US20190048245A1 - Thermal interface material with ion scavenger - Google Patents
Thermal interface material with ion scavenger Download PDFInfo
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- US20190048245A1 US20190048245A1 US16/163,255 US201816163255A US2019048245A1 US 20190048245 A1 US20190048245 A1 US 20190048245A1 US 201816163255 A US201816163255 A US 201816163255A US 2019048245 A1 US2019048245 A1 US 2019048245A1
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- SSADPHQCUURWSW-UHFFFAOYSA-N CC1=CC(C(C)(C)C)=C(OP2OCC3(CO2)COP(OC2=C(C(C)(C)C)C=C(C)C=C2C(C)(C)C)OC3)C(C(C)(C)C)=C1 Chemical compound CC1=CC(C(C)(C)C)=C(OP2OCC3(CO2)COP(OC2=C(C(C)(C)C)C=C(C)C=C2C(C)(C)C)OC3)C(C(C)(C)C)=C1 SSADPHQCUURWSW-UHFFFAOYSA-N 0.000 description 3
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Definitions
- the present disclosure relates generally to thermal interface materials, and more particularly to thermal interface materials that include an ion scavenger.
- Thermal interface materials are widely used to dissipate heat from electronic components, such as central processing units, video graphics arrays, servers, game consoles, smart phones, LED boards, and the like. Thermal interface materials are typically used to transfer excess heat from the electronic component to a heat spreader, such as a heat sink.
- the electronics package structure 10 illustratively includes a heat generating component, such as an electronic chip 12 , and one or more heat dissipating components, such as a heat spreader 14 , and a heat sink 16 .
- Illustrative heat spreaders 14 and heat sinks comprise a metal, metal alloy, or metal-plated substrate, such as copper, copper alloy, aluminum, aluminum alloy, or nickel-plated copper.
- TIM materials such as TIM 18 and TIM 20 , provide a thermal connection between the heat generating component and the one or more heat dissipating components.
- Electronics package structure 10 includes a first TIM 18 connecting the electronic chip 12 and heat spreader 14 .
- TIM 18 is typically referred to as a “TIM 1 ”.
- Electronics package structure 10 includes a second TIM 20 connecting the heat spreader 14 and heat sink 16 .
- TIM 18 is typically referred to as a “TIM 2 ”.
- electronics package structure 10 does not include a heat spreader 14 , and a TIM (not shown) connects the electronic chip 12 directly to the heat sink 16 .
- a TIM connecting the electronic chip 12 directly to the heat sink 16 is typically referred to as a TIM 1 . 5 .
- Thermal interface materials include thermal grease, grease-like materials, elastomer tapes, and phase change materials.
- Traditional thermal interface materials include components such as gap pads and thermal pads.
- thermal interface materials are disclosed in the following patents and applications, the disclosures of which are hereby incorporated by reference in their entirety: U.S. Pat. No. 6,238,596, U.S. Pat. No. 6,451,422, U.S. Pat. No. 6,605,238, U.S. Pat. No. 6,673,434, U.S. Pat. No. 6,706,219, U.S. Pat. No. 6,797,382, U.S. Pat. No. 6,811,725, U.S. Pat. No. 7,172,711, U.S. Pat. No. 7,244,491, U.S. Pat. No. 7,867,609, U.S. 2007/0051773, U.S. 2008/0044670, U.S. 2009/0111925, U.S. 2010/0129648, and U.S. 2011/0308782.
- Degradation of thermal interface materials typically occurs through polymer chain scission, such as illustrated in FIG. 2A .
- the initiation energy produces the initiation reaction RH ⁇ R.+H. to form the radical R.
- This radical combines with an oxygen molecule to form the peroxide radical ROO.
- the peroxide radical can bond to a proton transferred from another R group to form the peroxide ROOH, as well as a new R. radical, which can combine with a new oxygen molecule.
- the branching reaction ROOH ⁇ RO.+HO. proceeds to form both a RO. radical and a HO. radical.
- the RO. and HO. are involved in scission of the remaining polymer chain, as well as embrittlement of the thermal interface material through unwanted crosslinking.
- the radical initiation reaction speed depends on provision of the initiation energy to produce the R. radical, as well as contaminants in the material.
- both the initiation reaction and the branching reaction are relatively slow due to relatively high activation energies involved in each reaction.
- each of the initiation reaction and the branching reaction can be catalyzed by a metal ion.
- These metal ion catalyzed reactions have relatively low activation energies compared to the uncatalyzed reactions illustrated in FIG. 2A . This results in the generation of more radicals than the uncatalyzed cycle of FIG. 2A , which leads to faster degradation of the thermal interface material.
- At least one surface of a TIM material may be in direct contact with a metal surface, such as heat spreader 14 or heat sink 16 .
- a metal surface such as heat spreader 14 or heat sink 16 .
- Such metal surfaces may provide metal ions to catalyze the initiation and branching reactions, such as from metal oxides that may form on the surface.
- copper ions may interact with a polymer comprising the TIM, particularly in the presence of heat, to form free radicals in the polymer that initiation chain scission that degrades the polymer during service.
- the present disclosure provides thermal interface materials that are useful in transferring heat from heat generating electronic devices, such as computer chips, to heat dissipating structures, such as heat spreaders and heat sinks.
- the thermal interface material includes at least one polymer, at least one thermally conductive filler, and at least one ion scavenger.
- the ion scavenger is a complexing agent selected from the group consisting of: nitrogen containing complexing agents, phosphorus containing complexing agents, hydroxyl carboxylic acid based complexing agents, and combinations of the foregoing.
- the ion scavenger is selected from the group consisting of: an acid amide compound, a triazole compound, a tetrazole compound, a triazene compound, an oxamide compounds, a malonamide compound, and combinations of the foregoing.
- the ion scavenger is an acid amide compound.
- the ion scavenger is selected from the group consisting of: decamethylenedicarboxylic acid disalicyloylhydrazide; 3-(N-salicyloyl)amino-1,2,4-triazole; 2′, 3-bis [[3-[3, 5-di-tert-butyl-4-hydroxyphenyl] propionic]]propionyl hydrazide, and combinations of the foregoing.
- the ion scavenger is a compound according to any of Formula I to Formula XI or combinations thereof:
- the thermal interface material comprises 0.1 wt. % to 5 wt. % of the ion scavenger, based on the total weight of the thermal interface material. In a more particular embodiment, the thermal interface material comprises 0.5 wt. % to 1 wt. % of the ion scavenger, based on the total weight of the thermal interface material.
- the thermal interface material further comprises at least one phase change material.
- the phase change material is a wax.
- the thermal interface material further comprises at least coupling agent.
- the coupling agent material is selected from the group consisting of: a titanate coupling agent, a zirconate coupling agent, and a silane coupling agent, and combinations of the foregoing.
- the coupling agent is a titanate coupling agent.
- the thermal interface material further comprises at least one crosslinker.
- the thermal interface material comprises: 5 wt. % to 10 wt. % of the at least one polymer; 50 wt. % to 95 wt. % of the at least one thermally conductive filler; and 0.1 wt. % to 5 wt. % of the ion scavenger, based on the total weight of the thermal interface material.
- the thermal interface material comprises: 2 wt. % to 5 wt. % of at least one wax; 0.1 to 0.5 wt. % of at least one antioxidant; 1 wt. % to 2 wt.
- the thermal interface material comprises: 2 wt. % to 5 wt. % of at least one wax; 0.1 to 0.5 wt. % of at least one antioxidant; 1 wt. % to 2 wt. % of at least one coupling agent; and 0.5 wt. % to 0.6 wt.
- the thermal interface material comprises 75 wt. % to 90 wt. % of the at least one thermally conductive filler, based on the total weight of the thermal interface material.
- the thermal interface material comprises: 1.5 wt. % to 2 wt. % of at least one wax; 0.1 to 1 wt. % of at least one antioxidant; and 0.5 wt. % to 1 wt. % of at least one coupling agent; wherein the thermal interface material comprises 85 wt. % to 95 wt. % of the at least one thermally conductive filler, based on the total weight of the thermal interface material.
- the thermal interface material further comprises 0.1 wt. % to 1 wt. % of at least one crosslinker.
- an electronic components includes a heat sink, an electronic chip, and a thermal interface material having a first surface layer and a second surface layer, the thermal interface material positioned between the heat sink and electronic chip, the thermal interface material including: at least one polymer; at least one thermally conductive filler; and at least one ion scavenger.
- the thermal interface material is according to any of the above embodiments.
- the first surface layer is in contact with a surface of the electronic chip and the second surface layer is in contact with the heat sink.
- the electronic component further comprises a heat spreader positioned between the heat sink and the electronic chip, wherein the first surface layer is in contact with a surface of the electronic chip and the second surface layer is in contact with the heat spreader.
- the electronic component further comprises a heat spreader positioned between the heat sink and the electronic chip, wherein the first surface layer is in contact with a surface of the heat spreader and the second surface layer is in contact with the heat sink.
- FIG. 1 schematically illustrates a typical electronics package structure
- FIG. 2A illustrates a typical degradation mechanism for a TIM
- FIG. 2B illustrates a metal-catalyzed degradation mechanism
- FIG. 3 illustrates an exemplary complexing reaction with an ion scavenger.
- the present invention relates to thermal interface materials (TIMs) useful in transferring heat away from electronic components.
- the TIM comprises a polymer matrix, at least one thermally conductive filler, and at least one ion scavenger.
- the TIM may optionally include one or more of the following components: coupling agent, antioxidant, phase change material, and other additives.
- an ion scavenger inhibits metal ion-induced free radical formation.
- the ion scavenger is believed to capture and bind metal ions in a complex such that the metal ions no longer have an empty electron orbit and are effectively disabled from initiation the formation of free radicals in the polymer.
- FIG. 3 An exemplary complexing reaction is illustrated in FIG. 3 .
- the ion scavenger illustratively a dihydrazide, reacts with a metal ion, illustratively copper oxide.
- the metal ion is attracted to one or more lone pairs of electrons on the ion scavenger.
- the attraction between the metal ion and lone pairs of electrons forms a complex, in which the metal ion no longer has an empty electron orbit and does not participate in the metal-catalyzed reactions of FIG. 2B .
- the inclusion of an ion scavenger in the thermal interface material inhibited degradation of the polymer to a surprising extent.
- the TIM includes a polymer, such as an elastomer.
- the polymer comprises a silicone rubber, a siloxane rubber, a siloxane copolymer, or other suitable silicone-containing rubber.
- the polymer comprises one or more hydrocarbon rubber compounds, including saturated or unsaturated hydrocarbon rubber compounds.
- Exemplary saturated rubbers include ethylene-propylene rubbers (EPR, EPDM), polyethylene/butylene, polyethylene-butylene-styrene, polyethylene-propylene-styrene, hydrogenated polyalkyldiene “mono-ols” (such as hydrogenated polybutadiene mono-ol, hydrogenated polypropadiene mono-ol, hydrogenated polypentadiene mono-ol), hydrogenated polyalkyldiene “diols” (such as hydrogenated polybutadiene diol, hydrogenated polypropadiene diol, hydrogenated polypentadiene diol) and hydrogenated polyisoprene, polyolefin elastomer, and blends thereof.
- the polymer is a hydrogenated polybutadiene mono-ol.
- Exemplary unsaturated rubbers include polybutadiene, polyisoprene, polystyrene-butadiene and blends thereof, or blends of saturated and unsaturated rubber compounds.
- the TIM may comprise the one or more polymers in an amount as little as 1 wt. %, 2 wt. %, 5 wt. %, 6 wt. %, 7 wt. %, 8 wt. %, as great as 10 wt. %, 20 wt. %, 25 wt. %, 50 wt. %, or greater, or within any range defined between any two of the foregoing values, based on the total weight of the TIM.
- the TIM includes one or more thermally conductive fillers.
- Exemplary thermally conductive fillers include metals, alloys, nonmetals, metal oxides and ceramics, and combinations thereof.
- the metals include, but are not limited to, aluminum, copper, silver, zinc, nickel, tin, indium, and lead.
- the nonmetal include, but are not limited to, carbon, graphite, carbon nanotubes, carbon fibers, graphenes, and silicon nitride.
- the metal oxide or ceramics include but not limited to alumina, aluminum nitride, boron nitride, zinc oxide, and tin oxide.
- the TIM may comprise the one or more thermally conductive fillers in an amount as little as 10 wt. %, 20 wt. %, 25 wt. %, 50 wt. %, as great as 75 wt. %, 80 wt. %, 85 wt. %, 90 wt. %, 95 wt. %, or within any range defined between any two of the foregoing values, based on the total weight of the TIM.
