JP2005079584A - リソグラフィ装置およびデバイス製造方法 - Google Patents

リソグラフィ装置およびデバイス製造方法 Download PDF

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Publication number
JP2005079584A
JP2005079584A JP2004247635A JP2004247635A JP2005079584A JP 2005079584 A JP2005079584 A JP 2005079584A JP 2004247635 A JP2004247635 A JP 2004247635A JP 2004247635 A JP2004247635 A JP 2004247635A JP 2005079584 A JP2005079584 A JP 2005079584A
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JP
Japan
Prior art keywords
liquid
immersion liquid
substrate
less
projection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004247635A
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English (en)
Japanese (ja)
Inventor
Marcel Mathijs Theodore Marie Dierichs
マシュス テオドレ マリー ディーリヒス マルセル
Sjoerd Nicolaas Lambertus Donders
ニコラース ラムベルテュス ドンデルス ショエルト
Johannes Henricus Wilhelmus Jacobs
ヘンリクス ヴィルヘルムス ヤコブス ヨハネス
Hans Jansen
ヤンセン ハンス
Erik Roelof Loopstra
ロエロフ ロープシュトラ エリク
Johannes Sophia Maria Mertens Jeroen
ヨハネス ソフィア マリア メルテンス ジェロエン
Marco Koert Stavenga
コエルト シュタフェンガ マルコ
Bob Streefkerk
シュトレーフケルク ボブ
Martinus Cornelis Maria Verhagen
コーネリス マリア フェルハゲン マルティヌス
Lejla Seuntiens-Gruda
ソインティーンス − グルダ レユラ
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ASML Netherlands BV
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ASML Netherlands BV
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Filing date
Publication date
Application filed by ASML Netherlands BV filed Critical ASML Netherlands BV
Publication of JP2005079584A publication Critical patent/JP2005079584A/ja
Pending legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D61/00—Processes of separation using semi-permeable membranes, e.g. dialysis, osmosis or ultrafiltration; Apparatus, accessories or auxiliary operations specially adapted therefor
    • B01D61/02—Reverse osmosis; Hyperfiltration ; Nanofiltration
    • B01D61/025—Reverse osmosis; Hyperfiltration
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D19/00—Degasification of liquids
    • B01D19/0031—Degasification of liquids by filtration
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00—Treatment of water, waste water, or sewage
    • C02F1/20—Treatment of water, waste water, or sewage by degassing, i.e. liberation of dissolved gases
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00—Treatment of water, waste water, or sewage
    • C02F1/02—Treatment of water, waste water, or sewage by heating
    • C02F1/04—Treatment of water, waste water, or sewage by heating by distillation or evaporation
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00—Treatment of water, waste water, or sewage
    • C02F1/28—Treatment of water, waste water, or sewage by sorption
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00—Treatment of water, waste water, or sewage
    • C02F1/28—Treatment of water, waste water, or sewage by sorption
    • C02F1/283—Treatment of water, waste water, or sewage by sorption using coal, charred products, or inorganic mixtures containing them
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00—Treatment of water, waste water, or sewage
    • C02F1/30—Treatment of water, waste water, or sewage by irradiation
    • C02F1/32—Treatment of water, waste water, or sewage by irradiation with ultraviolet light
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00—Treatment of water, waste water, or sewage
    • C02F1/42—Treatment of water, waste water, or sewage by ion-exchange
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00—Treatment of water, waste water, or sewage
    • C02F1/44—Treatment of water, waste water, or sewage by dialysis, osmosis or reverse osmosis
    • C02F1/441—Treatment of water, waste water, or sewage by dialysis, osmosis or reverse osmosis by reverse osmosis
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F2103/00—Nature of the water, waste water, sewage or sludge to be treated
    • C02F2103/34—Nature of the water, waste water, sewage or sludge to be treated from industrial activities not provided for in groups C02F2103/12 - C02F2103/32
    • C02F2103/40—Nature of the water, waste water, sewage or sludge to be treated from industrial activities not provided for in groups C02F2103/12 - C02F2103/32 from the manufacture or use of photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Water Supply & Treatment (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Nanotechnology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Epidemiology (AREA)
  • Toxicology (AREA)
  • Organic Chemistry (AREA)
  • Public Health (AREA)
  • Atmospheric Sciences (AREA)
  • Hydrology & Water Resources (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Urology & Nephrology (AREA)
JP2004247635A 2003-08-29 2004-08-27 リソグラフィ装置およびデバイス製造方法 Pending JP2005079584A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP03255376 2003-08-29

Related Child Applications (3)

Application Number Title Priority Date Filing Date
JP2007339406A Division JP5008550B2 (ja) 2003-08-29 2007-12-28 リソグラフィ投影装置
JP2008279190A Division JP5008635B2 (ja) 2003-08-29 2008-10-30 リソグラフィ投影装置およびリソグラフィ投影方法
JP2008279191A Division JP5008636B2 (ja) 2003-08-29 2008-10-30 リソグラフィ投影装置およびリソグラフィ投影方法

Publications (1)

Publication Number Publication Date
JP2005079584A true JP2005079584A (ja) 2005-03-24

Family

ID=34400571

Family Applications (5)

Application Number Title Priority Date Filing Date
JP2004247635A Pending JP2005079584A (ja) 2003-08-29 2004-08-27 リソグラフィ装置およびデバイス製造方法
JP2007339406A Expired - Fee Related JP5008550B2 (ja) 2003-08-29 2007-12-28 リソグラフィ投影装置
JP2008279191A Expired - Fee Related JP5008636B2 (ja) 2003-08-29 2008-10-30 リソグラフィ投影装置およびリソグラフィ投影方法
JP2008279190A Expired - Fee Related JP5008635B2 (ja) 2003-08-29 2008-10-30 リソグラフィ投影装置およびリソグラフィ投影方法
JP2011163844A Pending JP2011254092A (ja) 2003-08-29 2011-07-27 リソグラフィ投影装置およびリソグラフィ投影方法

