KR100746543B1 - 반도체 집적 회로 장치의 제조 방법 - Google Patents

반도체 집적 회로 장치의 제조 방법 Download PDF

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KR100746543B1
KR100746543B1 KR1020000046084A KR20000046084A KR100746543B1 KR 100746543 B1 KR100746543 B1 KR 100746543B1 KR 1020000046084 A KR1020000046084 A KR 1020000046084A KR 20000046084 A KR20000046084 A KR 20000046084A KR 100746543 B1 KR100746543 B1 KR 100746543B1
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South Korea
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film
insulating film
groove
silicon oxide
forming
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Korean (ko)
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KR20010030070A (ko
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준지 노구찌
나오후미 오하시
겐이찌 다께다
다쯔유끼 사이또
히즈루 야마구찌
노부오 오와다
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가부시키가이샤 히타치세이사쿠쇼
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Publication of KR20010030070A publication Critical patent/KR20010030070A/ko
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
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    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
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    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
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    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
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    • H01L23/53204—Conductive materials
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  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Manufacturing & Machinery (AREA)
  • Plasma & Fusion (AREA)
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  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020000046084A 1999-08-10 2000-08-09 반도체 집적 회로 장치의 제조 방법 Expired - Lifetime KR100746543B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP22687699A JP4554011B2 (ja) 1999-08-10 1999-08-10 半導体集積回路装置の製造方法
JP1999-226876 1999-08-10

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KR1020070005834A Division KR100746895B1 (ko) 1999-08-10 2007-01-18 반도체 집적 회로 장치의 제조 방법

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KR20010030070A KR20010030070A (ko) 2001-04-16
KR100746543B1 true KR100746543B1 (ko) 2007-08-06

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US (11) US20020119651A1 (enExample)
JP (1) JP4554011B2 (enExample)
KR (1) KR100746543B1 (enExample)
TW (1) TW521373B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8334204B2 (en) 2008-07-24 2012-12-18 Tokyo Electron Limited Semiconductor device and manufacturing method therefor

Families Citing this family (102)

* Cited by examiner, † Cited by third party
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US20030001277A1 (en) 2003-01-02
US20030045086A1 (en) 2003-03-06
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US20030017692A1 (en) 2003-01-23
US20020113271A1 (en) 2002-08-22
US6797606B2 (en) 2004-09-28
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US6797609B2 (en) 2004-09-28
US6864169B2 (en) 2005-03-08
US6849535B2 (en) 2005-02-01
US6716749B2 (en) 2004-04-06
US6815330B2 (en) 2004-11-09
US20020127842A1 (en) 2002-09-12
US20020142576A1 (en) 2002-10-03
TW521373B (en) 2003-02-21
JP2001053076A (ja) 2001-02-23
US20020127843A1 (en) 2002-09-12
US20030001183A1 (en) 2003-01-02
US20030001280A1 (en) 2003-01-02
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