CN103620778B - 倒装芯片、正面和背面中心键合存储线键合组件 - Google Patents

倒装芯片、正面和背面中心键合存储线键合组件 Download PDF

Info

Publication number
CN103620778B
CN103620778B CN201280030801.1A CN201280030801A CN103620778B CN 103620778 B CN103620778 B CN 103620778B CN 201280030801 A CN201280030801 A CN 201280030801A CN 103620778 B CN103620778 B CN 103620778B
Authority
CN
China
Prior art keywords
microelectronic element
micromodule
lead
microelectronic
edge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201280030801.1A
Other languages
English (en)
Other versions
CN103620778A (zh
Inventor
贝尔加桑·哈巴
理查德·德威特·克里斯普
韦勒·佐尼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Adeia Semiconductor Solutions LLC
Original Assignee
Tessera LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tessera LLC filed Critical Tessera LLC
Publication of CN103620778A publication Critical patent/CN103620778A/zh
Application granted granted Critical
Publication of CN103620778B publication Critical patent/CN103620778B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/50Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/10Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/12Mountings, e.g. non-detachable insulating substrates
    • H01L23/13Mountings, e.g. non-detachable insulating substrates characterised by the shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H01L23/3128Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0652Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next and on each other, i.e. mixed assemblies
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657Stacked arrangements of devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/10Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/105Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L27/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/0401Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05599Material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05599Material
    • H01L2224/056Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624Aluminium [Al] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05599Material
    • H01L2224/056Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05644Gold [Au] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05599Material
    • H01L2224/056Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05647Copper [Cu] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05599Material
    • H01L2224/056Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05655Nickel [Ni] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/061Disposition
    • H01L2224/0612Layout
    • H01L2224/0613Square or rectangular array
    • H01L2224/06134Square or rectangular array covering only portions of the surface to be connected
    • H01L2224/06135Covering only the peripheral area of the surface to be connected, i.e. peripheral arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/061Disposition
    • H01L2224/0612Layout
    • H01L2224/0613Square or rectangular array
    • H01L2224/06134Square or rectangular array covering only portions of the surface to be connected
    • H01L2224/06136Covering only the central area of the surface to be connected, i.e. central arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13099Material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13099Material
    • H01L2224/131Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16227Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16245Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/291Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/2919Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H01L2224/29191The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32135Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/32227Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the layer connector connecting to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48095Kinked
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48145Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/4824Connecting between the body and an opposite side of the item with respect to the body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/4826Connecting between the body and an opposite side of the item with respect to the body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/4847Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4911Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4911Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49112Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting a common bonding area on the semiconductor or solid-state body to different bonding areas outside the body, e.g. diverging wires
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4912Layout
    • H01L2224/49175Parallel arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73215Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73253Bump and layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503Stacked arrangements of devices
    • H01L2225/0651Wire or wire-like electrical connections from device to substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503Stacked arrangements of devices
    • H01L2225/06555Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
    • H01L2225/06562Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking at least one device in the stack being rotated or offset
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503Stacked arrangements of devices
    • H01L2225/06575Auxiliary carrier between devices, the carrier having no electrical connection structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503Stacked arrangements of devices
    • H01L2225/06589Thermal management, e.g. cooling
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/10All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
    • H01L2225/1005All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/1011All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
    • H01L2225/1017All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement the lowermost container comprising a device support
    • H01L2225/1023All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement the lowermost container comprising a device support the support being an insulating substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/10All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
    • H01L2225/1005All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/1011All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
    • H01L2225/1017All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement the lowermost container comprising a device support
    • H01L2225/1029All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement the lowermost container comprising a device support the support being a lead frame
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/10All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
    • H01L2225/1005All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/1011All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
    • H01L2225/1047Details of electrical connections between containers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/10All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
    • H01L2225/1005All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/1011All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
    • H01L2225/1047Details of electrical connections between containers
    • H01L2225/1052Wire or wire-like electrical connections
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/10All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
    • H01L2225/1005All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/1011All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
    • H01L2225/1047Details of electrical connections between containers
    • H01L2225/1058Bump or bump-like electrical connections, e.g. balls, pillars, posts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/10All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
    • H01L2225/1005All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/1011All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
    • H01L2225/1047Details of electrical connections between containers
    • H01L2225/107Indirect electrical connections, e.g. via an interposer, a flexible substrate, using TAB
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H01L23/49816Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01049Indium [In]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/0105Tin [Sn]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01076Osmium [Os]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01087Francium [Fr]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/014Solder alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701Low temperature co-fired ceramic [LTCC]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/102Material of the semiconductor or solid state bodies
    • H01L2924/1025Semiconducting materials
    • H01L2924/10251Elemental semiconductors, i.e. Group IV
    • H01L2924/10253Silicon [Si]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/102Material of the semiconductor or solid state bodies
    • H01L2924/1025Semiconducting materials
    • H01L2924/1026Compound semiconductors
    • H01L2924/1032III-V
    • H01L2924/10329Gallium arsenide [GaAs]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1205Capacitor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1206Inductor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1207Resistor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • H01L2924/143Digital devices
    • H01L2924/1431Logic devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • H01L2924/143Digital devices
    • H01L2924/1433Application-specific integrated circuit [ASIC]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • H01L2924/143Digital devices
    • H01L2924/1434Memory
    • H01L2924/1435Random access memory [RAM]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • H01L2924/143Digital devices
    • H01L2924/1434Memory
    • H01L2924/1435Random access memory [RAM]
    • H01L2924/1436Dynamic random-access memory [DRAM]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • H01L2924/143Digital devices
    • H01L2924/1434Memory
    • H01L2924/1435Random access memory [RAM]
    • H01L2924/1437Static random-access memory [SRAM]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • H01L2924/143Digital devices
    • H01L2924/1434Memory
    • H01L2924/1435Random access memory [RAM]
    • H01L2924/1438Flash memory
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • H01L2924/143Digital devices
    • H01L2924/1434Memory
    • H01L2924/1435Random access memory [RAM]
    • H01L2924/1443Non-volatile random-access memory [NVRAM]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • H01L2924/143Digital devices
    • H01L2924/1434Memory
    • H01L2924/145Read-only memory [ROM]
    • H01L2924/1451EPROM
    • H01L2924/14511EEPROM
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/1515Shape
    • H01L2924/15151Shape the die mounting substrate comprising an aperture, e.g. for underfilling, outgassing, window type wire connections
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/15165Monolayer substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/1517Multilayer substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/1517Multilayer substrate
    • H01L2924/15172Fan-out arrangement of the internal vias
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/1517Multilayer substrate
    • H01L2924/15182Fan-in arrangement of the internal vias
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1532Connection portion the connection portion being formed on the die mounting surface of the substrate
    • H01L2924/1533Connection portion the connection portion being formed on the die mounting surface of the substrate the connection portion being formed both on the die mounting surface of the substrate and outside the die mounting surface of the substrate
    • H01L2924/15331Connection portion the connection portion being formed on the die mounting surface of the substrate the connection portion being formed both on the die mounting surface of the substrate and outside the die mounting surface of the substrate being a ball array, e.g. BGA
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/156Material
    • H01L2924/157Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/156Material
    • H01L2924/15786Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787Ceramics, e.g. crystalline carbides, nitrides or oxides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/156Material
    • H01L2924/15786Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15788Glasses, e.g. amorphous oxides, nitrides or fluorides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/156Material
    • H01L2924/1579Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
    • H01L2924/19107Disposition of discrete passive components off-chip wires
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3011Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Wire Bonding (AREA)
  • Manufacturing & Machinery (AREA)

Abstract

一种微电子组件10可以包括具有第一表面34、第二表面58、在其间延伸的孔39以及端子36的衬底30。组件10还可以包括具有面对第一表面34的前表面16的第一微电子元件12、具有突出于第一微电子元件的边缘29之外的前表面22的第二微电子元件14、将微电子元件的触点20、52电连接到端子的第一引线70和第二引线76、以及将第一微电子元件的触点和第二微电子元件的触点电互连的第三引线73。第一微电子元件的触点20可以设置为邻近边缘29。第二微电子元件14的触点26可以设置在其前表面22的中心区域19中。引线70、76、99可以具有与孔39对齐的部分。

