JP2005079584A - リソグラフィ装置およびデバイス製造方法 - Google Patents

リソグラフィ装置およびデバイス製造方法 Download PDF

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Publication number
JP2005079584A
JP2005079584A JP2004247635A JP2004247635A JP2005079584A JP 2005079584 A JP2005079584 A JP 2005079584A JP 2004247635 A JP2004247635 A JP 2004247635A JP 2004247635 A JP2004247635 A JP 2004247635A JP 2005079584 A JP2005079584 A JP 2005079584A
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JP
Japan
Prior art keywords
liquid
immersion liquid
substrate
less
projection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004247635A
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English (en)
Japanese (ja)
Inventor
Marcel Mathijs Theodore Marie Dierichs
マシュス テオドレ マリー ディーリヒス マルセル
Sjoerd Nicolaas Lambertus Donders
ニコラース ラムベルテュス ドンデルス ショエルト
Johannes Henricus Wilhelmus Jacobs
ヘンリクス ヴィルヘルムス ヤコブス ヨハネス
Hans Jansen
ヤンセン ハンス
Erik Roelof Loopstra
ロエロフ ロープシュトラ エリク
Johannes Sophia Maria Mertens Jeroen
ヨハネス ソフィア マリア メルテンス ジェロエン
Marco Koert Stavenga
コエルト シュタフェンガ マルコ
Bob Streefkerk
シュトレーフケルク ボブ
Martinus Cornelis Maria Verhagen
コーネリス マリア フェルハゲン マルティヌス
Lejla Seuntiens-Gruda
ソインティーンス − グルダ レユラ
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ASML Netherlands BV
Original Assignee
ASML Netherlands BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASML Netherlands BV filed Critical ASML Netherlands BV
Publication of JP2005079584A publication Critical patent/JP2005079584A/ja
Pending legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D61/00—Processes of separation using semi-permeable membranes, e.g. dialysis, osmosis or ultrafiltration; Apparatus, accessories or auxiliary operations specially adapted therefor
    • B01D61/02—Reverse osmosis; Hyperfiltration ; Nanofiltration
    • B01D61/025—Reverse osmosis; Hyperfiltration
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D19/00—Degasification of liquids
    • B01D19/0031—Degasification of liquids by filtration
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00—Treatment of water, waste water, or sewage
    • C02F1/20—Treatment of water, waste water, or sewage by degassing, i.e. liberation of dissolved gases
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00—Treatment of water, waste water, or sewage
    • C02F1/02—Treatment of water, waste water, or sewage by heating
    • C02F1/04—Treatment of water, waste water, or sewage by heating by distillation or evaporation
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00—Treatment of water, waste water, or sewage
    • C02F1/28—Treatment of water, waste water, or sewage by sorption
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00—Treatment of water, waste water, or sewage
    • C02F1/28—Treatment of water, waste water, or sewage by sorption
    • C02F1/283—Treatment of water, waste water, or sewage by sorption using coal, charred products, or inorganic mixtures containing them
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00—Treatment of water, waste water, or sewage
    • C02F1/30—Treatment of water, waste water, or sewage by irradiation
    • C02F1/32—Treatment of water, waste water, or sewage by irradiation with ultraviolet light
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00—Treatment of water, waste water, or sewage
    • C02F1/42—Treatment of water, waste water, or sewage by ion-exchange
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00—Treatment of water, waste water, or sewage
    • C02F1/44—Treatment of water, waste water, or sewage by dialysis, osmosis or reverse osmosis
    • C02F1/441—Treatment of water, waste water, or sewage by dialysis, osmosis or reverse osmosis by reverse osmosis
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F2103/00—Nature of the water, waste water, sewage or sludge to be treated
    • C02F2103/34—Nature of the water, waste water, sewage or sludge to be treated from industrial activities not provided for in groups C02F2103/12 - C02F2103/32
    • C02F2103/40—Nature of the water, waste water, sewage or sludge to be treated from industrial activities not provided for in groups C02F2103/12 - C02F2103/32 from the manufacture or use of photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Water Supply & Treatment (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Nanotechnology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Epidemiology (AREA)
  • Toxicology (AREA)
  • Organic Chemistry (AREA)
  • Public Health (AREA)
  • Atmospheric Sciences (AREA)
  • Hydrology & Water Resources (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Urology & Nephrology (AREA)
JP2004247635A 2003-08-29 2004-08-27 リソグラフィ装置およびデバイス製造方法 Pending JP2005079584A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP03255376 2003-08-29

Related Child Applications (3)

Application Number Title Priority Date Filing Date
JP2007339406A Division JP5008550B2 (ja) 2003-08-29 2007-12-28 リソグラフィ投影装置
JP2008279190A Division JP5008635B2 (ja) 2003-08-29 2008-10-30 リソグラフィ投影装置およびリソグラフィ投影方法
JP2008279191A Division JP5008636B2 (ja) 2003-08-29 2008-10-30 リソグラフィ投影装置およびリソグラフィ投影方法

Publications (1)

Publication Number Publication Date
JP2005079584A true JP2005079584A (ja) 2005-03-24

Family

ID=34400571

Family Applications (5)

Application Number Title Priority Date Filing Date
JP2004247635A Pending JP2005079584A (ja) 2003-08-29 2004-08-27 リソグラフィ装置およびデバイス製造方法
JP2007339406A Expired - Fee Related JP5008550B2 (ja) 2003-08-29 2007-12-28 リソグラフィ投影装置
JP2008279190A Expired - Fee Related JP5008635B2 (ja) 2003-08-29 2008-10-30 リソグラフィ投影装置およびリソグラフィ投影方法
JP2008279191A Expired - Fee Related JP5008636B2 (ja) 2003-08-29 2008-10-30 リソグラフィ投影装置およびリソグラフィ投影方法
JP2011163844A Pending JP2011254092A (ja) 2003-08-29 2011-07-27 リソグラフィ投影装置およびリソグラフィ投影方法

