JP4548280B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP4548280B2 JP4548280B2 JP2005250614A JP2005250614A JP4548280B2 JP 4548280 B2 JP4548280 B2 JP 4548280B2 JP 2005250614 A JP2005250614 A JP 2005250614A JP 2005250614 A JP2005250614 A JP 2005250614A JP 4548280 B2 JP4548280 B2 JP 4548280B2
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- plasma treatment
- conductive layer
- insulating film
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- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 239000004065 semiconductor Substances 0.000 title claims description 17
- 239000007789 gas Substances 0.000 claims description 52
- 239000001257 hydrogen Substances 0.000 claims description 52
- 229910052739 hydrogen Inorganic materials 0.000 claims description 52
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 50
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 49
- 238000009832 plasma treatment Methods 0.000 claims description 49
- 230000001603 reducing effect Effects 0.000 claims description 38
- 238000000137 annealing Methods 0.000 claims description 37
- 238000000034 method Methods 0.000 claims description 29
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 27
- 229910021529 ammonia Inorganic materials 0.000 claims description 24
- 230000009467 reduction Effects 0.000 claims description 24
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 16
- 229910052802 copper Inorganic materials 0.000 claims description 16
- 239000010949 copper Substances 0.000 claims description 16
- 229910052757 nitrogen Inorganic materials 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 230000003064 anti-oxidating effect Effects 0.000 claims description 3
- 239000011229 interlayer Substances 0.000 description 42
- 239000010410 layer Substances 0.000 description 41
- 230000008569 process Effects 0.000 description 20
- 238000011946 reduction process Methods 0.000 description 14
- 238000012545 processing Methods 0.000 description 13
- 230000008901 benefit Effects 0.000 description 10
- 230000008859 change Effects 0.000 description 8
- 239000004020 conductor Substances 0.000 description 8
- 239000000126 substance Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 150000002431 hydrogen Chemical class 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 239000003963 antioxidant agent Substances 0.000 description 2
- 230000003078 antioxidant effect Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- -1 for example Chemical compound 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 238000012993 chemical processing Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002893 slag Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76825—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc.
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76826—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by contacting the layer with gases, liquids or plasmas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76828—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. thermal treatment
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Drying Of Semiconductors (AREA)
Description
Claims (1)
- 基板に形成された低誘電率絶縁膜に、表面が露出する様に銅を含む導電層を形成する工程と、
前記導電層表面に対して水素アニールを行う工程と、
前記導電層表面に対してアンモニアと窒素との混合ガスを用いた還元性ガスを含むプラズマ処理を行うことによって前記導電層表面に対して還元処理を行うとともに前記水素アニールにより吸着された水素を脱離させる工程と、
前記プラズマ処理後の前記導電層表面が酸素を含む雰囲気にさらされることなく前記導電層表面を被覆する酸化防止膜を形成する工程と、を備え、
前記水素アニールと前記プラズマ処理とは、酸素を含む雰囲気に前記基板をさらすことなく連続して行い、
前記プラズマ処理においては、前記アンモニアと前記窒素との流量比率を1:4の条件で総流量2600cm 3 /minとした混合ガスを用い、
しかも、プラズマ処理時間を5秒〜15秒とするとともに、13.56MHzの高周波出力150W〜300Wにて印加する半導体装置の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005250614A JP4548280B2 (ja) | 2005-08-31 | 2005-08-31 | 半導体装置の製造方法 |
TW095128499A TW200746287A (en) | 2005-08-31 | 2006-08-03 | Method for production of semiconductor devices |
US11/465,502 US7670941B2 (en) | 2005-08-31 | 2006-08-18 | Method for production of semiconductor devices |
CNB2006101216899A CN100490118C (zh) | 2005-08-31 | 2006-08-28 | 半导体器件的制造方法 |
KR1020060082726A KR20070026128A (ko) | 2005-08-31 | 2006-08-30 | 반도체 장치의 제조 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005250614A JP4548280B2 (ja) | 2005-08-31 | 2005-08-31 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007067132A JP2007067132A (ja) | 2007-03-15 |
JP4548280B2 true JP4548280B2 (ja) | 2010-09-22 |
