JP4395003B2 - 積層型半導体装置 - Google Patents
積層型半導体装置 Download PDFInfo
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- JP4395003B2 JP4395003B2 JP2004134382A JP2004134382A JP4395003B2 JP 4395003 B2 JP4395003 B2 JP 4395003B2 JP 2004134382 A JP2004134382 A JP 2004134382A JP 2004134382 A JP2004134382 A JP 2004134382A JP 4395003 B2 JP4395003 B2 JP 4395003B2
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- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
- H01L25/105—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L27/00
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
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- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15151—Shape the die mounting substrate comprising an aperture, e.g. for underfilling, outgassing, window type wire connections
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- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
- H01L2924/15321—Connection portion the connection portion being formed on the die mounting surface of the substrate being a ball array, e.g. BGA
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
- H01L2924/1533—Connection portion the connection portion being formed on the die mounting surface of the substrate the connection portion being formed both on the die mounting surface of the substrate and outside the die mounting surface of the substrate
- H01L2924/15331—Connection portion the connection portion being formed on the die mounting surface of the substrate the connection portion being formed both on the die mounting surface of the substrate and outside the die mounting surface of the substrate being a ball array, e.g. BGA
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19102—Disposition of discrete passive components in a stacked assembly with the semiconductor or solid state device
- H01L2924/19104—Disposition of discrete passive components in a stacked assembly with the semiconductor or solid state device on the semiconductor or solid-state device, i.e. passive-on-chip
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
第3の配線基板28には半導体素子が直接搭載されていない。すなわち、第1の配線基板1や第2の配線基板8と異なり、第3の配線基板28には、半導体素子が接着剤を用いて接着固定されていない。
2 バンプ
3 第1の半導体素子
4 接着剤
5 電極パッド
6 外部電極端子
7 貫通孔
8 第2の配線基板
9 ワイヤ
10,10a,10b,10c,10d,10e,10f 熱伝導材
11 第2の半導体素子
12 接着剤
13 封止樹脂
14、34 電極パッド
15,35 導電性部材
20,20A,20B,20C,20D,20E,20F 積層型半導体装置
28 第3の配線基板
31 導体配線部
32 絶縁樹脂
Claims (5)
- 少なくとも第1の半導体素子と第2の半導体素子とを含む複数の半導体素子を内蔵する積層型半導体装置であって、
第1の半導体素子を搭載し、第1の半導体素子と電気的に接合された第1の配線基板と、
第2の半導体素子を搭載し、第2の半導体素子と電気的に接合され、かつ、前記第1の配線基板の上側に重なるように配置した第2の配線基板と、
前記第1の配線基板の、第1の半導体素子との電気的接合を阻害しない領域内に形成した貫通孔と、
前記第1の配線基板の、第1の半導体素子を搭載した面と反対側の面の電極パッドと、前記第1の配線基板の前記電極パッドと対向配置される前記第2の配線基板の、第2の半導体素子を搭載した面と反対側の面の電極パッドとを電気的に接続する導電性部材と、
前記第1の配線基板と前記第2の配線基板の間に挟持され、前記貫通孔を介して第1の半導体素子と前記第2の配線基板とに接触するように配置した熱伝導材と
を備えることを特徴とする積層型半導体装置。 - 少なくとも第1の半導体素子と第2の半導体素子とを含む複数の半導体素子を内蔵し、マザーボード上に搭載される積層型半導体装置であって、
第1の半導体素子を搭載し、第1の半導体素子と電気的に接合された第1の配線基板と、
第2の半導体素子を搭載し、第2の半導体素子と電気的に接合され、かつ、前記第1の配線基板の上側に重なるように配置した第2の配線基板と、
前記第1の配線基板の、第1の半導体素子との電気的接合を阻害しない領域内でかつ、第1の半導体素子の搭載領域の外側に形成した貫通孔と、
前記第1の配線基板の、第1の半導体素子を搭載した面と反対側の面の電極パッドと、前記第1の配線基板の前記電極パッドと対向配置される前記第2の配線基板の、第2の半導体素子を搭載した面と反対側の面の電極パッドとを電気的に接続する導電性部材と、
前記第1の配線基板と前記第2の配線基板の間に挟持され、前記貫通孔を介して、前記マザーボードと前記第2の配線基板とに接触するように配置した熱伝導材と
を備えることを特徴とする積層型半導体装置。 - 少なくとも第1の半導体素子と第2の半導体素子とを含む複数の半導体素子を内蔵する積層型半導体装置であって、
第1の半導体素子を搭載し、第1の半導体素子と電気的に接合された第1の配線基板と、
第2の半導体素子を搭載し、第2の半導体素子と電気的に接合され、かつ、前記第1の配線基板の上側に配置した第2の配線基板と、
前記第1の配線基板と前記第2の配線基板の間に配置し、前記第1及び前記第2の配線基板とそれぞれ電気的に接合され、かつ、前記第1の配線基板の上側に重なるように配置した第3の配線基板と、
前記第1の配線基板の、第1の半導体素子との電気的接合を阻害しない領域内に形成した第1の貫通孔と、
前記第3の配線基板の、前記第1及び前記第2の配線基板との電気的接合を阻害しない、前記第1の貫通孔と重なる領域内に形成した第2の貫通孔と、
前記第3の配線基板の、前記第2の配線基板と対向する面の電極パッドと、前記第3の配線基板の前記電極パッドと対向配置される前記第2の配線基板の、第2の半導体素子を搭載した面と反対側の面の電極パッドとを電気的に接続する第1の導電性部材と、
前記第3の配線基板の、前記第1の配線基板と対向する面の電極パッドと、前記第3の配線基板の前記電極パッドと対向配置される前記第1の配線基板の、第1の半導体素子を搭載した面と反対側の面の電極パッドとを電気的に接続する第2の導電性部材と、
前記第1の配線基板と前記第3の配線基板の間に挟持され、前記第1の貫通孔及び第2の貫通孔を介して第1の半導体素子と前記第2の配線基板とに接触するように配置した熱伝導材と
を備えることを特徴とする積層型半導体装置。 - 前記第1の配線基板及び前記第2の配線基板は、金属を含有させた熱拡散層を備えることを特徴とする請求項1又は2記載の積層型半導体装置。
- 前記熱伝導材は、金属を含有させたエポキシ樹脂の接着剤を用いて、少なくとも前記第2の配線基板に接着固定されることを特徴とする請求項1乃至3のいずれかに記載の積層型半導体装置。
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JP2004134382A JP4395003B2 (ja) | 2004-04-28 | 2004-04-28 | 積層型半導体装置 |
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JP4395003B2 true JP4395003B2 (ja) | 2010-01-06 |
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