TWI220786B - Supporting structure - Google Patents
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- TWI220786B TWI220786B TW091120768A TW91120768A TWI220786B TW I220786 B TWI220786 B TW I220786B TW 091120768 A TW091120768 A TW 091120768A TW 91120768 A TW91120768 A TW 91120768A TW I220786 B TWI220786 B TW I220786B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- Microelectronics & Electronic Packaging (AREA)
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
^220786^ 220786
【發明領域】 本發明係有關於一種適用在半導體製程中化學氣相沈 積機台，在反應爐内支撐基板用的支撐結構，且關於一種 配置該種支撐結構之機台。 【發明背景】 化學氣相沈積（Chemical Vapor Deposition，簡稱 CVD)疋一種利用化學反應的方式，在反應爐内將反應物 (通常為氣體）生成固態的生成物沈積在基板表面的一種薄 膜沈積技術，化學氣相沈積為半導體製程中最重要且主要 的薄膜沈積方法。 如第1圖所示’係為習知化學氣相沈積機台之示意 圖’一玻璃基板10放置於機台12上，藉由一機械手臂14傳 遞移動玻璃基板10，此一化學氣相沈積機台是位於加熱反 應爐之内。以目前3· 5代液晶顯示器（LCD)製程而言，破墙 基板10的長度約為650mm〜750mm、寬度約為550mm〜650 mm。由圖所示，玻璃基板1〇因自重將會產生彎曲的現象， 因而造成機械手臂1 4無法進行傳送的動作，且此情況隨著 玻璃基板的尺寸擴大，基板彎曲的情況將會更嚴重。 有鑑於此，為了防止玻璃基板彎曲而影響基板傳送， 目前的技術乃在機台上設置支撐結構，用以支撐基板，I 其不會因自重而彎曲。請參見第2圖，其乃設置有支撑結 構26之化學氣相沈積機台22之示意圖。如圖所示，玻填基 板2 0是放置於機台22上，且機台22上設置有數個支採結構 26。藉由支撐結構2 6的支撐，玻璃基板20將不會因自重而[Field of the Invention] The present invention relates to a supporting structure for a chemical vapor deposition machine used in a semiconductor manufacturing process to support a substrate in a reaction furnace, and to a machine configured with such a supporting structure. [Background of the Invention] Chemical Vapor Deposition (CVD): a thin film deposition technology that uses chemical reactions to deposit reactants (usually gases) into solid products on a substrate surface in a reaction furnace Chemical vapor deposition is the most important and main thin film deposition method in semiconductor manufacturing. As shown in Fig. 1 'is a schematic diagram of a conventional chemical vapor deposition machine' A glass substrate 10 is placed on the machine 12 and the glass substrate 10 is transferred by a robot arm 14. This chemical vapor deposition machine The stand is located inside the heating reactor. In terms of the current 3 · 5 generation liquid crystal display (LCD) manufacturing process, the length of the wall-breaking substrate 10 is approximately 650 mm to 750 mm and the width is approximately 550 mm to 650 mm. As shown in the figure, the glass substrate 10 will be bent due to its own weight, which will cause the robot arm 14 to be unable to perform the transfer operation. In addition, as the size of the glass substrate increases, the situation of the substrate bending will become more serious. In view of this, in order to prevent the glass substrate from being bent and affect the substrate transfer, the current technology is to provide a support structure on the machine to support the substrate, which will not bend due to its own weight. Please refer to FIG. 2, which is a schematic diagram of a chemical vapor deposition machine 22 provided with a support structure 26. As shown in the figure, the glass-filled substrate 20 is placed on the machine 22, and a plurality of support structures 26 are provided on the machine 22. With the support of the support structure 26, the glass substrate 20 will not be affected by its own weight.