- the TIM includes one or more ion scavengers.
- exemplary ion scavengers include nitrogen containing complexing agents, phosphorous containing complexing agents, and hydroxyl carboxylic acid based complexing agents.
- the ion scavenger is selected from acid amide compounds, such as hydrazide or dihydrazide.
- the ion scavenger is selected from triazole compounds, tetrazole compounds, triazene compounds, oxamide comounds, or malonamide compounds.
- the ion scavenger is selected from decamethylenedicarboxylic acid disalicyloylhydrazide; 3-(N-salicyloyl)amino-1,2,4-triazole; and 2′, 3-bis [[3-[3, 5-di-tert-butyl-4-hydroxyphenyl] propionic]]propionyl hydrazide.
- the ion scavenger is a compound according to any of Formula I to Formula XI or combinations thereof:
- the TIM may comprise the one or more ion scavengers in an amount as little as 0.1 wt. %, 0.2 wt. %, 0.5 wt. %, 1 wt. % as great as 1.5 wt. %, 2 wt. %, 5 wt. %, 10 wt. %, or within any range defined between any two of the foregoing values, based on the total weight of the TIM.
- the TIM comprises one or more coupling agents.
- Exemplary coupling agents include organometallic compounds, such as titanate coupling agents or zircontate coupling agents, and organic compounds, such as silane coupling agents.
- Exemplary coupling agents include titanium IV 2,2 (bis 2-propenolatomethyl)butanolato, tris(dioctyl)pyrophosphato-O; zirconium IV 2,2 (bis 2-propenolatomethyl)butanolato, tris(diisooctyl)pyrophosphato-O; titanium IV 2-propanolato, tris(dioctyl)-pyrophosphato-O) adduct with 1 mole of diisooctyl phosphite; titanium IV bis(dioctyl)pyrophosphato-O, oxoethylenediolato, (Adduct), bis(dioctyl) (hydrogen)phosphite-O; titanium IV bis
- the TIM may comprise the one or more coupling agents in an amount as little as 0.1 wt. %, 0.5 wt. %, 0.67 wt. %, 0.75 wt. %, as great as 1 wt. %, 1.5 wt. %, 2 wt. %, 5 wt. %, 10 wt. %, or within any range defined between any two of the foregoing values, based on the total weight of the TIM.
- the TIM comprises one or more antioxidants.
- Exemplary antioxidants include phenol type, amine type antioxidants, or any other suitable type of antioxidant, or a combination thereof.
- the phenol or amine type antioxidant may also be a sterically hindered phenol or amine type antioxidant.
- Exemplary phenol type antioxidants include octadecyl 3-(3,5-di-(tert)-butyl-4-hydroxyphenyl) propionate.
- Exemplary amine type antioxidants include 2,6-di-tert-butyl-4-(4,6-bis(octylthio)-1,3,5-triazin-2-ylamino) phenol.
- Exemplary stearically hindered antioxidants include sterically hindered sulfur containing phenolic antioxidants.
- Exemplary antioxidants include the Irganox® antioxidants available from BASF.
- ion scavengers and antioxidants both reduce oxidative degradation of the TIM
- ion scavengers are believed to function by capturing and binding metal ions in a complex such that the metal ions no longer have a net charge and are effectively disabled from participating in the metal-catalyzed reactions of FIG. 2B .
- antioxidants are generally believed to function by transferring electrons to an oxidizing agent, such as the radicals of FIG. 2A .
- the TIM may comprise the one or more antioxidants in an amount as little as 0.05 wt. %, 0.1 wt. %, 0.5 wt. %, 1 wt. % as great as 1.5 wt. %, 2 wt. %, 5 wt. %, 10 wt. %, or within any range defined between any two of the foregoing values, based on the total weight of the TIM.
- the TIM comprises one or more phase change materials.
- a phase change material is a material having a melting point or melting point range at or below the operating temperature of a portion of an electronic device in which the TIM is to be used.
- An exemplary phase change material is a wax.
- Other exemplary phase change materials include low melting alloys, such as Wood's metal, Field's metal, or a metal or alloy having a melting point between about 20° C. and 90° C.
- the phase change material has a phase change temperature as low as 20° C., 30° C., 40° C., 45° C. 50° C., as high as 60° C., 70° C., 80° C., 90° C., 100° C., 110° C., or within any range defined between any two of the foregoing values.
- the phase change material has a phase change temperature as low as 30° C., 40° C., 45° C. as high as 50° C., 60° C., 70° C., or within any range defined between any two of the foregoing values.
- Exemplary waxes include polyethylene (PE) wax, paraffin wax, AC-1702, a polyethylene wax, AC-430, a copolymer of ethylene-vinyl acetate wax, and AC-6702, an oxidized polyethylene wax, each available from Honeywell International Inc., a polyethylene wax blended with polytetrafluoroethylene such as PEW-0602F wax available from Nanjing Tianshi New Material Technologies, TAC wax, available from The International Group, Inc., and RT44HC, available from Hangzhou Ruhr Tech.
- PE polyethylene
- paraffin wax AC-1702
- AC-430 a copolymer of ethylene-vinyl acetate wax
- AC-6702 an oxidized polyethylene wax
- the TIM may comprise the one or more phase change materials in an amount as little as 0.5 wt. %, 1 wt. %, 2 wt. %, 3 wt. %, 5 wt. %, 10 wt. %, as great as 20 wt. %, 25 wt. %, 50 wt. %, or greater, or within any range defined between any two of the foregoing values, based on the total weight of the TIM.
- the TIM comprises one or more additional additives.
- exemplary additives include crosslinkers, such as alkylated melamine formaldehyde resin, pigments, and solvents, such as iosparaffinic fluids.
- the TIM may comprise the one or more additives in an amount as little as 0.1 wt. %, 0.5 wt. %, 1 wt. % as great as 1.5 wt. %, 2 wt. %, 5 wt. %, 10 wt. %, or within any range defined between any two of the foregoing values, based on the total weight of the TIM.
- the TIM includes about 1 wt. % to about 25 wt. % polymer, about 50 wt. % to about 95 wt. % thermally conductive filler, and about 0.1 wt. % to about 5 wt. % ion scavenger.
- the ion scavenger is an acid amide compounds, such as hydrazide or dihydrazide.
- the ion scavenger is selected from decanedicarboxylic acid dietlythyl oyl hydrazide; 3-(N-salicyloyl)amino-1,2,4-triazole; and 2′, 3-bis [[3-[3, 5-di-tert-butyl-4-hydroxyphenyl] propionic]]propionyl hydrazide
- the TIM further includes about 1 wt. % to about 5 wt. % of at least one phase change material.
- the TIM includes about 0.1 wt. % to about 5 wt. % of at least one crosslinker.
- the TIM includes about 0.1 wt. % to about 5 wt. % of at least one coupling agent.
- the TIM includes about 0.1 wt. % to about 5 wt. % of at least one phase change material.
- a material thermal interface material including an ion scavenger has a resistance to degradation greater than a similarly formulated thermal interface material not including an ion scavenger.
- the resistance to degradation may be characterized by an Oxygen Induced Time (OIT) test, such as determined by ASTM D3859-07, the disclosures of which are hereby incorporated by reference in their entirety. Longer OIT times indicate better thermal stability.
- the OIT of a TIM including an ion scavenger is as little as 20% greater, 25% greater, 30% greater, 50% greater, 75% greater, 100% greater, as great as 150% greater, 200% greater, 300% greater, 375% greater, 400% greater, 500% greater, or more than the OIT of a similarly formulated TIM not including an ion scavenger, or within any range defined between an y two of the foregoing values.
- the OIT of a TIM including an ion scavenger is as little as 30 minutes, 45 minutes, 60 minutes, as great as 75 minutes, 90 minutes, 120 minutes, 150 minutes, or greater or within any range defined between an y two of the foregoing values.
- the OIT of a TIM in contact with a metal surface is as little as 15 minutes, 20 minutes, 30 minutes, 45 minutes, as great as 60 minutes, 75 minutes, 90 minutes, 120 minutes, 150 minutes, or greater or within any range defined between an y two of the foregoing values.
- the thermal interface material has a thermal impedance as little as 0.05° C. cm 2 /W, 0.08° C. cm 2 /W, 0.09° C. cm 2 /W, as high as 0.1° C. cm 2 /W, 0.5° C. cm 2 /W, 1° C. cm 2 /W, 2° C. cm 2 /W, or within any range defined between any two of the foregoing values.
- the thermal interface material has an unchanged thermal impedance and no visible degradation of the TIM after undergoing a Highly Accelerated Stress Test (HAST) conditioning at a temperature of 120° C., a pressure of 2 atmospheres, and a relative humidity of 85%.
- the for thermal impedance may be unchanged for as short as 90 hours, 120 hours, 150 hours, as long as 180 hours, 190 hours, 200 hours, or longer, or within any range defined between any two of the foregoing values.
- the thermal interface material has an unchanged thermal impedance and no visible degradation of the TIM after undergoing a baking test conditioning at a temperature of 150° C.
- the for thermal impedance may be unchanged for as short as 1000 hours, 1500 hours, 2000 hours, as long as 2200 hours, 2500 hours, 2800 hours, or longer, or within any range defined between any two of the foregoing values.
- the TIM is prepared by combining the individual components in a heated mixer and blending the composition together.
- the blended composition may then be baked.
- the TIM is baked at a temperature as low as 25° C., 50° C., 75° C., 80° C., as high as 100° C., 125° C., 150° C., 170° C., or within any range defined between any two of the foregoing values. In some exemplary embodiments, the TIM is baked for as little as 0.5 minutes, 1 minute, 30 minutes, 1 hour, 2 hours, as long as 8 hours, 12 hours, 24 hours, 36, hours, 48 hours, or within any range defined between any two of the foregoing values. An exemplary baking condition is 80° C. for 30 minutes.
- the thermal interface material including an ion scavenger is positioned as a TIM 1 between an electronic component 12 and a heat spreader 14 , as indicated by TIM 18 .
- the thermal interface material including an ion scavenger is positioned as a TIM 2 between an a heat spreader 14 and a heat sink 16 , as indicated by TIM 20 .
- the thermal interface material including an ion scavenger is positioned as a TIM 1 . 5 (not shown) between an electronic component 12 and a heat sink 16 .
- TIMs were prepared according to the formulations provided in Table 1.
- HAST Highly Accelerated Stress Test
- the TIM was taped between liner films at 90° C. for 15 minutes, and cut to a 10 mm square.
- the liners were removed and the square sample placed between a nickel-coated copper spreader and a silicon die, creating a “test sandwich.”
- the sample was conditioned at a temperature of a temperature of 130° C., a pressure of 2 atmospheres, and a relative humidity of 85% for 96-192 hours using an environmental chamber supplied by ESPEC.
- the thermal impedance of the sample was determined before and after the sample conditioning using flash diffusivity of the test sandwich. Flash diffusivity was determined using a Netzsch LFA 447 equipment with a Xenon light source.
- the material was periodically checked, and the HAST time was recorded as the final time in which the material met the following criteria: (1) There was no significant visible degradation of the TIM, and no delamination between the TIM and the nickel-coated copper spreader or between the TIM and the silicon die. (2) In addition, the thermal performance did not significantly degrade (testing for thermal performance is further described below). Specifically, the thermal impedance of the test sandwich was the same after HAST testing compared to before (both values were 0.08-0.09° C.cm/W).
- a baking test was performed.
- the TIM was taped between liner films at 90° C. for 15 minutes, and cut to a 10 mm square.
- the liners were removed and the square sample placed between a nickel-coated copper spreader and a silicon die, creating a “test sandwich.”
- the sample was subjected to a 150° C. baking oven, for 200 to 3000 hours using an Oven D2F-6050, supplied by Shanghai JINGHONG.
- the thermal impedance of the sample was determined before and after the sample conditioning using flash diffusivity of the test sandwich. Flash diffusivity was determined using a Netzsch LFA 447 equipment with a Xenon light source.
- the material was periodically checked, and the baking time was recorded as the final time in which the material met the following criteria: (1) There was no significant visible degradation of the TIM, and no delamination between the TIM and the nickel-coated copper spreader or between the TIM and the silicon die. (2) In addition, the thermal performance did not significantly degrade (testing for thermal performance is further described below). Specifically, the thermal impedance of the test sandwich was the same after baking test compared to before (both values were 0.08-0.09° C.cm/W).
- OIT Oxygen Induced Time
- Example I had similar initial thermal impedance as Comparative Example I and Comparative Example II, and similar or better performance in the HAST test. In addition, Example I had significantly longer OIT and baking test results times than either Comparative Example I or Comparative Example II.
