CN106536609A - 具有离子清除剂的热界面材料 - Google Patents

具有离子清除剂的热界面材料 Download PDF

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CN106536609A
CN106536609A CN201480080255.1A CN201480080255A CN106536609A CN 106536609 A CN106536609 A CN 106536609A CN 201480080255 A CN201480080255 A CN 201480080255A CN 106536609 A CN106536609 A CN 106536609A
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thermal interfacial
interfacial material
ion scavenger
formula
material described
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CN106536609B (zh
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刘亚群
曾亮
王晖
B.张
黄红敏
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Honeywell International Inc
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Honeywell International Inc
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Abstract

热界面材料包含至少一种聚合物、至少一种导热填料、和至少一种离子清除剂。在一些实施方案中，所述离子清除剂为络合剂，其选自含氮络合剂、含磷络合剂、和基于羟基羧酸的络合剂。

Description

具有离子清除剂的热界面材料
发明领域
本公开主要涉及热界面材料，更具体地涉及包含离子清除剂的热界面材料。
相关技术的描述
热界面材料(TIM)广泛应用于从电子元件例如中央处理器、视频图形阵列、服务器、游戏控制器、智能电话、LED板等散热。热界面材料通常用于将余热从电子元件转移至散热器(heat spreader)，例如受热器(heat sink)。
在图1中示例了包括热界面材料的典型的电子器件包结构10。所述电子器件包结构10示例性地包括生热元件，例如电子芯片12，和一个或多个散热元件，例如散热器14和受热器16。示例性的散热器14和受热器包括金属、金属合金、或镀金属的基底，例如铜、铜合金、铝、铝合金、或镀镍的铜。TIM材料，例如TIM18和TIM20，在生热元件和一个或多个散热元件之间提供热连接。电子器件包结构10包括连接电子芯片12和散热器14的第一TIM 18。TIM18通常称为“TIM 1”。电子器件包结构10包括连接散热器14和受热器16的第二TIM 20。TIM18通常称为“TIM 2”。在另一实施方案中，电子器件包结构10不包括散热器14，并且TIM（未示出）将电子芯片12直接连接至受热器16。将电子芯片12直接连接至受热器16的此类TIM通常称为TIM 1.5。
热界面材料包括导热油酯、油酯状材料、弹性体带、和相变材料。常规的热界面材料包括例如导热片(gap pads)和导热垫(thermal pads)的元件。
在以下专利和申请中公开了示例性的热界面材料，它们的公开内容整体并入本文中作为参考：U.S. 6,238,596、U.S. 6,451,422、U.S. 6,605,238、U.S. 6,673,434、U.S.6,706,219、U.S. 6,797,382、U.S. 6,811,725、U.S. 7,172,711、U.S. 7,244,491、U.S. 7,867,609、U.S. 2007/0051773、U.S. 2008/0044670、U.S. 2009/0111925、U.S. 2010/0129648和U.S. 2011/0308782。
热界面材料的降解通常发生在聚合物断链过程中，例如图2A中示例的。如图2A中所示，引发能量产生引发反应RH → R· + H·以形成自由基R·。该自由基与氧分子结合形成过氧化物自由基ROO·。该过氧化物自由基可以键合至从另一R基团转移的质子以形成过氧化物ROOH，以及新R·自由基，其可以与新氧分子结合。继续进行支化反应ROOH →RO· + HO·形成RO·自由基和HO·自由基。RO·和HO·参与剩余聚合物链的断裂，以及通过不希望的交联进行的热界面材料的脆裂。
在典型的自氧化循环中，自由基引发反应速度取决于产生R·自由基的引发能量的提供和材料中的污染物。然而，由于参与每个反应的相对高的活化能量，引发反应和支化反应都相对缓慢。
如图2B中所示，引发反应和支化反应各自都能够由金属离子催化。相比于图2A中示例的未催化的反应，这些金属离子催化的反应具有相对低的活化能。这导致生成比图2A的未催化循环更多的自由基，其导致热界面材料的更加快速的降解。
如图1所示例的，TIM材料，例如TIM 18或TIM 20的至少一个表面，可以与金属表面，例如散热器14或受热器16直接接触。此类金属表面可以提供金属离子以催化引发和支化反应，例如从可以在表面上形成的金属氧化物。例如，铜离子可以与构成TIM的聚合物相互作用，特别是在热存在下，以在聚合物中形成游离自由基，其在工作期间引发使聚合物降解的断链。
期望对上文内容改善。
发明概述
本公开提供可用于从生热电子元件例如计算机芯片转移热量至散热结构例如散热器和受热器的热界面材料。
根据本公开的一个实施方案，所述热界面材料包含至少一种聚合物、至少一种导热填料、和至少一种离子清除剂。
在一个更具体的实施方案中，所述离子清除剂为络合剂，选自含氮络合剂、含磷络合剂、基于羟基羧酸的络合剂、和上述物质的组合。在另一更具体的实施方案中，所述离子清除剂选自酰胺化合物、三唑化合物、四唑化合物、三氮烯化合物、草酰胺化合物、丙二酰胺化合物、和上述物质的组合。在另一更具体的实施方案中，所述离子清除剂为酰胺化合物。在另一更具体的实施方案中，所述离子清除剂选自：十亚甲基二甲酰二水杨酰肼；3-(N-水杨酰基)氨基-1,2,4-三唑；2’,3-双[[3-[3, 5-二叔丁基-4-羟基苯基]丙酰基]]丙酰肼，和上述物质的组合。
在另一更具体的实施方案中，所述离子清除剂为根据式I至式XI的任一种或其组合的化合物：
式I – N-水杨叉基-N'水杨酰肼
式II - 草酰基双(苄叉基酰肼)
式III - N,N'-双(水杨酰基)肼
式IV - 3-(N-水杨酰基)氨基-1,2,4-三唑
式V - 2,2'-草酰胺基双[3-(3,5-二叔丁基-4-羟基苯基)丙酸乙酯]
式VI - N,N'-双(水杨叉基)乙二胺
式VII – N,N’-草酰二苯胺
式VIII - 甲基丙二酰二苯胺
式IX - N-甲酰基-N'-水杨酰肼
式X - 十亚甲基二甲酰二水杨酰肼
式XI - 二亚磷酸双(2,6-二叔丁基-4-甲基苯酯)季戊四醇酯。
在任何上述实施方案的一个更具体的实施方案中，基于所述热界面材料的总重量，所述热界面材料包含0.1 wt.%至5 wt.%的离子清除剂。在一个更具体的实施方案中，基于所述热界面材料的总重量，所述热界面材料包含0.5 wt.%至1 wt.%的离子清除剂。
在任何上述实施方案的一个更具体的实施方案中，所述热界面材料进一步包含至少一种相变材料。在一个甚至更具体的实施方案中，所述相变材料为蜡。
在任何上述实施方案的一个更具体的实施方案中，所述热界面材料进一步包含至少一种偶联剂。在一个甚至更具体的实施方案中，所述偶联剂材料选自：钛酸盐偶联剂、锆酸盐偶联剂、和硅烷偶联剂、和上述物质的组合。在一个甚至更具体的实施方案中，所述偶联剂为钛酸盐偶联剂。
在任何上述实施方案的一个更具体的实施方案中，所述热界面材料进一步包含至少一种交联剂。
在任何上述实施方案的一个更具体的实施方案中，基于所述热界面材料的总重量计，所述热界面材料包含：5 wt.%至10 wt.%的至少一种聚合物；50 wt.%至95 wt.%的至少一种导热填料；和0.1 wt.%至5 wt.%的离子清除剂。在第一甚至更具体的实施方案中，基于所述热界面材料的总重量计，所述热界面材料包含：2 wt.%至5 wt.%的至少一种蜡；0.1至0.5 wt.%的至少一种抗氧化剂；1 wt.%至2 wt.%的至少一种偶联剂；和0.5 wt.%至0.6wt.%的至少一种交联剂；其中基于所述热界面材料的总重量计，所述热界面材料包含75wt.%至90 wt.%的至少一种导热填料。在第二甚至更具体的实施方案中，基于所述热界面材料的总重量计，所述热界面材料包含：2 wt.%至5 wt.%的至少一种蜡；0.1至0.5 wt.%的至少一种抗氧化剂；1 wt.%至2 wt.%的至少一种偶联剂；和0.5 wt.%至0.6 wt.%的至少一种交联剂；其中基于所述热界面材料的总重量计，所述热界面材料包含75 wt.%至90 wt.%的至少一种导热填料。在一个甚至更具体的实施方案中，所述热界面材料包含：1.5 wt.%至2wt.%的至少一种蜡；0.1至1 wt.%的至少一种抗氧化剂；和0.5 wt.%至1 wt.%的至少一种偶联剂；其中基于所述热界面材料的总重量计，所述热界面材料包含85 wt.%至95 wt.%的至少一种导热填料。在另一甚至更具体的实施方案中，所述热界面材料进一步包含0.1 wt.%至1 wt.%的至少一种交联剂。
