CN112103166A

CN112103166A - Substrate processing apparatus

Info

Publication number: CN112103166A
Application number: CN202010530936.0A
Authority: CN
Inventors: 早坂友辅; 郑俊泳; 山边周平; 山口景一; 谷川雄洋
Original assignee: Tokyo Electron Ltd
Current assignee: Tokyo Electron Ltd
Priority date: 2019-06-18
Filing date: 2020-06-11
Publication date: 2020-12-18

Abstract

The invention provides a substrate processing apparatus with improved thermal responsiveness. A substrate processing apparatus includes: a chamber having a plasma processing space, a sidewall of the chamber having an opening for transferring a substrate into the plasma processing space; and a shutter disposed inside the side wall and opening and closing the opening, the shutter having a flow path for a temperature control fluid.

Description

Substrate processing apparatus

Technical Field

The present disclosure relates to a substrate processing apparatus.

Background

For example, a substrate processing apparatus is known which performs a predetermined process on a substrate such as a wafer.

Patent document 1 discloses a plasma processing apparatus including a sidewall member covering an inner wall side surface of a processing chamber. Further, patent document 2 discloses a substrate processing apparatus including: a cylindrical chamber having an opening; a deposition shield disposed along an inner wall of the chamber and having an opening at a position corresponding to the opening of the chamber; and a shutter that opens and closes an opening portion of the deposition shield.

Documents of the prior art

Patent document

Patent document 1: japanese laid-open patent publication No. 2012-138497

Patent document 2: japanese patent laid-open publication No. 2015-126197

Disclosure of Invention

Problems to be solved by the invention

In one aspect, the present disclosure provides a substrate processing apparatus with improved thermal responsiveness.

Means for solving the problems

In order to solve the above problem, according to one aspect, there is provided a substrate processing apparatus including: a chamber having a plasma processing space, a sidewall of the chamber having an opening for transferring a substrate into the plasma processing space; and a shutter disposed inside the side wall and opening and closing the opening, the shutter having a flow path for a temperature control fluid.

ADVANTAGEOUS EFFECTS OF INVENTION

According to one aspect, a substrate processing apparatus with improved thermal responsiveness can be provided.

Drawings

Fig. 1 is a schematic view of a plasma processing apparatus according to the present embodiment.

Fig. 2 is a partially enlarged sectional view of the plasma processing apparatus shown in fig. 1.

Fig. 3 is a partially enlarged sectional view of the plasma processing apparatus shown in fig. 1.

Fig. 4 is an exploded perspective view of the valve body of example 1 and example 2 and a perspective view of the valve body in which the shape of the flow path is modeled.

Fig. 5 is an exploded perspective view of the valve body of examples 3 and 4 and a perspective view of the valve body in which the shape of the flow path is modeled.

Fig. 6 is a diagram showing the position and number of particles attached to the substrate.

Fig. 7 is a graph showing a relationship between the temperature of the valve element and the operation amount of the heater.

Fig. 8 is a diagram showing an example of simulation results of temperature distributions in the valve bodies of examples 1 to 4.

Fig. 9 is a diagram showing an example of simulation of the temperatures of the valve body and the flange and the pressures at the inlet and the outlet of the flow path when the dry air flow rate is changed in the valve bodies of examples 1 to 4.

Detailed Description

Hereinafter, various exemplary embodiments will be described in detail with reference to the drawings. In the drawings, the same or corresponding portions are denoted by the same reference numerals.

A plasma processing apparatus (substrate processing apparatus) 1 according to the present embodiment will be described with reference to fig. 1 to 3. Fig. 1 is a schematic view of a plasma processing apparatus according to the present embodiment. Fig. 2 and 3 are partially enlarged sectional views of the plasma processing apparatus shown in fig. 1. Fig. 2 shows a state in which the corresponding opening is closed by the valve element of the shutter mechanism using one example. Fig. 3 shows a state in which the corresponding opening is opened by the valve body of the shutter mechanism of one example. The plasma processing apparatus 1 shown in fig. 1 to 3 includes a chamber 10. The chamber 10 is provided therein with an inner space 10 s. The internal space 10s can be depressurized. Plasma is formed in the internal space 10 s. That is, the chamber 10 has a plasma processing space.

The chamber 10 includes a chamber body 12 and a top 14. The chamber body 12 forms the sidewalls and bottom of the chamber 10. The chamber body 12 has a generally cylindrical shape. The center axis of the chamber body 12 substantially coincides with the axis AX extending in the vertical direction. The chamber body 12 is electrically grounded. The chamber body 12 is formed of, for example, aluminum. A corrosion-resistant film is formed on the surface of the chamber body 12. The corrosion-resistant film is formed of a material such as alumina or yttria.

An opening (opening, 1 st opening) 12p is formed in a side wall of the chamber 10. The opening 12p is provided by the chamber body 12. The opening 12p can be opened and closed by a gate valve 12 g. When the substrate W is conveyed between the inner space 10s and the outside of the chamber 10, the substrate W passes through the opening 12 p. That is, the sidewall of the chamber 10 has an opening 12p for transferring the substrate W to the plasma processing space.

In this embodiment, the chamber body 12 includes a 1 st member 12a and a 2 nd member 12 b. The 1 st member 12a has a substantially cylindrical shape. The 1 st member 12a constitutes a part of the bottom and side walls of the chamber 10. The 2 nd member 12b has a substantially cylindrical shape. The 2 nd member 12b is disposed on the 1 st member 12 a. The 2 nd member 12b constitutes another part of the side wall of the chamber 10. The 2 nd member 12b is provided with an opening 12 p.

A support table 16 is provided in the internal space 10 s. The support table 16 is configured to support the substrate W placed thereon. A bottom plate 17 is provided below the support table 16. The floor 17 is supported by the bottom of the chamber 10, e.g., the 1 st member 12 a. The support 18 extends upward from the bottom plate 17. The support body 18 has a substantially cylindrical shape. The support 18 is formed of an insulator such as quartz. The support base 16 is mounted on a support body 18 and supported by the support body 18.

The support table 16 includes a lower electrode 20 and an electrostatic chuck 22. The support base 16 may further include an electrode plate 24. The electrode plate 24 has a substantially circular disk shape. The central axis of the electrode plate 24 substantially coincides with the axis AX. The electrode plate 24 is formed of a conductor such as aluminum.

The lower electrode 20 is disposed on the electrode plate 24. The lower electrode 20 is electrically connected to an electrode plate 24. The lower electrode 20 has a substantially disk shape. The central axis of the lower electrode 20 substantially coincides with the axis AX. The lower electrode 20 is formed of a conductor such as aluminum. A flow channel 20f is formed in the lower electrode 20. The flow path 20f extends, for example, in a spiral shape. The coolant is supplied from the chiller unit 26 to the flow path 20 f. The chiller unit 26 is disposed outside the chamber 10. The chiller unit 26 supplies, for example, a liquid refrigerant to the flow path 20 f. The refrigerant supplied to the flow path 20f returns to the chiller unit 26.

