JP2023018059A - 誘電体上の酸化物の選択的peald - Google Patents
誘電体上の酸化物の選択的peald Download PDFInfo
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- JP2023018059A JP2023018059A JP2022185876A JP2022185876A JP2023018059A JP 2023018059 A JP2023018059 A JP 2023018059A JP 2022185876 A JP2022185876 A JP 2022185876A JP 2022185876 A JP2022185876 A JP 2022185876A JP 2023018059 A JP2023018059 A JP 2023018059A
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 134
- 239000002184 metal Substances 0.000 claims abstract description 133
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- 238000000034 method Methods 0.000 claims abstract description 96
- 238000000151 deposition Methods 0.000 claims abstract description 91
- 239000000758 substrate Substances 0.000 claims abstract description 88
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Images
Classifications
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- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
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- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- C23C16/45531—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making ternary or higher compositions
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- C—CHEMISTRY; METALLURGY
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- C23C16/45536—Use of plasma, radiation or electromagnetic fields
- C23C16/45542—Plasma being used non-continuously during the ALD reactions
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- C—CHEMISTRY; METALLURGY
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
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Abstract
Description
選択性は、[(第一の表面上の堆積)-(第二の表面上の堆積)]/(第一の表面上の堆積)によって計算される百分率として示されることができる。堆積は様々な手段のいずれでも測定されうる。いくつかの実施形態では、堆積は堆積した材料の測定された厚さとして示されてもよい。いくつかの実施形態では、堆積は堆積した材料の測定量として示されてもよい。
いくつかの実施形態では、本明細書に記載されるように、金属表面と比較して誘電体表面上に酸化物のその後の選択的堆積を促進または強化するために、パッシベーション層は、第二の誘電体表面と比較して基材の第一の金属表面または金属性表面上に選択的に堆積する。パッシベーション層の選択的堆積において、いくつかの実施形態では、第一の有機反応物質は、気化されて第一の反応物質蒸気を形成する。気化される反応物質は、標準的な温度および圧力条件(室温および大気圧)下で液体または固体であってもよい。いくつかの実施形態では、気化される反応物質は、アミンなどの有機前駆体、例えば1,6-ジアミノヘキサン(DAH)などのジアミン、または別の有機前駆体、例えばピロメリト酸二無水物(PMDA)などの二無水物を含む。次いで、基材は第一の反応物質蒸気に曝露され、有機膜が選択的に堆積する。方法は追加的な工程を含むことができ、繰り返すことができる。例えば、いくつかの実施形態では、以下に記載するように、二つの反応物質が利用され、誘電体表面と比較して金属表面上にパッシベーション層を選択的に堆積させる。
上述のように、いくつかの実施形態では、SiOCは、金属または金属性表面と比較して誘電体表面上に選択的に堆積される。SiOCは、例えば、本明細書に記載されるように、または参照により本明細書に組み込まれる、米国特許出願第15/588,026号に記載されるように、堆積しうる。
上述のように、いくつかの実施形態では、金属酸化物は、金属または金属性表面と比較して誘電体表面上に選択的に堆積される。金属酸化物は、例えば、本明細書に記載されるように、または参照により本明細書に組み込まれる、米国特許出願第62/502,118号に記載されるように、堆積しうる。
Claims (24)
- 基材の誘電体表面上に酸化物を選択的に堆積させるためのプラズマ増強原子層堆積(PEALD)プロセスであって、
第一の誘電体表面および第二の金属表面を含む基材を提供することと、
前記基材を、酸素を含む第一のシリコン前駆体と、水素を含むが酸素を含まないガス中で生成されたプラズマからの反応種を含む第二の反応物質とに交互にかつ連続的に接触させることを含む少なくとも一つの堆積サイクルを実施することとを含み、
前記第一の前駆体は、前記基材表面上に吸着し、前記第二の反応物質は、前記吸着した第一の前駆体と反応して、前記第二の金属表面と比較して前記第一の誘電体表面上に酸化物を選択的に形成する、プラズマ増強原子層堆積(PEALD)プロセス。 - 前記第二の反応物質はまた、前記金属表面と反応して、前記金属表面上の任意の金属酸化物を還元する、請求項1に記載の方法。
- 前記第二の反応物質はまた、前記金属表面と反応して、前記金属表面から酸素を除去する、請求項1に記載の方法。
- 前記金属表面から酸素を除去することが、前記金属表面からOH基または酸素架橋を除去することを含む、請求項3に記載の方法。
- 前記誘電体表面がSiO2を含む、請求項1に記載の方法。
- 前記誘電体表面がlow-k材料を含む、請求項1に記載の方法。
- 前記金属表面がRu、Co、CuまたはWを含む、請求項1に記載の方法。
- 前記金属表面がTiNを含む、請求項1に記載の方法。
- 前記酸化物がSiO2、SiOCまたはSiOCNである、請求項1に記載の方法。
- 前記酸化物が金属酸化物である、請求項1に記載の方法。
- 前記酸化物が金属およびシリコンを含む、請求項1に記載の方法。
- 前記第一の前駆体が、3-メトキシプロピルトリメトキシシラン(MPTMS)を含む、請求項1に記載の方法。
- 前記堆積サイクルが、前記基材を前記第二の反応物質と接触させることで始まる、請求項1に記載の方法。
- 前記堆積サイクルを開始する前に、前記基材を第三のプラズマ反応物質と接触させることをさらに含む、請求項1に記載の方法。
- 前記堆積サイクルが二回以上繰り返されて、前記誘電体表面上に所望の厚さの酸化物膜を形成する、請求項1に記載の方法。
- 前記金属表面がパッシベーション層を含む、請求項1に記載の方法。
- 前記パッシベーション層が有機パッシベーション層である、請求項16に記載の方法。
- 前記有機パッシベーション層が、前記第一の堆積サイクルの開始前に、前記誘電体表面と比較して前記金属表面上に選択的に堆積される、請求項17に記載の方法。
- 前記パッシベーション層が、各堆積サイクル中に前記第二のプラズマ反応物質によってエッチングされる、請求項16に記載の方法。
- プラズマ増強原子層堆積(PEALD)プロセスによって、基材の金属表面と比較して前記基材の誘電体表面上にSiOC薄膜を選択的に堆積させる方法であって、前記基材を、シリコンおよび酸素を含む第一の反応物質と、水素を含むが酸素を含まないガス中で生成されたプラズマを含む第二の反応物質とに交互にかつ連続的に接触させることを含む、方法。
- 前記第二の反応物質は、H2およびArを含むガス中にプラズマを生成することにより形成される、請求項20に記載の方法。
- 前記プラズマが約30~200Wの電力を使用して生成される、請求項21に記載の方法。
- 前記PEALDプロセスが約50~300℃の堆積温度で実施される、請求項20に記載の方法。
- 前記金属表面がCo、Ru、Ni、W、TiN、CuまたはTaを含む、請求項20に記載の方法。
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