1220786 五、發明說明（2) 彎曲，機械手臂24便可順利移動玻璃基板20。 此時’支#結構的形狀及材質就非常的重要。習知的 支撐結構，通常係利用陶瓷或不銹鋼材質製成。以使用陶 瓷製成的支撐結構來說，整個支樓結構是陶瓷材料一體成 形，且支撐結構上端為一平面，此種支撐結構的缺點在於 因為材料為陶瓷，使得整體之重量較輕，因此當玻璃基板 移動時，支撐結構容易被靜電吸附而與玻璃基板同時移 動，將造成玻璃基板的破片問題，又支撐結構與玻璃基板 的接觸面為一平面，將會增加玻璃基板的刮傷範圍。以使 用不銹鋼材質製成的支撐結構來說，由於整個化學氣相沈 積機台是設置於高溫的反應爐之内，不銹鋼在高溫時會與 玻璃發生反應而使玻璃基板損傷。由於使用陶瓷或不銹鋼 材質製成的支撐結構，均非常容易刮傷玻璃基板，或是在 玻璃基板背面留下痕跡，而當玻璃基板到後段製程時，因 為需要切割，當切割線經過如上述之刮傷及痕跡時，極容 易產生裂痕，將會造成玻璃基板的破裂，使得產能及良 大幅下降。 【發明概述】 因此，本發明之支撐結構目的就是一種能夠減少 板造成刮傷的支撐結構，進而提高產能以及提升良率。 用時，本發明之支撐結構將放置於反應爐内既定之一桿^ (力圖上未顯示）上，由支撐部與基板接觸，給予基板一支撐 根據本發明之支撐結構，包含一基座， 一支撐部，—1220786 V. Description of the invention (2) The glass substrate 20 can be smoothly moved by the robot arm 24 by bending. At this time, the shape and material of the ‘支 #’ structure is very important. Conventional support structures are usually made of ceramic or stainless steel. In the case of supporting structures made of ceramics, the entire supporting structure is made of ceramic materials, and the upper end of the supporting structure is a flat surface. The disadvantage of this supporting structure is that the material is ceramic, which makes the overall weight lighter. When the glass substrate is moved, the support structure is easy to be electrostatically adsorbed and moves with the glass substrate at the same time, which will cause the problem of fragmentation of the glass substrate. The contact surface between the support structure and the glass substrate is a flat surface, which will increase the scratch range of the glass substrate. In the case of a support structure made of stainless steel, since the entire chemical vapor deposition machine is set in a high-temperature reaction furnace, stainless steel can react with glass at high temperatures and damage the glass substrate. Because of the support structure made of ceramic or stainless steel, it is very easy to scratch the glass substrate or leave marks on the back of the glass substrate. When the glass substrate is processed in the later stage, because of the need to cut, when the cutting line passes through as described above When scratches and marks, cracks are extremely likely to occur, which will cause the glass substrate to crack, which will greatly reduce the productivity and yield. [Summary of the Invention] Therefore, the purpose of the support structure of the present invention is to support the structure which can reduce the scratch caused by the plate, thereby improving the productivity and the yield. In use, the support structure of the present invention will be placed on a predetermined rod in the reaction furnace (not shown on the force chart), and the support portion will contact the substrate to give the substrate a support. The support structure according to the present invention includes a base. A support,-
122〇786 五、發明說明（3) 時，J支；：ί = 為：J之凸粒。在組裝支撐結構 合。 、基座上，再用固定部將基座與支撐部耦 及-nm:實施例，包含-基座，-支樓部，以 有一卡槽，支/部為—圓頂狀凸粒，具 將扣：iH 的孔洞後1出於基座上部，再 卡固。卡 撐卡槽，則支撐部便可藉由扣環與基座 根據本發明之另一實施例，包含一基座，-支撐部， 部ϋ蓋。基座上具有—凹槽以及—第―固定部，支撐 二^一圓頂狀凸粒，上蓋具有第二固定部。在組裝支撐結 時’將支撑部放置於基座上的凹槽内，在將上蓋蓋上使 第一固定部與第二固定部耦合。 【發明之詳細說明】 為使本發明之上述及其他目的、特徵和優點能更明顯 懂，下文特舉數個具體之較佳實施例，並配合所附圖式 做詳細說明。 【實施例】 根據本發明之支撐結構’包含一基座，設置於機台 上，一支撐部，設置於基座上，用以支撐放置於機台上之 玻璃基板；一固定部，用以將支撐部固定設置於基座上， 以形成支撐玻璃基板的支撐結構。其中支撐部大體為圓頂 之凸粒。