The electrostatic chuck 22 is disposed on the lower electrode 20. The electrostatic chuck 22 includes a body and an electrode 22 a. The body of the electrostatic chuck 22 has a generally circular disk shape. The central axis of the electrostatic chuck 22 substantially coincides with the axis AX. The body of the electrostatic chuck 22 is formed of ceramic. The electrode 22a is a film formed of a conductor. The electrode 22a is disposed within the body of the electrostatic chuck 22. A dc power supply 22d is connected to the electrode 22a via a switch 22 s. When the substrate W is held by the electrostatic chuck 22, a voltage from the dc power supply 22d is applied to the electrode 22 a. When a voltage is applied to the electrode 22a, an electrostatic attractive force is generated between the electrostatic chuck 22 and the substrate W. Due to the generated electrostatic attraction, the substrate W is attracted by the electrostatic chuck 22 and held by the electrostatic chuck 22. The plasma processing apparatus 1 may also be provided with a gas line for supplying a heat transfer gas (e.g., helium gas) between the electrostatic chuck 22 and the back surface of the substrate W.

A focus ring FR is disposed on a peripheral edge portion of the electrostatic chuck 22 so as to surround the substrate W. The focus ring FR is used to improve the in-plane uniformity of plasma processing performed on the substrate W. The focus ring FR is formed of, for example, silicon, quartz, or silicon carbide. A ring 27 is provided between the focus ring FR and the lower electrode 20. The ring 27 is formed of an insulator.

The plasma processing apparatus 1 may further include a cylindrical portion 28 and a cylindrical portion 29. The cylindrical portion 28 extends along the outer peripheries of the support base 16 and the support body 18. The cylindrical portion 28 is provided on the cylindrical portion 29. The cylindrical portion 28 is formed of an insulator having corrosion resistance. The cylindrical portion 28 is formed of, for example, quartz. The cylindrical portion 29 extends along the outer periphery of the support body 18. The cylindrical portion 29 is formed of an insulator having corrosion resistance. The cylindrical portion 29 is formed of, for example, quartz.

The top 14 is arranged in such a way as to close the upper end opening of the chamber 10. The top 14 includes an upper electrode 30. The top 14 can also include a member 32 and a member 34. The member 32 is a substantially annular plate and is formed of a metal such as aluminum. The member 32 is provided on the side wall of the chamber 10 via a member 58 to be discussed later. The member 32 has a flow path 32 f. The flow path 32f extends in the member 32 so as to surround the annular member 32. The coolant is supplied from the chiller unit 40 to the flow path 32 f. The chiller unit 40 is disposed outside the chamber 10. The chiller unit 40 supplies a liquid refrigerant (e.g., cooling water) to the flow path 32 f. The refrigerant supplied to the flow path 32f returns to the chiller unit 40. The chiller unit 40 can supply the refrigerant to the flow path 32f at a flow rate of, for example, 4L/min or more. The member 34 is disposed between the upper electrode 30 and the member 32. The member 34 extends in the circumferential direction with respect to the axis AX. The member 34 is formed of an insulator such as quartz. A seal member 35a such as an O-ring is interposed between the upper electrode 30 and the member 34. A seal member 35b such as an O-ring is interposed between the member 34 and the member 32.

The upper electrode 30 includes a top plate 36 and a support 38. The top plate 36 has a substantially circular disk shape. The top plate 36 is in contact with the internal space 10 s. The top plate 36 has a plurality of gas ejection holes 36 h. The plurality of gas ejection holes 36h penetrate the top plate 36 in the plate thickness direction (vertical direction). The top plate 36 is formed of silicon, alumina, or quartz. Alternatively, the top plate 36 may be formed by forming a corrosion-resistant film on the surface of a member made of a conductor such as aluminum. The corrosion-resistant film is formed of a material such as alumina or yttria.

The support 38 is provided on the top plate 36. The support 38 supports the top plate 36 to be detachable. The support body 38 is formed of, for example, aluminum. The support 38 has a flow path 38f formed therein. The flow path 38f extends in a spiral shape, for example, in the support body 38. The coolant is supplied from the chiller unit 40 to the flow path 38 f. The chiller unit 40 supplies a liquid refrigerant (e.g., cooling water) to the flow path 38 f. The refrigerant supplied to the flow path 38f returns to the chiller unit 40. The chiller unit 40 can supply the refrigerant to the flow path 38f at a flow rate of, for example, 4L/min or more.

A gas diffusion chamber 38d is formed inside the support body 38. The support body 38 has a plurality of holes 38h formed therein. The plurality of holes 38h extend downward from the gas diffusion chamber 38d and are connected to the plurality of gas ejection holes 36h, respectively. The support body 38 is provided with a port 38 p. The port 38p is connected to the gas diffusion chamber 38 d. A gas source group 41 is connected to the port 38p via a valve group 42, a flow rate controller group 43, and a valve group 44.

The gas source group 41 includes a plurality of gas sources. The valve block 42 and the valve block 44 each include a plurality of valves. The flow controller group 43 includes a plurality of flow controllers. The plurality of flow controllers are each a mass flow controller or a pressure-controlled flow controller. The multiple gas sources of the gas source group 41 are connected to the port 38p via corresponding valves of the valve group 44, corresponding flow controllers of the flow controller group 43, and corresponding valves of the valve group 42, respectively. In the plasma processing apparatus 1, the gas diffusion chamber 38d is supplied with the gas from one or more gas sources selected from the plurality of gas sources of the gas source group 41. The gas supplied to the gas diffusion chamber 38d is supplied to the internal space 10s from the plurality of gas ejection holes 36 h.

The plasma processing apparatus 1 further includes a 1 st high-frequency power supply 51 and a 2 nd high-frequency power supply 52. The 1 st high-frequency power supply 51 is a power supply for generating the 1 st high-frequency power for plasma generation. The frequency of the 1 st high-frequency power is, for example, 27MHz or more. The 1 st high-frequency power supply 51 is electrically connected to the lower electrode 20 via a matching unit 53. The matching unit 53 has a matching circuit for matching the impedance on the load side (lower electrode 20 side) with the output impedance of the 1 st high-frequency power supply 51. The 1 st high-frequency power source 51 may be connected to the upper electrode 30 via the matching unit 53, but not connected to the lower electrode 20.

