TW502284B - Multichamber system of etching facility for manufacturing semiconductor device - Google Patents

Multichamber system of etching facility for manufacturing semiconductor device Download PDF

Info

Publication number
TW502284B
TW502284B TW087117504A TW87117504A TW502284B TW 502284 B TW502284 B TW 502284B TW 087117504 A TW087117504 A TW 087117504A TW 87117504 A TW87117504 A TW 87117504A TW 502284 B TW502284 B TW 502284B
Authority
TW
Taiwan
Prior art keywords
transfer
manufacturing semiconductor
wafers
cassette
scope
Prior art date
Application number
TW087117504A
Other languages
English (en)
Inventor
Ki-Sang Kim
Gyu-Chan Jeoung
Gyu-Hwan Kwag
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Application granted granted Critical
Publication of TW502284B publication Critical patent/TW502284B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67178—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers vertical arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67184—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the presence of more than one transfer chamber
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
    • Y10S414/137—Associated with semiconductor wafer handling including means for charging or discharging wafer cassette
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
    • Y10S414/139—Associated with semiconductor wafer handling including wafer charging or discharging means for vacuum chamber
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
    • Y10S414/141—Associated with semiconductor wafer handling includes means for gripping wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)

Description

中Μ專利範圍 一藉由施用控制訊號至該傳輸機器人與該水平驅 動部來控制該傳輸機器人與該水平驅動部之控制器。 如申睛專利範圍第9項之用於製造半導體元件之姓刻 叹備的複室系統，其中該傳輸機構進一步包含一垂直 驅動部，其係在自該控制器接收一控制訊號時，垂直 地移動該傳輸機器人。 如申請專利範圍第9項之用於製造半導體元件之餘刻 設備的複室系統，其中一真空管線係安裝於該傳輸臂 上，以真空吸附晶圓。 如申請專利範圍f 9項之用☆製造半導體元件之姓刻 設備的複室系統，其中該傳輸臂之特徵在於：設置有 數個傳輸臂，以同時各自地輸送數片晶圓。 如申請專利範圍第9項之用於製造半導體元件之蝕刻 设備的複室系統，其中該水平驅動部包含一電動機或 一氣紅。 如申請專利範圍第10項之用於製造半導體元件之蝕 刻設備的複室系統，其中該垂直驅動部包含一電動機 或一氣缸。 如申請專利範圍第1項之用於製造半導體元件之蝕刻 設備的複室系統，其中該傳輸機構之特徵在於··數個 傳輸機構係被安裝成，以當該傳輸路徑伸延時，可交 互地供給/取走晶圓。 如申請專利範圍第1項之用於製造半導體元件之蝕刻 設備的複室系統，其中該傳輸機構之特徵在於··加工 502284
六、申請專利範圍 前該等被堆置於安裝在-第一卡g台之一卡£上的晶 圓係被傳送至該加工室，且該加工後的晶圓係被傳送 至一位於可使該晶圓易於傳送至下一個程序之第二卡 匣台上。 α -㈣於製造半導體元件之_設備的複室系統，其 包括： 一用於安裝一具有晶圓堆置於其上之卡匣的卡匣 台； 鄰近至該卡匣台上之晶圓的傳輸路徑，以提供 一用於傳輸晶®之空間，該路徑係處於大氣廢力下； 數個對準於該傳輸路徑的加工室，該等加工室係 成多層平行； 一安裝於該傳輸路徑内的傳輸機構，其係用於負 載與卸下堆置於該卡匣台上之晶圓；且 至少一負載鎖定室，其係連接至該加工室之一側 以作為晶圓之準備區域。 18. 如申請專利_第17項之詩製造半導體元件之钱 刻設備的複室“，其中該加卫室係以2至5層 構。 如申請專利範㈣17項之用於製料導體元件之蚀 刻設備的複室“，其中該負載鎖定室包含： 用；自。玄傳輸機構接收晶圓並將晶圓傳送至該 加工室的傳輸臂； ° 用於移動該傳輪臂之内部傳輸器；及 24 502284 六、申請專利範圍 分別形成於該傳輪路徑之側邊與該加工室之側邊 上的門，其可選擇性地打開/關閉，以允許該等晶圓通 過0 2〇·如申請專利範圍第19項之用於製造半導體元件之蝕 刻没備的複室系統，其中該傳輸臂之特徵在於：設置 有數個傳輸臂，以同時各自地輸送數片晶圓。 21·如申請專利範圍第17項之用於製造半導體元件之蝕 刻設備的複室系統，其中該傳輸機構包含： 一具有一真空管線安裝於其上，以選擇性地真空 吸附晶圓之傳輸臂； 一藉由移動該傳輸臂而將該等晶圓負載/卸下至 加工室内之傳輸機器人； 一用於垂直地移動該傳輸機器人之垂直驅動部； 一用於水平地移動該傳輸機器人之水平驅動部； 及 一藉由施用控制訊號至該傳輸機器人、該垂直驅 動部與水平驅動部來控制該傳輸機器人、該垂直驅動 部與水平驅動部之控制器。 2·如申凊專利範圍第21項之用於製造半導體元件之钱 刻认備的複室系統，其中該傳輸臂之特徵在於··設置 有數個傳輸臂，以同時各自地輸送數片晶圓。 23·如申請專利範圍第21項之用於製造半導體元件之餘 刻設備的複室系統，其中該垂直驅動部與該水平驅動 部包含一電動機或一氣紅。 25 502284
六、申請專利範圍 24·如申請專利範圍第17項之用於製造半導體元件之蝕 刻設備的複室系統，其中該傳輸機構之特徵在於··安 裝有數個傳輸機構，以當該傳输路徑延伸時，可交互 地供給/取走晶圓。 25·如申請專利範圍第17項之用於製造半導體元件之蝕 刻設備的複室系統，其中該傳輸機構之特徵在於：加 工前該等被堆置於安裝在一第一卡匣台之一卡匣上的 晶圓係被傳送至該加工室，且該加工後的晶圓係被傳 送至一位於可使該晶圓易於傳送至下一個程序之第二 卡匣台上。 26· —種用於製造半導體元件之蝕刻設備的複室系統，其 包括： 一用於安裝一具有於加工前堆置於其上之晶圓的 卡匣之第一卡匣台； 一用於對附於該第一卡匣台上之晶圓的傳輸提供 一空間之矩形傳輸路徑； 數個對齊於該傳輸路徑之側邊上的加工室，該等 加工室係成多層平行； 一安裝於該傳輸路徑内的傳輸機構，其係垂直/ 水平地產生一交互移動並將堆置於該第一卡匣台上之 晶圓負載/卸下至數個加工室；及 一置於該第一卡匣台對面並安裝一具有於加工後 堆置於其上之晶圓的卡匣之第二卡匣台。 27·如申請專利範圍第26項之用於製造半導體元件之蝕 26 502284 六、申請專利範圍 刻設備的複室系統，其中該傳輸機構包含： 一具有一用以選擇性地真空吸附晶圓之真空管線 的傳輸臂； 一藉由移動該傳輸臂而將該等晶圓負載/卸下至 加工室内之傳輸機器人； 一用於垂直地移動該傳輸機器人之垂直驅動部； 一用於水平地移動該傳輸機器人之水平驅動部； 及 一藉由施用控制訊號至該傳輸機器人、該垂直驅 動部與水平驅動部來控制該傳輸機器人、該垂直驅動 部與水平驅動部之控制器。 27
TW087117504A 1998-04-21 1998-10-22 Multichamber system of etching facility for manufacturing semiconductor device TW502284B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019980014228A KR100265287B1 (ko) 1998-04-21 1998-04-21 반도체소자 제조용 식각설비의 멀티챔버 시스템