根据本公开的一个实施方案，电子元件包括受热器、电子芯片、和具有第一表面层和第二表面层的热界面材料，所述热界面材料位于所述受热器和电子芯片之间，所述热界面材料包含：至少一种聚合物；至少一种导热填料；和至少一种离子清除剂。在一些实施方案中，所述热界面材料根据上文任一实施方案。在第一更具体的实施方案中，所述第一表面层与所述电子芯片的表面接触，第二表面层与所述受热器接触。在第二更具体的实施方案中，所述电子元件进一步包括位于受热器和电子芯片之间的散热器，其中所述第一表面层与电子芯片的表面接触，第二表面层与散热器接触。在第三更具体的实施方案中，所述电子元件进一步包括位于所述受热器和电子芯片之间的散热器，其中第一表面层与散热器的表面接触，第二表面层与受热器接触。
附图的简要描述
通过参照本发明实施方案的以下描述和附图，本公开的上述和其他特征和优点以及获得它们的方式变得更明显，并且会更好地理解本发明本身，其中：
图1图示了典型的电子器件包结构；
图2A示例了典型的TIM的降解机制；
图2B示例了金属催化的降解机制；和
图3示例了采用离子清除剂的典型的络合反应。
对应的附图标记表示全部几个视图的相应部分。本文中所述的范例示例了本发明的典型的实施方案，并且此类范例并非理解为以任何方式限制本发明的范围。
详细描述
A. 热界面材料
本发明涉及在从电子元件转移走热量中使用的热界面材料(TIM)。在一个典型的实施方案中，TIM包含聚合物基体、至少一种导热填料、和至少一种离子清除剂。
在一些实施方案中，所述TIM可以任选包含以下组分的一种或多种：偶联剂、抗氧化剂、相变材料、和其他添加剂。
在不希望受任何理论束缚的情况下，相信添加离子清除剂抑制金属离子诱导的游离自由基形成。据信，离子清除剂捕获并结合络合物中的金属离子使得金属离子不再具有空电子轨道并且有效地失去引发在聚合物中形成游离自由基的能力。
在图3中示例了典型的络合反应。在图3中，离子清除剂，示例性地二酰肼，与金属离子，示例性地氧化铜反应。在不希望受任何特定理论束缚的情况下，据信金属离子吸引到离子清除剂上的一个或多个孤对电子。金属离子和孤对电子之间的吸引形成络合物，其中金属离子不再具有空电子轨道并且不参与图2B的金属催化的反应。
如下文示出的实施例中示例的，在热界面材料中包含离子清除剂抑制聚合物降解至出乎预料的程度。
1. 聚合物
TIM包含聚合物，例如弹性体。在一些实施方案中，所述聚合物包括硅酮橡胶、硅氧烷橡胶、硅氧烷共聚物、或其他合适的含硅酮橡胶。在一些实施方案中，所述聚合物包括一种或多种烃橡胶化合物，包括饱和或不饱和的烃橡胶化合物。
典型的饱和橡胶包括乙烯-丙烯橡胶(EPR, EPDM)、聚乙烯/丁烯、聚乙烯-丁烯-苯乙烯、聚乙烯-丙烯-苯乙烯、氢化聚二烯“单醇”（例如氢化聚丁二烯单醇、氢化聚丙二烯单醇、氢化聚戊二烯单醇）、氢化聚二烯“二醇” （例如氢化聚丁二烯二醇、氢化聚丙二烯二醇、氢化聚戊二烯二醇）和氢化聚异戊二烯、聚烯烃弹性体、和其共混物。在一些实施方案中，所述聚合物为氢化聚丁二烯单醇。
典型的不饱和橡胶包括聚丁二烯、聚异戊二烯、聚苯乙烯-丁二烯和其共混物、或饱和和不饱和橡胶化合物的共混物。
基于TIM的总重量计，TIM可以低至1wt.%、2 wt.%、5 wt. %、6 wt. %、7 wt. %、8wt. %，高至10 wt.%、20 wt.%、25 wt.%、50 wt.%或更高，或在上述值的任何两个之间限定的任何范围内的量包含一种或多种聚合物。
2. 导热填料
TIM包含一种或多种导热填料。典型的导热填料包括金属、合金、非金属、金属氧化物和陶瓷、和其组合。所述金属包括但不限于铝、铜、银、锌、镍、锡、铟和铅。所述非金属包括但不限于碳、石墨、碳纳米管、碳纤维、石墨烯和氮化硅。所述金属氧化物或陶瓷包括但不限于氧化铝、氮化铝、氮化硼、氧化锌和氧化锡。
基于TIM的总重量，TIM可以低至10 wt.%、20 wt.%、25 wt.%、50 wt.%，高至75wt.%、80 wt.%、85 wt.%、90 wt.%、95 wt.%，或在任何两个上述值之间限定的任何范围内的量包含一种或多种导热填料。
3. 离子清除剂
TIM包含一种或多种离子清除剂。典型的离子清除剂包括含氮络合剂、含磷络合剂、和基于羟基羧酸的络合剂。在一些典型的实施方案中，所述离子清除剂选自酰胺化合物，例如酰肼或二酰肼。在一些典型的实施方案中，所述离子清除剂选自三唑化合物、四唑化合物、三氮烯化合物、草酰胺化合物、或丙二酰胺化合物。在一些典型的实施方案中，所述离子清除剂选自十亚甲基二甲酰二水杨酰肼；3-(N-水杨酰基)氨基-1,2,4-三唑；和2’,3-双[[3-[3, 5-二叔丁基-4-羟基苯基]丙酰基]]丙酰肼。
在另一更具体的实施方案中，所述离子清除剂为根据式I至式XI的任一个或其组合的化合物：
式I – N-水杨叉基-N'水杨酰肼
式II - 草酰基双(苄叉基酰肼)
式III - N,N'-双(水杨酰基)肼
式IV - 3-(N-水杨酰基)氨基-1,2,4-三唑
式V - 2,2'-草酰胺基双[3-(3,5-二叔丁基-4-羟基苯基)丙酸乙酯]
式VI - N,N'-双(水杨叉基)乙二胺
式VII – N,N’-草酰二苯胺
式VIII - 甲基丙二酰二苯胺
式IX - N-甲酰基-N'-水杨酰肼
式X - 十亚甲基二甲酰二水杨酰肼
式XI - 二亚磷酸双(2,6-二叔丁基-4-甲基苯酯)季戊四醇酯。
基于TIM的总重量，TIM可以低至0.1 wt.%、0.2 wt.%、0.5 wt.%、1 wt.%，高至1.5wt.%、2 wt.%、5 wt.%、10 wt.%，或在任何两个上述值之间限定的任何范围内的量包含一种或多种离子清除剂。
4. 偶联剂
在一些典型的实施方案中，TIM包含一种或多种偶联剂。典型的偶联剂包括有机金属化合物，例如钛酸盐偶联剂或锆酸盐偶联剂，和有机化合物，例如硅烷偶联剂。典型的偶联剂包括2,2 (双2-丙烯醇根合甲基)丁醇根合, 三(二辛基)焦磷酸根合-O钛IV；2,2 (双2-丙烯醇根合甲基)丁醇根合, 三(二异辛基)焦磷酸根合-O锆IV；2-丙醇根合, 三(二辛基)-焦磷酸根合-O钛IV与1 mol亚磷酸二异辛酯的加合物；双(二辛基)焦磷酸根合-O, 氧代乙二醇根合钛IV (加合物), 双亚磷酸(氢)(二辛酯)-O；双(二辛基)焦磷酸根合-O, 乙二醇根合钛IV (加合物), 双亚磷酸氢(二辛酯); 和2,2-双(2-丙烯醇根合甲基) 丁醇根合, 环二[2,2-(双2-丙烯醇根合甲基)丁醇根合], 焦磷酸根合-O,O锆IV。
在一些典型的实施方案中，基于TIM的总重量，TIM可以低至0.1 wt.%、0.5 wt.%、0.67 wt.%、0.75 wt.%，高至1 wt.%、1.5 wt.%、2 wt.%、5 wt.%、10 wt.%，或在任何两个上述值之间限定的任何范围内的量包含一种或多种偶联剂。
5. 抗氧化剂
在一些典型的实施方案中，TIM包含一种或多种抗氧化剂。典型的抗氧化剂包括酚型、胺型抗氧化剂、或任何其他合适类型的抗氧化剂、或其组合。所述酚或胺型抗氧化剂还可以为位阻酚或胺型抗氧化剂。典型的酚型抗氧化剂包括3-(3,5-二叔丁基-4-羟基苯基)丙酸十八醇酯。典型的胺型抗氧化剂包括2,6-二叔丁基-4-(4,6-双(辛硫基)-1,3,5-三嗪-2-基氨基)苯酚。典型的位阻抗氧化剂包括位阻含硫酚类抗氧化剂。典型的抗氧化剂包括可从BASF获得的Irganox ®抗氧化剂。
尽管离子清除剂和抗氧化剂都降低TIM的氧化降解，但据信离子清除剂通过捕获和结合络合物中的金属离子起作用从而金属离子不再具有净电荷并且有效失去参与图2B的金属催化的反应的能力。相比之下，据信抗氧化剂一般而言通过转移电子至氧化剂例如图2A的自由基起作用。
在一些典型的实施方案中，基于TIM的总重量，TIM可以低至0.05 wt.%、0.1 wt.%、0.5 wt.%、1 wt.%，高至1.5 wt.%、2 wt.%、5 wt.%、10 wt.%，或在任何两个上述值之间限定的任何范围内的量包含一种或多种抗氧化剂。
6. 相变材料
在一些典型的实施方案中，TIM包含一种或多种相变材料。相变材料是熔点或熔点范围为在其中使用TIM的电子器件的一部分的操作温度或低于该操作温度的材料。典型的相变材料为蜡。其他典型的相变材料包括低熔点合金，例如Wood的金属、Field的金属、或熔点为约20℃至90℃的金属或合金。
在一些实施方案中，所述相变材料的相变温度低至20℃、30℃、40℃、45℃、50℃，高至60℃、70℃、80℃、90℃、100℃、110℃，或在任何两个上述值之间限定的任何范围内。在一些更具体的实施方案中，所述相变材料的相变温度低至30℃、40℃、45℃，高至50℃、60℃、70℃，或在任何两个上述值之间限定的任何范围内。
