TWI829584B - 電漿增強型原子層沉積製程 - Google Patents
電漿增強型原子層沉積製程 Download PDFInfo
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- TWI829584B TWI829584B TW112115120A TW112115120A TWI829584B TW I829584 B TWI829584 B TW I829584B TW 112115120 A TW112115120 A TW 112115120A TW 112115120 A TW112115120 A TW 112115120A TW I829584 B TWI829584 B TW I829584B
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- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
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- H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
- H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
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| TW111112710A TWI803270B (zh) | 2017-05-16 | 2018-05-04 | Peald製程和通過其來選擇性地於基板的介電表面上沉積氧化物的方法 |
| TW107115198A TWI763839B (zh) | 2017-05-16 | 2018-05-04 | 電漿增強型原子層沉積製程和通過其來選擇性地於基板的介電表面上沉積氧化物的方法 |
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| TW107115198A TWI763839B (zh) | 2017-05-16 | 2018-05-04 | 電漿增強型原子層沉積製程和通過其來選擇性地於基板的介電表面上沉積氧化物的方法 |
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| CN115233183B (zh) | 2025-01-10 |
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