JP2004363625A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP2004363625A JP2004363625A JP2004232866A JP2004232866A JP2004363625A JP 2004363625 A JP2004363625 A JP 2004363625A JP 2004232866 A JP2004232866 A JP 2004232866A JP 2004232866 A JP2004232866 A JP 2004232866A JP 2004363625 A JP2004363625 A JP 2004363625A
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- semiconductor device
- film
- tft
- display device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 99
- 239000004973 liquid crystal related substance Substances 0.000 claims description 62
- 238000005401 electroluminescence Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 108
- 239000013078 crystal Substances 0.000 description 67
- 239000011159 matrix material Substances 0.000 description 56
- 239000000872 buffer Substances 0.000 description 52
- 239000010410 layer Substances 0.000 description 38
- 238000000034 method Methods 0.000 description 33
- 239000000758 substrate Substances 0.000 description 28
- 239000012535 impurity Substances 0.000 description 26
- 239000010409 thin film Substances 0.000 description 22
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 21
- 230000007547 defect Effects 0.000 description 20
- 238000010586 diagram Methods 0.000 description 20
- 238000004519 manufacturing process Methods 0.000 description 18
- 238000005247 gettering Methods 0.000 description 14
- 230000008569 process Effects 0.000 description 14
- 229910021417 amorphous silicon Inorganic materials 0.000 description 13
- 238000010438 heat treatment Methods 0.000 description 13
- 229910021419 crystalline silicon Inorganic materials 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 11
- 238000002425 crystallisation Methods 0.000 description 11
- 230000008025 crystallization Effects 0.000 description 11
- 239000012298 atmosphere Substances 0.000 description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 10
- 229910052759 nickel Inorganic materials 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 239000003054 catalyst Substances 0.000 description 8
- 229910052736 halogen Inorganic materials 0.000 description 8
- 150000002367 halogens Chemical class 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 230000005540 biological transmission Effects 0.000 description 7
- 239000011229 interlayer Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 229920005591 polysilicon Polymers 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 238000004458 analytical method Methods 0.000 description 6
- 230000003197 catalytic effect Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000010894 electron beam technology Methods 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 229910052698 phosphorus Inorganic materials 0.000 description 6
- 239000011574 phosphorus Substances 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- OMRRUNXAWXNVFW-UHFFFAOYSA-N fluoridochlorine Chemical compound ClF OMRRUNXAWXNVFW-UHFFFAOYSA-N 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- 230000004044 response Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- 239000010407 anodic oxide Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 230000003139 buffering effect Effects 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 230000010287 polarization Effects 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 229910052706 scandium Inorganic materials 0.000 description 4
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 238000002524 electron diffraction data Methods 0.000 description 3
- 230000001747 exhibiting effect Effects 0.000 description 3
- 239000005262 ferroelectric liquid crystals (FLCs) Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005108 dry cleaning Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 2
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 2
- YPSXFMHXRZAGTG-UHFFFAOYSA-N 4-methoxy-2-[2-(5-methoxy-2-nitrosophenyl)ethyl]-1-nitrosobenzene Chemical compound COC1=CC=C(N=O)C(CCC=2C(=CC=C(OC)C=2)N=O)=C1 YPSXFMHXRZAGTG-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000004435 EPR spectroscopy Methods 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 239000004988 Nematic liquid crystal Substances 0.000 description 1