Description

倒装芯片、正面和背面中心键合存储线键合组件
相关申请的交叉引用
本申请要求2011年4月21日申请的美国临时专利申请号No.61/477,967以及2011年11月29日申请的美国专利申请号No.13/306,099的权益,其公开内容通过引用并入本文。以下通过引用并入本文的共同所有的申请包括:2011年4月21日申请的美国临时专利申请号No.61/477,820、No.61/477,877以及No.61/477,883。
技术领域
本发明涉及堆叠微电子组件以及制造这种组件的方法,以及用于这种组件的部件。
背景技术
半导体芯片通常设为单独的预封装单元。标准芯片具有带有大的前面的扁平矩形体,该前面具有连接到芯片的内部电路的触点。每个单独的芯片典型地安装在封装中,封装再安装在电路板例如印刷电路板上,封装将芯片的触点连接到电路板的导体。在很多常规的设计中,芯片封装在电路板中占用的面积比芯片本身的面积大很多。如参考具有前面的扁平芯片的本公开中所使用的,“芯片的面积”应被理解为指的是所述前面的面积。在“倒装芯片”设计中,芯片的前面面对封装衬底的面,即,通过焊球或其他连接元件将芯片载体与芯片上的触点直接键合到芯片载体的触点。通过覆盖芯片的前面的端子又可以将芯片载体键合到电路板。“倒装芯片”设计提供相对紧凑的布置;每个芯片占用的电路板的面积等于或稍大于芯片的前面的面积,例如在共同转让的美国专利5,148,265、5,148,266和5,679,977中的某些实施例中所公开的,其全部公开内容通过引用并入本文。
某些创新的安装技术提供的紧密度接近或等于常规倒装芯片键合的紧密度。可以在等于或稍大于芯片本身的面积的、电路板的面积中容置单个芯片的封装通常被称为“芯片级封装”。
除了最小化被微电子组件占用的电路板的平面面积,还需要生产一种垂直于电路板平面的整体高度或尺寸较小的芯片封装。这种薄的微电子封装允许将其中安装有封装的电路板紧挨着相邻结构放置,由此产生包含电路板的产品的整体尺寸。已经提出用于在单个封装或模块中设置多个芯片的多种提议。在常规的“多芯片模块”中,芯片并排地安装在单个封装衬底上,然后可以将该封装衬底安装至电路板。这种方法只是提供芯片所占用的电路板的总面积的有限减小。总面积仍然大于模块中各个芯片的总表面积。
还已经提出将多个芯片封装在“堆叠”布置(即多个芯片放置成一个在另一个之上的布置)中。在堆叠布置中,可以将多个芯片安装在比芯片的总面积小的电路板的面积中。例如,在上述的美国专利5,679,977、5,148,265以及5,347,159的某些实施例中公布了一些堆叠芯片布置,其全部公开内容通过引用并入本文。也通过引用并入本文的美国专利No.4,941,033公开一种布置,其中芯片一个在另一个之上地堆叠,且通过与芯片相关联的所谓的“布线膜”上的导体彼此互连。
除了现有技术的这些努力,需要对用于具有基本位于芯片的中心区域的触点的芯片的多芯片封装的情况进一步改进。某些半导体芯片,例如一些存储芯片,通常具有基本沿芯片的中心轴设置的一行或两行触点。
发明内容
本发明涉及微电子组件和制造这种组件的方法。根据本发明的方面,微电子组件可以包括:具有相对地面对的第一表面和第二表面以及在第一表面和第二表面之间延伸的孔的衬底;具有面对衬底第一表面的前表面的第一微电子元件;以及具有面对第一微电子元件的前表面的第二微电子元件。衬底可以具有暴露在其第二表面的第一端子。第一微电子元件还可以具有远离前表面的后表面,以及在前表面和后表面之间延伸的边缘。第一微电子元件可以具有暴露在其前表面处且邻近第一微电子元件的边缘的多个触点。第二微电子元件可以具有相对的第一边缘和第二边缘。第二微电子元件的前表面可以在第一边缘和第二边缘之间延伸。
第二微电子元件可以具有设置在其前表面的中心区域且远离第一边缘和第二边缘的多个触点。第二微电子元件的前表面可以突出于第一微电子元件的边缘之外。微电子组件还可以包括将第一微电子元件的触点电连接到第一端子的第一引线以及将第二微电子元件的触点连接到第一端子的第二引线。第一引线和第二引线可以具有与孔对齐的部分。微电子组件还可以包括暴露在与衬底的第二表面相对的微电子组件的表面处的第二端子。至少一些第二端子可以覆盖至少一个微电子元件。
在一个实施例中,至少一些第二端子可以通过线键合与暴露在衬底的第一表面处的导电元件电连接。在特定示例中,微电子组件还可以包括至少部分覆盖第一微电子元件和第二微电子元件以及至少部分的线键合的密封剂。第二端子暴露在其处的微电子组件的表面可以是密封剂的表面。在一个示例中,线键合可以具有附接至导电元件的基座和远离导电元件的未密封端表面,以及在基座和未密封端表面之间延伸的边缘表面。未密封端表面可以不被密封剂覆盖。第二端子可以与未密封端表面电连接。在示例性实施例中,至少一个线键合的至少部分边缘表面可以是未密封的,至少一个第二端子可以与至少一个线键合的未密封边缘表面和未密封端表面电连接。
在特定的实施例中,线键合可以具有位于附接至导电元件的线键合的基座和远离导电元件的线键合的端部之间的未密封边缘表面。第二端子可以与未密封边缘表面电连接。在一个实施例中,至少一个微电子元件可以包括易失性随机存取存储器(RAM),至少一个微电子元件可以包括非易失性闪存。在示例性实施例中,微电子组件还可以包括将第一微电子元件的触点与第二微电子元件的触点电互连的第三引线。第一引线、第二引线和第三引线可以具有与孔对齐的部分。在一个示例中,第一引线或第二引线中的至少一个可以包括从第一微电子元件或第二微电子元件中的至少一个的触点延伸的线键合。
在特定的示例中,第一引线和第二引线的至少一个的与孔对齐的部分可以是单片导电元的部分,单片导电元件具有沿衬底延伸到端子的第二部分。在示例性实施例中,微电子组件还可以包括第二微电子元件的前表面和衬底的第一表面之间的间隔元件。在一个示例中,第一微电子元件可以包括用于主要执行逻辑功能的芯片。在特定的实施例中,第二微电子元件可以具有比提供任何其它功能的有源装置更多的有源装置以提供存储器存储阵列功能。在一个实施例中,第一微电子元件可以具有比提供任何其它功能的有源装置更多的有源装置以提供存储器存储阵列功能。在示例性实施例中,微电子组件还可以包括将第一微电子元件的触点电连接到端子的第三引线。第一引线和第三引线可以连接到孔的相对侧上的端子。第一引线、第二引线和第三引线可以具有与孔对齐的部分。
在一个示例中,微电子组件还可以包括设置在衬底的第一表面和第二微电子元件的前表面之间的第三微电子元件,将第三微电子元件的触点电连接到端子的第三引线,以及将第一微电子元件的触点和第三微电子元件的触点电互连的第四引线。第三微电子元件可以具有相对的第一边缘和第二边缘、在第一边缘和第二边缘之间延伸的前表面,以及设置在其前表面上且邻近其第一边缘的多个触点。第三微电子元件的前表面可以面对衬底的第一表面。第一微电子元件的触点和第三微电子元件的触点可以位于孔的相对侧上。第一引线、第二引线、第三引线和第四引线可以具有与孔对齐的部分。在示例性实施例中,微电子组件还可以包括将第一微电子元件的触点和第二微电子元件的触点电互连的第五引线。在特定的实施例中,微电子组件还可以包括将第二微电子元件的触点和第三微电子元件的触点电互连的第六引线。
在一个实施例中,微电子部件可以包括如上所述的第一微电子组件和第二微电子组件。第一微电子组件可以至少部分地覆盖第二微电子组件。第一微电子组件的第一端子可以与第二微电子组件的第二端子接合。在示例性实施例中,至少一个第一微电子元件可以主要用于执行逻辑功能。至少一个第二微电子元件可以具有比提供任何其它功能的有源装置更多的有源装置以提供存储器存储阵列功能。在特定的实施例中,第一微电子组件的至少一些第一端子和第二微电子组件的至少一些第二端子可以布置成面阵。第一微电子组件和第二微电子组件可以通过接合单元接合,接合单元是烧结金属的导电块。
在示例性实施例中,微电子组件可以通过邻近微电子部件的外围布置的接合单元彼此电互连。在一个示例中,接合单元可以位于微电子部件的非密集中心区域的外侧。在特定的实例中,系统可以包括如上所述的微电子组件以及电连接到微电子组件的一个或多个其他电子部件。在特定的实施例中,至少一些端子可以电连接到电路板。在一个示例中,系统还可以包括壳体,微电子组件和其他电子部件安装到该壳体。
根据本发明的另一方面,微电子组件可以包括衬底,该衬底具有相对地面对的第一表面和第二表面以及在第一表面和第二表面之间延伸的孔;第一微电子元件,该第一微电子元件具有面对衬底第一表面的前表面;以及第二微电子元件,该第二微电子元件具有面对第一微电子元件的前表面。衬底可以具有端子。第一微电子元件还可以包括远离前表面的后表面以及在前表面和后表面之间延伸的边缘。第一微电子元件可以具有暴露在其前表面处且邻近第一微电子元件的边缘的多个端子。第二微电子元件可以具有相对的第一边缘和第二边缘。第二微电子元件的前表面可以在第一边缘和第二边缘之间延伸。
第二微电子元件可以具有设置在其前表面的中心区域且远离第一边缘和第二边缘的多个触点。第二微电子元件的前表面可以突出于第一微电子元件的边缘之外。微电子组件还可以包括将第一微电子元件的触点电连接到端子的第一引线,将第二微电子元件的触点电连接到端子的第二引线以及将第一微电子元件的触点与第二微电子元件的触点电互连的第三引线。第一引线、第二引线和第三引线可以具有与孔对齐的部分。
在示例性实施例中,第一引线或第二引线中的至少一个可以包括从第一微电子元件或第二微电子元件中的至少一个的触点延伸的线键合。在一个实施例中,第一引线和第二引线中的至少一个的与孔对齐的部分可以是单片导电元件的部分,单片导电元件具有沿衬底延伸到端子的第二部分。在特定的实施例中,微电子组件还可以包括第二微电子元件的前表面和衬底的第一表面之间的间隔元件。在特定的实施例中,第一微电子元件可以包括用于主要执行逻辑功能的芯片。在示例性实施例中,第二微电子元件可以具有比提供任何其它功能的有源装置更多的有源装置以提供存储器存储阵列功能。在一个实施例中,第一微电子元件可以具有比提供任何其它功能的有源装置更多的有源装置以提供存储器存储阵列功能。
本发明的另外的方面可以提供将根据本发明的上述方面的微电子组件与电连接至其的其它电子部件相结合的系统。例如,端子可以电连接到电路板。在另一示例中,系统可以设置在单个壳体中和/或安装到单个壳体,该壳体可以是便携式壳体。根据本发明的这个方面的优选实施例的系统可以比可比较的常规系统更紧凑。
在一个实施例中,微电子部件可以包括如上所述的第一微电子组件和第二微电子组件。第一微电子组件可以与第二微电子组件电连接并可以至少部分地覆盖第二微电子组件。在示例性实施例中,微电子组件可以通过布置在邻近微电子部件的外围处的接合单元彼此电连接。在特定的实施例中,接合单元可以位于微电子部件的非密集中心区域的外侧。在一个实施例中,一些微电子元件可以包括易失性随机存取存储器(RAM),一些微电子元件可以包括非易失性闪存。在特定的实施例中,第一微电子元件的至少一个可以主要用于执行逻辑功能,第二微电子元件的至少一个可以具有比提供任何其它功能的有源装置更多的有源装置以提供存储器存储阵列功能。
根据本发明的又另一方面,微电子组件可以包括:衬底,该衬底具有相对地面对的第一表面和第二表面以及在第一表面和第二表面之间延伸的孔;第一微电子元件,该第一微电子元件具有面对衬底的第一表面的前表面;以及第二微电子元件,该第二微电子元件具有面对第一微电子元件的前表面。衬底可以具有端子。第一微电子元件还可以包括远离前表面的后表面以及在前表面和后表面之间延伸的边缘。第一微电子元件可以具有暴露在其前表面处且邻近第一微电子元件的边缘的多个触点。第二微电子元件可以具有相对的第一边缘和第二边缘。第二微电子元件的前表面可以在第一边缘和第二边缘之间延伸。
第二微电子元件可以具有设置在其远离第一边缘和第二边缘的前表面的中心区域中的多个触点。第二微电子元件的前表面可以突出于第一微电子元件的边缘之外。微电子组件还可以包括将第一微电子元件的触点电连接到端子的第一引线,将第二微电子元件的触点连接到端子的第二引线,以及将第一微电子元件的触点电连接到端子的第三引线。第一引线和第三引线可以连接到孔的相对侧上的端子。第一引线、第二引线和第三引线可以具有与孔对齐的部分。
在特定的实施例中,第一微电子元件可以包括用于主要执行逻辑功能的芯片。在示例性实施例中,第二微电子元件可以具有比提供任何其它功能的有源装置更多的有源装置以提供存储器存储阵列功能。在一个实施例中,第一微电子元件可以具有比提供任何其它功能的有源装置更多的有源装置以提供存储器存储阵列功能。
根据本发明的再另一方面,微电子组件可以包括:衬底,该衬底具有相对地面对的第一表面和第二表面以及在第一和第二表面之间延伸的孔;第一微电子元件,该第一微电子元件具有面对衬底的第一表面的前表面;第二微电子元件,该第二微电子元件具有面对第一微电子元件的前表面;以及第三微电子元件,该第三微电子元件设置在衬底的第一表面和第二微电子元件的前表面之间。衬底可以具有端子。
第一微电子元件还可以包括远离前表面的后表面以及在前表面和后表面之间延伸的边缘。第一微电子元件可以具有暴露在其前表面处且邻近第一微电子元件的边缘的多个触点。第二微电子元件可以具有相对的第一边缘和第二边缘。第二微电子元件的前表面可以在第一边缘和第二边缘之间延伸。第二微电子元件可以具有设置在其前表面的远离第一边缘和第二边缘的中心区域中的多个触点。第二微电子元件的前表面可以突出于第一微电子元件的边缘之外。第三微电子元件可以具有相对的第一边缘和第二边缘、在第一边缘和第二边缘之间延伸的前表面以及设置在前表面处且邻近其第一边缘的多个触点。第三微电子元件的前表面可以面对衬底的第一表面。
微电子组件还可以包括将第一微电子元件的触点电连接到端子的第一引线,将第二微电子元件的触点连接到端子的第二引线,将第三微电子元件的触点电连接到端子的第三引线以及将第一微电子元件的触点和第三微电子元件的触点电互连的第四引线。第一微电子元件的触点和第三微电子元件的触点可以位于孔的相对侧上。第一引线、第二引线、第三引线和第四引线可以具有与孔对齐的部分。
在一个实施例中,微电子组件还可以包括将第一微电子元件的触点和第二微电子元件的触点电互连的第五引线。在特定的实施例中,微电子组件还可以包括将第二微电子元件的触点和第三微电子元件的触点电互连的第六引线。在特定的实施例中,第一微电子元件可以包括用于主要执行逻辑功能的芯片。在示例性的实施例中,第二微电子元件可以具有比提供任何其它功能的有源装置更多的有源装置以提供存储器存储阵列功能。在一个实施例中,第一微电子元件可以具有比提供任何其它功能的有源装置更多的有源装置以提供存储器存储阵列功能。
附图说明
现在将参考附图描述本发明的各个实施例。需要理解的是,这些附图仅描述本发明的一些实施例,因此不应作为对本发明范围的限制。
图1A是根据本发明的实施例的堆叠微电子组件的示意性截面正视图;
图1B是根据本发明的实施例的堆叠微电子组件的示意性截面正视图;
图1C是根据本发明的实施例的堆叠微电子组件的部分剖视图;
图2是图1A所示的微电子组件的俯视图;