在組裝支撐結構時，將支撐部設置於基座上，再122〇786 V. In the description of the invention (3), J branch: ί = is: J's convex particles. The assembly support structure is closed. On the pedestal, the fixing part is used to couple the pedestal and the support part with -nm: The embodiment includes-the pedestal and-the branch part, with a card slot, and the branch / part is a dome-shaped convex particle, with Put the buckle: iH's back hole 1 out of the upper part of the base, and then fix it. According to another embodiment of the present invention, the supporting portion can include a base, a supporting portion, and a cover. The base is provided with a -groove and a -first fixing portion, which supports the two dome-shaped convex particles, and the upper cover has a second fixing portion. When assembling the support knot ', the support portion is placed in a groove on the base, and the first fixing portion and the second fixing portion are coupled to the upper cover. [Detailed description of the invention] In order to make the above and other objects, features, and advantages of the present invention more comprehensible, several specific preferred embodiments are given below and described in detail in conjunction with the accompanying drawings. [Embodiment] The support structure according to the present invention includes a base provided on the machine, a support portion provided on the base to support a glass substrate placed on the machine, and a fixing portion for The supporting portion is fixed on the base to form a supporting structure for supporting the glass substrate. Among them, the support portion is generally domed convex particles. When assembling the supporting structure, set the supporting part on the base, and then
0632-8278twf(η);AU91053;CAT.ptd 第6頁 12207860632-8278twf (η); AU91053; CAT.ptd Page 6 1220786
用固定部將基座與支#㈣合。使料，支#結構將放置 於反應爐内既定之一桿件（圖上未顯示）上，由支撐部盘 板接觸，給予基板一支撐力。 〃土 實施例一： 參見第3a和3b圖，詳細說明依據本發明之第一個 例之支撐結構30。如圖所示，一支揮結構3〇包括一基座 32，-支撐部34，—固^部36，在本實施例中為—扣環。 如第3a和3b圖所示，基座32上具有一孔洞，孔洞 的截面積小於下部的截面積’支撐部34為一圓頂狀凸粒， 其上具有卡槽341，扣環為一標準c型扣環。在組裝支撐結 構時，將支撐部34由基座32内部穿過基座的孔洞後，突出 於基座32上部，再將扣環36卡入支撐部34上之卡槽341 中，則支撐部34便可藉由扣環36與基座32卡固，形成一支 ^構30。使用時’將支樓結構3〇設置於反應爐内既定之 一桿件（圖上未顯示）上，由支撐結構3〇之支撐部34與 接觸，給予基板一支撐力。 其中，上述的基座32其材質為不銹鋼，因而使得整個 支撐結構有一定之重量，就可避免因靜電吸附而造 片問題。 ^ 又，上述之支撐部34的材質係為陶瓷，且圓頂式的設 2將減少與玻璃基板的接觸面，進而減少玻璃基板的刮傷 範圍。 ^ 另外’上述之支撐部34亦可為工程塑膠（PBI)或是石 英’亦可以是可耐熱且不易與玻璃產生反應之材質。Use the fixing part to join the base with the support #. The material and support structure will be placed on a predetermined rod (not shown in the figure) in the reaction furnace and contacted by the support plate to give the substrate a supporting force. Vermiculite Example 1: Referring to Figures 3a and 3b, the supporting structure 30 according to the first example of the present invention will be described in detail. As shown, a swing structure 30 includes a base 32, a support portion 34, and a solid portion 36, which in this embodiment is a retaining ring. As shown in Figures 3a and 3b, there is a hole in the base 32, and the cross-sectional area of the hole is smaller than the cross-sectional area of the lower portion. Buckle. When assembling the support structure, after the support portion 34 passes through the hole in the base from the inside of the base 32, it protrudes from the upper portion of the base 32, and then snaps the buckle 36 into the groove 341 on the support portion 34. 