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 1
- 229910008071 Si-Ni Inorganic materials 0.000 description 1
- 229910008045 Si-Si Inorganic materials 0.000 description 1
- 229910006300 Si—Ni Inorganic materials 0.000 description 1
- 229910006285 Si—Ni—Si Inorganic materials 0.000 description 1
- 229910006411 Si—Si Inorganic materials 0.000 description 1
- 239000004990 Smectic liquid crystal Substances 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052795 boron group element Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000004815 dispersion polymer Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002003 electron diffraction Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 150000002366 halogen compounds Chemical group 0.000 description 1
- 238000002173 high-resolution transmission electron microscopy Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 150000003017 phosphorus Chemical class 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052696 pnictogen Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3674—Details of drivers for scan electrodes
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3648—Control of matrices with row and column drivers using an active matrix
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3685—Details of drivers for data electrodes
- G09G3/3688—Details of drivers for data electrodes suitable for active matrices only
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
- G09G2300/0404—Matrix technologies
- G09G2300/0408—Integration of the drivers onto the display substrate
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
- G09G2310/0264—Details of driving circuits
- G09G2310/027—Details of drivers for data electrodes, the drivers handling digital grey scale data, e.g. use of D/A converters
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
- G09G2310/0264—Details of driving circuits
- G09G2310/0286—Details of a shift registers arranged for use in a driving circuit
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/02—Improving the quality of display appearance
- G09G2320/0233—Improving the luminance or brightness uniformity across the screen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Liquid Crystal Display Device Control (AREA)
- Shift Register Type Memory (AREA)
- Electroluminescent Light Sources (AREA)
- Control Of El Displays (AREA)
- Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Logic Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electronic Switches (AREA)
Abstract
【解決手段】 Nチャネル型TFTと複数のPチャネル型TFTとを有するインバータ回路を有し、前記複数のPチャネル型TFTは互いに並列に接続されていることを特徴とする。また、前記複数のPチャネル型TFTそれぞれはチャネル幅が100μm以下であることを特徴とする。また、Pチャネル型TFTと複数のNチャネル型TFTとを有するインバータ回路を有し、前記複数のNチャネル型TFTは互いに並列に接続されていることを特徴とする。また、前記複数のNチャネル型TFTそれぞれはチャネル幅が100μm以下であることを特徴とする。
【選択図】 図4
Description
フタ107に供給される。レベルシフタ107によってデジタルビデオデータの電圧レベルは上げられ、D/A変換回路108に供給される。D/A変換回路108は、4ビットのデジタルビデオデータをアナログ信号(階調電圧)に変換し、セレクタ回路(2)によって選択されるソース信号線に順次供給される。ソース信号線に供給されるアナログ信号は、ソース信号線に接続されている画素マトリクス回路の画素TFTのソース領域に供給される。
タートパルス(SP)が供給され、LRがLoのとき一番右側のフリップフロップ回路(図示せず)にスタートパルス(SP)が供給される。
(好ましくは90μm以下)とすればよい。
型TFTと3個の独立したNチャネル型TFTとが独立した半導体層上に形成され、コンタクトを介して金属配線などによって接続されるようにしても良い。しかし、本実施例の場合の方がよりインバータ307の小面積化が図れるので好ましい。
代わりに他の半導体薄膜を用いてもよい。例えば、SiX Ge1-X (0<X<1)で示される珪素とゲルマニウムの化合物を用いることも可能である。
域の成長距離の制御が容易となるので、微細化した回路を構成する際に有効な技術となる。
等のハロゲンを含む化合物から選ばれた一種または複数種のものを用いることができる。
以下)ではTFT特性に対するニッケルの影響は確認されなかった。ただし、本明細書
中における不純物濃度は、SIMS分析の測定結果の最小値でもって定義される。
領域を形成する。このn- 領域は、Pイオン濃度が1×1018atoms/cm3 〜1×1019atoms/cm3 となるように調節する。
この時は、加速電圧が低いので、ゲイト絶縁膜がマスクとして機能する。また、このn+ 領域は、シート抵抗が500Ω以下(好ましくは300Ω以下)となるように調節する。
)。
よって、シール材やスペーサ(共に図示せず)などを介して貼り合わせる。その後、両基板の間に液晶材料955を注入し、封止剤(図示せず)によって完全に封止する。よって、図12に示すような透過型のアクティブマトリクス型液晶表示装置が完成する
ことが確認できる。一方、図16(b)に示す従来の高温ポリシリコン膜の場合、回折スポットには明瞭な規則性が見られず、{110}面以外の面方位の結晶粒が不規則に混在することが判明した。
いる積層欠陥であるが、転位などの場合もある。図17(a)は{111}面に平行な欠陥面を有する積層欠陥と思われる。そのことは、ジグザグ状に見える欠陥が約70°の角度をなして折れ曲がっていることからも確認できる。
光学的特性が変調され得るその他のいかなる表示媒体を備えた表示装置の駆動回路に用いてもよい。例えば、エレクトロルミネセンス素子などを用いた表示装置の駆動回路に用いても良い。
