電漿蝕刻來蝕刻設置在基板上的膜。藉由將一個或多種氣體引入包含基板的處理腔室的處理空間中來完成PECVD和電漿蝕刻。前驅物氣體或氣體混合物通常向下引導通過位於腔室頂部附近的擴散器。擴散器放置在基板上方，該基板以一小距離定位在加熱的基板支撐件上，使得擴散器和前驅物氣體或氣體混合物被來自基板支撐件的輻射熱加熱。將基板支撐件加熱至預定溫度以將基板加熱至所需溫度範圍。在PECVD和電漿蝕刻中，藉由將來自與腔室耦接的一個或多個RF源的射頻（RF）功率施加於腔室而為腔室中的前驅物氣體或氣體混合物供給能量（energize，如激發（excite））而成為電漿。在處理空間中產生電場，使得處理空間中存在的一種或多種氣體的混合物的原子被離子化並釋放電子。在PECVD中將離子化的原子加速到基板支撐件利於膜在基板上的沉積。在電漿蝕刻中將離子化的原子加速到基板支撐件利於設置在基板上的膜之蝕刻。Plasma enhanced chemical vapor deposition (PECVD) is generally employed to deposit films on substrates such as semiconductor wafers. Plasma etching is generally employed to etch a film disposed on a substrate. PECVD and plasma etching are accomplished by introducing one or more gases into the process volume of a process chamber containing the substrate. The precursor gas or gas mixture is typically directed down through a diffuser located near the top of the chamber. The diffuser is placed over the substrate positioned at a small distance on the heated substrate support such that the diffuser and the precursor gas or gas mixture are heated by radiant heat from the substrate support. The substrate support is heated to a predetermined temperature to heat the substrate to a desired temperature range. In PECVD and plasma etching, a precursor gas or gas mixture in a chamber is energized by applying radio frequency (RF) power to the chamber from one or more RF sources coupled to the chamber. , such as excitation (excite)) and become plasma. An electric field is generated in the processing volume such that atoms of the mixture of one or more gases present in the processing volume are ionized and electrons are released. The acceleration of ionized atoms to the substrate support in PECVD facilitates the deposition of films on the substrate. The acceleration of ionized atoms to the substrate support in plasma etching facilitates the etching of films disposed on the substrate.

具有嵌入其中的電阻加熱元件的基板支撐件用於將尺寸相對較大的基板（特別是與用於200mm和300mm半導體晶圓處理的基板支撐件相比）加熱到所需的溫度範圍。然而，由於在處理期間電漿的強度，電阻加熱的基板支撐件的溫度增加並且電阻加熱的基板支撐件的溫度分佈變得不均勻，導致基板的溫度超出所需溫度範圍以及導致基板的不均勻溫度分佈。基板支撐件需要去除電漿散發的熱，以防止基板過熱。基板的溫度在期望的溫度範圍之外以及基板的不均勻溫度分佈導致沉積的膜具有不均勻的厚度。Substrate supports with resistive heating elements embedded in them are used to heat substrates of relatively large dimensions (especially compared to substrate supports used for 200mm and 300mm semiconductor wafer processing) to a desired temperature range. However, due to the intensity of the plasma during processing, the temperature of the resistively heated substrate support increases and the temperature distribution of the resistively heated substrate support becomes non-uniform, causing the temperature of the substrate to exceed the desired temperature range and causing unevenness of the substrate. Temperature Distribution. Substrate supports are required to remove heat from the plasma to prevent overheating of the substrate. The temperature of the substrate is outside the desired temperature range and the non-uniform temperature distribution of the substrate causes the deposited film to have non-uniform thickness.

因此，需要用於控制基板支撐件溫度的基板支撐組件與方法。Accordingly, there is a need for substrate support assemblies and methods for controlling the temperature of a substrate support.

在一個實施例中，提供了一種基板支撐組件。基板支撐組件包括具有上表面的靜電吸盤(ESC)和耦接到ESC的頂板。頂板包括溫度控制系統。溫度控制系統包括一個或多個電阻加熱器、冷卻通道與冷卻氣體源，該一個或多個電阻加熱器設置在該頂板中且可操作以耦接到加熱器電源，該冷卻通道穿過該頂板設置，該冷卻氣體源可操作以與該冷卻通道耦接。冷卻氣體源可操作以使冷卻氣體流過冷卻通道。基板支撐組件進一步包括複數個氣體通道與底板，該複數個氣體通道穿過該頂板設置並向該ESC的該上表面打開，該底板耦接至該頂板。底板包括導熱氣體分配系統。導熱氣體分配系統包括分配通道與導熱氣體源，該分配通道由該底板和該頂板的底表面界定，該導熱氣體源可操作以與該分配通道連接。導熱氣體源可操作以使導熱氣體流過分配通道和複數個氣體通道。基板支撐組件進一步包括控制器，該控制器可操作以與冷卻氣體源連接。該控制器可操作以監測和控制該加熱器電源、該冷卻氣體源和該導熱氣體源，使得維持一預定的支撐件溫度。In one embodiment, a substrate support assembly is provided. The substrate support assembly includes an electrostatic chuck (ESC) having an upper surface and a top plate coupled to the ESC. The roof includes a temperature control system. a temperature control system comprising one or more resistive heaters disposed in the top plate and operable to couple to a heater power supply, a cooling channel passing through the top plate, and a cooling gas source The cooling gas source is operable to couple with the cooling channel. The cooling gas source is operable to flow cooling gas through the cooling channels. The substrate support assembly further includes a plurality of gas channels and a bottom plate, the plurality of gas channels are disposed through the top plate and open to the upper surface of the ESC, and the bottom plate is coupled to the top plate. The baseplate includes a heat transfer gas distribution system. A heat transfer gas distribution system includes a distribution channel bounded by the bottom surfaces of the bottom plate and the top plate and a heat transfer gas source operable to connect with the distribution channel. The heat transfer gas source is operable to flow heat transfer gas through the distribution channel and the plurality of gas channels. The substrate support assembly further includes a controller operable to connect with the cooling gas source. The controller is operable to monitor and control the heater power supply, the cooling gas source and the heat transfer gas source such that a predetermined support temperature is maintained.

在另一個實施例中，提供了一種方法。該方法包括以下步驟：將設置在基板支撐件的上表面上的基板加熱到一預定的支撐件溫度。用設置在該基板支撐件中的一個或多個電阻加熱器加熱該基板。該方法進一步包括以下步驟：使冷卻氣體流過冷卻通道，該冷卻通道穿過該基板支撐件設置。冷卻氣體源使冷卻氣體從導管入口流到導管出口。該方法進一步包括以下步驟：使用耦接到該冷卻氣體源的控制器監測該冷卻氣體的流速。控制器指示冷卻氣體源增加或減少冷卻氣體的流速以維持預定的支撐件溫度。In another embodiment, a method is provided. The method includes the steps of heating a substrate disposed on an upper surface of a substrate support to a predetermined support temperature. The substrate is heated with one or more resistive heaters disposed in the substrate support. The method further includes the step of flowing cooling gas through cooling channels disposed through the substrate support. A cooling gas source flows cooling gas from the conduit inlet to the conduit outlet. The method further includes the step of monitoring the flow rate of the cooling gas using a controller coupled to the cooling gas source. The controller instructs the source of cooling gas to increase or decrease the flow rate of cooling gas to maintain a predetermined support temperature.

在又另一個實施例中，提供了一種方法。該方法包括以下步驟：將基板設置在基板支撐件的上表面上。基板支撐件設置在處理系統的腔室主體中。基板支撐件包括靜電吸盤(ESC)、耦接到ESC的頂板和耦接到頂板的底板。該方法進一步包括以下步驟：用設置在該頂板中的一個或多個電阻加熱器將該基板加熱到一預定的支撐件溫度。該方法進一步包括以下步驟：藉由使來自冷卻氣體源的冷卻氣體流過冷卻通道來處理腔室主體內的基板，該冷卻通道穿過該頂板設置。冷卻氣體源可操作以使冷卻氣體流過冷卻通道以將基板支撐件維持在預定的支撐件溫度。In yet another embodiment, a method is provided. The method includes the steps of disposing a substrate on an upper surface of a substrate support. A substrate support is disposed in a chamber body of a processing system. The substrate support includes an electrostatic chuck (ESC), a top plate coupled to the ESC, and a bottom plate coupled to the top plate. The method further includes the step of heating the substrate to a predetermined support temperature with one or more resistive heaters disposed in the top plate. The method further includes the step of processing the substrate within the chamber body by flowing cooling gas from a cooling gas source through cooling channels disposed through the ceiling. The cooling gas source is operable to flow cooling gas through the cooling channel to maintain the substrate support at a predetermined support temperature.

本案所描述的實施例提供用於控制基板支撐件的溫度之基板支撐組件和方法。該方法包括以下步驟：將設置在基板支撐件的上表面上的基板加熱到一預定的支撐件溫度。用設置在該基板支撐件中的一個或多個電阻加熱器加熱該基板加。該方法進一步包括以下步驟：使冷卻氣體流過冷卻通道，該冷卻通道穿過該基板支撐件設置。冷卻氣體源使冷卻氣體從導管入口流到導管出口。該方法進一步包括以下步驟：使用耦接到該冷卻氣體源的控制器監測該冷卻氣體的流速。控制器指示冷卻氣體源增加或減少冷卻氣體的流速以維持預定的支撐件溫度。Embodiments described herein provide substrate support assemblies and methods for controlling the temperature of a substrate support. The method includes the steps of heating a substrate disposed on an upper surface of a substrate support to a predetermined support temperature. The substrate is heated with one or more resistive heaters disposed in the substrate support. The method further includes the step of flowing cooling gas through cooling channels disposed through the substrate support. A cooling gas source flows cooling gas from the conduit inlet to the conduit outlet. The method further includes the step of monitoring the flow rate of the cooling gas using a controller coupled to the cooling gas source. The controller instructs the source of cooling gas to increase or decrease the flow rate of cooling gas to maintain a predetermined support temperature.

