CN1881618A - 便携式信息终端 - Google Patents
便携式信息终端 Download PDFInfo
- Publication number
- CN1881618A CN1881618A CNA2006100996501A CN200610099650A CN1881618A CN 1881618 A CN1881618 A CN 1881618A CN A2006100996501 A CNA2006100996501 A CN A2006100996501A CN 200610099650 A CN200610099650 A CN 200610099650A CN 1881618 A CN1881618 A CN 1881618A
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- Prior art keywords
- film
- thin
- display device
- semiconductor
- matrix display
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 58
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 9
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract description 53
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- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 1
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
- H01L21/3226—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering of silicon on insulator
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1277—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using a crystallisation promoting species, e.g. local introduction of Ni catalyst
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Abstract
一种便携式信息终端,该信息终端包括一个半导体装置,所述半导体装置具有多个N沟道和P沟道薄膜晶体管,所述薄膜晶体管包括:在一个基板的绝缘表面上形成的结晶性硅膜作为有源层,所述有源层具有至少一个沟道区和源、漏区,并包括一种卤族元素;其中所述结晶性硅膜包括结晶性硅晶粒,每个结晶性硅晶粒的晶体结构在预定方向上延伸,并且晶界在所述预定预定方向上扩展;其中所述预定方向与所述薄膜晶体管的沟道区中的载流子移动方向成一预定角度,且其中所述薄膜晶体管的S值小于等于100mV/dec。
Description
本申请是申请号为200510083584.4的中国专利申请的分案申请。
技术领域
本说明书公开的发明涉及具有结晶性的薄膜半导体。还涉及薄膜半导体的制造方法。还涉及利用该薄膜半导体的半导体装置。还涉及该半导体装置的制造方法。
背景技术
已知在玻璃基板、石英基板上形成具有结晶性的硅膜并用该硅膜制造薄膜晶体管(以下称之为TFT)的技术。
将该薄膜晶体管称之为高温多晶硅TFT、低温多晶硅TFT。
高温多晶硅TFT是利用800℃、900℃以上的比较高的温度的加热处理作为结晶性硅膜的制造方法的技术。该技术可以说是利用单晶硅晶片的IC的制造工艺的派生技术。
当然,作为制造高温多晶硅TFT的基板,要利用能耐受上述加热温度的石英基板。
另一方面,低温多晶硅TFT利用廉价的玻璃基板(当然其耐热性相对于石英基板是较差的)作为基板。
在构成低温多晶硅TFT的结晶性硅膜的制造方面,利用玻璃基板能耐受的600℃以下的加热或相对于玻璃基板来说几乎没有热损伤的激光退火技术。
高温多晶硅TFT具有能在基板上集成特性一致的TFT的特征。
另一方面,低温多晶硅TFT具有能利用廉价且容易大面积化的玻璃基板作为基板的特征。
还有,在目前的技术中,高温多晶硅TFT也好,低温多晶硅TFT也好,其特性没有大的差别。
即,在两者中都可得到迁移率约为50~100(cm2/Vs),S值约为200~400(mV/dec)(VD=1V)的特性。
该特性与利用单晶硅晶片的MOS型晶体管的特性比较大为逊色。一般来说,利用单晶硅晶片的MOS型晶体管的S值约为60~70(mV/dec)。