Publications (1)

Publication Number Publication Date
TW502284B true TW502284B (en) 2002-09-11

Family

ID=19536537

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087117504A TW502284B (en) 1998-04-21 1998-10-22 Multichamber system of etching facility for manufacturing semiconductor device

Country Status (5)

Country Link
US (5) US6503365B1 (zh)
JP (3) JPH11307614A (zh)
KR (1) KR100265287B1 (zh)
DE (2) DE19964479B4 (zh)
TW (1) TW502284B (zh)

Families Citing this family (355)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100265287B1 (ko) * 1998-04-21 2000-10-02 윤종용 반도체소자 제조용 식각설비의 멀티챔버 시스템
JP4330703B2 (ja) * 1999-06-18 2009-09-16 東京エレクトロン株式会社 搬送モジュール及びクラスターシステム
US6410455B1 (en) * 1999-11-30 2002-06-25 Wafermasters, Inc. Wafer processing system
US6949143B1 (en) * 1999-12-15 2005-09-27 Applied Materials, Inc. Dual substrate loadlock process equipment
US6919001B2 (en) * 2000-05-01 2005-07-19 Intevac, Inc. Disk coating system
JP2004523880A (ja) * 2000-09-15 2004-08-05 アプライド　マテリアルズ　インコーポレイテッド 処理装置用ダブル二重スロット式ロードロック
US6790286B2 (en) * 2001-01-18 2004-09-14 Dainippon Screen Mfg. Co. Ltd. Substrate processing apparatus
KR100398877B1 (ko) * 2001-05-09 2003-09-19 삼성전자주식회사 현상기 소음 및 진동방지구조를 갖는 화상형성장치
KR100422467B1 (ko) * 2001-05-09 2004-03-12 삼성전자주식회사 반도체장치 제조설비
US6852194B2 (en) * 2001-05-21 2005-02-08 Tokyo Electron Limited Processing apparatus, transferring apparatus and transferring method
JP4078813B2 (ja) * 2001-06-12 2008-04-23 ソニー株式会社 成膜装置および成膜方法
US20030022498A1 (en) * 2001-07-27 2003-01-30 Jeong In Kwon CMP system and method for efficiently processing semiconductor wafers
KR100440762B1 (ko) * 2001-08-30 2004-07-21 주성엔지니어링(주) 적층식 다중 클러스터 장비
US7316966B2 (en) * 2001-09-21 2008-01-08 Applied Materials, Inc. Method for transferring substrates in a load lock chamber
JP2003183728A (ja) * 2001-12-14 2003-07-03 Jh Corp 真空熱処理装置
KR100454393B1 (ko) * 2001-12-18 2004-10-26 코스텍시스템(주) 복층 수직형 매엽식 반도체 웨이퍼 처리장치
JP2003293134A (ja) * 2002-04-09 2003-10-15 Tdk Corp 薄膜形成装置および方法、および当該装置を用いた電子部品の製造方法
TWI294155B (en) * 2002-06-21 2008-03-01 Applied Materials Inc Transfer chamber for vacuum processing system
US7959395B2 (en) * 2002-07-22 2011-06-14 Brooks Automation, Inc. Substrate processing apparatus
US8960099B2 (en) * 2002-07-22 2015-02-24 Brooks Automation, Inc Substrate processing apparatus
US20070183871A1 (en) * 2002-07-22 2007-08-09 Christopher Hofmeister Substrate processing apparatus
US7988398B2 (en) 2002-07-22 2011-08-02 Brooks Automation, Inc. Linear substrate transport apparatus
US7575406B2 (en) * 2002-07-22 2009-08-18 Brooks Automation, Inc. Substrate processing apparatus
CN1711369B (zh) 2002-11-15 2011-07-13 欧瑞康日光特吕巴赫股份公司 用于真空处理两维加长基片的装置及加工这种基片的方法
US6939403B2 (en) * 2002-11-19 2005-09-06 Blue29, Llc Spatially-arranged chemical processing station
MXPA05007215A (es) * 2003-01-02 2005-09-12 Univ Loma Linda Med Sistema para administracion de configuracion y recuperacion para sistema de terapia con haz de protones.
KR100566697B1 (ko) * 2003-08-05 2006-04-03 삼성전자주식회사 반도체 소자 제조용 멀티 챔버 시스템 및 이를 이용한반도체 소자의 제조방법
JP2005101584A (ja) * 2003-08-28 2005-04-14 Suss Microtec Test Systems Gmbh 基板を検査する装置
CN101894778A (zh) * 2003-08-29 2010-11-24 交叉自动控制公司 用于半导体处理的方法和装置
US7207766B2 (en) * 2003-10-20 2007-04-24 Applied Materials, Inc. Load lock chamber for large area substrate processing system
KR100578134B1 (ko) * 2003-11-10 2006-05-10 삼성전자주식회사 멀티 챔버 시스템
US10086511B2 (en) 2003-11-10 2018-10-02 Brooks Automation, Inc. Semiconductor manufacturing systems
US8267632B2 (en) 2003-11-10 2012-09-18 Brooks Automation, Inc. Semiconductor manufacturing process modules
US8639489B2 (en) * 2003-11-10 2014-01-28 Brooks Automation, Inc. Methods and systems for controlling a semiconductor fabrication process
US20070282480A1 (en) * 2003-11-10 2007-12-06 Pannese Patrick D Methods and systems for controlling a semiconductor fabrication process
WO2005048313A2 (en) 2003-11-10 2005-05-26 Blueshift Technologies, Inc. Methods and systems for handling workpieces in a vacuum-based semiconductor handling system
US8696298B2 (en) * 2003-11-10 2014-04-15 Brooks Automation, Inc. Semiconductor manufacturing process modules
US8639365B2 (en) * 2003-11-10 2014-01-28 Brooks Automation, Inc. Methods and systems for controlling a semiconductor fabrication process
US8313277B2 (en) * 2003-11-10 2012-11-20 Brooks Automation, Inc. Semiconductor manufacturing process modules
US7458763B2 (en) 2003-11-10 2008-12-02 Blueshift Technologies, Inc. Mid-entry load lock for semiconductor handling system
US20070269297A1 (en) 2003-11-10 2007-11-22 Meulen Peter V D Semiconductor wafer handling and transport
US7274429B2 (en) * 2003-12-10 2007-09-25 Asml Netherlands B.V. Integrated lithographic fabrication cluster
US7784164B2 (en) * 2004-06-02 2010-08-31 Applied Materials, Inc. Electronic device manufacturing chamber method
US20060201074A1 (en) * 2004-06-02 2006-09-14 Shinichi Kurita Electronic device manufacturing chamber and methods of forming the same
TWI298895B (en) * 2004-06-02 2008-07-11 Applied Materials Inc Electronic device manufacturing chamber and methods of forming the same
US7497414B2 (en) * 2004-06-14 2009-03-03 Applied Materials, Inc. Curved slit valve door with flexible coupling
US20060102078A1 (en) * 2004-11-18 2006-05-18 Intevac Inc. Wafer fab
US7611322B2 (en) * 2004-11-18 2009-11-03 Intevac, Inc. Processing thin wafers
TWI278416B (en) * 2004-12-09 2007-04-11 Au Optronics Corp Cassette stocker
US9099506B2 (en) * 2005-03-30 2015-08-04 Brooks Automation, Inc. Transfer chamber between workstations
US20090140174A1 (en) * 2005-03-30 2009-06-04 Panasonic Corporation Impurity Introducing Apparatus and Impurity Introducing Method
US20060273815A1 (en) * 2005-06-06 2006-12-07 Applied Materials, Inc. Substrate support with integrated prober drive
US20070006936A1 (en) * 2005-07-07 2007-01-11 Applied Materials, Inc. Load lock chamber with substrate temperature regulation
US7845891B2 (en) * 2006-01-13 2010-12-07 Applied Materials, Inc. Decoupled chamber body
KR100758298B1 (ko) * 2006-03-03 2007-09-12 삼성전자주식회사 기판 처리 장치 및 방법
US8398355B2 (en) * 2006-05-26 2013-03-19 Brooks Automation, Inc. Linearly distributed semiconductor workpiece processing tool
US7665951B2 (en) * 2006-06-02 2010-02-23 Applied Materials, Inc. Multiple slot load lock chamber and method of operation
US7845618B2 (en) 2006-06-28 2010-12-07 Applied Materials, Inc. Valve door with ball coupling
US8741096B2 (en) * 2006-06-29 2014-06-03 Wonik Ips Co., Ltd. Apparatus for semiconductor processing
KR100829920B1 (ko) * 2006-07-25 2008-05-16 세메스 주식회사 복층 구조의 반도체 제조 설비 및 그의 웨이퍼 이송 방법
US20080025821A1 (en) * 2006-07-25 2008-01-31 Applied Materials, Inc. Octagon transfer chamber
US8124907B2 (en) * 2006-08-04 2012-02-28 Applied Materials, Inc. Load lock chamber with decoupled slit valve door seal compartment
US7738987B2 (en) * 2006-11-28 2010-06-15 Tokyo Electron Limited Device and method for controlling substrate processing apparatus