基板支撐組件包括具有上表面的靜電吸盤(ESC)和耦接到ESC的頂板。頂板包括溫度控制系統。溫度控制系統包括一個或多個電阻加熱器、冷卻通道與冷卻氣體源，該一個或多個電阻加熱器設置在該頂板中且可操作以耦接到加熱器電源，該冷卻通道穿過該頂板設置，該冷卻氣體源可操作以與該冷卻通道耦接。冷卻氣體源可操作以使冷卻氣體流過冷卻通道。基板支撐組件進一步包括複數個氣體通道與底板，該複數個氣體通道穿過該頂板設置並向該ESC的該上表面打開，該底板耦接至該頂板。底板包括導熱氣體分配系統。導熱氣體分配系統包括分配通道與導熱氣體源，該分配通道由該底板和該頂板的底表面界定，該導熱氣體源可操作以與該分配通道連接。導熱氣體源可操作以使導熱氣體流過分配通道和複數個氣體通道。基板支撐組件進一步包括控制器，該控制器可操作以與冷卻氣體源連接。該控制器可操作以監測和控制該加熱器電源、該冷卻氣體源和該導熱氣體源，使得維持一預定的支撐件溫度。The substrate support assembly includes an electrostatic chuck (ESC) having an upper surface and a top plate coupled to the ESC. The roof includes a temperature control system. a temperature control system comprising one or more resistive heaters disposed in the top plate and operable to couple to a heater power supply, a cooling channel passing through the top plate, and a cooling gas source The cooling gas source is operable to couple with the cooling channel. The cooling gas source is operable to flow cooling gas through the cooling channels. The substrate support assembly further includes a plurality of gas channels and a bottom plate, the plurality of gas channels are disposed through the top plate and open to the upper surface of the ESC, and the bottom plate is coupled to the top plate. The baseplate includes a heat transfer gas distribution system. A heat transfer gas distribution system includes a distribution channel bounded by the bottom surfaces of the bottom plate and the top plate and a heat transfer gas source operable to connect with the distribution channel. The heat transfer gas source is operable to flow heat transfer gas through the distribution channel and the plurality of gas channels. The substrate support assembly further includes a controller operable to connect with the cooling gas source. The controller is operable to monitor and control the heater power supply, the cooling gas source and the heat transfer gas source such that a predetermined support temperature is maintained.

基板支撐組件提供通過基板支撐件的頂板的冷卻氣體的單向流，使得多餘的熱從基板支撐件移除以維持預定的支撐件溫度。將預定的支撐件溫度設置為基於製程參數的溫度，使得基板的均勻溫度分佈在處理期間保持獨立於電漿的強度。均勻的溫度分佈產生具有改善的膜厚度均勻性之沉積膜或具有改善的均勻性的蝕刻膜。The substrate support assembly provides a unidirectional flow of cooling gas through the top plate of the substrate support such that excess heat is removed from the substrate support to maintain a predetermined support temperature. The predetermined support temperature is set to a temperature based on process parameters such that a uniform temperature profile of the substrate remains independent of plasma strength during processing. A uniform temperature distribution results in a deposited film with improved film thickness uniformity or an etched film with improved uniformity.

圖1是處理系統100的示意性截面圖，其經顯示配置為沉積腔室，其具有基板支撐組件104。基板支撐組件104可用於其他類型的電漿處理腔室，例如電漿處理腔室、退火腔室、蝕刻腔室、物理氣相沉積腔室、化學氣相沉積腔室和離子注入腔室等，以及其他能夠維持基板支撐件的預定的支撐件溫度的系統。預定的支撐件溫度在約攝氏50度和約攝氏350度之間。應當理解，下面描述的處理系統100是示例性系統，且其他系統（包括來自其他製造商的系統）可與本揭示案的態樣一起使用或經修改以實現本揭示案的態樣。FIG. 1 is a schematic cross-sectional view of a processing system 100 shown configured as a deposition chamber having a substrate support assembly 104 . The substrate support assembly 104 can be used in other types of plasma processing chambers, such as plasma processing chambers, annealing chambers, etching chambers, physical vapor deposition chambers, chemical vapor deposition chambers, and ion implantation chambers, etc., and other systems capable of maintaining a predetermined support temperature of a substrate support. The predetermined support temperature is between about 50 degrees Celsius and about 350 degrees Celsius. It should be understood that the processing system 100 described below is an exemplary system and that other systems, including systems from other manufacturers, may be used with or modified to implement aspects of the present disclosure.

處理系統100包括腔室主體102、基板支撐組件104和氣體分配組件106。氣體分配組件106與基板支撐組件104相對定位並且在其間界定處理空間108。The processing system 100 includes a chamber body 102 , a substrate support assembly 104 and a gas distribution assembly 106 . The gas distribution assembly 106 is positioned opposite the substrate support assembly 104 and defines a processing volume 108 therebetween.

氣體分配組件106經配置將氣體（如前驅物氣體）均勻地分配到處理系統100的處理空間108中，以利於將膜沉積到位於基板支撐組件104的基板支撐件112上的基板110上或從其蝕刻膜。氣體分配組件106包括從背板103懸吊的擴散板105。穿過擴散板105形成複數個氣體通路(gas passage，未圖示)以允許均勻的預定分佈的氣體通過氣體分配組件106並進入處理空間108。背板103將擴散板105維持在與背板103的底表面115間隔開的關係，從而在其間界定氣室113。背板103包括氣體入口通路107，氣體入口通路107耦接至歧管109，歧管109可耦接至一個或多個氣體源111。氣室113允許流過氣體入口通路107的氣體在橫跨擴散板105的寬度上均勻地分佈，使得氣體以均勻分佈的方式流過擴散板105的氣體通路。Gas distribution assembly 106 is configured to uniformly distribute gases, such as precursor gases, into processing volume 108 of processing system 100 to facilitate deposition of films onto substrates 110 on substrate supports 112 of substrate support assembly 104 or from It etches the film. Gas distribution assembly 106 includes diffuser plate 105 suspended from back plate 103 . A plurality of gas passages (not shown) are formed through the diffuser plate 105 to allow a uniform predetermined distribution of gas to pass through the gas distribution assembly 106 and into the processing space 108 . The backing plate 103 maintains the diffuser plate 105 in a spaced relationship to the bottom surface 115 of the backing plate 103, thereby defining a plenum 113 therebetween. Backing plate 103 includes gas inlet passages 107 coupled to manifold 109 , which may be coupled to one or more gas sources 111 . The plenum 113 allows the gas flowing through the gas inlet passages 107 to be evenly distributed across the width of the diffuser plate 105 such that the gas flows through the gas passages of the diffuser plate 105 in an evenly distributed manner.

在可以與本案所述之其他實施例結合的一個實施例中，熱交換器117與擴散板105的流體通道(未圖示)流體連通。熱交換器117經由流體出口導管119和流體入口導管123而與流體通道流體連通。流體出口導管119連接到擴散器流體通道的入口121且流體入口導管 123連接到流體通道的出口125，使得去除多餘的熱及/或向擴散板105提供熱以維持預定的擴散器溫度。預定擴散器溫度可以設置為基於製程參數的溫度。流體可包括能夠維持約攝氏50度至約攝氏350度的溫度的材料。In one embodiment, which can be combined with other embodiments described herein, the heat exchanger 117 is in fluid communication with the fluid channels (not shown) of the diffuser plate 105 . Heat exchanger 117 is in fluid communication with the fluid channels via fluid outlet conduit 119 and fluid inlet conduit 123 . Fluid outlet conduit 119 is connected to diffuser fluid channel inlet 121 and fluid inlet conduit 123 is connected to fluid channel outlet 125 such that excess heat is removed and/or heat is provided to diffuser plate 105 to maintain a predetermined diffuser temperature. The predetermined diffuser temperature may be set to a temperature based on process parameters. The fluid may include a material capable of maintaining a temperature of about 50 degrees Celsius to about 350 degrees Celsius.

氣體分配組件106耦接到射頻（RF）電源127，射頻（RF）電源127用於產生針對處理基板110的電漿。基板支撐組件104大體接地，使得RF功率由RF電源127提供給氣體分配組件106，以提供擴散板105和基板支撐件112之間的電容耦合。當將RF功率供應到擴散板105，在擴散板105和基板支撐件112之間產生電場，使得基板支撐件112和擴散板105之間的處理空間108中存在的氣體原子被離子化並釋放電子。The gas distribution assembly 106 is coupled to a radio frequency (RF) power source 127 for generating a plasma for processing the substrate 110 . Substrate support assembly 104 is generally grounded such that RF power is provided to gas distribution assembly 106 by RF power supply 127 to provide capacitive coupling between diffuser plate 105 and substrate support 112 . When RF power is supplied to the diffuser plate 105, an electric field is generated between the diffuser plate 105 and the substrate support 112, so that gas atoms present in the process space 108 between the substrate support 112 and the diffuser plate 105 are ionized and release electrons. .

基板支撐組件104至少部分地設置在腔室主體102內。基板支撐組件104在處理期間支撐基板110。基板支撐組件104包括基板支撐件112。基板支撐件112具有用於安裝桿118的下表面114和用於支撐基板110的上表面116。桿118將基板支撐組件104耦接到升舉系統(未圖示)，該升舉系統在處理位置(如圖所示)和移送位置之間移動基板支撐組件104，移送位置利於透過腔室主體102的狹縫閥129將基板移送到處理系統100以及將利於透過腔室主體102的狹縫閥129將基板移送離開處理系統100。The substrate support assembly 104 is disposed at least partially within the chamber body 102 . The substrate support assembly 104 supports the substrate 110 during processing. The substrate support assembly 104 includes a substrate support 112 . The substrate support 112 has a lower surface 114 for mounting rods 118 and an upper surface 116 for supporting the substrate 110 . Rod 118 couples substrate support assembly 104 to a lift system (not shown) that moves substrate support assembly 104 between a processing position (as shown) and a transfer position that facilitates penetration through the chamber body The slit valve 129 of chamber body 102 will facilitate the transfer of the substrate to the processing system 100 and the transfer of the substrate out of the processing system 100 through the slit valve 129 of the chamber body 102 .