装置2303を3個(R、G、Bの光にそれぞれ対応させる)使用することによって、さらに高解像度・高精細のフロント型プロジェクタを実現することができる。
102 シフトレジスタ回路
103 バッファ回路
104 ラッチ回路(1)
105 ラッチ回路(2)
106 セレクタ回路(1)
107 レベルシフタ回路
108 D/A変換回路
109 セレクタ回路(2)
110 デジタルビデオデータ分割回路
111 ソース信号線側駆動回路(B)
112 ゲイト信号線側駆動回路(A)
113 シフトレジスタ回路
114 バッファ回路
115 ゲイト信号線側駆動回路(B)
116 画素マトリクス回路
Claims (17)
- Nチャネル型TFTと複数のPチャネル型TFTとを有するインバータ回路を有し、
前記複数のPチャネル型TFTは互いに並列に接続されていることを特徴とする半導体装置。 - 請求項1において、前記複数のPチャネル型TFTそれぞれはチャネル幅が100μm以下であることを特徴とする半導体装置。
- Pチャネル型TFTと複数のNチャネル型TFTとを有するインバータ回路を有し、
前記複数のNチャネル型TFTは互いに並列に接続されていることを特徴とする半導体装置。 - 請求項3において、前記複数のNチャネル型TFTそれぞれはチャネル幅が100μm以下であることを特徴とする半導体装置。
- 請求項1乃至4のいずれか一において、前記インバータ回路の出力により画像信号をサンプリングすることを特徴とする半導体装置。
- 請求項1乃至4のいずれか一において、前記インバータ回路の出力により走査線を選択することを特徴とする半導体装置。
- 請求項1乃至6のいずれか一において、液晶素子を有することを特徴とする半導体装置。
- 請求項1乃至6のいずれか一において、エレクトロルミネセンス素子を有することを特徴とする半導体装置。
- 請求項1乃至8のいずれか一において、前記半導体装置はビデオカメラであることを特徴とする半導体装置。
- 請求項1乃至8のいずれか一において、前記半導体装置はスチルカメラであることを特徴とする半導体装置。
- 請求項1乃至8のいずれか一において、前記半導体装置はプロジェクタであることを特徴とする半導体装置。
- 請求項1乃至8のいずれか一において、前記半導体装置はヘッドマウントディスプレイであることを特徴とする半導体装置。
- 請求項1乃至8のいずれか一において、前記半導体装置はナビゲーション装置であることを特徴とする半導体装置。
- 請求項1乃至8のいずれか一において、前記半導体装置はパーソナルコンピュータであることを特徴とする半導体装置。
- 請求項1乃至8のいずれか一において、前記半導体装置は携帯情報端末であることを特徴とする半導体装置。
- 請求項1乃至8のいずれか一において、前記半導体装置はモバイルコンピュータであることを特徴とする半導体装置。
- 請求項1乃至8のいずれか一において、前記半導体装置は携帯電話であることを特徴とする半導体装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1998100638 | 1998-03-27 | ||
JP10063898 | 1998-03-27 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11047580A Division JPH11338439A (ja) | 1998-03-27 | 1999-02-25 | 半導体表示装置の駆動回路および半導体表示装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2004363625A true JP2004363625A (ja) | 2004-12-24 |
JP4823494B2 JP4823494B2 (ja) | 2011-11-24 |
Family
ID=14279380
Family Applications (10)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11047580A Withdrawn JPH11338439A (ja) | 1998-03-27 | 1999-02-25 | 半導体表示装置の駆動回路および半導体表示装置 |
JP2003008654A Expired - Fee Related JP4198477B2 (ja) | 1998-03-27 | 2003-01-16 | 液晶表示装置の駆動回路および液晶表示装置 |
JP2003008418A Withdrawn JP2003308038A (ja) | 1998-03-27 | 2003-01-16 | 半導体表示装置の駆動回路および半導体表示装置 |
JP2004232866A Expired - Lifetime JP4823494B2 (ja) | 1998-03-27 | 2004-08-10 | 半導体表示装置 |
JP2008191294A Withdrawn JP2009025822A (ja) | 1998-03-27 | 2008-07-24 | 半導体装置 |
JP2011178179A Withdrawn JP2012014183A (ja) | 1998-03-27 | 2011-08-17 | バッファ回路 |
JP2013160290A Withdrawn JP2014002396A (ja) | 1998-03-27 | 2013-08-01 | 半導体装置 |
JP2015027715A Withdrawn JP2015146420A (ja) | 1998-03-27 | 2015-02-16 | 半導体装置 |
JP2015027716A Expired - Lifetime JP5933776B2 (ja) | 1998-03-27 | 2015-02-16 | 半導体装置 |
JP2016134307A Withdrawn JP2016213863A (ja) | 1998-03-27 | 2016-07-06 | 半導体装置 |
Family Applications Before (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11047580A Withdrawn JPH11338439A (ja) | 1998-03-27 | 1999-02-25 | 半導体表示装置の駆動回路および半導体表示装置 |
JP2003008654A Expired - Fee Related JP4198477B2 (ja) | 1998-03-27 | 2003-01-16 | 液晶表示装置の駆動回路および液晶表示装置 |
JP2003008418A Withdrawn JP2003308038A (ja) | 1998-03-27 | 2003-01-16 | 半導体表示装置の駆動回路および半導体表示装置 |
Family Applications After (6)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008191294A Withdrawn JP2009025822A (ja) | 1998-03-27 | 2008-07-24 | 半導体装置 |
JP2011178179A Withdrawn JP2012014183A (ja) | 1998-03-27 | 2011-08-17 | バッファ回路 |
JP2013160290A Withdrawn JP2014002396A (ja) | 1998-03-27 | 2013-08-01 | 半導体装置 |
JP2015027715A Withdrawn JP2015146420A (ja) | 1998-03-27 | 2015-02-16 | 半導体装置 |
JP2015027716A Expired - Lifetime JP5933776B2 (ja) | 1998-03-27 | 2015-02-16 | 半導体装置 |
JP2016134307A Withdrawn JP2016213863A (ja) | 1998-03-27 | 2016-07-06 | 半導体装置 |
Country Status (4)
Country | Link |
---|---|
US (7) | US6549184B1 (ja) |
JP (10) | JPH11338439A (ja) |
DE (1) | DE19913920A1 (ja) |
TW (1) | TW459267B (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009025822A (ja) * | 1998-03-27 | 2009-02-05 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
KR100998488B1 (ko) * | 2008-06-25 | 2010-12-06 | 주식회사 하이닉스반도체 | 상이한 크기를 갖는 복수의 인버터를 포함하는 지연 회로구조 |
US8654045B2 (en) | 2006-07-31 | 2014-02-18 | Sony Corporation | Display and method for manufacturing display |