在目前情况下,为了在同一基板上将有源矩阵型液晶显示装置的有源矩阵电路和周边驱动电路进行集成而利用TFT。即,在同一基板上用TFT来制成有源矩阵电路和周边驱动电路。
在这种构成中,要求周边电路的源驱动器进行十几MHz以上的工作。但目前的用高温单晶硅TFT和低温多晶硅TFT构成的电路的工作速度的界限只达到几MHz。
因而,目前的解决办法是将工作进行分割(称之为分割驱动)来构成液晶显示。但是,该方法存在由于分割的定时的微妙的偏移等原因而在画面上出现条状花纹等问题。
此外,正在考虑除了周边驱动电路以外,再将振荡电路、D/A转换器、A/D转换器、还有进行各种图象处理的数字电路集成于同一基板上。
但是,上述振荡电路、D/A转换器、A/D转换器、还有进行各种图象处理的数字电路需要在比周边驱动电路更高的频率下工作。
因而,用由目前的技术得到的高温多晶硅TFT、低温多晶硅TFT来构成这些电路是困难的。
还有,能进行100MHz以上的工作的由利用单晶硅晶片的MOS晶体管构成的集成电路已达到实用化。
发明内容
在本说明书中公开的发明的一个目的是得到能构成上述那种高速工作(一般来说是几十MHz以上的工作速度)所要求的电路的薄膜晶体管。
此外,本发明的另一个目的是提供能得到与利用单晶硅晶片制造的MOS晶体管比美的那种特性的薄膜晶体管。另一个目的是提供该薄膜晶体管的制造方法。再一个目的是用具有那种良好特性的薄膜晶体管提供具有必要的功能的半导体装置。
在本说明书中公开的发明之一的特征在于:这是一种利用了将在具有绝缘表面的基板上形成的结晶性硅膜作为有源层的薄膜晶体管的半导体装置;
该结晶性硅膜在预定的方向上具有带有连续性的结晶结构,并在上述预定的方向上具有延伸的结晶粒界;
在上述薄膜晶体管中,将联结源区和漏区的方向与上述预定方向形成为具有一个预定角度。
具有上述那种结晶状态的结晶性硅膜的例子在图6和图7中示出。在图7中示出的是将图6的一部分进一步放大了的图。图6和图7中所示是用透射电子显微镜(TEM)观察厚度为250埃的结晶性硅膜的表面的照片。
为了得到图6和图7示出的那种硅膜,通过采用实施例1中示出的那种制造工序来实现。
在图6和图7中,示出从图的左下朝向右上具有连续性的结晶结构延伸的状态。此外也示出在该结晶结构的连续性延伸的方向上大体平行地形成多个结晶粒界的状态。
从图7示出的结晶结构可清楚看出,该结晶性硅膜是用多个具有在特定的方向上延伸的结晶结构的结晶体的集合来构成的。该结晶体的宽度约为500埃~2000埃,或从约等于结晶性硅膜的膜厚~2000埃。
即,在相对于结晶结构的连续性存在的方向成直角或大体直角的方向上,存在多个以一定间隔分开的清晰的结晶粒界,该方向成为结晶结构不连续的方向。即,在该方向上结晶结构的连续性受到损害。
在该结晶结构的连续性延伸的方向上大体上保持晶格结构的连续性,与其他方向比较,在载流子移动时的散射和陷阱等非常少。即,对于载流子来说,可看作是上述结晶结构连续的方向成为不受到或难以受到来自结晶粒界的散射的实质上的单晶状态。
上述发明的构成规定了该结晶结构的连续方向与联结薄膜晶体管的源区和漏区的方向的关系。如要达到高速工作的目标,则使上述的结晶结构的连续方向与联结源区和漏区的方向一致或大体一致是较为理想的。通过这样做,在MOS型的薄膜晶体管的工作中,可做成载流子最容易移动的结构。
此外,通过将上述两个方向的夹角设定为预定的角度,可控制所得到的薄膜晶体管的特性。例如,在同一基板上制造多个薄膜晶体管群时,通过形成多个使上述两个角度的夹角不同的晶体管群,可使该晶体管群的特性不同。
此外,在具有N字型、コ字型、再有M字型等形状的有源层弯曲的那种薄膜晶体管的情况下,可如下述那样来做。即,在联结源区和漏区的线不是直线而是曲线的那种薄膜晶体管情况下,可如下述那样来做。此时,将上述的结晶结构的连续性的方向设定为与沟道区中的载流子的移动方向(对于作为整体来观察时的载流子的移动方向)一致。
在该情况下也可预期在载流子的移动方向与结晶结构的连续性的方向的夹角做成0度时能得到最高速的工作。
本发明的另一种构成的特征在于:这是一种利用了将在具有绝缘表面的基板上形成的结晶性硅膜作为有源层的薄膜晶体管的半导体装置;
该结晶性硅膜在结晶粒界的延伸方向上具有各向异性;
在上述薄膜晶体管中,将联结源区和漏区的方向与上述延伸方向形成为具有一个预定角度。
本发明的另一种构成的特征在于:这是一种利用了将在具有绝缘表面的基板上形成的结晶性硅膜作为有源层的薄膜晶体管的半导体装置;
该结晶性硅膜在结晶粒界的延伸方向上具有各向异性;
在上述薄膜晶体管中,将沟道区中载流子的移动方向与上述延伸方向形成为具有一个预定角度。
在本说明书中公开的发明的结晶性硅膜中,有必要对非晶硅膜导入以镍为代表的有助于硅的结晶化的金属元素,再进行加热处理,和在含有卤素的气氛中的加热处理。