Family Applications After (4)

Application Number Title Priority Date Filing Date
JP2007339406A Expired - Fee Related JP5008550B2 (ja) 2003-08-29 2007-12-28 リソグラフィ投影装置
JP2008279190A Expired - Fee Related JP5008635B2 (ja) 2003-08-29 2008-10-30 リソグラフィ投影装置およびリソグラフィ投影方法
JP2008279191A Expired - Fee Related JP5008636B2 (ja) 2003-08-29 2008-10-30 リソグラフィ投影装置およびリソグラフィ投影方法
JP2011163844A Pending JP2011254092A (ja) 2003-08-29 2011-07-27 リソグラフィ投影装置およびリソグラフィ投影方法

Country Status (8)

Country Link
US (6) US7733459B2 (https=)
EP (3) EP1510872B1 (https=)
JP (5) JP2005079584A (https=)
KR (1) KR100659257B1 (https=)
CN (2) CN101872130B (https=)
DE (1) DE602004029970D1 (https=)
SG (1) SG109609A1 (https=)
TW (1) TWI245163B (https=)

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WO2005122218A1 (ja) * 2004-06-09 2005-12-22 Nikon Corporation 露光装置及びデバイス製造方法
JP2006190997A (ja) * 2004-12-09 2006-07-20 Nikon Corp 露光装置、露光方法及びデバイス製造方法
WO2006080250A1 (ja) * 2005-01-25 2006-08-03 Jsr Corporation 液浸型露光システム、液浸型露光用液体のリサイクル方法及び供給方法
JP2007081373A (ja) * 2005-09-13 2007-03-29 Taiwan Semiconductor Manufacturing Co Ltd 液浸リソグラフィ方法及びその装置
WO2007072818A1 (ja) * 2005-12-19 2007-06-28 Nikon Corporation 液体製造装置、液浸露光装置、及びデバイス製造方法
JP2007286162A (ja) * 2006-04-13 2007-11-01 Nikon Corp 液浸顕微鏡装置
JP2009267405A (ja) * 2008-04-25 2009-11-12 Asml Netherlands Bv 液浸リソグラフィに関する方法及び液浸リソグラフィ装置
JP2011066451A (ja) * 2006-09-07 2011-03-31 Asml Netherlands Bv リソグラフィ装置およびデバイス製造方法
US8072576B2 (en) 2003-05-23 2011-12-06 Nikon Corporation Exposure apparatus and method for producing device
US8125610B2 (en) 2005-12-02 2012-02-28 ASML Metherlands B.V. Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus
JP5040653B2 (ja) * 2005-08-23 2012-10-03 株式会社ニコン 露光装置及び露光方法、並びにデバイス製造方法
US20130271945A1 (en) 2004-02-06 2013-10-17 Nikon Corporation Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method
US9341954B2 (en) 2007-10-24 2016-05-17 Nikon Corporation Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
US9423698B2 (en) 2003-10-28 2016-08-23 Nikon Corporation Illumination optical apparatus and projection exposure apparatus
US9678332B2 (en) 2007-11-06 2017-06-13 Nikon Corporation Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method
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US9885872B2 (en) 2003-11-20 2018-02-06 Nikon Corporation Illumination optical apparatus, exposure apparatus, and exposure method with optical integrator and polarization member that changes polarization state of light
US9891539B2 (en) 2005-05-12 2018-02-13 Nikon Corporation Projection optical system, exposure apparatus, and exposure method
US9958786B2 (en) 2003-04-11 2018-05-01 Nikon Corporation Cleanup method for optics in immersion lithography using object on wafer holder in place of wafer
US10101666B2 (en) 2007-10-12 2018-10-16 Nikon Corporation Illumination optical apparatus, exposure apparatus, and device manufacturing method
JP2018534608A (ja) * 2015-09-24 2018-11-22 ズース マイクロテク フォトマスク エクイップメント ゲゼルシャフト ミット ベシュレンクテル ハフツング ウント コンパニー コマンディートゲゼルシャフトＳｕｓｓ ＭｉｃｒｏＴｅｃ Ｐｈｏｔｏｍａｓｋ Ｅｑｕｉｐｍｅｎｔ ＧｍｂＨ ＆ Ｃｏ． ＫＧ 紫外線に暴露された水性液体媒体で基板を処理する方法