34, the buckle 36 and the base 32 can be fixed to form a frame 30. In use ', the supporting structure 30 is set on a predetermined member (not shown in the figure) in the reaction furnace, and the supporting portion 34 of the supporting structure 30 is in contact with it to give the substrate a supporting force. Among them, the above-mentioned base 32 is made of stainless steel, so that the entire supporting structure has a certain weight, and the problem of film formation due to electrostatic adsorption can be avoided. ^ Moreover, the material of the above-mentioned support portion 34 is ceramic, and the dome-shaped design 2 will reduce the contact surface with the glass substrate, thereby reducing the scratching range of the glass substrate. ^ In addition, the above-mentioned supporting portion 34 may be engineering plastic (PBI) or stone, or it may be a material that is heat-resistant and does not easily react with glass.
1220786 五、發明說明（5) 、土上，^知，依本發明之支撐結構其基座32與支撐部 3炎U ϋ:可ί據不同的工作環境選擇最適合的材質 以降低製：i太不2整體用同一材質一體成％，不僅可 明使用-扣環36來卡固基座32與支撐部34，而不使用亡 絲釘的理由在於省去了螺合螺絲的步驟，且本發明之柃 結構的體積甚小，鎖合螺絲亦非常之麻煩。 牙 實施例二： 參見第4a和4b圓，詳細說明依據本發明之第二 例之支樓結構40。如囷所示，一支撐結構4〇包含一基座1220786 V. Description of the invention (5) On the ground, according to the support structure of the present invention, the base 32 and the support portion 3 of the support structure can be selected according to different working environments to reduce the system: i Too much 2. The whole is made of the same material as a whole. It is not only clear that the use of the buckle 36 to fix the base 32 and the support portion 34, but the reason for not using the dead screw is that the step of screwing the screws is omitted, and The structure of the invention is very small, and the locking screw is very troublesome. Example 2: Referring to circles 4a and 4b, a branch structure 40 according to a second example of the present invention will be described in detail. As shown by 囷, a support structure 40 includes a base
42，一固定部43，在本實施例中為一具有螺紋的上蓋，一 支撐部44。 如第4a和4b圖所示，基座42上具有一凹槽421以及一 第一固定部422 ,支撐部44為一圓頂狀凸粒，上蓋43具有 第二固定部432。在組裝支撐結構3〇時，將支撐部44放置 於基座42上的凹槽421内，再將上蓋43上的第二固定部432 與基座上的第一固定部422搞合。使用時，將支標結構4〇 設置於反應爐内既定之一桿件（圖上未顯示）上，由支撐結 構40之支樓部44與基板接觸’給予基板一支樓力。 其中’上述之第一固定部為公螺紋，該第二固定部為 母螺紋，亦或是上述之第一固定部為母螺紋，該第二固定 部為公螺紋，該第一固定部與第二固定部螺合。 又’上述的基座42與上蓋43的材質為不銹鋼，因而使 传整個支撐結構有一定之重置’就可避免因靜電吸附而造42, a fixing portion 43, in this embodiment, an upper cover having a thread, and a supporting portion 44. As shown in FIGS. 4a and 4b, the base 42 has a groove 421 and a first fixing portion 422, the supporting portion 44 is a dome-shaped bump, and the upper cover 43 has a second fixing portion 432. When assembling the supporting structure 30, the supporting portion 44 is placed in the groove 421 on the base 42, and then the second fixing portion 432 on the upper cover 43 and the first fixing portion 422 on the base are engaged. In use, the supporting structure 40 is set on a predetermined member (not shown in the figure) in the reaction furnace, and the supporting portion 40 of the supporting structure 40 is in contact with the substrate to give the substrate a building force. Wherein the above-mentioned first fixing portion is a male thread, the second fixing portion is a female thread, or the above-mentioned first fixing portion is a female thread, the second fixing portion is a male thread, and the first fixing portion and the first The two fixing parts are screwed together. Moreover, the material of the above-mentioned base 42 and the upper cover 43 is stainless steel, so that the entire supporting structure is reset to a certain extent, so that it can be avoided due to electrostatic adsorption.