Families Citing this family (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3897826B2 (ja) * | 1994-08-19 | 2007-03-28 | 株式会社半導体エネルギー研究所 | アクティブマトリクス型の表示装置 |
US6686623B2 (en) * | 1997-11-18 | 2004-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Nonvolatile memory and electronic apparatus |
JP4090569B2 (ja) | 1997-12-08 | 2008-05-28 | 株式会社半導体エネルギー研究所 | 半導体装置、液晶表示装置及びel表示装置 |
US6268842B1 (en) * | 1998-04-13 | 2001-07-31 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor circuit and semiconductor display device using the same |
JP2000012864A (ja) * | 1998-06-22 | 2000-01-14 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
US6271101B1 (en) * | 1998-07-29 | 2001-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Process for production of SOI substrate and process for production of semiconductor device |
JP3846057B2 (ja) * | 1998-09-03 | 2006-11-15 | セイコーエプソン株式会社 | 電気光学装置の駆動回路及び電気光学装置並びに電子機器 |
JP4476390B2 (ja) * | 1998-09-04 | 2010-06-09 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP3535067B2 (ja) | 2000-03-16 | 2004-06-07 | シャープ株式会社 | 液晶表示装置 |
US6831299B2 (en) | 2000-11-09 | 2004-12-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US7700295B2 (en) * | 2000-12-28 | 2010-04-20 | Mds Sciex | Elemental analysis of tagged biologically active materials |
JP3800401B2 (ja) * | 2001-06-18 | 2006-07-26 | 株式会社日立製作所 | 画像表示装置及びその駆動方法 |
US7012597B2 (en) * | 2001-08-02 | 2006-03-14 | Seiko Epson Corporation | Supply of a programming current to a pixel |
EP1300826A3 (en) | 2001-10-03 | 2009-11-18 | Nec Corporation | Display device and semiconductor device |
KR100940342B1 (ko) | 2001-11-13 | 2010-02-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시장치 및 그 구동방법 |
JP2003332578A (ja) | 2002-05-09 | 2003-11-21 | Sharp Corp | 薄膜トランジスタ及びその製造方法並びにこれを用いた液晶表示装置 |
JP4683833B2 (ja) * | 2003-10-31 | 2011-05-18 | 株式会社半導体エネルギー研究所 | 機能回路及びその設計方法 |
SG115733A1 (en) * | 2004-03-12 | 2005-10-28 | Semiconductor Energy Lab | Thin film transistor, semiconductor device, and method for manufacturing the same |
JP4834853B2 (ja) * | 2004-06-10 | 2011-12-14 | シャープ株式会社 | 薄膜トランジスタ回路、薄膜トランジスタ回路の設計方法、薄膜トランジスタ回路の設計プログラム、設計プログラム記録媒体、及び表示装置 |
EP1863090A1 (en) | 2006-06-01 | 2007-12-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
JP4720654B2 (ja) * | 2006-07-10 | 2011-07-13 | セイコーエプソン株式会社 | 電気光学装置の駆動回路及び電気光学装置並びに電子機器 |
KR101277975B1 (ko) * | 2006-09-07 | 2013-06-27 | 엘지디스플레이 주식회사 | 쉬프트 레지스터 및 이를 구비한 데이터 드라이버,액정표시장치 |
US8093601B2 (en) | 2006-09-26 | 2012-01-10 | Sharp Kabushiki Kaisha | Active matrix substrate |
KR100882696B1 (ko) * | 2006-12-21 | 2009-02-06 | 삼성모바일디스플레이주식회사 | 외광 감지센서 및 이를 이용한 액정 표시장치 |
JP4456129B2 (ja) | 2007-01-31 | 2010-04-28 | シャープ株式会社 | 半導体装置および液晶表示装置および電子機器 |
JP2008233536A (ja) | 2007-03-20 | 2008-10-02 | Sony Corp | 表示装置 |
JP2009014796A (ja) | 2007-06-30 | 2009-01-22 | Sony Corp | El表示パネル、電源線駆動装置及び電子機器 |
KR101623958B1 (ko) | 2008-10-01 | 2016-05-25 | 삼성전자주식회사 | 인버터 및 그의 동작방법과 인버터를 포함하는 논리회로 |
TWI633605B (zh) | 2008-10-31 | 2018-08-21 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
TWI664619B (zh) | 2009-01-16 | 2019-07-01 | 日商半導體能源研究所股份有限公司 | 液晶顯示裝置及其電子裝置 |
TW201039307A (en) * | 2009-04-24 | 2010-11-01 | Princeton Technology Corp | Liquid crystal display |
JP5581261B2 (ja) * | 2011-04-27 | 2014-08-27 | 株式会社ジャパンディスプレイ | 半導体装置、表示装置および電子機器 |
JP2013068964A (ja) * | 2012-11-30 | 2013-04-18 | Panasonic Corp | El表示装置 |
JP5764185B2 (ja) * | 2013-11-22 | 2015-08-12 | 株式会社Joled | El表示装置 |
CN103761952B (zh) * | 2013-12-31 | 2016-01-27 | 深圳市华星光电技术有限公司 | 一种液晶面板的扫描驱动电路、液晶面板和一种驱动方法 |
CN104537995A (zh) * | 2014-12-30 | 2015-04-22 | 深圳市华星光电技术有限公司 | 栅极驱动电路以及移位寄存器 |
TWI563488B (en) * | 2016-02-01 | 2016-12-21 | Sitronix Technology Corp | Gate driving circuit |
CN205621414U (zh) * | 2016-04-26 | 2016-10-05 | 京东方科技集团股份有限公司 | 静电放电电路、阵列基板和显示装置 |
US10541375B2 (en) * | 2016-07-21 | 2020-01-21 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device |
TWI688812B (zh) * | 2018-11-21 | 2020-03-21 | 友達光電股份有限公司 | 顯示裝置 |
CN110517628B (zh) * | 2019-08-30 | 2021-03-05 | 京东方科技集团股份有限公司 | 显示装置、栅极驱动电路、移位寄存电路及其驱动方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05303080A (ja) * | 1992-04-24 | 1993-11-16 | Seiko Epson Corp | アクティブマトリクスパネル |