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US20060232753A1 (en) * 2005-04-19 2006-10-19 Asml Holding N.V. Liquid immersion lithography system with tilted liquid flow
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US7773195B2 (en) * 2005-11-29 2010-08-10 Asml Holding N.V. System and method to increase surface tension and contact angle in immersion lithography
US20070124987A1 (en) * 2005-12-05 2007-06-07 Brown Jeffrey K Electronic pest control apparatus
KR20080071552A (ko) * 2005-12-06 2008-08-04 가부시키가이샤 니콘 노광 방법, 노광 장치 및 디바이스 제조 방법
KR100870791B1 (ko) 2006-02-15 2008-11-27 캐논 가부시끼가이샤 노광장치, 노광방법 및 노광시스템
JP2007242774A (ja) * 2006-03-07 2007-09-20 Canon Inc 露光装置及び方法、並びに、デバイス製造方法
CN100590173C (zh) * 2006-03-24 2010-02-17 北京有色金属研究总院 一种荧光粉及其制造方法和所制成的电光源
US8564759B2 (en) * 2006-06-29 2013-10-22 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for immersion lithography
US20090316119A1 (en) * 2006-07-21 2009-12-24 Parekh Bipin S Apparatus and method for conditioning an immersion fluid
US20080198347A1 (en) * 2007-02-16 2008-08-21 Canon Kabushiki Kaisha Immersion exposure apparatus and method of manufacturing device
JP2010519722A (ja) * 2007-02-23 2010-06-03 株式会社ニコン 露光方法、露光装置、デバイス製造方法、及び液浸露光用基板
US9025126B2 (en) * 2007-07-31 2015-05-05 Nikon Corporation Exposure apparatus adjusting method, exposure apparatus, and device fabricating method
SG151198A1 (en) * 2007-09-27 2009-04-30 Asml Netherlands Bv Methods relating to immersion lithography and an immersion lithographic apparatus
KR101423611B1 (ko) * 2008-01-16 2014-07-30 삼성전자주식회사 기판 처리 장치, 노광 장치 및 클리닝 툴의 세정 방법
US8629970B2 (en) * 2008-01-23 2014-01-14 Asml Netherlands B.V. Immersion lithographic apparatus with immersion fluid re-circulating system
JP2009218344A (ja) * 2008-03-10 2009-09-24 Canon Inc 露光装置および露光方法
US9176393B2 (en) * 2008-05-28 2015-11-03 Asml Netherlands B.V. Lithographic apparatus and a method of operating the apparatus
NL2004540A (en) * 2009-05-14 2010-11-18 Asml Netherlands Bv Lithographic apparatus and a method of operating the apparatus.
NL2005207A (en) 2009-09-28 2011-03-29 Asml Netherlands Bv Heat pipe, lithographic apparatus and device manufacturing method.
CA2856196C (en) 2011-12-06 2020-09-01 Masco Corporation Of Indiana Ozone distribution in a faucet
US12350627B2 (en) 2013-02-28 2025-07-08 Aqua Membranes, Inc. Permeate flow patterns
US9017934B2 (en) 2013-03-08 2015-04-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist defect reduction system and method
US9502231B2 (en) 2013-03-12 2016-11-22 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist layer and method
US8932799B2 (en) 2013-03-12 2015-01-13 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9245751B2 (en) 2013-03-12 2016-01-26 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-reflective layer and method
US9256128B2 (en) 2013-03-12 2016-02-09 Taiwan Semiconductor Manufacturing Company, Ltd. Method for manufacturing semiconductor device
US9354521B2 (en) 2013-03-12 2016-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9543147B2 (en) 2013-03-12 2017-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method of manufacture
US9110376B2 (en) 2013-03-12 2015-08-18 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9175173B2 (en) 2013-03-12 2015-11-03 Taiwan Semiconductor Manufacturing Company, Ltd. Unlocking layer and method
US9117881B2 (en) 2013-03-15 2015-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Conductive line system and process
KR102101350B1 (ko) * 2013-03-15 2020-04-17 삼성전자주식회사 파티클 카운터 및 그를 구비한 임멀젼 노광 설비
US9341945B2 (en) 2013-08-22 2016-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method of formation and use
US10036953B2 (en) 2013-11-08 2018-07-31 Taiwan Semiconductor Manufacturing Company Photoresist system and method
US10095113B2 (en) 2013-12-06 2018-10-09 Taiwan Semiconductor Manufacturing Company Photoresist and method
US9761449B2 (en) 2013-12-30 2017-09-12 Taiwan Semiconductor Manufacturing Company, Ltd. Gap filling materials and methods
US9599896B2 (en) 2014-03-14 2017-03-21 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
DE102014004511A1 (de) * 2014-03-28 2015-10-01 Carl Zeiss Microscopy Gmbh Verfahren zum Beenden mikroskopischer Anwendungen mit einem Immersionsobjektiv
CN106164777B (zh) * 2014-04-14 2019-06-18 Asml荷兰有限公司 光刻过程的优化流程
US9581908B2 (en) 2014-05-16 2017-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method
DE102015218053A1 (de) * 2015-09-21 2017-03-23 Eta Plus Electronic Gmbh Vorrichtung zur UV-Bestrahlung eines strömenden Mediums
WO2017112795A1 (en) 2015-12-21 2017-06-29 Delta Faucet Company Fluid delivery system including a disinfectant device
JP2019529099A (ja) 2016-09-20 2019-10-17 アクア メンブレインズ エルエルシー 透過流パターン
KR102033982B1 (ko) 2016-11-19 2019-10-18 아쿠아 멤브레인스 엘엘씨 나선형 권취 요소를 위한 간섭 패턴
WO2018190937A1 (en) 2017-04-12 2018-10-18 Aqua Membranes Llc Graded spacers for filtration wound elements
CN206881955U (zh) * 2017-04-17 2018-01-16 福建西河卫浴科技有限公司 一种离心散水结构及花洒
CN120094407A (zh) 2017-04-20 2025-06-06 阿夸曼布拉尼斯公司 用于螺旋卷绕元件的不嵌套、不变形图案
WO2018195367A1 (en) 2017-04-20 2018-10-25 Aqua Membranes Llc Mixing-promoting spacer patterns for spiral-wound elements
CN111344053A (zh) 2017-10-13 2020-06-26 阿夸曼布拉尼斯公司 螺旋缠绕元件的桥支撑件和减少的进给间隔件
JP7001712B2 (ja) * 2017-12-04 2022-01-20 株式会社島津製作所 ファインバブル除去方法及びファインバブル除去装置、並びに、気泡径分布測定方法及び気泡径分布測定装置
WO2020154734A1 (en) 2019-01-27 2020-07-30 Aqua Membranes Inc. Composite membranes
US12303838B2 (en) 2019-08-06 2025-05-20 Aqua Membranes, Inc. Preferred flow paths for spiral-wound elements
US11633700B2 (en) 2020-04-07 2023-04-25 Aqua Membranes Inc. Independent spacers and methods
CN112650031B (zh) * 2020-12-25 2024-07-23 浙江启尔机电技术有限公司 浸液供给装置、光刻系统和浸液品质监测方法
CN118742376B (zh) 2021-12-28 2025-12-05 阿夸曼布拉尼斯公司 具有保护特征的高截留率螺旋卷绕元件