The 2 nd high-frequency power source 52 is a power source for generating 2 nd high-frequency power for attracting ions to the substrate W. The frequency of the 2 nd high-frequency power is, for example, 13.56MHz or less. The 2 nd high frequency power source 52 is electrically connected to the lower electrode 20 via a matching unit 54. The matching unit 54 has a matching circuit for matching the impedance on the load side (lower electrode 20 side) with the output impedance of the 2 nd high-frequency power supply 52.

The plasma processing apparatus 1 further includes a member 58 (deposition shield, annular protective member). The member 58 is partially disposed in the internal space 10 s. In addition, the member 58 defines a plasma processing space. That is, a part of the member 58 is exposed to plasma in the internal space 10 s. The member 58 extends from the internal space 10s toward the outside of the chamber 10 while being exposed to the space outside the chamber 10.

In the present embodiment, the member 58 extends along the inner wall surface of the chamber 10 in order to suppress deposition of by-products generated by the plasma treatment on the inner wall surface of the chamber 10. That is, the member 58 protects the inner wall surface of the chamber 10. Specifically, the member 58 extends along the inner wall surface of the chamber body 12 or the inner wall surface of the 2 nd member 12 b. The member 58 has an annular shape (substantially cylindrical shape). The member 58 can be formed by forming a corrosion-resistant film on the surface of a member made of a conductor such as aluminum. The corrosion-resistant film is formed of a material such as alumina or yttria.

In this embodiment, the member 58 is clamped between the chamber body 12 and the top 14. For example, the member 58 is clamped between the 2 nd member 12b of the chamber body 12 and the member 32 of the top 14.

In the present embodiment, the plasma processing apparatus 1 may further include a liner 59. The pad 59 is plate-shaped, and extends in the circumferential direction around the axis AX. A gasket 59 is disposed between member 58 and chamber 10. The spacer 59 is formed of, for example, a conductor. The gasket 59 may also be formed of a material having a thermal conductivity lower than that of aluminum. The gasket 59 may also be formed of, for example, stainless steel. The gasket 59 may be formed of a material other than stainless steel as long as it has a thermal conductivity lower than that of aluminum. Further, the gasket 59 may be formed of aluminum.

In the present embodiment, the gasket 59 is provided between the member 58 and the 2 nd member 12 b. In the present embodiment, the spacer 59 and the 2 nd member 12b are fixed to the 1 st member 12a using the screw 60 a. The screw 60a is screwed into the screw hole of the 1 st member 12a through the spacer 59 and the 2 nd member 12 b. The member 58 is secured to the pad 59 using screws 60 b. The screw 60b is screwed into the screw hole of the spacer 59 through the member 58. According to the present embodiment, even if the member 58 is detached from the chamber 10 for, for example, maintenance thereof, the packing 59 and the 2 nd member 12b are kept in a state of being fixed to the 1 st member 12a by the screw 60 a. Thus, the member 58 can be detached from the chamber 10 while maintaining the fixation of the packing 59 and the 2 nd member 12 b.

The plasma processing apparatus 1 further includes a heater unit 62. The heater unit 62 includes a main body 62m and a heater 62 h. The heater 62h is configured to heat the member 58. The heater 62h can be a resistive heating element. The heater 62h is provided in the main body 62 m. The body 62m is in thermal contact with the member 58. In this embodiment, the body 62m is in physical contact with the member 58. The main body 62m is formed of a conductor such as aluminum. The heater 62h is configured to heat the member 58 through the body 62 m.

In the present embodiment, the main body 62m is a substantially annular plate extending in the circumferential direction so as to surround the upper electrode 30. In this embodiment, the top 14 further includes a member 56. Member 56 is a generally annular plate. The member 56 extends in the circumferential direction in a region radially outward of the top plate 36. The radial direction is a direction radial to the axis AX. The heater unit 62 is disposed between the

members

56 and 32 and between the

members

34 and 58.

A sealing member such as an O-ring is provided between the main body 62m and the surrounding members so as to separate the reduced pressure environment including the internal space 10s from the atmospheric pressure environment. Specifically, a seal member 63a is provided between the main body 62m and the member 32.

A blocking member 72 is provided between the member 58 and the support body 18. In the present embodiment, the blocking member 72 has a substantially cylindrical shape. The upper end of the blocking member 72 is formed in a flange shape. The stopper member 72 has a lower end formed in a substantially annular shape and extends radially inward. The outer edge of the upper end of the stop member 72 engages the lower end of the member 58. The inner edge of the lower end of the stopper member 72 is sandwiched between the cylindrical portion 29 and the bottom plate 17. The blocking member 72 is formed of a plate made of a conductor such as aluminum. A corrosion-resistant film is formed on the surface of the dam member 72. The corrosion-resistant film is formed of a material such as alumina or yttria. The stopper member 72 has a plurality of through holes.

The internal space 10s includes a gas discharge region extending below the blocking member 72. An exhaust device 74 is connected to the exhaust area. The exhaust device 74 includes a pressure regulator such as an automatic pressure control valve and a decompression pump such as a turbo molecular pump.

The member 58 has an opening (2 nd opening) 58p formed therein. An opening 58p is formed in the member 58 so as to face the opening 12 p. When the substrate W is conveyed between the inner space 10s and the outside of the chamber 10, the substrate W passes through the opening 12p and the opening 58 p.

The plasma processing apparatus 1 may further include a shutter mechanism 76. The shutter mechanism 76 is configured to open and close the opening 58 p. The shutter mechanism 76 is configured to open and close the opening 12p for transporting the substrate W to the plasma processing space. The shutter mechanism 76 includes a valve element 76v (shutter) and a shaft body 76 s. The shutter mechanism 76 may further include a cylindrical body 76a, a sealing portion 76b, a wall portion 76w, and a driving portion 76 d.

The valve body 76v closes the opening 58p in a state of being disposed in the opening 58 p. The valve body 76v is disposed inside the sidewall of the chamber 10, and opens and closes an opening 12p for transferring the substrate W to the plasma processing space. The spool 76v is supported by a shaft body 76 s. That is, the shaft body 76s is coupled to the spool 76 v. Shaft body 76s extends downward from valve element 76 v. The shaft body 76s includes a main portion 76m and a flange 76 f. The main portion 76m is formed in a substantially cylindrical shape. That is, the shaft body 76s is provided with a cavity 76c inside thereof. A flange 76f is provided on the upper end of the main portion 76 m. The spool 76v is provided on the flange 76 f. A cavity 76c of shaft body 76s is also formed in flange 76 f. A heater 76h is provided in the flange 76 f. The heater 76h is, for example, a resistance heating element. The heater 76h is configured to heat the valve body 76v via the flange 76 f.