图3A是根据本发明的另一实施例的堆叠微电子组件的示意性截面正视图;
图3B是进一步示出图3A中描述的实施例的部分剖视图;
图4是根据本发明的又一实施例的堆叠微电子组件的示意性截面正视图;
图5是示出图4所示的堆叠微电子组件的部分的剖视图;
图6是根据本发明的实施例的堆叠微电子组件的示意性截面正视图;
图7是根据本发明的另一实施例的堆叠微电子组件的示意性截面正视图;
图8是根据本发明的又一实施例的堆叠微电子组件的示意性截面正视图;
图9A是根据本发明的另一实施例的堆叠微电子组件的示意性截面正视图;
图9B是图9A所示的堆叠微电子组件的俯视图;
图10是根据本发明的又另一实施例的堆叠微电子组件的示意性截面正视图;以及
图11是根据本发明的一个实施例的系统的示意图。
具体实施方式
参考图1A和图2,根据本发明的实施例的堆叠微电子组件10包括第一微电子元件12和第二微电子元件14,第一微电子元件12背面放置且面对衬底30,第二微电子元件14背面放置且覆盖第一微电子元件12的至少部分。在一些实施例中,第一微电子元件12和第二微电子元件14可以是半导体芯片,或是包括半导体芯片的元件,该半导体芯片具有在其前表面16处的触点。半导体芯片可以是半导体材料(例如硅或砷化镓)的薄片,并且可被设置为独立的预封装单元。半导体芯片可以是半导体材料(例如硅或砷化镓)的薄片,并且可被设置为独立的预封装单元。半导体芯片可以配备有有源电路元件(例如,晶体管、二极管等),或无源电路元件(例如电阻、电容或电感等),或有源和无源电路元件的结合。在“有源”半导体芯片中,每个微电子元件中的有源电路元件典型地在一个或多个“集成电路”中电连接在一起。第一微电子元件和第二微电子元件都可如下文中讨论的电连接至衬底30。衬底30可再通过其表面处的端子36电连接至电路板,例如印刷电路板。在特定实施例中,微电子组件10可为具有用于与电路板(例如印刷电路板等)的面上的相应触点电连接的端子的微电子“封装”。
在特定实施例中,衬底可为各种结构的介质元件,例如聚合材料或无机材料(例如陶瓷或玻璃)的介质元件,衬底具有在其上的导电元件,例如端子以及与端子电连接的导电元件(例如迹线、衬底触点或与其他导电元件)。在另一示例中,衬底可基本由半导体材料(例如硅)组成,或者可选地包括半导体材料层及其一个或多个介质层。这种衬底可具有低于百万分之七每摄氏度(“7ppm/℃”)的热膨胀系数。在又一个实施例中,衬底可为具有引脚的引线框架,其中端子可以为引脚的部分,例如引脚的端部。在又一个实施例中,衬底可为具有引线的引线框架,其中端子可为引线的部分,例如引线的端部。
第一微电子元件12可以包括主要用于执行逻辑功能的半导体芯片,例如微处理器、特定用途集成电路(ASIC)、现场可编程门阵列(FPGA)或其他逻辑芯片等。在特定的实施例中,微电子元件12可以是控制器或主要提供逻辑功能但也可以包括存储器存储阵列的芯片上系统(SOC)。在其他示例中,第一微电子元件12可以包括或是存储芯片(例如,闪存(“或非”或“与非”)芯片、动态随机存取存储(DRAM)芯片或静态随机存取存储(SRAM)芯片),或是主要用于执行一些其他功能。这种存储芯片包括存储器存储阵列,并典型地具有比提供任何其它功能的有源电路元件更多的有源电路元件(例如,有源装置,如晶体管)以提供存储器存储阵列功能。第一微电子元件12具有前表面16,远离前表面的后面18,以及在前表面和后表面之间延伸的第一边缘27和第二边缘29。电触点20暴露在第一微电子元件12的前表面处且邻近第二边缘29。如本发明所使用的,导电元件“暴露在”结构的表面处的描述表示导电元件可用于与在与介质结构的表面垂直的方向上从介质结构的外部朝介质结构的表面移动的理论点接触。因此,暴露在结构的表面处的端子或其他导电元件可从这样的表面突出;可与这样的表面平齐;或者可相对于这样的表面凹入并通过介质结构中的孔或凹入部暴露。电触点20可包括键合焊盘或其他导电结构(例如凸点、接线柱等)。键合焊盘可以包括一种或多种金属(例如铜、镍、金或铝),并且可以为大约0.5μm厚。键合焊盘的大小可随着装置类型的改变而改变,但其一侧将典型地为几十微米到几百微米。
第二微电子元件14具有前表面22,远离前表面的后表面24,在前表面和后表面之间延伸的第一边缘35和第二边缘37以及暴露在前表面22处的触点26。如图1A所示,第一微电子元件12和第二微电子元件14相互堆叠,以便第二微电子元件14的至少部分覆盖第一微电子元件12的至少部分。在特定的实施例中,如图1A所示,第二微电子元件14的前表面22包括第一端区域21和第二端区域23以及在第一端区域21和第二端区域23之间延伸的中心区域19。第一端区域21在中心区域19和第一边缘35之间延伸,第二端区域23在中心区域19和第二边缘37之间延伸。中心区域可延伸第二微电子元件14的第一边缘35和第二边缘37之间的距离的三分之一,第一端区域和第二端区域可分别延伸边缘35和边缘37之间的距离的三分之一。电触点26暴露在第二微电子元件14的前表面22处。例如,触点26可布置成邻近前表面22的中心的一行或平行的两行。第二微电子元件14可包括或者可为DRAM芯片。这种DRAM芯片包括存储器存储阵列,并典型地具有比提供任何其它功能的有源电路元件更多的有源电路元件(例如,有源装置,如晶体管)以提供存储器存储阵列功能。第二微电子元件14的中心区域19的至少部分突出于第一微电子元件12的第二边缘29之外,以便第二微电子元件14的触点26暴露在第一微电子元件12的第二边缘29之外。如上所讨论的,在一个实施例中,衬底30可包括具有相对地面对的第一表面34和第二表面32的介质层。一个或多个导电元件或端子36暴露在衬底30的第二表面32处。在特定实施例中,一些或全部端子36可以关于第一微电子元件12和/或第二微电子元件14是可移动的。
衬底30进一步包括在其相对的第一表面和第二表面之间(例如,在介质元件30的相对面对的第一表面和第二表面之间)延伸的一个或多个孔。在图1A所示的实施例中,衬底30包括孔39和与衬底30的孔39对齐的至少一些触点26。多条引线将第二微电子元件的触点26与微电子组件的端子36电连接。引线具有与孔39对齐的部分。例如,引线可包括键合至衬底触点的线键合52,衬底触点再通过引线的其他部分(例如,沿半导体元件或介质元件30延伸的金属迹线)连接至端子36,或者如果衬底包括引线框架,引线可包括其引脚的部分。
介质元件30的第一表面34可以与第一微电子元件12的前表面16并列。如图1A所示,衬底30可以延伸至第一微电子元件12的第一边缘27和第二微电子元件14的第二边缘35之外。在示例中,包括介质材料的衬底可称作“介质元件”30,无论其是部分地还是全部地由任何合适的介质材料制成。衬底30可以部分地或全部地由任何合适的介质材料制成。例如,衬底30可以包括柔性材料层,例如聚酰亚胺层、BT树脂层或通常用于制造带式自动键合(TAB)带的其他介质材料层。可选地,衬底30可包括相对刚性的板状材料,例如纤维增强环氧树脂的厚层,例如,Fr-4板或Fr-5板。不论使用何种材料,衬底30可由单个层或多个层组成。
返回图1A,间隔元件或支撑元件31可放置在第二微电子元件14的第一端区域21和介质元件30的一部分之间。间隔元件31可帮助将第二微电子元件支撑在衬底30的上方。这种间隔元件31可以由例如介质材料(例如硅二极管或其他材料)、半导体材料(例如硅)、或一层或多层的粘合剂或其他聚合材料制成。在特定实施例中,间隔元件可以包括金属或由金属制成。如果间隔元件包括粘合剂,粘合剂可以将第二微电子元件14连接至衬底30。在一个实施例中,间隔元件31在基本垂直于衬底的第一表面34的竖直方向可具有与第一微电子元件12的前表面16和后表面18之间的第一微电子元件12的厚度基本相等的厚度。如图1所示,如果间隔元件31包括粘合剂,该粘合剂可将第二微电子元件14连接至介质元件30。
如图1A和图2所示,衬底30还可以包括导电元件或衬底触点40以及暴露在第二表面32上的导电迹线25。导电迹线25将衬底触点40电联接至端子36。可以使用共同转让的美国申请公开No.2005/0181544中示出的方法来产生迹线25和衬底触点40,其公开内容通过引用并入本文。
回到图1A,间隔元件或支撑元件31(如粘合层)可以放置在第二微电子元件14的第一端区域21和衬底30的一部分之间。如果间隔元件31包括粘合剂,该粘合剂可以将第二微电子元件14连接到衬底30。如图1A所示,第二微电子元件14的第二端区域23可以通过键合材料60(例如可热传导的粘合剂60)键合到第一微电子元件12的第二端区域17。同样地,键合材料61,例如粘合剂(可选地,热传导的粘合剂),可将第二微电子元件的第一端区域与间隔元件31键合。键合材料71可以设置在第一微电子元件的前表面16的大部分和衬底30的第一表面34的一部分之间。在特定的实施例中,键合材料60、61和/或71可以部分地或全部地由衬底焊接粘合剂制成,且在特定的示例中,可由低弹性模量材料(例如硅弹性体)制成。然而,在特定的实施例中,如果两个微电子元件12、14是由相同材料形成的常规半导体芯片,那么键合材料60、61和/或71可以全部地或部分地由高弹性模量粘合剂或焊料制成,这是因为,响应于温度变化,微电子元件将趋于一致地扩张或收缩。不论采用何种材料,间隔元件31可以包括单个层或多层。如下结合图4-8详细讨论的,间隔元件31可以替换为一个或多个微电子元件。
参考图1A和图2,微电子组件可以包括将第一微电子元件的触点20与至少一些端子36电连接的引线70。引线70具有与衬底30的孔39对齐的部分。在一个实施例中,引线可以包括键合元件70,如延伸穿过孔39并键合到微电子元件和衬底的触点20、40的线键合。迹线(未示出)可以沿触点40和端子36之间的衬底延伸。在一个变型中,键合线70可以包括延伸穿过孔39并电连接到衬底触点40的线键合72。线键合72的每个将触点20电联接到衬底30的相应衬底触点40。线键合70可以包括2010年10月19日申请的、发明名称为“EnhancedStacked Microelectronic Assemblies with Central Contacts and Improved ThermalCharacteristics”的美国专利申请No.12/907,522中描述的多线键合结构,其全部公开内容通过引用并入本文。如上所述以及如图2所示,迹线25将衬底触点40电连接到端子36。因此,引线50可以包括线键合52、至少一些衬底触点40,以及至少一些迹线25。所有这些元件均对第一微电子元件12的触点20和端子36之间的电连接的建立有贡献。
如图1B所示,可选地或额外地,引线(如引线键合76)可以沿如图所示的衬底30的第一表面34延伸或沿第二表面延伸进入孔39以连接到触点20。引线键合76可以电连接到通孔83,或电连接到从第一表面34延伸到衬底30的第二表面处的一个或多个端子36的任何其他类型的导电元件。因此,引线70可以包括引线键合76和通孔83。如图1B进一步所示,微电子组件10可以包括将第二微电子元件14的触点26与衬底的第二表面32的衬底触点40电互连的引线键合85。
微电子组件10进一步包括将第二微电子元件12的触点26电连接到衬底30的第二表面32处的至少一些端子36的引线50。引线50具有与孔39对齐的部分,并可以包括将第二微电子元件的触点26电连接到衬底30的第二表面32处的衬底触点40的多线键合52。线键合52可以延伸穿过孔39。每个线键合52将触点26电联接到衬底30的相应衬底触点40。引线50可以包括如2010年10月19日申请的、发明名称为“Enhanced Stacked MicroelectronicAssemblies with Central Contacts and Improved Thermal Characteristics”的美国专利申请No.12/907,522中描述的多线键合结构,其全部公开内容通过引用并入本文。如图2所示,迹线25将衬底触点40电连接到端子36。因此,引线50可以包括线键合52、至少一些衬底触点40以及至少一些迹线25。所有这些元件均对第二微电子元件14的触点26和端子36之间的电连接的建立有贡献。可选地或额外地,引线50可以包括将触点26与衬底30的第一表面34处或衬底的第二表面32处的一些衬底触点电联接的引线键合。引线键合不必延伸穿过衬底30的孔39,但是至少部分地与孔对齐。
微电子组件10还可以包括至少覆盖第一微电子元件12和第二微电子元件14的包胶模(overmold)或密封剂11。如图1A所示,包胶模11还可以覆盖延伸于第一微电子元件的第一边缘27和第二微电子元件14的第一边缘35之外的衬底30的部分。因此,包胶模11可以至少接触第一微电子元件12的第一边缘27、第二微电子元件14的第一边缘35以及衬底30的第一表面34。包胶模11可以由任何合适的材料制成,包括环氧树脂等。
如2010年10月19日申请的、发明名称为“Enhanced Stacked MicroelectronicAssemblies with Central Contacts and Improved Thermal Characteristics”的美国专利申请No.12/907,522所描述的,微电子组件10可额外地包括附接至一个或多个第一微电子元件12或第二微电子元件14的后表面的散热器或散热板,其全部公开内容通过引用并入本文。在一些实施例中,微电子组件10包括热耦合到第一微电子元件12和/或第二微电子元件14的一个或多个后面18、24(可能热耦合到边缘表面27、35、37)的散热器。散热器可以占据图1A所示的包胶模11所占据的区域的一些部分。
另外,微电子组件10还可以包括附接至介质元件30的第二表面32上的端子36的接合单元81。接合单元81可以是焊球或其他键合块和金属(例如锡、铟或其组合)块,并适用于将微电子组件10接合和电联接到电路板(例如印刷电路板)。
如图1C所示,微电子组件10的引线50可以额外地或可选地包括将第一微电子元件12的至少一些触点20与位于孔39的相对侧上的至少一些衬底触点40电连接的线键合53。因此,线键合53可以跨过衬底30的孔。此外,引线70可以可选地或额外地包括将第一微电子元件12的至少一些触点20与第二微电子元件14的至少一些触点26电连接的线键合73。
图3A描述了图1A所示的微电子组件10的变型10’。在这个变型中,替换表面16’处的触点20(或者除了表面16’处的触点20之外),第一微电子元件12’可以包括背向衬底30’的表面18’处的触点20’。这种表面18’可以是第一微电子元件12’的前表面。表面18’可以具有邻近第一微电子元件12’的第一边缘27’的第一端部分82、邻近第二边缘29’的第二端部分84,以及第一端部分82和第二端部分84之间的中心部分86。触点20’可以设置在邻近第一边缘27’的表面18’的第一端部分82中,在表面18’的中心部分86中,或在第一端部分和中心部分中。在一个实施例中,触点20’可以布置为表面18’的中心部分86处的一行或平行的两行。