- a second set of TIMs were prepared according to the formulations provided in Table 3.
- PCM45F supplied by Honeywell International, Inc.
- a TIM material including a phase change material 0.6 parts
- Songnox® 1024 supplied by SONGWON
- Comparative example 3 was PCM45F without the ion scavenger.
- OIT test results of above materials are presented in Table 4:
- Example 2 had significantly longer OIT times than Comparative Example 3, and Examples 3 and 4 had significantly longer OIT times than Comparative Example 4.
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Abstract
Description
- This application is a U.S. national stage application of PCT/CN2014/081724, filed 7 Jul. 2014, published as WO 2016/004565 on 14 Jan. 2016, which is herein incorporated by reference in its entirety.
- The present disclosure relates generally to thermal interface materials, and more particularly to thermal interface materials that include an ion scavenger.
- Thermal interface materials (TIMs) are widely used to dissipate heat from electronic components, such as central processing units, video graphics arrays, servers, game consoles, smart phones, LED boards, and the like. Thermal interface materials are typically used to transfer excess heat from the electronic component to a heat spreader, such as a heat sink.
- A typical
electronics package structure 10 including thermal interface materials is illustrated inFIG. 1 . Theelectronics package structure 10 illustratively includes a heat generating component, such as anelectronic chip 12, and one or more heat dissipating components, such as aheat spreader 14, and aheat sink 16.Illustrative heat spreaders 14 and heat sinks comprise a metal, metal alloy, or metal-plated substrate, such as copper, copper alloy, aluminum, aluminum alloy, or nickel-plated copper. TIM materials, such as TIM 18 and TIM 20, provide a thermal connection between the heat generating component and the one or more heat dissipating components.Electronics package structure 10 includes a first TIM 18 connecting theelectronic chip 12 andheat spreader 14. TIM 18 is typically referred to as a “TIM 1”.Electronics package structure 10 includes a second TIM 20 connecting theheat spreader 14 andheat sink 16. TIM 18 is typically referred to as a “TIM 2”. In another embodiment,electronics package structure 10 does not include aheat spreader 14, and a TIM (not shown) connects theelectronic chip 12 directly to theheat sink 16. Such a TIM connecting theelectronic chip 12 directly to theheat sink 16 is typically referred to as a TIM 1.5. - Thermal interface materials include thermal grease, grease-like materials, elastomer tapes, and phase change materials. Traditional thermal interface materials include components such as gap pads and thermal pads.
- Exemplary thermal interface materials are disclosed in the following patents and applications, the disclosures of which are hereby incorporated by reference in their entirety: U.S. Pat. No. 6,238,596, U.S. Pat. No. 6,451,422, U.S. Pat. No. 6,605,238, U.S. Pat. No. 6,673,434, U.S. Pat. No. 6,706,219, U.S. Pat. No. 6,797,382, U.S. Pat. No. 6,811,725, U.S. Pat. No. 7,172,711, U.S. Pat. No. 7,244,491, U.S. Pat. No. 7,867,609, U.S. 2007/0051773, U.S. 2008/0044670, U.S. 2009/0111925, U.S. 2010/0129648, and U.S. 2011/0308782.
- Degradation of thermal interface materials typically occurs through polymer chain scission, such as illustrated in
FIG. 2A . As shown inFIG. 2A , the initiation energy produces the initiation reaction RH→R.+H. to form the radical R. This radical combines with an oxygen molecule to form the peroxide radical ROO. The peroxide radical can bond to a proton transferred from another R group to form the peroxide ROOH, as well as a new R. radical, which can combine with a new oxygen molecule. The branching reaction ROOH→RO.+HO. proceeds to form both a RO. radical and a HO. radical. The RO. and HO. are involved in scission of the remaining polymer chain, as well as embrittlement of the thermal interface material through unwanted crosslinking. - In a typical auto-oxidation cycle, the radical initiation reaction speed depends on provision of the initiation energy to produce the R. radical, as well as contaminants in the material. However, both the initiation reaction and the branching reaction are relatively slow due to relatively high activation energies involved in each reaction.
- As shown in
FIG. 2B , each of the initiation reaction and the branching reaction can be catalyzed by a metal ion. These metal ion catalyzed reactions have relatively low activation energies compared to the uncatalyzed reactions illustrated inFIG. 2A . This results in the generation of more radicals than the uncatalyzed cycle ofFIG. 2A , which leads to faster degradation of the thermal interface material. - As illustrated in
FIG. 1 , at least one surface of a TIM material, such as TIM 18 or TIM 20, may be in direct contact with a metal surface, such asheat spreader 14 orheat sink 16. Such metal surfaces may provide metal ions to catalyze the initiation and branching reactions, such as from metal oxides that may form on the surface. For example, copper ions may interact with a polymer comprising the TIM, particularly in the presence of heat, to form free radicals in the polymer that initiation chain scission that degrades the polymer during service. - Improvements in the foregoing are desired.
- The present disclosure provides thermal interface materials that are useful in transferring heat from heat generating electronic devices, such as computer chips, to heat dissipating structures, such as heat spreaders and heat sinks.
- According to an embodiment of the present disclosure, the thermal interface material includes at least one polymer, at least one thermally conductive filler, and at least one ion scavenger.
- In a more particular embodiment, the ion scavenger is a complexing agent selected from the group consisting of: nitrogen containing complexing agents, phosphorus containing complexing agents, hydroxyl carboxylic acid based complexing agents, and combinations of the foregoing. In another more particular embodiment, the ion scavenger is selected from the group consisting of: an acid amide compound, a triazole compound, a tetrazole compound, a triazene compound, an oxamide compounds, a malonamide compound, and combinations of the foregoing. In another more particular embodiment, the ion scavenger is an acid amide compound. In another more particular embodiment, the ion scavenger is selected from the group consisting of: decamethylenedicarboxylic acid disalicyloylhydrazide; 3-(N-salicyloyl)amino-1,2,4-triazole; 2′, 3-bis [[3-[3, 5-di-tert-butyl-4-hydroxyphenyl] propionic]]propionyl hydrazide, and combinations of the foregoing.
- In another more particular embodiment, the ion scavenger is a compound according to any of Formula I to Formula XI or combinations thereof:
- In a more particular embodiment of any of the above embodiments, the thermal interface material comprises 0.1 wt. % to 5 wt. % of the ion scavenger, based on the total weight of the thermal interface material. In a more particular embodiment, the thermal interface material comprises 0.5 wt. % to 1 wt. % of the ion scavenger, based on the total weight of the thermal interface material.
- In a more particular embodiment of any of the above embodiments, the thermal interface material further comprises at least one phase change material. In an even more particular embodiment, the phase change material is a wax.
- In a more particular embodiment of any of the above embodiments, the thermal interface material further comprises at least coupling agent. In an even more particular embodiment, the coupling agent material is selected from the group consisting of: a titanate coupling agent, a zirconate coupling agent, and a silane coupling agent, and combinations of the foregoing. In an even more particular embodiment, the coupling agent is a titanate coupling agent.
- In a more particular embodiment of any of the above embodiments, the thermal interface material further comprises at least one crosslinker.
- In a more particular embodiment of any of the above embodiments, the thermal interface material comprises: 5 wt. % to 10 wt. % of the at least one polymer; 50 wt. % to 95 wt. % of the at least one thermally conductive filler; and 0.1 wt. % to 5 wt. % of the ion scavenger, based on the total weight of the thermal interface material. In a first even more particular embodiment, the thermal interface material comprises: 2 wt. % to 5 wt. % of at least one wax; 0.1 to 0.5 wt. % of at least one antioxidant; 1 wt. % to 2 wt. % of at least one coupling agent; and 0.5 wt. % to 0.6 wt. % of at least one crosslinker based on the total weight of the thermal interface material; wherein the thermal interface material comprises 75 wt. % to 90 wt. % of the at least one thermally conductive filler, based on the total weight of the thermal interface material. In a second even more particular embodiment, the thermal interface material comprises: 2 wt. % to 5 wt. % of at least one wax; 0.1 to 0.5 wt. % of at least one antioxidant; 1 wt. % to 2 wt. % of at least one coupling agent; and 0.5 wt. % to 0.6 wt. % of at least one crosslinker based on the total weight of the thermal interface material; wherein the thermal interface material comprises 75 wt. % to 90 wt. % of the at least one thermally conductive filler, based on the total weight of the thermal interface material. In an even more particular embodiment, the thermal interface material comprises: 1.5 wt. % to 2 wt. % of at least one wax; 0.1 to 1 wt. % of at least one antioxidant; and 0.5 wt. % to 1 wt. % of at least one coupling agent; wherein the thermal interface material comprises 85 wt. % to 95 wt. % of the at least one thermally conductive filler, based on the total weight of the thermal interface material. In another even more particular embodiment, the thermal interface material further comprises 0.1 wt. % to 1 wt. % of at least one crosslinker.
- According to an embodiment of the present disclosure, an electronic components includes a heat sink, an electronic chip, and a thermal interface material having a first surface layer and a second surface layer, the thermal interface material positioned between the heat sink and electronic chip, the thermal interface material including: at least one polymer; at least one thermally conductive filler; and at least one ion scavenger. In some embodiments, the thermal interface material is according to any of the above embodiments. In a first more particular embodiment, the first surface layer is in contact with a surface of the electronic chip and the second surface layer is in contact with the heat sink. In a second more particular embodiment, the electronic component further comprises a heat spreader positioned between the heat sink and the electronic chip, wherein the first surface layer is in contact with a surface of the electronic chip and the second surface layer is in contact with the heat spreader. In a third more particular embodiment, the electronic component further comprises a heat spreader positioned between the heat sink and the electronic chip, wherein the first surface layer is in contact with a surface of the heat spreader and the second surface layer is in contact with the heat sink.
- The above-mentioned and other features and advantages of this disclosure, and the manner of attaining them, will become more apparent and the invention itself will be better understood by reference to the following description of embodiments of the invention taken in conjunction with the accompanying drawings, wherein:
-
FIG. 1 schematically illustrates a typical electronics package structure; -
FIG. 2A illustrates a typical degradation mechanism for a TIM; -
FIG. 2B illustrates a metal-catalyzed degradation mechanism; and -
FIG. 3 illustrates an exemplary complexing reaction with an ion scavenger. - Corresponding reference characters indicate corresponding parts throughout the several views. The exemplifications set out herein illustrate exemplary embodiments of the invention and such exemplifications are not to be construed as limiting the scope of the invention in any manner.
- The present invention relates to thermal interface materials (TIMs) useful in transferring heat away from electronic components. In one exemplary embodiment, the TIM comprises a polymer matrix, at least one thermally conductive filler, and at least one ion scavenger.
- In some embodiments, the TIM may optionally include one or more of the following components: coupling agent, antioxidant, phase change material, and other additives.
- Without wishing to be bound by any theory, it is believed that the addition of an ion scavenger inhibits metal ion-induced free radical formation. The ion scavenger is believed to capture and bind metal ions in a complex such that the metal ions no longer have an empty electron orbit and are effectively disabled from initiation the formation of free radicals in the polymer.
- An exemplary complexing reaction is illustrated in
FIG. 3 . InFIG. 3 , the ion scavenger, illustratively a dihydrazide, reacts with a metal ion, illustratively copper oxide. Without wishing to be bound by any particular theory, it is believed that the metal ion is attracted to one or more lone pairs of electrons on the ion scavenger. The attraction between the metal ion and lone pairs of electrons forms a complex, in which the metal ion no longer has an empty electron orbit and does not participate in the metal-catalyzed reactions ofFIG. 2B . - As illustrated in the Examples presented below, the inclusion of an ion scavenger in the thermal interface material inhibited degradation of the polymer to a surprising extent.
- The TIM includes a polymer, such as an elastomer. In some embodiments, the polymer comprises a silicone rubber, a siloxane rubber, a siloxane copolymer, or other suitable silicone-containing rubber. In some embodiments, the polymer comprises one or more hydrocarbon rubber compounds, including saturated or unsaturated hydrocarbon rubber compounds.
- Exemplary saturated rubbers include ethylene-propylene rubbers (EPR, EPDM), polyethylene/butylene, polyethylene-butylene-styrene, polyethylene-propylene-styrene, hydrogenated polyalkyldiene “mono-ols” (such as hydrogenated polybutadiene mono-ol, hydrogenated polypropadiene mono-ol, hydrogenated polypentadiene mono-ol), hydrogenated polyalkyldiene “diols” (such as hydrogenated polybutadiene diol, hydrogenated polypropadiene diol, hydrogenated polypentadiene diol) and hydrogenated polyisoprene, polyolefin elastomer, and blends thereof. In some embodiments, the polymer is a hydrogenated polybutadiene mono-ol.