A flow path 76r through which a temperature control fluid (refrigerant, heat medium) flows is provided inside the valve body 76 v. The temperature control fluid is introduced into the flow path 76r through the introduction pipe 78a passing through the cavity 76 c. The temperature-adjusting fluid circulates through the flow path 76r and is discharged from the cavity 76 c. Further, a flow meter for detecting the flow rate of the temperature control fluid, a regulator for regulating the flow rate of the temperature control fluid, and the like may be provided. The control unit 80, which will be described later, controls the flow rate of the temperature control fluid supplied to the flow path 76r in accordance with the amount of heat input from the plasma in the internal space 10s to the valve body 76 v. The controller 80 controls the heater 76h in accordance with the amount of heat input from the plasma in the internal space 10s to the valve body 76 v. This allows the temperature of the valve body 76v to be within a desired temperature range. The type of the temperature control fluid is not limited, and may be, for example, a gas such as dry air or a liquid such as cooling water.

The cylinder 76a has a cylindrical shape. The cylinder 76a is secured to the chamber body 12, either directly or indirectly. The main portion 76m of the shaft body 76s passes through the cylindrical body 76a and can move up and down. The driving portion 76d generates power for moving the main portion 76m of the shaft body 76s up and down. The driving portion 76d includes, for example, a motor.

The seal portion 76b is provided in the cylinder 76 a. The seal portion 76b closes a gap between the cylindrical body 76a and the main portion 76m of the shaft body 76s, and ensures airtightness of the internal space 10 s. The seal portion 76b is not limited, and may be an O-ring or a magnetic fluid seal. The wall portion 76w extends between the cylinder 76a and the chamber body 12. The wall portion 76w closes the gap between the cylindrical body 76a and the chamber body 12, and ensures airtightness of the internal space 10 s.

The plasma processing apparatus 1 further includes a supply unit (fluid supply unit) 78. The supply unit 78 is configured to supply the temperature-controlled fluid to the flow path 76r of the valve body 76v via the introduction pipe 78 a. One end of the introduction pipe 78a is connected to the feeder 78, the introduction pipe 78a passes through the cavity 76c of the shaft body 76s, and the other end of the introduction pipe 78a is connected to a joint (not shown) provided to the flange 76 f. An inlet-side flow passage 76e connected from a joint to an inlet of the flow passage 76r of the valve body 76v is formed in the flange 76 f. An outlet-side flow passage (not shown) connected from the outlet of the flow passage 76r to the cavity 76c is formed in the flange 76 f. The dry air as the temperature control fluid supplied from the supply unit 78 is supplied to the inlet of the flow path 76r through the introduction pipe 78a and the inlet side flow path 76 e. The dry air circulates through the flow path 76r, and is discharged from the outlet of the flow path 76r to the outside of the apparatus through the outlet-side flow path of the flange 76f and the cavity 76 c. Further, although the case where the temperature control fluid is dry air and is exhausted to the outside of the apparatus has been described as an example, the temperature control fluid may be configured to include a discharge pipe connected to the supply unit 78 from the outlet-side flow path of the flange 76f, and the temperature control fluid may be circulated between the supply unit 78 and the flow path 76r of the valve body 76 v.

In the present embodiment, the plasma processing apparatus 1 may further include a control unit (control device) 80. The controller 80 is configured to control each part of the plasma processing apparatus 1. The control unit 80 is, for example, a computer device. The control unit 80 includes a processor, a storage unit, an input device such as a keyboard, a display device, and a signal input/output interface. The storage unit stores a control program and process data. The processor executes a control program and transmits control signals to each unit of the plasma processing apparatus 1 via the input/output interface in accordance with process data.

Next, an example of the structure of the valve body 76v (76v1 to 76v4) having the flow path 76r will be described with reference to fig. 4 and 5.

(valve cartridge of example 1)

Fig. 4 (a) is an exploded perspective view of the valve body 76v1 of example 1, and fig. 4 (b) is a perspective view of the valve body 76v1 of example 1 in which the shape of the flow passage 76r1 is modeled.

The spool 76v1 has a spool body 111 and a flow path forming member (path block) 112. The valve body 111 has a recess 111a formed from below. The flow path forming member 112 fits into the concave portion 111 a. When the flow passage forming member 112 is inserted into the concave portion 111a, the flow passage 76r1 is formed. That is, the concave portion 111a and the flow passage forming member 112 define the flow passage 76r 1. The valve body 111 and the flow passage forming member 112 are welded by electron beam welding or the like.

The flow passage forming member 112 has an arc-shaped base portion 112a and an arc plate portion 112b extending upward from the base portion 112 a. Grooves for forming the flow path 76r1 are formed in the base portion 112a and the arc plate portion 112 b. The recess 111a of the valve body 111 has a shape into which the base 112a and the arc plate 112b can be inserted.

The flow path 76r1 has an inlet 113, flow paths 114 to 118, and an outlet 119. When the valve body 76v1 is fixed to the flange 76f, the inlet 113 communicates with an inlet-side flow passage 76e formed in the flange 76 f. Inlet 113 is connected to flow path 114. The flow path 114 is formed on the inner peripheral surface side (the side closer to the support base 16) of the flow path forming member 112, and is a horizontal flow path extending in an arc shape along the shape of the valve body 76v 1. The flow channel 115 is formed on the inner circumferential surface side of the flow channel forming member 112, and is a flow channel extending in the vertical direction so as to connect the flow channel 114 and the flow channel 116. The flow path 116 is formed in the flow path forming member 112, and is a horizontal flow path extending in an arc shape along the shape of the valve body 76v 1. The flow channel 117 is formed on the outer peripheral surface side of the flow channel forming member 112, and is a flow channel extending in the vertical direction so as to connect the flow channel 116 and the flow channel 118. The flow path 118 is formed on the outer peripheral surface side of the flow path forming member 112, and is a flow path that extends horizontally and in an arc shape along the shape of the valve body 76v 1. When the valve body 76v1 is fixed to the flange 76f, the outlet 119 communicates with an outlet-side flow passage (not shown) formed in the flange 76 f. The outlet 119 is connected to the flow path 118.

The temperature-control fluid supplied from the supply unit 78 passes through the introduction pipe 78a and the inlet side flow path 76e, and is supplied to the inlet 113 of the flow path 76r 1. The temperature-adjusting fluid supplied from the inlet 113 is branched from the flow path 114 into a plurality of flow paths 115 and flows, and then merges into a flow path 116. Thereafter, the temperature-adjusting fluid branches again to flow through the plurality of flow paths 117, merges into the flow path 118, and is discharged from the outlet 119 to the outside of the apparatus via the outlet-side flow path (not shown) of the flange 76f and the cavity 76 c.

(valve cartridge of example 2)

Fig. 4 (c) is an exploded perspective view of the valve body 76v2 of example 2, and fig. 4 (d) is a perspective view of the valve body 76v2 of example 2 in which the shape of the flow passage 76r2 is modeled.

