CN101933174B - 用于制造电子器件的方法和电子器件 - Google Patents

用于制造电子器件的方法和电子器件 Download PDF

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Publication number
CN101933174B
CN101933174B CN2009801036737A CN200980103673A CN101933174B CN 101933174 B CN101933174 B CN 101933174B CN 2009801036737 A CN2009801036737 A CN 2009801036737A CN 200980103673 A CN200980103673 A CN 200980103673A CN 101933174 B CN101933174 B CN 101933174B
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layer
barrier layer
barrier
layers
organic
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Chinese (zh)
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CN101933174A (zh
Inventor
C·施米德
T·施伦克
H·朱尔
R·佩佐尔德
M·克莱因
K·霍伊泽尔
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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Priority claimed from DE102008019900A external-priority patent/DE102008019900A1/de
Priority claimed from DE102008031405A external-priority patent/DE102008031405A1/de
Priority claimed from DE102008048472A external-priority patent/DE102008048472A1/de
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of CN101933174A publication Critical patent/CN101933174A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
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    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
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    • H01L23/00—Details of semiconductor or other solid state devices
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    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3135—Double encapsulation or coating and encapsulation
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    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
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    • H05B33/02—Details
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
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    • H10H20/80—Constructional details
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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Inorganic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Laminated Bodies (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Formation Of Insulating Films (AREA)
  • Photovoltaic Devices (AREA)
  • Chemical Vapour Deposition (AREA)
CN2009801036737A 2008-01-30 2009-01-29 用于制造电子器件的方法和电子器件 Active CN101933174B (zh)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
DE102008006721 2008-01-30
DE102008006721.0 2008-01-30
DE102008019900A DE102008019900A1 (de) 2008-01-30 2008-04-21 Verfahren zur Herstellung eines organischen elektronischen Bauelements und organisches elektronisches Bauelement
DE102008019900.1 2008-04-21
DE102008031405.6 2008-07-02
DE102008031405A DE102008031405A1 (de) 2008-07-02 2008-07-02 Verfahren zur Herstellung eines organischen elektronischen Bauelements und organisches elektronisches Bauelement
DE102008048472A DE102008048472A1 (de) 2008-09-23 2008-09-23 Vorrichtung mit Verkapselungsanordnung
DE102008048472.5 2008-09-23
PCT/DE2009/000133 WO2009095005A1 (de) 2008-01-30 2009-01-29 Verfahren zur herstellung eines elektronischen bauelements und elektronisches bauelement

Publications (2)

Publication Number Publication Date
CN101933174A CN101933174A (zh) 2010-12-29
CN101933174B true CN101933174B (zh) 2013-05-01

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CN2009801036737A Active CN101933174B (zh) 2008-01-30 2009-01-29 用于制造电子器件的方法和电子器件
CN2009801036722A Pending CN101933173A (zh) 2008-01-30 2009-01-29 用于制造电子器件的方法和电子器件
CN2009801037636A Active CN101933175B (zh) 2008-01-30 2009-01-29 具有封装单元的装置

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Application Number Title Priority Date Filing Date
CN2009801036722A Pending CN101933173A (zh) 2008-01-30 2009-01-29 用于制造电子器件的方法和电子器件
CN2009801037636A Active CN101933175B (zh) 2008-01-30 2009-01-29 具有封装单元的装置

Country Status (8)

Country Link
US (6) US8658442B2 (enExample)
EP (3) EP2238632B1 (enExample)
JP (4) JP2011515789A (enExample)
KR (6) KR101747004B1 (enExample)
CN (3) CN101933174B (enExample)
DE (3) DE112009000755A5 (enExample)
TW (3) TWI420722B (enExample)
WO (3) WO2009094997A1 (enExample)

Families Citing this family (160)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI420722B (zh) 2008-01-30 2013-12-21 歐斯朗奧托半導體股份有限公司 具有封裝單元之裝置
EP2356372B1 (de) 2008-12-11 2016-08-10 OSRAM OLED GmbH Organische leuchtdiode und beleuchtungsmittel
DE102009024411A1 (de) 2009-03-24 2010-09-30 Osram Opto Semiconductors Gmbh Dünnschichtverkapselung für ein optoelektronisches Bauelement, Verfahren zu dessen Herstellung und optoelektronisches Bauelement
DE102009022900A1 (de) * 2009-04-30 2010-11-18 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zu dessen Herstellung
DE102009034822A1 (de) * 2009-07-27 2011-02-03 Osram Opto Semiconductors Gmbh Elektronisches Bauelement sowie elektischer Kontakt
KR101089715B1 (ko) * 2009-11-05 2011-12-07 한국기계연구원 다층 박막형 봉지막 및 이의 제조방법
US9287113B2 (en) 2012-11-08 2016-03-15 Novellus Systems, Inc. Methods for depositing films on sensitive substrates
US9997357B2 (en) 2010-04-15 2018-06-12 Lam Research Corporation Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors
US9257274B2 (en) 2010-04-15 2016-02-09 Lam Research Corporation Gapfill of variable aspect ratio features with a composite PEALD and PECVD method
WO2012030421A1 (en) * 2010-05-25 2012-03-08 Qd Vision, Inc. Devices and methods
KR101793047B1 (ko) 2010-08-03 2017-11-03 삼성디스플레이 주식회사 플렉서블 디스플레이 및 이의 제조 방법
DE102010033137A1 (de) * 2010-08-03 2012-02-09 Osram Opto Semiconductors Gmbh Leuchtdiodenchip
JP5412634B2 (ja) * 2010-09-14 2014-02-12 後藤電子 株式会社 有機ｅｌ表示装置および有機ｅｌ照明装置
WO2012039310A1 (ja) * 2010-09-22 2012-03-29 株式会社アルバック 有機ｅｌ素子の製造方法、成膜装置、有機ｅｌ素子
US8547015B2 (en) * 2010-10-20 2013-10-01 3M Innovative Properties Company Light extraction films for organic light emitting devices (OLEDs)
KR102138213B1 (ko) * 2010-11-24 2020-07-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 유기 광 디바이스 및 유기 광 디바이스의 보호 부재
TWI473305B (zh) * 2011-03-10 2015-02-11 Formosa Epitaxy Inc Light emitting diode structure
DE102011005612A1 (de) * 2011-03-16 2012-09-20 Osram Opto Semiconductors Gmbh Organisches Optoelektronisches Bauelement und Verfahren zur Herstellung eines Optoelektronischen Bauelements
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