- Exemplary unsaturated rubbers include polybutadiene, polyisoprene, polystyrene-butadiene and blends thereof, or blends of saturated and unsaturated rubber compounds.
- The TIM may comprise the one or more polymers in an amount as little as 1 wt. %, 2 wt. %, 5 wt. %, 6 wt. %, 7 wt. %, 8 wt. %, as great as 10 wt. %, 20 wt. %, 25 wt. %, 50 wt. %, or greater, or within any range defined between any two of the foregoing values, based on the total weight of the TIM.
- The TIM includes one or more thermally conductive fillers. Exemplary thermally conductive fillers include metals, alloys, nonmetals, metal oxides and ceramics, and combinations thereof. The metals include, but are not limited to, aluminum, copper, silver, zinc, nickel, tin, indium, and lead. The nonmetal include, but are not limited to, carbon, graphite, carbon nanotubes, carbon fibers, graphenes, and silicon nitride. The metal oxide or ceramics include but not limited to alumina, aluminum nitride, boron nitride, zinc oxide, and tin oxide.
- The TIM may comprise the one or more thermally conductive fillers in an amount as little as 10 wt. %, 20 wt. %, 25 wt. %, 50 wt. %, as great as 75 wt. %, 80 wt. %, 85 wt. %, 90 wt. %, 95 wt. %, or within any range defined between any two of the foregoing values, based on the total weight of the TIM.
- The TIM includes one or more ion scavengers. Exemplary ion scavengers include nitrogen containing complexing agents, phosphorous containing complexing agents, and hydroxyl carboxylic acid based complexing agents. In some exemplary embodiments, the ion scavenger is selected from acid amide compounds, such as hydrazide or dihydrazide. In some exemplary embodiments, the ion scavenger is selected from triazole compounds, tetrazole compounds, triazene compounds, oxamide comounds, or malonamide compounds. In some exemplary embodiments, the ion scavenger is selected from decamethylenedicarboxylic acid disalicyloylhydrazide; 3-(N-salicyloyl)amino-1,2,4-triazole; and 2′, 3-bis [[3-[3, 5-di-tert-butyl-4-hydroxyphenyl] propionic]]propionyl hydrazide.
- In another more particular embodiment, the ion scavenger is a compound according to any of Formula I to Formula XI or combinations thereof:
- The TIM may comprise the one or more ion scavengers in an amount as little as 0.1 wt. %, 0.2 wt. %, 0.5 wt. %, 1 wt. % as great as 1.5 wt. %, 2 wt. %, 5 wt. %, 10 wt. %, or within any range defined between any two of the foregoing values, based on the total weight of the TIM.
- In some exemplary embodiments, the TIM comprises one or more coupling agents. Exemplary coupling agents include organometallic compounds, such as titanate coupling agents or zircontate coupling agents, and organic compounds, such as silane coupling agents. Exemplary coupling agents include titanium IV 2,2 (bis 2-propenolatomethyl)butanolato, tris(dioctyl)pyrophosphato-O; zirconium IV 2,2 (bis 2-propenolatomethyl)butanolato, tris(diisooctyl)pyrophosphato-O; titanium IV 2-propanolato, tris(dioctyl)-pyrophosphato-O) adduct with 1 mole of diisooctyl phosphite; titanium IV bis(dioctyl)pyrophosphato-O, oxoethylenediolato, (Adduct), bis(dioctyl) (hydrogen)phosphite-O; titanium IV bis(dioctyl)pyrophosphato-O, ethylenediolato (adduct), bis(dioctyl)hydrogen phosphite; and zirconium IV 2,2-bis(2-propenolatomethyl) butanolato, cyclo di[2,2-(bis 2-propenolatomethyl) butanolato], pyrophosphato-O,O.
- In some exemplary embodiments, the TIM may comprise the one or more coupling agents in an amount as little as 0.1 wt. %, 0.5 wt. %, 0.67 wt. %, 0.75 wt. %, as great as 1 wt. %, 1.5 wt. %, 2 wt. %, 5 wt. %, 10 wt. %, or within any range defined between any two of the foregoing values, based on the total weight of the TIM.
- In some exemplary embodiments, the TIM comprises one or more antioxidants. Exemplary antioxidants include phenol type, amine type antioxidants, or any other suitable type of antioxidant, or a combination thereof. The phenol or amine type antioxidant may also be a sterically hindered phenol or amine type antioxidant. Exemplary phenol type antioxidants include octadecyl 3-(3,5-di-(tert)-butyl-4-hydroxyphenyl) propionate. Exemplary amine type antioxidants include 2,6-di-tert-butyl-4-(4,6-bis(octylthio)-1,3,5-triazin-2-ylamino) phenol. Exemplary stearically hindered antioxidants include sterically hindered sulfur containing phenolic antioxidants. Exemplary antioxidants include the Irganox® antioxidants available from BASF.
- Although ion scavengers and antioxidants both reduce oxidative degradation of the TIM, ion scavengers are believed to function by capturing and binding metal ions in a complex such that the metal ions no longer have a net charge and are effectively disabled from participating in the metal-catalyzed reactions of
FIG. 2B . In contrast, antioxidants are generally believed to function by transferring electrons to an oxidizing agent, such as the radicals ofFIG. 2A . - In some exemplary embodiments, the TIM may comprise the one or more antioxidants in an amount as little as 0.05 wt. %, 0.1 wt. %, 0.5 wt. %, 1 wt. % as great as 1.5 wt. %, 2 wt. %, 5 wt. %, 10 wt. %, or within any range defined between any two of the foregoing values, based on the total weight of the TIM.
- In some exemplary embodiments, the TIM comprises one or more phase change materials. A phase change material is a material having a melting point or melting point range at or below the operating temperature of a portion of an electronic device in which the TIM is to be used. An exemplary phase change material is a wax. Other exemplary phase change materials include low melting alloys, such as Wood's metal, Field's metal, or a metal or alloy having a melting point between about 20° C. and 90° C.
- In some embodiments, the phase change material has a phase change temperature as low as 20° C., 30° C., 40° C., 45° C. 50° C., as high as 60° C., 70° C., 80° C., 90° C., 100° C., 110° C., or within any range defined between any two of the foregoing values. In some more particular embodiments, the phase change material has a phase change temperature as low as 30° C., 40° C., 45° C. as high as 50° C., 60° C., 70° C., or within any range defined between any two of the foregoing values.
- Exemplary waxes include polyethylene (PE) wax, paraffin wax, AC-1702, a polyethylene wax, AC-430, a copolymer of ethylene-vinyl acetate wax, and AC-6702, an oxidized polyethylene wax, each available from Honeywell International Inc., a polyethylene wax blended with polytetrafluoroethylene such as PEW-0602F wax available from Nanjing Tianshi New Material Technologies, TAC wax, available from The International Group, Inc., and RT44HC, available from Hangzhou Ruhr Tech.
- The TIM may comprise the one or more phase change materials in an amount as little as 0.5 wt. %, 1 wt. %, 2 wt. %, 3 wt. %, 5 wt. %, 10 wt. %, as great as 20 wt. %, 25 wt. %, 50 wt. %, or greater, or within any range defined between any two of the foregoing values, based on the total weight of the TIM.
- In some exemplary embodiments, the TIM comprises one or more additional additives. Exemplary additives include crosslinkers, such as alkylated melamine formaldehyde resin, pigments, and solvents, such as iosparaffinic fluids. In some exemplary embodiments, the TIM may comprise the one or more additives in an amount as little as 0.1 wt. %, 0.5 wt. %, 1 wt. % as great as 1.5 wt. %, 2 wt. %, 5 wt. %, 10 wt. %, or within any range defined between any two of the foregoing values, based on the total weight of the TIM.
- In a first non-limiting illustrative embodiment, the TIM includes about 1 wt. % to about 25 wt. % polymer, about 50 wt. % to about 95 wt. % thermally conductive filler, and about 0.1 wt. % to about 5 wt. % ion scavenger. In a more particular embodiment, the ion scavenger is an acid amide compounds, such as hydrazide or dihydrazide. In an even more particular embodiment, the ion scavenger is selected from decanedicarboxylic acid dietlythyl oyl hydrazide; 3-(N-salicyloyl)amino-1,2,4-triazole; and 2′, 3-bis [[3-[3, 5-di-tert-butyl-4-hydroxyphenyl] propionic]]propionyl hydrazide
- In a second illustrative embodiment, which is a more particular embodiment of the first illustrative embodiment, the TIM further includes about 1 wt. % to about 5 wt. % of at least one phase change material.
- In a third illustrative embodiment, which is a more particular embodiment of either the first or the second illustrative embodiments, the TIM includes about 0.1 wt. % to about 5 wt. % of at least one crosslinker.
- In a fourth illustrative embodiment, which is a more particular embodiment of any of the first to third illustrative embodiments, the TIM includes about 0.1 wt. % to about 5 wt. % of at least one coupling agent.
- In a fifth illustrative embodiment, which is a more particular embodiment of any of the first to fourth illustrative embodiments, the TIM includes about 0.1 wt. % to about 5 wt. % of at least one phase change material.
- In some exemplary embodiments, a material thermal interface material including an ion scavenger has a resistance to degradation greater than a similarly formulated thermal interface material not including an ion scavenger. The resistance to degradation may be characterized by an Oxygen Induced Time (OIT) test, such as determined by ASTM D3859-07, the disclosures of which are hereby incorporated by reference in their entirety. Longer OIT times indicate better thermal stability.
- In some exemplary embodiments, the OIT of a TIM including an ion scavenger is as little as 20% greater, 25% greater, 30% greater, 50% greater, 75% greater, 100% greater, as great as 150% greater, 200% greater, 300% greater, 375% greater, 400% greater, 500% greater, or more than the OIT of a similarly formulated TIM not including an ion scavenger, or within any range defined between an y two of the foregoing values.
- In some exemplary embodiments, the OIT of a TIM including an ion scavenger is as little as 30 minutes, 45 minutes, 60 minutes, as great as 75 minutes, 90 minutes, 120 minutes, 150 minutes, or greater or within any range defined between an y two of the foregoing values.
- In some exemplary embodiments, the OIT of a TIM in contact with a metal surface is as little as 15 minutes, 20 minutes, 30 minutes, 45 minutes, as great as 60 minutes, 75 minutes, 90 minutes, 120 minutes, 150 minutes, or greater or within any range defined between an y two of the foregoing values.
- In some exemplary embodiments, the thermal interface material has a thermal impedance as little as 0.05° C. cm2/W, 0.08° C. cm2/W, 0.09° C. cm2/W, as high as 0.1° C. cm2/W, 0.5° C. cm2/W, 1° C. cm2/W, 2° C. cm2/W, or within any range defined between any two of the foregoing values.
- In some exemplary embodiments, the thermal interface material has an unchanged thermal impedance and no visible degradation of the TIM after undergoing a Highly Accelerated Stress Test (HAST) conditioning at a temperature of 120° C., a pressure of 2 atmospheres, and a relative humidity of 85%. The for thermal impedance may be unchanged for as short as 90 hours, 120 hours, 150 hours, as long as 180 hours, 190 hours, 200 hours, or longer, or within any range defined between any two of the foregoing values.
- In some exemplary embodiments, the thermal interface material has an unchanged thermal impedance and no visible degradation of the TIM after undergoing a baking test conditioning at a temperature of 150° C. The for thermal impedance may be unchanged for as short as 1000 hours, 1500 hours, 2000 hours, as long as 2200 hours, 2500 hours, 2800 hours, or longer, or within any range defined between any two of the foregoing values.
- In some exemplary embodiments, the TIM is prepared by combining the individual components in a heated mixer and blending the composition together. The blended composition may then be baked.
- In some exemplary embodiments, the TIM is baked at a temperature as low as 25° C., 50° C., 75° C., 80° C., as high as 100° C., 125° C., 150° C., 170° C., or within any range defined between any two of the foregoing values. In some exemplary embodiments, the TIM is baked for as little as 0.5 minutes, 1 minute, 30 minutes, 1 hour, 2 hours, as long as 8 hours, 12 hours, 24 hours, 36, hours, 48 hours, or within any range defined between any two of the foregoing values. An exemplary baking condition is 80° C. for 30 minutes.
- Referring again to
FIG. 1 , in some exemplary embodiments, the thermal interface material including an ion scavenger is positioned as aTIM 1 between anelectronic component 12 and aheat spreader 14, as indicated byTIM 18. In some exemplary embodiments, the thermal interface material including an ion scavenger is positioned as a TIM 2 between an aheat spreader 14 and aheat sink 16, as indicated byTIM 20. In some exemplary embodiments, the thermal interface material including an ion scavenger is positioned as a TIM 1.5 (not shown) between anelectronic component 12 and aheat sink 16. - TIMs were prepared according to the formulations provided in Table 1.