1220786 五、發明說明（6) 成之破片問題。 又’上述之 計將減少與玻璃 範圍。 另外，上述 英’亦可以是可 由上述可知 44分離的設計， 來製作支撐部， 以降低製作成本 明使用一第一固 支撐部44的 基板的接觸 之支撐部4 4 耐熱且不易 ’依本發明 可根據不同 不需要整體 ，同時可以 定部421及-與支撐部4 4，則不需要使用 雖然本發明已以數個較 用以限定本發明，任何熟習 之精神和範圍内，仍可作些 之保護範圍當視後附之申請 材質係為陶瓷，且圓頂式的設 面’進而減少玻璃基板的刮傷 亦可為工程塑膠（PBI)或是石 與玻璃產生反應之材質。 之支撐結構其基座4 2與支撐部 的工作環境選擇最適合的材質 用同一材質一體成形，不僅可 提供便利的更換方式。又本發 -第二固定部432來卡固基座42 螺絲釘。 佳實施例揭露如上，然其並非 此項技藝者，在不脫離本發明 許的更動與潤飾，因此本發明 專利範圍所界定者為準月1220786 Fifth, the description of the invention (6) The problem of fragmentation. Again 'the above measures will reduce the range with glass. In addition, the above-mentioned "can also be a design that can be separated from the above-mentioned 44" to make the support portion to reduce the manufacturing cost. The support portion 4 4 that uses the substrate of a first solid support portion 44 is heat-resistant and not easy. Depending on the difference, the whole is not required, and the fixed portion 421 and the support portion 44 can be used at the same time, but it is not necessary to use it. Although the present invention has been used to define the present invention with several comparisons, it can still be done within the spirit and scope of any familiarity. The scope of protection is considered as the attached application material is ceramic, and the dome-shaped surface is used to reduce scratches on the glass substrate. It can also be engineering plastic (PBI) or a material that reacts with stone and glass. For the supporting structure, the base 4 2 and the working environment of the supporting part are selected with the most suitable material. The same material is integrally formed, which not only provides a convenient replacement method. In addition, the second fixing portion 432 fixes the screws of the base 42. The best embodiment is disclosed as above, but it is not the artist, and it will not deviate from the modifications and retouches of the present invention. Therefore, the scope defined by the patent scope of the present invention is the standard month.