典型的蜡包括聚乙烯(PE)蜡、石蜡、AC-1702（一种聚乙烯蜡）、AC-430（一种乙烯-乙酸乙烯酯蜡的共聚物）、和AC-6702（一种氧化聚乙烯蜡），每个都可获自HoneywellInternational Inc.、与聚四氟乙烯共混的聚乙烯蜡，例如可获自Nanjing Tianshi NewMaterial Technologies的PEW-0602F蜡、可获自International Group, Inc.的TAC蜡和可获自Hangzhou Ruhr Tech的RT44HC。
基于TIM的总重量，TIM可以低至0.5 wt.%、1 wt.%、2 wt.%、3 wt.%、5 wt.%、10wt.%，高至20 wt.%、25 wt.%、50 wt.%或更高，或在任何两个上述值之间限定的任何范围内的量包含一种或多种相变材料。
7. 其他添加剂
在一些典型的实施方案中，TIM包含一种或多种另外的添加剂。典型的添加剂包括交联剂，例如烷基化的三聚氰胺甲醛树脂、颜料、和溶剂，例如异链烷烃流体。在一些典型的实施方案中，基于TIM的总重量，TIM可以低至0.1 wt.%、0.5 wt.%、1 wt.%，高至1.5 wt.%、2wt.%、5 wt.%、10 wt.%，或在任何两个上述值之间限定的任何范围内的量包含一种或多种添加剂。
8. 热界面材料的典型配方
在第一非限定性示例性实施方案中，TIM包含约1 wt.%至约25 wt.%聚合物，约50 wt.%至约95 wt.%导热填料，和约0.1 wt.%至约5 wt.%离子清除剂。在一个更具体的实施方案中，所述离子清除剂为酰胺化合物，例如酰肼或二酰肼。在一个甚至更具体的实施方案中，所述离子清除剂选自癸烷二酸二水杨酰肼；3-(N-水杨酰基)氨基-1,2,4-三唑；和2’,3-双[[3-[3, 5-二叔丁基-4-羟基苯基]丙酰基]]丙酰肼。
在第二示例性实施方案中，其为第一示例性实施方案的更具体的实施方案，TIM进一步包含约1 wt.%至约5 wt.%的至少一种相变材料。
在第三示例性实施方案中，其为第一或第二示例性实施方案的更具体实施方案，TIM包含约0.1 wt.%至约5 wt.%的至少一种交联剂。
在第四示例性实施方案中，其为第一至第三示例性实施方案任一个的更具体实施方案，TIM包含约0.1 wt.%至约5 wt.%的至少一种偶联剂。
在第五示例性实施方案中，其为第一至第四示例性实施方案的任一个的更具体实施方案，TIM包含约0.1 wt.%至约5 wt.%至少一种相变材料。
9. 热界面材料的典型性质
在一些典型的实施方案中，包含离子清除剂的热界面材料具有比不包含离子清除剂的类似配制的热界面材料更大的耐降解性。所述耐降解性的特征可能在于氧化诱导时间(OIT)测试，例如通过ASTM D3859-07测定，其公开内容整体并入本文中作为参考。较长的OIT时间表示较好的热稳定性。
在一些典型的实施方案中，包含离子清除剂的TIM的OIT比不含离子清除剂的类似配制的TIM的OIT低至高20%、高25%、高30%、高50%、高75%、高100%，高至高150%、高200%、高300%、高375%、高400%、高500%或更高，或在任何两个上述值之间限定的任何范围内。
在一些典型的实施方案中，包含离子清除剂的TIM的OIT低至30分钟、45分钟、60分钟，高至75分钟、90分钟、120分钟、150分钟或更高，或在任何两个上述值之间限定的任何范围内。
在一些典型的实施方案中，与金属表面接触的TIM的OIT低至15分钟、20分钟、30分钟、45分钟，高至60分钟、75分钟、90分钟、120分钟、150分钟或更高，或在任何两个上述值之间限定的任何范围内。
在一些典型的实施方案中，所述热界面材料的热阻低至0.05℃ cm2/W、0.08℃cm2/W、0.09℃ cm2/W，高至0.1℃ cm2/W、0.5℃ cm2/W、1℃ cm2/W、2℃ cm2/W，或在任何两个上述值之间限定的任何范围内。
在一些典型的实施方案中，在120℃的温度、2个大气压的压力和85%的相对湿度下进行高加速应力测试(HAST)处理之后，所述热界面材料具有不变的热阻并且没有可见的TIM的降解。热阻可以不改变持续短至90小时、120小时、150小时，长至180小时、190小时、200小时或更长，或在任何两个上述值之间限定的任何范围内。
在一些典型的实施方案中，在150℃的温度下经历烘焙测试处理之后，所述热界面材料具有不变的热阻并且没有可见的TIM的降解。热阻可以不改变持续短至1000小时、1500小时、2000小时，长至2200小时、2500小时、2800小时或更长，或在任何两个上述值之间限定的任何范围内。
B. 形成热界面材料的方法
在一些典型的实施方案中，通过在经加热的混合器中组合单独的组分并将该组合物共混在一起制备TIM。然后，可以将经共混的组合物烘焙。
在一些典型的实施方案中，在低至25℃, 50℃, 75℃, 80℃，高至100℃, 125℃,150℃, 170℃，或在任何两个上述值之间限定的任何范围内的温度下烘焙TIM。在一些典型的实施方案中，TIM烘焙低至0.5分钟、1分钟、30分钟、1小时、2小时，长至8小时、12小时、24小时、36小时、48小时，或在任何上述值之间限定的任何范围内。典型的烘焙条件为80℃持续30分钟。
C. 使用热界面材料的应用
再次参照图1，在一些典型的实施方案中，包含离子清除剂的热界面材料放置在电子元件12和散热器14之间作为TIM 1，表示成TIM 18。在一些典型的实施方案中，包含离子清除剂的热界面材料放置在散热器14和受热器16之间作为TIM 2，表示成TIM 20。在一些典型的实施方案中，包含离子清除剂的热界面材料放置在电子元件12和受热器16之间作为TIM1.5（未示出）。
实施例
根据在表1中提供的配方制备TIM。
表1
实施例1和对比例1和2的配方(wt.%)
实施例1 对比例1 对比例2
弹性体 6.22 6.22 6.22
蜡 1.78 1.78 1.78
总抗氧化剂 0.5 0.5 0.5
钛偶联剂 0.67 0.67 0.67
铝粉导热填料 90.83 90.83 90.83
交联剂 0.6 - 0.6
离子清除剂 0.5 - -
为了制备实施例1，将6.22份(重量) Kraton弹性体（羟基封端的乙烯丁烯共聚物，特点：单醇）、1.78份熔点为约45℃的微晶蜡、0.5总份的抗氧化剂混合物组合并在经加热的混合器中共混直到该组合已经熔化并具有基本上均质的外观。添加0.67份2, 2 (双2-丙烯醇根合甲基) 丁醇根合, 三(二辛基)焦磷酸根合-O钛IV偶联剂，并将该组合再次共混，直到该组合具有基本上均质的外观。添加90.83份铝粉、导热填料，并将该组合再次共混，直到其具有基本上均质的外观。最后，添加0.6份Cymel交联剂树脂（烷基化的三聚氰胺甲醛树脂）和0.5份离子清除剂Songnox® 1024。最终的组合具有均质外观。
为了制备对比例1，将6.22份Kraton弹性体（羟基封端的乙烯丁烯共聚物，特点：单醇）、1.78份熔点为约45℃的微晶蜡和0.50wt %抗氧化剂组合并在经加热的混合器中共混直到该组合已经熔化并具有基本上均质的外观。添加0.67份 2, 2 (双2-丙烯醇根合甲基)丁醇根合, 三(二辛基)焦磷酸根合-O钛IV，并将该组合再次共混，直到该组合具有基本上均质外观。添加90.83份铝粉，并将该组合再次共混，直到其具有基本上均质的外观。
为了制备对比例2，将6.22份Kraton弹性体（羟基封端的乙烯丁烯共聚物，特点：单醇）、1.78份熔点为约45℃的微晶蜡和0.50wt %抗氧化剂组合并在经加热的混合器中共混，直到该组合已经熔化并具有基本上均质的外观。添加0.67份2, 2 (双2-丙烯醇根合甲基)丁醇根合, 三(二辛基)焦磷酸根合-O钛IV，并将该组合再次共混，直到该组合具有基本上均质的外观。添加90.83份铝粉，并将该组合再次共混，直到其具有基本上均质的外观。最后添加0.60份Cymel树脂（烷基化的三聚氰胺甲醛树脂）。最终的组合具有均质的外观。
对于每个TIM，进行高加速应力测试(HAST)。在90℃下在衬膜之间捆扎该TIM达15分钟并切成10mm方块。移出所述衬并将方块样品放置在涂镍的铜散热器和硅模头之间，形成“测试夹心物”。使用由ESPEC供应的环境室，在130℃的温度、2个大气压的压力和85%的相对湿度下处理该样品持续96-192小时。在样品处理之前和之后使用测试夹心物的快速扩散率确定样品的热阻。使用配备有氙光源的Netzsch LFA 447设备测定快速扩散率。
周期性检测样品，将HAST时间记录为最终时间，其中所述材料满足以下标准：（1）TIM没有明显可见的降解，并且在TIM和涂镍的铜散热器之间或在TIM和硅模头之间没有层离。（2）另外，热性能没有明显降低（在下文进一步描述对热性能的测试）。具体地，测试夹心物的热阻在HAST测试之后与之前相比是相同的（两个值都是0.08-0.09℃.cm/W）。
对于每个TIM，进行烘焙测试。在90℃下在衬膜之间捆扎TIM达15分钟，并切成10mm方块。移出该衬并将方块样品放置在涂镍的铜散热器和硅模头之间，形成“测试夹心物”。使用由上海JINGHONG供应的Oven D2F-6050对该样品施以150℃烘炉持续200至3000小时。使用测试夹心物的快速扩散率在样品处理之前和之后确定样品的热阻。使用配备有氙光源的Netzsch LFA 447设备测定快速扩散率。