作为上述金属元素,在重复性和效果等方面来看,镍是极为理想的。一般来说,作为这种金属元素,可利用从Fe、Co、Ni、Ru、Rh、Pd、Os、Ir、Pt、Cu、Au等选出的一种或多种金属。
在利用镍元素时,在硅膜中最终残留的镍的浓度约为1×1014原子/cm3~5×1018原子/cm3。如缩短热氧化膜的吸杂条件,该浓度的上限可降低到约5×1017原子/cm3。可利用SIMS(2次离子分析法)来进行该浓度的监测。
一般来说,上述镍浓度的下限为1×1016原子/cm3。这是因为在考虑与成本的兼顾时,要排除附着于基板、装置上的镍元素的影响通常是困难的。
因而,在按照一般的制造工序的情况下,残留的镍元素的浓度为1×1016原子/cm3~5×1017原子/cm3。
此外,在热氧化膜的制造工序中,由于该金属元素在热氧化膜中移动的原因,在所得到的结晶性硅膜的厚度方向上的镍元素的浓度分布中产生梯度或分布。
一般来说,可观察到,结晶性硅膜中的该金属元素的浓度在朝向形成热氧化膜的界面时该金属元素的浓度有变高的趋势。此外,也观察到,在某些条件下,在朝向基板或基底时,即,朝向背面一侧的界面时,该金属元素的浓度有变高的趋势。
此外,在热氧化膜的形成时气氛中含有卤族元素的情况下,该卤族元素也显示出与上述金属元素同样的浓度分布。即,显示出在朝向结晶性硅膜的表面和/或背面时含有浓度变高的浓度分布。本说明书中公开的发明的结晶性硅膜的膜厚做成100埃~450埃较为理想,做成150埃~450埃更为理想。通过做成这样的膜厚,就能以更清晰的形状,并以良好的重复性得到图6、图7所示出的那种在一个方向上结晶性连续的独特的结晶结构。
该最终的结晶性硅膜的膜厚,要考虑因热氧化膜的形成而引起的膜厚的减少来决定。
本发明的另一种构成的特征是具有:
在具有绝缘表面的基板上形成非晶硅膜的工序;
在上述非晶硅膜上局部地有选择地导入有助于硅的结晶化的金属元素的工序;
进行加热处理,在与基板平行的方向上从有选择地导入了金属元素的区域朝向其他区域进行结晶生长的工序;
通过在含有卤族元素的氧化性气氛中用电热炉进行800℃~1100℃下的30分钟以上的加热处理来形成热氧化膜的工序;
除去上述热氧化膜的工序;以及:
使联结源区与漏区的方向与进行上述结晶生长的方向一致或大体一致的工序。
通过采用上述那种工序,可得到本说明书中公开的结晶性硅膜,还可得到利用该结晶结构的独特性的MOS型薄膜晶体管。
作为金属元素的导入方法,可举出涂敷含有该金属元素的溶液的方法,用CVD法的方法,用溅射法和蒸发法等的方法,利用含有该金属的电极进行等离子处理的方法。气体吸附法的方法等。
作为导入卤族元素的方法,可利用使氧化性气氛中(例如氧气氛)含有HCl、HF、HBr、Cl2、F2、Br2、CF4等的方法。
此外,在热氧化膜形成时的气氛中同时进行氢气的导入,利用湿法氧化的作用也是有效的。
用于热氧化膜的形成的温度是极为重要的。如要得到用下述的那种单个元件可进行几十MHz以上的工作、S值在100(mV/dec)以下的TFT的话,有必要使热氧化膜的形成时的加热温度为800℃以上或900℃以上,前者较为理想,后者更为理想。
退火温度比该温度低的话,吸杂效果显著降低。而且,下限由被吸杂的物质的卤化物的蒸气压与退火时气氛的压力决定。即,卤化物的蒸气压比退火气氛的压力低时,吸杂效果变小。例如,在大气压(760mmHg)下进行退火时,氯化镍的蒸气压在541度下是38.9mmHg,与此相对,在994度下蒸气压是820.6mmHg,因此在高温下吸杂效果显著提高。
还有,把该加热温度的上限为定为本身即是石英基板的耐热温度的上限的约1100℃是适当的。
本发明的另一种构成的特征是具有:
在具有绝缘表面的基板上形成非晶硅膜的工序;
在上述非晶硅膜上局部地有选择地导入有助于硅的结晶化的金属元素的工序;
进行加热处理,在与基板平行的方向上从有选择地导入金属元素的区域朝向其他区域进行结晶生长的工序;
通过在含有卤族元素的氧化性气氛中用电热炉进行800℃~1100℃下的30分钟以上的加热处理来形成热氧化膜的工序;
除去上述热氧化膜的工序;以及:
使沟道区中的载流子的移动方向与进行上述结晶生长的方向一致或大体一致的工序。
上述构成着眼于沟道区的载流子的移动方向,规定了该方向与结晶生长方向(结晶结构中具有连续性的方向或结晶粒界延伸的方向)之间的关系。
该构成在联结源区与漏区的线部分是弯曲的情况下是有效的。
附图说明
图1是示出薄膜晶体管的制造工序的图。
图2是示出薄膜晶体管的制造工序的图。
图3是示出薄膜晶体管的制造工序的图。
图4是示出薄膜晶体管的制造工序的图。
图5是示出薄膜晶体管的制造工序的图。
图6是拍摄硅薄膜的电子显微镜照片。
图7是电子显微镜拍摄的硅薄膜的照片。
图8是利用了TFT的各种半导体装置的概要图。
图9是结晶生长的状态的模式图。
具体实施方式
在通过对非晶硅膜进行加热使之结晶化从而得到结晶化硅膜的技术中,通过在使非晶硅膜的表面的一部分区域保持与镍元素相接的状态下进行加热处理,进行从上述一部分区域向其他区域和向与基板平行的方向的结晶生长。