The spool 76v2 has a spool body 121 and a flow path forming member (path block) 122. The valve body 121 has a recess 121a formed from below. The flow path forming member 122 fits into the recess 121 a. When the flow passage forming member 122 is inserted into the recess 121a, the flow passage 76r2 is formed. That is, the recess 121a and the flow passage forming member 122 define the flow passage 76r 2. The valve body 121 and the flow path forming member 122 are welded by electron beam welding or the like.

The flow passage forming member 122 has an arc-shaped base portion 122a and a plate portion 122b extending upward from the base portion 122 a. A groove for forming the flow path 76r2 is formed in the base portion 122 a. The recess 121a of the valve body 121 has a shape that can be inserted into the base 122a and a plurality of holes. The plate portions 122b are inserted into the holes, respectively.

The flow path 76r2 has an inlet 123, flow paths 124-128, and an outlet 129. When the valve body 76v2 is fixed to the flange 76f, the inlet 123 communicates with an inlet-side flow passage 76e formed in the flange 76 f. The inlet 123 is connected to a flow path 124. The flow path 124 is formed on the inner peripheral surface side of the flow path forming member 122, and is a flow path that extends horizontally and in an arc shape along the shape of the valve body 76v 2. The flow path 125 is formed on the inner peripheral surface side of the flow path forming member 122, and is a flow path extending in the vertical direction so as to connect the flow path 124 and the flow path 126. The flow path 126 is formed in the flow path forming member 122, and is a horizontal flow path extending in an arc shape along the shape of the valve body 76v 2. The flow path 127 is formed on the outer peripheral surface side of the flow path forming member 122, and is a flow path extending in the vertical direction so as to connect the flow path 126 and the flow path 128. The flow path 128 is formed on the outer peripheral surface side of the flow path forming member 122, and is a flow path that extends horizontally and in an arc shape along the shape of the valve body 76v 2. When the valve body 76v2 is fixed to the flange 76f, the outlet 129 communicates with an outlet-side flow passage (not shown) formed in the flange 76 f. The outlet 129 is connected to the flow path 128.

The temperature-control fluid supplied from the supply unit 78 is supplied to the inlet 123 of the flow path 76r2 through the introduction pipe 78a and the inlet side flow path 76 e. The temperature-adjusting fluid supplied from the inlet 123 branches from the flow path 124 to the plurality of flow paths 125, flows through the

flow paths

125, 126, and 127, merges into the flow path 128, and is discharged from the outlet 129 to the outside of the apparatus via the outlet-side flow path (not shown) of the flange 76f and the cavity 76 c.

(valve cartridge of example 3)

Fig. 5 (a) is an exploded perspective view of the valve body 76v3 of example 3, and fig. 5 (b) is a perspective view of the valve body 76v3 of example 3 in which the shape of the flow passage 76r3 is modeled.

The spool 76v3 has a spool body 131 and a cover member 132. A recess 131a is formed on the outer circumferential surface side of the valve body 131. The recess 131a of the valve body 131 has a dug portion 131b into which the lid member 132 is fitted and a groove 131c formed in the bottom surface (1 st surface) of the dug portion 131 b. The cover member 132 covers the bottom surface (1 st surface) of the undercut 131 b. The cover member 132 is fitted to the undercut 131b to form a flow path 76r 3. That is, the bottom surface (1 st surface) of the undercut 131b and the lid member 132 define the flow path 76r 3. The valve body 131 and the lid member 132 are welded by electron beam welding or the like.

The flow path 76r3 has an inlet 133,

flow paths

134, 135, an outlet 136,

flow paths

137, 138, and an outlet 139. The

flow paths

134, 135, 137, and 138 are formed to horizontally meander. When the valve body 76v3 is fixed to the flange 76f, the inlet 133 communicates with an inlet-side flow passage 76e formed in the flange 76 f. The inlet 133 is connected to the

branched flow paths

134 and 137. The flow path 134 is a forward flow path that faces upward while reciprocating in the horizontal direction on one side (the left side in fig. 5 (b)) of the valve body 131 in the horizontal direction. The flow path 134 is connected to the flow path 135. The flow path 135 is a return flow path that reciprocates in the horizontal direction on one side of the valve body 131 in the horizontal direction and faces downward. The flow path 135 is connected to the outlet 136. The outlet 136 communicates with an outlet-side flow passage (not shown) formed in the flange 76f when the valve body 76v3 is fixed to the flange 76 f. The flow path 137 is a forward flow path that faces upward while reciprocating in the horizontal direction on the other side (the right side in fig. 5 (b)) of the valve body 131 in the horizontal direction. The flow path 138 is connected to the flow path 137. The flow path 138 is a return flow path that reciprocates in the horizontal direction on the other side of the valve body 131 in the horizontal direction and faces downward. The flow path 138 is connected to the outlet 139. The outlet 139 communicates with an outlet-side flow path (not shown) formed in the flange 76f when the valve body 76v3 is fixed to the flange 76 f. On one side of the valve body 131 in the horizontal direction (the left side in fig. 5 b), the return flow path 135 is disposed outside (on the left side) the forward flow path 134. Further, on the other side (the right side in fig. 5 b) of the valve body 131 in the horizontal direction, the return flow path 138 is disposed outside (on the right side) the forward flow path 137.

The temperature-control fluid supplied from the supply unit 78 passes through the introduction pipe 78a and the inlet-side flow path 76e, and is supplied to the inlet 133 of the flow path 76r 3. The temperature control fluid supplied from the inlet 133 flows while being branched into the

flow paths

134 and 137. The temperature control fluid in the flow path 134 flows through the flow path 135, and is discharged from the outlet 136 to the outside of the apparatus via an outlet-side flow path (not shown) of the flange 76f and the cavity 76 c. The temperature-control fluid in the flow path 137 flows through the flow path 138, and is discharged from the outlet 139 to the outside of the apparatus through the outlet-side flow path (not shown) of the flange 76f and the cavity 76 c.

The groove 131c for forming the

flow paths

134, 135, 137, 138 is described as a groove formed in the valve body 131, but the groove is not limited to this, and a groove may be formed on the inner peripheral surface side of the cover member 132, or may be formed in both the valve body 131 and the cover member 132. That is, the flow path 76r3 (flow

paths

134, 135, 137, and 138) may be defined by a groove formed in at least one of the bottom surface (1 st surface) of the undercut 131b and the cover member 132.

(valve cartridge of example 4)

Fig. 5 (c) is an exploded perspective view of the valve body 76v4 of example 4, and fig. 5 (d) is a perspective view of the valve body 76v4 of example 4 in which the shape of the flow passage 76r4 is modeled.