周期性检测所述材料，将烘焙时间记录为最终时间，其中所述材料满足以下标准：（1）TIM没有明显可见的降解，并且在TIM和涂镍的铜散热器之间或在TIM和硅模头之间没有层离。（2）另外，热性能没有明显降低（在下文进一步描述对热性能的测试）。具体地，测试夹心物的热阻在烘焙测试之后与之前相比是相同的（两个值都是0.08-0.09℃.cm/W）。
对于每个TIM，按照ASTM D3859-07标准进行氧化诱导时间(OIT)测试。OIT为在DSC（差示扫描量热器）中进行的标准化测试，其测量待测材料的热稳定水平。较长时间表示较好的热稳定性。上述的10-30mg混合样品通过TA Instrument供应的DSC Q100进行OIT测试。测试条件为50ml/min O2流速和210℃峰值温度（采用20℃/min倾斜升温）。
在表2中示出OIT、HAST和烘焙测试结果：
表2
性能测试结果
性能 对比例1 对比例2 实施例1
在时间0下的平均TI (℃.cm2/W) 0.08-0.09 0.08-0.09 0.08-0.09
氧化诱导时间 - 210℃ (min) 35.85 42.15 77.54
HAST - 130℃, 85%RH, 2atm (hrs) 96 192 > 192
150℃烘焙测试 (hrs) 1000 1500 >= 2800
如表2中所示，实施例I具有与对比例I和对比例II类似的初始热阻，和在HAST测试中类似或更好的性能。另外，实施例I具有明显比对比例I或对比例II更长的OIT和烘焙测试结果时间。
根据表3中提供的配方制备第二组TIM。
表3
实施例2-4和对比例4-5的配方(wt.%)
实施例2 对比例3 实施例3 实施例4 对比例4
PCM45F 100 100 - - -
弹性体 - - 12.5 12.5 12.5
钛偶联剂 - - 1.5 1.5 1.5
铝粉导热填料 - - 71.66 71.66 71.66
氧化锌粉导热填料 - - 14.34 14.34 14.34
离子清除剂 0.6 - 0.6 1.8 -
为了制备实施例2，将100份PCM45F（由Honeywell International, Inc.供应）、包含相变材料的TIM材料和0.6份Songnox® 1024（由SONGWON供应）组合，并在经加热的混合器中共混，直到该组合已经熔化并具有基本上均质的外观。
对比例3为不含离子清除剂的PCM45F。
为了制备实施例3，将12.5份Kraton弹性体（羟基封端的乙烯丁烯共聚物，特点：单醇）、1.5份2-丙醇根合, 三异十八醇根合-O钛IV和0.6份离子清除剂Songnox® 1024组合并共混，直到该组合具有基本上均质的外观。添加71.66份铝粉和14.34份氧化锌粉，并将该组合再次共混，直到其具有基本上均质的外观。
为了制备实施例4，将12.5份Kraton弹性体（羟基封端的乙烯丁烯共聚物，特点：单醇）、1.5份2-丙醇根合, 三异十八醇根合-O钛IV和1.8份离子清除剂Songnox® 1024组合并共混，直到该组合具有基本上均质的外观。添加71.66份铝粉和14.34份氧化锌粉，并将该组合再次共混，直到其具有基本上均质的外观。
为了制备对比例4，将12.5份Kraton弹性体（羟基封端的乙烯丁烯共聚物，特点：单醇）和1.5份2-丙醇根合, 三异十八醇根合-O钛IV组合并共混，直到该组合具有基本上均质的外观。添加71.66份铝粉和14.34份氧化锌粉，并将该组合再次共混，直到其具有基本上均质的外观。
对于每个TIM，按照上文讨论的ASTM D3859-07标准进行氧化诱导时间(OIT)测试。在表4中示出上述材料的OIT测试结果：
表4
OIT测试结果
样品 OIT结果(min)
实施例2 57.92
对比例3 24.56
实施例3 92.58
实施例4 145.50
对比例4 23.28
如表4中所示，实施例2具有明显比对比例3更长的OIT时间，并且实施例3和4具有比对比例4明显更长的OIT时间。另外，实施例4，其具有两倍于实施例3的离子清除剂，具有比实施例3明显更长的OIT时间。
尽管本发明已经描述成具有典型的设计，但本发明能够在本公开的精神和范围内进一步改变。因此，本申请意在使用其一般原则覆盖本发明的任何变化、使用或改编。此外，本申请意在覆盖例如在本发明所属领域中已知或常规实践内之类的与本公开的背离并且其落入所附权利要求书的限定内。

Claims (20)

1.热界面材料，其包含：
至少一种聚合物；
至少一种导热填料；和
至少一种离子清除剂。
2.权利要求1所述的热界面材料，其中所述离子清除剂为络合剂，其选自含氮络合剂、含磷络合剂、和基于羟基羧酸的络合剂、和上述物质的组合。
3.权利要求1所述的热界面材料，其中所述离子清除剂选自酰胺化合物、三唑化合物、四唑化合物、三氮烯化合物、草酰胺化合物、丙二酰胺化合物、和上述物质的组合。
4.权利要求1所述的热界面材料，其中所述离子清除剂为酰胺化合物。
5.权利要求1所述的热界面材料，其中所述离子清除剂选自酰肼、二酰肼和上述物质的组合。
6.权利要求1所述的热界面材料，其中所述离子清除剂选自：十亚甲基二甲酰二水杨酰肼；3-(N-水杨酰基)氨基-1,2,4-三唑；和2',3-双[[3-[3, 5-二叔丁基-4-羟基苯基]丙酰基]]丙酰肼。
7.权利要求1所述的热界面材料，其中所述离子清除剂为根据选自式I至式XI或其组合的式的化合物：
式I – N-水杨叉基-N'水杨酰肼
式II - 草酰基双(苄叉基酰肼)
式III - N,N'-双(水杨酰基)肼
式IV - 3-(N-水杨酰基)氨基-1,2,4-三唑
式V - 2,2'-草酰胺基双[3-(3,5-二叔丁基-4-羟基苯基)丙酸乙酯]
式VI - N,N'-双(水杨叉基)乙二胺
式VII – N,N’-草酰二苯胺
式VIII - 甲基丙二酰二苯胺
式IX - N-甲酰基-N'-水杨酰肼
式X - 十亚甲基二甲酰二水杨酰肼
式XI – 二亚磷酸双(2,6-二叔丁基-4-甲基苯酯)季戊四醇酯。
8.权利要求1所述的热界面材料，其中基于所述热界面材料的总重量计，所述热界面材料包含0.1 wt.%至5 wt.%的离子清除剂。
9.权利要求1所述的热界面材料，其中基于所述热界面材料的总重量计，所述热界面材料包含0.5 wt.%至1 wt.%的离子清除剂。
10.权利要求1所述的热界面材料，其进一步包含至少一种相变材料。
11.权利要求10所述的热界面材料，其中所述至少一种相变材料为蜡。
12.权利要求1所述的热界面材料，其进一步包含至少一种偶联剂。
13.权利要求12所述的热界面材料，其中所述至少一种偶联剂选自：钛酸盐偶联剂、锆酸盐偶联剂、硅烷偶联剂、和上述物质的组合。
14.权利要求1所述的热界面材料，其进一步包含至少一种交联剂。
15.权利要求1所述的热界面材料，其进一步包含至少一种蜡、至少一种抗氧化剂、至少一种偶联剂、和至少一种交联剂。
16.权利要求1所述的热界面材料，其中基于所述热界面材料的总重量计，所述热界面材料包含：
5 wt.%至10 wt.%的至少一种聚合物；
50 wt.%至95 wt.%的至少一种导热填料；和
0.1 wt.%至5 wt.%的离子清除剂。
17.权利要求16所述的热界面材料，基于所述热界面材料的总重量计，其进一步包含：
2 wt.%至5 wt.%的至少一种蜡；
0.1至0.5 wt.%的至少一种抗氧化剂；
1 wt.%至2 wt.%的至少一种偶联剂；和
0.5 wt.%至0.6 wt.%的至少一种交联剂；
其中基于所述热界面材料的总重量计，所述热界面材料包含75 wt.%至90 wt.%的至少一种导热填料。
18.权利要求16所述的热界面材料，其进一步包含：
1.5 wt.%至2 wt.%的至少一种蜡；
0.1至1 wt.%的至少一种抗氧化剂；和
0.5 wt.%至1 wt.%的至少一种偶联剂；
其中所述热界面材料包含85 wt.%至95 wt.%的至少一种导热填料，基于所述热界面材料的总重量计。
19.权利要求18所述的热界面材料，其进一步包含0.1 wt.%至1 wt.%的至少一种交联剂。
20.电子元件，其包含：
受热器；
电子芯片；
具有第一表面层和第二表面层的热界面材料，所述热界面材料位于所述受热器和电子芯片之间，所述热界面材料包含：
至少一种聚合物；
至少一种导热填料；和
至少一种离子清除剂。
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106977923A (zh) * 2017-03-31 2017-07-25 广东工业大学 一种三氮烯混合物及其制备方法
CN111378402A (zh) * 2020-04-10 2020-07-07 山东宝龙达实业集团有限公司 一种羟基清除剂的制备方法及其应用

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160094385A (ko) 2013-12-05 2016-08-09 허니웰 인터내셔날 인코포레이티드 조절된 pH를 갖는 주석(II) 메탄술포네이트 용액
MX2016016984A (es) * 2014-07-07 2017-05-03 Honeywell Int Inc Material de interconexion termica con depurador ionico.