而且,在进行上述结晶生长的硅膜表面上形成热氧化膜。该热氧化膜是通过在含有卤族元素的氧化性气氛中用电热炉进行800℃~1100℃下的30分钟以上的加热处理来形成的。
然后除去该热氧化膜。在这样得到的结晶性硅膜中,结晶粒界在图6和图7中示出的那种特定的方向上延伸,在该方向上具有结晶结构连续的结构。
而且通过制造使结晶生长连续的方向与工作时载流子的移动方向一致的TFT,可得到具有良好性能的TFT。
〖实施例1〗
本实施例涉及对于非晶硅膜通过有选择地导入有助于硅的结晶化的金属元素,进行称之为横向生长的、朝向与基板平行的方向的结晶生长。
图1中示出本实施例的制造工序。首先,在石英基板201上形成厚度为3000埃的氧化硅膜作为基底膜202。还有,如石英基板的表面平滑性良好并且清洗得很干净的话,该基底膜202不是特别必要。
还有,在目前情况下利用石英基板作为基板成为较理想的选择,但如果是能耐受加热处理温度的基板,则不限定于石英。
其次,用减CVD法形成厚度为600埃的作为结晶性硅膜的起始膜的非晶硅膜203。将该非晶硅膜的厚度做成2000埃以下是较为理想的。
其次,形成图中未示出的厚度为1500埃的氧化硅膜,通过对其刻蚀图形形成用204示出的掩模。该掩模在用205示出的区域中形成开口。在形成该开205的区域中露出非晶硅膜203。
开205具有长边在图面的深度和眼前方向上的细长的长方形形状。该开205的宽度做成在20微米以上是适当的。并且可以必要的长度来形成该长边的长度。
然后涂敷含有以换算成重量为10ppm的镍元素的醋酸镍溶液。然后用图中未示出的旋转器进行旋转干燥以除去多余的溶液。
由此得到镍元素在图1(A)的点线206示出的状态下存在的状态。在该状态下得到镍元素在开205的底部保持与非晶硅膜的一部分有选择地相接的状态。
其次在含有3%的氢的、尽可能不含有氧的氮气氛中进行640℃、4小时的加热处理。于是就进行用图1(B)的207示出的朝向与基板201平行的方向的结晶生长。在图9中示出从上面观察该结晶生长的状态的模式图。
该结晶生长是从已导入镍元素的开205的区域向周围进行的。将朝向与该基板平行的方向的生长称为横向生长或lateral生长。
用该结晶生长得到的横向生长的结晶性硅膜的表面,与以往的低温多晶硅、高温多晶硅比较,可得到平滑性非常好的表面。这是因为结晶粒界的延伸方向大体一致的缘故。
一般称之为多晶硅或polysilicon的硅膜,其表面的凹凸有±100埃以上。但是在本实施例中示出的横向生长的情况下,观察到其表面的凹凸在±30埃以下。该凹凸使得与栅绝缘膜之间的界面特性变坏,故尽可能减小该凹凸是较为理想的。
在上述的用于结晶化的加热处理条件中,可进行100微米以上的横向生长。故得到具有以这种方式横向生长的区域的硅膜208。
可在450℃~1100℃(上限由基板的耐热性来限定)下进行用于这种结晶生长的加热处理。如要确保某种程度的横向生长距离,则加热处理的温度在600℃以上是较为理想的。但是,由将温度提高到该温度以上引起的结晶生长距离或结晶性的提高并不是那么大。
然后除去用于有选择地导入镍元素的氧化硅膜构成的掩模204。这样就得到图1(C)示出的状态。
在该状态中,镍元素在膜中分布不均匀。特别是在形成了开口205的区域和用207示出的结晶生长的前端部分,镍元素以较高的浓度存在。因而,在有源层的形成中,避开那些区域是重要的。即,在有源层中不存在上述镍元素超常的区域是重要的。
在得到图1(C)的状态后,可进行激光的照射。即,提高激光的照射,可进一步有助于结晶化。该激光的照射使膜中存在的镍元素的结块分散开,具有在其后容易除去镍元素的效果。还有,在该阶段中即使进行激光的照射,也不会再进行横向生长。
作为激光,可利用具有紫外区域的波长的受激准分子激光。例如,可利用KrF受激准分子激光(波长248nm)、XeCl受激准分子激光(波长308nm)。
其次在还有3%(体积)的氧气氛中用电热炉进行950℃的加热处理30分钟以上,形成200埃厚度的热氧化膜209。随着热氧化膜的形成,硅膜208的膜厚减少约100埃。即,硅膜的膜厚为500埃。
在该工序中,随着热氧化膜的形成,膜中的具有不稳定的结合状态的硅元素在热氧化膜的形成中被利用。这样,膜中的缺陷减少,可得到更好的结晶性。
而且同时通过热氧化膜的形成和氯的作用从膜中进行镍元素的吸杂。
当然,在热氧化膜中,以较高的浓度引入镍元素。而相对来说硅膜208中的镍元素减少。
在热氧化膜209形成了之后,将该热氧化膜209除去。通过这样做来得到使镍元素的含有浓度减少的结晶性硅膜208。这样得到的结晶性硅膜具有如图6或图7所示的在一个方向上结晶结构延伸(该方向与结晶生长方向一致)的结构。即,多个细长的圆柱形结晶体通过多个在一个方向上延伸的结晶粒界具有平行排列的结构。
其次进行图形刻蚀,形成在横向生长区域构成的图形210。该岛状的区域210以后将成为TFT的有源层。
