JP2005225758A - 光触媒コーティングを備えた基材 - Google Patents
光触媒コーティングを備えた基材 Download PDFInfo
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- JP2005225758A JP2005225758A JP2005071719A JP2005071719A JP2005225758A JP 2005225758 A JP2005225758 A JP 2005225758A JP 2005071719 A JP2005071719 A JP 2005071719A JP 2005071719 A JP2005071719 A JP 2005071719A JP 2005225758 A JP2005225758 A JP 2005225758A
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Classifications
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- C—CHEMISTRY; METALLURGY
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Abstract
【解決手段】 本発明は、光触媒特性を有するコーティングが少なくとも1つの面の少なくとも一部に施された、ガラス、セラミック、又はガラス質セラミックであり、少なくとも部分的に結晶質であるアナターゼ形の酸化チタンを含み、そして該コーティングは親水性であり、光照射に曝された後に5°未満の水との接触角を有し、結晶質酸化チタンは0.5〜60nmの平均サイズを有する結晶子の形態である、コーティングした基材に関する。
【選択図】 図1
Description
(1)光触媒特性を有するコーティングが少なくとも1つの面の少なくとも一部に施された、ガラス、セラミック、又はガラス質セラミックであり、少なくとも部分的に結晶質であるアナターゼ形の酸化チタンを含み、そして該コーティングは親水性であり、光照射に曝された後に5°未満の水との接触角を有し、結晶質酸化チタンは0.5〜60nmの平均サイズを有する結晶子の形態である、コーティングした基材;
(2)コーティングが5〜100nmの厚さを有する(1)に記載のコーティングした基材;ならびに
(3)その少なくとも1つの層が(1)に記載のコーティングした基材である多層ガラス、である。
また、特に、アナターゼ形の結晶の場合、基材上で成長するTiO2 結晶の向きは、酸化チタンの触媒挙動に影響を有し、光触媒を顕著に促進する好適な配向(1,1,0)が存在する。
1.チタン前駆体の分解
1)熱分解法の液体熱分解、粉末熱分解、化学蒸着(CVD)として知られる気相中での熱分解など
2)ゾルゲルを用いた技術の浸漬、セルコーティングなど
2.真空技術
反応性又は非反応性の陰極スパッタリングなどが挙げられる。
CF3 −(CF2 )n −(CH2 )m −SiX3
(式中nは0〜12、mは2〜5、Xは加水分解基)のシランを主成分にしたものの層が挙げられる。
1.より高活性な光触媒表面積を形成することができ、したがって、より高い光触媒活性を誘起することができる。
2.濡れに直接的効果を有する。粗さは実際に濡れ性を高める。滑らかな親水性表面は、粗くされるとより一層親水性になることができる。この場合、「粗さ」とは、表面の粗さと、層の厚さの少なくとも一部における層の多孔性によって生じる粗さの双方を意味するものと理解すべきである。
例1〜3は、液相熱分解法を用いて堆積させたコーティング3に関する。この操作は、フロートバス式チャンバーの出口のフロートガラスの横と上に配置した適切な分配ノズルを用い、連続的に行うことができる。この例においては、既に所定の寸法に切断した基材に相対して配置した可動性ノズルを用いて操作を非連続的に行い、この基材は、適切な溶液を噴霧するノズルを一定速度で通過させる前に、予め400〜650℃の温度までオーブンで加熱する。
例1
この例において、随意の層は存在しない。コーティング3は、2種類の溶媒の酢酸エチルとイソプロパノールの混合溶媒中に溶解させた、2種類の有機金属チタン前駆体のチタンジイソプロポキシドジアセチルアセトネートとチタンテトラオクチレングリコレートを含む溶液を用いて堆積させた。
例2
例1を踏襲したが、但し、基材1とコーティング3の間に厚さ73nmのSnO2 :F層2を挿入した。この層は、ジブチル錫ジフロリドDBTF粉末の熱分解によって得られた。また、特許出願EP−A−0648196に記載のように、液相又は気相における熱分解による公知の方法によっても得ることができる。気相において、モノブチル錫トリクロリドとフッ化物前駆体(所望により、H2 Oタイプの「マイルド」な酸化剤と組み合わせる)の混合物を使用することもできる。得られる層の屈折率は約1.9であった。その表面抵抗は約50Ωであった。