微电子组件10’可以包括与表面18’处的触点20’以及端子36电连接的引线88。在一个示例中,引线88的部分(例如线键合)可以延伸超过第一微电子元件12’的第一边缘27’到达触点40’,触点40’可以再例如通过迹线(未示出)或其他导电元件连接到端子。引线88可以包括线键合90,线键合90从触点20’开始延伸,超过第一微电子元件的第一边缘27’,到达衬底30’的第一表面处的触点40’,并且引线88可以包括衬底的其他导电结构,例如触点和端子36之间的导电迹线。如图3B所示,引线部分52’,例如线键合,可以将微电子元件14’的触点26连接到孔39’的任一侧或两侧上的触点40’。
图4和图5描述了图1A所示的微电子组件10的变型。图1A中所示的微电子组件10类似于图3A中所示的微电子组件10’,二者都具有正面放置的第一微电子元件(12,12’)。在这个变型中,使用倒装芯片放置的第三微电子元件112替换间隔元件31。但是,在所示的特定视图中,第一微电子元件101出现在图的右侧,第三微电子元件112出现在图的左侧。第三微电子元件112包括在其前表面116处的多个触点120。第三微电子元件112的触点120与衬底130的第二表面132处的至少一些触点136连接。
倒装芯片互连143将第三微电子元件112的前表面116上的触点120通过金属凸点(例如,如焊料的键合金属)电连接到衬底30的第一表面134上的至少一些触点141。然后反转微电子元件,以便金属凸点提供微电子元件的触点(例如,键合焊盘)和衬底之间的电通路以及微电子元件至衬底的机械附接。倒装芯片工艺有很多变型,但是一种常用的配置是使用焊料作为金属凸点以及使用焊料的熔融作为将其固定至键合焊盘和衬底的方法。当焊料熔化时,它可流动以形成截球体。
倒装芯片互连为第三微电子元件112提供比通过线键合连接至介质元件的其他微电子元件多的I/O(输入/输出)。此外,倒装芯片互连将第二微电子元件114和介质元件30之间的线键合路径最小化,从而减小线键合的阻抗。
在图4和图5所示的实施例中,倒装芯片互连143可以包括设置在第三微电子元件112和衬底130之间的多个实心金属凸点145,例如焊球。金属凸点145可以是导电球或导电接线柱。每个实心金属凸点145可以设置在第三微电子元件112的触点120和衬底130的衬底触点141之间(并与它们接触),从而提供电触点120和导电元件141之间的电连接。金属凸点145可以基本由接合金属或任何其他合适的材料组成。
底充胶147可以围绕实心金属凸点145以将第三微电子元件112粘合到衬底130。底充胶147可以特别地设置在第三微电子元件112的前表面116和衬底130的第一表面134之间,以将第三微电子元件112联接到衬底130。例如,底充胶147可以全部地或部分地由聚合材料(例如环氧树脂)制成。但是,在一些实施例中,底充胶被完全省略。
图6示出了图4所示的微电子组件100的变型。微电子组件200类似于微电子组件100,但是不包括将第一微电子元件电连接到衬底触点的倒装芯片互连。相反,第一微电子元件212正面放置,且包括邻近其第一边缘227的一行或平行的多行的触点220。引线270将触点220电连接到衬底230的第二表面236上的端子236。
引线270可以包括线键合,线键合从触点220开始延伸,超过第一微电子元件212的第一边缘227,到达衬底230的第二表面234处的衬底触点240。此外,引线270可以包括通孔283或将衬底触点240和至少一些端子236电连接的任何其他合适的导电元件。通孔283可以从第一表面234延伸穿过衬底230到达衬底230的第二表面232。
微电子组件200还包括将第二微电子元件214的前表面222处的触点226电连接到至少一些端子236的引线250。引线250的部分与衬底230的孔239对齐。在这个变型中,引线270包括从触点226延伸穿过孔239的多线键合252。线键合252可以电连接到位于衬底230的第二表面处和孔239的相对侧上的衬底触点240。
图7描述了图6所示的微电子组件200的变型。图7所示的微电子组件300基本类似于图1A或1B所示的微电子组件200,但微电子组件300具有替换间隔元件31的第三微电子元件301,第三微电子元件具有类似于第一微电子元件12的电互连(如图1A)的与衬底的电互连。
图8描述了图7所示的微电子组件300的变型。在这个变型中,所示的微电子组件400安装在外部部件(例如电路板900,例如印刷电路板)上,并包括额外的电连接或引线。虽然只有图8示出了电安装在电路板(例如印刷电路板)上的微电子组件,但是本文上述的任何微电子组件可以安装至电路板或微电子组件外部的其他部件。
微电子组件400可以包括延伸跨过孔439并将第一微电子元件412的触点420与第三微电子元件401的触点490电连接的电连接或引线474。引线474可以包括线键合和/或引线键合。另一组电连接或引线476可以至少部分地与衬底430的孔439对齐,并将第一微电子元件412的至少一些触点420与第二微电子元件414的至少一些触点426电连接。引线476可以包括线键合和/或引线键合。又另一组电连接或引线478至少部分地与衬底430的孔430对齐,并将第二微电子元件414的至少一些触点426与第三微电子元件401的至少一些触点490电连接。引线478可以包括线键合和/或引线键合。
图9A示出了图1A所示的示意性侧剖视图的堆叠变型。微电子部件500可以具有堆叠的第一微电子组件510a和第二微电子组件510b(统称为微电子组件510)。每个微电子组件510可以是上面参考图1A至图8描述的任何微电子组件,且微电子组件可以彼此相同或不同。堆叠中可以有任意数量的微电子组件510,例如,如图9A所示,包括两个微电子组件510a和510b。
接合单元581例如焊球可以将第一微电子组件510a和第二微电子组件510b彼此接合和彼此电联接。这种接合单元581可以附接到暴露在第一微电子组件510a的衬底530的第二表面532处的端子536以及暴露在第二微电子组件510b的衬底530的第一表面534处的端子536’。包括堆叠微电子组件510的微电子部件500可以通过暴露在微电子部件500的顶表面501或底表面502处的接合单元581附接到电路板(例如印刷电路板)。
如图9B所示,微电子部件500可以包括邻近微电子部件的外围503布置的接合单元581。接合单元581可以位于微电子部件500的非密集(稀疏,depopulated)中心区域590的外侧。在这种实施例中,接合单元可以布置为不覆盖微电子组件510的第一微电子元件512和第二微电子元件514。这种实施例可以允许接合在一起的多个微电子组件510具有比在中心区域590中包括接合单元581的微电子部件500更低的堆叠高度。
如图9A所示,微电子部件500可以具有至少部分覆盖微电子组件510的第一微电子元件512和第二微电子元件514的单个密封剂511。在这种实施例中,微电子组件510可以不通过密封而彼此接合,然后,可以形成覆盖接合的微电子部件中的微电子元件的单个密封剂511。密封剂511可以覆盖微电子部件500的不用于与微电子部件外部的一个或多个部件电连接的部分。
在可选的实施例中,每个微电子组件510可以单独形成,每个具有各自的密封剂,类似于图10所示的实施例。在这种每个微电子组件510具有单独形成的密封剂的实施例中,这些密封的微电子组件可以彼此堆叠与接合,例如堆叠成如图10所示的结构,从而提供彼此的电连通。
在特定的示例中,微电子部件500可以用作非均匀存储器,例如,可用于智能手机应用。在这种示例中,微电子组件510中的一些微电子元件512、514可以包括如易失性RAM的存储器存储元件,一些微电子元件512、514可以包括如非易失性闪存的存储器存储元件。
图10示出了图9A所示的示意性侧剖视图的堆叠变型。微电子部件600可以具有堆叠的第一微电子组件610a和第二微电子组件610b(统称为微电子组件610)。每个微电子组件可以是上面参考图1A至图8描述的微电子组件的任一个,且微电子组件可以彼此相同或不同。堆叠中可以有任意数量的微电子组件610,例如,包括如图9A所示的两个微电子组件610a和610b。
除了至少一些接合单元681覆盖微电子组件612和614以及微电子组件610a和610b的每个可以单独形成且具有各自的密封剂611a和610b之外,微电子部件600与图9A和图9B中所示的微电子部件500相同。在可选的实施例中,微电子部件600可以具有至少部分地覆盖微电子组件610的第一微电子元件612和第二微电子元件614的单个密封剂,类似于图9A所示的单个密封剂511。
如图10所示,接合单元681可以将微电子组件610彼此接合并彼此电联接。这种接合单元681可以附接至暴露在第一微电子组件610a的衬底630的第二表面632处的端子636以及暴露在第二微电子组件610b的密封剂611b的顶表面603处的端子682。端子682可以通过线键合604与暴露在衬底630的第一表面634处的导电元件636’电连接。暴露在密封剂611a或611b的顶表面603处的端子682的一些可以覆盖微电子元件612和614的至少一个。在这种具有端子682覆盖微电子元件612和614中的至少一个的微电子组件610的微电子部件600中,每个微电子组件610的端子682和636可以布置成面阵,从而可以允许微电子组件610的面阵堆叠。
暴露在密封剂611a或611b的顶表面603处的端子682可以在顶表面上延伸,可以与顶面齐平,或可以凹入到顶表面下。这种端子682可以是任何形状,包括例如盘状(pad-like)或球状的形状。2011年5月3日申请的同时待审且共同所有的韩国专利申请No.10-2011-0041843中示出并描述了端子682和线键合604的其他形状与结构的示例,其公开内容通过引用并入本文。
线键合604在其基座607处接合到导电元件636’,并可延伸到远离各个基座607和衬底630的自由端608。线键合604的自由端608的特征为自由的,因为它们不与微电子组件610a中的微电子元件612、614或(再连接至微电子元件612、614的)任何其他导电特征电连接或以其他方式接合。换言之,自由端608可用于通过焊球或本文讨论的其他特征直接或间接地电连接到微电子组件610a外部的导电特征。通过例如密封剂611或与另一导电特征电连接或以其他方式接合而将自由端608保持在预定位置的事实不意味着它们不是如本文描述的“自由”的,只要任何这种特征不与微电子元件612、614电连接即可。相反地,基座607不是自由的,因为它如本文所描述地直接或间接地电连接到微电子元件612、614。
线键合604可以由导电材料(如铜、金、镍、焊料、铝等)制成。额外地,线键合604可以由组合材料制成,例如由具有导电材料(例如,铜或铝)的核芯(例如,具有涂覆到核芯上的涂层)制成。涂层可以是由第二导电材料(例如,铝、镍等)制成的。可选地,涂层可以是由绝缘材料制成的,例如绝缘夹套。在实施例中,用于形成线键合604的导线可以具有约15μm至150μm的厚度(即,垂直于导线的长度的尺寸)。
线键合604的自由端608具有端表面638。端表面638可以形成由多个线键合604的各个端表面形成的阵列中的触点的至少一部分。部分的线键合604可以保持不被密封剂611a覆盖(也可称为未密封),从而使线键合可用于与位于密封剂外侧的特征或元件电连接。在实施例中,线键合604的端表面638保持不被密封剂611a覆盖,且可以暴露在密封剂的顶表面603处。其他实施例是可行的,其中除了端表面638不被密封剂覆盖之外,或者替换不被密封剂覆盖的端表面638,线键合604的边缘表面605的一部分不被密封剂611a覆盖。换言之,密封剂611a可以覆盖从第一表面开始及其之上的所有微电子组件610a,除了线键合604的一部分,例如端表面638、边缘表面605或二者的结合。
在一个实施例中,端表面638和部分的边缘表面605可以不被密封剂611a覆盖。通过允许焊料沿边缘表面605镀锡(wick)以及与边缘表面605和端表面638接合,这种配置可以提供与另一导电元件的连接(例如通过焊球等)。在图示的实施例中,表面(如密封剂611a的顶表面603)可以与衬底630的第一表面634间隔开足够大的距离以覆盖微电子元件612、614。相应地,线键合604的端部638与顶表面630平齐的微电子组件610a的实施例可以包括在衬底630上延伸至比微电子元件612、614高的高度的线键合604。
包括堆叠微电子组件610的微电子部件600可以使用暴露在微电子部件600的顶表面601或底表面602处的接合单元681附接到电路板(如印刷电路板)。
在特定示例中,微电子部件600可以用作非均匀存储器,如用于智能手机应用。在这样的实例中,微电子组件610中的一些微电子元件612、614可以包括如易失性RAM的存储器存储元件,一些微电子元件612、614可以包括如非易失性闪存的存储器存储元件。
虽然图9A、图9B和图10所示的实施例示出了通过线键合电连接到衬底的触点的微电子元件,但在其他实施例中,这种微电子元件可以通过其他连接配置(包括,例如引线键合以及倒装芯片安装至衬底的触点的一个或多个微电子元件)电连接到衬底的触点。
如图11所示,上述微电子组件可以用于构建各种电子系统。例如,根据本发明进一步实施例的系统1100包括与其他电子部件1108和1110相结合的上述微电子组件1106。在示出的示例中,部件1108是半导体芯片,而部件1110是显示屏,但是可以使用任何其他部件。当然,尽管为了说明的清楚性,图11中只示出了两个额外的部件,但系统可以包括任意数量的这种部件。微电子组件1106可以是上述组件的任一个。在进一步的变型中,可以使用任何数量的这种微电子组件。
微电子组件1106和部件1108、1110安装在共用壳体1101(以虚线示意性地示出)中且在必要时彼此电互连以形成期望的电路。在示出的示例性系统中,系统包括电路板1102(例如柔性印刷电路板),电路板包括将部件彼此互连的许多个导体1104,图11仅示出一个导体。然而,这仅是示例性的,可以使用用于制作电连接的任何适当的结构。壳体1101被示为在例如移动电话或个人数字助理中可用的类型的便携式壳体,屏幕1110暴露在壳体的表面处。在结构1106包括感光元件(例如,成像芯片)的情况下,还可以设置用于将光导向到该结构的透镜1111或其他光学装置。此外,图11所示的简化的系统仅仅是示例性的;可以使用上述的结构形成其他系统,包括通常被认为是固定结构的系统,例如台式电脑,路由器等。
尽管此处已经参考特定具体实施例描述了本发明,应该理解的是这些实施例仅仅是对本发明的原理和应用的说明。因此,应理解的是,在不脱离通过所附权利要求限定的本发明的精神和范围的情况下,可以对上述说明性实施例进行各种修改以及可以设计其他布置。
应理解的是,此处阐述的各个从属权利要求与特征可以以与原始权利要求呈现的方式不同的方式组合。还应理解的是,结合各个实施例描述的特征可与所述实施例的其他特征共享。