在这里,进行图形的位置选择,使得联结源区和漏区的方向与结晶生长的方向一致。通过这样做,可使载流子的移动方向与结晶晶格连续地延伸方向一致,结果可得到具有良好特性的TFT。
然后,在形成以210构成的图形后,形成厚度为300埃的热氧化膜211。所形成的热氧化膜的膜厚的总计比最终的结晶性硅膜的膜厚要厚。该热氧化膜通过在含有3%的HCl的氧气氛中用电热炉进行950℃、30分钟以上的加热处理来得到。
通过形成热氧化膜211,图形(成为有源层的图形)210的膜厚为350埃。
在该工序中也可得到与形成热氧化膜209时同样的效果。再者,该热氧化膜209成为TFT的栅氧化膜的一部分。
其后,用等离子CVD法形成与热氧化膜一起构成栅绝缘膜的、厚度为1000埃的氧化硅膜304。(图2(A))
其次,用溅射法形成厚度为4000埃的用于形成栅电极的铝膜。使该铝膜中含有0.2%(重量)的钪。
使该铝膜中含有钪是为了在以后的工序中抑制突起(hillock)、金属源等的产生。所谓突起、金属源等是因加热时的铝的异常生长而引起的针状或刺状的突出部分。
形成了铝膜后,形成图中未示出的致密的阳极氧化膜。该阳极氧化膜是以含有3%的酒石酸的乙二醇溶液为电解溶液,以铝膜为阳极,以铂为阴极来进行的。在该工序中,在铝膜上形成厚度为100埃的、具有致密膜质的阴极氧化膜。
该图中未示出的阳极氧化膜具有提高与以后形成的光致抗蚀剂掩模的贴紧性的作用。
该阳极氧化膜的膜厚可通过阳极氧化时的外加电压来控制。
其次形成抗蚀剂掩模306。然后利用该抗蚀剂掩模对铝膜进行图形刻蚀使之形成用305示出的图形。这样就得到图2(B)示出的状态。
进行再一次的阳极氧化。在这里,以3%的草酸水溶液为电解溶液来使用。在该电解溶液中,通过进行以铝的图形305为阳极的阳极氧化,形成用308示出的多孔状的阳极氧化膜。
在该工序中,由于在上部存在贴紧性高的抗蚀剂掩模306,故在铝图形的侧面有选择地形成阳极氧化膜308。
可使该阳极氧化膜的膜厚生长到几微米。在这里,将该膜厚做成6000埃。再有,该生长距离可通过阳极氧化时间来控制。
然后除去抗蚀剂掩模306。其次进行再一次的致密的阳极氧化膜的形成。即,再次进行上述的以含有3%的酒石酸的乙二醇溶液为电解溶液的阳极氧化。
在该工序中,由于电解溶液进入多孔状的阳极氧化膜308中,故形成用309示出的具有致密的膜质的阳极氧化膜。
将该致密的阳极氧化膜309的膜厚做成1000埃。通过外加电压进行该膜厚的控制。
在这里,对露出的氧化硅膜304进行刻蚀。而且同时刻蚀热氧化膜300。该刻蚀利用干法刻蚀。然后,用混合了醋酸、硝酸和磷酸的混合酸除去多孔状的阳极氧化膜308。这样就得到图2(B)示出的状态。
在得到图2(D)的状态后,进行杂质离子的注入。在这里,为了制造N沟型的薄膜晶体管,用等离子掺杂法进行P(磷)离子的注入。
在该工序中,形成重掺杂的311和315的区域及轻掺杂的312和314的区域。这是因为残存的氧化硅膜310起到半透过的掩模的作用,注入的离子的一部分在该处受到遮蔽。
然后通过进行激光(或使用灯的强光)的照射,进行杂质离子注入区域的活性化。这样就以自对准方式形成源区311、沟道形成区313、漏区315、低浓度杂质区312和314。
在这里,用314示出的是称为LDD(轻掺杂漏)区的区域。(图2(D))
还有,在形成2000埃以上的那样厚的致密的阳极氧化膜309的膜厚时,可用该膜厚在沟道形成区313的外侧形成补偿(offset)栅区。
在本实施例中也形成补偿(offset)栅区,但由于其尺寸较小,故其存在引起的影响较小,而且由于图面变得复杂,故在图中未示出。
还有,在形成2000埃以上的那样厚的致密的阳极氧化膜309的膜厚时,由于需要200V以上的外加电压,故涉及重复性和安全性等,有必要加以注意。
其次,形成氧化硅膜、或氮化硅膜、或其叠层膜作为层间绝缘膜316。也可使用在氧化硅膜或氮化硅膜上用树脂材料构成的层作为层间绝缘膜。
然后进行接触孔的形成,进行源电极317和漏电极318的形成。这样就完成了图3(E)示出的薄膜晶体管。
本实施例中示出的TFT可得到在以往不能得到的极为良好的特性。
例如,在NTFT(N沟型的TFT)中,可得到迁移率为200~300(cm2/Vs),S值为75~90(mV/dec)(VD=1V)这样的高性能。在PTFT(P沟型的TFT)中,可得到迁移率为120~180(cm2/Vs),S值为75~100(mV/dec)(VD=1V)这样的高性能。
特别是S值,与以往的高温多晶硅TFT和低温多晶硅TFT的值比较,是1/2以下的令人惊异的良好的值。
〖实施例2〗
本实施例涉及在实施例1中示出的构成中对栅绝缘膜的形成方法加以改进的例子。
图3中示出本实施例的制造工序。首先按照图1(A)和(B)中示出的工序得到具有横向生长区域的结晶性硅膜208。还有,在这里将起始膜的非晶硅膜做成500埃。