KR100717990B1 (ko) * 2007-01-16 2007-05-14 (주)인터노바 반도체 자재 처리를 위한 이송 시스템
US20080251019A1 (en) * 2007-04-12 2008-10-16 Sriram Krishnaswami System and method for transferring a substrate into and out of a reduced volume chamber accommodating multiple substrates
DE102007022431A1 (de) 2007-05-09 2008-11-13 Leybold Optics Gmbh Behandlungssystem für flache Substrate
JP5006122B2 (ja) * 2007-06-29 2012-08-22 株式会社Ｓｏｋｕｄｏ 基板処理装置
JP5128918B2 (ja) * 2007-11-30 2013-01-23 株式会社Ｓｏｋｕｄｏ 基板処理装置
US20090162170A1 (en) * 2007-12-19 2009-06-25 Asm Japan K.K. Tandem type semiconductor-processing apparatus
JP5001828B2 (ja) 2007-12-28 2012-08-15 株式会社Ｓｏｋｕｄｏ 基板処理装置
JP5179170B2 (ja) 2007-12-28 2013-04-10 株式会社Ｓｏｋｕｄｏ 基板処理装置
JP5405235B2 (ja) * 2008-09-05 2014-02-05 Ｎｔｎ株式会社 生産設備及び生産システム
US20100116205A1 (en) * 2008-11-07 2010-05-13 Jacob Newman Process equipment architecture
JP4920667B2 (ja) * 2008-12-03 2012-04-18 アドヴァンスド・ディスプレイ・プロセス・エンジニアリング・コーポレーション・リミテッド 基板処理装置
US8367565B2 (en) * 2008-12-31 2013-02-05 Archers Inc. Methods and systems of transferring, docking and processing substrates
US20100162955A1 (en) * 2008-12-31 2010-07-01 Lawrence Chung-Lai Lei Systems and methods for substrate processing
US7897525B2 (en) * 2008-12-31 2011-03-01 Archers Inc. Methods and systems of transferring, docking and processing substrates
US20100162954A1 (en) * 2008-12-31 2010-07-01 Lawrence Chung-Lai Lei Integrated facility and process chamber for substrate processing
US8110511B2 (en) * 2009-01-03 2012-02-07 Archers Inc. Methods and systems of transferring a substrate to minimize heat loss
US9394608B2 (en) 2009-04-06 2016-07-19 Asm America, Inc. Semiconductor processing reactor and components thereof
KR101146981B1 (ko) * 2009-06-02 2012-05-22 삼성모바일디스플레이주식회사 증착 장치 및 그 제어 방법
US8802201B2 (en) 2009-08-14 2014-08-12 Asm America, Inc. Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
US8602706B2 (en) * 2009-08-17 2013-12-10 Brooks Automation, Inc. Substrate processing apparatus
JP5358366B2 (ja) 2009-09-14 2013-12-04 東京エレクトロン株式会社 基板処理装置及び方法
JP2013529383A (ja) * 2010-05-07 2013-07-18 ナノセミコン カンパニー リミテッド 一体型半導体処理装置
JP5503006B2 (ja) * 2010-08-06 2014-05-28 東京エレクトロン株式会社 基板処理システム、搬送モジュール、基板処理方法及び半導体素子の製造方法
CN102569011A (zh) * 2010-12-13 2012-07-11 北京北方微电子基地设备工艺研究中心有限责任公司 晶片处理系统和晶片处理方法
JP5395841B2 (ja) * 2011-04-08 2014-01-22 美津濃株式会社 シューズのアッパー構造
US9312155B2 (en) 2011-06-06 2016-04-12 Asm Japan K.K. High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules
US10854498B2 (en) 2011-07-15 2020-12-01 Asm Ip Holding B.V. Wafer-supporting device and method for producing same
US20130023129A1 (en) 2011-07-20 2013-01-24 Asm America, Inc. Pressure transmitter for a semiconductor processing environment
US9017481B1 (en) 2011-10-28 2015-04-28 Asm America, Inc. Process feed management for semiconductor substrate processing
TW202203356A (zh) * 2012-02-10 2022-01-16 美商布魯克斯自動機械公司 基材處理設備
US9293317B2 (en) * 2012-09-12 2016-03-22 Lam Research Corporation Method and system related to semiconductor processing equipment
US10714315B2 (en) 2012-10-12 2020-07-14 Asm Ip Holdings B.V. Semiconductor reaction chamber showerhead
JP2014093489A (ja) * 2012-11-06 2014-05-19 Tokyo Electron Ltd 基板処理装置
US20160376700A1 (en) 2013-02-01 2016-12-29 Asm Ip Holding B.V. System for treatment of deposition reactor
US20150064911A1 (en) 2013-08-27 2015-03-05 Tokyo Electron Limited Substrate processing method, substrate processing apparatus and storage medium
CN105706227B (zh) * 2013-11-04 2019-11-26 应用材料公司 具有增加的侧面数量的传送腔室、半导体装置制造处理工具和处理方法
US10683571B2 (en) 2014-02-25 2020-06-16 Asm Ip Holding B.V. Gas supply manifold and method of supplying gases to chamber using same
US10167557B2 (en) 2014-03-18 2019-01-01 Asm Ip Holding B.V. Gas distribution system, reactor including the system, and methods of using the same
US11015245B2 (en) 2014-03-19 2021-05-25 Asm Ip Holding B.V. Gas-phase reactor and system having exhaust plenum and components thereof
US10858737B2 (en) 2014-07-28 2020-12-08 Asm Ip Holding B.V. Showerhead assembly and components thereof
US9890456B2 (en) 2014-08-21 2018-02-13 Asm Ip Holding B.V. Method and system for in situ formation of gas-phase compounds
US9657845B2 (en) 2014-10-07 2017-05-23 Asm Ip Holding B.V. Variable conductance gas distribution apparatus and method
US10941490B2 (en) 2014-10-07 2021-03-09 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
US9818633B2 (en) * 2014-10-17 2017-11-14 Lam Research Corporation Equipment front end module for transferring wafers and method of transferring wafers
US10276355B2 (en) 2015-03-12 2019-04-30 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
US10458018B2 (en) 2015-06-26 2019-10-29 Asm Ip Holding B.V. Structures including metal carbide material, devices including the structures, and methods of forming same
US10600673B2 (en) 2015-07-07 2020-03-24 Asm Ip Holding B.V. Magnetic susceptor to baseplate seal
US10211308B2 (en) 2015-10-21 2019-02-19 Asm Ip Holding B.V. NbMC layers
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US10529554B2 (en) 2016-02-19 2020-01-07 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
CN105870008B (zh) * 2016-04-18 2018-10-23 武汉华星光电技术有限公司 蚀刻设备及蚀刻方法
US10865475B2 (en) 2016-04-21 2020-12-15 Asm Ip Holding B.V. Deposition of metal borides and silicides
US10190213B2 (en) 2016-04-21 2019-01-29 Asm Ip Holding B.V. Deposition of metal borides
US10032628B2 (en) 2016-05-02 2018-07-24 Asm Ip Holding B.V. Source/drain performance through conformal solid state doping
US10367080B2 (en) 2016-05-02 2019-07-30 Asm Ip Holding B.V. Method of forming a germanium oxynitride film
US11453943B2 (en) 2016-05-25 2022-09-27 Asm Ip Holding B.V. Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
JP2018006534A (ja) * 2016-06-30 2018-01-11 東京エレクトロン株式会社 成膜装置、成膜方法及び記憶媒体
US9859151B1 (en) 2016-07-08 2018-01-02 Asm Ip Holding B.V. Selective film deposition method to form air gaps
US10612137B2 (en) 2016-07-08 2020-04-07 Asm Ip Holdings B.V. Organic reactants for atomic layer deposition
US10714385B2 (en) 2016-07-19 2020-07-14 Asm Ip Holding B.V. Selective deposition of tungsten
US9887082B1 (en) 2016-07-28 2018-02-06 Asm Ip Holding B.V. Method and apparatus for filling a gap
KR102532607B1 (ko) 2016-07-28 2023-05-15 에이에스엠 아이피 홀딩 비.브이. 기판 가공 장치 및 그 동작 방법
US9812320B1 (en) 2016-07-28 2017-11-07 Asm Ip Holding B.V. Method and apparatus for filling a gap
US10643826B2 (en) 2016-10-26 2020-05-05 Asm Ip Holdings B.V. Methods for thermally calibrating reaction chambers
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US10643904B2 (en) 2016-11-01 2020-05-05 Asm Ip Holdings B.V. Methods for forming a semiconductor device and related semiconductor device structures
US10229833B2 (en) 2016-11-01 2019-03-12 Asm Ip Holding B.V. Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10714350B2 (en) 2016-11-01 2020-07-14 ASM IP Holdings, B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10134757B2 (en) 2016-11-07 2018-11-20 Asm Ip Holding B.V. Method of processing a substrate and a device manufactured by using the method