The spool 76v4 has a spool body 141 and a lid member 142. A recess 141a is formed on the outer circumferential surface side of the valve body 141. The recess 141a of the valve body 141 has a dug-down portion 141b into which the lid member 142 is fitted, and a groove 141c formed in the bottom surface (1 st surface) of the dug-down portion 141 b. The cover member 142 covers the bottom surface (1 st surface) of the lower cutout 141 b. The cover member 142 is fitted to the undercut 141b, thereby forming the flow path 76r 4. That is, the bottom surface (1 st surface) of the undercut 141b and the lid member 142 define the flow path 76r 4. The valve body 141 and the cover member 142 are welded by electron beam welding or the like.

The flow path 76r4 has an inlet 143,

flow paths

144, 145, an outlet 146,

flow paths

147, 148, and an outlet 149. The

flow paths

144, 145, 147, and 148 are formed to horizontally meander. When the valve body 76v4 is fixed to the flange 76f, the inlet 143 communicates with an inlet-side flow passage 76e formed in the flange 76 f. The inlet 143 is connected to the

branched flow paths

144 and 147. The flow path 144 is a forward flow path that faces upward while reciprocating in the horizontal direction on one side (the left side in fig. 5 (d)) of the valve body 141 in the horizontal direction. The flow path 144 is connected to the flow path 145. The flow path 145 is a return flow path that reciprocates in the horizontal direction on one side of the valve body 141 in the horizontal direction and faces downward. The flow path 145 is connected to the outlet 146. The outlet 146 communicates with an outlet-side flow path formed in the flange 76f when the valve body 76v4 is fixed to the flange 76 f. The flow passage 147 is a forward flow passage that faces upward while reciprocating in the horizontal direction on the other side (the right side in fig. 5 (d)) of the valve body 141 in the horizontal direction. The flow path 148 is connected to the flow path 147. The flow path 148 is a return flow path that reciprocates in the horizontal direction on the other side of the valve body 141 in the horizontal direction and faces downward. The flow path 148 is connected to an outlet 149. The outlet 149 communicates with an outlet-side flow passage formed in the flange 76f when the valve body 76v4 is fixed to the flange 76 f. Further, on one side (the left side in fig. 5 d) of the valve body 141 in the horizontal direction, the forward flow path 144 is disposed outside (on the left side) the return flow path 145. Further, on the other side (the right side in fig. 5 b) of the valve body 141 in the horizontal direction, the forward flow passage 147 is disposed outside (on the right side) the return flow passage 148.

The temperature-control fluid supplied from the supply unit 78 passes through the introduction pipe 78a and the inlet side flow path 76e, and is supplied to the inlet 143 of the flow path 76r 4. The temperature-adjusting fluid supplied from the inlet 143 branches into the

flow paths

144 and 147 to flow. The temperature control fluid in the flow path 144 flows through the flow path 145, and is discharged from the outlet 146 to the outside of the apparatus through the outlet-side flow path (not shown) of the flange 76f and the cavity 76 c. The temperature control fluid in the flow path 147 flows through the flow path 148, and is discharged from the outlet 149 to the outside of the apparatus through an outlet-side flow path (not shown) of the flange 76f and the cavity 76 c.

The groove 141c for forming the

flow paths

144, 145, 147, and 148 is described as a groove formed in the valve body 141, but the groove is not limited thereto, and may be formed on the inner peripheral surface side of the cover member 142, or may be formed in both the valve body 141 and the cover member 142. That is, the flow path 76r4 (flow

paths

144, 145, 147, and 148) may be defined by a groove formed in at least one of the bottom surface (1 st surface) of the undercut portion 141b and the cover member 142.

Further, as in the case of the valve bodies 76v3 and 76v4 shown in examples 3 and 4, the shallow

concave portions

131a and 141a (the

undercut portions

131b and 141b and the

grooves

131c and 141c) are formed on the outer peripheral surfaces of the

valve body

131 and 141, and thus the manufacturing cost can be reduced. The

cover members

132 and 142 of examples 3 and 4 are simple in shape and can be manufactured at a low cost.

In the configuration in which the temperature control fluid is supplied from the lower portion of the valve body 141 in the circumferential direction, the heat distribution on the inner circumferential surface of the valve body 76v is a heat distribution in which the temperature is low in the lower portion in the circumferential direction and increases toward the upper portion outside in the circumferential direction. By disposing the

forward flow paths

144 and 147 outside the

return flow paths

145 and 148 as in example 4, the circumferential outside can be appropriately cooled, and the temperature difference in the heat distribution on the inner circumferential surface of the valve body 76v can be reduced.

As shown in fig. 5 (c), in the valve body 76v4 of example 4, the valve body 141 has a partition portion 141d that is not undercut at the circumferential center of the undercut portion 141 b. The cover member 142 has a notch 142d at a corresponding position. According to such a configuration, when the lid member 142 is welded to the valve body 141, the lid member 142 can be prevented from floating from the bottom surface of the undercut portion 141 b.

While the valve bodies 76v having the flow path 76r have been described above by taking the valve bodies 76v1 to 76v4 shown in fig. 4 and 5 as examples, the structure of the valve body 76v and the structure of the flow path 76r are not limited to these.

Fig. 6 is a diagram showing the positions and the number of particles adhering to the substrate W when the etching process is performed on the substrate W in the plasma processing apparatus. Fig. 6 (a) shows a case of the plasma processing apparatus 1 according to the present embodiment, and fig. 6 (b) shows a case of the plasma processing apparatus according to the reference example. The plasma processing apparatus of the reference example is different from the plasma processing apparatus 1 of the present embodiment in that the flow path 76r is not formed in the valve body 76 v. The other structures are the same as those of the plasma processing apparatus 1 of the present embodiment, and redundant description is omitted. In fig. 6, the position of the valve body 76v (the opening 12p, the opening 58p) is located downward.

In the plasma processing apparatuses of the present embodiment and the reference example, the substrate W was subjected to the etching treatment under the following conditions.

Pressure: 10 mTorr-30 mTorr

Gas species: c₄F₆/C₄F₈/NF₃/O₂

1 st high-frequency power: 5000W-6000W

2 nd high-frequency power: 10000-20000W

DC：-500W～-1000W

In addition, particles are generated in the chamber 10 during the etching process, and the generated particles adhere to the inner wall surface of the chamber 10 and the substrate W. FIG. 6 shows fine particles having a particle size of 0.035 μm or more in a state after 10 hours.

As shown in fig. 6 (b), in the plasma processing apparatus of the reference example, the number of particles on the substrate W was 293. Further, it can be confirmed that the position of the fine particles is biased toward the valve body 76v side.

In contrast, as shown in fig. 6 (a), in the plasma processing apparatus 1 of the present embodiment, the number of particles on the substrate W is 13. In addition, the offset of the position where the fine particles are not visible can be confirmed.