Family Cites Families (229)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE224448C (https=)
DE221563C (https=)
DE206607C (https=)
DE242880C (https=)
GB1242527A (en) 1967-10-20 1971-08-11 Kodak Ltd Optical instruments
US3573975A (en) 1968-07-10 1971-04-06 Ibm Photochemical fabrication process
ATE1462T1 (de) 1979-07-27 1982-08-15 Werner W. Dr. Tabarelli Optisches lithographieverfahren und einrichtung zum kopieren eines musters auf eine halbleiterscheibe.
FR2474708B1 (fr) 1980-01-24 1987-02-20 Dme Procede de microphotolithographie a haute resolution de traits
JPS5754317A (en) 1980-09-19 1982-03-31 Hitachi Ltd Method and device for forming pattern
US4346164A (en) 1980-10-06 1982-08-24 Werner Tabarelli Photolithographic method for the manufacture of integrated circuits
US4509852A (en) 1980-10-06 1985-04-09 Werner Tabarelli Apparatus for the photolithographic manufacture of integrated circuit elements
US4390273A (en) 1981-02-17 1983-06-28 Censor Patent-Und Versuchsanstalt Projection mask as well as a method and apparatus for the embedding thereof and projection printing system
JPS57153433A (en) * 1981-03-18 1982-09-22 Hitachi Ltd Manufacturing device for semiconductor
JPS58202448A (ja) 1982-05-21 1983-11-25 Hitachi Ltd 露光装置
JPH0747157B2 (ja) 1985-02-15 1995-05-24 株式会社日立製作所 超純水製造装置
JPS61187984U (https=) 1985-05-15 1986-11-22
JPS6265326A (ja) 1985-09-18 1987-03-24 Hitachi Ltd 露光装置
JPS6265326U (https=) 1985-10-16 1987-04-23
JPS62121417A (ja) 1985-11-22 1987-06-02 Hitachi Ltd 液浸対物レンズ装置
JPS62121417U (https=) 1986-01-24 1987-08-01
JPS63108724A (ja) * 1986-10-27 1988-05-13 Japan Organo Co Ltd 半導体洗浄用超純水の製造方法
JPS63157419A (ja) 1986-12-22 1988-06-30 Toshiba Corp 微細パタ−ン転写装置
JPH0517223Y2 (https=) 1987-01-05 1993-05-10
JPS63157419U (https=) 1987-03-31 1988-10-14
US5040020A (en) 1988-03-31 1991-08-13 Cornell Research Foundation, Inc. Self-aligned, high resolution resonant dielectric lithography
US5523193A (en) 1988-05-31 1996-06-04 Texas Instruments Incorporated Method and apparatus for patterning and imaging member
JPH03209479A (ja) 1989-09-06 1991-09-12 Sanee Giken Kk 露光方法
US5296891A (en) 1990-05-02 1994-03-22 Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V. Illumination device
US5053060A (en) * 1990-06-29 1991-10-01 Molecular Devices Corporation Device and method for degassing, gassing and debubbling liquids
US5425227A (en) 1990-06-29 1995-06-20 Zinser Textilmaschinen Gmbh Protecting a textile process liquid before application to a filament
US5121256A (en) 1991-03-14 1992-06-09 The Board Of Trustees Of The Leland Stanford Junior University Lithography system employing a solid immersion lens
JPH04305917A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JPH04305915A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JPH05136114A (ja) * 1991-11-08 1993-06-01 Tadahiro Omi 超純水供給装置及び基体洗浄方法並びに超純水製造装置及び超純水製造方法
US5229872A (en) 1992-01-21 1993-07-20 Hughes Aircraft Company Exposure device including an electrically aligned electronic mask for micropatterning
JPH06124873A (ja) * 1992-10-09 1994-05-06 Canon Inc 液浸式投影露光装置
JP2753930B2 (ja) 1992-11-27 1998-05-20 キヤノン株式会社 液浸式投影露光装置
JP2520833B2 (ja) 1992-12-21 1996-07-31 東京エレクトロン株式会社 浸漬式の液処理装置
JP2783376B2 (ja) * 1993-03-15 1998-08-06 株式会社日立サイエンスシステムズ 自動化学分析装置
JP3390203B2 (ja) * 1993-03-23 2003-03-24 株式会社日本フォトサイエンス 紫外線殺菌液の菌の光回復阻止法
JPH07220990A (ja) 1994-01-28 1995-08-18 Hitachi Ltd パターン形成方法及びその露光装置
JPH08316124A (ja) 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
JP3426072B2 (ja) 1996-01-17 2003-07-14 オルガノ株式会社 超純水製造装置
EP0824722B1 (en) 1996-03-06 2001-07-25 Asm Lithography B.V. Differential interferometer system and lithographic step-and-scan apparatus provided with such a system
US6104687A (en) 1996-08-26 2000-08-15 Digital Papyrus Corporation Method and apparatus for coupling an optical lens to a disk through a coupling medium having a relatively high index of refraction
US5825043A (en) 1996-10-07 1998-10-20 Nikon Precision Inc. Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
WO1998028665A1 (en) 1996-12-24 1998-07-02 Koninklijke Philips Electronics N.V. Two-dimensionally balanced positioning device with two object holders, and lithographic device provided with such a positioning device
DE69711929T2 (de) 1997-01-29 2002-09-05 Micronic Laser Systems Ab, Taeby Verfahren und gerät zur erzeugung eines musters auf einem mit fotoresist beschichteten substrat mittels fokusiertem laserstrahl
JP3612920B2 (ja) 1997-02-14 2005-01-26 ソニー株式会社 光学記録媒体の原盤作製用露光装置