KR102546317B1 (ko) 2016-11-15 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기체 공급 유닛 및 이를 포함하는 기판 처리 장치
KR20180068582A (ko) 2016-12-14 2018-06-22 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
KR20180070971A (ko) 2016-12-19 2018-06-27 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US10269558B2 (en) 2016-12-22 2019-04-23 Asm Ip Holding B.V. Method of forming a structure on a substrate
US10867788B2 (en) 2016-12-28 2020-12-15 Asm Ip Holding B.V. Method of forming a structure on a substrate
US11390950B2 (en) 2017-01-10 2022-07-19 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process
US10655221B2 (en) 2017-02-09 2020-05-19 Asm Ip Holding B.V. Method for depositing oxide film by thermal ALD and PEALD
US10468261B2 (en) 2017-02-15 2019-11-05 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US10529563B2 (en) 2017-03-29 2020-01-07 Asm Ip Holdings B.V. Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
USD876504S1 (en) 2017-04-03 2020-02-25 Asm Ip Holding B.V. Exhaust flow control ring for semiconductor deposition apparatus
KR102457289B1 (ko) 2017-04-25 2022-10-21 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법 및 반도체 장치의 제조 방법
US10892156B2 (en) 2017-05-08 2021-01-12 Asm Ip Holding B.V. Methods for forming a silicon nitride film on a substrate and related semiconductor device structures
US10770286B2 (en) 2017-05-08 2020-09-08 Asm Ip Holdings B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
US10685834B2 (en) 2017-07-05 2020-06-16 Asm Ip Holdings B.V. Methods for forming a silicon germanium tin layer and related semiconductor device structures
KR20190009245A (ko) 2017-07-18 2019-01-28 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물
US11018002B2 (en) 2017-07-19 2021-05-25 Asm Ip Holding B.V. Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
US10541333B2 (en) 2017-07-19 2020-01-21 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11374112B2 (en) 2017-07-19 2022-06-28 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US10590535B2 (en) 2017-07-26 2020-03-17 Asm Ip Holdings B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US10770336B2 (en) 2017-08-08 2020-09-08 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US10692741B2 (en) 2017-08-08 2020-06-23 Asm Ip Holdings B.V. Radiation shield
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US10249524B2 (en) 2017-08-09 2019-04-02 Asm Ip Holding B.V. Cassette holder assembly for a substrate cassette and holding member for use in such assembly
US11139191B2 (en) 2017-08-09 2021-10-05 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
USD900036S1 (en) 2017-08-24 2020-10-27 Asm Ip Holding B.V. Heater electrical connector and adapter
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
KR102491945B1 (ko) 2017-08-30 2023-01-26 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11056344B2 (en) 2017-08-30 2021-07-06 Asm Ip Holding B.V. Layer forming method
KR102630301B1 (ko) 2017-09-21 2024-01-29 에이에스엠 아이피 홀딩 비.브이. 침투성 재료의 순차 침투 합성 방법 처리 및 이를 이용하여 형성된 구조물 및 장치
US10844484B2 (en) 2017-09-22 2020-11-24 Asm Ip Holding B.V. Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US10658205B2 (en) 2017-09-28 2020-05-19 Asm Ip Holdings B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US10403504B2 (en) 2017-10-05 2019-09-03 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US10319588B2 (en) 2017-10-10 2019-06-11 Asm Ip Holding B.V. Method for depositing a metal chalcogenide on a substrate by cyclical deposition
US10923344B2 (en) 2017-10-30 2021-02-16 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures
KR102443047B1 (ko) 2017-11-16 2022-09-14 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 방법 및 그에 의해 제조된 장치
US10910262B2 (en) 2017-11-16 2021-02-02 Asm Ip Holding B.V. Method of selectively depositing a capping layer structure on a semiconductor device structure
US11022879B2 (en) 2017-11-24 2021-06-01 Asm Ip Holding B.V. Method of forming an enhanced unexposed photoresist layer
KR102597978B1 (ko) 2017-11-27 2023-11-06 에이에스엠 아이피 홀딩 비.브이. 배치 퍼니스와 함께 사용하기 위한 웨이퍼 카세트를 보관하기 위한 보관 장치
CN111344522B (zh) 2017-11-27 2022-04-12 阿斯莫Ip控股公司 包括洁净迷你环境的装置
US10872771B2 (en) 2018-01-16 2020-12-22 Asm Ip Holding B. V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
TW202325889A (zh) 2018-01-19 2023-07-01 荷蘭商Ａｓｍ 智慧財產控股公司 沈積方法
CN111630203A (zh) 2018-01-19 2020-09-04 Asm Ip私人控股有限公司 通过等离子体辅助沉积来沉积间隙填充层的方法
USD903477S1 (en) 2018-01-24 2020-12-01 Asm Ip Holdings B.V. Metal clamp
US11018047B2 (en) 2018-01-25 2021-05-25 Asm Ip Holding B.V. Hybrid lift pin
USD880437S1 (en) 2018-02-01 2020-04-07 Asm Ip Holding B.V. Gas supply plate for semiconductor manufacturing apparatus
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
EP3737779A1 (en) 2018-02-14 2020-11-18 ASM IP Holding B.V. A method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US10896820B2 (en) 2018-02-14 2021-01-19 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US10731249B2 (en) 2018-02-15 2020-08-04 Asm Ip Holding B.V. Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus
KR102636427B1 (ko) 2018-02-20 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 장치
US10658181B2 (en) 2018-02-20 2020-05-19 Asm Ip Holding B.V. Method of spacer-defined direct patterning in semiconductor fabrication
US10975470B2 (en) 2018-02-23 2021-04-13 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
US11629406B2 (en) 2018-03-09 2023-04-18 Asm Ip Holding B.V. Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
US11114283B2 (en) 2018-03-16 2021-09-07 Asm Ip Holding B.V. Reactor, system including the reactor, and methods of manufacturing and using same
KR102646467B1 (ko) 2018-03-27 2024-03-11 에이에스엠 아이피 홀딩 비.브이. 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조
US11230766B2 (en) 2018-03-29 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
US11088002B2 (en) 2018-03-29 2021-08-10 Asm Ip Holding B.V. Substrate rack and a substrate processing system and method
KR102501472B1 (ko) 2018-03-30 2023-02-20 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
TW202344708A (zh) 2018-05-08 2023-11-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 藉由循環沉積製程於基板上沉積氧化物膜之方法及相關裝置結構
TWI816783B (zh) 2018-05-11 2023-10-01 荷蘭商Ａｓｍ 智慧財產控股公司 用於基板上形成摻雜金屬碳化物薄膜之方法及相關半導體元件結構
KR102596988B1 (ko) 2018-05-28 2023-10-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 그에 의해 제조된 장치
US11270899B2 (en) 2018-06-04 2022-03-08 Asm Ip Holding B.V. Wafer handling chamber with moisture reduction
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
US11286562B2 (en) 2018-06-08 2022-03-29 Asm Ip Holding B.V. Gas-phase chemical reactor and method of using same
KR102568797B1 (ko) 2018-06-21 2023-08-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 시스템
US10797133B2 (en) 2018-06-21 2020-10-06 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