-
TABLE 1 Formulations (wt. %) for Example 1 and Comparative Examples 1 and 2 Comp. Comp. Ex. 1 Ex. 1 Ex. 2 Elastomer 6.22 6.22 6.22 Wax 1.78 1.78 1.78 Total antioxidant 0.5 0.5 0.5 Titanium coupling agent 0.67 0.67 0.67 Aluminum powder thermally conductive filler 90.83 90.83 90.83 Crosslinker 0.6 — 0.6 Ion scavenger 0.5 — — - To prepare example 1, 6.22 parts (weight) Kraton elastomer (a hydroxyl-terminated ethylene butylene copolymer, specialty mono-ol), 1.78 parts of a microcrystalline wax with a melting point of about 45° C., 0.5 total parts of an antioxidant mixture were combined and blended in a heated mixer until the combination had melted and had a substantially homogeneous appearance. 0.67 parts Titanium IV 2, 2 (bis 2-propenolatomethyl) butanolato, tris(dioctyl)pyrophosphato-O coupling agent was added, and the combination was blended, again until the combination had a substantially homogeneous appearance. 90.83 parts of Aluminum powder, a thermally conductive filler, was added, and the combination was again blended until it had a substantially homogeneous appearance. Finally 0.6 parts of a Cymel crosslinker resin(alkylated melamine formaldehyde resin) and 0.5 parts of an ion scavenger Songnox® 1024 were added. The final combination had a homogeneous appearance.
- To prepare comparative example 1, 6.22 parts Kraton elastomer (a hydroxyl-terminated ethylene butylene copolymer, specialty mono-ol), 1.78 parts of a microcrystalline wax with a melting point of about 45° C., and 0.50 wt % antioxidant were combined and blended in a heated mixer until the combination had melted and had a substantially homogeneous appearance. 0.67 parts Titanium IV 2, 2 (bis 2-propenolatomethyl) butanolato, tris(dioctyl)pyrophosphato-O was added, and the combination was blended, again until the combination had a substantially homogeneous appearance. 90.83 parts of Aluminum powder was added, and the combination was again blended until it had a substantially homogeneous appearance.
- To prepare comparative example 2, 6.22 parts Kraton elastomer (a hydroxyl-terminated ethylene butylene copolymer, specialty mono-ol), 1.78 parts of a microcrystalline wax with a melting point of about 45° C., and 0.50 wt % antioxidant were combined and blended in a heated mixer until the combination had melted and had a substantially homogeneous appearance. 0.67 parts Titanium IV 2, 2 (bis 2-propenolatomethyl) butanolato, tris(dioctyl)pyrophosphato-O was added, and the combination was blended, again until the combination had a substantially homogeneous appearance. 90.83 parts of Aluminum powder was added, and the combination was again blended until it had a substantially homogeneous appearance. Finally 0.60 parts Cymel resin(alkylated melamine formaldehyde resin) was added. The final combination had a homogeneous appearance.
- For each TIM, a Highly Accelerated Stress Test (HAST) was performed. The TIM was taped between liner films at 90° C. for 15 minutes, and cut to a 10 mm square. The liners were removed and the square sample placed between a nickel-coated copper spreader and a silicon die, creating a “test sandwich.” The sample was conditioned at a temperature of a temperature of 130° C., a pressure of 2 atmospheres, and a relative humidity of 85% for 96-192 hours using an environmental chamber supplied by ESPEC. The thermal impedance of the sample was determined before and after the sample conditioning using flash diffusivity of the test sandwich. Flash diffusivity was determined using a Netzsch LFA 447 equipment with a Xenon light source.
- The material was periodically checked, and the HAST time was recorded as the final time in which the material met the following criteria: (1) There was no significant visible degradation of the TIM, and no delamination between the TIM and the nickel-coated copper spreader or between the TIM and the silicon die. (2) In addition, the thermal performance did not significantly degrade (testing for thermal performance is further described below). Specifically, the thermal impedance of the test sandwich was the same after HAST testing compared to before (both values were 0.08-0.09° C.cm/W).
- For each TIM, a baking test was performed. The TIM was taped between liner films at 90° C. for 15 minutes, and cut to a 10 mm square. The liners were removed and the square sample placed between a nickel-coated copper spreader and a silicon die, creating a “test sandwich.” The sample was subjected to a 150° C. baking oven, for 200 to 3000 hours using an Oven D2F-6050, supplied by Shanghai JINGHONG. The thermal impedance of the sample was determined before and after the sample conditioning using flash diffusivity of the test sandwich. Flash diffusivity was determined using a Netzsch LFA 447 equipment with a Xenon light source.
- The material was periodically checked, and the baking time was recorded as the final time in which the material met the following criteria: (1) There was no significant visible degradation of the TIM, and no delamination between the TIM and the nickel-coated copper spreader or between the TIM and the silicon die. (2) In addition, the thermal performance did not significantly degrade (testing for thermal performance is further described below). Specifically, the thermal impedance of the test sandwich was the same after baking test compared to before (both values were 0.08-0.09° C.cm/W).
- For each TIM, an Oxygen Induced Time (OIT) test was conducted following by ASTM D3859-07 standard. OIT is a standardized test performed in a DSC (Differential Scanning calorimeter) which measures the level of thermal stabilization of the material tested. Longer time indicates better thermal stability. 10-30 mg mixed samples described above, will go OIT test through DSC Q100, supplied by TA instrument. The test condition is under 50 ml/min O2 flow rate and 210° C. peak temperature (with 20° C./min ramp up).
- The OIT, HAST and baking test results are presented in Table 2:
-
TABLE 2 Performance Test Results Comp. Comp. Performance Ex. 1 Ex. 2 Ex. 1 Average TI at time zero (° C. · 0.08-0.09 0.08-0.09 0.08-0.09 cm2/W) Oxidative Induction Time - 210° C. 35.85 42.15 77.54 (min) HAST - 130° C., 85% RH, 2 atm 96 192 >192 (hours) 150° C. baking test (hours) 1000 1500 >=2800 - As shown in Table 2, Example I had similar initial thermal impedance as Comparative Example I and Comparative Example II, and similar or better performance in the HAST test. In addition, Example I had significantly longer OIT and baking test results times than either Comparative Example I or Comparative Example II.
- A second set of TIMs were prepared according to the formulations provided in Table 3.
-
TABLE 3 Formulations (wt. %) for Examples 2-4 and Comparative Examples 4-5 Comp. Comp. Ex. 2 Ex. 3 Ex. 3 Ex. 4 Ex. 4 PCM45F 100 100 — — — Elastomer — — 12.5 12.5 12.5 Titanium coupling agent — — 1.5 1.5 1.5 Aluminum powder thermally — — 71.66 71.66 71.66 conductive filler Zinc oxide powder thermally — — 14.34 14.34 14.34 conductive filler Ion scavenger 0.6 — 0.6 1.8 — - To prepare example 2, 100 parts PCM45F (supplied by Honeywell International, Inc.), a TIM material including a phase change material, and 0.6 parts Songnox® 1024 (supplied by SONGWON) were combined and blended in a heated mixer until the combination had melted and had a substantially homogeneous appearance.
- Comparative example 3 was PCM45F without the ion scavenger.
- To prepare example 3, 12.5 parts of Kraton elastomer (a hydroxyl-terminated ethylene butylene copolymer, specialty mono-ol), 1.5 parts of Titanium IV 2-propanolato, tris isooctadecanoato-O, and 0.6 parts ion scavenger Songnox® 1024 were combined and blended until the combination had a substantially homogeneous appearance. 71.66 parts of Aluminum powder, and 14.34 parts of Zinc oxide powder were added, and the combination was again blended until it had a substantially homogeneous appearance.
- To prepare example 4, 12.5 parts of Kraton elastomer (a hydroxyl-terminated ethylene butylene copolymer, specialty mono-ol), 1.5 parts of Titanium IV 2-propanolato, tris isooctadecanoato-O, and 1.8 parts ion scavenger Songnox® 1024 were combined and blended until the combination had a substantially homogeneous appearance. 71.66 parts of Aluminum powder, and 14.34 parts of Zinc oxide powder were added, and the combination was again blended until it had a substantially homogeneous appearance.
- To prepare comparative example 4, 12.5 parts of Kraton elastomer (a hydroxyl-terminated ethylene butylene copolymer, specialty mono-ol), and 1.5 parts of Titanium IV 2-propanolato, tris isooctadecanoato-O were combined and blended until the combination had a substantially homogeneous appearance. 71.66 parts of Aluminum powder, and 14.34 parts of Zinc oxide powder were added, and the combination was again blended until it had a substantially homogeneous appearance.
- For each TIM, an Oxygen Induced Time (OIT) test was conducted following by ASTM D3859-07 standard as discussed above. OIT test results of above materials are presented in Table 4:
-
TABLE 4 OIT Test Results Samples OIT Result (min) Ex. 2 57.92 Comp. Ex. 3 24.56 Ex. 3 92.58 Ex. 4 145.50 Comp. Ex. 4 23.28 - As shown in Table 4, Example 2 had significantly longer OIT times than Comparative Example 3, and Examples 3 and 4 had significantly longer OIT times than Comparative Example 4. In addition, Example 4, which had twice the ion scavenger as Example 3, had significantly longer OIT times than Example 3.
- While this invention has been described as having exemplary designs, the present invention can be further modified within the spirit and scope of this disclosure. This application is therefore intended to cover any variations, uses, or adaptations of the invention using its general principles. Further, this application is intended to cover such departures from the present disclosure as come within known or customary practice in the art to which this invention pertains and which fall within the limits of the appended claims.