CN112080258A (zh) 2014-12-05 2020-12-15 霍尼韦尔国际公司 具有低热阻的高性能热界面材料
JP6436035B2 (ja) * 2015-09-25 2018-12-12 信越化学工業株式会社 熱軟化性熱伝導性シリコーングリース組成物、熱伝導性被膜の形成方法、放熱構造及びパワーモジュール装置
US10312177B2 (en) 2015-11-17 2019-06-04 Honeywell International Inc. Thermal interface materials including a coloring agent
CN109072051B (zh) * 2016-03-08 2023-12-26 霍尼韦尔国际公司 相变材料
US10501671B2 (en) 2016-07-26 2019-12-10 Honeywell International Inc. Gel-type thermal interface material
KR102547800B1 (ko) * 2016-08-23 2023-06-26 삼성전자주식회사 그래핀 퀀텀닷을 이용한 방열 구조체 및 그 제조방법
CN109152279A (zh) * 2017-06-27 2019-01-04 卓英社有限公司 导热部件
US11041103B2 (en) 2017-09-08 2021-06-22 Honeywell International Inc. Silicone-free thermal gel
US10428256B2 (en) 2017-10-23 2019-10-01 Honeywell International Inc. Releasable thermal gel
US10567084B2 (en) * 2017-12-18 2020-02-18 Honeywell International Inc. Thermal interface structure for optical transceiver modules
US11072706B2 (en) 2018-02-15 2021-07-27 Honeywell International Inc. Gel-type thermal interface material
US20190301814A1 (en) * 2018-04-03 2019-10-03 Nanotek Instruments, Inc. Metallized graphene foam having high through-plane conductivity
US11373921B2 (en) 2019-04-23 2022-06-28 Honeywell International Inc. Gel-type thermal interface material with low pre-curing viscosity and elastic properties post-curing
JP7453081B2 (ja) * 2019-08-13 2024-03-19 三ツ星ベルト株式会社 ゴム組成物ならびにその製造方法および用途
CN113766776B (zh) * 2021-08-03 2023-03-24 联想(北京)有限公司 电子设备
TW202344665A (zh) * 2022-02-09 2023-11-16 德商漢高股份有限及兩合公司 低熱阻的相變熱界面材料

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101445627A (zh) * 2008-12-11 2009-06-03 上海交通大学 高压直流电缆绝缘材料及其制备方法
US20110187009A1 (en) * 2008-08-04 2011-08-04 Takashi Masuko Adhesive composition, film-like adhesive, adhesive sheet and semiconductor device
CN102341474A (zh) * 2009-03-02 2012-02-01 霍尼韦尔国际公司 热界面材料及制造和使用它的方法
US20130199724A1 (en) * 2009-10-09 2013-08-08 Designer Molecules, Inc. Curatives for epoxy compositions

Family Cites Families (268)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1655133A (en) 1926-11-09 1928-01-03 Charles A Clase Inside micrometer gauge
JPS5137538B1 (zh) 1971-03-31 1976-10-16
US3748365A (en) 1972-05-26 1973-07-24 Airco Inc Electron beam heating system
JPS567298B2 (zh) 1973-06-18 1981-02-17
JPS5314131A (en) 1975-05-02 1978-02-08 Nobuyasu Doi Luster tinnlead alloy electroplating method
US4180498A (en) 1976-07-30 1979-12-25 Ciba-Geigy Corporation Hindered phenyl phosphites
CH630174A5 (de) 1978-04-05 1982-05-28 Hans Meyer Innenmessgeraet.
DE2933870A1 (de) 1979-08-21 1981-03-12 Siemens AG, 1000 Berlin und 8000 München N.n'-bis-salicyloyl-hydrazin als metalldesaktivator.
JPS5944306B2 (ja) 1982-09-24 1984-10-29 住友化学工業株式会社 Ｎ−ｔ−アルキルアミド類の製造法
JPS5967387A (ja) 1982-10-08 1984-04-17 Hiyougoken すず、鉛及びすず―鉛合金メッキ浴
US4565610A (en) 1983-12-22 1986-01-21 Learonal, Inc. Bath and process for plating lead and lead/tin alloys
US4524145A (en) 1984-09-04 1985-06-18 Bristol-Myers Company 4'-Deschlororebeccamycin pharmaceutical composition and method of use
JPS61105583A (ja) 1984-10-30 1986-05-23 松下電器産業株式会社 カラ−液晶表示装置
JP2611364B2 (ja) 1988-08-26 1997-05-21 上村工業株式会社 無電解錫めっき浴及び無電解錫めっき方法
DE59005446D1 (de) 1989-12-18 1994-05-26 Riedel De Haen Ag Verfahren und Vorrichtung zur Herstellung einer Lösung eines Buntmetallsulfonats.
US5167851A (en) 1991-04-22 1992-12-01 Thermoset Plastics, Inc. Hydrophilic thermally conductive grease
US5562814A (en) 1995-09-01 1996-10-08 Dale Electronics, Inc. Sludge-limiting tin and/or lead electroplating bath
US6005053A (en) 1996-01-22 1999-12-21 The Dow Chemical Company Polyolefin elastomer blends exhibiting improved properties
US6054198A (en) 1996-04-29 2000-04-25 Parker-Hannifin Corporation Conformal thermal interface material for electronic components
JP3662715B2 (ja) 1997-06-16 2005-06-22 アルプス電気株式会社 導電性材料および導電ペーストと電子機器
JP4015722B2 (ja) 1997-06-20 2007-11-28 東レ・ダウコーニング株式会社 熱伝導性ポリマー組成物
US6432497B2 (en) 1997-07-28 2002-08-13 Parker-Hannifin Corporation Double-side thermally conductive adhesive tape for plastic-packaged electronic components
US6096414A (en) 1997-11-25 2000-08-01 Parker-Hannifin Corporation High dielectric strength thermal interface material
FR2775481B1 (fr) 1998-02-27 2003-10-24 Rhodia Chimie Sa Composition silicone adhesive reticulable et utilisation de cette composition pour le collage de substrats divers
JP3948642B2 (ja) 1998-08-21 2007-07-25 信越化学工業株式会社 熱伝導性グリース組成物及びそれを使用した半導体装置
US6432320B1 (en) 1998-11-02 2002-08-13 Patrick Bonsignore Refrigerant and heat transfer fluid additive
US20040069454A1 (en) 1998-11-02 2004-04-15 Bonsignore Patrick V. Composition for enhancing thermal conductivity of a heat transfer medium and method of use thereof
JP2000143808A (ja) 1998-11-17 2000-05-26 Fuji Kobunshi Kogyo Kk 熱伝導性・電気絶縁性シリコーンゲル組成物
DE69921695T2 (de) 1998-12-15 2005-08-11 Parker-Hannifin Corp., Cleveland Verfahren zum anbringen eines thermischen phasenveränderlichen verbindungsmaterials
US6238596B1 (en) 1999-03-09 2001-05-29 Johnson Matthey Electronics, Inc. Compliant and crosslinkable thermal interface materials
US6391442B1 (en) 1999-07-08 2002-05-21 Saint-Gobain Performance Plastics Corporation Phase change thermal interface material
US6605238B2 (en) 1999-09-17 2003-08-12 Honeywell International Inc. Compliant and crosslinkable thermal interface materials
US6706219B2 (en) 1999-09-17 2004-03-16 Honeywell International Inc. Interface materials and methods of production and use thereof
US6975944B1 (en) 1999-09-28 2005-12-13 Alpha Mos Method and apparatus for monitoring materials used in electronics
US6496373B1 (en) 1999-11-04 2002-12-17 Amerasia International Technology, Inc. Compressible thermally-conductive interface
JP2001139818A (ja) 1999-11-12 2001-05-22 Dow Corning Toray Silicone Co Ltd 熱伝導性シリコーンゴム組成物
US6797382B2 (en) * 1999-12-01 2004-09-28 Honeywell International Inc. Thermal interface materials
US6673434B2 (en) 1999-12-01 2004-01-06 Honeywell International, Inc. Thermal interface materials
US6451422B1 (en) 1999-12-01 2002-09-17 Johnson Matthey, Inc. Thermal interface materials
US7369411B2 (en) 2000-02-25 2008-05-06 Thermagon, Inc. Thermal interface assembly and method for forming a thermal interface between a microelectronic component package and heat sink
US6372997B1 (en) 2000-02-25 2002-04-16 Thermagon, Inc. Multi-layer structure and method for forming a thermal interface with low contact resistance between a microelectronic component package and heat sink
US7078109B2 (en) 2000-02-25 2006-07-18 Thermagon Inc. Heat spreading thermal interface structure
US6940721B2 (en) 2000-02-25 2005-09-06 Richard F. Hill Thermal interface structure for placement between a microelectronic component package and heat sink
US6984685B2 (en) 2000-04-05 2006-01-10 The Bergquist Company Thermal interface pad utilizing low melting metal with retention matrix
US6797758B2 (en) 2000-04-05 2004-09-28 The Bergquist Company Morphing fillers and thermal interface materials
US6649325B1 (en) 2001-05-25 2003-11-18 The Bergquist Company Thermally conductive dielectric mounts for printed circuitry and semi-conductor devices and method of preparation
US6339120B1 (en) 2000-04-05 2002-01-15 The Bergquist Company Method of preparing thermally conductive compounds by liquid metal bridged particle clusters
US20030207128A1 (en) 2000-04-10 2003-11-06 Tomoaki Uchiya Thermally conductive sheet
US6400565B1 (en) 2000-04-21 2002-06-04 Dell Products L.P. Thermally conductive interface member
US6616999B1 (en) 2000-05-17 2003-09-09 Raymond G. Freuler Preapplicable phase change thermal interface pad
US6500891B1 (en) 2000-05-19 2002-12-31 Loctite Corporation Low viscosity thermally conductive compositions containing spherical thermally conductive particles
JP2002003830A (ja) 2000-06-26 2002-01-09 Denki Kagaku Kogyo Kk 高熱伝導性組成物とその用途
US6475962B1 (en) 2000-09-14 2002-11-05 Aos Thermal Compounds, Llc Dry thermal grease
US6610635B2 (en) 2000-09-14 2003-08-26 Aos Thermal Compounds Dry thermal interface material
US20030151030A1 (en) 2000-11-22 2003-08-14 Gurin Michael H. Enhanced conductivity nanocomposites and method of use thereof
US20040206941A1 (en) 2000-11-22 2004-10-21 Gurin Michael H. Composition for enhancing conductivity of a carrier medium and method of use thereof
US6573328B2 (en) 2001-01-03 2003-06-03 Loctite Corporation Low temperature, fast curing silicone compositions
MXPA03006498A (es) 2001-01-22 2003-10-15 Parker Hannifin Corp Entrecara termica de cambio de fase, de liberacion limpia.