WO2020003000A1 (en) 2018-06-27 2020-01-02 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US11492703B2 (en) 2018-06-27 2022-11-08 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US10612136B2 (en) 2018-06-29 2020-04-07 ASM IP Holding, B.V. Temperature-controlled flange and reactor system including same
KR20200002519A (ko) 2018-06-29 2020-01-08 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법 및 반도체 장치의 제조 방법
US10388513B1 (en) 2018-07-03 2019-08-20 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10755922B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10767789B2 (en) 2018-07-16 2020-09-08 Asm Ip Holding B.V. Diaphragm valves, valve components, and methods for forming valve components
US11053591B2 (en) 2018-08-06 2021-07-06 Asm Ip Holding B.V. Multi-port gas injection system and reactor system including same
US10883175B2 (en) 2018-08-09 2021-01-05 Asm Ip Holding B.V. Vertical furnace for processing substrates and a liner for use therein
US10829852B2 (en) 2018-08-16 2020-11-10 Asm Ip Holding B.V. Gas distribution device for a wafer processing apparatus
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
KR20200030162A (ko) 2018-09-11 2020-03-20 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법
US11024523B2 (en) 2018-09-11 2021-06-01 Asm Ip Holding B.V. Substrate processing apparatus and method
US11049751B2 (en) 2018-09-14 2021-06-29 Asm Ip Holding B.V. Cassette supply system to store and handle cassettes and processing apparatus equipped therewith
CN110970344A (zh) 2018-10-01 2020-04-07 Asm Ip控股有限公司 衬底保持设备、包含所述设备的系统及其使用方法
US11232963B2 (en) 2018-10-03 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102592699B1 (ko) 2018-10-08 2023-10-23 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치
US10847365B2 (en) 2018-10-11 2020-11-24 Asm Ip Holding B.V. Method of forming conformal silicon carbide film by cyclic CVD
US10811256B2 (en) 2018-10-16 2020-10-20 Asm Ip Holding B.V. Method for etching a carbon-containing feature
KR102605121B1 (ko) 2018-10-19 2023-11-23 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
KR102546322B1 (ko) 2018-10-19 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
USD948463S1 (en) 2018-10-24 2022-04-12 Asm Ip Holding B.V. Susceptor for semiconductor substrate supporting apparatus
US11087997B2 (en) 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
KR20200051105A (ko) 2018-11-02 2020-05-13 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 기판 처리 장치
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US11031242B2 (en) 2018-11-07 2021-06-08 Asm Ip Holding B.V. Methods for depositing a boron doped silicon germanium film
US10847366B2 (en) 2018-11-16 2020-11-24 Asm Ip Holding B.V. Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US10818758B2 (en) 2018-11-16 2020-10-27 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US10559458B1 (en) 2018-11-26 2020-02-11 Asm Ip Holding B.V. Method of forming oxynitride film
US11217444B2 (en) 2018-11-30 2022-01-04 Asm Ip Holding B.V. Method for forming an ultraviolet radiation responsive metal oxide-containing film
KR102636428B1 (ko) 2018-12-04 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치를 세정하는 방법
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
JP2020096183A (ja) 2018-12-14 2020-06-18 エーエスエム・アイピー・ホールディング・ベー・フェー 窒化ガリウムの選択的堆積を用いてデバイス構造体を形成する方法及びそのためのシステム
TWI819180B (zh) 2019-01-17 2023-10-21 荷蘭商Ａｓｍ 智慧財產控股公司 藉由循環沈積製程於基板上形成含過渡金屬膜之方法
KR20200091543A (ko) 2019-01-22 2020-07-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
CN111524788B (zh) 2019-02-01 2023-11-24 Asm Ip私人控股有限公司 氧化硅的拓扑选择性膜形成的方法
TW202044325A (zh) 2019-02-20 2020-12-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 填充一基板之一表面內所形成的一凹槽的方法、根據其所形成之半導體結構、及半導體處理設備
KR102626263B1 (ko) 2019-02-20 2024-01-16 에이에스엠 아이피 홀딩 비.브이. 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치
KR20200102357A (ko) 2019-02-20 2020-08-31 에이에스엠 아이피 홀딩 비.브이. 3-d nand 응용의 플러그 충진체 증착용 장치 및 방법
TW202104632A (zh) 2019-02-20 2021-02-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用來填充形成於基材表面內之凹部的循環沉積方法及設備
TW202100794A (zh) 2019-02-22 2021-01-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基材處理設備及處理基材之方法
KR20200108242A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체
KR20200108248A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. SiOCN 층을 포함한 구조체 및 이의 형성 방법
KR20200108243A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. SiOC 층을 포함한 구조체 및 이의 형성 방법
JP2020167398A (ja) 2019-03-28 2020-10-08 エーエスエム・アイピー・ホールディング・ベー・フェー ドアオープナーおよびドアオープナーが提供される基材処理装置
KR20200116855A (ko) 2019-04-01 2020-10-13 에이에스엠 아이피 홀딩 비.브이. 반도체 소자를 제조하는 방법
KR20200123380A (ko) 2019-04-19 2020-10-29 에이에스엠 아이피 홀딩 비.브이. 층 형성 방법 및 장치
KR20200125453A (ko) 2019-04-24 2020-11-04 에이에스엠 아이피 홀딩 비.브이. 기상 반응기 시스템 및 이를 사용하는 방법
KR20200130118A (ko) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. 비정질 탄소 중합체 막을 개질하는 방법
KR20200130121A (ko) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. 딥 튜브가 있는 화학물질 공급원 용기
KR20200130652A (ko) 2019-05-10 2020-11-19 에이에스엠 아이피 홀딩 비.브이. 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조
JP2020188255A (ja) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー．ブイ． ウェハボートハンドリング装置、縦型バッチ炉および方法
USD947913S1 (en) 2019-05-17 2022-04-05 Asm Ip Holding B.V. Susceptor shaft
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
USD935572S1 (en) 2019-05-24 2021-11-09 Asm Ip Holding B.V. Gas channel plate
USD922229S1 (en) 2019-06-05 2021-06-15 Asm Ip Holding B.V. Device for controlling a temperature of a gas supply unit
KR20200141003A (ko) 2019-06-06 2020-12-17 에이에스엠 아이피 홀딩 비.브이. 가스 감지기를 포함하는 기상 반응기 시스템
KR20200143254A (ko) 2019-06-11 2020-12-23 에이에스엠 아이피 홀딩 비.브이. 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조
USD944946S1 (en) 2019-06-14 2022-03-01 Asm Ip Holding B.V. Shower plate
USD931978S1 (en) 2019-06-27 2021-09-28 Asm Ip Holding B.V. Showerhead vacuum transport
KR20210005515A (ko) 2019-07-03 2021-01-14 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법
JP2021015791A (ja) 2019-07-09 2021-02-12 エーエスエム アイピー ホールディング ビー．ブイ． 同軸導波管を用いたプラズマ装置、基板処理方法
CN112216623B (zh) * 2019-07-10 2022-12-23 长鑫存储技术有限公司 刻蚀机台及其控制方法
CN112216646A (zh) 2019-07-10 2021-01-12 Asm Ip私人控股有限公司 基板支撑组件及包括其的基板处理装置
KR20210010307A (ko) 2019-07-16 2021-01-27 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR20210010816A (ko) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 라디칼 보조 점화 플라즈마 시스템 및 방법
KR20210010820A (ko) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 실리콘 게르마늄 구조를 형성하는 방법
US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
CN112242296A (zh) 2019-07-19 2021-01-19 Asm Ip私人控股有限公司 形成拓扑受控的无定形碳聚合物膜的方法
CN112309843A (zh) 2019-07-29 2021-02-02 Asm Ip私人控股有限公司 实现高掺杂剂掺入的选择性沉积方法
CN112309900A (zh) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 基板处理设备
CN112309899A (zh) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 基板处理设备
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11227782B2 (en) 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
KR20210018759A (ko) 2019-08-05 2021-02-18 에이에스엠 아이피 홀딩 비.브이. 화학물질 공급원 용기를 위한 액체 레벨 센서
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