SE509062C2 (sv) 1997-02-28 1998-11-30 Micronic Laser Systems Ab Dataomvandlingsmetod för en laserskrivare med flera strålar för mycket komplexa mikrokolitografiska mönster
EP0900412B1 (en) 1997-03-10 2005-04-06 ASML Netherlands B.V. Lithographic apparatus comprising a positioning device having two object holders
JPH10255319A (ja) 1997-03-12 1998-09-25 Hitachi Maxell Ltd 原盤露光装置及び方法
JP3747566B2 (ja) 1997-04-23 2006-02-22 株式会社ニコン 液浸型露光装置
JP3817836B2 (ja) 1997-06-10 2006-09-06 株式会社ニコン 露光装置及びその製造方法並びに露光方法及びデバイス製造方法
US5900354A (en) * 1997-07-03 1999-05-04 Batchelder; John Samuel Method for optical inspection and lithography
US5938922A (en) 1997-08-19 1999-08-17 Celgard Llc Contactor for degassing liquids
US5997745A (en) * 1998-04-08 1999-12-07 Zenon Environmental Inc. Method for producing high purity water using triple pass reverse osmosis (TPRO)
WO1999027568A1 (en) 1997-11-21 1999-06-03 Nikon Corporation Projection aligner and projection exposure method
JPH11176727A (ja) 1997-12-11 1999-07-02 Nikon Corp 投影露光装置
EP1039511A4 (en) 1997-12-12 2005-03-02 Nikon Corp PROJECTION EXPOSURE PROCESSING METHOD AND PROJECTION APPARATUS
WO1999049504A1 (fr) 1998-03-26 1999-09-30 Nikon Corporation Procede et systeme d'exposition par projection
JP2000051865A (ja) * 1998-08-06 2000-02-22 Kurita Water Ind Ltd 電気再生型脱塩装置
JP2000058436A (ja) 1998-08-11 2000-02-25 Nikon Corp 投影露光装置及び露光方法
JP2000087579A (ja) * 1998-09-11 2000-03-28 Toshiba Corp 海洋深層水の多目的利用プラント
JP2000266763A (ja) * 1999-03-18 2000-09-29 Hitachi Ltd 自動分析装置
TWI242111B (en) 1999-04-19 2005-10-21 Asml Netherlands Bv Gas bearings for use in vacuum chambers and their application in lithographic projection apparatus
JP4504479B2 (ja) 1999-09-21 2010-07-14 オリンパス株式会社 顕微鏡用液浸対物レンズ
JP2001153855A (ja) * 1999-11-29 2001-06-08 Japan Organo Co Ltd 不純物濃度分析方法およびシステム
TW546551B (en) 1999-12-21 2003-08-11 Asml Netherlands Bv Balanced positioning system for use in lithographic apparatus
JP3781679B2 (ja) * 2000-01-18 2006-05-31 旭化成ケミカルズ株式会社 懸濁水の膜濾過浄化方法
JP2001272604A (ja) 2000-03-27 2001-10-05 Olympus Optical Co Ltd 液浸対物レンズおよびそれを用いた光学装置
JP3895540B2 (ja) * 2000-06-21 2007-03-22 三徳化学工業株式会社 精製過酸化水素水の製造方法
JP2004123762A (ja) 2000-06-30 2004-04-22 Nippon Zeon Co Ltd 洗浄剤および洗浄方法
JP4447126B2 (ja) * 2000-07-10 2010-04-07 野村マイクロ・サイエンス株式会社 超純水製造装置
TW591653B (en) 2000-08-08 2004-06-11 Koninkl Philips Electronics Nv Method of manufacturing an optically scannable information carrier
US6423223B1 (en) * 2000-08-31 2002-07-23 Donald A. Northcut Multi-element, reverse osmosis, liquid filter system with flushing and filtering circuits
JP2004508183A (ja) * 2000-09-13 2004-03-18 マイクロリス・コーポレイシヨン 液体濾過装置
KR100866818B1 (ko) 2000-12-11 2008-11-04 가부시키가이샤 니콘 투영광학계 및 이 투영광학계를 구비한 노광장치
JP2002273442A (ja) * 2001-03-23 2002-09-24 Kurita Water Ind Ltd 純水製造装置および純水製造方法
US6620743B2 (en) * 2001-03-26 2003-09-16 Asm America, Inc. Stable, oxide-free silicon surface preparation
WO2002091078A1 (en) * 2001-05-07 2002-11-14 Massachusetts Institute Of Technology Methods and apparatus employing an index matching medium
JP2002355683A (ja) * 2001-05-29 2002-12-10 Kurita Water Ind Ltd 超純水製造方法及び超純水製造装置
US7220323B2 (en) * 2001-06-20 2007-05-22 Matsushita Electric Industrial Co., Ltd. Cleaning method for magnetic transfer carrier
EP1276016B1 (en) * 2001-07-09 2009-06-10 Canon Kabushiki Kaisha Exposure apparatus
US6607668B2 (en) * 2001-08-17 2003-08-19 Technology Ventures, Inc. Water purifier
JP4661009B2 (ja) * 2001-09-04 2011-03-30 栗田工業株式会社 超純水製造システム
AT410406B (de) 2001-09-17 2003-04-25 Andritz Ag Maschf Verfahren und vorrichtung zur belüftung einer flüssigkeit mit gas
US6600547B2 (en) 2001-09-24 2003-07-29 Nikon Corporation Sliding seal
JP3849766B2 (ja) * 2001-10-26 2006-11-22 栗田工業株式会社 有機物含有水の処理装置及び処理方法
JP3878452B2 (ja) * 2001-10-31 2007-02-07 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
EP1446703A2 (en) 2001-11-07 2004-08-18 Applied Materials, Inc. Optical spot grid array printer
JP2003145146A (ja) * 2001-11-12 2003-05-20 Hitachi Ltd 超純水の製造方法及びその製造装置
CN1423147A (zh) * 2001-12-05 2003-06-11 株式会社尼康 投影光学系统和具有该投影光学系统的曝光装置
JP4159823B2 (ja) * 2001-12-11 2008-10-01 野村マイクロ・サイエンス株式会社 超純水製造方法
JP3572357B2 (ja) 2001-12-17 2004-09-29 防衛庁技術研究本部長 ハンガ装置
DE10229818A1 (de) 2002-06-28 2004-01-15 Carl Zeiss Smt Ag Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem
DE10210899A1 (de) 2002-03-08 2003-09-18 Zeiss Carl Smt Ag Refraktives Projektionsobjektiv für Immersions-Lithographie
JP2005536775A (ja) 2002-08-23 2005-12-02 株式会社ニコン 投影光学系、フォトリソグラフィ方法および露光装置、並びに露光装置を用いた方法
US6858145B2 (en) * 2002-09-12 2005-02-22 Chemitreat Pte Ltd Method of removing organic impurities from water