As described above, according to the plasma processing apparatus 1 of the present embodiment, the flow path 76r through which the temperature control fluid flows is formed in the valve body 76 v. With such a configuration, the heat of the valve body 76v is radiated to the temperature control fluid, and the temperature of the inner peripheral surface of the valve body 76v can be reduced. Therefore, the control unit 80 controls the heater 76h to adjust the temperature of the valve body 76 v.

In addition, the control portion 80 controls the temperature of the spool 76v so as to reduce the temperature difference between the member 58 and the spool 76 v. According to the plasma processing apparatus 1 of the present embodiment, the temperature difference on the cylindrical surface formed by the inner circumferential surface of the member 58 and the inner circumferential surface of the valve body 76v can be reduced. This can improve the uniformity of the temperature in the circumferential direction of the internal space 10 s.

Further, by lowering the temperature of the valve body 76v, particles adhere to the inner peripheral surface of the valve body 76 v. That is, the particles in the internal space 10s are captured by the inner peripheral surface of the valve body 76v, and the number of particles on the substrate W can be reduced. Similarly, by lowering the temperature of the member 58, the particles adhere to the inner peripheral surface of the member 58. That is, the particles in the internal space 10s are captured by the inner peripheral surface of the member 58, so that the number of particles on the substrate W can be reduced.

That is, according to the plasma processing apparatus 1 of the present embodiment, the number of particles adhering to the substrate W can be reduced, and the position offset of the particles can be reduced.

Next, a method of setting the flow rate of the dry air (temperature control fluid) supplied to the valve element 76v by the supply unit 78 and the temperature of the valve element 76v will be described with reference to fig. 7.

FIG. 7 is a graph showing the relationship between the temperature of the valve element 76v and the operation amount (MV: Manipulated Variable) of the heater 76 h. The left-hand graphs (fig. 7 (a) and 7 (b)) show the case where the flow rate of the dry air is 30L/min and the set temperature of the valve element 76v is 120 ℃. Here, the set temperature of the valve element 76v is the temperature of a heater 76h that heats the valve element 76 v. The graphs in the center row (fig. 7 c and 7 d) show the case where the flow rate of the dry air is 60L/min and the set temperature of the valve element 76v is 120 ℃. The right-hand graphs (fig. 7 (e) and 7 (f)) show the case where the flow rate of the dry air is 60L/min and the set temperature of the valve element 76v is 100 ℃. The upper line graphs (fig. 7 (a), 7 (c), and 7 (e)) are graphs showing temporal changes in the temperature of the valve body 76v during the etching process. The lower graphs (fig. 7 (b), 7 (d), and 7 (f)) are graphs showing temporal changes in the temperature of the valve element 76v and the operation amount of the heater 76h when the operation amount of the heater 76h is controlled so that the temperature of the valve element 76v becomes the set temperature during the etching process. The temperature T1 is the temperature of the member 58 when the valve element 76v closes the opening 58p of the member 58, and the temperature T2 is the temperature of the member 58 when the valve element 76v opens the opening 58p of the member 58.

When the flow rate of the dry air is 30L/min and the set temperature of the valve element 76v is 120 ℃, as shown in fig. 7 (a), the temperature of the valve element 76v exceeds the temperature T1 and the cooling capacity of the valve element 76v is insufficient. As shown in fig. 7 (b), it is shown that the temperature of the valve body 76v is not kept constant even if the operation amount of the heater 76h is 0.

When the flow rate of the drying air is set to 60L/min and the set temperature of the valve element 76v is set to 100 ℃, the temperature of the valve element 76v is maintained within the range of the temperature T1 to the temperature T2 as shown in fig. 7 (e). However, as shown in fig. 7 (f), it is shown that the temperature of the valve body 76v is not kept constant even if the operation amount of the heater 76h is 0.

On the other hand, when the flow rate of the dry air is set to 60L/min and the set temperature of the valve element 76v is set to 120 ℃, the temperature of the valve element 76v is maintained within the range of the temperature T1 to the temperature T2 as shown in fig. 7 (c). As shown in fig. 7 (d), it is shown that the temperature of the valve body 76v can be kept constant within a range in which the operation amount of the heater 76h can be controlled.

In this way, the flow rate of the drying air and the set temperature of the valve element 76v can be determined so that the temperature of the valve element 76v is within the range of the temperature T1 to the temperature T2 and the temperature of the valve element 76v can be kept constant within the range in which the operation amount of the heater 76h can be controlled.

Next, simulations were performed for the valve bodies 76v1 to 76v4 of examples 1 to 4. Fig. 8 is a diagram showing an example of simulation results of temperature distributions in the valve bodies 76v1 to 76v4 of examples 1 to 4. Fig. 9 is a diagram showing an example of simulation of the temperatures of the valve body 76v and the flange 76f and the pressures at the inlet and the outlet of the flow path when the dry Air flow rate (Air flow rate) is changed in the valve bodies 76v1 to 76v4 of examples 1 to 4. The simulation was performed such that the valve element 76v was heated by the heating value 120W by the heater 76h in the IDLE (IDLE) state, and the valve element 76v was heated by the heat input value 120W from the plasma in the PROCESS (PROCESS) state.

The upper layer in fig. 8 shows an example of a simulation result of the temperature distribution in the case where the dry air is not supplied at the time of the process (0L/min). The lower layer of fig. 8 shows an example of a simulation result of the temperature distribution in the case where the dry air is supplied during the process (20L/min). In fig. 8, the temperature difference between the maximum temperature and the minimum temperature of the valve body 76v is also indicated as a temperature distribution Δ.

As shown by comparing the upper and lower stages of fig. 8, in any of the valve bodies 76v1 to 76v4 of examples 1 to 4, the valve bodies 76v1 to 76v4 are cooled by supplying dry air. As shown in the upper layer of fig. 8, when dry air is not supplied during the process, the temperature distributions Δ of the valve bodies 76v1 to 76v4 in examples 1 to 4 are substantially equal. Further, as shown in the lower layer of fig. 8, when the dry air is supplied during the process, the temperature distribution Δ of the valve 76v4 of the 4 th example is smaller than the temperature distributions Δ of the other valve elements 76v1 to 76v 3.

The upper layer of fig. 9 shows the temperatures [ ° c ] of the valve body 76v and the flange 76f when the dry Air flow rate (Air flow rate) is changed to 0L/min, 10L/min, 20L/min, and 30L/min at no load of the valve body 76v1 to 76v4 of examples 1 to 4. The middle part of fig. 9 shows the temperatures [ ° c ] of the valve body 76v and the flange 76f when the dry Air flow rate (Air flow rate) is changed at 0L/min, 10L/min, 20L/min, and 30L/min in the process of the valve body 76v 1-76 v4 of examples 1 to 4. The lower layer of fig. 9 shows pressures [ MPa ] at the INLET (entrance) and the OUTLET (exit) and pressure loss as a pressure difference therebetween when the dry Air flow rate (Air flow rate) is changed by 10L/min, 20L/min, and 30L/min in the valve bodies 76v1 to 76v4 of examples 1 to 4. In addition, for the pressure loss, in the case where the pressure difference between the inlet and the outlet is sufficiently small, it is represented by "-".