Claims (42)

1.一种微电子组件,包括:
衬底,所述衬底具有相对地面对的第一表面、第二表面以及在所述第一表面和第二表面之间延伸的孔,所述衬底具有暴露在其第二表面处的第一端子;
第一微电子元件,所述第一微电子元件具有面对所述衬底的第一表面的前表面、远离所述前表面的后表面,以及在所述前表面和后表面之间延伸的边缘,所述第一微电子元件具有暴露在其所述前表面处且邻近所述第一微电子元件的所述边缘的多个触点;
第二微电子元件,所述第二微电子元件具有相对的第一边缘和第二边缘、在所述第一边缘和第二边缘之间延伸的前表面,以及设置在其前表面的中心区域且远离所述第一边缘和第二边缘的多个触点,所述第二微电子元件的前表面面对所述第一微电子元件并突出于所述第一微电子元件的边缘之外;
第一引线,所述第一引线将所述第一微电子元件的所述触点电连接到所述第一端子;
第二引线,所述第二引线将所述第二微电子元件的所述触点连接到所述第一端子,所述第一引线和第二引线具有与所述孔对齐的部分;
第二端子,所述第二端子暴露在与所述衬底的所述第二表面相对的所述微电子组件的表面处,其中至少一些所述第二端子覆盖所述第一微电子元件和所述第二微电子元件的至少一个并且通过线键合与暴露在所述衬底的所述第一表面处的导电元件电连接;以及
密封剂,所述密封剂至少部分地覆盖所述第一微电子元件和第二微电子元件以及至少部分的所述线键合,其中所述第二端子暴露在其处的所述微电子组件的所述表面为所述密封剂的表面,
其中所述线键合具有未密封边缘表面,所述未密封边缘表面位于附接至所述导电元件的所述线键合的基座与远离所述导电元件的所述线键合的端部之间,其中所述第二端子与所述未密封边缘表面电连接。
2.根据权利要求1所述的微电子组件,其中所述线键合具有远离所述导电元件的未密封端表面,所述边缘表面在所述基座和所述未密封端表面之间延伸,所述密封剂未覆盖所述未密封端表面,其中所述第二端子与所述未密封端表面和所述未密封边缘表面电连接。
3.根据权利要求1所述微电子组件,其中所述第一微电子元件和所述第二微电子元件的至少一个包括易失性随机存取存储器,且所述第一微电子元件和所述第二微电子元件的至少一个包括非易失性闪存。
4.根据权利要求1所述的微电子组件,进一步包括将所述第一微电子元件的所述触点与所述第二微电子元件的所述触点电互连的第三引线,所述第一引线、第二引线和第三引线具有与所述孔对齐的部分。
5.根据权利要求1所述的微电子组件,其中所述第一引线或第二引线中的至少一个包括从所述第一微电子元件或第二微电子元件中的至少一个的所述触点延伸的线键合。
6.根据权利要求1所述的微电子组件,其中所述第一引线和第二引线中的至少一个的与所述孔对齐的所述部分是单片导电元件的部分,所述单片导电元件具有沿所述衬底延伸到所述第一端子的第二部分。
7.根据权利要求1所述的微电子组件,进一步包括在所述第二微电子元件的所述前表面和所述衬底的所述第一表面之间的间隔元件。
8.根据权利要求1所述的微电子组件,其中所述第一微电子元件包括用于主要执行逻辑功能的芯片。
9.根据权利要求1所述的微电子组件,其中所述第二微电子元件具有比提供任何其它功能的有源装置更多的有源装置以提供存储器存储阵列功能。
10.根据权利要求1所述的微电子组件,其中所述第一微电子元件具有比提供任何其它功能的有源装置更多的有源装置以提供存储器存储阵列功能。
11.根据权利要求1所述的微电子组件,进一步包括将所述第一微电子元件的所述触点电连接到所述第一端子的第三引线,所述第一引线和第三引线连接到所述孔的相对侧上的第一端子,所述第一引线、第二引线和第三引线具有与所述孔对齐的部分。
12.根据权利要求1所述的微电子组件,进一步包括:
第三微电子元件,所述第三微电子元件设置在所述衬底的第一表面与所述第二微电子元件的所述前表面之间,所述第三微电子元件具有相对的第一边缘和第二边缘、在所述第一边缘和第二边缘之间延伸的前表面,以及设置在其所述前表面上且邻近所述第一边缘的多个触点,所述第三微电子元件的前表面面对所述衬底的所述第一表面;
第三引线,所述第三引线将所述第三微电子元件的所述触点电连接到所述第一端子;以及
第四引线,所述第四引线将所述第一微电子元件和第三微电子元件的所述触点电互连,所述第一微电子元件和第三微电子元件的所述触点位于所述孔的相对侧上,所述第一引线、第二引线、第三引线和第四引线具有与所述孔对齐的部分。
13.根据权利要求12所述的微电子组件,进一步包括第五引线,所述第五引线将所述第一微电子元件和第二微电子元件的所述触点电互连。
14.根据权利要求13所述的微电子组件,还包括第六引线,所述第六引线将所述第二微电子元件和第三微电子元件的所述触点电互连。
15.根据权利要求4所述的微电子组件,其中所述第一引线或第二引线中的至少一个包括从所述第一微电子元件或第二微电子元件中的至少一个的所述触点延伸的第二线键合。
16.根据权利要求4所述的微电子组件,其中所述第一引线或所述第二引线中的至少一个的与所述孔对齐的所述部分是单片导电元件的部分,所述单片导电元件具有沿所述衬底延伸到所述端子的第二部分。
17.根据权利要求4所述的微电子组件,进一步包括在所述第二微电子元件的所述前表面和所述衬底的所述第一表面之间的间隔元件。
18.根据权利要求4所述的微电子组件,其中所述第一微电子元件包括用于主要执行逻辑功能的芯片。
19.根据权利要求4所述的微电子组件,其中所述第二微电子元件具有比提供任何其它功能的有源装置更多的有源装置以提供存储器存储阵列功能。
20.根据权利要求4所述的微电子组件,其中所述第一微电子元件具有比提供任何其它功能的有源装置更多的有源装置以提供存储器存储阵列功能。
21.根据权利要求11所述的微电子组件,其中所述第一微电子元件包括用于主要执行逻辑功能的芯片。
22.根据权利要求11所述的微电子组件,其中所述第二微电子元件具有比提供任何其它功能的有源装置更多的有源装置以提供存储器存储阵列功能。
23.根据权利要求11所述的微电子组件,其中所述第一微电子元件具有比提供任何其它功能的有源装置更多的有源装置以提供存储器存储阵列功能。
24.根据权利要求12所述的微电子组件,其中所述第一微电子元件包括用于主要执行逻辑功能的芯片。
25.根据权利要求12所述的微电子组件,其中所述第二微电子元件具有比提供任何其它功能的有源装置更多的有源装置以提供存储器存储阵列功能。
26.根据权利要求12所述的微电子组件,其中所述第一微电子元件具有比提供任何其它功能的有源装置更多的有源装置以提供存储器存储阵列功能。
27.一种微电子部件,包括第一微电子组件和第二微电子组件,所述第一微电子组件和所述第二微电子组件均为根据权利要求1所述的微电子组件,所述第一微电子组件至少部分地覆盖所述第二微电子组件,且所述第一微电子组件的所述第一端子与所述第二微电子组件的所述第二端子接合。
28.根据权利要求27所述的微电子部件,其中至少一个所述第一微电子元件主要用于执行逻辑功能,至少一个所述第二微电子元件具有比提供任何其它功能的有源装置更多的有源装置以提供存储器存储阵列功能。
29.根据权利要求27所述的微电子部件,其中所述第一微电子组件的至少一些所述第一端子和所述第二微电子组件的至少一些所述第二端子布置成面阵,且其中所述第一微电子组件和第二微电子组件通过接合单元相接合,所述接合单元是烧结金属的导电块。
30.根据权利要求27所述的微电子部件,其中所述微电子组件通过邻近所述微电子部件的外围布置的接合单元彼此电连接。
31.根据权利要求30所述的微电子部件,其中所述接合单元位于所述微电子部件的非密集中心区域的外侧。
32.一种系统,包括根据权利要求1所述的微电子组件和电连接到所述微电子组件的一个或多个其他电子部件。
33.根据权利要求32所述的系统,其中至少一些所述第一端子电连接到电路板。
34.根据权利要求33所述的系统,进一步包括壳体,所述微电子组件和所述其他电子部件安装到所述壳体。
35.一种系统,包括根据权利要求4所述的微电子组件和电连接到所述微电子组件的一个或多个其他电子部件。
36.根据权利要求35所述的系统,其中所述第一端子电连接到电路板。
37.根据权利要求36所述的系统,进一步包括壳体,所述微电子组件和所述其他电子部件安装到所述壳体。
38.一种微电子部件,包括第一微电子组件和第二微电子组件,所述第一微电子组件和所述第二微电子组件均为根据权利要求4所述的微电子组件,所述第一微电子组件与所述第二微电子组件电连接,并且所述第一微电子组件至少部分地覆盖所述第二微电子组件。
39.根据权利要求38所述的微电子部件,其中所述微电子组件通过邻近所述微电子部件的外围布置的接合单元彼此电连接。
40.根据权利要求39所述的微电子部件,其中所述接合单元位于所述微电子部件的非密集中心区域的外侧。
41.根据权利要求38所述的微电子部件,其中所述第一微电子组件和所述第二微电子组件中的微电子元件的一些包括易失性随机存取存储器,所述第一微电子组件和所述第二微电子组件中的微电子元件的一些包括非易失性闪存。
42.根据权利要求38所述的微电子部件,其中至少一个所述第一微电子元件主要用于执行逻辑功能,至少一个所述第二微电子元件具有比提供任何其它功能的有源装置更多的有源装置以提供存储器存储阵列功能。
CN201280030801.1A 2011-04-21 2012-04-11 倒装芯片、正面和背面中心键合存储线键合组件 Expired - Fee Related CN103620778B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201161477967P 2011-04-21 2011-04-21
US61/477,967 2011-04-21
US13/306,099 2011-11-29
US13/306,099 US8928153B2 (en) 2011-04-21 2011-11-29 Flip-chip, face-up and face-down centerbond memory wirebond assemblies
PCT/US2012/032997 WO2012145201A1 (en) 2011-04-21 2012-04-11 Flip-chip, face-up and face-down centerbond memory wirebond assemblies