US7093375B2 (en) 2002-09-30 2006-08-22 Lam Research Corporation Apparatus and method for utilizing a meniscus in substrate processing
US6788477B2 (en) 2002-10-22 2004-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus for method for immersion lithography
SG121819A1 (en) 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
DE60335595D1 (de) 2002-11-12 2011-02-17 Asml Netherlands Bv Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung
CN101382738B (zh) 2002-11-12 2011-01-12 Asml荷兰有限公司 光刻投射装置
SG121822A1 (en) 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
KR100585476B1 (ko) 2002-11-12 2006-06-07 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 및 디바이스 제조방법
SG131766A1 (en) 2002-11-18 2007-05-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
TWI255971B (en) 2002-11-29 2006-06-01 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
WO2004050266A1 (ja) 2002-12-03 2004-06-17 Nikon Corporation 汚染物質除去方法及び装置、並びに露光方法及び装置
DE10258718A1 (de) 2002-12-09 2004-06-24 Carl Zeiss Smt Ag Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives
JP4232449B2 (ja) 2002-12-10 2009-03-04 株式会社ニコン 露光方法、露光装置、及びデバイス製造方法
EP1429190B1 (en) 2002-12-10 2012-05-09 Canon Kabushiki Kaisha Exposure apparatus and method
EP1571695A4 (en) 2002-12-10 2008-10-15 Nikon Corp EXPOSURE DEVICE AND METHOD FOR PRODUCING THE DEVICE
US7948604B2 (en) 2002-12-10 2011-05-24 Nikon Corporation Exposure apparatus and method for producing device
DE10257766A1 (de) 2002-12-10 2004-07-15 Carl Zeiss Smt Ag Verfahren zur Einstellung einer gewünschten optischen Eigenschaft eines Projektionsobjektivs sowie mikrolithografische Projektionsbelichtungsanlage
EP1571701A4 (en) * 2002-12-10 2008-04-09 Nikon Corp EXPOSURE DEVICE AND METHOD FOR MANUFACTURING COMPONENTS
AU2003289272A1 (en) 2002-12-10 2004-06-30 Nikon Corporation Surface position detection apparatus, exposure method, and device porducing method
AU2003289271A1 (en) 2002-12-10 2004-06-30 Nikon Corporation Exposure apparatus, exposure method and method for manufacturing device
JP4352874B2 (ja) 2002-12-10 2009-10-28 株式会社ニコン 露光装置及びデバイス製造方法
EP1571700A4 (en) 2002-12-10 2007-09-12 Nikon Corp OPTICAL DEVICE AND PROJECTION EXPOSURE DEVICE USING THE OPTICAL DEVICE
AU2003302831A1 (en) 2002-12-10 2004-06-30 Nikon Corporation Exposure method, exposure apparatus and method for manufacturing device
JP4608876B2 (ja) * 2002-12-10 2011-01-12 株式会社ニコン 露光装置及びデバイス製造方法
CN101872135B (zh) 2002-12-10 2013-07-31 株式会社尼康 曝光设备和器件制造法
KR101157002B1 (ko) 2002-12-10 2012-06-21 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
SG171468A1 (en) 2002-12-10 2011-06-29 Nikon Corp Exposure apparatus and method for producing device
ATE424026T1 (de) 2002-12-13 2009-03-15 Koninkl Philips Electronics Nv Flüssigkeitsentfernung in einem verfahren und einer einrichtung zum bestrahlen von flecken auf einer schicht
GB0229345D0 (en) 2002-12-17 2003-01-22 Safe T Ltd Hollow needle applicators
USRE48515E1 (en) 2002-12-19 2021-04-13 Asml Netherlands B.V. Method and device for irradiating spots on a layer
EP1732075A3 (en) 2002-12-19 2007-02-21 Koninklijke Philips Electronics N.V. Method and device for irradiating spots on a layer
US6781670B2 (en) 2002-12-30 2004-08-24 Intel Corporation Immersion lithography
EP2466621B1 (en) * 2003-02-26 2015-04-01 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US7029832B2 (en) 2003-03-11 2006-04-18 Samsung Electronics Co., Ltd. Immersion lithography methods using carbon dioxide
US20050164522A1 (en) * 2003-03-24 2005-07-28 Kunz Roderick R. Optical fluids, and systems and methods of making and using the same
JP4902201B2 (ja) 2003-04-07 2012-03-21 株式会社ニコン 露光装置、露光方法及びデバイス製造方法
WO2004090634A2 (en) 2003-04-10 2004-10-21 Nikon Corporation Environmental system including vaccum scavange for an immersion lithography apparatus
KR101177330B1 (ko) 2003-04-10 2012-08-30 가부시키가이샤 니콘 액침 리소그래피 장치
KR20170016014A (ko) * 2003-04-11 2017-02-10 가부시키가이샤 니콘 액침 리소그래피에 의한 광학기기의 세정방법
JP2004327638A (ja) 2003-04-24 2004-11-18 Matsushita Electric Ind Co Ltd 薄膜塗布装置
JP2004327747A (ja) 2003-04-25 2004-11-18 Matsushita Electric Ind Co Ltd 薬液塗布装置
JP4025683B2 (ja) 2003-05-09 2007-12-26 松下電器産業株式会社 パターン形成方法及び露光装置
US7485671B2 (en) * 2003-05-16 2009-02-03 Velocys, Inc. Process for forming an emulsion using microchannel process technology
JP5058550B2 (ja) 2003-05-23 2012-10-24 株式会社ニコン 露光装置、露光方法、デバイス製造方法、及び液体回収方法
JP2004356205A (ja) 2003-05-27 2004-12-16 Tadahiro Omi スキャン型露光装置および露光方法