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10428256B2 (en) | 2017-10-23 | 2019-10-01 | Honeywell International Inc. | Releasable thermal gel |
US10501671B2 (en) | 2016-07-26 | 2019-12-10 | Honeywell International Inc. | Gel-type thermal interface material |
US10781349B2 (en) | 2016-03-08 | 2020-09-22 | Honeywell International Inc. | Thermal interface material including crosslinker and multiple fillers |
US11041103B2 (en) | 2017-09-08 | 2021-06-22 | Honeywell International Inc. | Silicone-free thermal gel |
US11072706B2 (en) | 2018-02-15 | 2021-07-27 | Honeywell International Inc. | Gel-type thermal interface material |
US11373921B2 (en) | 2019-04-23 | 2022-06-28 | Honeywell International Inc. | Gel-type thermal interface material with low pre-curing viscosity and elastic properties post-curing |
WO2023154375A1 (en) * | 2022-02-09 | 2023-08-17 | Henkel Ag & Co. Kgaa | Low thermal resistance phase change thermal interface material |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20160094385A (en) | 2013-12-05 | 2016-08-09 | 허니웰 인터내셔날 인코포레이티드 | STANNOUS METHANSULFONATE SOLUTION WITH ADJUSTED pH |
MX2016016984A (en) * | 2014-07-07 | 2017-05-03 | Honeywell Int Inc | Thermal interface material with ion scavenger. |
CN112080258A (en) | 2014-12-05 | 2020-12-15 | 霍尼韦尔国际公司 | High performance thermal interface material with low thermal resistance |
JP6436035B2 (en) * | 2015-09-25 | 2018-12-12 | 信越化学工業株式会社 | Thermally softening thermally conductive silicone grease composition, thermal conductive film forming method, heat dissipation structure and power module device |
US10312177B2 (en) | 2015-11-17 | 2019-06-04 | Honeywell International Inc. | Thermal interface materials including a coloring agent |
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US10567084B2 (en) * | 2017-12-18 | 2020-02-18 | Honeywell International Inc. | Thermal interface structure for optical transceiver modules |
US20190301814A1 (en) * | 2018-04-03 | 2019-10-03 | Nanotek Instruments, Inc. | Metallized graphene foam having high through-plane conductivity |
JP7453081B2 (en) * | 2019-08-13 | 2024-03-19 | 三ツ星ベルト株式会社 | Rubber composition and its manufacturing method and use |
CN111378402B (en) * | 2020-04-10 | 2021-01-12 | 山东宝龙达实业集团有限公司 | Preparation method and application of hydroxyl scavenging agent |
CN113766776B (en) * | 2021-08-03 | 2023-03-24 | 联想(北京)有限公司 | Electronic device |
Family Cites Families (272)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US1655133A (en) | 1926-11-09 | 1928-01-03 | Charles A Clase | Inside micrometer gauge |
JPS5137538B1 (en) | 1971-03-31 | 1976-10-16 | ||
US3748365A (en) | 1972-05-26 | 1973-07-24 | Airco Inc | Electron beam heating system |
JPS567298B2 (en) | 1973-06-18 | 1981-02-17 | ||
JPS5314131A (en) | 1975-05-02 | 1978-02-08 | Nobuyasu Doi | Luster tinnlead alloy electroplating method |
US4180498A (en) | 1976-07-30 | 1979-12-25 | Ciba-Geigy Corporation | Hindered phenyl phosphites |
CH630174A5 (en) | 1978-04-05 | 1982-05-28 | Hans Meyer | INTERIOR MEASURING DEVICE. |
DE2933870A1 (en) | 1979-08-21 | 1981-03-12 | Siemens AG, 1000 Berlin und 8000 München | N.N'-BIS-SALICYLOYL-HYDRAZINE AS A METAL DETECTOR. |
JPS5944306B2 (en) | 1982-09-24 | 1984-10-29 | 住友化学工業株式会社 | Method for producing Nt-alkylamides |
JPS5967387A (en) | 1982-10-08 | 1984-04-17 | Hiyougoken | Tin, lead and tin-lead alloy plating bath |
US4565610A (en) | 1983-12-22 | 1986-01-21 | Learonal, Inc. | Bath and process for plating lead and lead/tin alloys |
US4524145A (en) | 1984-09-04 | 1985-06-18 | Bristol-Myers Company | 4'-Deschlororebeccamycin pharmaceutical composition and method of use |
JPS61105583A (en) | 1984-10-30 | 1986-05-23 | 松下電器産業株式会社 | Color liquid crystal display unit |
JP2611364B2 (en) | 1988-08-26 | 1997-05-21 | 上村工業株式会社 | Electroless tin plating bath and electroless tin plating method |
DE59005446D1 (en) | 1989-12-18 | 1994-05-26 | Riedel De Haen Ag | Method and device for producing a solution of a non-ferrous metal sulfonate. |
US5167851A (en) | 1991-04-22 | 1992-12-01 | Thermoset Plastics, Inc. | Hydrophilic thermally conductive grease |
US5562814A (en) | 1995-09-01 | 1996-10-08 | Dale Electronics, Inc. | Sludge-limiting tin and/or lead electroplating bath |
US6005053A (en) | 1996-01-22 | 1999-12-21 | The Dow Chemical Company | Polyolefin elastomer blends exhibiting improved properties |
US6054198A (en) | 1996-04-29 | 2000-04-25 | Parker-Hannifin Corporation | Conformal thermal interface material for electronic components |
JP3662715B2 (en) | 1997-06-16 | 2005-06-22 | アルプス電気株式会社 | Conductive material, conductive paste and electronic device |
JP4015722B2 (en) | 1997-06-20 | 2007-11-28 | 東レ・ダウコーニング株式会社 | Thermally conductive polymer composition |
US6432497B2 (en) | 1997-07-28 | 2002-08-13 | Parker-Hannifin Corporation | Double-side thermally conductive adhesive tape for plastic-packaged electronic components |
US6096414A (en) | 1997-11-25 | 2000-08-01 | Parker-Hannifin Corporation | High dielectric strength thermal interface material |
FR2775481B1 (en) | 1998-02-27 | 2003-10-24 | Rhodia Chimie Sa | CROSS-LINKABLE ADHESIVE SILICONE COMPOSITION AND USE THEREOF FOR BONDING VARIOUS SUBSTRATES |
JP3948642B2 (en) | 1998-08-21 | 2007-07-25 | 信越化学工業株式会社 | Thermally conductive grease composition and semiconductor device using the same |
US6432320B1 (en) | 1998-11-02 | 2002-08-13 | Patrick Bonsignore | Refrigerant and heat transfer fluid additive |
US20040069454A1 (en) | 1998-11-02 | 2004-04-15 | Bonsignore Patrick V. | Composition for enhancing thermal conductivity of a heat transfer medium and method of use thereof |
JP2000143808A (en) | 1998-11-17 | 2000-05-26 | Fuji Kobunshi Kogyo Kk | Heat conductive, electrical insulating silicone gel composition |
DE69921695T2 (en) | 1998-12-15 | 2005-08-11 | Parker-Hannifin Corp., Cleveland | METHOD FOR ATTACHING A THERMAL PHASE-RECHARGEABLE COMPOUND MATERIAL |
US6238596B1 (en) | 1999-03-09 | 2001-05-29 | Johnson Matthey Electronics, Inc. | Compliant and crosslinkable thermal interface materials |
US6391442B1 (en) | 1999-07-08 | 2002-05-21 | Saint-Gobain Performance Plastics Corporation | Phase change thermal interface material |
US6605238B2 (en) | 1999-09-17 | 2003-08-12 | Honeywell International Inc. | Compliant and crosslinkable thermal interface materials |
US6706219B2 (en) | 1999-09-17 | 2004-03-16 | Honeywell International Inc. | Interface materials and methods of production and use thereof |
US6975944B1 (en) | 1999-09-28 | 2005-12-13 | Alpha Mos | Method and apparatus for monitoring materials used in electronics |
US6496373B1 (en) | 1999-11-04 | 2002-12-17 | Amerasia International Technology, Inc. | Compressible thermally-conductive interface |
JP2001139818A (en) | 1999-11-12 | 2001-05-22 | Dow Corning Toray Silicone Co Ltd | Thermally conductive silicone rubber composition |
US6797382B2 (en) * | 1999-12-01 | 2004-09-28 | Honeywell International Inc. | Thermal interface materials |
US6673434B2 (en) | 1999-12-01 | 2004-01-06 | Honeywell International, Inc. | Thermal interface materials |
US6451422B1 (en) | 1999-12-01 | 2002-09-17 | Johnson Matthey, Inc. | Thermal interface materials |
US7369411B2 (en) | 2000-02-25 | 2008-05-06 | Thermagon, Inc. | Thermal interface assembly and method for forming a thermal interface between a microelectronic component package and heat sink |
US6372997B1 (en) | 2000-02-25 | 2002-04-16 | Thermagon, Inc. | Multi-layer structure and method for forming a thermal interface with low contact resistance between a microelectronic component package and heat sink |
US7078109B2 (en) | 2000-02-25 | 2006-07-18 | Thermagon Inc. | Heat spreading thermal interface structure |
US6940721B2 (en) | 2000-02-25 | 2005-09-06 | Richard F. Hill | Thermal interface structure for placement between a microelectronic component package and heat sink |
US6984685B2 (en) | 2000-04-05 | 2006-01-10 | The Bergquist Company | Thermal interface pad utilizing low melting metal with retention matrix |
US6797758B2 (en) | 2000-04-05 | 2004-09-28 | The Bergquist Company | Morphing fillers and thermal interface materials |
US6649325B1 (en) | 2001-05-25 | 2003-11-18 | The Bergquist Company | Thermally conductive dielectric mounts for printed circuitry and semi-conductor devices and method of preparation |
US6339120B1 (en) | 2000-04-05 | 2002-01-15 | The Bergquist Company | Method of preparing thermally conductive compounds by liquid metal bridged particle clusters |
US20030207128A1 (en) | 2000-04-10 | 2003-11-06 | Tomoaki Uchiya | Thermally conductive sheet |
US6400565B1 (en) | 2000-04-21 | 2002-06-04 | Dell Products L.P. | Thermally conductive interface member |
US6616999B1 (en) | 2000-05-17 | 2003-09-09 | Raymond G. Freuler | Preapplicable phase change thermal interface pad |
US6500891B1 (en) | 2000-05-19 | 2002-12-31 | Loctite Corporation | Low viscosity thermally conductive compositions containing spherical thermally conductive particles |
JP2002003830A (en) | 2000-06-26 | 2002-01-09 | Denki Kagaku Kogyo Kk | Highly heat conductive composition and its application |
US6475962B1 (en) | 2000-09-14 | 2002-11-05 | Aos Thermal Compounds, Llc | Dry thermal grease |
US6610635B2 (en) | 2000-09-14 | 2003-08-26 | Aos Thermal Compounds | Dry thermal interface material |
US20030151030A1 (en) | 2000-11-22 | 2003-08-14 | Gurin Michael H. | Enhanced conductivity nanocomposites and method of use thereof |
US20040206941A1 (en) | 2000-11-22 | 2004-10-21 | Gurin Michael H. | Composition for enhancing conductivity of a carrier medium and method of use thereof |
US6573328B2 (en) | 2001-01-03 | 2003-06-03 | Loctite Corporation | Low temperature, fast curing silicone compositions |
MXPA03006498A (en) | 2001-01-22 | 2003-10-15 | Parker Hannifin Corp | Clean release, phase change thermal interface. |
CN1407141A (en) | 2001-03-16 | 2003-04-02 | 希普雷公司 | Tinplating |
CN1260399C (en) | 2001-08-31 | 2006-06-21 | 罗姆和哈斯电子材料有限责任公司 | Electrolytic tin-plating solution and method for electroplating |
FR2831548B1 (en) | 2001-10-31 | 2004-01-30 | Rhodia Chimie Sa | CROSSLINKABLE ADHESIVE SILICONE COMPOSITION COMPRISING AS A THIXOTROPIC AGENT A COMPOUND WITH CYCLIC AMINE FUNCTION CARRIED BY A SILOXANIC CHAIN |
US20030112603A1 (en) | 2001-12-13 | 2003-06-19 | Roesner Arlen L. | Thermal interface |
US6620515B2 (en) | 2001-12-14 | 2003-09-16 | Dow Corning Corporation | Thermally conductive phase change materials |
KR100479857B1 (en) | 2001-12-28 | 2005-03-30 | 제일모직주식회사 | Silicon resin composition for packaging semiconductor |
US6597575B1 (en) | 2002-01-04 | 2003-07-22 | Intel Corporation | Electronic packages having good reliability comprising low modulus thermal interface materials |
US7682690B2 (en) | 2002-02-06 | 2010-03-23 | Parker-Hannifin Corporation | Thermal management materials having a phase change dispersion |
US6946190B2 (en) | 2002-02-06 | 2005-09-20 | Parker-Hannifin Corporation | Thermal management materials |
US6926955B2 (en) | 2002-02-08 | 2005-08-09 | Intel Corporation | Phase change material containing fusible particles as thermally conductive filler |
US7846778B2 (en) | 2002-02-08 | 2010-12-07 | Intel Corporation | Integrated heat spreader, heat sink or heat pipe with pre-attached phase change thermal interface material and method of making an electronic assembly |
US20040149587A1 (en) | 2002-02-15 | 2004-08-05 | George Hradil | Electroplating solution containing organic acid complexing agent |
US20030159938A1 (en) | 2002-02-15 | 2003-08-28 | George Hradil | Electroplating solution containing organic acid complexing agent |
EP1342817A3 (en) | 2002-03-05 | 2006-05-24 | Shipley Co. L.L.C. | Limiting the loss of tin through oxidation in tin or tin alloy electroplating bath solutions |