在得到结晶性硅膜后,通过在含有3%的HCl的氧气氛中用电热炉进行950℃、30分钟以上的加热处理,形成厚度为200埃的热氧化膜209。(图3(A))
其次除去热氧化膜209。然后,通过进行图形刻蚀,形成以后将成为薄膜晶体管的有源层的图形210。(图3(B))
其次通过等离子CVD法,形成厚度为1000埃的栅绝缘膜304。(图3(C))
其次通过在含有3%的HCl的氧气氛中用电热炉进行950℃、30分钟以上的加热处理,形成厚度为300埃的热氧化膜211。(图3(D))
此时,热氧化膜在CVD氧化膜304的内侧生长,在图3(D)所示的状态下进行成膜。
所形成的热氧化膜的膜厚的总计比最终的结晶性硅膜的膜厚要厚。
在采用本实施例示出的制造工序时,栅绝缘膜用热氧化膜211和CVD氧化膜304的叠层膜来构成。
在采用本实施例示出的制造工序时,可使栅绝缘膜与有源层的界面处的界面态密度变低。
〖实施例3〗
本实施例示出有源矩阵型的液晶显示装置的有源矩阵电路部分的制造工序。
图4中示出本实施例的制造工序的概略。首先,按照图1和图2示出的工序得到图2(D)示出的状态。(图4(A)示出的状态)
其次用等离子CVD法形成厚度为2000埃的氮化硅膜401作为第一层间绝缘膜。再用旋转涂敷法形成聚酰亚胺膜402。这样,得到图4(B)中示出的状态。再有,除了聚酰亚胺以外可利用聚酰胺、聚酰亚胺酰胺(polyimideamide)作为树脂材料。
其次形成到达源区311和漏区315的接触孔,形成源电极403和漏电极403。这些电极用钛膜和铝膜和钛膜的叠层膜来形成。还有,源电极403作为从源线延伸的电极来形成。(图4(C))
漏电极403的一部分作为用于形成辅助电容的电极来形成。
在形成源和漏电极后,形成聚酰亚胺膜404作为第二层间绝缘膜。这样得到图4(C)示出的状态。
其次在树脂层间绝缘膜404中形成开口,在形成用钛膜和铝膜的叠层膜构成的黑色矩阵(BM)405。该黑色矩阵405除了原来的作为遮光膜的功能外,起到作为用于形成辅助电容的电极的功能。
形成黑色矩阵405后,形成聚酰亚胺树脂膜406作为第三层间绝缘膜。然后,形成通向漏电极403的接触孔,形成用ITO构成的象素电极407。
这样就能得到在起到辅助电容的功能的黑色矩阵405的图形与象素电极407的图形之间夹着聚酰亚胺树脂膜406的结构。
〖实施例4〗
本实施例是在实施例1示出的构成中对栅电极或由栅电极延伸的栅极布线的接触孔的形成方法进行改进的例子。
在实施例1(参照图2)或实施例3示出的构成中,成为用栅电极的侧面和上面具有致密的膜质的阳极氧化膜覆盖的状态。
这种结构在形成以铝为材料的电极时,对于抑制突起、抑制布线之间的短路具有很大的效果。
但是存在因其牢固的膜质的缘故接触孔的形成比较困难的问题。
本实施例涉及解决该问题的构成。图5示出本实施例的制造工序。
首先,如图5(A)所示,得到由结晶性硅膜构成的有源层图形210。然后,得到热氧化膜211与CVD氧化膜304叠层的状态。
在这里,采用首先形成CVD氧化膜,其后形成热氧化膜的工序。
得到图5(A)示出的状态后,形成铝膜,再形成厚度为500埃的氮化硅膜。然后,用光致抗蚀剂掩模306进行图形刻蚀,得到形成了305中示出的铝图形和其上的氮化硅膜501的状态。(图5(B))
在得到图5(B)示出的状态后,在配置了光致抗蚀剂掩模306的状态下形成多孔状的阳极氧化膜308,再形成具有致密的膜质的阳极氧化膜309。
这些阳极氧化膜只在构成栅电极的铝图形307的侧面有选择地形成。这是因为在铝图形的上面已存在氮化硅膜501的缘故。
阳极氧化膜的形成结束后,除去光致抗蚀剂掩模306。然后再除去露出的氧化硅膜304,再除去热氧化膜211的一部分。
这样就得到了图5(C)示出的状态。得到图5(C)的状态后,除去光致抗蚀剂掩模306,再除去多孔状的阳极氧化膜308。
然后,再除去氮化硅膜501。这样得到图5(D)示出的状态。在该状态下用等离子掺杂法进行赋予导电类型的杂质的掺杂。
其结果是以自对准的方式形成源区311、低浓度杂质区312和314、沟道区313、漏区315。
杂质的掺杂结束后,通过进行激光的照射,进行掺杂时产生的损伤的退火和所掺杂的杂质的活性化。
这样就得到图5(D)所示的状态。其次形成层间绝缘膜502。然后形成接触孔,形成源电极317、栅引出电极503、漏电极318,得到图5(E)示出的状态。
在该工序中,通向栅电极307的接触孔的形成由于在栅电极的上面不存在阳极氧化膜,故能比较容易地进行。
还有,在图中是以在相同的截面上形成源/漏电极和栅电极那种方式来记述的,但实际上栅引出电极在从栅电极307延伸部分处形成。
〖实施例5〗
本实施例是在实施例1示出的构成中利用玻璃基板作为基板的例子。
本实施例中利用变形点为667℃的康宁1737玻璃基板作为基板。而且将用于结晶化的加热处理在600℃、4小时的条件下进行。