CN1407141A (zh) 2001-03-16 2003-04-02 希普雷公司 镀锡
CN1260399C (zh) 2001-08-31 2006-06-21 罗姆和哈斯电子材料有限责任公司 电解镀锡溶液和用于电镀的方法
FR2831548B1 (fr) 2001-10-31 2004-01-30 Rhodia Chimie Sa Composition silicone adhesive reticulable comprenant comme agent thixotropant un compose a fonction amine cyclique portee par une chaine siloxanique
US20030112603A1 (en) 2001-12-13 2003-06-19 Roesner Arlen L. Thermal interface
US6620515B2 (en) 2001-12-14 2003-09-16 Dow Corning Corporation Thermally conductive phase change materials
KR100479857B1 (ko) 2001-12-28 2005-03-30 제일모직주식회사 반도체 패키지용 실리콘 수지 조성물
US6597575B1 (en) 2002-01-04 2003-07-22 Intel Corporation Electronic packages having good reliability comprising low modulus thermal interface materials
US7682690B2 (en) 2002-02-06 2010-03-23 Parker-Hannifin Corporation Thermal management materials having a phase change dispersion
US6946190B2 (en) 2002-02-06 2005-09-20 Parker-Hannifin Corporation Thermal management materials
US6926955B2 (en) 2002-02-08 2005-08-09 Intel Corporation Phase change material containing fusible particles as thermally conductive filler
US7846778B2 (en) 2002-02-08 2010-12-07 Intel Corporation Integrated heat spreader, heat sink or heat pipe with pre-attached phase change thermal interface material and method of making an electronic assembly
US20040149587A1 (en) 2002-02-15 2004-08-05 George Hradil Electroplating solution containing organic acid complexing agent
US20030159938A1 (en) 2002-02-15 2003-08-28 George Hradil Electroplating solution containing organic acid complexing agent
EP1342817A3 (en) 2002-03-05 2006-05-24 Shipley Co. L.L.C. Limiting the loss of tin through oxidation in tin or tin alloy electroplating bath solutions
US6913686B2 (en) 2002-12-10 2005-07-05 Advanced Technology Materials, Inc. Methods for analyzing solder plating solutions
US6815486B2 (en) 2002-04-12 2004-11-09 Dow Corning Corporation Thermally conductive phase change materials and methods for their preparation and use
US20030203181A1 (en) 2002-04-29 2003-10-30 International Business Machines Corporation Interstitial material with enhanced thermal conductance for semiconductor device packaging
US7147367B2 (en) 2002-06-11 2006-12-12 Saint-Gobain Performance Plastics Corporation Thermal interface material with low melting alloy
US20030230403A1 (en) 2002-06-14 2003-12-18 Webb Brent J. Conductive thermal interface and compound
US6791839B2 (en) 2002-06-25 2004-09-14 Dow Corning Corporation Thermal interface materials and methods for their preparation and use
EP1531985A4 (en) 2002-07-15 2008-03-19 Honeywell Int Inc THERMAL CONNECTING AND BORDER AREA SYSTEMS, MANUFACTURING METHOD AND USES THEREOF
JP4016326B2 (ja) 2002-08-02 2007-12-05 石原薬品株式会社 無電解スズメッキ浴
US6657297B1 (en) 2002-08-15 2003-12-02 The Bergquist Company Flexible surface layer film for delivery of highly filled or low cross-linked thermally conductive interface pads
US6908682B2 (en) 2002-09-12 2005-06-21 3M Innovative Properties Company Photocured silicone sealant having improved adhesion to plastic
US6783692B2 (en) 2002-10-17 2004-08-31 Dow Corning Corporation Heat softening thermally conductive compositions and methods for their preparation
CN1296994C (zh) 2002-11-14 2007-01-24 清华大学 一种热界面材料及其制造方法
FR2848215B1 (fr) 2002-12-04 2006-08-04 Rhodia Chimie Sa Composition elastomere silicone, adhesive, monocomposante et reticulable par polyaddition
US7326042B2 (en) 2002-12-24 2008-02-05 Bostik Findley, Inc. Apparatus for packaging hot melt adhesives using a mold and carrier
JP4288469B2 (ja) 2003-03-12 2009-07-01 石原薬品株式会社 銅侵食防止用の無電解スズメッキ浴、及び銅侵食防止方法
US20070164424A1 (en) 2003-04-02 2007-07-19 Nancy Dean Thermal interconnect and interface systems, methods of production and uses thereof
US7013965B2 (en) 2003-04-29 2006-03-21 General Electric Company Organic matrices containing nanomaterials to enhance bulk thermal conductivity
US7229683B2 (en) 2003-05-30 2007-06-12 3M Innovative Properties Company Thermal interface materials and method of making thermal interface materials
US7744991B2 (en) 2003-05-30 2010-06-29 3M Innovative Properties Company Thermally conducting foam interface materials
TWI251320B (en) 2003-07-04 2006-03-11 Fuji Polymer Ind Thermal conductive composition, a heat-dissipating putty sheet and heat-dissipating structure using the same
KR100981571B1 (ko) 2003-07-26 2010-09-10 삼성전자주식회사 다중 입력 다중 출력 적응 안테나 어레이 방식을 사용하는이동 통신 시스템에서 신호 송수신 시스템 및 방법
US6985690B2 (en) 2003-07-31 2006-01-10 Xerox Corporation Fuser and fixing members containing PEI-PDMS block copolymers
US6874573B2 (en) 2003-07-31 2005-04-05 National Starch And Chemical Investment Holding Corporation Thermal interface material
JP2005060822A (ja) 2003-08-08 2005-03-10 Rohm & Haas Electronic Materials Llc 複合基体の電気メッキ
US20050049350A1 (en) 2003-08-25 2005-03-03 Sandeep Tonapi Thin bond-line silicone adhesive composition and method for preparing the same
US8039961B2 (en) 2003-08-25 2011-10-18 Samsung Electronics Co., Ltd. Composite carbon nanotube-based structures and methods for removing heat from solid-state devices
US7550097B2 (en) 2003-09-03 2009-06-23 Momentive Performance Materials, Inc. Thermal conductive material utilizing electrically conductive nanoparticles
US20050072334A1 (en) 2003-10-07 2005-04-07 Saint-Gobain Performance Plastics, Inc. Thermal interface material
WO2005047378A2 (en) 2003-11-05 2005-05-26 Dow Corning Corporation Thermally conductive grease and methods and devices in which said grease is used
US7306823B2 (en) * 2004-09-18 2007-12-11 Nanosolar, Inc. Coated nanoparticles and quantum dots for solution-based fabrication of photovoltaic cells
US20050228097A1 (en) 2004-03-30 2005-10-13 General Electric Company Thermally conductive compositions and methods of making thereof
WO2005111146A1 (ja) * 2004-05-17 2005-11-24 Techno Polymer Co., Ltd. 熱伝導性樹脂組成物及びその製造方法並びにハウジング
EP1751796A1 (en) 2004-05-20 2007-02-14 General Electric Company, (a New York Corporation) Organic matrices containing nanomaterials to enhance bulk thermal conductivity
US20050287362A1 (en) 2004-06-23 2005-12-29 3M Innovative Properties Company Halogen free tapes & method of making same
US20080302064A1 (en) 2004-07-13 2008-12-11 Rauch Robert A Novel Packaging Solution for Highly Filled Phase-Change Thermal Interface Material
JP5305656B2 (ja) 2004-08-23 2013-10-02 モーメンティブ・パフォーマンス・マテリアルズ・インク 熱伝導性組成物およびその作製方法
EP1786859B1 (en) 2004-08-31 2011-06-08 Basf Se Stabilization of organic materials
US7850870B2 (en) 2004-10-28 2010-12-14 Dow Corning Corporation Conductive curable compositions
US7328547B2 (en) 2004-10-29 2008-02-12 Bostik, Inc. Process for packaging plastic materials like hot melt adhesives
EP1846480B1 (en) 2005-02-01 2008-10-22 Dow Corning Corporation Curable coating compositions
US7241707B2 (en) 2005-02-17 2007-07-10 Intel Corporation Layered films formed by controlled phase segregation
CN100543103C (zh) 2005-03-19 2009-09-23 清华大学 热界面材料及其制备方法
US20060228542A1 (en) 2005-04-08 2006-10-12 Saint-Gobain Performance Plastics Corporation Thermal interface material having spheroidal particulate filler
CN100404242C (zh) 2005-04-14 2008-07-23 清华大学 热界面材料及其制造方法
US20060260948A2 (en) 2005-04-14 2006-11-23 Enthone Inc. Method for electrodeposition of bronzes
WO2006117920A1 (ja) 2005-04-28 2006-11-09 Meltex Inc. スズめっき液、そのスズめっき液を用いためっき方法、スズめっき液調整方法及びそのスズめっき液を用いてスズめっき層を形成したチップ部品
US20060264566A1 (en) 2005-05-19 2006-11-23 Wacker Chemical Corporation HCR room temperature curable rubber composition
JP2007002002A (ja) * 2005-06-21 2007-01-11 Idemitsu Kosan Co Ltd 伝熱性樹脂組成物