桿118具有通路（passage）120，通路120用於基板支撐組件104的冷卻氣體供應導管218(如圖2所示)、冷卻氣體回程導管220(如圖2所示)和導熱氣體通路226(如圖2所示)。基板支撐組件104進一步包括冷卻氣體源132，該冷卻氣體源132可操作以使冷卻氣體流到冷卻氣體供應導管218(如圖2所示)和冷卻氣體回程導管220(如圖2所示)，冷卻氣體回程導管220穿過桿118設置。流過基板支撐件112的冷卻氣體可操作以維持預定的支撐件溫度。在可以與本案所述之其他實施例結合的一個實施例中，冷卻氣體可操作以流過熱交換器124以維持預定的支撐件溫度。Rod 118 has passages 120 for cooling gas supply conduit 218 (shown in FIG. 2 ), cooling gas return conduit 220 (shown in FIG. 2 ), and heat transfer gas passage 226 (shown in FIG. Figure 2). The substrate support assembly 104 further includes a cooling gas source 132 operable to flow cooling gas to a cooling gas supply conduit 218 (shown in FIG. 2 ) and a cooling gas return conduit 220 (shown in FIG. 2 ), A cooling gas return conduit 220 is disposed through the rod 118 . The cooling gas flowing through the substrate support 112 is operable to maintain a predetermined support temperature. In one embodiment, which may be combined with other embodiments described herein, cooling gas is operable to flow through heat exchanger 124 to maintain a predetermined support temperature.

與高溫流體的成本相比，冷卻氣體允許基板支撐件112以較低的成本維持預定的支撐件溫度並降低由於超過溫度限制而分解的風險。然而，為了確保冷卻氣體可操作以去除約1kW和約10kW 之間的熱，冷卻通道222(如圖2所示)的通道寬度 232（如圖2所示）、通道高度 234（如圖2所示）和通道長度被設計為具有特定尺寸，使得冷卻氣體將維持預定的支撐件溫度。此外，可調整流動冷卻氣體的操作條件（如冷卻氣體的氣體性質、入口溫度、流速和壓力），使得冷卻氣體將會維持預定的支撐件溫度。The cooling gas allows the substrate support 112 to maintain a predetermined support temperature at a lower cost than the cost of high temperature fluids and reduces the risk of decomposition due to exceeding temperature limits. However, in order to ensure that the cooling gas is operable to remove between about 1 kW and about 10 kW of heat, the cooling channels 222 (shown in FIG. 2 ) have a channel width 232 (as shown in FIG. shown) and channel lengths are dimensioned so that the cooling gas will maintain a predetermined support temperature. In addition, the operating conditions of the flowing cooling gas (such as gas properties, inlet temperature, flow rate and pressure of the cooling gas) can be adjusted such that the cooling gas will maintain a predetermined support temperature.

基板支撐組件104進一步包括導熱氣體源130，其可操作以使導熱氣體流過導熱氣體通路226(如圖2所示)到基板支撐件112中的分配通道228(如圖2所示)和複數個袋部210 (如圖 2 所示)。使導熱氣體流入基板支撐件112改善基板支撐件112與基板110之間的熱傳遞（heat transfer）效率，使得維持基板110的均勻溫度分佈。此外，使導熱氣體流到複數個袋部210(如圖2所示)可操作以在基板110和上表面116之間提供均勻的壓力。基板110和上表面116之間的均勻壓力提供了橫跨基板110的均勻熱傳導（heat conduction）。此外，橫跨基板110施加的均勻壓力防止基板110下垂（sagging）。The substrate support assembly 104 further includes a heat transfer gas source 130 operable to flow heat transfer gas through a heat transfer gas passage 226 (shown in FIG. 2 ) to a distribution channel 228 (shown in FIG. 2 ) in the substrate support 112 and a plurality of A bag portion 210 (as shown in FIG. 2 ). Flowing the heat transfer gas into the substrate support 112 improves the efficiency of heat transfer between the substrate support 112 and the substrate 110 such that a uniform temperature distribution of the substrate 110 is maintained. Additionally, flowing the heat transfer gas to the plurality of pockets 210 (shown in FIG. 2 ) is operable to provide a uniform pressure between the substrate 110 and the upper surface 116 . The uniform pressure between the substrate 110 and the upper surface 116 provides uniform heat conduction across the substrate 110 . Furthermore, the uniform pressure applied across the substrate 110 prevents sagging of the substrate 110 .

處理系統100進一步包括控制器146。控制器146可操作地耦接到處理系統100並且經配置在處理期間監測和控制處理系統100的各個態樣。控制器146可與氣體分配組件106、熱交換器124、冷卻氣體源132和/或導熱氣體源130通訊。控制器146可操作以監測和控制流過基板支撐件112的冷卻氣體的操作條件，使得維持預定的支撐件溫度。控制器146也可操作以監測和控制導熱氣體通過基板支撐件112的流動。The processing system 100 further includes a controller 146 . Controller 146 is operatively coupled to processing system 100 and is configured to monitor and control various aspects of processing system 100 during processing. Controller 146 may be in communication with gas distribution assembly 106 , heat exchanger 124 , cooling gas source 132 , and/or heat transfer gas source 130 . The controller 146 is operable to monitor and control the operating conditions of the cooling gas flowing through the substrate support 112 such that a predetermined support temperature is maintained. The controller 146 is also operable to monitor and control the flow of heat transfer gas through the substrate support 112 .

控制器146可包括中央處理單元（CPU）（未圖示）、記憶體（未圖示）和支援電路（或I/O）（未圖示）。CPU可以是在工業環境中用於控制各種製程和硬體（如馬達和其他硬體）並監測製程（如冷卻氣體與導熱氣體的流速）的任何形式的電腦處理器之一。記憶體（未圖示）連接到CPU，且可以是一個或多個容易取得之記憶體，如隨機存取記憶體（RAM）、唯讀記憶體（ROM）、軟碟、硬碟或任何其他的數位儲存格式，本端的或是遠端的。軟體指令和資料可以經編碼並儲存在記憶體中以指示CPU。支援電路（未圖示）也連接到CPU，以用於以習知方式支援處理器。支援電路可包括習知的快取記憶體、電源供應、時脈電路、輸入/輸出電路、子系統以及類似物。Controller 146 may include a central processing unit (CPU) (not shown), memory (not shown), and support circuitry (or I/O) (not shown). A CPU can be any form of computer processor used in an industrial environment to control various processes and hardware such as motors and other hardware, and to monitor processes such as flow rates of cooling and heat transfer gases. Memory (not shown) is connected to the CPU and can be one or more readily available memories such as random access memory (RAM), read-only memory (ROM), floppy disk, hard disk, or any other digital storage format, local or remote. Software instructions and data can be encoded and stored in memory to instruct the CPU. Support circuitry (not shown) is also connected to the CPU for supporting the processor in a conventional manner. Support circuits may include conventional cache memory, power supplies, clock circuits, input/output circuits, subsystems, and the like.

控制器146可讀的程式（或電腦指令）決定哪些任務可由處理系統100施行。程式可以是控制器146可讀的軟體並且可包括用於監測和控制如預定的支撐件溫度、基板110的固持、冷卻氣體和導熱氣體的分佈以及熱交換器124的指令。Programs (or computer instructions) readable by controller 146 determine which tasks can be performed by processing system 100 . The programming may be software readable by the controller 146 and may include instructions for monitoring and controlling, for example, predetermined support temperatures, holding of the substrate 110 , distribution of cooling and heat transfer gases, and the heat exchanger 124 .

圖2是基板支撐組件104的示意性截面圖。基板支撐組件104包括基板支撐件112和桿118。基板支撐件112包括用於安裝桿118的下表面114和用於支撐基板110的上表面116。FIG. 2 is a schematic cross-sectional view of the substrate support assembly 104 . The substrate support assembly 104 includes a substrate support 112 and a rod 118 . The substrate support 112 includes a lower surface 114 for mounting rods 118 and an upper surface 116 for supporting the substrate 110 .

基板支撐件112包括底板202、頂板204和靜電吸盤(ESC)206。在可以與本案所述之其他實施例結合的一個實施例中，頂板204以以下方式中的至少一個連接於底板202：鑄造、焊接、鍛造、熱等靜壓和燒結。在可以與本案所述之其他實施例結合的一個實施例中，頂板204以以下方式中的至少一個連接於ESC 206：鑄造、焊接、鍛造、熱等靜壓和燒結。基板支撐件112可包括但不限於鈦或鋁材料或其組合。The substrate support 112 includes a bottom plate 202 , a top plate 204 and an electrostatic chuck (ESC) 206 . In one embodiment, which may be combined with other embodiments described herein, the top plate 204 is joined to the bottom plate 202 by at least one of: casting, welding, forging, hot isostatic pressing, and sintering. In one embodiment, which may be combined with other embodiments described herein, the top plate 204 is attached to the ESC 206 by at least one of: casting, welding, forging, hot isostatic pressing, and sintering. The substrate support 112 may include, but is not limited to, titanium or aluminum materials or combinations thereof.

ESC 206包括上表面116。如圖2所示，上表面116可包括複數個凸起的支撐件208以支撐基板110。複數個凸起的支撐件208、上表面116和基板110界定複數個袋部210。在可以與本案描述的其他實施例結合的一個實施例中，ESC 206包括設置在其中的吸附電極。吸附電極可經配置為單極或雙極電極，或其他合適的佈置。吸附電極提供DC電源以將基板110靜電地固定於基板支撐件112的上表面116。在一個實施例中，ESC 206由陶瓷材料製成，如氧化鋁(Al 2O 3)、氮化鋁(AlN)或其他合適的材料。或者，ESC 206可由聚合物製成，如聚酰亞胺、聚醚醚酮和聚芳醚酮。 ESC 206 includes upper surface 116 . As shown in FIG. 2 , the upper surface 116 may include a plurality of raised supports 208 to support the substrate 110 . The plurality of raised supports 208 , the upper surface 116 and the base plate 110 define a plurality of pockets 210 . In one embodiment, which can be combined with other embodiments described herein, the ESC 206 includes adsorption electrodes disposed therein. Adsorption electrodes may be configured as monopolar or bipolar electrodes, or other suitable arrangements. The adsorption electrodes provide DC power to electrostatically fix the substrate 110 to the upper surface 116 of the substrate support 112 . In one embodiment, ESC 206 is made of a ceramic material, such as aluminum oxide (Al 2 O 3 ), aluminum nitride (AlN), or other suitable material. Alternatively, ESC 206 may be made of polymers such as polyimide, polyetheretherketone, and polyaryletherketone.