Family
ID=37804817
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005250614A Expired - Fee Related JP4548280B2 (ja) | 2005-08-31 | 2005-08-31 | 半導体装置の製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7670941B2 (ja) |
JP (1) | JP4548280B2 (ja) |
KR (1) | KR20070026128A (ja) |
CN (1) | CN100490118C (ja) |
TW (1) | TW200746287A (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7790540B2 (en) * | 2006-08-25 | 2010-09-07 | International Business Machines Corporation | Structure and method to use low k stress liner to reduce parasitic capacitance |
US8334204B2 (en) | 2008-07-24 | 2012-12-18 | Tokyo Electron Limited | Semiconductor device and manufacturing method therefor |
CN102326229B (zh) * | 2009-03-05 | 2014-03-12 | 应用材料公司 | 沉积具有低界面污染的层的方法 |
JP5238615B2 (ja) | 2009-06-04 | 2013-07-17 | 株式会社東芝 | 半導体装置の製造方法 |
US8758638B2 (en) * | 2011-05-10 | 2014-06-24 | Applied Materials, Inc. | Copper oxide removal techniques |
US20150375275A1 (en) * | 2013-03-14 | 2015-12-31 | Applied Materials, Inc. | Uv-assisted removal of metal oxides in an ammonia-containing atmosphere |
JP6405196B2 (ja) | 2013-12-18 | 2018-10-17 | キヤノン株式会社 | 半導体装置の製造方法 |
KR102146705B1 (ko) * | 2013-12-23 | 2020-08-21 | 삼성전자주식회사 | 반도체 소자의 배선 구조물 및 그 형성 방법 |
WO2017199767A1 (ja) * | 2016-05-16 | 2017-11-23 | 株式会社アルバック | Cu膜の形成方法 |
CN115241322A (zh) * | 2022-06-22 | 2022-10-25 | 通威太阳能(安徽)有限公司 | 电极的去氧化方法、电池的制备方法、电池和电子产品 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000269209A (ja) * | 1999-03-15 | 2000-09-29 | Toshiba Corp | 半導体装置の製造方法 |
JP2002110679A (ja) * | 2000-09-29 | 2002-04-12 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
JP2003188254A (ja) * | 2001-12-18 | 2003-07-04 | Hitachi Ltd | 半導体装置の製造方法および半導体装置 |
JP2005050859A (ja) * | 2003-07-29 | 2005-02-24 | Renesas Technology Corp | 半導体装置の製造方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11312680A (ja) * | 1998-04-30 | 1999-11-09 | Nec Corp | 配線の形成方法 |
JP3892621B2 (ja) * | 1999-04-19 | 2007-03-14 | 株式会社神戸製鋼所 | 配線膜の形成方法 |
JP4554011B2 (ja) * | 1999-08-10 | 2010-09-29 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置の製造方法 |
US6376370B1 (en) * | 2000-01-18 | 2002-04-23 | Micron Technology, Inc. | Process for providing seed layers for using aluminum, copper, gold and silver metallurgy process for providing seed layers for using aluminum, copper, gold and silver metallurgy |
JP2001319928A (ja) * | 2000-05-08 | 2001-11-16 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
KR100404941B1 (ko) * | 2000-06-20 | 2003-11-07 | 주식회사 하이닉스반도체 | 반도체 소자의 금속 배선 형성방법 |
KR100407682B1 (ko) * | 2000-06-26 | 2003-12-01 | 주식회사 하이닉스반도체 | 반도체 소자의 금속배선 형성방법 |
JP2003332426A (ja) * | 2002-05-17 | 2003-11-21 | Renesas Technology Corp | 半導体装置の製造方法および半導体装置 |
US6846756B2 (en) * | 2002-07-30 | 2005-01-25 | Taiwan Semiconductor Manufacturing Co., Ltd | Method for preventing low-k dielectric layer cracking in multi-layered dual damascene metallization layers |
KR100482180B1 (ko) * | 2002-12-16 | 2005-04-14 | 동부아남반도체 주식회사 | 반도체 소자 제조방법 |
US7229911B2 (en) * | 2004-04-19 | 2007-06-12 | Applied Materials, Inc. | Adhesion improvement for low k dielectrics to conductive materials |
-
2005
- 2005-08-31 JP JP2005250614A patent/JP4548280B2/ja not_active Expired - Fee Related
-
2006
- 2006-08-03 TW TW095128499A patent/TW200746287A/zh unknown
- 2006-08-18 US US11/465,502 patent/US7670941B2/en not_active Expired - Fee Related
- 2006-08-28 CN CNB2006101216899A patent/CN100490118C/zh not_active Expired - Fee Related
- 2006-08-30 KR KR1020060082726A patent/KR20070026128A/ko not_active Application Discontinuation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000269209A (ja) * | 1999-03-15 | 2000-09-29 | Toshiba Corp | 半導体装置の製造方法 |
JP2002110679A (ja) * | 2000-09-29 | 2002-04-12 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
JP2003188254A (ja) * | 2001-12-18 | 2003-07-04 | Hitachi Ltd | 半導体装置の製造方法および半導体装置 |
JP2005050859A (ja) * | 2003-07-29 | 2005-02-24 | Renesas Technology Corp | 半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN100490118C (zh) | 2009-05-20 |
US20070048995A1 (en) | 2007-03-01 |
TW200746287A (en) | 2007-12-16 |
JP2007067132A (ja) | 2007-03-15 |
US7670941B2 (en) | 2010-03-02 |
KR20070026128A (ko) | 2007-03-08 |
CN1925133A (zh) | 2007-03-07 |
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