例3
例2を踏襲したが、但し、この例では、約1.75の屈折率と約50nmの厚さを有する酸炭化ケイ素を主成分とする層2を基材1とコーティング3の間に挿入し、この層は、特許出願EP−A−0518755に記載のように、窒素で希釈したSiH4 とエチレンの混合物よりCVDによって得られる。この層は、基材1から生じるアルカリ金属(Na+ ,K+ )やアルカリ土類金属(Ca++)がコーティング3の方に拡散する性向を防ぐのに特に有効であり、このため、光触媒活性が顕著に改良される。また、SnO2 :Fと同様に、基材(1.52)とコーティング3(約2.30〜2.35)の中間の屈折率を有するため、反射と透過の双方において基材の着色強さを低下させることができ、この基材の光反射値RL を全体として低下させることができる。
例4〜7
例4
この例は、前述の特許出願EP−A−0518755に記載されているような、標準的ノズルを用いて基材1の上にCVDにより直接コーティング3を堆積させることに関する。前駆体として、有機金属化合物又は金属ハロゲン化物のいずれでも使用される。この例では、有機金属化合物としてチタンテトライソプロピレートを選んだが、この化合物は、高い揮発性と300〜650℃の広い使用可能温度のため有利である。この例において、約425℃で堆積を行い、TiO2 の厚さは15nmであった。
例5
例4と同様にして行い、但し、この例では、15nmのTiO2 層をガラス上に直接堆積させず、例3と同様にして堆積させた50nmのSiOC下層の上に堆積させた。
例6
例4と同様にして行い、但し、この例では、TiO2 層の厚さは65nmであった。
例7
例5と同様にして行い、但し、この例ではTiO2 層の厚さは60nmであった。
例8
この例では、「ディッピング」(「ディップコーティング」としても知られる)による堆積法を用いるゾルゲルを組合せた技術を使用した。この原理は図2に示されており、コーティング3の適切な1種以上の前駆体を含む液体溶液4の中に基材1を浸し、モーター装置5を用いてコントロールされた速度で基材1を引き上げた。引上速度の選定は、基材の2つの側の表面に残る溶液の厚さを調節することができ、したがって、溶媒を蒸発させて次いで前駆体を酸化物に分解させる熱処理の後のコーティングの厚さを調節することができる。
この例は、「セルコーティング」として知られる技術を使用し、その原理を図3に示した。これは、2つの実質的に平行な面の6と7、及び2つのシール8と9によって画定された狭いキャビティを形成することを含み、これらの面6と7の少なくとも1つは処理される基材1の面からなる。次いでキャビティが、コーティングの1種以上の前駆体の溶液4で満たされ、次いで濡れたメニスカスを形成するように、コントロールされた仕方で溶液4が抜き出され、例えばぜん動式ポンプ10を用い、この溶液が抜き出されたときに、基材1の面上に溶液の膜を残存させる。
−テスト1−
これは曇りについてのテストである。これは、濡れの後、光触媒とコーティングの構造(ヒドロキシル基、気孔率、粗さのレベル)の変化を観察することからなる。表面が光触媒性であると、コーティング上に付着した含炭素微細汚れ物質は継時的に分解され、表面は親水性であり、このため曇り防止性である。また、先にコーティングした基材を突然に再加熱し、冷間に置き又は単に基材に息を吹きつけ、曇りが現われるかどうかを観察し、現われるのであればその時間を測定し、その曇りが消えるまでに要する時間を測定する。
−テスト2−
これは、無垢のガラス表面に比較したコーティング3の表面の親水性と親油性の評価に関するものであり、自然光、暗闇の下で外界雰囲気に基材を1週間放置し、次いで紫外線に20分間曝した後、その表面での水滴とDOP(ジオフチルフタレート)の滴を測定することによる。
−テスト3−
これは、評価すべき基材の上に、オルガノシランの層を堆積し、紫外線(UVA)で照射し、光触媒によって分解させることからなる。オルガノシランは濡れ性を改良するため、照射の際の基材と水との接触角は、付着層の分解の状態を示す。この層の消失速度は、基材の光触媒活性に関係する。
2 薄層
3 コーティング
4 溶液
5 キャビティ
11 支持体
12 タンク
13 マスク
14 溝付シリンダー
Claims (3)
- 光触媒特性を有するコーティングが少なくとも1つの面の少なくとも一部に施された、ガラス、セラミック、又はガラス質セラミックであり、少なくとも部分的に結晶質であるアナターゼ形の酸化チタンを含み、そして該コーティングは親水性であり、光照射に曝された後に5°未満の水との接触角を有し、結晶質酸化チタンは0.5〜60nmの平均サイズを有する結晶子の形態である、コーティングした基材。