JPH0653813A (ja) * | 1992-02-18 | 1994-02-25 | Natl Semiconductor Corp <Ns> | 大ダイナミック電流と小スタティック電流のための二重しきい値電圧を有するttlからcmosへ移行する入力バッファー回路 |
JPH07327185A (ja) * | 1994-05-31 | 1995-12-12 | Sharp Corp | サンプリング回路およびそれを用いた画像表示装置 |
JPH08146918A (ja) * | 1994-11-18 | 1996-06-07 | Sony Corp | スイッチング装置及びスイッチング方法 |
JPH0936730A (ja) * | 1995-07-19 | 1997-02-07 | Yozan:Kk | インバータ回路 |
JPH0974204A (ja) * | 1995-09-04 | 1997-03-18 | Casio Comput Co Ltd | 表示駆動装置 |
Family Cites Families (108)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4178605A (en) | 1978-01-30 | 1979-12-11 | Rca Corp. | Complementary MOS inverter structure |
JPS5710533A (en) * | 1980-06-23 | 1982-01-20 | Nec Corp | Logical circuit |
JPS57132191A (en) * | 1981-02-10 | 1982-08-16 | Suwa Seikosha Kk | Active matrix substrate |
GB2081018B (en) | 1980-07-31 | 1985-06-26 | Suwa Seikosha Kk | Active matrix assembly for display device |
US4330363A (en) | 1980-08-28 | 1982-05-18 | Xerox Corporation | Thermal gradient control for enhanced laser induced crystallization of predefined semiconductor areas |
JPS58127318A (ja) | 1982-01-25 | 1983-07-29 | Nippon Telegr & Teleph Corp <Ntt> | 絶縁層上への単結晶膜形成方法 |
JPS58127318U (ja) | 1982-02-24 | 1983-08-29 | 株式会社日立製作所 | 流量測定装置 |
JPS58176929A (ja) | 1982-04-09 | 1983-10-17 | Fujitsu Ltd | 半導体装置の製造方法 |
US4466179A (en) | 1982-10-19 | 1984-08-21 | Harris Corporation | Method for providing polysilicon thin films of improved uniformity |
JPS59161014A (ja) | 1983-03-03 | 1984-09-11 | Seiko Instr & Electronics Ltd | 半導体薄膜結晶化方法 |
JPS59161014U (ja) | 1983-04-14 | 1984-10-29 | 宮田 磯之助 | 垂直検出器 |
JPH051893Y2 (ja) | 1985-09-11 | 1993-01-19 | ||
JPH0628425B2 (ja) * | 1986-05-20 | 1994-04-13 | 三洋電機株式会社 | 画像表示装置の駆動回路 |
DE3750870T2 (de) | 1986-05-13 | 1995-06-29 | Sanyo Electric Co | Antriebsschaltung einer bildanzeigevorrichtung. |
JPH0628426B2 (ja) * | 1986-05-20 | 1994-04-13 | 三洋電機株式会社 | 画像表示装置の駆動回路 |
JPS62268161A (ja) | 1986-05-16 | 1987-11-20 | Hitachi Ltd | 薄膜トランジスタ素子 |
JPH065752B2 (ja) | 1986-06-25 | 1994-01-19 | 株式会社東芝 | 電界効果トランジスタ |
US4797629A (en) | 1988-03-03 | 1989-01-10 | National Semiconductor Corporation | Wide range operational amplifier input stage |
US4877980A (en) | 1988-03-10 | 1989-10-31 | Advanced Micro Devices, Inc. | Time variant drive circuit for high speed bus driver to limit oscillations or ringing on a bus |
US5274279A (en) | 1988-05-17 | 1993-12-28 | Seiko Epson Corporation | Thin film CMOS inverter |
JP2653099B2 (ja) | 1988-05-17 | 1997-09-10 | セイコーエプソン株式会社 | アクティブマトリクスパネル,投写型表示装置及びビューファインダー |
JPH0279091A (ja) | 1988-09-16 | 1990-03-19 | Hitachi Ltd | 液晶表示パネル |
JP2767858B2 (ja) | 1989-02-09 | 1998-06-18 | ソニー株式会社 | 液晶ディスプレイ装置 |
US4999529A (en) | 1989-06-30 | 1991-03-12 | At&T Bell Laboratories | Programmable logic level input buffer |
JPH0794744B2 (ja) | 1989-08-07 | 1995-10-11 | 昭和コンクリート工業株式会社 | 被土圧部材に添設される発泡樹脂部材 |
JPH03141391A (ja) | 1989-10-27 | 1991-06-17 | Fuji Electric Co Ltd | 多出力ドライバ集積回路 |
US5247375A (en) | 1990-03-09 | 1993-09-21 | Hitachi, Ltd. | Display device, manufacturing method thereof and display panel |
DE69112698T2 (de) * | 1990-05-07 | 1996-02-15 | Fujitsu Ltd | Anzeigeeinrichtung von höher Qualität mit aktiver Matrix. |
JP2973492B2 (ja) | 1990-08-22 | 1999-11-08 | ソニー株式会社 | 半導体薄膜の結晶化方法 |
JPH04313732A (ja) * | 1990-12-29 | 1992-11-05 | Semiconductor Energy Lab Co Ltd | プロジェクター |
JPH04282869A (ja) | 1991-03-11 | 1992-10-07 | G T C:Kk | 薄膜半導体装置の製造方法及びこれを実施するための装置 |
JP2587546B2 (ja) | 1991-03-22 | 1997-03-05 | 株式会社ジーティシー | 走査回路 |
US5365875A (en) | 1991-03-25 | 1994-11-22 | Fuji Xerox Co., Ltd. | Semiconductor element manufacturing method |
JP2927051B2 (ja) | 1991-06-25 | 1999-07-28 | 株式会社デンソー | 熱交換器 |
GB9114018D0 (en) | 1991-06-28 | 1991-08-14 | Philips Electronic Associated | Thin-film transistor manufacture |
JPH0591447A (ja) | 1991-09-25 | 1993-04-09 | Toshiba Corp | 透過形液晶表示装置 |
KR100269350B1 (ko) | 1991-11-26 | 2000-10-16 | 구본준 | 박막트랜지스터의제조방법 |
JPH0726573Y2 (ja) | 1991-12-16 | 1995-06-14 | 正一 山口 | シールナット |