US6913686B2 (en) | 2002-12-10 | 2005-07-05 | Advanced Technology Materials, Inc. | Methods for analyzing solder plating solutions |
US6815486B2 (en) | 2002-04-12 | 2004-11-09 | Dow Corning Corporation | Thermally conductive phase change materials and methods for their preparation and use |
US20030203181A1 (en) | 2002-04-29 | 2003-10-30 | International Business Machines Corporation | Interstitial material with enhanced thermal conductance for semiconductor device packaging |
US7147367B2 (en) | 2002-06-11 | 2006-12-12 | Saint-Gobain Performance Plastics Corporation | Thermal interface material with low melting alloy |
US20030230403A1 (en) | 2002-06-14 | 2003-12-18 | Webb Brent J. | Conductive thermal interface and compound |
US6791839B2 (en) | 2002-06-25 | 2004-09-14 | Dow Corning Corporation | Thermal interface materials and methods for their preparation and use |
EP1531985A4 (en) | 2002-07-15 | 2008-03-19 | Honeywell Int Inc | Thermal interconnect and interface systems, methods of production and uses thereof |
JP4016326B2 (en) | 2002-08-02 | 2007-12-05 | 石原薬品株式会社 | Electroless tin plating bath |
US6657297B1 (en) | 2002-08-15 | 2003-12-02 | The Bergquist Company | Flexible surface layer film for delivery of highly filled or low cross-linked thermally conductive interface pads |
US6908682B2 (en) | 2002-09-12 | 2005-06-21 | 3M Innovative Properties Company | Photocured silicone sealant having improved adhesion to plastic |
US6783692B2 (en) | 2002-10-17 | 2004-08-31 | Dow Corning Corporation | Heat softening thermally conductive compositions and methods for their preparation |
CN1296994C (en) | 2002-11-14 | 2007-01-24 | 清华大学 | A thermal interfacial material and method for manufacturing same |
FR2848215B1 (en) | 2002-12-04 | 2006-08-04 | Rhodia Chimie Sa | SILICONE ELASTOMER COMPOSITION, ADHESIVE, MONOCOMPONENT AND CROSS-LINKABLE BY POLYADDITION |
US7326042B2 (en) | 2002-12-24 | 2008-02-05 | Bostik Findley, Inc. | Apparatus for packaging hot melt adhesives using a mold and carrier |
JP4288469B2 (en) | 2003-03-12 | 2009-07-01 | 石原薬品株式会社 | Electroless tin plating bath for preventing copper erosion and method for preventing copper erosion |
US20070164424A1 (en) | 2003-04-02 | 2007-07-19 | Nancy Dean | Thermal interconnect and interface systems, methods of production and uses thereof |
US7013965B2 (en) | 2003-04-29 | 2006-03-21 | General Electric Company | Organic matrices containing nanomaterials to enhance bulk thermal conductivity |
US7229683B2 (en) | 2003-05-30 | 2007-06-12 | 3M Innovative Properties Company | Thermal interface materials and method of making thermal interface materials |
US7744991B2 (en) | 2003-05-30 | 2010-06-29 | 3M Innovative Properties Company | Thermally conducting foam interface materials |
TWI251320B (en) | 2003-07-04 | 2006-03-11 | Fuji Polymer Ind | Thermal conductive composition, a heat-dissipating putty sheet and heat-dissipating structure using the same |
KR100981571B1 (en) | 2003-07-26 | 2010-09-10 | 삼성전자주식회사 | System and method for transmitting/receiving signal in mobile communication system using multiple input multiple output adaptive antenna array scheme |
US6985690B2 (en) | 2003-07-31 | 2006-01-10 | Xerox Corporation | Fuser and fixing members containing PEI-PDMS block copolymers |
US6874573B2 (en) | 2003-07-31 | 2005-04-05 | National Starch And Chemical Investment Holding Corporation | Thermal interface material |
JP2005060822A (en) | 2003-08-08 | 2005-03-10 | Rohm & Haas Electronic Materials Llc | Electroplating for composite substrate |
US20050049350A1 (en) | 2003-08-25 | 2005-03-03 | Sandeep Tonapi | Thin bond-line silicone adhesive composition and method for preparing the same |
US8039961B2 (en) | 2003-08-25 | 2011-10-18 | Samsung Electronics Co., Ltd. | Composite carbon nanotube-based structures and methods for removing heat from solid-state devices |
US7550097B2 (en) | 2003-09-03 | 2009-06-23 | Momentive Performance Materials, Inc. | Thermal conductive material utilizing electrically conductive nanoparticles |
US20050072334A1 (en) | 2003-10-07 | 2005-04-07 | Saint-Gobain Performance Plastics, Inc. | Thermal interface material |
WO2005047378A2 (en) | 2003-11-05 | 2005-05-26 | Dow Corning Corporation | Thermally conductive grease and methods and devices in which said grease is used |
US7306823B2 (en) * | 2004-09-18 | 2007-12-11 | Nanosolar, Inc. | Coated nanoparticles and quantum dots for solution-based fabrication of photovoltaic cells |
US20050228097A1 (en) | 2004-03-30 | 2005-10-13 | General Electric Company | Thermally conductive compositions and methods of making thereof |
WO2005111146A1 (en) * | 2004-05-17 | 2005-11-24 | Techno Polymer Co., Ltd. | Thermal conductive resin composition, method for producing same and housing |
EP1751796A1 (en) | 2004-05-20 | 2007-02-14 | General Electric Company, (a New York Corporation) | Organic matrices containing nanomaterials to enhance bulk thermal conductivity |
US20050287362A1 (en) | 2004-06-23 | 2005-12-29 | 3M Innovative Properties Company | Halogen free tapes & method of making same |
US20080302064A1 (en) | 2004-07-13 | 2008-12-11 | Rauch Robert A | Novel Packaging Solution for Highly Filled Phase-Change Thermal Interface Material |
JP5305656B2 (en) | 2004-08-23 | 2013-10-02 | モーメンティブ・パフォーマンス・マテリアルズ・インク | Thermally conductive composition and method for producing the same |
EP1786859B1 (en) | 2004-08-31 | 2011-06-08 | Basf Se | Stabilization of organic materials |
US7850870B2 (en) | 2004-10-28 | 2010-12-14 | Dow Corning Corporation | Conductive curable compositions |
US7328547B2 (en) | 2004-10-29 | 2008-02-12 | Bostik, Inc. | Process for packaging plastic materials like hot melt adhesives |
EP1846480B1 (en) | 2005-02-01 | 2008-10-22 | Dow Corning Corporation | Curable coating compositions |
US7241707B2 (en) | 2005-02-17 | 2007-07-10 | Intel Corporation | Layered films formed by controlled phase segregation |
CN100543103C (en) | 2005-03-19 | 2009-09-23 | 清华大学 | Heat interfacial material and preparation method thereof |
US20060228542A1 (en) | 2005-04-08 | 2006-10-12 | Saint-Gobain Performance Plastics Corporation | Thermal interface material having spheroidal particulate filler |
CN100404242C (en) | 2005-04-14 | 2008-07-23 | 清华大学 | Heat interface material and its making process |
US20060260948A2 (en) | 2005-04-14 | 2006-11-23 | Enthone Inc. | Method for electrodeposition of bronzes |
WO2006117920A1 (en) | 2005-04-28 | 2006-11-09 | Meltex Inc. | Tin plating solution, plating method using the tin plating solution, method for preparing tin plating solution and chip parts having tin plating layer formed by using the tin plating solution |
US20060264566A1 (en) | 2005-05-19 | 2006-11-23 | Wacker Chemical Corporation | HCR room temperature curable rubber composition |
JP2007002002A (en) * | 2005-06-21 | 2007-01-11 | Idemitsu Kosan Co Ltd | Heat conductive resin composition |
US20070051773A1 (en) | 2005-09-02 | 2007-03-08 | Ruchert Brian D | Thermal interface materials, methods of preparation thereof and their applications |
US20070097651A1 (en) | 2005-11-01 | 2007-05-03 | Techfilm, Llc | Thermal interface material with multiple size distribution thermally conductive fillers |
CN1970666A (en) | 2005-11-24 | 2007-05-30 | 鸿富锦精密工业(深圳)有限公司 | Heat-conductive glue |
CN1978582A (en) | 2005-12-09 | 2007-06-13 | 富准精密工业(深圳)有限公司 | Heat-conductive cream and electronic device using same |
US7465605B2 (en) | 2005-12-14 | 2008-12-16 | Intel Corporation | In-situ functionalization of carbon nanotubes |
US7964542B2 (en) * | 2006-01-12 | 2011-06-21 | International Business Machines Corporation | Enhanced thermo-oxidative stability thermal interface compositions and use thereof in microelectronics assembly |
US20070179232A1 (en) | 2006-01-30 | 2007-08-02 | National Starch And Chemical Investment Holding Corporation | Thermal Interface Material |
US7955900B2 (en) | 2006-03-31 | 2011-06-07 | Intel Corporation | Coated thermal interface in integrated circuit die |
TWI313695B (en) | 2006-04-20 | 2009-08-21 | Taiwan Textile Res Inst | Melted-spinning grains containing thermal-stable phase-change polymer and preparation method thereof |
US20080023665A1 (en) | 2006-07-25 | 2008-01-31 | Weiser Martin W | Thermal interconnect and interface materials, methods of production and uses thereof |
US20100197533A1 (en) | 2006-09-05 | 2010-08-05 | 3M Innovative Properties Company | Thermally conductive grease |
JP2008063412A (en) | 2006-09-06 | 2008-03-21 | Showa Denko Kk | Heat-conductive resin composition and sheet |
JP5231236B2 (en) | 2006-10-17 | 2013-07-10 | 電気化学工業株式会社 | Grease |
US7554793B2 (en) | 2006-11-16 | 2009-06-30 | Kemet Electronics Corporation | Low temperature curable conductive adhesive and capacitors formed thereby |
US8431647B2 (en) | 2006-12-27 | 2013-04-30 | Bluestar Silicones France Sas | Adhesive silicone compositions and adhesive bonding/seaming therewith |
EP2115065B1 (en) | 2007-02-20 | 2016-05-11 | Dow Corning Corporation | Filler treating agents based on hydrogen bonding polyorganosiloxanes |
CN101067030A (en) | 2007-03-30 | 2007-11-07 | 广东华南精细化工研究院有限公司 | Composite heat resisting antioxidant for polyolefin and its production process and application |
CN101652459A (en) | 2007-04-02 | 2010-02-17 | 3M创新有限公司 | Thermal grease article and method |
US8431655B2 (en) | 2007-04-09 | 2013-04-30 | Designer Molecules, Inc. | Curatives for epoxy compositions |
GB0707176D0 (en) | 2007-04-16 | 2007-05-23 | Dow Corning | Hydrosilylation curable compositions |
US7462294B2 (en) | 2007-04-25 | 2008-12-09 | International Business Machines Corporation | Enhanced thermal conducting formulations |
WO2008147825A2 (en) | 2007-05-22 | 2008-12-04 | Honeywell International Inc. | Thermal interconnect and interface materials, methods of production and uses thereof |
FR2919615A1 (en) | 2007-08-02 | 2009-02-06 | Bluestar Silicones France Soc | ADHESIVE SILICONE ELASTOMERIC COMPOSITION |
JP5269366B2 (en) | 2007-08-22 | 2013-08-21 | コスモ石油ルブリカンツ株式会社 | Heat-resistant thermal grease |
KR20150043545A (en) | 2007-08-31 | 2015-04-22 | 캐보트 코포레이션 | Thermal interface materials |
US8586650B2 (en) | 2007-09-14 | 2013-11-19 | Henkel US IP LLC | Thermally conductive composition |
JP2009102577A (en) | 2007-10-25 | 2009-05-14 | Polymatech Co Ltd | Thermal conductive composition |
US20090111925A1 (en) | 2007-10-31 | 2009-04-30 | Burnham Kikue S | Thermal interface materials, methods of production and uses thereof |
US8445102B2 (en) | 2007-11-05 | 2013-05-21 | Laird Technologies, Inc. | Thermal interface material with thin transfer film or metallization |
US9795059B2 (en) | 2007-11-05 | 2017-10-17 | Laird Technologies, Inc. | Thermal interface materials with thin film or metallization |
JP5137538B2 (en) | 2007-11-28 | 2013-02-06 | リンテック株式会社 | Adhesive composition, adhesive sheet and method for producing semiconductor device |
JP2009138036A (en) | 2007-12-04 | 2009-06-25 | Momentive Performance Materials Japan Kk | Thermally-conductive silicone grease composition |
US8076773B2 (en) | 2007-12-26 | 2011-12-13 | The Bergquist Company | Thermal interface with non-tacky surface |
CN101910350B (en) * | 2008-01-16 | 2013-01-16 | 日立化成工业株式会社 | Photosensitive adhesive composition, filmy adhesive, adhesive sheet, adhesive pattern, semiconductor wafer with adhesive layer, semiconductor device, and process for producing semiconductor device |
US20090184283A1 (en) | 2008-01-18 | 2009-07-23 | Deborah Duen Ling Chung | Antioxidants for phase change ability and thermal stability enhancement |
US20090215225A1 (en) | 2008-02-24 | 2009-08-27 | Advanced Technology Materials, Inc. | Tellurium compounds useful for deposition of tellurium containing materials |