- コーティングが5〜100nmの厚さを有する請求項1に記載のコーティングした基材。
- その少なくとも1つの層が請求項1に記載のコーティングした基材である多層ガラス。
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FR9510839A FR2738813B1 (fr) | 1995-09-15 | 1995-09-15 | Substrat a revetement photo-catalytique |
FR95/10839 | 1995-09-15 |
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JP2005071719A Expired - Lifetime JP4777673B2 (ja) | 1995-09-15 | 2005-03-14 | 光触媒コーティングを備えた板ガラス |
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1996
- 1996-09-13 DK DK01106093T patent/DK1132351T3/da active
- 1996-09-13 EP EP20010106093 patent/EP1132351B1/fr not_active Revoked
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- 1996-09-13 DE DE29624343U patent/DE29624343U1/de not_active Expired - Lifetime
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- 1996-09-13 EP EP20040030245 patent/EP1518836A3/fr not_active Withdrawn
- 1996-09-13 CZ CZ0078498A patent/CZ299321B6/cs not_active IP Right Cessation
- 1996-09-13 KR KR10-1998-0701868A patent/KR100475355B1/ko not_active IP Right Cessation
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- 1996-09-13 WO PCT/FR1996/001421 patent/WO1997010186A1/fr not_active Application Discontinuation
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JP2007184361A (ja) * | 2006-01-05 | 2007-07-19 | Asahi Glass Co Ltd | 薄膜デバイス用ガラス基板およびその成膜方法 |
JP2009066497A (ja) * | 2007-09-12 | 2009-04-02 | Bridgestone Corp | 光触媒酸化チタン薄膜及びその製造方法 |
WO2013176369A1 (ko) * | 2012-05-25 | 2013-11-28 | (주)엘지하우시스 | 광촉매재, 그 제조 방법 및 광촉매 장치 |
KR101450389B1 (ko) * | 2012-05-25 | 2014-10-14 | (주)엘지하우시스 | 광촉매재, 그 제조 방법 및 광촉매 장치 |
US9480972B2 (en) | 2012-05-25 | 2016-11-01 | Lg Hausys, Ltd. | Photocatalyst, preparation method thereof, and photocatalyst apparatus |
WO2015060568A1 (ko) * | 2013-10-22 | 2015-04-30 | (주)엘지하우시스 | 광촉매재의 제조 방법 및 그에 의한 광촉매재 |
KR20150107317A (ko) * | 2014-03-14 | 2015-09-23 | (주)알에프트론 | 두 방향으로 정렬된 주석산화물반도체층을 갖는 전자 표시 장치용 기판 및 그의 제조 방법 |
KR101687777B1 (ko) | 2014-03-14 | 2016-12-19 | (주)알에프트론 | 두 방향으로 정렬된 주석산화물반도체층을 갖는 전자 표시 장치용 기판 및 그의 제조 방법 |
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