JPH05175235A (ja) | 1991-12-25 | 1993-07-13 | Sharp Corp | 多結晶半導体薄膜の製造方法 |
US5227679A (en) | 1992-01-02 | 1993-07-13 | Advanced Micro Devices, Inc. | Cmos digital-controlled delay gate |
US5372836A (en) | 1992-03-27 | 1994-12-13 | Tokyo Electron Limited | Method of forming polycrystalling silicon film in process of manufacturing LCD |
GB9207527D0 (en) | 1992-04-07 | 1992-05-20 | Philips Electronics Uk Ltd | Multi-standard video matrix display apparatus and its method of operation |
US5250852A (en) * | 1992-04-16 | 1993-10-05 | Texas Instruments Incorporated | Circuitry and method for latching a logic state |
US5627557A (en) | 1992-08-20 | 1997-05-06 | Sharp Kabushiki Kaisha | Display apparatus |
JP2697507B2 (ja) | 1992-08-28 | 1998-01-14 | セイコーエプソン株式会社 | 液晶表示装置 |
JPH06123896A (ja) | 1992-10-13 | 1994-05-06 | Toshiba Corp | 液晶表示装置 |
CN1088002A (zh) | 1992-11-16 | 1994-06-15 | 东京电子株式会社 | 制造液晶显示器基板及评价半导体晶体的方法与装置 |
US5403762A (en) | 1993-06-30 | 1995-04-04 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating a TFT |
US5459337A (en) * | 1993-02-19 | 1995-10-17 | Sony Corporation | Semiconductor display device with red, green and blue emission |
US5471225A (en) * | 1993-04-28 | 1995-11-28 | Dell Usa, L.P. | Liquid crystal display with integrated frame buffer |
US5594569A (en) | 1993-07-22 | 1997-01-14 | Semiconductor Energy Laboratory Co., Ltd. | Liquid-crystal electro-optical apparatus and method of manufacturing the same |
US5610414A (en) | 1993-07-28 | 1997-03-11 | Sharp Kabushiki Kaisha | Semiconductor device |
US5589406A (en) | 1993-07-30 | 1996-12-31 | Ag Technology Co., Ltd. | Method of making TFT display |
US5477073A (en) | 1993-08-20 | 1995-12-19 | Casio Computer Co., Ltd. | Thin film semiconductor device including a driver and a matrix circuit |
US5566080A (en) | 1993-09-07 | 1996-10-15 | Fujitsu Limited | Method and apparatus for designing semiconductor device |
EP0674207B1 (en) | 1993-09-09 | 2001-11-28 | Kabushiki Kaisha Toshiba | Display device |
JPH0794744A (ja) | 1993-09-20 | 1995-04-07 | Hitachi Ltd | Misトランジスタ |
TW264575B (ja) | 1993-10-29 | 1995-12-01 | Handotai Energy Kenkyusho Kk | |
JP3431033B2 (ja) | 1993-10-29 | 2003-07-28 | 株式会社半導体エネルギー研究所 | 半導体作製方法 |
US5923962A (en) | 1993-10-29 | 1999-07-13 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device |
TW299897U (en) | 1993-11-05 | 1997-03-01 | Semiconductor Energy Lab | A semiconductor integrated circuit |
JP2759415B2 (ja) | 1993-11-05 | 1998-05-28 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JPH07147411A (ja) * | 1993-11-24 | 1995-06-06 | Sony Corp | 表示素子基板用半導体装置 |
US5734366A (en) | 1993-12-09 | 1998-03-31 | Sharp Kabushiki Kaisha | Signal amplifier, signal amplifier circuit, signal line drive circuit and image display device |
JP3277056B2 (ja) | 1993-12-09 | 2002-04-22 | シャープ株式会社 | 信号増幅回路及びこれを用いた画像表示装置 |
TW255032B (ja) * | 1993-12-20 | 1995-08-21 | Sharp Kk | |
TW277129B (ja) | 1993-12-24 | 1996-06-01 | Sharp Kk | |
JPH07181927A (ja) | 1993-12-24 | 1995-07-21 | Sharp Corp | 画像表示装置 |
JP3442449B2 (ja) | 1993-12-25 | 2003-09-02 | 株式会社半導体エネルギー研究所 | 表示装置及びその駆動回路 |
US5616935A (en) * | 1994-02-08 | 1997-04-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor integrated circuit having N-channel and P-channel transistors |
JPH07294961A (ja) | 1994-04-22 | 1995-11-10 | Semiconductor Energy Lab Co Ltd | アクティブマトリクス型表示装置の駆動回路および設計方法 |
TW280037B (en) | 1994-04-22 | 1996-07-01 | Handotai Energy Kenkyusho Kk | Drive circuit of active matrix type display device and manufacturing method |
JP3101178B2 (ja) | 1994-04-22 | 2000-10-23 | 株式会社半導体エネルギー研究所 | アクティブマトリクス型表示装置の駆動回路及びその製造方法 |
JP3407975B2 (ja) | 1994-05-20 | 2003-05-19 | 株式会社半導体エネルギー研究所 | 薄膜半導体集積回路 |
CN1136529C (zh) | 1994-05-31 | 2004-01-28 | 夏普株式会社 | 信号放大器和图像显示装置 |
JP3897826B2 (ja) | 1994-08-19 | 2007-03-28 | 株式会社半導体エネルギー研究所 | アクティブマトリクス型の表示装置 |
JP3464287B2 (ja) | 1994-09-05 | 2003-11-05 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP3382026B2 (ja) * | 1994-09-13 | 2003-03-04 | 株式会社東芝 | クロック信号分配回路及びバッファ回路ならびにそれらの設計方法 |