US20070051773A1 (en) 2005-09-02 2007-03-08 Ruchert Brian D Thermal interface materials, methods of preparation thereof and their applications
US20070097651A1 (en) 2005-11-01 2007-05-03 Techfilm, Llc Thermal interface material with multiple size distribution thermally conductive fillers
CN1970666A (zh) 2005-11-24 2007-05-30 鸿富锦精密工业（深圳）有限公司 导热胶
CN1978582A (zh) 2005-12-09 2007-06-13 富准精密工业(深圳)有限公司 导热膏及使用该导热膏的电子装置
US7465605B2 (en) 2005-12-14 2008-12-16 Intel Corporation In-situ functionalization of carbon nanotubes
US7964542B2 (en) * 2006-01-12 2011-06-21 International Business Machines Corporation Enhanced thermo-oxidative stability thermal interface compositions and use thereof in microelectronics assembly
US20070179232A1 (en) 2006-01-30 2007-08-02 National Starch And Chemical Investment Holding Corporation Thermal Interface Material
US7955900B2 (en) 2006-03-31 2011-06-07 Intel Corporation Coated thermal interface in integrated circuit die
TWI313695B (en) 2006-04-20 2009-08-21 Taiwan Textile Res Inst Melted-spinning grains containing thermal-stable phase-change polymer and preparation method thereof
US20080023665A1 (en) 2006-07-25 2008-01-31 Weiser Martin W Thermal interconnect and interface materials, methods of production and uses thereof
US20100197533A1 (en) 2006-09-05 2010-08-05 3M Innovative Properties Company Thermally conductive grease
JP2008063412A (ja) 2006-09-06 2008-03-21 Showa Denko Kk 熱伝導性樹脂組成物およびシート
JP5231236B2 (ja) 2006-10-17 2013-07-10 電気化学工業株式会社 グリース
US7554793B2 (en) 2006-11-16 2009-06-30 Kemet Electronics Corporation Low temperature curable conductive adhesive and capacitors formed thereby
US8431647B2 (en) 2006-12-27 2013-04-30 Bluestar Silicones France Sas Adhesive silicone compositions and adhesive bonding/seaming therewith
EP2115065B1 (en) 2007-02-20 2016-05-11 Dow Corning Corporation Filler treating agents based on hydrogen bonding polyorganosiloxanes
CN101067030A (zh) 2007-03-30 2007-11-07 广东华南精细化工研究院有限公司 新型聚烯烃高效耐热氧化复合型抗氧剂及其生产工艺和应用
CN101652459A (zh) 2007-04-02 2010-02-17 3M创新有限公司 热脂制品以及方法
US8431655B2 (en) 2007-04-09 2013-04-30 Designer Molecules, Inc. Curatives for epoxy compositions
GB0707176D0 (en) 2007-04-16 2007-05-23 Dow Corning Hydrosilylation curable compositions
US7462294B2 (en) 2007-04-25 2008-12-09 International Business Machines Corporation Enhanced thermal conducting formulations
WO2008147825A2 (en) 2007-05-22 2008-12-04 Honeywell International Inc. Thermal interconnect and interface materials, methods of production and uses thereof
FR2919615A1 (fr) 2007-08-02 2009-02-06 Bluestar Silicones France Soc Composition elastomere silicone adhesive
JP5269366B2 (ja) 2007-08-22 2013-08-21 コスモ石油ルブリカンツ株式会社 耐熱型熱伝導性グリース
KR20150043545A (ko) 2007-08-31 2015-04-22 캐보트 코포레이션 열 계면 물질
US8586650B2 (en) 2007-09-14 2013-11-19 Henkel US IP LLC Thermally conductive composition
JP2009102577A (ja) 2007-10-25 2009-05-14 Polymatech Co Ltd 熱伝導性組成物
US20090111925A1 (en) 2007-10-31 2009-04-30 Burnham Kikue S Thermal interface materials, methods of production and uses thereof
US8445102B2 (en) 2007-11-05 2013-05-21 Laird Technologies, Inc. Thermal interface material with thin transfer film or metallization
US9795059B2 (en) 2007-11-05 2017-10-17 Laird Technologies, Inc. Thermal interface materials with thin film or metallization
JP5137538B2 (ja) 2007-11-28 2013-02-06 リンテック株式会社 粘接着剤組成物、粘接着シートおよび半導体装置の製造方法
JP2009138036A (ja) 2007-12-04 2009-06-25 Momentive Performance Materials Japan Kk 熱伝導性シリコーングリース組成物
US8076773B2 (en) 2007-12-26 2011-12-13 The Bergquist Company Thermal interface with non-tacky surface
CN101910350B (zh) * 2008-01-16 2013-01-16 日立化成工业株式会社 感光性粘接剂组合物、膜状粘接剂、粘接片、粘接剂图案、带有粘接剂层的半导体晶片、半导体装置及半导体装置的制造方法
US20090184283A1 (en) 2008-01-18 2009-07-23 Deborah Duen Ling Chung Antioxidants for phase change ability and thermal stability enhancement
US20090215225A1 (en) 2008-02-24 2009-08-27 Advanced Technology Materials, Inc. Tellurium compounds useful for deposition of tellurium containing materials
US8632879B2 (en) 2008-04-25 2014-01-21 The University Of Kentucky Research Foundation Lightweight thermal management material for enhancement of through-thickness thermal conductivity
US10358535B2 (en) 2008-04-25 2019-07-23 The University Of Kentucky Research Foundation Thermal interface material
WO2009136508A1 (ja) 2008-05-08 2009-11-12 富士高分子工業株式会社 熱伝導性樹脂組成物
JP5607298B2 (ja) 2008-07-29 2014-10-15 株式会社カネカ 熱伝導材料
US8394746B2 (en) 2008-08-22 2013-03-12 Exxonmobil Research And Engineering Company Low sulfur and low metal additive formulations for high performance industrial oils
EP2194165A1 (en) 2008-10-21 2010-06-09 Rohm and Haas Electronic Materials LLC Method for replenishing tin and its alloying metals in electrolyte solutions
US20100129648A1 (en) 2008-11-26 2010-05-27 Jun Xu Electronic packaging and heat sink bonding enhancements, methods of production and uses thereof
US8138239B2 (en) 2008-12-23 2012-03-20 Intel Corporation Polymer thermal interface materials
JP5390202B2 (ja) 2009-01-21 2014-01-15 株式会社カネカ 放熱構造体
US7816785B2 (en) 2009-01-22 2010-10-19 International Business Machines Corporation Low compressive force, non-silicone, high thermal conducting formulation for thermal interface material and package
KR20110123763A (ko) 2009-02-04 2011-11-15 다우 코닝 코포레이션 비-무작위적 공중합체의 제조 방법
US8618211B2 (en) 2009-03-16 2013-12-31 Dow Corning Corporation Thermally conductive grease and methods and devices in which said grease is used
JP2010248277A (ja) 2009-04-10 2010-11-04 Panasonic Corp 熱伝導性樹脂ペーストおよびそれを用いた光ディスク装置
WO2010129647A1 (en) 2009-05-05 2010-11-11 Parker Hannifin Corporation Thermally conductive foam product
JP5577553B2 (ja) * 2009-05-27 2014-08-27 協同油脂株式会社 放熱コンパウンド組成物
US8081468B2 (en) 2009-06-17 2011-12-20 Laird Technologies, Inc. Memory modules including compliant multilayered thermally-conductive interface assemblies
CN102804367A (zh) 2009-06-19 2012-11-28 道康宁公司 离聚硅酮热塑性弹性体在电子器件中的用途
US8535787B1 (en) 2009-06-29 2013-09-17 Juniper Networks, Inc. Heat sinks having a thermal interface for cooling electronic devices
JP5463116B2 (ja) 2009-10-14 2014-04-09 電気化学工業株式会社 熱伝導性材料
US9593209B2 (en) 2009-10-22 2017-03-14 Dow Corning Corporation Process for preparing clustered functional polyorganosiloxanes, and methods for their use
US8223498B2 (en) 2009-11-11 2012-07-17 Juniper Networks, Inc. Thermal interface members for removable electronic devices
JP5318733B2 (ja) 2009-11-26 2013-10-16 コスモ石油ルブリカンツ株式会社 熱伝導性グリース
GB2508320B (en) 2009-12-09 2014-07-23 Intel Corp Polymer thermal interface materials
TWI475103B (zh) 2009-12-15 2015-03-01 Ind Tech Res Inst 散熱結構
US20110192564A1 (en) 2009-12-21 2011-08-11 Saint-Gobain Performance Plastics Corporation Thermally conductive foam material
KR101023241B1 (ko) * 2009-12-28 2011-03-21 제일모직주식회사 반도체용 접착제 조성물 및 이를 이용한 접착 필름
CN101735619B (zh) 2009-12-28 2011-11-09 华南理工大学 一种无卤阻燃导热有机硅电子灌封胶及其制备方法
JP2011165792A (ja) 2010-02-08 2011-08-25 Teijin Dupont Films Japan Ltd 放熱性二軸延伸フィルム
US9771508B2 (en) 2010-02-23 2017-09-26 Laird Technologies, Inc. Thermal interface materials including thermally reversible gels
US9260645B2 (en) 2010-02-23 2016-02-16 Laird Technologies, Inc. Thermal interface materials including thermally reversible gels
JP5738274B2 (ja) 2010-03-15 2015-06-24 日本化薬株式会社 耐熱用接着剤
WO2011137360A1 (en) 2010-04-30 2011-11-03 Indium Corporation Thermal interface materials with good reliability
US8308861B2 (en) 2010-05-13 2012-11-13 E I Du Pont De Nemours And Company Phase change material compositions