基板支撐組件104進一步包括溫度控制系統216。溫度控制系統216包括一個或多個電阻加熱器214、冷卻通道222、冷卻氣體供應導管218、冷卻氣體回程導管220和冷卻氣體源132。溫度控制系統216可操作以維持基板支撐件112的預定的支撐件溫度。當基板110被基板支撐件112固持時，預定的支撐件溫度直接影響基板110的溫度。預定的支撐件溫度在約攝氏50度和約攝氏350度之間。The substrate support assembly 104 further includes a temperature control system 216 . Temperature control system 216 includes one or more resistive heaters 214 , cooling channels 222 , cooling gas supply conduit 218 , cooling gas return conduit 220 , and cooling gas source 132 . The temperature control system 216 is operable to maintain a predetermined support temperature of the substrate support 112 . The predetermined support temperature directly affects the temperature of the substrate 110 when the substrate 110 is held by the substrate support 112 . The predetermined support temperature is between about 50 degrees Celsius and about 350 degrees Celsius.

一個或多個電阻加熱器214嵌入頂板204中。電阻加熱器214用於將ESC 206的溫度升高到適合處理設置在上表面116上的基板110的預定的支撐件溫度。電阻加熱器214經由頂板204耦接到加熱器電源217。加熱器電源217可向電阻加熱器214提供500瓦或更多的功率。加熱器電源217可與控制器146通訊以控制加熱器電源217的操作。在一個實施例中，電阻加熱器214包括複數個橫向分離的加熱區，其中控制器使得電阻加熱器214的至少一個區域相對於位於一個或多個其他區域中的電阻加熱器214被優先加熱。例如，電阻加熱器214可以將預定的支撐件溫度維持在約攝氏50度至約攝氏350度。One or more resistive heaters 214 are embedded in top plate 204 . The resistive heater 214 is used to raise the temperature of the ESC 206 to a predetermined support temperature suitable for processing the substrate 110 disposed on the upper surface 116 . Resistive heater 214 is coupled to heater power supply 217 via top plate 204 . Heater power supply 217 may provide 500 watts or more of power to resistive heater 214 . The heater power supply 217 may communicate with the controller 146 to control the operation of the heater power supply 217 . In one embodiment, resistive heater 214 includes a plurality of laterally separated heating zones, wherein the controller causes at least one zone of resistive heater 214 to be preferentially heated relative to resistive heater 214 located in one or more other zones. For example, resistive heater 214 may maintain a predetermined support temperature at about 50 degrees Celsius to about 350 degrees Celsius.

冷卻通道222穿過頂板204設置。冷卻通道222包括通道寬度232和通道高度234。通道寬度232和通道高度234在約0.5英吋和約2英吋之間。儘管圖2繪示具有矩形截面的冷卻通道222，但是冷卻通道222可具有任何合適的截面，例如圓形、正方形或三角形截面。冷卻通道222一端與冷卻氣體供應導管218流體耦接，另一端與冷卻氣體回程導管220流體連接。冷卻氣體供應導管218和冷卻氣體回程導管220穿過桿118的通路120設置。Cooling channels 222 are provided through the top plate 204 . Cooling channel 222 includes channel width 232 and channel height 234 . Channel width 232 and channel height 234 are between about 0.5 inches and about 2 inches. Although FIG. 2 illustrates cooling channels 222 having a rectangular cross-section, cooling channels 222 may have any suitable cross-section, such as circular, square, or triangular cross-sections. One end of the cooling channel 222 is fluidly coupled to the cooling gas supply conduit 218 , and the other end is fluidly connected to the cooling gas return conduit 220 . Cooling gas supply conduit 218 and cooling gas return conduit 220 are disposed through passage 120 of rod 118 .

冷卻氣體供應導管218與冷卻氣體源132流體連通。冷卻氣體源132可操作以使冷卻氣體流動。冷卻氣體包括但不限於氮氣(N 2)、乾燥空氣或其組合。因此，冷卻氣體將移除熱量而沒有分解的風險，從而改善處理系統100的效率。 Cooling gas supply conduit 218 is in fluid communication with cooling gas source 132 . Cooling gas source 132 is operable to flow cooling gas. Cooling gases include, but are not limited to, nitrogen ( N2 ), dry air, or combinations thereof. Thus, the cooling gas will remove heat without risk of decomposition, improving the efficiency of the treatment system 100 .

在可以與本文所述之其他實施例結合的一個實施例中，熱交換器124經由導管出口238與導管入口236而連接至冷卻通道222，導管入口236耦接至冷卻氣體供應導管218，導管出口238耦接至冷卻氣體回程導管220。熱交換器124使來自冷卻氣體源132的冷卻氣體以單向流循環通過冷卻通道222，使得從基板支撐件112去除多餘的熱以維持預定的支撐件溫度。預定的支撐件溫度可以被設置為基於製程參數的溫度，使得基板110的均勻溫度分佈在處理期間保持獨立於電漿的強度。藉由維持預定的支撐件溫度，基板110不會過熱。In one embodiment, which may be combined with other embodiments described herein, the heat exchanger 124 is connected to the cooling passage 222 via a conduit outlet 238 coupled to the cooling gas supply conduit 218 and a conduit inlet 236 coupled to the cooling gas supply conduit 218, the conduit outlet 238 is coupled to the cooling gas return conduit 220 . Heat exchanger 124 circulates cooling gas from cooling gas source 132 through cooling channel 222 in a unidirectional flow such that excess heat is removed from substrate support 112 to maintain a predetermined support temperature. The predetermined support temperature may be set to a temperature based on process parameters such that a uniform temperature profile of the substrate 110 remains independent of the intensity of the plasma during processing. By maintaining a predetermined support temperature, the substrate 110 does not overheat.

在可以與本文所述之其他實施例結合的一個實施例中，溫度控制系統216與控制器146通訊。控制器146可操作以決定基板支撐件112的溫度。例如，控制器146可耦接到設置在基板支撐件112中的熱電偶和耦接到熱交換器124。耦接到熱電偶和熱交換器124的控制器146可操作以監測和控制進入冷卻通道222的冷卻氣體的操作條件。例如，控制器146可操作以控制來自冷卻氣體源132的冷卻氣體的流速以維持預定的支撐件溫度。In one embodiment, which can be combined with other embodiments described herein, the temperature control system 216 is in communication with the controller 146 . The controller 146 is operable to determine the temperature of the substrate support 112 . For example, controller 146 may be coupled to thermocouples disposed in substrate support 112 and to heat exchanger 124 . A controller 146 coupled to the thermocouple and heat exchanger 124 is operable to monitor and control the operating conditions of the cooling gas entering the cooling passage 222 . For example, the controller 146 is operable to control the flow rate of cooling gas from the cooling gas source 132 to maintain a predetermined support temperature.

在可以與本文所述之其他實施例結合的另一實施例中，冷卻氣體源132可操作以使冷卻氣體連續地流至冷卻通道222。冷卻氣體可經由冷卻氣體回程導管220離開冷卻通道222並從處理系統100排出。耦接到熱電偶的控制器146可操作以監測和控制從冷卻氣體源132進入冷卻通道222的冷卻氣體的操作條件。例如，控制器146可操作以控制來自冷卻氣體源132的冷卻氣體的流速。控制器146可操作以監測和控制冷卻氣體的流，使得維持預定的支撐件溫度。In another embodiment, which may be combined with other embodiments described herein, the cooling gas source 132 is operable to continuously flow cooling gas to the cooling channel 222 . Cooling gas may exit cooling channel 222 and be exhausted from processing system 100 via cooling gas return conduit 220 . The controller 146 coupled to the thermocouple is operable to monitor and control the operating conditions of the cooling gas entering the cooling channel 222 from the cooling gas source 132 . For example, controller 146 is operable to control the flow rate of cooling gas from cooling gas source 132 . Controller 146 is operable to monitor and control the flow of cooling gas such that a predetermined support temperature is maintained.

基板支撐組件104進一步包括導熱氣體分配系統224。導熱氣體分配系統224包括導熱氣體源130、導熱氣體通路226、分配通道228和複數個氣體通道230。導熱氣體分配系統224可操作以向複數個袋部210提供導熱氣體。The substrate support assembly 104 further includes a heat transfer gas distribution system 224 . The heat transfer gas distribution system 224 includes a heat transfer gas source 130 , a heat transfer gas passage 226 , a distribution channel 228 , and a plurality of gas channels 230 . The heat transfer gas distribution system 224 is operable to provide heat transfer gas to the plurality of pockets 210 .

複數個氣體通道230設置穿過頂板204和ESC 206。複數個氣體通道230暴露於基板支撐件112的上表面116。複數個氣體通道230可操作以將複數個袋部210連接到分配通道228。分配通道228由頂板204的底表面212和底板202界定。冷卻通道222設置在一個或多個電阻加熱器214和分配通道228之間。藉由使分配通道228穿過底板202設置，基板支撐件112的可製造性得到改善，因為底板202可以耦接到頂板204以形成分配通道228。分配通道228允許流過分配通道228的導熱氣體在橫跨底板202的寬度上均勻分佈，使得導熱氣體以均勻分佈的方式流過複數個氣體通道230。分配通道228流體耦接到導熱氣體通路226。導熱氣體通路226耦接到導熱氣體源130。導熱氣體源130可操作以使導熱氣體流動。導熱氣體包括但不限於氦氣(He)、氫氣(H 2)或它們的組合。在可以與本案所述之其他實施例結合的一個實施例中，泵(未圖示)連接到導熱氣體通路226以控制將導熱氣體輸送到分配通道228的壓力。 A plurality of gas channels 230 are disposed through the top plate 204 and the ESC 206 . A plurality of gas channels 230 are exposed on the upper surface 116 of the substrate support 112 . Plurality of gas channels 230 is operable to connect plurality of pouches 210 to distribution channel 228 . The distribution channel 228 is bounded by the bottom surface 212 of the top plate 204 and the bottom plate 202 . Cooling channel 222 is disposed between one or more resistive heaters 214 and distribution channel 228 . By having the distribution channel 228 disposed through the bottom plate 202 , the manufacturability of the substrate support 112 is improved because the bottom plate 202 can be coupled to the top plate 204 to form the distribution channel 228 . The distribution channels 228 allow the heat transfer gas flowing through the distribution channels 228 to be evenly distributed across the width of the base plate 202 such that the heat transfer gas flows through the plurality of gas channels 230 in an evenly distributed manner. Distribution channel 228 is fluidly coupled to heat transfer gas passage 226 . Thermal transfer gas passage 226 is coupled to thermal transfer gas source 130 . The heat transfer gas source 130 is operable to flow a heat transfer gas. Heat transfer gases include, but are not limited to, helium (He), hydrogen (H 2 ), or combinations thereof. In one embodiment, which can be combined with other embodiments described herein, a pump (not shown) is connected to thermal transfer gas passage 226 to control the pressure at which thermal transfer gas is delivered to distribution channel 228 .