Publications (2)

Publication Number Publication Date
CN103620778A CN103620778A (zh) 2014-03-05
CN103620778B true CN103620778B (zh) 2017-05-17

Family

ID=47020672

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201280030801.1A Expired - Fee Related CN103620778B (zh) 2011-04-21 2012-04-11 倒装芯片、正面和背面中心键合存储线键合组件

Country Status (8)

Country Link
US (3) US8928153B2 (zh)
EP (1) EP2700100A1 (zh)
JP (1) JP2014512688A (zh)
KR (1) KR102005830B1 (zh)
CN (1) CN103620778B (zh)
BR (1) BR112013027142A2 (zh)
TW (2) TW201546986A (zh)
WO (1) WO2012145201A1 (zh)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7999383B2 (en) * 2006-07-21 2011-08-16 Bae Systems Information And Electronic Systems Integration Inc. High speed, high density, low power die interconnect system
US8553420B2 (en) 2010-10-19 2013-10-08 Tessera, Inc. Enhanced stacked microelectronic assemblies with central contacts and improved thermal characteristics
US9013033B2 (en) 2011-04-21 2015-04-21 Tessera, Inc. Multiple die face-down stacking for two or more die
US8633576B2 (en) * 2011-04-21 2014-01-21 Tessera, Inc. Stacked chip-on-board module with edge connector
US8304881B1 (en) 2011-04-21 2012-11-06 Tessera, Inc. Flip-chip, face-up and face-down wirebond combination package
US8952516B2 (en) 2011-04-21 2015-02-10 Tessera, Inc. Multiple die stacking for two or more die
US8928153B2 (en) 2011-04-21 2015-01-06 Tessera, Inc. Flip-chip, face-up and face-down centerbond memory wirebond assemblies
US8970028B2 (en) * 2011-12-29 2015-03-03 Invensas Corporation Embedded heat spreader for package with multiple microelectronic elements and face-down connection
US8569884B2 (en) * 2011-08-15 2013-10-29 Tessera, Inc. Multiple die in a face down package
US10163877B2 (en) * 2011-11-07 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. System in package process flow
US9165906B2 (en) * 2012-12-10 2015-10-20 Invensas Corporation High performance package on package
USD758372S1 (en) * 2013-03-13 2016-06-07 Nagrastar Llc Smart card interface
US9888283B2 (en) 2013-03-13 2018-02-06 Nagrastar Llc Systems and methods for performing transport I/O
US9299736B2 (en) * 2014-03-28 2016-03-29 Taiwan Semiconductor Manufacturing Company, Ltd. Hybrid bonding with uniform pattern density
JP2015216263A (ja) * 2014-05-12 2015-12-03 マイクロン テクノロジー, インク. 半導体装置
KR102216195B1 (ko) * 2014-12-15 2021-02-16 에스케이하이닉스 주식회사 복수 개의 칩을 적층한 반도체 패키지
TWI589016B (zh) 2015-01-28 2017-06-21 精材科技股份有限公司 感光模組及其製造方法
USD864968S1 (en) 2015-04-30 2019-10-29 Echostar Technologies L.L.C. Smart card interface
US20190043776A1 (en) * 2016-04-02 2019-02-07 Intel Corporation Dual-sided package assembly processing
US20180166417A1 (en) * 2016-12-13 2018-06-14 Nanya Technology Corporation Wafer level chip-on-chip semiconductor structure
US10475766B2 (en) * 2017-03-29 2019-11-12 Intel Corporation Microelectronics package providing increased memory component density
US11388819B2 (en) * 2018-01-24 2022-07-12 Kyocera Corporation Wiring board, electronic device, and electronic module
KR102542617B1 (ko) * 2018-06-08 2023-06-14 삼성전자주식회사 반도체 패키지, 패키지 온 패키지 장치 및 이의 제조 방법
KR102078936B1 (ko) * 2018-11-07 2020-02-19 주식회사 프로텍 도전성 볼 탑재 방법
US10886149B2 (en) * 2019-01-31 2021-01-05 Advanced Semiconductor Engineering, Inc. Semiconductor device package and method of manufacturing the same
US11209598B2 (en) 2019-02-28 2021-12-28 International Business Machines Corporation Photonics package with face-to-face bonding
JP2022135003A (ja) * 2021-03-04 2022-09-15 住友電気工業株式会社 光コネクタケーブル
TWI839059B (zh) * 2023-01-03 2024-04-11 力晶積成電子製造股份有限公司 半導體封裝

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6703713B1 (en) * 2002-09-10 2004-03-09 Siliconware Precision Industries Co., Ltd. Window-type multi-chip semiconductor package