TWI347741B (en) 2003-05-30 2011-08-21 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US7213963B2 (en) 2003-06-09 2007-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7317504B2 (en) 2004-04-08 2008-01-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP2261742A3 (en) 2003-06-11 2011-05-25 ASML Netherlands BV Lithographic apparatus and device manufacturing method.
US6867844B2 (en) 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
JP4343597B2 (ja) 2003-06-25 2009-10-14 キヤノン株式会社 露光装置及びデバイス製造方法
JP3862678B2 (ja) 2003-06-27 2006-12-27 キヤノン株式会社 露光装置及びデバイス製造方法
ATE513309T1 (de) 2003-07-09 2011-07-15 Nikon Corp Belichtungsvorrichtung und verfahren zur bauelementeherstellung
WO2005015315A2 (de) 2003-07-24 2005-02-17 Carl Zeiss Smt Ag Mikrolithographische projektionsbelichtungsanlage sowie verfahren zum einbringen einer immersionsflüssigkeit in einem immersionsraum
US7326522B2 (en) 2004-02-11 2008-02-05 Asml Netherlands B.V. Device manufacturing method and a substrate
CN102043350B (zh) 2003-07-28 2014-01-29 株式会社尼康 曝光装置、器件制造方法、及曝光装置的控制方法
JP4492239B2 (ja) 2003-07-28 2010-06-30 株式会社ニコン 露光装置及びデバイス製造方法、並びに露光装置の制御方法
US7779781B2 (en) * 2003-07-31 2010-08-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US6844206B1 (en) 2003-08-21 2005-01-18 Advanced Micro Devices, Llp Refractive index system monitor and control for immersion lithography
JP2005072404A (ja) 2003-08-27 2005-03-17 Sony Corp 露光装置および半導体装置の製造方法
TWI263859B (en) 2003-08-29 2006-10-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US6954256B2 (en) 2003-08-29 2005-10-11 Asml Netherlands B.V. Gradient immersion lithography
EP3163375B1 (en) 2003-08-29 2019-01-09 Nikon Corporation Exposure apparatus and exposure method
JP4305095B2 (ja) 2003-08-29 2009-07-29 株式会社ニコン 光学部品の洗浄機構を搭載した液浸投影露光装置及び液浸光学部品洗浄方法
TWI245163B (en) * 2003-08-29 2005-12-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
JP4168880B2 (ja) 2003-08-29 2008-10-22 株式会社ニコン 液浸用溶液
US7014966B2 (en) 2003-09-02 2006-03-21 Advanced Micro Devices, Inc. Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems
EP1517184A1 (en) 2003-09-18 2005-03-23 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101248325B1 (ko) 2003-09-26 2013-03-27 가부시키가이샤 니콘 투영노광장치 및 투영노광장치의 세정방법, 메인터넌스방법 그리고 디바이스의 제조방법
TWI311691B (en) 2003-10-30 2009-07-01 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
WO2005050324A2 (en) 2003-11-05 2005-06-02 Dsm Ip Assets B.V. A method and apparatus for producing microchips
JP4359224B2 (ja) 2003-11-07 2009-11-04 エーエスエムエル ネザーランズ ビー．ブイ． 放射検出器
US7545481B2 (en) 2003-11-24 2009-06-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE602004028511D1 (de) 2003-12-23 2010-09-16 Koninkl Philips Electronics Nv Bestrahlungsverfahren
US7589818B2 (en) 2003-12-23 2009-09-15 Asml Netherlands B.V. Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus
US7394521B2 (en) 2003-12-23 2008-07-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7145641B2 (en) 2003-12-31 2006-12-05 Asml Netherlands, B.V. Lithographic apparatus, device manufacturing method, and device manufactured thereby
JP2005209705A (ja) 2004-01-20 2005-08-04 Nikon Corp 露光装置及びデバイス製造方法
CN1938646B (zh) 2004-01-20 2010-12-15 卡尔蔡司Smt股份公司 曝光装置和用于投影透镜的测量装置
EP1713114B1 (en) 2004-02-03 2018-09-19 Nikon Corporation Exposure apparatus and device manufacturing method
US7050146B2 (en) 2004-02-09 2006-05-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101166007B1 (ko) 2004-02-10 2012-07-17 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법, 메인터넌스 방법 및노광 방법
JP2005236047A (ja) 2004-02-19 2005-09-02 Canon Inc 露光装置及び方法
US7402377B2 (en) 2004-02-20 2008-07-22 E. I. Du Pont De Nemours And Company Use of perfluoro-n-alkanes in vacuum ultraviolet applications
TW200613246A (en) 2004-03-08 2006-05-01 Du Pont Highly purified liquid perfluoro-n-alkanes and method for preparing
US20050205108A1 (en) 2004-03-16 2005-09-22 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for immersion lithography lens cleaning
US7027125B2 (en) * 2004-03-25 2006-04-11 International Business Machines Corporation System and apparatus for photolithography
US7034917B2 (en) 2004-04-01 2006-04-25 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufactured thereby
JP3969457B2 (ja) 2004-05-21 2007-09-05 Ｊｓｒ株式会社 液浸露光用液体および液浸露光方法
KR20070029731A (ko) 2004-06-01 2007-03-14 이 아이 듀폰 디 네모아 앤드 캄파니 자외선-투명성 알칸 및 진공 및 원자외선 응용에서 그의사용 방법
US7224456B1 (en) 2004-06-02 2007-05-29 Advanced Micro Devices, Inc. In-situ defect monitor and control system for immersion medium in immersion lithography
JP4655763B2 (ja) 2004-06-04 2011-03-23 株式会社ニコン 露光装置、露光方法及びデバイス製造方法
WO2005122218A1 (ja) 2004-06-09 2005-12-22 Nikon Corporation 露光装置及びデバイス製造方法
