JP2001053076A5 - - Google Patents
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- Publication number
- JP2001053076A5 JP2001053076A5 JP1999226876A JP22687699A JP2001053076A5 JP 2001053076 A5 JP2001053076 A5 JP 2001053076A5 JP 1999226876 A JP1999226876 A JP 1999226876A JP 22687699 A JP22687699 A JP 22687699A JP 2001053076 A5 JP2001053076 A5 JP 2001053076A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- insulating film
- silicon oxide
- groove
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical group N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 68
- 230000004888 barrier function Effects 0.000 claims description 66
- 239000002184 metal Substances 0.000 claims description 45
- 229910052751 metal Inorganic materials 0.000 claims description 45
- 238000005498 polishing Methods 0.000 claims description 45
- 239000004065 semiconductor Substances 0.000 claims description 45
- 238000004519 manufacturing process Methods 0.000 claims description 44
- 239000010949 copper Substances 0.000 claims description 39
- 229910021529 ammonia Inorganic materials 0.000 claims description 34
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 30
- 229910052802 copper Inorganic materials 0.000 claims description 30
- 238000004140 cleaning Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 11
- 239000007788 liquid Substances 0.000 claims description 7
- 239000001257 hydrogen Substances 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 239000010410 layer Substances 0.000 claims description 5
- 238000005260 corrosion Methods 0.000 claims description 2
- 230000007797 corrosion Effects 0.000 claims description 2
- 239000011229 interlayer Substances 0.000 claims 59
- 229910052814 silicon oxide Inorganic materials 0.000 claims 47
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 46
- 239000004020 conductor Substances 0.000 claims 43
- 238000000151 deposition Methods 0.000 claims 25
- 239000000758 substrate Substances 0.000 claims 21
- 239000007789 gas Substances 0.000 claims 13
- 238000009792 diffusion process Methods 0.000 claims 12
- 150000004767 nitrides Chemical class 0.000 claims 10
- 239000000243 solution Substances 0.000 claims 10
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims 8
- 239000000126 substance Substances 0.000 claims 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 6
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 5
- 150000007524 organic acids Chemical class 0.000 claims 5
- 238000010790 dilution Methods 0.000 claims 4
- 239000012895 dilution Substances 0.000 claims 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 3
- 229910052786 argon Inorganic materials 0.000 claims 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims 3
- 239000001307 helium Substances 0.000 claims 3
- 229910052734 helium Inorganic materials 0.000 claims 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims 3
- 229910052710 silicon Inorganic materials 0.000 claims 3
- 239000010703 silicon Substances 0.000 claims 3
- 229910000881 Cu alloy Inorganic materials 0.000 claims 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 2
- 229920000620 organic polymer Polymers 0.000 claims 2
- 229910000077 silane Inorganic materials 0.000 claims 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 2
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims 1
- 238000001035 drying Methods 0.000 claims 1
- 239000007800 oxidant agent Substances 0.000 claims 1
- 230000033116 oxidation-reduction process Effects 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 claims 1
- -1 siloxane silicon oxide Chemical class 0.000 claims 1
- 239000006061 abrasive grain Substances 0.000 description 3
- 238000009832 plasma treatment Methods 0.000 description 3
- 229910001069 Ti alloy Inorganic materials 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- IUYOGGFTLHZHEG-UHFFFAOYSA-N copper titanium Chemical compound [Ti].[Cu] IUYOGGFTLHZHEG-UHFFFAOYSA-N 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Priority Applications (14)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22687699A JP4554011B2 (ja) | 1999-08-10 | 1999-08-10 | 半導体集積回路装置の製造方法 |
| TW089114753A TW521373B (en) | 1999-08-10 | 2000-07-24 | Semiconductor integrated circuit device and manufacturing method of semiconductor integrated circuit device |
| KR1020000046084A KR100746543B1 (ko) | 1999-08-10 | 2000-08-09 | 반도체 집적 회로 장치의 제조 방법 |
| US10/128,265 US6849535B2 (en) | 1999-08-10 | 2002-04-24 | Semiconductor integrated circuit device and manufacturing method of semiconductor integrated circuit device |
| US10/128,264 US20020119651A1 (en) | 1999-08-10 | 2002-04-24 | Semiconductor integrated circuit device and manufacturing method of semiconductor integrated circuit device |
| US10/140,110 US20020127842A1 (en) | 1999-08-10 | 2002-05-08 | Semiconductor integrated circuit device and manufacturing method of semiconductor integrated circuit device |
| US10/140,112 US6815330B2 (en) | 1999-08-10 | 2002-05-08 | Semiconductor integrated circuit device and manufacturing method of semiconductor integrated circuit device |
| US10/140,111 US20020142576A1 (en) | 1999-08-10 | 2002-05-08 | Semiconductor integrated circuit device and manufacturing method of semiconductor integrated circuit device |
| US10/233,469 US6797606B2 (en) | 1999-08-10 | 2002-09-04 | Semiconductor integrated circuit device and manufacturing method of semiconductor integrated circuit device |
| US10/233,421 US6756679B2 (en) | 1999-08-10 | 2002-09-04 | Semiconductor integrated circuit device and manufacturing method of semiconductor integrated circuit device |
| US10/233,432 US6797609B2 (en) | 1999-08-10 | 2002-09-04 | Semiconductor integrated circuit device and manufacturing method of semiconductor integrated circuit device |
| US10/233,475 US6864169B2 (en) | 1999-08-10 | 2002-09-04 | Semiconductor integrated circuit device and manufacturing method of semiconductor integrated circuit device |
| US10/233,430 US6716749B2 (en) | 1999-08-10 | 2002-09-04 | Semiconductor integrated circuit device and manufacturing method of semiconductor integrated circuit device |
| US12/018,790 US20080138979A1 (en) | 1999-08-10 | 2008-01-23 | Semiconductor integrated circuit device and manufacturing method of semiconductor integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22687699A JP4554011B2 (ja) | 1999-08-10 | 1999-08-10 | 半導体集積回路装置の製造方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006280936A Division JP2007005840A (ja) | 2006-10-16 | 2006-10-16 | 半導体集積回路装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001053076A JP2001053076A (ja) | 2001-02-23 |
| JP2001053076A5 true JP2001053076A5 (enExample) | 2004-11-11 |
| JP4554011B2 JP4554011B2 (ja) | 2010-09-29 |
Family
ID=16851969
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22687699A Expired - Lifetime JP4554011B2 (ja) | 1999-08-10 | 1999-08-10 | 半導体集積回路装置の製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (11) | US20020119651A1 (enExample) |
| JP (1) | JP4554011B2 (enExample) |
| KR (1) | KR100746543B1 (enExample) |
| TW (1) | TW521373B (enExample) |
Families Citing this family (103)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| JP3805588B2 (ja) * | 1999-12-27 | 2006-08-02 | 株式会社日立製作所 | 半導体装置の製造方法 |
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| WO2001082367A1 (fr) * | 2000-04-20 | 2001-11-01 | Hitachi, Ltd. | Circuit integre et procede de fabrication |
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