Family Cites Families (221)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62107391A (ja) 1985-11-06 1987-05-18 Nippon Texas Instr Kk 情報記憶媒体
US5138438A (en) 1987-06-24 1992-08-11 Akita Electronics Co. Ltd. Lead connections means for stacked tab packaged IC chips
JPH02174255A (ja) 1988-12-27 1990-07-05 Mitsubishi Electric Corp 半導体集積回路装置
US5148266A (en) 1990-09-24 1992-09-15 Ist Associates, Inc. Semiconductor chip assemblies having interposer and flexible lead
US5679977A (en) 1990-09-24 1997-10-21 Tessera, Inc. Semiconductor chip assemblies, methods of making same and components for same
US5148265A (en) 1990-09-24 1992-09-15 Ist Associates, Inc. Semiconductor chip assemblies with fan-in leads
US5222014A (en) 1992-03-02 1993-06-22 Motorola, Inc. Three-dimensional multi-chip pad array carrier
US5369552A (en) 1992-07-14 1994-11-29 Ncr Corporation Multi-chip module with multiple compartments
JP3487524B2 (ja) 1994-12-20 2004-01-19 株式会社ルネサステクノロジ 半導体装置及びその製造方法
US5998864A (en) 1995-05-26 1999-12-07 Formfactor, Inc. Stacking semiconductor devices, particularly memory chips
US5861666A (en) 1995-08-30 1999-01-19 Tessera, Inc. Stacked chip assembly
KR100204753B1 (ko) 1996-03-08 1999-06-15 윤종용 엘오씨 유형의 적층 칩 패키지
JP2806357B2 (ja) 1996-04-18 1998-09-30 日本電気株式会社 スタックモジュール
US5892660A (en) 1996-08-29 1999-04-06 Micron Technology, Inc. Single in line memory module adapter
WO1998012568A1 (en) 1996-09-18 1998-03-26 Hitachi, Ltd. Process for producing semiconductor device and semiconductor device
JP3619523B2 (ja) 1996-12-04 2005-02-09 株式会社ルネサステクノロジ 半導体装置
JP2978861B2 (ja) 1997-10-28 1999-11-15 九州日本電気株式会社 モールドbga型半導体装置及びその製造方法
JP3393800B2 (ja) * 1997-11-05 2003-04-07 新光電気工業株式会社 半導体装置の製造方法
JP3718039B2 (ja) 1997-12-17 2005-11-16 株式会社日立製作所 半導体装置およびそれを用いた電子装置
US6343019B1 (en) 1997-12-22 2002-01-29 Micron Technology, Inc. Apparatus and method of stacking die on a substrate
US6742098B1 (en) 2000-10-03 2004-05-25 Intel Corporation Dual-port buffer-to-memory interface
US6021048A (en) 1998-02-17 2000-02-01 Smith; Gary W. High speed memory module
US6150724A (en) 1998-03-02 2000-11-21 Motorola, Inc. Multi-chip semiconductor device and method for making the device by using multiple flip chip interfaces
US6072233A (en) 1998-05-04 2000-06-06 Micron Technology, Inc. Stackable ball grid array package
US6180881B1 (en) 1998-05-05 2001-01-30 Harlan Ruben Isaak Chip stack and method of making same
US6369444B1 (en) 1998-05-19 2002-04-09 Agere Systems Guardian Corp. Packaging silicon on silicon multichip modules
US5977640A (en) 1998-06-26 1999-11-02 International Business Machines Corporation Highly integrated chip-on-chip packaging
US7525813B2 (en) 1998-07-06 2009-04-28 Renesas Technology Corp. Semiconductor device
US6353539B1 (en) 1998-07-21 2002-03-05 Intel Corporation Method and apparatus for matched length routing of back-to-back package placement
US6121576A (en) 1998-09-02 2000-09-19 Micron Technology, Inc. Method and process of contact to a heat softened solder ball array
US6093029A (en) 1998-09-08 2000-07-25 S3 Incorporated Vertically stackable integrated circuit
US6201695B1 (en) 1998-10-26 2001-03-13 Micron Technology, Inc. Heat sink for chip stacking applications
US6815251B1 (en) 1999-02-01 2004-11-09 Micron Technology, Inc. High density modularity for IC's
JP2000243875A (ja) 1999-02-23 2000-09-08 Shinko Electric Ind Co Ltd 半導体装置
SE519108C2 (sv) 1999-05-06 2003-01-14 Sandvik Ab Belagt skärverktyg för bearbetning av grått gjutjärn
TW409377B (en) 1999-05-21 2000-10-21 Siliconware Precision Industries Co Ltd Small scale ball grid array package
KR100393095B1 (ko) 1999-06-12 2003-07-31 앰코 테크놀로지 코리아 주식회사 반도체패키지와 그 제조방법
JP3360655B2 (ja) 1999-07-08 2002-12-24 日本電気株式会社 半導体装置
JP2001053243A (ja) 1999-08-06 2001-02-23 Hitachi Ltd 半導体記憶装置とメモリモジュール
JP4526651B2 (ja) * 1999-08-12 2010-08-18 富士通セミコンダクター株式会社 半導体装置
US6199743B1 (en) 1999-08-19 2001-03-13 Micron Technology, Inc. Apparatuses for forming wire bonds from circuitry on a substrate to a semiconductor chip, and methods of forming semiconductor chip assemblies
JP2001085609A (ja) 1999-09-17 2001-03-30 Hitachi Ltd 半導体装置およびその製造方法
JP2001196407A (ja) 2000-01-14 2001-07-19 Seiko Instruments Inc 半導体装置および半導体装置の形成方法
US6369448B1 (en) 2000-01-21 2002-04-09 Lsi Logic Corporation Vertically integrated flip chip semiconductor package
US6414396B1 (en) 2000-01-24 2002-07-02 Amkor Technology, Inc. Package for stacked integrated circuits
JP3768761B2 (ja) 2000-01-31 2006-04-19 株式会社日立製作所 半導体装置およびその製造方法
JP2001223324A (ja) 2000-02-10 2001-08-17 Mitsubishi Electric Corp 半導体装置
US6731009B1 (en) 2000-03-20 2004-05-04 Cypress Semiconductor Corporation Multi-die assembly
KR100583491B1 (ko) 2000-04-07 2006-05-24 앰코 테크놀로지 코리아 주식회사 반도체패키지 및 그 제조방법
JP2002076252A (ja) 2000-08-31 2002-03-15 Nec Kyushu Ltd 半導体装置
JP3874062B2 (ja) 2000-09-05 2007-01-31 セイコーエプソン株式会社 半導体装置
JP3462166B2 (ja) 2000-09-08 2003-11-05 富士通カンタムデバイス株式会社 化合物半導体装置
US6492726B1 (en) 2000-09-22 2002-12-10 Chartered Semiconductor Manufacturing Ltd. Chip scale packaging with multi-layer flip chip arrangement and ball grid array interconnection
TW511405B (en) 2000-12-27 2002-11-21 Matsushita Electric Ind Co Ltd Device built-in module and manufacturing method thereof
SG95637A1 (en) 2001-03-15 2003-04-23 Micron Technology Inc Semiconductor/printed circuit board assembly, and computer system
SG106054A1 (en) 2001-04-17 2004-09-30 Micron Technology Inc Method and apparatus for package reduction in stacked chip and board assemblies
JP2002353398A (ja) 2001-05-25 2002-12-06 Nec Kyushu Ltd 半導体装置
US6472741B1 (en) 2001-07-14 2002-10-29 Siliconware Precision Industries Co., Ltd. Thermally-enhanced stacked-die ball grid array semiconductor package and method of fabricating the same
US6385049B1 (en) 2001-07-05 2002-05-07 Walsin Advanced Electronics Ltd Multi-board BGA package
JP2003101207A (ja) 2001-09-27 2003-04-04 Nec Kyushu Ltd 半田ボールおよびそれを用いた部品接続構造
US6977440B2 (en) 2001-10-09 2005-12-20 Tessera, Inc. Stacked packages
SG118103A1 (en) 2001-12-12 2006-01-27 Micron Technology Inc BOC BGA package for die with I-shaped bond pad layout
KR100480909B1 (ko) 2001-12-29 2005-04-07 주식회사 하이닉스반도체 적층 칩 패키지의 제조 방법
TW523890B (en) 2002-02-07 2003-03-11 Macronix Int Co Ltd Stacked semiconductor packaging device
SG121705A1 (en) 2002-02-21 2006-05-26 United Test & Assembly Ct Ltd Semiconductor package
US7196415B2 (en) 2002-03-22 2007-03-27 Broadcom Corporation Low voltage drop and high thermal performance ball grid array package
DE10215654A1 (de) 2002-04-09 2003-11-06 Infineon Technologies Ag Elektronisches Bauteil mit mindestens einem Halbleiterchip und Flip-Chip-Kontakten sowie Verfahren zu seiner Herstellung
US6924496B2 (en) 2002-05-31 2005-08-02 Fujitsu Limited Fingerprint sensor and interconnect
KR100958400B1 (ko) 2002-06-05 2010-05-18 가부시끼가이샤 르네사스 테크놀로지 반도체장치
US7132311B2 (en) 2002-07-26 2006-11-07 Intel Corporation Encapsulation of a stack of semiconductor dice
JP2004063767A (ja) 2002-07-29 2004-02-26 Renesas Technology Corp 半導体装置
US6762942B1 (en) 2002-09-05 2004-07-13 Gary W. Smith Break away, high speed, folded, jumperless electronic assembly
JP3866178B2 (ja) 2002-10-08 2007-01-10 株式会社ルネサステクノロジ Icカード
AU2003301632A1 (en) 2002-10-22 2004-05-13 Unitive International Limited Stacked electronic structures including offset substrates
JP4110992B2 (ja) 2003-02-07 2008-07-02 セイコーエプソン株式会社 半導体装置、電子デバイス、電子機器、半導体装置の製造方法および電子デバイスの製造方法
AU2003299866A1 (en) * 2003-02-25 2004-09-28 Tessera, Inc. High frequency chip packages with connecting elements
US7268425B2 (en) 2003-03-05 2007-09-11 Intel Corporation Thermally enhanced electronic flip-chip packaging with external-connector-side die and method
TW200419752A (en) 2003-03-18 2004-10-01 United Test Ct Inc Semiconductor package with heat sink
TWI313049B (en) 2003-04-23 2009-08-01 Advanced Semiconductor Eng Multi-chips stacked package
US7528421B2 (en) 2003-05-05 2009-05-05 Lamina Lighting, Inc. Surface mountable light emitting diode assemblies packaged for high temperature operation
KR20050001159A (ko) 2003-06-27 2005-01-06 삼성전자주식회사 복수개의 플립 칩들을 갖는 멀티칩 패키지 및 그 제조방법
KR100493063B1 (ko) * 2003-07-18 2005-06-02 삼성전자주식회사 스택 반도체 칩 비지에이 패키지 및 그 제조방법
SG148877A1 (en) 2003-07-22 2009-01-29 Micron Technology Inc Semiconductor substrates including input/output redistribution using wire bonds and anisotropically conductive film, methods of fabrication and assemblies including same
US7462936B2 (en) 2003-10-06 2008-12-09 Tessera, Inc. Formation of circuitry with modification of feature height
US7061121B2 (en) 2003-11-12 2006-06-13 Tessera, Inc. Stacked microelectronic assemblies with central contacts
US7095104B2 (en) 2003-11-21 2006-08-22 International Business Machines Corporation Overlap stacking of center bus bonded memory chips for double density and method of manufacturing the same
US7440286B2 (en) 2005-04-21 2008-10-21 Super Talent Electronics, Inc. Extended USB dual-personality card reader
US8998620B2 (en) 2003-12-02 2015-04-07 Super Talent Technology, Corp. Molding method for COB-EUSB devices and metal housing package
JP2005166892A (ja) 2003-12-02 2005-06-23 Kingpak Technology Inc スタック型小型メモリカード
DE10360708B4 (de) * 2003-12-19 2008-04-10 Infineon Technologies Ag Halbleitermodul mit einem Halbleiterstapel, Umverdrahtungsplatte, und Verfahren zur Herstellung derselben
US7176043B2 (en) 2003-12-30 2007-02-13 Tessera, Inc. Microelectronic packages and methods therefor
US20050173807A1 (en) 2004-02-05 2005-08-11 Jianbai Zhu High density vertically stacked semiconductor device
JP4370513B2 (ja) 2004-02-27 2009-11-25 エルピーダメモリ株式会社 半導体装置
JP2005251957A (ja) 2004-03-04 2005-09-15 Renesas Technology Corp 半導体装置
US7489517B2 (en) 2004-04-05 2009-02-10 Thomas Joel Massingill Die down semiconductor package
US7078808B2 (en) 2004-05-20 2006-07-18 Texas Instruments Incorporated Double density method for wirebond interconnect
US7525189B2 (en) 2004-05-21 2009-04-28 Nec Corporation Semiconductor device, wiring board, and manufacturing method thereof
KR20050119414A (ko) 2004-06-16 2005-12-21 삼성전자주식회사 에지 패드형 반도체 칩의 스택 패키지 및 그 제조방법
KR100599687B1 (ko) * 2004-06-29 2006-07-13 삼성에스디아이 주식회사 연료 전지 시스템 및 이에 사용되는 개질기
KR20060004298A (ko) * 2004-07-09 2006-01-12 삼성테크윈 주식회사 무선 전자 라벨
US7381593B2 (en) 2004-08-05 2008-06-03 St Assembly Test Services Ltd. Method and apparatus for stacked die packaging
JP4445351B2 (ja) 2004-08-31 2010-04-07 株式会社東芝 半導体モジュール
US20060049513A1 (en) 2004-09-03 2006-03-09 Staktek Group L.P. Thin module system and method with thermal management
JP4601365B2 (ja) * 2004-09-21 2010-12-22 ルネサスエレクトロニクス株式会社 半導体装置
US20060097400A1 (en) 2004-11-03 2006-05-11 Texas Instruments Incorporated Substrate via pad structure providing reliable connectivity in array package devices
US7786567B2 (en) 2004-11-10 2010-08-31 Chung-Cheng Wang Substrate for electrical device and methods for making the same
US7217994B2 (en) 2004-12-01 2007-05-15 Kyocera Wireless Corp. Stack package for high density integrated circuits
TWI256092B (en) 2004-12-02 2006-06-01 Siliconware Precision Industries Co Ltd Semiconductor package and fabrication method thereof
JP2006172122A (ja) 2004-12-15 2006-06-29 Toshiba Corp カード状記憶装置
US7755179B2 (en) 2004-12-20 2010-07-13 Semiconductor Components Industries, Llc Semiconductor package structure having enhanced thermal dissipation characteristics
JP4086068B2 (ja) 2004-12-27 2008-05-14 日本電気株式会社 半導体装置
KR20060080424A (ko) 2005-01-05 2006-07-10 삼성전자주식회사 멀티 칩 패키지를 장착하는 메모리 카드
US7112875B1 (en) 2005-02-17 2006-09-26 Amkor Technology, Inc. Secure digital memory card using land grid array structure
US7205656B2 (en) 2005-02-22 2007-04-17 Micron Technology, Inc. Stacked device package for peripheral and center device pad layout device
KR100630741B1 (ko) 2005-03-04 2006-10-02 삼성전자주식회사 다중 몰딩에 의한 적층형 반도체 패키지 및 그 제조방법
US7196427B2 (en) 2005-04-18 2007-03-27 Freescale Semiconductor, Inc. Structure having an integrated circuit on another integrated circuit with an intervening bent adhesive element
JP4704800B2 (ja) * 2005-04-19 2011-06-22 エルピーダメモリ株式会社 積層型半導体装置及びその製造方法
US7250675B2 (en) 2005-05-05 2007-07-31 International Business Machines Corporation Method and apparatus for forming stacked die and substrate structures for increased packing density
KR101070913B1 (ko) 2005-05-19 2011-10-06 삼성테크윈 주식회사 반도체 칩 적층 패키지
US7402911B2 (en) 2005-06-28 2008-07-22 Infineon Technologies Ag Multi-chip device and method for producing a multi-chip device
SG130066A1 (en) 2005-08-26 2007-03-20 Micron Technology Inc Microelectronic device packages, stacked microelectronic device packages, and methods for manufacturing microelectronic devices
DE102005041451A1 (de) 2005-08-31 2007-03-01 Infineon Technologies Ag Elektronische Steckeinheit
JP4108701B2 (ja) 2005-09-12 2008-06-25 株式会社ルネサステクノロジ Icカードの製造方法
US7602054B2 (en) 2005-10-05 2009-10-13 Semiconductor Components Industries, L.L.C. Method of forming a molded array package device having an exposed tab and structure
JP2007123595A (ja) * 2005-10-28 2007-05-17 Nec Corp 半導体装置及びその実装構造
JP2007134426A (ja) 2005-11-09 2007-05-31 Renesas Technology Corp マルチチップモジュール
US20070152310A1 (en) * 2005-12-29 2007-07-05 Tessera, Inc. Electrical ground method for ball stack package
JP2007188916A (ja) 2006-01-11 2007-07-26 Renesas Technology Corp 半導体装置
KR100673965B1 (ko) 2006-01-11 2007-01-24 삼성테크윈 주식회사 인쇄회로기판 및 반도체 패키지 제조방법
KR100690247B1 (ko) 2006-01-16 2007-03-12 삼성전자주식회사 이중 봉합된 반도체 패키지 및 그의 제조 방법
US20070176297A1 (en) 2006-01-31 2007-08-02 Tessera, Inc. Reworkable stacked chip assembly
WO2007088757A1 (ja) 2006-02-02 2007-08-09 Matsushita Electric Industrial Co., Ltd. メモリカードおよびメモリカードの製造方法
SG135074A1 (en) 2006-02-28 2007-09-28 Micron Technology Inc Microelectronic devices, stacked microelectronic devices, and methods for manufacturing such devices
KR20070088177A (ko) 2006-02-24 2007-08-29 삼성테크윈 주식회사 반도체 패키지 및 그 제조 방법
US20080002460A1 (en) 2006-03-01 2008-01-03 Tessera, Inc. Structure and method of making lidded chips
US7514780B2 (en) 2006-03-15 2009-04-07 Hitachi, Ltd. Power semiconductor device
US7368319B2 (en) 2006-03-17 2008-05-06 Stats Chippac Ltd. Stacked integrated circuit package-in-package system
US7768075B2 (en) 2006-04-06 2010-08-03 Fairchild Semiconductor Corporation Semiconductor die packages using thin dies and metal substrates
CN100511588C (zh) 2006-04-14 2009-07-08 泰特科技股份有限公司 导线架型芯片级封装方法
US20070241441A1 (en) 2006-04-17 2007-10-18 Stats Chippac Ltd. Multichip package system
SG136822A1 (en) 2006-04-19 2007-11-29 Micron Technology Inc Integrated circuit devices with stacked package interposers
TW200743190A (en) 2006-05-10 2007-11-16 Chung-Cheng Wang A heat spreader for electrical device
JP5026736B2 (ja) 2006-05-15 2012-09-19 パナソニックヘルスケア株式会社 冷凍装置
CN101473437B (zh) 2006-06-20 2011-01-12 Nxp股份有限公司 集成电路以及采用该集成电路的装置
US20080023805A1 (en) * 2006-07-26 2008-01-31 Texas Instruments Incorporated Array-Processed Stacked Semiconductor Packages
TWI306658B (en) 2006-08-07 2009-02-21 Chipmos Technologies Inc Leadframe on offset stacked chips package
US7638868B2 (en) 2006-08-16 2009-12-29 Tessera, Inc. Microelectronic package
US7906844B2 (en) 2006-09-26 2011-03-15 Compass Technology Co. Ltd. Multiple integrated circuit die package with thermal performance
TWI370515B (en) 2006-09-29 2012-08-11 Megica Corp Circuit component
KR100825784B1 (ko) * 2006-10-18 2008-04-28 삼성전자주식회사 휨 및 와이어 단선을 억제하는 반도체 패키지 및 그제조방법
KR100885911B1 (ko) 2006-11-16 2009-02-26 삼성전자주식회사 열방출 특성을 개선한 반도체 패키지
JP4389228B2 (ja) 2006-11-29 2009-12-24 エルピーダメモリ株式会社 メモリモジュール
US7772683B2 (en) 2006-12-09 2010-08-10 Stats Chippac Ltd. Stacked integrated circuit package-in-package system
EP2102867B1 (en) 2006-12-14 2013-07-31 Rambus Inc. Multi-die memory device
JP2008177241A (ja) 2007-01-16 2008-07-31 Toshiba Corp 半導体パッケージ
CN101232004A (zh) 2007-01-23 2008-07-30 联华电子股份有限公司 芯片堆叠封装结构
CN101617400A (zh) 2007-01-31 2009-12-30 富士通微电子株式会社 半导体器件及其制造方法
JP5285224B2 (ja) 2007-01-31 2013-09-11 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 回路装置
JP2008198841A (ja) 2007-02-14 2008-08-28 Elpida Memory Inc 半導体装置
JP2008235576A (ja) 2007-03-20 2008-10-02 Fujitsu Ltd 電子部品の放熱構造及び半導体装置
US20080237844A1 (en) 2007-03-28 2008-10-02 Aleksandar Aleksov Microelectronic package and method of manufacturing same
US7638869B2 (en) 2007-03-28 2009-12-29 Qimonda Ag Semiconductor device
US20080237887A1 (en) 2007-03-29 2008-10-02 Hem Takiar Semiconductor die stack having heightened contact for wire bond
US7872356B2 (en) 2007-05-16 2011-01-18 Qualcomm Incorporated Die stacking system and method
US20080296717A1 (en) 2007-06-01 2008-12-04 Tessera, Inc. Packages and assemblies including lidded chips
JP2008306128A (ja) 2007-06-11 2008-12-18 Shinko Electric Ind Co Ltd 半導体装置およびその製造方法
US7619901B2 (en) 2007-06-25 2009-11-17 Epic Technologies, Inc. Integrated structures and fabrication methods thereof implementing a cell phone or other electronic system
KR100876889B1 (ko) 2007-06-26 2009-01-07 주식회사 하이닉스반도체 반도체 패키지 및 이를 이용한 멀티칩 반도체 패키지
SG148901A1 (en) 2007-07-09 2009-01-29 Micron Technology Inc Packaged semiconductor assemblies and methods for manufacturing such assemblies
KR101341566B1 (ko) 2007-07-10 2013-12-16 삼성전자주식회사 소켓, 검사 장치, 그리고 적층형 반도체 소자 제조 방법
US8299626B2 (en) 2007-08-16 2012-10-30 Tessera, Inc. Microelectronic package
US7442045B1 (en) 2007-08-17 2008-10-28 Centipede Systems, Inc. Miniature electrical ball and tube socket with self-capturing multiple-contact-point coupling
US20090051043A1 (en) 2007-08-21 2009-02-26 Spansion Llc Die stacking in multi-die stacks using die support mechanisms
US7872340B2 (en) 2007-08-31 2011-01-18 Stats Chippac Ltd. Integrated circuit package system employing an offset stacked configuration
US7880310B2 (en) 2007-09-28 2011-02-01 Intel Corporation Direct device attachment on dual-mode wirebond die
US7851267B2 (en) 2007-10-18 2010-12-14 Infineon Technologies Ag Power semiconductor module method
JP2009164160A (ja) 2007-12-28 2009-07-23 Panasonic Corp 半導体デバイス積層体および実装方法
US20090168374A1 (en) 2008-01-02 2009-07-02 Clayton James E Thin multi-chip flex module
JP5207868B2 (ja) 2008-02-08 2013-06-12 ルネサスエレクトロニクス株式会社 半導体装置
US8138610B2 (en) 2008-02-08 2012-03-20 Qimonda Ag Multi-chip package with interconnected stacked chips
US8354742B2 (en) 2008-03-31 2013-01-15 Stats Chippac, Ltd. Method and apparatus for a package having multiple stacked die
US8159052B2 (en) 2008-04-10 2012-04-17 Semtech Corporation Apparatus and method for a chip assembly including a frequency extending device
US7928562B2 (en) 2008-07-22 2011-04-19 International Business Machines Corporation Segmentation of a die stack for 3D packaging thermal management
US20100044861A1 (en) 2008-08-20 2010-02-25 Chin-Tien Chiu Semiconductor die support in an offset die stack
US8253231B2 (en) 2008-09-23 2012-08-28 Marvell International Ltd. Stacked integrated circuit package using a window substrate
KR101479461B1 (ko) 2008-10-14 2015-01-06 삼성전자주식회사 적층 패키지 및 이의 제조 방법
JP5056718B2 (ja) 2008-10-16 2012-10-24 株式会社デンソー 電子装置の製造方法
JP5176893B2 (ja) 2008-11-18 2013-04-03 日立金属株式会社 はんだボール
US8049339B2 (en) 2008-11-24 2011-11-01 Powertech Technology Inc. Semiconductor package having isolated inner lead
US7951643B2 (en) 2008-11-29 2011-05-31 Stats Chippac Ltd. Integrated circuit packaging system with lead frame and method of manufacture thereof
KR101011863B1 (ko) 2008-12-02 2011-01-31 앰코 테크놀로지 코리아 주식회사 반도체 패키지 및 그 제조 방법
US20100193930A1 (en) 2009-02-02 2010-08-05 Samsung Electronics Co., Ltd. Multi-chip semiconductor devices having conductive vias and methods of forming the same
US8026589B1 (en) * 2009-02-23 2011-09-27 Amkor Technology, Inc. Reduced profile stackable semiconductor package
JP5671681B2 (ja) 2009-03-05 2015-02-18 ピーエスフォー ルクスコ エスエイアールエルPS4 Luxco S.a.r.l. 積層型半導体装置
KR20120068985A (ko) 2009-03-13 2012-06-27 테세라, 인코포레이티드 본드 패드를 통과하여 연장된 비아를 갖는 마이크로전자 소자를 포함하는 적층형 마이크로전자 어셈블리
US8026608B2 (en) * 2009-03-24 2011-09-27 General Electric Company Stackable electronic package
KR101566407B1 (ko) 2009-03-25 2015-11-05 삼성전자주식회사 적층 메모리 소자
TWI401785B (zh) 2009-03-27 2013-07-11 Chipmos Technologies Inc 多晶片堆疊封裝
US8039316B2 (en) 2009-04-14 2011-10-18 Stats Chippac Ltd. Integrated circuit packaging system with stacked integrated circuit and heat spreader with openings and method of manufacture thereof
KR101601847B1 (ko) 2009-05-21 2016-03-09 삼성전자주식회사 반도체 패키지
KR20100134354A (ko) 2009-06-15 2010-12-23 삼성전자주식회사 반도체 패키지, 스택 모듈, 카드 및 전자 시스템
TWM370767U (en) 2009-06-19 2009-12-11 fu-zhi Huang Modulized computer
US20100327419A1 (en) 2009-06-26 2010-12-30 Sriram Muthukumar Stacked-chip packages in package-on-package apparatus, methods of assembling same, and systems containing same
TWI474331B (zh) 2009-06-30 2015-02-21 Hitachi Ltd Semiconductor device
KR20110041843A (ko) 2009-10-16 2011-04-22 엘지전자 주식회사 하이브리드 저장장치 및 그 동작방법
US20110085304A1 (en) 2009-10-14 2011-04-14 Irvine Sensors Corporation Thermal management device comprising thermally conductive heat spreader with electrically isolated through-hole vias
US20110309152A1 (en) 2010-06-22 2011-12-22 Kim Young-Sun Plastic card package and plastic card package manufacturing method
US10128206B2 (en) * 2010-10-14 2018-11-13 Taiwan Semiconductor Manufacturing Company, Ltd. Conductive pillar structure
US8553420B2 (en) 2010-10-19 2013-10-08 Tessera, Inc. Enhanced stacked microelectronic assemblies with central contacts and improved thermal characteristics
US8378478B2 (en) 2010-11-24 2013-02-19 Tessera, Inc. Enhanced stacked microelectronic assemblies with central contacts and vias connected to the central contacts
KR101118711B1 (ko) 2010-12-17 2012-03-12 테세라, 인코포레이티드 중앙 콘택을 구비한 적층형 마이크로전자 조립체
KR101061531B1 (ko) 2010-12-17 2011-09-01 테세라 리써치 엘엘씨 중앙 콘택을 구비하며 접지 또는 배전을 개선한 적층형 마이크로전자 조립체
TW201239998A (en) 2011-03-16 2012-10-01 Walton Advanced Eng Inc Method for mold array process to prevent peripheries of substrate exposed
US8304881B1 (en) 2011-04-21 2012-11-06 Tessera, Inc. Flip-chip, face-up and face-down wirebond combination package
US9013033B2 (en) 2011-04-21 2015-04-21 Tessera, Inc. Multiple die face-down stacking for two or more die
US8338963B2 (en) 2011-04-21 2012-12-25 Tessera, Inc. Multiple die face-down stacking for two or more die
US8928153B2 (en) 2011-04-21 2015-01-06 Tessera, Inc. Flip-chip, face-up and face-down centerbond memory wirebond assemblies
US8970028B2 (en) 2011-12-29 2015-03-03 Invensas Corporation Embedded heat spreader for package with multiple microelectronic elements and face-down connection
US8502390B2 (en) 2011-07-12 2013-08-06 Tessera, Inc. De-skewed multi-die packages
US8436457B2 (en) 2011-10-03 2013-05-07 Invensas Corporation Stub minimization for multi-die wirebond assemblies with parallel windows
US8723327B2 (en) 2011-10-20 2014-05-13 Invensas Corporation Microelectronic package with stacked microelectronic units and method for manufacture thereof