US8632879B2 (en) | 2008-04-25 | 2014-01-21 | The University Of Kentucky Research Foundation | Lightweight thermal management material for enhancement of through-thickness thermal conductivity |
US10358535B2 (en) | 2008-04-25 | 2019-07-23 | The University Of Kentucky Research Foundation | Thermal interface material |
WO2009136508A1 (en) | 2008-05-08 | 2009-11-12 | 富士高分子工業株式会社 | Heat conductive resin composition |
JP5607298B2 (en) | 2008-07-29 | 2014-10-15 | 株式会社カネカ | Thermal conductive material |
JP5445455B2 (en) | 2008-08-04 | 2014-03-19 | 日立化成株式会社 | Adhesive composition, film adhesive, adhesive sheet and semiconductor device |
US8394746B2 (en) | 2008-08-22 | 2013-03-12 | Exxonmobil Research And Engineering Company | Low sulfur and low metal additive formulations for high performance industrial oils |
EP2194165A1 (en) | 2008-10-21 | 2010-06-09 | Rohm and Haas Electronic Materials LLC | Method for replenishing tin and its alloying metals in electrolyte solutions |
US20100129648A1 (en) | 2008-11-26 | 2010-05-27 | Jun Xu | Electronic packaging and heat sink bonding enhancements, methods of production and uses thereof |
CN101445627A (en) | 2008-12-11 | 2009-06-03 | 上海交通大学 | High-voltage DC cable insulating material and a preparation method thereof |
US8138239B2 (en) | 2008-12-23 | 2012-03-20 | Intel Corporation | Polymer thermal interface materials |
JP5390202B2 (en) | 2009-01-21 | 2014-01-15 | 株式会社カネカ | Heat dissipation structure |
US7816785B2 (en) | 2009-01-22 | 2010-10-19 | International Business Machines Corporation | Low compressive force, non-silicone, high thermal conducting formulation for thermal interface material and package |
KR20110123763A (en) | 2009-02-04 | 2011-11-15 | 다우 코닝 코포레이션 | Method of forming a non-random copolymer |
US9353304B2 (en) | 2009-03-02 | 2016-05-31 | Honeywell International Inc. | Thermal interface material and method of making and using the same |
US8618211B2 (en) | 2009-03-16 | 2013-12-31 | Dow Corning Corporation | Thermally conductive grease and methods and devices in which said grease is used |
JP2010248277A (en) | 2009-04-10 | 2010-11-04 | Panasonic Corp | Heat-conductive resin paste and optical disk device using the same |
WO2010129647A1 (en) | 2009-05-05 | 2010-11-11 | Parker Hannifin Corporation | Thermally conductive foam product |
JP5577553B2 (en) * | 2009-05-27 | 2014-08-27 | 協同油脂株式会社 | Heat dissipation compound composition |
US8081468B2 (en) | 2009-06-17 | 2011-12-20 | Laird Technologies, Inc. | Memory modules including compliant multilayered thermally-conductive interface assemblies |
CN102804367A (en) | 2009-06-19 | 2012-11-28 | 道康宁公司 | Use of ionomeric silicone thermoplastic elastomers in electronic devices |
US8535787B1 (en) | 2009-06-29 | 2013-09-17 | Juniper Networks, Inc. | Heat sinks having a thermal interface for cooling electronic devices |
US20130199724A1 (en) * | 2009-10-09 | 2013-08-08 | Designer Molecules, Inc. | Curatives for epoxy compositions |
JP5463116B2 (en) | 2009-10-14 | 2014-04-09 | 電気化学工業株式会社 | Thermally conductive material |
US9593209B2 (en) | 2009-10-22 | 2017-03-14 | Dow Corning Corporation | Process for preparing clustered functional polyorganosiloxanes, and methods for their use |
US8223498B2 (en) | 2009-11-11 | 2012-07-17 | Juniper Networks, Inc. | Thermal interface members for removable electronic devices |
JP5318733B2 (en) | 2009-11-26 | 2013-10-16 | コスモ石油ルブリカンツ株式会社 | Thermally conductive grease |
GB2508320B (en) | 2009-12-09 | 2014-07-23 | Intel Corp | Polymer thermal interface materials |
TWI475103B (en) | 2009-12-15 | 2015-03-01 | Ind Tech Res Inst | Heat spreader structure |
US20110192564A1 (en) | 2009-12-21 | 2011-08-11 | Saint-Gobain Performance Plastics Corporation | Thermally conductive foam material |
KR101023241B1 (en) * | 2009-12-28 | 2011-03-21 | 제일모직주식회사 | Adhensive composition for semiconductor device and adhensive film using the same |
CN101735619B (en) | 2009-12-28 | 2011-11-09 | 华南理工大学 | Halogen-free flame-retarded heat-conducting organic silicon electronic potting adhesive and preparation method thereof |
JP2011165792A (en) | 2010-02-08 | 2011-08-25 | Teijin Dupont Films Japan Ltd | Biaxially oriented heat dissipating film |
US9771508B2 (en) | 2010-02-23 | 2017-09-26 | Laird Technologies, Inc. | Thermal interface materials including thermally reversible gels |
US9260645B2 (en) | 2010-02-23 | 2016-02-16 | Laird Technologies, Inc. | Thermal interface materials including thermally reversible gels |
JP5738274B2 (en) | 2010-03-15 | 2015-06-24 | 日本化薬株式会社 | Heat-resistant adhesive |
WO2011137360A1 (en) | 2010-04-30 | 2011-11-03 | Indium Corporation | Thermal interface materials with good reliability |
US8308861B2 (en) | 2010-05-13 | 2012-11-13 | E I Du Pont De Nemours And Company | Phase change material compositions |
US8647752B2 (en) | 2010-06-16 | 2014-02-11 | Laird Technologies, Inc. | Thermal interface material assemblies, and related methods |
CN102134474B (en) | 2010-12-29 | 2013-10-02 | 深圳市优宝惠新材料科技有限公司 | Thermal grease composition |
US8917510B2 (en) | 2011-01-14 | 2014-12-23 | International Business Machines Corporation | Reversibly adhesive thermal interface material |
WO2012102852A1 (en) | 2011-01-26 | 2012-08-02 | Dow Corning Corporation | High temperature stable thermally conductive materials |
US8277774B2 (en) | 2011-01-27 | 2012-10-02 | Honeywell International | Method for the preparation of high purity stannous oxide |
US8735574B2 (en) | 2011-03-30 | 2014-05-27 | Infacare Pharmaceutical Corporation | Methods for synthesizing metal mesoporphyrins |
US20120285673A1 (en) | 2011-05-11 | 2012-11-15 | Georgia Tech Research Corporation | Nanostructured composite polymer thermal/electrical interface material and method for making the same |
JP2012241063A (en) * | 2011-05-17 | 2012-12-10 | Nitto Denko Corp | Adhesive sheet for producing semiconductor device |
CN103748171B (en) * | 2011-08-10 | 2016-03-16 | 株式会社艾迪科 | Silicon-containing curable composition and cured article thereof |
JP5687167B2 (en) | 2011-09-27 | 2015-03-18 | コスモ石油ルブリカンツ株式会社 | Heat-resistant thermal grease |
CN103102689B (en) | 2011-11-15 | 2015-04-01 | 佛山市金戈消防材料有限公司 | Organic-silicon pouring sealant composition with high thermal conductivity and application thereof |
EP2780775A4 (en) | 2011-11-15 | 2015-08-26 | Henkel IP & Holding GmbH | Electronic devices assembled with thermally insulating layers |
CN103131138B (en) | 2011-11-23 | 2016-05-11 | 合肥杰事杰新材料股份有限公司 | A kind of thermoplastic polyester composition and preparation method thereof |
CN103254647A (en) | 2012-02-20 | 2013-08-21 | 深圳德邦界面材料有限公司 | Heat-conductive gap interface material and preparation method thereof |
CN102627943A (en) | 2012-04-11 | 2012-08-08 | 北京化工大学常州先进材料研究院 | Moisture/ultraviolet double-curing organic silicon adhesive |
JP5783128B2 (en) | 2012-04-24 | 2015-09-24 | 信越化学工業株式会社 | Heat curing type heat conductive silicone grease composition |
US8937384B2 (en) | 2012-04-25 | 2015-01-20 | Qualcomm Incorporated | Thermal management of integrated circuits using phase change material and heat spreaders |
TWI598385B (en) | 2012-05-10 | 2017-09-11 | 國立清華大學 | Insulated thermal interface material |
JP2014003152A (en) | 2012-06-18 | 2014-01-09 | Dow Corning Toray Co Ltd | Method for forming thermal interface material and heat dissipation structure |
WO2014007119A1 (en) | 2012-07-04 | 2014-01-09 | Dic株式会社 | Heat sealing agent, laminate using same, and solar cell module |
US8587945B1 (en) | 2012-07-27 | 2013-11-19 | Outlast Technologies Llc | Systems structures and materials for electronic device cooling |
JP6440615B2 (en) | 2012-07-30 | 2018-12-19 | ダウ シリコーンズ コーポレーション | Thermally conductive condensation reaction curable polyorganosiloxane composition and method for preparation and use of the composition |
GB201220099D0 (en) | 2012-09-19 | 2012-12-26 | Dow Corning | Production of blend of polyolefin and organopolysiloxane |
JP5944306B2 (en) | 2012-12-21 | 2016-07-05 | コスモ石油ルブリカンツ株式会社 | High thermal conductive grease |
CN103087389B (en) | 2013-01-31 | 2015-06-10 | 合肥工业大学 | High-heat-conductivity high-toughness composite material and preparation method thereof |
CN105102575B (en) | 2013-02-11 | 2017-06-20 | 道康宁公司 | In-situ method for forming heat conduction hot radical curing silicone compositions |
JP5372270B1 (en) | 2013-02-19 | 2013-12-18 | ビッグテクノス株式会社 | Thermal radiation film and thermal radiation adhesive tape |
JP6263042B2 (en) | 2013-02-28 | 2018-01-17 | コスモ石油ルブリカンツ株式会社 | Thermally conductive grease with base oil diffusion prevention performance |
CN103102552A (en) | 2013-03-12 | 2013-05-15 | 泰山体育产业集团有限公司 | Phase-changed heat insulation polyolefin foam material and preparation method thereof |
WO2014160067A1 (en) | 2013-03-14 | 2014-10-02 | Dow Corning Corporation | Thermally curable silicone compositions as temporary bonding adhesives |
US9070660B2 (en) | 2013-03-15 | 2015-06-30 | Intel Corporation | Polymer thermal interface material having enhanced thermal conductivity |
CN103214848B (en) | 2013-04-28 | 2015-07-22 | 深圳市新亚新材料有限公司 | Phase change heat-conducting thermal silicone grease composition for central processing unit (CPU) radiating and preparation method thereof |
CN103333447A (en) | 2013-06-26 | 2013-10-02 | 苏州天脉导热科技有限公司 | Phase-change thermal interface material and preparation method thereof |
KR20160032009A (en) * | 2013-07-16 | 2016-03-23 | 히타치가세이가부시끼가이샤 | Photosensitive resin composition, film adhesive, adhesive sheet, adhesive pattern, semiconductor wafer with adhesive layer, and semiconductor device |
CN103409116B (en) | 2013-07-30 | 2015-07-22 | 深圳德邦界面材料有限公司 | Insulating enhanced heat conduction interface material and preparation method thereof |
CN103436027B (en) | 2013-09-09 | 2015-10-28 | 北京化工大学 | A kind of heat-conduction electric insulation silicon rubber thermal interface material and preparation method thereof |
US20150125646A1 (en) | 2013-11-05 | 2015-05-07 | Espci Innov | Self-Healing Thermally Conductive Polymer Materials |
WO2015068551A1 (en) * | 2013-11-08 | 2015-05-14 | リンテック株式会社 | Protective film forming composition, protective film forming sheet, and chip provided with protective film |
JP2015097134A (en) * | 2013-11-15 | 2015-05-21 | 日東電工株式会社 | Suspension substrate with circuit |
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Cited By (7)
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US10501671B2 (en) | 2016-07-26 | 2019-12-10 | Honeywell International Inc. | Gel-type thermal interface material |
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US11072706B2 (en) | 2018-02-15 | 2021-07-27 | Honeywell International Inc. | Gel-type thermal interface material |
US11373921B2 (en) | 2019-04-23 | 2022-06-28 | Honeywell International Inc. | Gel-type thermal interface material with low pre-curing viscosity and elastic properties post-curing |
WO2023154375A1 (en) * | 2022-02-09 | 2023-08-17 | Henkel Ag & Co. Kgaa | Low thermal resistance phase change thermal interface material |
Also Published As
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EP3166999A4 (en) | 2018-03-07 |
MX2016016984A (en) | 2017-05-03 |
CN106536609B (en) | 2022-04-29 |
WO2016004565A1 (en) | 2016-01-14 |
JP6401310B2 (en) | 2018-10-10 |
CN106536609A (en) | 2017-03-22 |
HUE061592T2 (en) | 2023-07-28 |
CA2951437A1 (en) | 2016-01-14 |
JP2017528538A (en) | 2017-09-28 |
PL3166999T3 (en) | 2023-07-03 |
KR20170031100A (en) | 2017-03-20 |
BR112016029690A2 (en) | 2017-08-22 |
US10428257B2 (en) | 2019-10-01 |
EP3166999B1 (en) | 2023-03-08 |
EP3166999A1 (en) | 2017-05-17 |
CA2951437C (en) | 2022-03-15 |
KR102282332B1 (en) | 2021-07-27 |
US10155894B2 (en) | 2018-12-18 |
US20170137685A1 (en) | 2017-05-18 |
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