導熱氣體可操作以從導熱氣體源130經由導熱氣體通路226流到分配通道，流過複數個氣體通道230，並且流到複數個袋部210。導熱氣體流向複數個袋部210，使得導熱氣體設置在基板110和ESC 206之間。導熱氣體將會改善基板支撐件112與基板110之間的熱傳遞效率，使得維持基板110的均勻溫度分佈。此外，複數個袋部210中的導熱氣體在基板110和上表面116之間提供均勻的壓力。基板110和上表面116之間的均勻壓力提供了橫跨基板110的均勻熱傳導（heat conduction）。The heat transfer gas is operable to flow from the heat transfer gas source 130 to the distribution channel via the heat transfer gas passage 226 , through the plurality of gas channels 230 , and to the plurality of pockets 210 . The heat transfer gas flows to the plurality of pockets 210 such that the heat transfer gas is disposed between the substrate 110 and the ESC 206 . The heat transfer gas will improve the heat transfer efficiency between the substrate support 112 and the substrate 110 such that a uniform temperature distribution of the substrate 110 is maintained. Additionally, the heat transfer gas in the plurality of pockets 210 provides a uniform pressure between the substrate 110 and the upper surface 116 . The uniform pressure between the substrate 110 and the upper surface 116 provides uniform heat conduction across the substrate 110 .

在可以與本文所述之其他實施例結合的一個實施例中，導熱氣體分配系統224與控制器146通訊。控制器146可操作以監測和控制導熱氣體流向複數個袋部210，使得維持預定的支撐件溫度。例如，控制器146可控制由導熱氣體源130提供的導熱氣體的流速和體積。控制器146可操作以增加提供給複數個袋部210的導熱氣體的壓力，以改善到基板110的熱傳導。In one embodiment, which can be combined with other embodiments described herein, the heat transfer gas distribution system 224 is in communication with the controller 146 . The controller 146 is operable to monitor and control the flow of heat transfer gas to the plurality of pockets 210 such that a predetermined support temperature is maintained. For example, controller 146 may control the flow rate and volume of heat transfer gas provided by heat transfer gas source 130 . The controller 146 is operable to increase the pressure of the heat transfer gas provided to the plurality of pockets 210 to improve heat transfer to the substrate 110 .

圖3是基板支撐件112的頂板204的冷卻通道222的示意性頂視圖。頂板204具有設置在其中的冷卻通道222。在可以與本文所述之其他實施例結合的一個實施例中，多於一個的冷卻通道222設置在頂板204中。冷卻通道222包括冷卻通道入口302。冷卻通道入口302流體耦接到冷卻氣體供應導管218(如圖2所示)。冷卻通道入口302可操作以接收來自冷卻氣體源132的冷卻氣體，冷卻氣體源132與冷卻氣體供應導管218流體連通。冷卻通道入口302處的冷卻氣體具有入口溫度，即冷卻通道入口302處在約攝氏20度和約攝氏100度之間的冷卻氣體的溫度。冷卻通道222進一步包括冷卻通道出口304。冷卻通道出口304流體耦接到冷卻氣體回程導管220(如圖2所示)。冷卻通道出口可操作以在循環通過冷卻通道222之後使冷卻氣體返回。冷卻通道出口304處的冷卻氣體具有出口溫度，即冷卻通道出口304處在約攝氏50度和約攝氏350度之間的冷卻氣體的溫度。在可以與本文所述之其他實施例結合的一個實施例中，熱交換器124與冷卻通道入口302和冷卻通道出口304流體連通。熱交換器124使冷卻氣體以單向流循環通過冷卻通道222，使得從基板支撐件112去除多餘的熱以維持預定的支撐件溫度。流過冷卻通道222的冷卻氣體可操作以去除約1kW和約10kW之間的熱。FIG. 3 is a schematic top view of the cooling channels 222 of the top plate 204 of the substrate support 112 . The top plate 204 has cooling channels 222 disposed therein. In one embodiment, which may be combined with other embodiments described herein, more than one cooling channel 222 is provided in the top plate 204 . Cooling channel 222 includes cooling channel inlet 302 . Cooling channel inlet 302 is fluidly coupled to cooling gas supply conduit 218 (shown in FIG. 2 ). The cooling channel inlet 302 is operable to receive cooling gas from a cooling gas source 132 in fluid communication with the cooling gas supply conduit 218 . The cooling gas at the cooling channel inlet 302 has an inlet temperature, ie, the temperature of the cooling gas at the cooling channel inlet 302 between about 20 degrees Celsius and about 100 degrees Celsius. Cooling channel 222 further includes cooling channel outlet 304 . Cooling channel outlet 304 is fluidly coupled to cooling gas return conduit 220 (shown in FIG. 2 ). The cooling channel outlet is operable to return the cooling gas after circulating through the cooling channel 222 . The cooling gas at the cooling channel outlet 304 has an outlet temperature, ie, the temperature of the cooling gas at the cooling channel outlet 304 between about 50 degrees Celsius and about 350 degrees Celsius. In one embodiment, which may be combined with other embodiments described herein, heat exchanger 124 is in fluid communication with cooling channel inlet 302 and cooling channel outlet 304 . The heat exchanger 124 circulates cooling gas in a unidirectional flow through the cooling channel 222 such that excess heat is removed from the substrate support 112 to maintain a predetermined support temperature. Cooling gas flowing through cooling channel 222 is operable to remove between about 1 kW and about 10 kW of heat.

冷卻通道222包括通道寬度232。通道寬度232在約0.5英吋和約2英吋之間。由冷卻通道入口302和冷卻通道出口304之間的冷卻通道222的距離界定的通道長度在約1公尺和約10公尺之間。冷卻通道222經配置使得流過冷卻通道入口302的冷卻氣體具有比流過冷卻通道出口304的冷卻氣體低的溫度。基板支撐件112的頂板204部分的溫度將近似為直接圍繞頂板204的部分之冷卻通道222中的冷卻氣體的平均溫度。因此，頂板204的溫度維持實質均勻。冷卻通道222不限於圖3所示的配置，並且可以以任何模式配置，使得頂板204的溫度維持實質均勻。Cooling channel 222 includes channel width 232 . Channel width 232 is between about 0.5 inches and about 2 inches. The channel length defined by the distance of cooling channel 222 between cooling channel inlet 302 and cooling channel outlet 304 is between about 1 meter and about 10 meters. Cooling channel 222 is configured such that cooling gas flowing through cooling channel inlet 302 has a lower temperature than cooling gas flowing through cooling channel outlet 304 . The temperature of the top plate 204 portion of the substrate support 112 will approximate the average temperature of the cooling gas in the cooling channels 222 directly surrounding the portion of the top plate 204 . Therefore, the temperature of the top plate 204 remains substantially uniform. The cooling channels 222 are not limited to the configuration shown in FIG. 3 and may be configured in any pattern such that the temperature of the top plate 204 is maintained substantially uniform.

圖4是用於控制基板支撐件112的溫度的方法400的流程圖。為了便於解釋，方法400是參照處理系統100的基板支撐件112來描述的，如圖1和圖2所示。方法400可用於其他類型的電漿處理系統中，例如電漿處理腔室、退火腔室、蝕刻腔室、物理氣相沉積腔室、化學氣相沉積腔室和離子注入腔室等，以及其他能夠維持基板支撐件的預定的支撐件溫度在所需約攝氏50度至約攝氏350度之間的溫度之系統。與處理系統100通訊的控制器146控制和監測方法400的操作，使得維持預定的支撐件溫度。FIG. 4 is a flowchart of a method 400 for controlling the temperature of the substrate support 112 . For ease of explanation, method 400 is described with reference to substrate support 112 of processing system 100 , as shown in FIGS. 1 and 2 . The method 400 can be used in other types of plasma processing systems, such as plasma processing chambers, annealing chambers, etching chambers, physical vapor deposition chambers, chemical vapor deposition chambers, and ion implantation chambers, among others, among others. A system capable of maintaining a predetermined support temperature of a substrate support at a desired temperature between about 50 degrees Celsius and about 350 degrees Celsius. Controller 146 in communication with processing system 100 controls and monitors the operation of method 400 such that a predetermined support temperature is maintained.

在操作401，基板110被固持在基板支撐組件104的基板支撐件112上。基板110被固持在基板支撐件112的靜電吸盤(ESC)206上。將直流電源提供給設置在ESC 206中的吸附電極，以將基板110靜電固定到上表面 116 的複數個凸起的支撐件208。At operation 401 , a substrate 110 is held on a substrate support 112 of the substrate support assembly 104 . The substrate 110 is held on an electrostatic chuck (ESC) 206 of the substrate support 112 . DC power is supplied to the adsorption electrodes provided in the ESC 206 to electrostatically fix the substrate 110 to the plurality of raised supports 208 of the upper surface 116 .