JP2815311B2 (ja) | 1994-09-28 | 1998-10-27 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 液晶表示装置の駆動装置及び方法 |
EP0709892B1 (en) | 1994-09-30 | 2002-03-06 | Yozan Inc. | MOS inverter circuit |
JPH08125027A (ja) | 1994-10-24 | 1996-05-17 | Yozan:Kk | Mosインバータ回路の形成方法 |
DE19540146B4 (de) | 1994-10-27 | 2012-06-21 | Nec Corp. | Flüssigkristallanzeige vom aktiven Matrixtyp mit Treibern für Multimedia-Anwendungen und Ansteuerverfahren dafür |
KR100385254B1 (ko) | 1994-11-21 | 2003-08-21 | 세이코 엡슨 가부시키가이샤 | 액정구동장치,액정표시장치,아날로그버퍼및액정구동방법 |
JP3469337B2 (ja) | 1994-12-16 | 2003-11-25 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JPH08264802A (ja) | 1995-03-28 | 1996-10-11 | Semiconductor Energy Lab Co Ltd | 半導体作製方法、薄膜トランジスタ作製方法および薄膜トランジスタ |
US5956581A (en) | 1995-04-20 | 1999-09-21 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
JP3234131B2 (ja) | 1995-06-23 | 2001-12-04 | 株式会社東芝 | 液晶表示装置 |
JPH098314A (ja) * | 1995-06-26 | 1997-01-10 | Sharp Corp | 薄膜トランジスタ |
JP3286152B2 (ja) * | 1995-06-29 | 2002-05-27 | シャープ株式会社 | 薄膜トランジスタ回路および画像表示装置 |
JP3256110B2 (ja) | 1995-09-28 | 2002-02-12 | シャープ株式会社 | 液晶表示装置 |
KR100205259B1 (ko) | 1996-03-04 | 1999-07-01 | 구자홍 | 액티브매트릭스 액정디스플레이의 구동회로 |
JPH09260962A (ja) * | 1996-03-19 | 1997-10-03 | Sharp Corp | インバータ回路及び増幅器 |
JP3338281B2 (ja) | 1996-03-19 | 2002-10-28 | 株式会社東芝 | 液晶表示パネル |
JPH09330059A (ja) * | 1996-06-13 | 1997-12-22 | Hitachi Ltd | 液晶表示装置 |
CN100502047C (zh) | 1996-06-28 | 2009-06-17 | 精工爱普生株式会社 | 薄膜晶体管 |
US7195960B2 (en) | 1996-06-28 | 2007-03-27 | Seiko Epson Corporation | Thin film transistor, manufacturing method thereof, and circuit and liquid crystal display device using the thin film transistor |
US6429120B1 (en) | 2000-01-18 | 2002-08-06 | Micron Technology, Inc. | Methods and apparatus for making integrated-circuit wiring from copper, silver, gold, and other metals |
JP4307574B2 (ja) | 1996-09-03 | 2009-08-05 | 株式会社半導体エネルギー研究所 | アクティブマトリクス表示装置 |
US5945970A (en) | 1996-09-06 | 1999-08-31 | Samsung Electronics Co., Ltd. | Liquid crystal display devices having improved screen clearing capability and methods of operating same |
JP3795606B2 (ja) | 1996-12-30 | 2006-07-12 | 株式会社半導体エネルギー研究所 | 回路およびそれを用いた液晶表示装置 |
JP3915194B2 (ja) | 1997-10-09 | 2007-05-16 | 石川島播磨重工業株式会社 | ダイクッション上昇方法及び装置 |
JPH11214700A (ja) | 1998-01-23 | 1999-08-06 | Semiconductor Energy Lab Co Ltd | 半導体表示装置 |
JPH11338439A (ja) * | 1998-03-27 | 1999-12-10 | Semiconductor Energy Lab Co Ltd | 半導体表示装置の駆動回路および半導体表示装置 |
US6268842B1 (en) | 1998-04-13 | 2001-07-31 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor circuit and semiconductor display device using the same |
JP3844613B2 (ja) | 1998-04-28 | 2006-11-15 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタ回路およびそれを用いた表示装置 |
US6831299B2 (en) | 2000-11-09 | 2004-12-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JPWO2005041301A1 (ja) | 2003-10-23 | 2007-04-26 | 日本電気株式会社 | 半導体装置及びその製造方法 |
JP5042518B2 (ja) | 2006-04-12 | 2012-10-03 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
-
1999
- 1999-02-25 JP JP11047580A patent/JPH11338439A/ja not_active Withdrawn
- 1999-03-24 TW TW088104655A patent/TW459267B/zh not_active IP Right Cessation
- 1999-03-24 US US09/275,426 patent/US6549184B1/en not_active Expired - Lifetime
- 1999-03-26 DE DE19913920A patent/DE19913920A1/de not_active Withdrawn
-
2003
- 2003-01-14 US US10/341,470 patent/US7304625B2/en not_active Expired - Fee Related
- 2003-01-16 JP JP2003008654A patent/JP4198477B2/ja not_active Expired - Fee Related
- 2003-01-16 JP JP2003008418A patent/JP2003308038A/ja not_active Withdrawn
-
2004
- 2004-04-20 US US10/827,438 patent/US7315296B2/en not_active Expired - Fee Related
- 2004-08-10 JP JP2004232866A patent/JP4823494B2/ja not_active Expired - Lifetime
-
2007
- 2007-12-31 US US12/003,698 patent/US8054270B2/en not_active Expired - Fee Related
-
2008
- 2008-07-24 JP JP2008191294A patent/JP2009025822A/ja not_active Withdrawn
-
2011
- 2011-08-17 JP JP2011178179A patent/JP2012014183A/ja not_active Withdrawn
- 2011-11-04 US US13/289,488 patent/US8373631B2/en not_active Expired - Fee Related
-
2013