Family Applications After (4)

Application Number Title Priority Date Filing Date
JP2007339406A Expired - Fee Related JP5008550B2 (ja) 2003-08-29 2007-12-28 リソグラフィ投影装置
JP2008279191A Expired - Fee Related JP5008636B2 (ja) 2003-08-29 2008-10-30 リソグラフィ投影装置およびリソグラフィ投影方法
JP2008279190A Expired - Fee Related JP5008635B2 (ja) 2003-08-29 2008-10-30 リソグラフィ投影装置およびリソグラフィ投影方法
JP2011163844A Pending JP2011254092A (ja) 2003-08-29 2011-07-27 リソグラフィ投影装置およびリソグラフィ投影方法

Country Status (8)

Country Link
US (6) US7733459B2 (https=)
EP (3) EP1510872B1 (https=)
JP (5) JP2005079584A (https=)
KR (1) KR100659257B1 (https=)
CN (2) CN101872130B (https=)
DE (1) DE602004029970D1 (https=)
SG (1) SG109609A1 (https=)
TW (1) TWI245163B (https=)

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WO2005122218A1 (ja) * 2004-06-09 2005-12-22 Nikon Corporation 露光装置及びデバイス製造方法
JP2006190997A (ja) * 2004-12-09 2006-07-20 Nikon Corp 露光装置、露光方法及びデバイス製造方法
WO2006080250A1 (ja) * 2005-01-25 2006-08-03 Jsr Corporation 液浸型露光システム、液浸型露光用液体のリサイクル方法及び供給方法
JP2007081373A (ja) * 2005-09-13 2007-03-29 Taiwan Semiconductor Manufacturing Co Ltd 液浸リソグラフィ方法及びその装置
WO2007072818A1 (ja) * 2005-12-19 2007-06-28 Nikon Corporation 液体製造装置、液浸露光装置、及びデバイス製造方法
JP2007286162A (ja) * 2006-04-13 2007-11-01 Nikon Corp 液浸顕微鏡装置
JP2009267405A (ja) * 2008-04-25 2009-11-12 Asml Netherlands Bv 液浸リソグラフィに関する方法及び液浸リソグラフィ装置
JP2011066451A (ja) * 2006-09-07 2011-03-31 Asml Netherlands Bv リソグラフィ装置およびデバイス製造方法
US8072576B2 (en) 2003-05-23 2011-12-06 Nikon Corporation Exposure apparatus and method for producing device
US8125610B2 (en) 2005-12-02 2012-02-28 ASML Metherlands B.V. Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus
JP5040653B2 (ja) * 2005-08-23 2012-10-03 株式会社ニコン 露光装置及び露光方法、並びにデバイス製造方法
US20130271945A1 (en) 2004-02-06 2013-10-17 Nikon Corporation Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method
US9341954B2 (en) 2007-10-24 2016-05-17 Nikon Corporation Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
US9423698B2 (en) 2003-10-28 2016-08-23 Nikon Corporation Illumination optical apparatus and projection exposure apparatus
US9678437B2 (en) 2003-04-09 2017-06-13 Nikon Corporation Illumination optical apparatus having distribution changing member to change light amount and polarization member to set polarization in circumference direction
US9678332B2 (en) 2007-11-06 2017-06-13 Nikon Corporation Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method
US9885872B2 (en) 2003-11-20 2018-02-06 Nikon Corporation Illumination optical apparatus, exposure apparatus, and exposure method with optical integrator and polarization member that changes polarization state of light
US9891539B2 (en) 2005-05-12 2018-02-13 Nikon Corporation Projection optical system, exposure apparatus, and exposure method
US9958786B2 (en) 2003-04-11 2018-05-01 Nikon Corporation Cleanup method for optics in immersion lithography using object on wafer holder in place of wafer
US10101666B2 (en) 2007-10-12 2018-10-16 Nikon Corporation Illumination optical apparatus, exposure apparatus, and device manufacturing method
JP2018534608A (ja) * 2015-09-24 2018-11-22 ズース マイクロテク フォトマスク エクイップメント ゲゼルシャフト ミット ベシュレンクテル ハフツング ウント コンパニー コマンディートゲゼルシャフトＳｕｓｓ ＭｉｃｒｏＴｅｃ Ｐｈｏｔｏｍａｓｋ Ｅｑｕｉｐｍｅｎｔ ＧｍｂＨ ＆ Ｃｏ． ＫＧ 紫外線に暴露された水性液体媒体で基板を処理する方法

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US9025127B2 (en) 2015-05-05
CN101872130A (zh) 2010-10-27
EP2256555B1 (en) 2012-05-09
US9581914B2 (en) 2017-02-28
US20050078286A1 (en) 2005-04-14
EP1510872A3 (en) 2005-05-25
JP2009055062A (ja) 2009-03-12
EP1510872B1 (en) 2010-11-10
US7733459B2 (en) 2010-06-08
KR100659257B1 (ko) 2006-12-19
JP2009055061A (ja) 2009-03-12
EP2284613A1 (en) 2011-02-16
EP1510872A2 (en) 2005-03-02
CN1591192A (zh) 2005-03-09
TWI245163B (en) 2005-12-11
KR20050022317A (ko) 2005-03-07
US20120013874A1 (en) 2012-01-19
JP2011254092A (ja) 2011-12-15
US20120013870A1 (en) 2012-01-19
JP2008135769A (ja) 2008-06-12
US20170139333A1 (en) 2017-05-18

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