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6703713B1 (en) * 2002-09-10 2004-03-09 Siliconware Precision Industries Co., Ltd. Window-type multi-chip semiconductor package

Also Published As

Publication number Publication date
US20150115477A1 (en) 2015-04-30
CN103620778A (zh) 2014-03-05
TW201248812A (en) 2012-12-01
TW201546986A (zh) 2015-12-16
US9806017B2 (en) 2017-10-31
US8928153B2 (en) 2015-01-06
JP2014512688A (ja) 2014-05-22
TWI505420B (zh) 2015-10-21
KR20140027998A (ko) 2014-03-07
EP2700100A1 (en) 2014-02-26
US20120267796A1 (en) 2012-10-25
WO2012145201A1 (en) 2012-10-26
KR102005830B1 (ko) 2019-07-31
BR112013027142A2 (pt) 2017-01-10
US20180025967A1 (en) 2018-01-25

Similar Documents

Publication Publication Date Title
CN103620778B (zh) 倒装芯片、正面和背面中心键合存储线键合组件
US9875955B2 (en) Low cost hybrid high density package
US6462412B2 (en) Foldable, flexible laminate type semiconductor apparatus with reinforcing and heat-radiating plates
KR101925427B1 (ko) 적층가능 마이크로전자 패키지 구조
US9312239B2 (en) Enhanced stacked microelectronic assemblies with central contacts and improved thermal characteristics
JP5827342B2 (ja) 中央コンタクトを備え、グラウンド又は電源分配が改善された改良版積層型マイクロ電子アセンブリ
CN103620774B (zh) 倒装芯片、正面和背面线键合相组合的封装
JP2001077294A (ja) 半導体装置
US20030015803A1 (en) High-density multichip module and method for manufacturing the same
US8872318B2 (en) Through interposer wire bond using low CTE interposer with coarse slot apertures
JP4395003B2 (ja) 積層型半導体装置
KR20050120929A (ko) 플렉시블 인쇄회로기판을 이용한 멀티 스택 패키지 및 그제조방법

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20170517

Termination date: 20210411