- 2013-02-11 US US13/763,895 patent/US8629823B2/en not_active Expired - Fee Related
- 2013-08-01 JP JP2013160290A patent/JP2014002396A/ja not_active Withdrawn
-
2014
- 2014-01-13 US US14/153,667 patent/US9262978B2/en not_active Expired - Fee Related
-
2015
- 2015-02-16 JP JP2015027715A patent/JP2015146420A/ja not_active Withdrawn
- 2015-02-16 JP JP2015027716A patent/JP5933776B2/ja not_active Expired - Lifetime
-
2016
- 2016-07-06 JP JP2016134307A patent/JP2016213863A/ja not_active Withdrawn
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0653813A (ja) * | 1992-02-18 | 1994-02-25 | Natl Semiconductor Corp <Ns> | 大ダイナミック電流と小スタティック電流のための二重しきい値電圧を有するttlからcmosへ移行する入力バッファー回路 |
JPH05303080A (ja) * | 1992-04-24 | 1993-11-16 | Seiko Epson Corp | アクティブマトリクスパネル |
JPH07327185A (ja) * | 1994-05-31 | 1995-12-12 | Sharp Corp | サンプリング回路およびそれを用いた画像表示装置 |
JPH08146918A (ja) * | 1994-11-18 | 1996-06-07 | Sony Corp | スイッチング装置及びスイッチング方法 |
JPH0936730A (ja) * | 1995-07-19 | 1997-02-07 | Yozan:Kk | インバータ回路 |
JPH0974204A (ja) * | 1995-09-04 | 1997-03-18 | Casio Comput Co Ltd | 表示駆動装置 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009025822A (ja) * | 1998-03-27 | 2009-02-05 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
US9262978B2 (en) | 1998-03-27 | 2016-02-16 | Semiconductor Energy Laboratory Co., Ltd. | Driving circuit of a semiconductor display device and the semiconductor display device |
US8654045B2 (en) | 2006-07-31 | 2014-02-18 | Sony Corporation | Display and method for manufacturing display |
US8810489B2 (en) | 2006-07-31 | 2014-08-19 | Sony Corporation | Display and method for manufacturing display |
US8994626B2 (en) | 2006-07-31 | 2015-03-31 | Sony Corporation | Display and method for manufacturing display |
KR100998488B1 (ko) * | 2008-06-25 | 2010-12-06 | 주식회사 하이닉스반도체 | 상이한 크기를 갖는 복수의 인버터를 포함하는 지연 회로구조 |
Also Published As
Publication number | Publication date |
---|---|
US20080122773A1 (en) | 2008-05-29 |
US8629823B2 (en) | 2014-01-14 |
US9262978B2 (en) | 2016-02-16 |
DE19913920A1 (de) | 1999-09-30 |
US20130147691A1 (en) | 2013-06-13 |
JP2016213863A (ja) | 2016-12-15 |
JP5933776B2 (ja) | 2016-06-15 |
US8054270B2 (en) | 2011-11-08 |
JP2003308052A (ja) | 2003-10-31 |
JP2015146420A (ja) | 2015-08-13 |
US8373631B2 (en) | 2013-02-12 |
JP2009025822A (ja) | 2009-02-05 |
US20030137480A1 (en) | 2003-07-24 |
US20140191934A1 (en) | 2014-07-10 |
JP4823494B2 (ja) | 2011-11-24 |
JP4198477B2 (ja) | 2008-12-17 |
US6549184B1 (en) | 2003-04-15 |
JP2014002396A (ja) | 2014-01-09 |
US20040196240A1 (en) | 2004-10-07 |
JP2015111726A (ja) | 2015-06-18 |
US7315296B2 (en) | 2008-01-01 |
US20120140136A1 (en) | 2012-06-07 |
US7304625B2 (en) | 2007-12-04 |
TW459267B (en) | 2001-10-11 |
JPH11338439A (ja) | 1999-12-10 |
JP2003308038A (ja) | 2003-10-31 |
JP2012014183A (ja) | 2012-01-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5933776B2 (ja) | 半導体装置 | |
US6597349B1 (en) | Semiconductor display device and method of driving the same | |
US7550790B2 (en) | D/A conversion circuit and semiconductor device | |
US7042432B2 (en) | Thin-film transistor circuit and a semiconductor display using the same | |
JP2001051292A (ja) | 半導体装置および半導体表示装置 | |
JP2000039628A (ja) | 半導体表示装置 | |
JP4104754B2 (ja) | D/a変換回路、半導体装置及び電子機器 | |
JPH11194321A (ja) | 半導体表示装置およびその駆動方法 | |
JP2009093188A (ja) | 半導体表示装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20080617 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20080710 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20080902 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20080923 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20081104 |
|
A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20090109 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110422 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110803 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20110907 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140916 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140916 Year of fee payment: 3 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
EXPY | Cancellation because of completion of term |