1220786 圖式簡單說明 第1圖係表示一種習知之化學氣相沈積機台示意圖。 第2圖係表示一種習知配置有支撐結構之化學氣相沈 積機台示意圖。 第3a圖係表示根據本發明之第一實施例之支撐結構示 意圖。 第3b圖係表示根據本發明之第一實施例之支撐結構分 解圖。 第4a圖係表示根據本發明之第二實施例之支撐結構示 意圖。 第4b圖係表示根據本發明之第二實施例之支撐結構分 解圖。 【符號說明】 1 0 20〜玻璃基板 1 2 22〜機台 1 4 24 〜機械手臂 26 30 40 〜支撐結構 32 42 〜基座 34 44 〜支撐部 341〜卡槽 36〜扣環 421〜凹槽 422 〜第一固定部 43〜上蓋 432 〜第二固定部1220786 Brief Description of Drawings Figure 1 shows a schematic diagram of a conventional chemical vapor deposition machine. Figure 2 is a schematic diagram of a conventional chemical vapor deposition machine equipped with a supporting structure. Fig. 3a is a schematic view showing a supporting structure according to the first embodiment of the present invention. Fig. 3b is an exploded view showing a supporting structure according to the first embodiment of the present invention. Fig. 4a is a schematic view showing a supporting structure according to a second embodiment of the present invention. Fig. 4b is an exploded view showing a supporting structure according to a second embodiment of the present invention. [Symbol description] 1 0 20 to glass substrate 1 2 22 to machine 1 4 24 to robot arm 26 30 40 to support structure 32 42 to base 34 44 to support portion 341 to card slot 36 to buckle 421 to groove 422 to first fixing portion 43 to upper cover 432 to second fixing portion
0632-8278twf(n);AU91053;CAT.ptd 第10頁0632-8278twf (n); AU91053; CAT.ptd Page 10
Claims (1)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW091120768A TWI220786B (en) | 2002-09-11 | 2002-09-11 | Supporting structure |
| US10/409,984 US20040046096A1 (en) | 2002-09-11 | 2003-04-08 | Support apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW091120768A TWI220786B (en) | 2002-09-11 | 2002-09-11 | Supporting structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TWI220786B true TWI220786B (en) | 2004-09-01 |
Family
ID=31989723
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW091120768A TWI220786B (en) | 2002-09-11 | 2002-09-11 | Supporting structure |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US20040046096A1 (en) |
| TW (1) | TWI220786B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080105201A1 (en) * | 2006-11-03 | 2008-05-08 | Applied Materials, Inc. | Substrate support components having quartz contact tips |
| JP6321509B2 (en) * | 2014-09-24 | 2018-05-09 | 東京エレクトロン株式会社 | Substrate processing apparatus and substrate mounting unit manufacturing method |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3757733A (en) * | 1971-10-27 | 1973-09-11 | Texas Instruments Inc | Radial flow reactor |
| US5589003A (en) * | 1996-02-09 | 1996-12-31 | Applied Materials, Inc. | Shielded substrate support for processing chamber |
| DE19819732C1 (en) * | 1998-05-02 | 1999-08-26 | Schott Glas | Mounting for gas burner into cooker surface |
| US6318957B1 (en) * | 1998-07-10 | 2001-11-20 | Asm America, Inc. | Method for handling of wafers with minimal contact |
| US6589352B1 (en) * | 1999-12-10 | 2003-07-08 | Applied Materials, Inc. | Self aligning non contact shadow ring process kit |
| US6494955B1 (en) * | 2000-02-15 | 2002-12-17 | Applied Materials, Inc. | Ceramic substrate support |
| EP1174910A3 (en) * | 2000-07-20 | 2010-01-06 | Applied Materials, Inc. | Method and apparatus for dechucking a substrate |
| US20020076166A1 (en) * | 2000-12-20 | 2002-06-20 | Cheng-Sheng Hsu | Optical fiber junction |
| US6528767B2 (en) * | 2001-05-22 | 2003-03-04 | Applied Materials, Inc. | Pre-heating and load lock pedestal material for high temperature CVD liquid crystal and flat panel display applications |
| US6623225B1 (en) * | 2002-04-19 | 2003-09-23 | Asm International N.V. | Expandable bolt and use for fragile parts |
| US6758603B2 (en) * | 2002-07-08 | 2004-07-06 | Hon Hai Precision Ind. Co., Ltd. | Optical connector assembly |
| US6716287B1 (en) * | 2002-10-18 | 2004-04-06 | Applied Materials Inc. | Processing chamber with flow-restricting ring |
-
2002
- 2002-09-11 TW TW091120768A patent/TWI220786B/en not_active IP Right Cessation
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2003
- 2003-04-08 US US10/409,984 patent/US20040046096A1/en not_active Abandoned
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| US20040046096A1 (en) | 2004-03-11 |
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