将用于热氧化膜的形成的加热处理在含有3%的HCl的氧气氛中使用电热炉的640℃的条件下进行。此时,所形成的热氧化膜的膜厚在处理时间2小时的情况下为约30埃。此时,与加入实施例1中示出的那种950℃的加热处理时相比,其效果很小。
〖实施例6〗
本实施例是在实施例1示出的构成中热氧化膜形成时的气氛中不合有HCl的情况下的例子。此时,与气氛中含有HCl的情况相比,镍的吸杂效果较小。
〖实施例7〗
本实施例是在实施例1示出的构成中在热氧化膜的形成后进行激光的照射时的例子。这样做的话,可进一步有助于结晶化。
〖实施例8〗
本实施例是示出利用了TFT的半导体装置的例子。图8中示出各种半导体装置的例子。
图8(A)中示出的是称之为携带式信息终端的装置,在主机2001中具备的有源矩阵型的液晶显示装置2005中可将需要的信息从内部的存储装置调出并进行显示,或可利用电话线显示所访问的信息。
作为显示装置的一种形态,也可考虑利用有源矩阵型的EL显示装置。在构成显示装置的有源矩阵电路与同一基板上,各种信息处理电路、存储电路做成集成化电路2006并利用TFT进行集成化。
此外,在主机2001上设有摄像机部分2002,通过对操作开关2004进行操作,可摄入所需要的图象信息。用摄像机部分2002摄入的图象从图象接受部分2003摄入装置内。
图8(B)示出的是称之为头载显示器的显示装置。该装置将主机2101装于头部,借助于两个有源矩阵型液晶显示2102,具有在眼前几个厘米的部位处显示图象的功能。在该装置中能以虚拟现实的方式见到图象。
图8(C)示出的是车辆导航系统。该装置使用由天线2204接收的来自人造卫星的信号,具有监测位置的功能。而且在有源矩阵型的液晶显示装置上显示监测的位置。并且,显示信息的选择通过操作开关2203来进行。
再者,可利用有源矩阵型的EL显示装置来代替液晶显示装置。
图8(D)示出的是携带式电话的例子。该装置的主机2301中设有天线2306,并设有声音输入部分2303和声音输入部分2302。
在打电话时,通过操作操作开关2305来进行。并且,在显示装置上显示各种图象信息。作为携带型的显示装置,利用有源矩阵型的液晶显示装置或有源矩阵型的EL显示装置。
图8(E)示出的是携带型的电视摄像机。该装置具备将由图象接收部分2406摄入的图象存储于主机2401内放置的磁带的功能。
在集成化电路2407中对图象来进行各种数字处理。该集成化电路2407可由将以往利用的IC芯片组合起来的电路来构成,也可使用本说明书公开的那种TFT来构成。并且可用上述电路和TFT的组合来构成。
用图象接收部分2406接收的图象和内部的磁带中存储的图象,在有源矩阵型的液晶显示装置2402中进行显示。装置的操作通过操作开关2404来进行。另外,装置的电力通过电池2405来供给。
图8(F)示出的是投影型的显示装置。该装置具有将由主机2501投影的图象在屏幕上显示的功能。
在主机2501上设有:光源2502、将来自该光源的光进行光调制而形成图象的有源矩阵型的液晶显示装置2503、用于对图象进行投影的光学系统2504。
再有,作为液晶显示装置的形式,除了(B)中示出的装置之外,可利用透射型或反射型的形式的任一种。
将利用本说明书中公开的发明而得到的PTFT和NTFT组合起来构成9级环形振荡器时,可进行400MHz以上的振荡。
一般来说,如考虑用环形振荡器的振荡频率的10%进行实际电路的设计的话,则用上述的TFT应该可构成在约40MHz频率下工作的电路。
因此,通过利用本说明书中公开的发明,可得到能构成要求高速工作(一般是几十MHz以上的工作速度)的电路的薄膜晶体管。
特别是关于S值,可得到100(mV/dec)以下的、可与利用单晶硅晶片制造的MOS型晶体管比美的特性。
通过利用本说明书中公开的发明,可提供用TFT将要求各种高速工作的电路在同一基板上进行集成化的构成。并可提供其制造方法。
Claims (12)
1.一种半导体器件,包括n沟道薄膜晶体管,所述n沟道薄膜晶体管包括:
在绝缘表面上包含结晶硅的半导体膜,所述半导体膜包含卤族元素并包括沿第一方向延伸的至少两个结晶体;
形成在该半导体膜上的栅极绝缘膜;
形成在所述半导体膜的沟道区上方的栅电极,其间插入了栅极绝缘膜,
其中在所述沟道区中的载流子移动方向与所述第一方向基本一致,所述半导体膜具有和±30一样小的表面粗糙度,并且
所述n沟道薄膜晶体管具有200-300cm2/Vs的迁移率。
2.根据权利要求1的半导体器件,其中所述半导体膜的厚度是150-450。
3.根据权利要求1的半导体器件,其中所述半导体器件的S值小于100mV/dec。
4.一种有源矩阵显示器件,包括:
形成在基板上的薄膜晶体管,所述薄膜晶体管包括:
在绝缘表面上包含结晶硅的半导体膜;
形成在该半导体膜上的栅极绝缘膜;
形成在所述半导体膜的沟道区上方的栅电极,其间插入了栅极绝缘膜,
覆盖所述薄膜晶体管的第一绝缘膜,所述第一绝缘膜包括氮化硅;
形成在所述第一绝缘膜上方的第二绝缘膜,所述第二绝缘膜包括树脂;