在操作402，將基板支撐件112加熱到預定的支撐件溫度。預定的支撐件溫度在約攝氏50度和約攝氏350度之間。設置在基板支撐件112的頂板204中的一個或多個電阻加熱器214將基板支撐件112加熱到預定的支撐件溫度。控制器146指示加熱器電源217向電阻加熱器214提供500瓦或更多的功率，使得達到預定的支撐件溫度。At operation 402, the substrate support 112 is heated to a predetermined support temperature. The predetermined support temperature is between about 50 degrees Celsius and about 350 degrees Celsius. One or more resistive heaters 214 disposed in the top plate 204 of the substrate support 112 heat the substrate support 112 to a predetermined support temperature. Controller 146 instructs heater power supply 217 to provide 500 watts or more of power to resistive heater 214 such that a predetermined support temperature is achieved.

在操作403，處理基板110。該製程的一個實例是電漿增強化學氣相沉積（PECVD）製程。前驅物氣體的均勻預定分佈流過擴散板105並進入處理系統100的處理空間108。前驅物氣體被來自基板支撐件112的輻射熱加熱。當將RF功率供應到擴散板105時，在擴散板105和基板支撐件112之間產生電場，使得基板支撐件112和擴散板105之間的處理空間108中存在的氣體原子被賦能（如激發）而成為電漿。激發的前驅物氣體反應以在基板110的表面上形成材料膜。由於處理期間電漿的強度，熱將從電漿中消散。In operation 403, the substrate 110 is processed. An example of such a process is a plasma enhanced chemical vapor deposition (PECVD) process. A uniform predetermined distribution of precursor gases flows through diffuser plate 105 and into processing volume 108 of processing system 100 . The precursor gas is heated by radiant heat from the substrate support 112 . When RF power is supplied to the diffuser plate 105, an electric field is generated between the diffuser plate 105 and the substrate support 112 such that the gas atoms present in the process space 108 between the substrate support 112 and the diffuser plate 105 are energized (as excitation) and become plasma. The excited precursor gas reacts to form a material film on the surface of the substrate 110 . Due to the intensity of the plasma during processing, heat will be dissipated from the plasma.

在操作404，基板110維持在預定的支撐件溫度。藉由使冷卻氣體流入基板支撐件112的冷卻通道222中來維持溫度。操作404可與操作403同時（concurrently）施行，使得冷卻氣體在操作403期間在基板支撐件112中維持預定的支撐件溫度。冷卻氣體從冷卻氣體源132流到冷卻氣體供應導管218，流經冷卻氣體供應導管218到達冷卻通道222的冷卻通道入口(如圖3所示)。由於電漿消散的熱被傳遞到冷卻氣體，冷卻氣體流過冷卻通道222以維持預定的支撐件溫度。冷卻氣體經由冷卻通道出口304流到冷卻氣體回程導管220。將預定的支撐件溫度設置為一溫度，使得基板110的均勻溫度分佈在處理期間保持獨立於電漿的強度。藉由維持預定的支撐件溫度，基板110不會過熱。At operation 404, the substrate 110 is maintained at a predetermined support temperature. The temperature is maintained by flowing cooling gas into the cooling channels 222 of the substrate support 112 . Operation 404 may be performed concurrently with operation 403 such that the cooling gas maintains a predetermined support temperature in the substrate support 112 during operation 403 . Cooling gas flows from cooling gas source 132 to cooling gas supply conduit 218 , through cooling gas supply conduit 218 to a cooling channel inlet of cooling channel 222 (shown in FIG. 3 ). As the heat dissipated by the plasma is transferred to the cooling gas, the cooling gas flows through the cooling channels 222 to maintain a predetermined support temperature. The cooling gas flows to the cooling gas return conduit 220 via the cooling channel outlet 304 . The predetermined support temperature is set to a temperature such that a uniform temperature distribution of the substrate 110 remains independent of the intensity of the plasma during processing. By maintaining a predetermined support temperature, the substrate 110 does not overheat.

當使用熱交換器124時，冷卻氣體流過熱交換器124以維持預定的支撐件溫度。熱交換器124使來自冷卻氣體源132的冷卻氣體以單向流循環通過冷卻通道222，使得從基板支撐件112去除多餘的熱以維持預定的支撐件溫度。在可以與本文所述之其他實施例結合的另一實施例中，冷卻氣體從冷卻氣體源132連續地流至冷卻通道222。當冷卻氣體離開冷卻氣體回程導管220時，冷卻氣體從處理系統100中排出。When the heat exchanger 124 is used, cooling gas flows through the heat exchanger 124 to maintain a predetermined support temperature. Heat exchanger 124 circulates cooling gas from cooling gas source 132 through cooling channel 222 in a unidirectional flow such that excess heat is removed from substrate support 112 to maintain a predetermined support temperature. In another embodiment, which may be combined with other embodiments described herein, the cooling gas flows continuously from the cooling gas source 132 to the cooling channel 222 . The cooling gas is exhausted from the processing system 100 as it exits the cooling gas return conduit 220 .

冷卻氣體流過冷卻通道222，使得有效地去除來自電漿的多餘熱量，以防止基板110過熱。冷卻氣體根據在操作404中使用的允許冷卻氣體去除必要熱量之操作條件來流動。例如，流過冷卻通道222的冷卻氣體可操作以去除約1至約10kW之間的熱。The cooling gas flows through the cooling channels 222 such that excess heat from the plasma is effectively removed to prevent the substrate 110 from overheating. The cooling gas flows according to the operating conditions used in operation 404 that allow the cooling gas to remove the necessary heat. For example, the cooling gas flowing through the cooling channel 222 is operable to remove between about 1 to about 10 kW of heat.

操作條件包括冷卻氣體的氣體性質、入口溫度、流速和壓力。根據需要去除的熱量，來決定操作條件。操作條件可由控制器146決定。冷卻氣體的氣體性質確保將多餘的熱去除，且冷卻氣體可以流動而不分解。冷卻氣體的氣體性質包括比熱（Cp）、熱導率（k）和動態黏度（μ）。冷卻通道入口302處的入口溫度在約攝氏20度和約攝氏100度之間。通過冷卻通道222的冷卻氣體的流速在約500每分鐘標準升(SLM)和約2000SLM之間。冷卻氣體的壓力在約1個標準大氣壓和約3個標準大氣壓之間。控制器146與基板支撐件112和熱交換器124通訊。控制器146可操作以監測和控制進入冷卻通道222的冷卻氣體的操作條件。例如，控制器146可以控制提供給冷卻通道222的冷卻氣體的入口溫度、流速和壓力，使得維持預定的支撐件溫度。Operating conditions include gas properties, inlet temperature, flow rate and pressure of the cooling gas. Depending on the amount of heat that needs to be removed, the operating conditions are determined. Operating conditions may be determined by controller 146 . The gaseous nature of the cooling gas ensures that excess heat is removed and the cooling gas can flow without decomposition. The gas properties of the cooling gas include specific heat (Cp), thermal conductivity (k) and dynamic viscosity (μ). The inlet temperature at the cooling channel inlet 302 is between about 20 degrees Celsius and about 100 degrees Celsius. The flow rate of cooling gas through cooling passage 222 is between about 500 standard liters per minute (SLM) and about 2000 SLM. The pressure of the cooling gas is between about 1 atmosphere and about 3 atmospheres. Controller 146 is in communication with substrate support 112 and heat exchanger 124 . The controller 146 is operable to monitor and control the operating conditions of the cooling gas entering the cooling passage 222 . For example, the controller 146 may control the inlet temperature, flow rate, and pressure of cooling gas provided to the cooling channel 222 such that a predetermined support temperature is maintained.

在操作403和404期間，導熱氣體可流向複數個袋部，以改善基板支撐件112和基板110之間的熱傳遞效率，使得保持基板110的均勻溫度分佈。此外，在操作403和404中，導熱氣體流向複數個袋部210，以在基板110和上表面116之間提供均勻的壓力。基板110和上表面116之間的均勻壓力提供了橫跨基板110的均勻熱傳導（heat conduction）。During operations 403 and 404 , heat transfer gas may flow to the plurality of pockets to improve heat transfer efficiency between the substrate support 112 and the substrate 110 such that a uniform temperature distribution of the substrate 110 is maintained. Additionally, in operations 403 and 404 , heat transfer gas is flowed to plurality of pockets 210 to provide uniform pressure between substrate 110 and upper surface 116 . The uniform pressure between the substrate 110 and the upper surface 116 provides uniform heat conduction across the substrate 110 .

在操作405，從基板支撐件112移除基板110。在可以與本文所述之其他實施例結合的一個實施例中，經由提供給基板110的升離氣體（lift-off gas）來去除基板110。在可以與本文所述之其他實施例結合的另一實施例中， 110經由移送機器人移除基板。At operation 405 , the substrate 110 is removed from the substrate support 112 . In one embodiment, which may be combined with other embodiments described herein, the substrate 110 is removed via a lift-off gas provided to the substrate 110 . In another embodiment, which can be combined with other embodiments described herein, 110 removes the substrate via a transfer robot.

綜而言之，本案描述了用於控制基板支撐件的溫度之基板支撐組件和方法。基板支撐件系統包括通過冷卻通道的單向冷卻氣體流，冷卻通道設置在基板支撐件的頂板中。冷卻氣體維持預定的支撐件溫度。設計冷卻通道以確保冷卻氣體有效率地流過基板支撐件。與高溫流體的成本相比，冷卻氣體允許基板支撐件以較低的成本維持預定的支撐件溫度並降低由於超過溫度限制而分解的風險。然而，為了確保冷卻氣體可操作以去除約1kW和約10kW 之間的熱，冷卻通道的通道、通道高度和通道長度被設計為具有特定尺寸，使得冷卻氣體將維持預定的支撐件溫度。此外，可調整流動冷卻氣體的操作條件（如冷卻氣體的氣體性質、入口溫度、流速和壓力），使得冷卻氣體將會維持預定的支撐件溫度。耦接到基板支撐件系統的控制器監測和控制冷卻氣體的操作條件以確保維持預定的支撐件溫度。In summary, the present application describes substrate support assemblies and methods for controlling the temperature of a substrate support. The substrate support system includes a unidirectional flow of cooling gas through cooling channels provided in the top plate of the substrate support. The cooling gas maintains a predetermined support temperature. Cooling channels are designed to ensure efficient flow of cooling gas through the substrate support. The cooling gas allows the substrate support to maintain a predetermined support temperature at a lower cost than the cost of high temperature fluids and reduces the risk of decomposition due to exceeding temperature limits. However, to ensure that the cooling gas is operable to remove between about 1 kW and about 10 kW of heat, the channels, channel heights and channel lengths of the cooling channels are dimensioned such that the cooling gas will maintain a predetermined support temperature. In addition, the operating conditions of the flowing cooling gas (such as gas properties, inlet temperature, flow rate and pressure of the cooling gas) can be adjusted such that the cooling gas will maintain a predetermined support temperature. A controller coupled to the substrate support system monitors and controls the operating conditions of the cooling gas to ensure that a predetermined support temperature is maintained.