JP2021031769A (ja) 2019-08-21 2021-03-01 エーエスエム アイピー ホールディング ビー．ブイ． 成膜原料混合ガス生成装置及び成膜装置
KR20210024423A (ko) 2019-08-22 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 홀을 구비한 구조체를 형성하기 위한 방법
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
USD949319S1 (en) 2019-08-22 2022-04-19 Asm Ip Holding B.V. Exhaust duct
USD940837S1 (en) 2019-08-22 2022-01-11 Asm Ip Holding B.V. Electrode
USD930782S1 (en) 2019-08-22 2021-09-14 Asm Ip Holding B.V. Gas distributor
US11286558B2 (en) 2019-08-23 2022-03-29 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
KR20210024420A (ko) 2019-08-23 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법
KR20210029090A (ko) 2019-09-04 2021-03-15 에이에스엠 아이피 홀딩 비.브이. 희생 캡핑 층을 이용한 선택적 증착 방법
KR20210029663A (ko) 2019-09-05 2021-03-16 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
CN112593212B (zh) 2019-10-02 2023-12-22 Asm Ip私人控股有限公司 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法
TW202129060A (zh) 2019-10-08 2021-08-01 荷蘭商Ａｓｍ Ｉｐ控股公司 基板處理裝置、及基板處理方法
KR20210043460A (ko) 2019-10-10 2021-04-21 에이에스엠 아이피 홀딩 비.브이. 포토레지스트 하부층을 형성하기 위한 방법 및 이를 포함한 구조체
KR20210045930A (ko) 2019-10-16 2021-04-27 에이에스엠 아이피 홀딩 비.브이. 실리콘 산화물의 토폴로지-선택적 막의 형성 방법
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
KR20210047808A (ko) 2019-10-21 2021-04-30 에이에스엠 아이피 홀딩 비.브이. 막을 선택적으로 에칭하기 위한 장치 및 방법
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
KR20210054983A (ko) 2019-11-05 2021-05-14 에이에스엠 아이피 홀딩 비.브이. 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템
US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
KR20210062561A (ko) 2019-11-20 2021-05-31 에이에스엠 아이피 홀딩 비.브이. 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템
KR20210065848A (ko) 2019-11-26 2021-06-04 에이에스엠 아이피 홀딩 비.브이. 제1 유전체 표면과 제2 금속성 표면을 포함한 기판 상에 타겟 막을 선택적으로 형성하기 위한 방법
CN112951697A (zh) 2019-11-26 2021-06-11 Asm Ip私人控股有限公司 基板处理设备
CN112885693A (zh) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 基板处理设备
CN112885692A (zh) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 基板处理设备
JP2021090042A (ja) 2019-12-02 2021-06-10 エーエスエム アイピー ホールディング ビー．ブイ． 基板処理装置、基板処理方法
KR20210070898A (ko) 2019-12-04 2021-06-15 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
TW202125596A (zh) 2019-12-17 2021-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成氮化釩層之方法以及包括該氮化釩層之結構
KR20210080214A (ko) 2019-12-19 2021-06-30 에이에스엠 아이피 홀딩 비.브이. 기판 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조
JP2021109175A (ja) 2020-01-06 2021-08-02 エーエスエム・アイピー・ホールディング・ベー・フェー ガス供給アセンブリ、その構成要素、およびこれを含む反応器システム
KR20210095050A (ko) 2020-01-20 2021-07-30 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법 및 박막 표면 개질 방법
TW202130846A (zh) 2020-02-03 2021-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成包括釩或銦層的結構之方法
TW202146882A (zh) 2020-02-04 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 驗證一物品之方法、用於驗證一物品之設備、及用於驗證一反應室之系統
US11776846B2 (en) 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
US11781243B2 (en) 2020-02-17 2023-10-10 Asm Ip Holding B.V. Method for depositing low temperature phosphorous-doped silicon
KR20210116240A (ko) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. 조절성 접합부를 갖는 기판 핸들링 장치
US11876356B2 (en) 2020-03-11 2024-01-16 Asm Ip Holding B.V. Lockout tagout assembly and system and method of using same
KR20210117157A (ko) 2020-03-12 2021-09-28 에이에스엠 아이피 홀딩 비.브이. 타겟 토폴로지 프로파일을 갖는 층 구조를 제조하기 위한 방법
KR20210124042A (ko) 2020-04-02 2021-10-14 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법
TW202146689A (zh) 2020-04-03 2021-12-16 荷蘭商Ａｓｍ Ｉｐ控股公司 阻障層形成方法及半導體裝置的製造方法
TW202145344A (zh) 2020-04-08 2021-12-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於選擇性蝕刻氧化矽膜之設備及方法
US11821078B2 (en) 2020-04-15 2023-11-21 Asm Ip Holding B.V. Method for forming precoat film and method for forming silicon-containing film
KR20210132605A (ko) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. 냉각 가스 공급부를 포함한 수직형 배치 퍼니스 어셈블리
US11898243B2 (en) 2020-04-24 2024-02-13 Asm Ip Holding B.V. Method of forming vanadium nitride-containing layer
KR20210132600A (ko) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템
KR20210134226A (ko) 2020-04-29 2021-11-09 에이에스엠 아이피 홀딩 비.브이. 고체 소스 전구체 용기
KR20210134869A (ko) 2020-05-01 2021-11-11 에이에스엠 아이피 홀딩 비.브이. Foup 핸들러를 이용한 foup의 빠른 교환
KR20210141379A (ko) 2020-05-13 2021-11-23 에이에스엠 아이피 홀딩 비.브이. 반응기 시스템용 레이저 정렬 고정구
KR20210143653A (ko) 2020-05-19 2021-11-29 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR20210145078A (ko) 2020-05-21 2021-12-01 에이에스엠 아이피 홀딩 비.브이. 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법
TW202201602A (zh) 2020-05-29 2022-01-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
TW202218133A (zh) 2020-06-24 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成含矽層之方法
TW202217953A (zh) 2020-06-30 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
TW202219628A (zh) 2020-07-17 2022-05-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於光微影之結構與方法
TW202204662A (zh) 2020-07-20 2022-02-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於沉積鉬層之方法及系統
KR20220027026A (ko) 2020-08-26 2022-03-07 에이에스엠 아이피 홀딩 비.브이. 금속 실리콘 산화물 및 금속 실리콘 산질화물 층을 형성하기 위한 방법 및 시스템
USD990534S1 (en) 2020-09-11 2023-06-27 Asm Ip Holding B.V. Weighted lift pin
KR102571741B1 (ko) * 2020-09-18 2023-08-25 세메스 주식회사 기판 처리 장치 및 이를 구비하는 기판 처리 시스템
USD1012873S1 (en) 2020-09-24 2024-01-30 Asm Ip Holding B.V. Electrode for semiconductor processing apparatus
TW202229613A (zh) 2020-10-14 2022-08-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 於階梯式結構上沉積材料的方法
KR20220053482A (ko) 2020-10-22 2022-04-29 에이에스엠 아이피 홀딩 비.브이. 바나듐 금속을 증착하는 방법, 구조체, 소자 및 증착 어셈블리
TW202223136A (zh) 2020-10-28 2022-06-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於在基板上形成層之方法、及半導體處理系統
TW202235675A (zh) 2020-11-30 2022-09-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 注入器、及基板處理設備
US11946137B2 (en) 2020-12-16 2024-04-02 Asm Ip Holding B.V. Runout and wobble measurement fixtures
TW202231903A (zh) 2020-12-22 2022-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 過渡金屬沉積方法、過渡金屬層、用於沉積過渡金屬於基板上的沉積總成
USD980814S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas distributor for substrate processing apparatus
USD1023959S1 (en) 2021-05-11 2024-04-23 Asm Ip Holding B.V. Electrode for substrate processing apparatus
USD980813S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas flow control plate for substrate processing apparatus
USD981973S1 (en) 2021-05-11 2023-03-28 Asm Ip Holding B.V. Reactor wall for substrate processing apparatus
US11598579B2 (en) 2021-07-01 2023-03-07 King Yuan Dar Metal Enterprise Co., Ltd. Continuous working system
USD990441S1 (en) 2021-09-07 2023-06-27 Asm Ip Holding B.V. Gas flow control plate
US20230317478A1 (en) * 2022-03-11 2023-10-05 Applied Materials, Inc. Modular multi-chamber processing tool having link chamber for ultra high vaccum processes
CN114777427B (zh) * 2022-05-10 2023-11-17 星恒电源股份有限公司 一种方形叠片锂离子电池电芯的干燥方法
KR102510315B1 (ko) 2022-12-27 2023-03-15 주식회사 우원기술 로드락 장치 및 이를 이용한 반도체 제조 시스템