形成在所述第二绝缘膜上方并电连接到所述薄膜晶体管的像素电极,
其中所述半导体膜具有和±30一样小的表面粗糙度。
5.根据权利要求4的有源矩阵显示器件,其中所述半导体膜包含沿第一方向延伸的至少两个结晶体,并且在所述沟道区中的载流子移动方向与所述第一方向基本一致。
6.根据权利要求4的有源矩阵显示器件,其中所述半导体膜的厚度是150-450。
7.根据权利要求4的有源矩阵显示器件,其中所述半导体器件的S值小于100mV/dec。
8.根据权利要求4的有源矩阵显示器件,还包括在第二绝缘膜上方和所述像素电极下方的第三绝缘膜。
9.根据权利要求4的有源矩阵显示器件,其中所述有源矩阵显示器件是液晶显示器件。
10.根据权利要求4的有源矩阵显示器件,其中所述有源矩阵显示器件是EL显示器件。
11.一种电话,包括有源矩阵显示器件、天线、语音输入部分和语音输出部分,所述有源矩阵显示器件包括:
形成在基板上的薄膜晶体管,所述薄膜晶体管包括:
在绝缘表面上包含结晶硅的半导体膜;
形成在该半导体膜上的栅极绝缘膜;
形成在所述半导体膜的沟道区上方的栅电极,其间插入了栅极绝缘膜,
覆盖所述薄膜晶体管的第一绝缘膜,所述第一绝缘膜包括氮化硅;
形成在所述第一绝缘膜上方的第二绝缘膜,所述第二绝缘膜包括树脂;
形成在所述第二绝缘膜上方并电连接到所述薄膜晶体管的像素电极,
其中所述半导体膜具有和±30一样小的表面粗糙度。
12.根据权利要求11的电话,其中所述半导体膜包含沿第一方向延伸的至少两个结晶体,并且在所述沟道区中的载流子移动方向与所述第一方向基本一致。
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-
1997
- 1997-01-16 US US08/783,866 patent/US5985740A/en not_active Expired - Lifetime
- 1997-01-20 CN CN2006100996770A patent/CN1881595B/zh not_active Expired - Lifetime
- 1997-01-20 CN CN2006100996766A patent/CN1881594B/zh not_active Expired - Fee Related
- 1997-01-20 CN CNB2005100657955A patent/CN100444406C/zh not_active Expired - Fee Related
- 1997-01-20 CN CNB2006100996501A patent/CN100505312C/zh not_active Expired - Fee Related
- 1997-01-20 CN CNB200510067218XA patent/CN100444407C/zh not_active Expired - Lifetime
- 1997-01-20 CN CNB2005100835844A patent/CN100468777C/zh not_active Expired - Fee Related
- 1997-01-20 CN CN2006101016286A patent/CN1901205B/zh not_active Expired - Lifetime
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Also Published As
Publication number | Publication date |
---|---|
CN1881595A (zh) | 2006-12-20 |
CN1901205A (zh) | 2007-01-24 |
CN1901205B (zh) | 2012-06-20 |
CN100444406C (zh) | 2008-12-17 |
CN100468777C (zh) | 2009-03-11 |
CN1697198A (zh) | 2005-11-16 |
US5985740A (en) | 1999-11-16 |
CN1722468A (zh) | 2006-01-18 |
CN1881594A (zh) | 2006-12-20 |
CN100444407C (zh) | 2008-12-17 |
CN1881594B (zh) | 2012-02-08 |
CN1697199A (zh) | 2005-11-16 |
US6316810B1 (en) | 2001-11-13 |
CN100505312C (zh) | 2009-06-24 |
CN1881595B (zh) | 2012-02-08 |
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