雖然前面所述係針對本揭示案的實施例，但在不背離本揭示案的基本範圍下，可設計本揭示案的其他與進一步的實施例，且本揭示案的範圍由以下專利申請範圍所界定。Although the foregoing description is directed to embodiments of the disclosure, other and further embodiments of the disclosure can be devised without departing from the basic scope of the disclosure, and the scope of the disclosure is defined by the following claims defined.

100:處理系統 102:腔室主體 103:背板 104:基板支撐組件 105:擴散板 106:氣體分配組件 107:氣體入口通路 108:處理空間 109:歧管 110:基板 111:氣體源 112:基板支撐件 113:氣室 114:下表面 115:底表面 116:上表面 117:熱交換器 118:桿 119:流體出口導管 120:通路 121:進口 123:流體入口導管 124:熱交換器 125:出口 127:電源 129:狹縫閥 130:導熱氣體源 132:冷卻氣體源 146:控制器 202:底板 204:頂板 206:ESC 208:凸起的支撐件 210:袋部 212:底表面 214:電阻加熱器 216:溫度控制系統 217:加熱器電源 218:冷卻氣體供應導管 220:冷卻氣體回程導管 222:冷卻通道 224:導熱氣體分配系統 226:導熱氣體通路 228:分配通道 230:氣體通道 232:通道寬度 234:通道高度 236:導管入口 238:導管出口 302:冷卻通道入口 304:冷卻通道出口 400:方法 401:操作 402:操作 403:操作 404:操作 405:操作 100: Processing system 102: Chamber body 103: Backplane 104: Substrate support assembly 105: Diffusion plate 106: Gas distribution components 107: Gas inlet passage 108: Processing space 109: Manifold 110: Substrate 111: gas source 112: substrate support 113: air chamber 114: lower surface 115: bottom surface 116: upper surface 117: heat exchanger 118: Rod 119: Fluid outlet conduit 120: Passage 121:Import 123: Fluid inlet conduit 124: heat exchanger 125: export 127: power supply 129: Slit valve 130: heat transfer gas source 132: cooling gas source 146: Controller 202: bottom plate 204: top plate 206:ESC 208: Raised support 210: bag department 212: bottom surface 214: resistance heater 216: Temperature control system 217: heater power supply 218: Cooling gas supply duct 220: Cooling gas return conduit 222: cooling channel 224: Heat transfer gas distribution system 226: Heat conduction gas passage 228: Allocation channel 230: gas channel 232: channel width 234: channel height 236: Conduit entrance 238: Conduit outlet 302: Cooling channel entrance 304: cooling channel exit 400: method 401: Operation 402: operation 403: operation 404: Operation 405: operation

本揭示案之特徵已簡要概述於前，並在以下有更詳盡之討論，可以藉由參考所附圖式中繪示之本案實施例以作瞭解。然而，值得注意的是，所附圖式只繪示了示範實施例且不會視為其範圍之限制，且本揭示案可允許其他等效之實施例。The features of the disclosure have been briefly summarized above and discussed in more detail below, which can be understood by reference to the embodiments of the disclosure which are illustrated in the accompanying drawings. It is to be noted, however, that the appended drawings illustrate exemplary embodiments only and are not to be considered limiting of its scope, for the disclosure may admit to other equally effective embodiments.

圖1是根據實施例的具有基板支撐組件的處理系統的示意性截面圖。1 is a schematic cross-sectional view of a processing system having a substrate support assembly according to an embodiment.

圖2是根據實施例的基板支撐組件的示意性截面圖。2 is a schematic cross-sectional view of a substrate support assembly according to an embodiment.

圖3是根據實施例的基板支撐件的頂板的冷卻通道的示意性頂視圖。3 is a schematic top view of cooling channels of a top plate of a substrate support according to an embodiment.

圖4是根據實施例的用於控制基板支撐件的溫度的方法的流程圖。4 is a flowchart of a method for controlling the temperature of a substrate support according to an embodiment.

為便於理解，在可能的情況下，使用相同的數字編號代表圖示中相同的元件。可以預期的是，一個實施例中的元件與特徵可有利地用於其他實施例中而無需贅述。For ease of understanding, where possible, the same numerals are used to represent the same elements in the drawings. It is contemplated that elements and features of one embodiment may be beneficially utilized on other embodiments without further recitation.

國內寄存資訊(請依寄存機構、日期、號碼順序註記) 無 國外寄存資訊(請依寄存國家、機構、日期、號碼順序註記) 無 Domestic deposit information (please note in order of depositor, date, and number) none Overseas storage information (please note in order of storage country, institution, date, and number) none

110:基板 110: Substrate

112:基板支撐件 112: substrate support

114:下表面 114: lower surface

116:上表面 116: upper surface

118:桿 118: Rod

120:通路 120: Passage

124:熱交換器 124: heat exchanger

130:導熱氣體源 130: heat transfer gas source

132:冷卻氣體源 132: cooling gas source

146:控制器 146: Controller

202:底板 202: bottom plate

204:頂板 204: top plate

206:ESC 206:ESC

208:凸起的支撐件 208: Raised support

210:袋部 210: bag department

212:底表面 212: bottom surface

214:電阻加熱器 214: resistance heater

216:溫度控制系統 216: Temperature control system

217:加熱器電源 217: heater power supply

218:冷卻氣體供應導管 218: Cooling gas supply duct

220:冷卻氣體回程導管 220: Cooling gas return conduit

222:冷卻通道 222: cooling channel

224:導熱氣體分配系統 224: Heat transfer gas distribution system

226:導熱氣體通路 226: Heat conduction gas passage

228:分配通道 228: Allocation channel

230:氣體通道 230: gas channel

232:通道寬度 232: channel width

234:通道高度 234: channel height

236:導管入口 236: Conduit entrance

238:導管出口 238: Conduit outlet

Claims (20)