JP2005353763A (ja) 2004-06-09 2005-12-22 Matsushita Electric Ind Co Ltd 露光装置及びパターン形成方法
JP2006024882A (ja) 2004-06-11 2006-01-26 Matsushita Electric Ind Co Ltd 薄膜塗布装置および薄膜塗布方法ならびに液侵露光装置および液侵露光方法
JP4677833B2 (ja) 2004-06-21 2011-04-27 株式会社ニコン 露光装置、及びその部材の洗浄方法、露光装置のメンテナンス方法、メンテナンス機器、並びにデバイス製造方法
US7158208B2 (en) 2004-06-30 2007-01-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7463330B2 (en) 2004-07-07 2008-12-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2006024692A (ja) 2004-07-07 2006-01-26 Toshiba Corp レジストパターン形成方法
JP4740666B2 (ja) 2004-07-07 2011-08-03 富士フイルム株式会社 液浸露光用ポジ型レジスト組成物及びそれを用いたパターン形成方法
US7050147B2 (en) 2004-07-08 2006-05-23 Asml Netherlands B.V. Method of adjusting a height of protrusions on a support surface of a support table, a lithographic projection apparatus, and a support table for supporting an article in a lithographic apparatus
US7259827B2 (en) 2004-07-14 2007-08-21 Asml Netherlands B.V. Diffuser unit, lithographic apparatus, method for homogenizing a beam of radiation, a device manufacturing method and device manufactured thereby
US20060012788A1 (en) 2004-07-19 2006-01-19 Asml Netherlands B.V. Ellipsometer, measurement device and method, and lithographic apparatus and method
US7224427B2 (en) 2004-08-03 2007-05-29 Taiwan Semiconductor Manufacturing Company, Ltd. Megasonic immersion lithography exposure apparatus and method
JP2006049757A (ja) 2004-08-09 2006-02-16 Tokyo Electron Ltd 基板処理方法
JP4772306B2 (ja) 2004-09-06 2011-09-14 株式会社東芝 液浸光学装置及び洗浄方法
WO2006029824A2 (en) 2004-09-16 2006-03-23 Carl Zeiss Smt Ag Monitoring element for lithographic projection systems
US7385670B2 (en) 2004-10-05 2008-06-10 Asml Netherlands B.V. Lithographic apparatus, cleaning system and cleaning method for in situ removing contamination from a component in a lithographic apparatus
TWI436403B (zh) 2004-10-26 2014-05-01 尼康股份有限公司 A cleaning method, a substrate processing method, an exposure apparatus, and an element manufacturing method
US7156925B1 (en) 2004-11-01 2007-01-02 Advanced Micro Devices, Inc. Using supercritical fluids to clean lenses and monitor defects
EP1816671A4 (en) 2004-11-11 2010-01-13 Nikon Corp EXPOSURE METHOD, COMPONENT MANUFACTURING METHOD AND SUBSTRATE
US7362412B2 (en) 2004-11-18 2008-04-22 International Business Machines Corporation Method and apparatus for cleaning a semiconductor substrate in an immersion lithography system
JP4487907B2 (ja) 2004-11-19 2010-06-23 株式会社ニコン メンテナンス方法、露光方法、露光装置及びデバイス製造方法
WO2006062065A1 (ja) 2004-12-06 2006-06-15 Nikon Corporation メンテナンス方法、メンテナンス機器、露光装置、及びデバイス製造方法
JP4752473B2 (ja) 2004-12-09 2011-08-17 株式会社ニコン 露光装置、露光方法及びデバイス製造方法
US7880860B2 (en) 2004-12-20 2011-02-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7378025B2 (en) * 2005-02-22 2008-05-27 Asml Netherlands B.V. Fluid filtration method, fluid filtered thereby, lithographic apparatus and device manufacturing method
US7428038B2 (en) 2005-02-28 2008-09-23 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and apparatus for de-gassing a liquid
KR100921040B1 (ko) 2005-04-26 2009-10-08 미쓰이 가가쿠 가부시키가이샤 액침식 노광용 액체, 그것의 정제 방법 및 액침식 노광 방법
US7078575B1 (en) 2005-06-09 2006-07-18 E. I. Du Pont De Nemours And Company Processes for preparing high purity polycyclic fluoroalkanes
JP2006352032A (ja) 2005-06-20 2006-12-28 Jsr Corp 液浸露光用液体および液浸露光方法
KR20080018158A (ko) 2005-06-21 2008-02-27 가부시키가이샤 니콘 노광 장치 및 노광 방법, 메인터넌스 방법과 디바이스 제조방법
US7262422B2 (en) 2005-07-01 2007-08-28 Spansion Llc Use of supercritical fluid to dry wafer and clean lens in immersion lithography
DE102005040828A1 (de) 2005-08-25 2007-03-08 Carl Zeiss Jena Gmbh Verfahren und Vorrichtung zur Immersion und zur Reinigung der Frontlinse von Mikroskopobjektiven
US7372058B2 (en) 2005-09-27 2008-05-13 Asml Netherlands B.V. Ex-situ removal of deposition on an optical element
US7986395B2 (en) 2005-10-24 2011-07-26 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography apparatus and methods
JP5036996B2 (ja) 2005-10-31 2012-09-26 東京応化工業株式会社 洗浄液および洗浄方法
JP2007123775A (ja) 2005-10-31 2007-05-17 Tokyo Ohka Kogyo Co Ltd 洗浄液および洗浄方法
US8125610B2 (en) 2005-12-02 2012-02-28 ASML Metherlands B.V. Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus
SG151198A1 (en) * 2007-09-27 2009-04-30 Asml Netherlands Bv Methods relating to immersion lithography and an immersion lithographic apparatus
US8629970B2 (en) * 2008-01-23 2014-01-14 Asml Netherlands B.V. Immersion lithographic apparatus with immersion fluid re-circulating system

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