As shown in the upper and middle stages of fig. 9, the valve bodies 76v1 to 76v4 of the 1 st to 4 th examples all have the same cooling capacity. As shown in the lower layer of fig. 9, the pressure loss is sufficiently small, on the order of several Pa.

While the embodiments of the substrate processing apparatus and the like have been described above, the present disclosure is not limited to the above embodiments and the like, and various modifications and improvements can be made within the scope of the present disclosure described in the claims.

The Plasma processing apparatus according to the present embodiment can be applied to any of ALD (Atomic Layer Deposition) apparatuses, CCP (Capacitively Coupled Plasma), ICP (Inductively Coupled Plasma), Radial Line Slot Antenna (Radial Line Slot Antenna), ECR (Electron Cyclotron Resonance Plasma) and HWP (Helicon Wave Plasma). Although the plasma processing apparatus is described as an example of the substrate processing apparatus, the substrate processing apparatus may be an apparatus that performs a predetermined process (for example, a film formation process, an etching process, or the like) on a substrate, and is not limited to the plasma processing apparatus. For example, a CVD apparatus is also possible.

In this specification, a wafer (semiconductor wafer) W is described as an example of a substrate. However, the substrate is not limited to this, and various substrates used for an LCD (Liquid Crystal Display) and an FPD (Flat Panel Display), a photomask, a CD substrate, a printed circuit board, and the like may be used.

The valve body 76v may have a heat exchange promoting member (not shown) for increasing a contact area with the temperature control fluid flowing through the flow passage 76 r. For example, the heat exchange promoting member is provided as a protrusion protruding from the inner wall surface of the valve body 76v into the flow path 76 r. In other words, the heat exchange promoting member is disposed so as to block the flow of the temperature control fluid flowing through the flow path 76 r. The heat exchange promoting member can increase the contact area with the temperature control fluid flowing through the flow passage 76r, and promote heat exchange between the valve element 76v and the temperature control fluid.

Further, the valve body 76v includes: a housing member having an interior space; and a partition member forming a flow path 76r in the inner space of the housing member. For example, in the valve body 76v1 of example 1 shown in fig. 4 (a), the valve body 111 and the base portion 112a of the flow passage forming member 112 form a housing member having a concave portion 111a as an internal space, and the circular arc plate portion 112b of the flow passage forming member 112 forms a partition member. The same applies to the valve body 76v2 of example 2 shown in fig. 4 (c). For example, in a valve body 76v3 of example 3 shown in fig. 5 (a), a valve body 131 and a lid member 132 form a housing member, and a portion of a lower cutout 131b where a groove 131c is not formed forms a partition member. The same applies to the valve body 76v4 of example 4 shown in fig. 5 (c).

The heat exchange promoting member provided in the flow path 76r may be formed so as to support the casing member from inside. This ensures the strength and rigidity of the hollow valve body 76 v. The heat exchange promoting member may have, for example, a mesh or columnar structure, or may have a lattice structure (lattice structure). The shape and arrangement of the heat exchange promoting member are not limited to these.

In addition, the heat exchange promoting member may be integrally formed with at least one of the housing member and the partition member. For example, in the valve body 76v1 of example 1 shown in fig. 4 (a), the heat exchange promoting member may be formed integrally with the arc plate portion 112b as the partition member. In the valve body 111 as the housing member, the heat exchange promoting member may be formed integrally with the inner wall surface of the recess 111 a. The same applies to the valve body 76v2 of example 2 shown in fig. 4 (c). For example, in the valve body 76v3 of example 3 shown in fig. 5 (a), the heat exchange promoting member may be formed integrally with the valve body 131 as the housing member and the partition member. Further, the heat exchange promoting member may be formed integrally with the cover member 132 as the housing member. The same applies to the valve body 76v4 of example 4 shown in fig. 5 (c). This can reduce the number of components. The housing member, the partition member, and the heat exchange promoting member of the valve body 76v may be integrally formed.

The valve body 76v may be manufactured by a 3D printing technique or an Additive Manufacturing (Additive Manufacturing) technique. Specifically, a lamination technique using a metal material can be used. For example, a shaping technique of sintering a metal powder by irradiating the metal powder with a laser beam or an electron beam to perform shaping, a shaping technique of melting and accumulating a material by a laser beam or an electron beam while supplying a metal powder or a wire, and the like can be used. Further, these shaping methods are examples, and are not limited thereto.

Claims

1. A substrate processing apparatus includes:

a chamber having a plasma processing space, a sidewall of the chamber having an opening for transferring a substrate into the plasma processing space; and

a shutter disposed inside the side wall to open and close the opening,

the shutter has a flow path for a temperature-adjusting fluid.

2. The substrate processing apparatus according to claim 1,

the shutter has:

a body having a 1 st face; and

a cover member covering the 1 st surface,

the 1 st surface and the cover member define the flow path.

3. The substrate processing apparatus according to claim 2,

the flow path is defined by a groove formed in at least one of the 1 st surface and the cover member.

4. The substrate processing apparatus according to any one of claims 1 to 3,

the substrate processing apparatus includes:

a fluid supply unit that supplies the temperature-controlled fluid to the flow path;

a heater that heats the shutter; and

a control device for controlling the operation of the motor,

the control device controls the heater so as to control the temperature of the shutter.

5. The substrate processing apparatus according to claim 4,

the substrate processing apparatus further comprises an annular protective member defining the plasma processing space,

the control device is configured to control the temperature of the shutter so as to reduce a temperature difference between the annular protection member and the shutter.

6. The substrate processing apparatus according to any one of claims 1 to 5,

the flow path has:

an inlet;

an outlet;

a to flow path that meanders horizontally from the inlet; and

a return flow path horizontally meandering toward the outlet.

7. The substrate processing apparatus according to claim 6,

the forward flow path is disposed outside the return flow path.

8. The substrate processing apparatus according to claim 1,

the shutter has:

a body having a recess; and

a path module adapted within the recess,

the recess and the path block define the flow path.

9. The substrate processing apparatus according to any one of claims 1 to 8,

the shutter has at least 1 protrusion disposed in the flow path.

10. The substrate processing apparatus according to any one of claims 1 to 9,

the shutter is shaped using 3D printing techniques or additive manufacturing techniques.