一種基板支撐組件，包括： 一靜電吸盤(ESC)，該ESC具有一上表面； 一頂板，該頂板耦接到該ESC，該頂板包含一溫度控制系統，該溫度控制系統包含： 一個或多個電阻加熱器，該一個或多個電阻加熱器設置在該頂板中且可操作以耦接到一加熱器電源； 一冷卻通道，該冷卻通道穿過該頂板設置；及 一冷卻氣體源，該冷卻氣體源可操作而與該冷卻通道連接，該冷卻氣體源可操作使一冷卻氣體流過該冷卻通道； 複數個氣體通道，該複數個氣體通道穿過該頂板設置並向該ESC的該上表面打開； 一底板，該底板耦接到該頂板，該底板包含一導熱（thermally conductive）氣體分配系統，該導熱氣體分配系統包含： 一分配通道，該分配通道由該底板和該頂板的一底表面界定；及 一導熱氣體源，該導熱氣體源可操作而與該分配通道連接，該導熱氣體源可操作使一導熱氣體流過該分配通道和該複數個氣體通道；及 一控制器，該控制器可操作與該冷卻氣體源連接，該控制器可操作以監測和控制該加熱器電源、該冷卻氣體源和該導熱氣體源，使得維持一預定的支撐件溫度。 A substrate support assembly comprising: an electrostatic chuck (ESC), the ESC has an upper surface; a top plate coupled to the ESC, the top plate includes a temperature control system, the temperature control system includes: one or more resistive heaters disposed in the top plate and operable to be coupled to a heater power supply; a cooling channel disposed through the top plate; and a source of cooling gas operable in connection with the cooling channel, the source of cooling gas operable to flow a cooling gas through the cooling channel; a plurality of gas channels disposed through the top plate and open to the upper surface of the ESC; a base plate coupled to the top plate, the base plate comprising a thermally conductive gas distribution system comprising: a distribution channel bounded by the base plate and a bottom surface of the top plate; and a source of heat transfer gas operable in connection with the distribution channel, the source of heat transfer gas operable to flow a heat transfer gas through the distribution channel and the plurality of gas channels; and A controller is operatively connected to the cooling gas source, the controller being operable to monitor and control the heater power supply, the cooling gas source, and the heat transfer gas source such that a predetermined support temperature is maintained. 如請求項1所述之基板支撐組件，其中該上表面包括複數個凸起的支撐件，該複數個凸起的支撐件可操作以支撐一基板。The substrate support assembly of claim 1, wherein the upper surface includes a plurality of raised supports operable to support a substrate. 如請求項2所述之基板支撐組件，其中該複數個凸起的支撐件、該上表面和該基板界定複數個袋部。The substrate support assembly of claim 2, wherein the plurality of raised supports, the upper surface and the substrate define a plurality of pockets. 如請求項3所述之基板支撐組件，其中該導熱氣體可操作以流過該複數個氣體通道到該複數個袋部。The substrate support assembly of claim 3, wherein the heat transfer gas is operable to flow through the plurality of gas channels to the plurality of pockets. 如請求項1所述之基板支撐組件，其中該冷卻氣體源可操作以經由一冷卻氣體供應導管和一冷卻氣體回程導管而與該冷卻通道流體連通，該冷卻氣體回程導管耦接至該冷卻通道的各端。The substrate support assembly of claim 1, wherein the cooling gas source is operable to be in fluid communication with the cooling channel via a cooling gas supply conduit and a cooling gas return conduit coupled to the cooling channel each end. 如請求項5所述之基板支撐組件，其中一熱交換器可操作以經由一導管入口及經由一導管出口而與該冷卻通道連接，該導管入口耦接到該冷卻氣體供應導管，該導管出口耦接到該冷卻氣體回程導管。The substrate support assembly of claim 5, wherein a heat exchanger is operable to connect to the cooling channel via a conduit inlet coupled to the cooling gas supply conduit and via a conduit outlet, the conduit outlet Coupled to the cooling gas return conduit. 如請求項6所述之基板支撐組件，其中該熱交換器可操作以使來自該冷卻氣體源的該冷卻氣體以一單向流循環通過該冷卻通道，使得維持該預定的支撐件溫度。The substrate support assembly of claim 6, wherein the heat exchanger is operable to circulate the cooling gas from the cooling gas source through the cooling channel in a unidirectional flow such that the predetermined support temperature is maintained. 如請求項4所述之基板支撐組件，其中該冷卻通道包括在約0.5英吋和約2英吋之間的一通道高度。The substrate support assembly of claim 4, wherein the cooling channel includes a channel height of between about 0.5 inches and about 2 inches. 如請求項1所述之基板支撐組件，其中該冷卻通道包括在約0.5英吋和約2英吋之間的一通道寬度。The substrate support assembly of claim 1, wherein the cooling channel includes a channel width of between about 0.5 inches and about 2 inches. 如請求項1所述之基板支撐組件，其中該冷卻通道包括由該冷卻通道的一冷卻通道入口和一冷卻通道出口之間的該冷卻通道的一距離所界定的一通道長度，該通道長度在約1公尺和約10公尺之間。The substrate support assembly of claim 1, wherein the cooling channel includes a channel length defined by a distance of the cooling channel between a cooling channel inlet and a cooling channel outlet of the cooling channel, the channel length being in Between about 1 meter and about 10 meters. 一種方法，包括以下步驟： 將設置在一基板支撐件的一上表面上的一基板加熱到一預定的支撐件溫度，用設置在該基板支撐件中的一個或多個電阻加熱器加熱該基板； 使來自一冷卻氣體源的一冷卻氣體流過一冷卻通道，該冷卻通道穿過該基板支撐件設置，一冷卻氣體源使該冷卻氣體從一導管入口流到一導管出口，以將該基板支撐件維持在該預定的支撐件溫度；及 使用耦接到該冷卻氣體源的一控制器監測該冷卻氣體的一流速，該控制器指示該冷卻氣體源增加或減少該冷卻氣體的該流速以維持該預定的支撐件溫度。 A method comprising the steps of: heating a substrate disposed on an upper surface of a substrate support to a predetermined support temperature by heating the substrate with one or more resistive heaters disposed in the substrate support; flowing a cooling gas from a cooling gas source through a cooling channel disposed through the substrate support, a cooling gas source causing the cooling gas to flow from a conduit inlet to a conduit outlet to support the substrate the member is maintained at the predetermined support member temperature; and The flow rate of the cooling gas is monitored using a controller coupled to the cooling gas source, the controller instructs the cooling gas source to increase or decrease the flow rate of the cooling gas to maintain the predetermined support temperature. 如請求項11所述之方法，進一步包括以下步驟：在加熱該基板之前，將一基板設置在該基板支撐件的一上表面上，該基板支撐件設置在一處理系統的一腔室主體中，該基板支撐件包含一靜電吸盤(ESC)、一頂板與一底板，該頂板耦接到該ESC，該底板耦接到該頂板。The method of claim 11, further comprising the step of disposing a substrate on an upper surface of the substrate support disposed in a chamber body of a processing system prior to heating the substrate , the substrate support includes an electrostatic chuck (ESC), a top plate and a bottom plate, the top plate is coupled to the ESC, and the bottom plate is coupled to the top plate. 如請求項12所述之方法，其中與該冷卻通道流體連通的一熱交換器使該冷卻氣體循環通過該頂板，使得維持該預定的支撐件溫度。The method of claim 12, wherein a heat exchanger in fluid communication with the cooling channel circulates the cooling gas through the top plate such that the predetermined support temperature is maintained. 如請求項13所述之方法，其中耦接到該熱交換器的該控制器監測和控制該冷卻氣體的壓力以維持該預定的支撐件溫度。The method of claim 13, wherein the controller coupled to the heat exchanger monitors and controls the pressure of the cooling gas to maintain the predetermined support temperature. 如請求項12所述之方法，進一步包括以下步驟：當達到該預定的支撐件溫度時，處理該腔室主體內的該基板，該處理該基板的步驟包括以下步驟：施行一電漿增強化學氣相沉積(PECVD)製程。The method as recited in claim 12, further comprising the step of: processing the substrate in the chamber body when the predetermined support temperature is reached, the step of processing the substrate includes the step of: performing a plasma enhanced chemical Vapor phase deposition (PECVD) process. 如請求項11所述之方法，其中該冷卻氣體源使該冷卻氣體以約500每分鐘標準升(SLM)和約2000 SLM之間的一流速流動。The method of claim 11, wherein the cooling gas source flows the cooling gas at a flow rate between about 500 standard liters per minute (SLM) and about 2000 SLM. 如請求項11所述之方法，其中以約1標準大氣壓和約3標準大氣壓之間的一壓力提供該冷卻氣體。The method of claim 11, wherein the cooling gas is provided at a pressure between about 1 atmosphere and about 3 atmospheres. 如請求項11所述之方法，其中該冷卻氣體從該基板支撐件移除約1kW和約10kW之間的熱。The method of claim 11, wherein the cooling gas removes between about 1 kW and about 10 kW of heat from the substrate support. 如請求項11所述之方法，其中該冷卻氣體包括氮(N 2)或其組合。 The method of claim 11, wherein the cooling gas comprises nitrogen (N 2 ) or a combination thereof. 一種方法，包括以下步驟： 將一基板設置在一基板支撐件的一上表面上，該基板支撐件設置在一處理系統的一腔室主體中，該基板支撐件包含一靜電吸盤(ESC)、一頂板與一底板，該頂板耦接到該ESC，該底板耦接到該頂板； 用設置在該頂板中的一個或多個電阻加熱器將該基板加熱到一預定的支撐件溫度； 處理該腔室主體內的該基板；及 使來自一冷卻氣體源的一冷卻氣體流過一冷卻通道，該冷卻通道穿過該頂板設置，該冷卻氣體源可操作以使該冷卻氣體流過該冷卻通道以將該基板支撐件維持在該預定的支撐件溫度。 A method comprising the steps of: A substrate is disposed on an upper surface of a substrate support disposed in a chamber body of a processing system, the substrate support including an electrostatic chuck (ESC), a top plate and a bottom plate, the a top plate coupled to the ESC, the bottom plate coupled to the top plate; heating the substrate to a predetermined support temperature with one or more resistive heaters disposed in the top plate; process the substrate within the chamber body; and flowing a cooling gas from a cooling gas source through a cooling channel disposed through the top plate, the cooling gas source being operable to flow the cooling gas through the cooling channel to maintain the substrate support in the Predetermined support temperature.
TW111120545A 2021-07-02 2022-06-02 High temperature susceptor for high power rf applications TW202308028A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
WOPCT/US21/40298 2021-07-02
PCT/US2021/040298 WO2023277923A1 (en) 2021-07-02 2021-07-02 High temperature susceptor for high power rf applications

Publications (1)

Publication Number Publication Date
TW202308028A true TW202308028A (en) 2023-02-16

Family

ID=84690578

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111120545A TW202308028A (en) 2021-07-02 2022-06-02 High temperature susceptor for high power rf applications

Country Status (3)

Country Link
KR (1) KR20240023670A (en)
TW (1) TW202308028A (en)
WO (1) WO2023277923A1 (en)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4559595B2 (en) * 2000-07-17 2010-10-06 東京エレクトロン株式会社 Apparatus for placing object to be processed and plasma processing apparatus
JP2013153171A (en) * 2013-02-15 2013-08-08 Panasonic Corp Plasma processing apparatus and plasma processing method
IL247032B (en) * 2014-02-14 2022-07-01 Applied Materials Inc Gas cooled substrate support for stabilized high temperature deposition
KR102644272B1 (en) * 2016-10-31 2024-03-06 삼성전자주식회사 electrostatic chuck assembly
JP7198629B2 (en) * 2018-10-26 2023-01-04 日本特殊陶業株式会社 holding device

Also Published As

Publication number Publication date
WO2023277923A1 (en) 2023-01-05
KR20240023670A (en) 2024-02-22

Similar Documents

Publication Publication Date Title
KR101109440B1 (en) Method and apparatus for controlling spatial temperature distribution
US6565661B1 (en) High flow conductance and high thermal conductance showerhead system and method
US6949722B2 (en) Method and apparatus for active temperature control of susceptors
JP4176848B2 (en) Substrate support and processing apparatus
TW201718928A (en) Susceptor and substrate processing apparatus
JP6268095B2 (en) Thermal management of edge rings in semiconductor processing.
US7358200B2 (en) Gas-assisted rapid thermal processing
JP4990636B2 (en) Vacuum processing equipment using a transport tray
JP2007535816A5 (en)
KR20100016083A (en) Showerhead electrodes and showerhead electrode assemblies having low-particle performance for semiconductor material processing apparatuses
US20070113976A1 (en) Plasma chamber wall segment temperature control
JP2010520649A (en) Processing system and method for performing high-throughput non-plasma processing
KR101039085B1 (en) Plasma processing apparatus and plasma processing method
TW201944531A (en) Ceramic wafer heater having cooling channels with minimum fluid drag
TW201303973A (en) Process gas diffuser assembly for vapor deposition system
US6508062B2 (en) Thermal exchanger for a wafer chuck
JP4742431B2 (en) Heat treatment equipment
TW202308028A (en) High temperature susceptor for high power rf applications
JP2006505947A (en) Forced convection rapid heating furnace
JP7164632B2 (en) Temperature controlled gas diffuser for flat panel process equipment
JP2021188138A (en) Shower plate, substrate processor and substrate processing method
TW202129800A (en) Gas distribution ceramic heater for deposition chamber
CN112352064A (en) Temperature control pedestal for flat panel processing equipment
JP7145625B2 (en) Substrate mounting structure and plasma processing apparatus
TW202039927A (en) Pedestal including vapor chamber for substrate processing systems