US8647752B2 (en) 2010-06-16 2014-02-11 Laird Technologies, Inc. Thermal interface material assemblies, and related methods
CN102134474B (zh) 2010-12-29 2013-10-02 深圳市优宝惠新材料科技有限公司 导热硅脂组合物
US8917510B2 (en) 2011-01-14 2014-12-23 International Business Machines Corporation Reversibly adhesive thermal interface material
WO2012102852A1 (en) 2011-01-26 2012-08-02 Dow Corning Corporation High temperature stable thermally conductive materials
US8277774B2 (en) 2011-01-27 2012-10-02 Honeywell International Method for the preparation of high purity stannous oxide
US8735574B2 (en) 2011-03-30 2014-05-27 Infacare Pharmaceutical Corporation Methods for synthesizing metal mesoporphyrins
US20120285673A1 (en) 2011-05-11 2012-11-15 Georgia Tech Research Corporation Nanostructured composite polymer thermal/electrical interface material and method for making the same
JP2012241063A (ja) * 2011-05-17 2012-12-10 Nitto Denko Corp 半導体装置製造用の接着シート
CN103748171B (zh) * 2011-08-10 2016-03-16 株式会社艾迪科 含硅固化性组合物及其固化物
JP5687167B2 (ja) 2011-09-27 2015-03-18 コスモ石油ルブリカンツ株式会社 耐熱型熱伝導性グリース
CN103102689B (zh) 2011-11-15 2015-04-01 佛山市金戈消防材料有限公司 一种高导热有机硅灌封胶组合物及其应用
EP2780775A4 (en) 2011-11-15 2015-08-26 Henkel IP & Holding GmbH ELECTRONIC DEVICES ASSEMBLED WITH THERMAL INSULATION LAYERS
CN103131138B (zh) 2011-11-23 2016-05-11 合肥杰事杰新材料股份有限公司 一种热塑性聚酯组合物及其制备方法
CN103254647A (zh) 2012-02-20 2013-08-21 深圳德邦界面材料有限公司 一种导热缝隙界面材料及其制备方法
CN102627943A (zh) 2012-04-11 2012-08-08 北京化工大学常州先进材料研究院 一种湿气/紫外光双固化有机硅胶粘剂
JP5783128B2 (ja) 2012-04-24 2015-09-24 信越化学工業株式会社 加熱硬化型熱伝導性シリコーングリース組成物
US8937384B2 (en) 2012-04-25 2015-01-20 Qualcomm Incorporated Thermal management of integrated circuits using phase change material and heat spreaders
TWI598385B (zh) 2012-05-10 2017-09-11 國立清華大學 絕緣化熱介面材料
JP2014003152A (ja) 2012-06-18 2014-01-09 Dow Corning Toray Co Ltd サーマルインターフェース材の形成方法および放熱構造体
WO2014007119A1 (ja) 2012-07-04 2014-01-09 Dic株式会社 ヒートシール剤、それを用いた積層体及び太陽電池モジュール
US8587945B1 (en) 2012-07-27 2013-11-19 Outlast Technologies Llc Systems structures and materials for electronic device cooling
JP6440615B2 (ja) 2012-07-30 2018-12-19 ダウ シリコーンズ コーポレーション 熱伝導性縮合反応硬化型ポリオルガノシロキサン組成物、並びに該組成物の調製及び使用のための方法
GB201220099D0 (en) 2012-09-19 2012-12-26 Dow Corning Production of blend of polyolefin and organopolysiloxane
JP5944306B2 (ja) 2012-12-21 2016-07-05 コスモ石油ルブリカンツ株式会社 高熱伝導性グリース
CN103087389B (zh) 2013-01-31 2015-06-10 合肥工业大学 一种高导热高韧性复合材料及其制备方法
CN105102575B (zh) 2013-02-11 2017-06-20 道康宁公司 用于形成导热热自由基固化有机硅组合物的原位方法
JP5372270B1 (ja) 2013-02-19 2013-12-18 ビッグテクノス株式会社 熱放射性フィルム及び熱放射性粘着テープ
JP6263042B2 (ja) 2013-02-28 2018-01-17 コスモ石油ルブリカンツ株式会社 基油拡散防止性能を有する熱伝導性グリース
CN103102552A (zh) 2013-03-12 2013-05-15 泰山体育产业集团有限公司 一种相变保温聚烯烃泡沫材料及其制备方法
WO2014160067A1 (en) 2013-03-14 2014-10-02 Dow Corning Corporation Thermally curable silicone compositions as temporary bonding adhesives
US9070660B2 (en) 2013-03-15 2015-06-30 Intel Corporation Polymer thermal interface material having enhanced thermal conductivity
CN103214848B (zh) 2013-04-28 2015-07-22 深圳市新亚新材料有限公司 一种用于cpu散热的相变导热硅脂组合物及其制备方法
CN103333447A (zh) 2013-06-26 2013-10-02 苏州天脉导热科技有限公司 一种相变化热界面材料及其制备方法
KR20160032009A (ko) * 2013-07-16 2016-03-23 히타치가세이가부시끼가이샤 감광성 수지 조성물, 필름상 접착제, 접착 시트, 접착제 패턴, 접착제층이 형성된 반도체 웨이퍼 및 반도체 장치
CN103409116B (zh) 2013-07-30 2015-07-22 深圳德邦界面材料有限公司 一种绝缘增强型导热界面材料及其制备方法
CN103436027B (zh) 2013-09-09 2015-10-28 北京化工大学 一种导热电绝缘硅橡胶热界面材料及其制备方法
US20150125646A1 (en) 2013-11-05 2015-05-07 Espci Innov Self-Healing Thermally Conductive Polymer Materials
WO2015068551A1 (ja) * 2013-11-08 2015-05-14 リンテック株式会社 保護膜形成用組成物、保護膜形成用シート、及び保護膜付きチップ
JP2015097134A (ja) * 2013-11-15 2015-05-21 日東電工株式会社 回路付サスペンション基板
CN103756631B (zh) 2013-11-28 2015-06-03 常熟市恒信粘胶有限公司 双组份自粘性加成型阻燃导热室温固化有机硅灌封胶
KR20160094385A (ko) 2013-12-05 2016-08-09 허니웰 인터내셔날 인코포레이티드 조절된 pH를 갖는 주석(II) 메탄술포네이트 용액
CN104152103B (zh) 2013-12-23 2016-08-17 郑州中原应用技术研究开发有限公司 一种加成型双组分导热灌封胶及其制备方法
CN103709757A (zh) 2013-12-30 2014-04-09 无锡中石油润滑脂有限责任公司 一种绝缘导热硅脂及其制备方法
CN104449550B (zh) 2013-12-31 2016-08-17 弗洛里光电材料（苏州）有限公司 有机硅组合物及其应用
CN103773322A (zh) 2014-02-08 2014-05-07 中国电子科技集团公司第三十三研究所 一种相变微胶囊导热材料及其制备方法
CN105980512A (zh) 2014-02-13 2016-09-28 霍尼韦尔国际公司 可压缩热界面材料
CN103849356A (zh) 2014-03-20 2014-06-11 中国电子科技集团公司第三十三研究所 一种电气绝缘相变导热材料及其制备方法
CN103865271B (zh) 2014-03-20 2017-04-05 北京化工大学 一种纳米杂化材料改性的有机硅导热电子灌封胶的制备方法
JP6348434B2 (ja) 2014-03-28 2018-06-27 信越化学工業株式会社 シリコーン粘着剤組成物、その製造法及び粘着フィルム
US20150334871A1 (en) 2014-05-19 2015-11-19 Laird Technologies, Inc. Thermal interface materials with thin film sealants
CN104140678B (zh) 2014-06-29 2017-04-12 惠州市永卓科技有限公司 一种具有自粘性的导热硅脂及其制备方法
CN104098914B (zh) 2014-07-02 2017-09-29 深圳市安品有机硅材料有限公司 有机硅导热界面材料
MX2016016984A (es) 2014-07-07 2017-05-03 Honeywell Int Inc Material de interconexion termica con depurador ionico.
CN106605310B (zh) 2014-09-01 2019-11-01 株式会社钟化 汽车用led灯散热器
BR112017004672B1 (pt) 2014-09-22 2022-01-25 Dow Global Technologies Llc Composição de graxa térmica e processo para preparar uma composição de graxa térmica
CN107078200B (zh) 2014-10-23 2018-12-07 株式会社钟化 Led灯散热器
WO2016063931A1 (ja) * 2014-10-24 2016-04-28 ナミックス株式会社 導電性組成物及びそれを用いた電子部品
CN112080258A (zh) 2014-12-05 2020-12-15 霍尼韦尔国际公司 具有低热阻的高性能热界面材料
CN104497574A (zh) 2014-12-10 2015-04-08 深圳市博恩实业有限公司 多功能有机硅热界面材料
CN104513487B (zh) 2014-12-10 2017-05-10 东莞兆舜有机硅科技股份有限公司 一种双组分导热硅凝胶及其用途
CN107207858B (zh) 2014-12-25 2021-02-05 积水保力马科技株式会社 硅组合物
US10431858B2 (en) 2015-02-04 2019-10-01 Global Web Horizons, Llc Systems, structures and materials for electrochemical device thermal management
CN104804705A (zh) 2015-05-06 2015-07-29 成都拓利化工实业有限公司 低释气量加成型无卤阻燃导热有机硅灌封胶及其制备方法
CN104861661A (zh) 2015-05-13 2015-08-26 浙江中天氟硅材料有限公司 一种低密度导热灌封胶及其制备方法
EP3305519B1 (en) 2015-06-03 2021-06-30 Kaneka Corporation Metal resin composite
CN108026375B (zh) 2015-09-09 2021-05-11 株式会社钟化 导热性树脂组合物
CN105111750A (zh) 2015-09-09 2015-12-02 蓝星（成都）新材料有限公司 一种led灌封用有机硅密封胶
JP6497291B2 (ja) 2015-10-14 2019-04-10 信越化学工業株式会社 絶縁放熱シート
CN105349113A (zh) 2015-10-14 2016-02-24 文雪烽 一种导热界面材料
US10312177B2 (en) 2015-11-17 2019-06-04 Honeywell International Inc. Thermal interface materials including a coloring agent
CN105419339A (zh) 2015-12-01 2016-03-23 江苏晶河电子科技有限公司 一种高性能硅基导热凝胶及其制备方法
CN105670555A (zh) 2016-01-22 2016-06-15 何挺 一种高导热型的有机硅灌封胶
CN109072051B (zh) 2016-03-08 2023-12-26 霍尼韦尔国际公司 相变材料
CN105925243A (zh) 2016-05-23 2016-09-07 东莞珂洛赫慕电子材料科技有限公司 一种室温固化型高导热柔性硅胶
CN105838322A (zh) 2016-05-26 2016-08-10 张学健 一种新型有机硅灌封胶
US20180030328A1 (en) 2016-07-26 2018-02-01 Honeywell International Inc. Gel-type thermal interface material
US10501671B2 (en) 2016-07-26 2019-12-10 Honeywell International Inc. Gel-type thermal interface material
PT3839005T (pt) 2016-10-12 2023-09-07 Honeywell Int Inc Materiais de interface térmica incluindo agente corante
JP7129181B2 (ja) 2017-03-17 2022-09-01 旭化成株式会社 ヘッドマウントディスプレイ用部材

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110187009A1 (en) * 2008-08-04 2011-08-04 Takashi Masuko Adhesive composition, film-like adhesive, adhesive sheet and semiconductor device
CN101445627A (zh) * 2008-12-11 2009-06-03 上海交通大学 高压直流电缆绝缘材料及其制备方法
CN102341474A (zh) * 2009-03-02 2012-02-01 霍尼韦尔国际公司 热界面材料及制造和使用它的方法
US20130199724A1 (en) * 2009-10-09 2013-08-08 Designer Molecules, Inc. Curatives for epoxy compositions

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106977923A (zh) * 2017-03-31 2017-07-25 广东工业大学 一种三氮烯混合物及其制备方法
CN111378402A (zh) * 2020-04-10 2020-07-07 山东宝龙达实业集团有限公司 一种羟基清除剂的制备方法及其应用
CN111378402B (zh) * 2020-04-10 2021-01-12 山东宝龙达实业集团有限公司 一种羟基清除剂的制备方法及其应用

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