Family Cites Families (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5259881A (en) * 1991-05-17 1993-11-09 Materials Research Corporation Wafer processing cluster tool batch preheating and degassing apparatus
US5292393A (en) 1986-12-19 1994-03-08 Applied Materials, Inc. Multichamber integrated process system
JPS63157870A (ja) * 1986-12-19 1988-06-30 Anelva Corp 基板処理装置
US4951601A (en) * 1986-12-19 1990-08-28 Applied Materials, Inc. Multi-chamber integrated process system
JPS63252439A (ja) * 1986-12-19 1988-10-19 アプライド　マテリアルズインコーポレーテッド 多チャンバの統合処理システム
JPH03274746A (ja) * 1990-03-24 1991-12-05 Sony Corp マルチチャンバ装置
JP2644912B2 (ja) * 1990-08-29 1997-08-25 株式会社日立製作所 真空処理装置及びその運転方法
US5273244A (en) * 1990-10-31 1993-12-28 Tokyo Electron Sagami Limited Plate-like member conveying apparatus
US5685684A (en) * 1990-11-26 1997-11-11 Hitachi, Ltd. Vacuum processing system
US5286296A (en) * 1991-01-10 1994-02-15 Sony Corporation Multi-chamber wafer process equipment having plural, physically communicating transfer means
JPH081923B2 (ja) 1991-06-24 1996-01-10 ティーディーケイ株式会社 クリーン搬送方法及び装置
JP3238432B2 (ja) * 1991-08-27 2001-12-17 東芝機械株式会社 マルチチャンバ型枚葉処理装置
KR100230697B1 (ko) * 1992-02-18 1999-11-15 이노우에 쥰이치 감압 처리 장치
JP3030160B2 (ja) * 1992-04-28 2000-04-10 東京エレクトロン株式会社 真空処理装置
JPH06136669A (ja) 1992-10-27 1994-05-17 Yuko Teramura ウールの植物染色法
JP3514391B2 (ja) * 1992-11-20 2004-03-31 東京エレクトロン株式会社 気密室、及び、気密室の圧力制御方法
JPH06188229A (ja) * 1992-12-16 1994-07-08 Tokyo Electron Yamanashi Kk エッチングの後処理方法
US5431529A (en) * 1992-12-28 1995-07-11 Brooks Automation, Inc. Articulated arm transfer device
US5527390A (en) * 1993-03-19 1996-06-18 Tokyo Electron Kabushiki Treatment system including a plurality of treatment apparatus
TW276353B (zh) * 1993-07-15 1996-05-21 Hitachi Seisakusyo Kk
US5565034A (en) * 1993-10-29 1996-10-15 Tokyo Electron Limited Apparatus for processing substrates having a film formed on a surface of the substrate
US5518542A (en) * 1993-11-05 1996-05-21 Tokyo Electron Limited Double-sided substrate cleaning apparatus
JPH07211763A (ja) 1994-01-18 1995-08-11 Hitachi Ltd マルチチャンバ装置およびその制御方法
JPH07297194A (ja) * 1994-04-25 1995-11-10 Sony Corp マルチチャンバー装置及び半導体装置の製造方法
US6712577B2 (en) * 1994-04-28 2004-03-30 Semitool, Inc. Automated semiconductor processing system
JPH081923A (ja) 1994-06-21 1996-01-09 Sanyo Electric Co Ltd 立体静止画像のプリント方法
KR0129582B1 (ko) * 1994-06-23 1998-04-06 김주용 다중 기판 전달 장치
TW295677B (zh) 1994-08-19 1997-01-11 Tokyo Electron Co Ltd
TW309503B (zh) * 1995-06-27 1997-07-01 Tokyo Electron Co Ltd
JPH0936198A (ja) * 1995-07-19 1997-02-07 Hitachi Ltd 真空処理装置およびそれを用いた半導体製造ライン
KR100310249B1 (ko) * 1995-08-05 2001-12-17 엔도 마코토 기판처리장치
US5788868A (en) * 1995-09-04 1998-08-04 Dainippon Screen Mfg. Co., Ltd. Substrate transfer method and interface apparatus
JP3218425B2 (ja) * 1996-03-25 2001-10-15 東京エレクトロン株式会社 処理方法及び処理装置
US5765983A (en) * 1996-05-30 1998-06-16 Brooks Automation, Inc. Robot handling apparatus
TW344847B (en) * 1996-08-29 1998-11-11 Tokyo Electron Co Ltd Substrate treatment system, substrate transfer system, and substrate transfer method
JP3947761B2 (ja) * 1996-09-26 2007-07-25 株式会社日立国際電気 基板処理装置、基板搬送機および基板処理方法
KR100234539B1 (ko) * 1996-12-24 1999-12-15 윤종용 반도체장치 제조용 식각 장치
US6174377B1 (en) * 1997-03-03 2001-01-16 Genus, Inc. Processing chamber for atomic layer deposition processes
JPH1145929A (ja) 1997-05-30 1999-02-16 Sharp Corp プラズマ処理装置
KR19990025706A (ko) 1997-09-13 1999-04-06 윤종용 마이크로카드형 패키지 및 그 제조방법
US6235634B1 (en) * 1997-10-08 2001-05-22 Applied Komatsu Technology, Inc. Modular substrate processing system
US6722834B1 (en) * 1997-10-08 2004-04-20 Applied Materials, Inc. Robot blade with dual offset wafer supports
US6136211A (en) * 1997-11-12 2000-10-24 Applied Materials, Inc. Self-cleaning etch process
EP2099061A3 (en) * 1997-11-28 2013-06-12 Mattson Technology, Inc. Systems and methods for low contamination, high throughput handling of workpieces for vacuum processing
JPH11312640A (ja) 1998-02-25 1999-11-09 Canon Inc 処理装置および該処理装置を用いたデバイス製造方法
KR100265287B1 (ko) * 1998-04-21 2000-10-02 윤종용 반도체소자 제조용 식각설비의 멀티챔버 시스템
US6358128B1 (en) 1999-03-05 2002-03-19 Ebara Corporation Polishing apparatus
US6606210B1 (en) 1999-04-21 2003-08-12 Seagate Technology Llc Intelligent sector recovery algorithm
US20030045098A1 (en) 2001-08-31 2003-03-06 Applied Materials, Inc. Method and apparatus for processing a wafer
JP4220173B2 (ja) 2002-03-26 2009-02-04 株式会社日立ハイテクノロジーズ 基板の搬送方法
US7959395B2 (en) 2002-07-22 2011-06-14 Brooks Automation, Inc. Substrate processing apparatus
US6939403B2 (en) 2002-11-19 2005-09-06 Blue29, Llc Spatially-arranged chemical processing station
US7934513B2 (en) * 2003-10-08 2011-05-03 Semes Co., Ltd. Facility with multi-storied process chamber for cleaning substrates and method for cleaning substrates using the facility
US20070269297A1 (en) * 2003-11-10 2007-11-22 Meulen Peter V D Semiconductor wafer handling and transport
US20060182535A1 (en) 2004-12-22 2006-08-17 Mike Rice Cartesian robot design
CN101164138B (zh) 2005-04-22 2012-10-17 应用材料公司 笛卡尔机械臂群集工具架构
US7628574B2 (en) 2006-03-28 2009-12-08 Arcus Technology, Inc. Apparatus and method for processing substrates using one or more vacuum transfer chamber units
US8398355B2 (en) 2006-05-26 2013-03-19 Brooks Automation, Inc. Linearly distributed semiconductor workpiece processing tool
US20080166210A1 (en) * 2007-01-05 2008-07-10 Applied Materials, Inc. Supinating cartesian robot blade
US20080206022A1 (en) * 2007-02-27 2008-08-28 Smith John M Mult-axis robot arms in substrate vacuum processing tool
US20090056116A1 (en) * 2007-08-07 2009-03-05 Micro Foundry Inc. Integrated miniature device factory

Also Published As

Publication number Publication date
JP5491579B2 (ja) 2014-05-14
DE19901426A1 (de) 1999-11-04
US20090203211A1 (en) 2009-08-13
JP2012186506A (ja) 2012-09-27
DE19964479B4 (de) 2011-03-31
JP5134575B2 (ja) 2013-01-30
US7776226B2 (en) 2010-08-17
DE19901426B4 (de) 2008-04-03
KR100265287B1 (ko) 2000-10-02
US20030073323A1 (en) 2003-04-17
JP2007036284A (ja) 2007-02-08
US20050236092A1 (en) 2005-10-27
US6930050B2 (en) 2005-08-16
US20090291558A1 (en) 2009-11-26
JPH11307614A (ja) 1999-11-05
KR19990080759A (ko) 1999-11-15
JP2009147368A (ja) 2009-07-02
US6503365B1 (en) 2003-01-07

Similar Documents

Publication Publication Date Title
TW502284B (en) Multichamber system of etching facility for manufacturing semiconductor device
US5613821A (en) Cluster tool batchloader of substrate carrier
US5607276A (en) Batchloader for substrate carrier on load lock
US5664925A (en) Batchloader for load lock
US5609459A (en) Door drive mechanisms for substrate carrier and load lock
USRE43023E1 (en) Dual loading port semiconductor processing equipment
EP0565001B1 (en) Closed container to be used in a clean room
JP4093376B2 (ja) 吸引一体型ｓｍｉｆシステム
KR101015228B1 (ko) 반도체소자 제조를 위한 멀티챔버 시스템 및 그 시스템에서의 기판 처리 방법
US6120229A (en) Substrate carrier as batchloader
US20030152445A1 (en) Semiconductor processing apparatus comprising chamber partitioned into reaction and transfer sections
EP1048057A1 (en) Wafer aligner in center of front end frame of vacuum system
JPH06211306A (ja) 基板保管装置
KR20040072677A (ko) 피 처리체의 반송장치 및 반송장치를 구비한 처리 시스템
JP4256551B2 (ja) 真空処理システム
JPH04190840A (ja) 真空処理装置
KR20180111592A (ko) 기판 처리 장치
JP4306798B2 (ja) 基板キャリアおよびロードロック用ドア駆動装置
JP5926694B2 (ja) 基板中継装置，基板中継方法，基板処理装置
CN108695202B (zh) 处理系统
JP2002158273A (ja) 真空処理装置
JP7458212B2 (ja) 基板搬送システムおよび基板搬送方法
KR100717990B1 (ko) 반도체 자재 처리를 위한 이송 시스템
KR100896472B1 (ko) 반도체소자 제조를 위한 멀티챔버 시스템 및 기판 처리 방법
KR101039231B1 (ko) 기판 제조 장치

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent