TW234771B - - Google Patents
Download PDFInfo
- Publication number
- TW234771B TW234771B TW083100209A TW83100209A TW234771B TW 234771 B TW234771 B TW 234771B TW 083100209 A TW083100209 A TW 083100209A TW 83100209 A TW83100209 A TW 83100209A TW 234771 B TW234771 B TW 234771B
- Authority
- TW
- Taiwan
- Prior art keywords
- gate
- patent application
- film
- anode
- oxide
- Prior art date
Links
- 239000012535 impurity Substances 0.000 claims description 92
- 238000000034 method Methods 0.000 claims description 61
- 239000000463 material Substances 0.000 claims description 26
- 239000004065 semiconductor Substances 0.000 claims description 23
- 238000009413 insulation Methods 0.000 claims description 13
- 238000002048 anodisation reaction Methods 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 230000000694 effects Effects 0.000 claims description 8
- 238000002309 gasification Methods 0.000 claims description 7
- 230000005855 radiation Effects 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 238000007743 anodising Methods 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- 239000011368 organic material Substances 0.000 claims description 2
- 238000007639 printing Methods 0.000 claims description 2
- 210000003625 skull Anatomy 0.000 claims description 2
- 210000003423 ankle Anatomy 0.000 claims 2
- 101001053401 Arabidopsis thaliana Acid beta-fructofuranosidase 3, vacuolar Proteins 0.000 claims 1
- 239000010407 anodic oxide Substances 0.000 claims 1
- 239000011324 bead Substances 0.000 claims 1
- 239000007772 electrode material Substances 0.000 claims 1
- 239000007943 implant Substances 0.000 claims 1
- 238000002347 injection Methods 0.000 claims 1
- 239000007924 injection Substances 0.000 claims 1
- 239000012528 membrane Substances 0.000 claims 1
- 238000012797 qualification Methods 0.000 claims 1
- 239000013589 supplement Substances 0.000 claims 1
- 229940098465 tincture Drugs 0.000 claims 1
- 239000010408 film Substances 0.000 description 83
- 239000000758 substrate Substances 0.000 description 42
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 28
- 229910052814 silicon oxide Inorganic materials 0.000 description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 23
- 229910052710 silicon Inorganic materials 0.000 description 23
- 239000010703 silicon Substances 0.000 description 23
- 238000011049 filling Methods 0.000 description 16
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 15
- 230000008569 process Effects 0.000 description 15
- 239000010409 thin film Substances 0.000 description 14
- 229910021417 amorphous silicon Inorganic materials 0.000 description 13
- 229910052782 aluminium Inorganic materials 0.000 description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 12
- 239000013078 crystal Substances 0.000 description 9
- 239000007789 gas Substances 0.000 description 9
- 239000000243 solution Substances 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- 229920000642 polymer Polymers 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 239000010410 layer Substances 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 238000002513 implantation Methods 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 230000001133 acceleration Effects 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 description 4
- -1 nitrogen nitride metals Chemical class 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- HGVHMIAKUYLQLL-UHFFFAOYSA-N ethene;propane-1,2,3-triol Chemical compound C=C.OCC(O)CO HGVHMIAKUYLQLL-UHFFFAOYSA-N 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000010348 incorporation Methods 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical group P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052770 Uranium Inorganic materials 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000001427 coherent effect Effects 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000001066 destructive effect Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 210000001624 hip Anatomy 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000006386 neutralization reaction Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 235000015067 sauces Nutrition 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 239000011975 tartaric acid Substances 0.000 description 2
- 235000002906 tartaric acid Nutrition 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- IGUZJYCAXLYZEE-UHFFFAOYSA-N 3,4,5-trihydroxypentan-2-one Chemical compound CC(=O)C(O)C(O)CO IGUZJYCAXLYZEE-UHFFFAOYSA-N 0.000 description 1
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical group [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229910021536 Zeolite Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000010405 anode material Substances 0.000 description 1
- 230000002660 anti-spreading effect Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 210000004556 brain Anatomy 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 230000005465 channeling Effects 0.000 description 1
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000002079 cooperative effect Effects 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001815 facial effect Effects 0.000 description 1
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- XKGUKYPCHPHAJL-UHFFFAOYSA-N methanetetracarbonitrile Chemical compound N#CC(C#N)(C#N)C#N XKGUKYPCHPHAJL-UHFFFAOYSA-N 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000003471 mutagenic agent Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- JQMVGTOAKFLMOU-UHFFFAOYSA-N pentaoxane Chemical compound C1OOOOO1 JQMVGTOAKFLMOU-UHFFFAOYSA-N 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 1
- 239000010938 white gold Substances 0.000 description 1
- 229910000832 white gold Inorganic materials 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 239000008947 yigong Substances 0.000 description 1
- 239000010457 zeolite Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
- H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
- H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
- H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/021—Manufacture or treatment of multiple TFTs
- H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
- H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
- H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/441—Interconnections, e.g. scanning lines
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/149—Source or drain regions of field-effect devices
- H10D62/151—Source or drain regions of field-effect devices of IGFETs
Landscapes
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2328793 | 1993-01-18 | ||
| JP32311793A JP3437863B2 (ja) | 1993-01-18 | 1993-11-29 | Ｍｉｓ型半導体装置の作製方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW234771B true TW234771B (cg-RX-API-DMAC7.html) | 1994-11-21 |
Family
ID=26360618
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW083100209A TW234771B (cg-RX-API-DMAC7.html) | 1993-01-18 | 1994-01-12 |
Country Status (5)
| Country | Link |
|---|---|
| US (5) | US5627084A (cg-RX-API-DMAC7.html) |
| JP (1) | JP3437863B2 (cg-RX-API-DMAC7.html) |
| KR (1) | KR0145458B1 (cg-RX-API-DMAC7.html) |
| CN (4) | CN1058108C (cg-RX-API-DMAC7.html) |
| TW (1) | TW234771B (cg-RX-API-DMAC7.html) |
Families Citing this family (95)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3437863B2 (ja) | 1993-01-18 | 2003-08-18 | 株式会社半導体エネルギー研究所 | Ｍｉｓ型半導体装置の作製方法 |
| TW297142B (cg-RX-API-DMAC7.html) * | 1993-09-20 | 1997-02-01 | Handotai Energy Kenkyusho Kk | |
| US6777763B1 (en) * | 1993-10-01 | 2004-08-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for fabricating the same |
| US5719065A (en) * | 1993-10-01 | 1998-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device with removable spacers |
| JPH07335904A (ja) | 1994-06-14 | 1995-12-22 | Semiconductor Energy Lab Co Ltd | 薄膜半導体集積回路 |
| JP3153065B2 (ja) * | 1993-12-27 | 2001-04-03 | 株式会社半導体エネルギー研究所 | 半導体集積回路の電極の作製方法 |
| US5616935A (en) * | 1994-02-08 | 1997-04-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor integrated circuit having N-channel and P-channel transistors |
| US6723590B1 (en) | 1994-03-09 | 2004-04-20 | Semiconductor Energy Laboratory Co., Ltd. | Method for laser-processing semiconductor device |
| KR100321541B1 (ko) * | 1994-03-09 | 2002-06-20 | 야마자끼 순페이 | 능동 매트릭스 디스플레이 장치의 작동 방법 |
| US6433361B1 (en) | 1994-04-29 | 2002-08-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor integrated circuit and method for forming the same |
| JP3312083B2 (ja) | 1994-06-13 | 2002-08-05 | 株式会社半導体エネルギー研究所 | 表示装置 |
| US6798394B1 (en) * | 1994-10-07 | 2004-09-28 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix panel |
| JP3173760B2 (ja) | 1994-11-11 | 2001-06-04 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP3469337B2 (ja) * | 1994-12-16 | 2003-11-25 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US5814529A (en) | 1995-01-17 | 1998-09-29 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing a semiconductor integrated circuit including a thin film transistor and a capacitor |
| JP3778456B2 (ja) | 1995-02-21 | 2006-05-24 | 株式会社半導体エネルギー研究所 | 絶縁ゲイト型薄膜半導体装置の作製方法 |
| US6420725B1 (en) | 1995-06-07 | 2002-07-16 | Micron Technology, Inc. | Method and apparatus for forming an integrated circuit electrode having a reduced contact area |
| US5771110A (en) | 1995-07-03 | 1998-06-23 | Sanyo Electric Co., Ltd. | Thin film transistor device, display device and method of fabricating the same |
| US6790714B2 (en) | 1995-07-03 | 2004-09-14 | Sanyo Electric Co., Ltd. | Semiconductor device, display device and method of fabricating the same |
| TW371796B (en) * | 1995-09-08 | 1999-10-11 | Semiconductor Energy Lab Co Ltd | Method and apparatus for manufacturing a semiconductor device |
| US6225174B1 (en) * | 1996-06-13 | 2001-05-01 | Micron Technology, Inc. | Method for forming a spacer using photosensitive material |
| TW324862B (en) * | 1996-07-03 | 1998-01-11 | Hitachi Ltd | Liquid display apparatus |
| AU3597997A (en) | 1996-07-16 | 1998-02-09 | Ewd L.L.C. | Circuit protection arrangements |
| JP3856889B2 (ja) * | 1997-02-06 | 2006-12-13 | 株式会社半導体エネルギー研究所 | 反射型表示装置および電子デバイス |
| KR100269520B1 (ko) | 1997-07-29 | 2000-10-16 | 구본준 | 박막트랜지스터, 액정표시장치와 그 제조방법 |
| EP0971397B1 (en) * | 1997-11-28 | 2003-04-23 | Matsushita Electric Industrial Co., Ltd. | Method and device for activating semiconductor impurities |
| US6349022B1 (en) | 1998-09-18 | 2002-02-19 | Tyco Electronics Corporation | Latching protection circuit |
| JP4436469B2 (ja) * | 1998-09-30 | 2010-03-24 | 三洋電機株式会社 | 半導体装置 |
| US20020008257A1 (en) * | 1998-09-30 | 2002-01-24 | John P. Barnak | Mosfet gate electrodes having performance tuned work functions and methods of making same |
| EP2264771A3 (en) | 1998-12-03 | 2015-04-29 | Semiconductor Energy Laboratory Co., Ltd. | MOS thin film transistor and method of fabricating same |
| US6535535B1 (en) | 1999-02-12 | 2003-03-18 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation method, laser irradiation apparatus, and semiconductor device |
| JP3399432B2 (ja) * | 1999-02-26 | 2003-04-21 | セイコーエプソン株式会社 | 電気光学装置の製造方法及び電気光学装置 |
| TW444257B (en) | 1999-04-12 | 2001-07-01 | Semiconductor Energy Lab | Semiconductor device and method for fabricating the same |
| JP4527070B2 (ja) * | 1999-04-12 | 2010-08-18 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法、並びに電子機器 |
| US6335292B1 (en) * | 1999-04-15 | 2002-01-01 | Micron Technology, Inc. | Method of controlling striations and CD loss in contact oxide etch |
| TW518637B (en) | 1999-04-15 | 2003-01-21 | Semiconductor Energy Lab | Electro-optical device and electronic equipment |
| US6370502B1 (en) * | 1999-05-27 | 2002-04-09 | America Online, Inc. | Method and system for reduction of quantization-induced block-discontinuities and general purpose audio codec |
| US7245018B1 (en) * | 1999-06-22 | 2007-07-17 | Semiconductor Energy Laboratory Co., Ltd. | Wiring material, semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof |
| US6661096B1 (en) * | 1999-06-29 | 2003-12-09 | Semiconductor Energy Laboratory Co., Ltd. | Wiring material semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof |
| US6952020B1 (en) * | 1999-07-06 | 2005-10-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP4666723B2 (ja) | 1999-07-06 | 2011-04-06 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2003508807A (ja) * | 1999-08-31 | 2003-03-04 | イー−インク コーポレイション | 電子的に駆動されるディスプレイ用トランジスタ |
| US6885366B1 (en) | 1999-09-30 | 2005-04-26 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| US6780687B2 (en) * | 2000-01-28 | 2004-08-24 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device having a heat absorbing layer |
| US6872607B2 (en) * | 2000-03-21 | 2005-03-29 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
| TW565939B (en) * | 2000-04-07 | 2003-12-11 | Koninkl Philips Electronics Nv | Electronic device manufacture |
| US7525165B2 (en) * | 2000-04-17 | 2009-04-28 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and manufacturing method thereof |
| US6608449B2 (en) * | 2000-05-08 | 2003-08-19 | Semiconductor Energy Laboratory Co., Ltd. | Luminescent apparatus and method of manufacturing the same |
| TWI224806B (en) * | 2000-05-12 | 2004-12-01 | Semiconductor Energy Lab | Semiconductor device and manufacturing method thereof |
| US6825820B2 (en) * | 2000-08-10 | 2004-11-30 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device |
| US6905920B2 (en) * | 2000-09-04 | 2005-06-14 | Seiko Epson Corporation | Method for fabrication of field-effect transistor to reduce defects at MOS interfaces formed at low temperature |
| US6562671B2 (en) * | 2000-09-22 | 2003-05-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor display device and manufacturing method thereof |
| JP2002202527A (ja) * | 2000-12-28 | 2002-07-19 | Nec Corp | アクティブマトリクス型液晶表示装置 |
| US6770518B2 (en) * | 2001-01-29 | 2004-08-03 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device |
| SG114529A1 (en) * | 2001-02-23 | 2005-09-28 | Semiconductor Energy Lab | Method of manufacturing a semiconductor device |
| US6501135B1 (en) * | 2001-05-04 | 2002-12-31 | Advanced Micro Devices, Inc. | Germanium-on-insulator (GOI) device |
| JP5025057B2 (ja) * | 2001-05-10 | 2012-09-12 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP3918741B2 (ja) * | 2002-03-28 | 2007-05-23 | セイコーエプソン株式会社 | 電気光学装置の製造方法、及び半導体装置の製造方法 |
| JP3989761B2 (ja) * | 2002-04-09 | 2007-10-10 | 株式会社半導体エネルギー研究所 | 半導体表示装置 |
| US7038239B2 (en) | 2002-04-09 | 2006-05-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element and display device using the same |
| KR100968496B1 (ko) * | 2002-04-15 | 2010-07-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시장치 및 그 제조방법 |
| JP3989763B2 (ja) | 2002-04-15 | 2007-10-10 | 株式会社半導体エネルギー研究所 | 半導体表示装置 |
| US7256421B2 (en) | 2002-05-17 | 2007-08-14 | Semiconductor Energy Laboratory, Co., Ltd. | Display device having a structure for preventing the deterioration of a light emitting device |
| US7977390B2 (en) | 2002-10-11 | 2011-07-12 | Lam Research Corporation | Method for plasma etching performance enhancement |
| US7169695B2 (en) * | 2002-10-11 | 2007-01-30 | Lam Research Corporation | Method for forming a dual damascene structure |
| US6833325B2 (en) * | 2002-10-11 | 2004-12-21 | Lam Research Corporation | Method for plasma etching performance enhancement |
| EP1596427A4 (en) | 2003-02-19 | 2009-06-10 | Panasonic Corp | PROCESS FOR INTRODUCING CONTAMINATION |
| US7294580B2 (en) * | 2003-04-09 | 2007-11-13 | Lam Research Corporation | Method for plasma stripping using periodic modulation of gas chemistry and hydrocarbon addition |
| US6916746B1 (en) * | 2003-04-09 | 2005-07-12 | Lam Research Corporation | Method for plasma etching using periodic modulation of gas chemistry |
| JP4589606B2 (ja) * | 2003-06-02 | 2010-12-01 | 住友重機械工業株式会社 | 半導体装置の製造方法 |
| US7262463B2 (en) * | 2003-07-25 | 2007-08-28 | Hewlett-Packard Development Company, L.P. | Transistor including a deposited channel region having a doped portion |
| US7115488B2 (en) * | 2003-08-29 | 2006-10-03 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
| CN100454491C (zh) * | 2003-10-09 | 2009-01-21 | 松下电器产业株式会社 | 制作结的方法以及采用该方法形成的已加工材料 |
| WO2005043617A1 (en) * | 2003-10-31 | 2005-05-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor integrated circuit and design method thereof |
| US20080185667A1 (en) * | 2004-09-17 | 2008-08-07 | Kenichi Yoshino | Thin Film Semiconductor Device and Method for Manufacturing the Same |
| US7192815B2 (en) * | 2004-11-15 | 2007-03-20 | Chunghwa Picture Tubes, Ltd. | Method of manufacturing a thin film transistor |
| RU2306631C2 (ru) * | 2004-11-30 | 2007-09-20 | Федеральное Государственное Унитарное Предприятие "Научно-исследовательский физико-химический институт им. Л.Я. Карпова" (НИФХИМ им. Л.Я. Карпова) | Способ импульсно-лазерного получения тонких пленок материалов с высокой диэлектрической проницаемостью |
| JP2006179213A (ja) * | 2004-12-21 | 2006-07-06 | Seiko Epson Corp | パターン形成基板、電気光学装置及び電気光学装置の製造方法 |
| US7459100B2 (en) * | 2004-12-22 | 2008-12-02 | Lam Research Corporation | Methods and apparatus for sequentially alternating among plasma processes in order to optimize a substrate |
| US7491647B2 (en) * | 2005-03-08 | 2009-02-17 | Lam Research Corporation | Etch with striation control |
| US7241683B2 (en) * | 2005-03-08 | 2007-07-10 | Lam Research Corporation | Stabilized photoresist structure for etching process |
| US8314024B2 (en) | 2008-12-19 | 2012-11-20 | Unity Semiconductor Corporation | Device fabrication |
| DE102005033714A1 (de) * | 2005-07-12 | 2007-01-18 | Schefenacker Vision Systems Germany Gmbh | Verfahren und Vorrichtung zur Herstellung eines elektrolumineszierenden Leuchtelements |
| WO2007046290A1 (en) * | 2005-10-18 | 2007-04-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US7910489B2 (en) * | 2006-02-17 | 2011-03-22 | Lam Research Corporation | Infinitely selective photoresist mask etch |
| JP5352081B2 (ja) * | 2006-12-20 | 2013-11-27 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| DE102008003953A1 (de) * | 2007-02-28 | 2008-09-04 | Fuji Electric Device Technology Co. Ltd. | Verfahren zur Herstellung eines Halbleiterelements |
| US7972943B2 (en) * | 2007-03-02 | 2011-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
| JP5286706B2 (ja) * | 2007-07-10 | 2013-09-11 | 三菱電機株式会社 | 電力用半導体装置とその製造方法 |
| JP4737221B2 (ja) | 2008-04-16 | 2011-07-27 | ソニー株式会社 | 表示装置 |
| US7994016B2 (en) * | 2009-11-11 | 2011-08-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for obtaining quality ultra-shallow doped regions and device having same |
| KR102044667B1 (ko) * | 2013-05-28 | 2019-11-14 | 엘지디스플레이 주식회사 | 산화물 박막 트랜지스터를 구비한 평판표시장치 및 그의 제조방법 |
| JP6333377B2 (ja) * | 2014-07-16 | 2018-05-30 | 株式会社Ｊｏｌｅｄ | トランジスタ、表示装置および電子機器 |
| CN113540283B (zh) * | 2021-06-18 | 2023-01-24 | 西安理工大学 | 一种二维电子气型光电导纵向开关及其制作方法 |
| CN118538629B (zh) * | 2024-07-26 | 2024-10-15 | 成都高投芯未半导体有限公司 | 一种igbt正面温度获取方法与igbt背面退火方法 |
Family Cites Families (113)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3437863B2 (ja) * | 1993-01-18 | 2003-08-18 | 株式会社半導体エネルギー研究所 | Ｍｉｓ型半導体装置の作製方法 |
| US3988214A (en) | 1968-06-17 | 1976-10-26 | Nippon Electric Company, Ltd. | Method of fabricating a semiconductor device |
| JPS5124341B2 (cg-RX-API-DMAC7.html) * | 1971-12-24 | 1976-07-23 | ||
| JPS4995591A (cg-RX-API-DMAC7.html) | 1973-01-12 | 1974-09-10 | ||
| US3997367A (en) | 1975-11-20 | 1976-12-14 | Bell Telephone Laboratories, Incorporated | Method for making transistors |
| US4343081A (en) * | 1979-06-22 | 1982-08-10 | L'etat Francais Represente Par Le Secretaire D'etat Aux Postes Et Telecommunications Et A La Telediffusion (Centre National D'etudes Des Telecommunications) | Process for making semi-conductor devices |
| US4409724A (en) * | 1980-11-03 | 1983-10-18 | Texas Instruments Incorporated | Method of fabricating display with semiconductor circuits on monolithic structure and flat panel display produced thereby |
| US4335161A (en) * | 1980-11-03 | 1982-06-15 | Xerox Corporation | Thin film transistors, thin film transistor arrays, and a process for preparing the same |
| GB2107115B (en) * | 1981-07-17 | 1985-05-09 | Citizen Watch Co Ltd | Method of manufacturing insulated gate thin film effect transitors |
| JPS5823479A (ja) | 1981-08-05 | 1983-02-12 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPS58105574A (ja) * | 1981-12-17 | 1983-06-23 | Seiko Epson Corp | 液晶表示装置 |
| JPS58118154A (ja) * | 1982-01-07 | 1983-07-14 | Seiko Epson Corp | 半導体集積回路装置 |
| US4590663A (en) * | 1982-02-01 | 1986-05-27 | Texas Instruments Incorporated | High voltage CMOS technology with N-channel source/drain extensions |
| JPS58186979A (ja) | 1982-04-23 | 1983-11-01 | Omron Tateisi Electronics Co | 半導体受光発光素子 |
| JPS58186949A (ja) | 1982-04-26 | 1983-11-01 | Toshiba Corp | 薄膜半導体装置の製造方法 |
| JPS59188974A (ja) | 1983-04-11 | 1984-10-26 | Nec Corp | 半導体装置の製造方法 |
| US4503601A (en) | 1983-04-18 | 1985-03-12 | Ncr Corporation | Oxide trench structure for polysilicon gates and interconnects |
| JPS59220971A (ja) | 1983-05-31 | 1984-12-12 | Toshiba Corp | 半導体装置の製造方法 |
| JPH0695563B2 (ja) * | 1985-02-01 | 1994-11-24 | 株式会社日立製作所 | 半導体装置 |
| JPS60212661A (ja) | 1984-04-05 | 1985-10-24 | Daihatsu Motor Co Ltd | 気化器の燃料増量装置 |
| US4727038A (en) | 1984-08-22 | 1988-02-23 | Mitsubishi Denki Kabushiki Kaisha | Method of fabricating semiconductor device |
| JPS61224459A (ja) | 1985-03-29 | 1986-10-06 | Toshiba Corp | 半導体装置およびその製造方法 |
| US4751196A (en) * | 1985-04-01 | 1988-06-14 | Motorola Inc. | High voltage thin film transistor on PLZT and method of manufacture thereof |
| JPS6224460A (ja) | 1985-07-23 | 1987-02-02 | Victor Co Of Japan Ltd | テ−プたるみ巻き取り装置 |
| EP0222215B1 (en) | 1985-10-23 | 1991-10-16 | Hitachi, Ltd. | Polysilicon mos transistor and method of manufacturing the same |
| US4701423A (en) | 1985-12-20 | 1987-10-20 | Ncr Corporation | Totally self-aligned CMOS process |
| US4755865A (en) | 1986-01-21 | 1988-07-05 | Motorola Inc. | Means for stabilizing polycrystalline semiconductor layers |
| JPS62229873A (ja) * | 1986-03-29 | 1987-10-08 | Hitachi Ltd | 薄膜半導体装置の製造方法 |
| JPS6319876A (ja) * | 1986-07-11 | 1988-01-27 | Fuji Xerox Co Ltd | 薄膜トランジスタ装置 |
| JPS6356916A (ja) | 1986-08-28 | 1988-03-11 | Toshiba Corp | 半導体装置の製造方法 |
| JPS6366969A (ja) | 1986-09-08 | 1988-03-25 | Nippon Telegr & Teleph Corp <Ntt> | 高耐圧多結晶シリコン薄膜トランジスタ |
| GB8623240D0 (en) * | 1986-09-26 | 1986-10-29 | Emi Plc Thorn | Display device |
| JPS6384161A (ja) * | 1986-09-29 | 1988-04-14 | Matsushita Electronics Corp | 半導体装置の製造方法 |
| JPH0687503B2 (ja) | 1987-03-11 | 1994-11-02 | 株式会社日立製作所 | 薄膜半導体装置 |
| JP2764395B2 (ja) | 1987-04-20 | 1998-06-11 | セイコーエプソン株式会社 | 薄膜トランジスタの製造方法 |
| JPS63277103A (ja) | 1987-05-01 | 1988-11-15 | Nippon Spindle Mfg Co Ltd | 粗大物破砕運搬車 |
| US5153702A (en) | 1987-06-10 | 1992-10-06 | Hitachi, Ltd. | Thin film semiconductor device and method for fabricating the same |
| JPS647567A (en) * | 1987-06-29 | 1989-01-11 | Ricoh Kk | Mos transistor |
| JPS647567U (cg-RX-API-DMAC7.html) | 1987-06-30 | 1989-01-17 | ||
| JPS6424460A (en) | 1987-07-20 | 1989-01-26 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS6424460U (cg-RX-API-DMAC7.html) | 1987-07-30 | 1989-02-09 | ||
| NL8800222A (nl) | 1988-01-29 | 1989-08-16 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting waarbij op zelfregistrerende wijze metaalsilicide wordt aangebracht. |
| JPH0666279B2 (ja) | 1988-02-05 | 1994-08-24 | 日本電信電話株式会社 | 化合物半導体薄膜の成長方法及び成長装置 |
| JP2771812B2 (ja) | 1988-02-05 | 1998-07-02 | ソニー株式会社 | 半導体装置の製造方法 |
| US5238859A (en) | 1988-04-26 | 1993-08-24 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor device |
| JP2653099B2 (ja) * | 1988-05-17 | 1997-09-10 | セイコーエプソン株式会社 | アクティブマトリクスパネル，投写型表示装置及びビューファインダー |
| US4943383A (en) * | 1988-06-23 | 1990-07-24 | Mobil Oil Corporation | Novel lubricant epoxides |
| US5493129A (en) * | 1988-06-29 | 1996-02-20 | Hitachi, Ltd. | Thin film transistor structure having increased on-current |
| US5146291A (en) | 1988-08-31 | 1992-09-08 | Mitsubishi Denki Kabushiki Kaisha | MIS device having lightly doped drain structure |
| US4978626A (en) | 1988-09-02 | 1990-12-18 | Motorola, Inc. | LDD transistor process having doping sensitive endpoint etching |
| JP2743396B2 (ja) | 1988-09-08 | 1998-04-22 | ソニー株式会社 | 半導体装置の製造方法 |
| JP2934445B2 (ja) | 1988-12-14 | 1999-08-16 | ソニー株式会社 | 薄膜トランジスタの形成方法 |
| JPH02162738A (ja) | 1988-12-15 | 1990-06-22 | Nec Corp | Ｍｏｓ ｆｅｔ の製造方法 |
| JPH02181963A (ja) | 1989-01-09 | 1990-07-16 | Nec Corp | 半導体装置の製造方法 |
| JPH02206162A (ja) | 1989-02-06 | 1990-08-15 | Matsushita Electron Corp | 半導体装置の製造方法 |
| JPH0316140A (ja) | 1989-03-14 | 1991-01-24 | Matsushita Electron Corp | Ｍｏｓ型半導体装置の製造方法 |
| JPH02246277A (ja) * | 1989-03-20 | 1990-10-02 | Matsushita Electron Corp | Ｍｏｓトランジスタおよびその製造方法 |
| DE69028669T2 (de) * | 1989-07-31 | 1997-02-20 | Canon Kk | Dünnschicht-Transistor und seine Herstellung |
| US5296401A (en) * | 1990-01-11 | 1994-03-22 | Mitsubishi Denki Kabushiki Kaisha | MIS device having p channel MOS device and n channel MOS device with LDD structure and manufacturing method thereof |
| JPH03227068A (ja) * | 1990-02-01 | 1991-10-08 | Casio Comput Co Ltd | 薄膜トランジスタおよびその製造方法 |
| JPH03244134A (ja) | 1990-02-21 | 1991-10-30 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| DE69127395T2 (de) | 1990-05-11 | 1998-01-02 | Asahi Glass Co Ltd | Verfahren zum Herstellen eines Dünnfilm-Transistors mit polykristallinem Halbleiter |
| JPH04226039A (ja) | 1990-05-11 | 1992-08-14 | Asahi Glass Co Ltd | 多結晶半導体薄膜トランジスタの製造方法及びアクティブマトリックス基板 |
| US5162933A (en) * | 1990-05-16 | 1992-11-10 | Nippon Telegraph And Telephone Corporation | Active matrix structure for liquid crystal display elements wherein each of the gate/data lines includes at least a molybdenum-base alloy layer containing 0.5 to 10 wt. % of chromium |
| JPH0442579A (ja) * | 1990-06-08 | 1992-02-13 | Seiko Epson Corp | 薄膜トランジスタ及び製造方法 |
| US5227321A (en) | 1990-07-05 | 1993-07-13 | Micron Technology, Inc. | Method for forming MOS transistors |
| JPH0475387A (ja) | 1990-07-18 | 1992-03-10 | Sony Corp | Ｍｉｓ型半導体装置 |
| US5112764A (en) * | 1990-09-04 | 1992-05-12 | North American Philips Corporation | Method for the fabrication of low leakage polysilicon thin film transistors |
| JP2947654B2 (ja) | 1990-10-31 | 1999-09-13 | キヤノン株式会社 | Ｍｉｓ型トランジスタ |
| US5514879A (en) | 1990-11-20 | 1996-05-07 | Semiconductor Energy Laboratory Co., Ltd. | Gate insulated field effect transistors and method of manufacturing the same |
| KR950013784B1 (ko) * | 1990-11-20 | 1995-11-16 | 가부시키가이샤 한도오따이 에네루기 겐큐쇼 | 반도체 전계효과 트랜지스터 및 그 제조방법과 박막트랜지스터 |
| JP2767495B2 (ja) | 1990-11-26 | 1998-06-18 | 株式会社半導体エネルギー研究所 | 半導体装置および表示装置 |
| JP2999271B2 (ja) * | 1990-12-10 | 2000-01-17 | 株式会社半導体エネルギー研究所 | 表示装置 |
| US5097301A (en) | 1990-12-19 | 1992-03-17 | Intel Corporation | Composite inverse T-gate metal oxide semiconductor device and method of fabrication |
| JPH0817236B2 (ja) | 1990-12-25 | 1996-02-21 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| KR940008180B1 (ko) * | 1990-12-27 | 1994-09-07 | 가부시끼가이샤 한도다이 에네르기 겐꾸쇼 | 액정 전기 광학 장치 및 그 구동 방법 |
| US5258325A (en) * | 1990-12-31 | 1993-11-02 | Kopin Corporation | Method for manufacturing a semiconductor device using a circuit transfer film |
| JPH04241466A (ja) * | 1991-01-16 | 1992-08-28 | Casio Comput Co Ltd | 電界効果型トランジスタ |
| JP3209229B2 (ja) | 1991-01-22 | 2001-09-17 | セイコーエプソン株式会社 | 薄膜トランジスタの製造方法 |
| JPH04254335A (ja) | 1991-02-06 | 1992-09-09 | Nec Corp | 半導体装置及びその製造方法 |
| US5521107A (en) | 1991-02-16 | 1996-05-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming a field-effect transistor including anodic oxidation of the gate |
| EP0502600A3 (en) * | 1991-03-05 | 1993-02-03 | Nview Corporation | Method and apparatus for displaying rgb and sync video without auxiliary frame storage memory |
| KR960001611B1 (ko) | 1991-03-06 | 1996-02-02 | 가부시끼가이샤 한도다이 에네르기 겐뀨쇼 | 절연 게이트형 전계 효과 반도체 장치 및 그 제작방법 |
| US5468987A (en) | 1991-03-06 | 1995-11-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
| JP2794678B2 (ja) * | 1991-08-26 | 1998-09-10 | 株式会社 半導体エネルギー研究所 | 絶縁ゲイト型半導体装置およびその作製方法 |
| JP2794499B2 (ja) * | 1991-03-26 | 1998-09-03 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| KR940000143B1 (ko) * | 1991-06-25 | 1994-01-07 | 재단법인 한국전자통신연구소 | 대형 박막 트랜지스터(TFT) 액정 디스플레이 패널(LCD panel)의 제조방법 |
| GB9114018D0 (en) * | 1991-06-28 | 1991-08-14 | Philips Electronic Associated | Thin-film transistor manufacture |
| US5151374A (en) | 1991-07-24 | 1992-09-29 | Industrial Technology Research Institute | Method of forming a thin film field effect transistor having a drain channel junction that is spaced from the gate electrode |
| US5545571A (en) * | 1991-08-26 | 1996-08-13 | Semiconductor Energy Laboratory Co., Ltd. | Method of making TFT with anodic oxidation process using positive and negative voltages |
| US5495121A (en) | 1991-09-30 | 1996-02-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP2650543B2 (ja) * | 1991-11-25 | 1997-09-03 | カシオ計算機株式会社 | マトリクス回路駆動装置 |
| JP2750380B2 (ja) | 1991-12-03 | 1998-05-13 | 株式会社 半導体エネルギー研究所 | 半導体装置の作製方法 |
| US5422293A (en) * | 1991-12-24 | 1995-06-06 | Casio Computer Co., Ltd. | Method for manufacturing a TFT panel |
| US5485019A (en) | 1992-02-05 | 1996-01-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
| JPH05226364A (ja) | 1992-02-14 | 1993-09-03 | Fujitsu Ltd | Ｍｉｓ型電界効果トランジスタの製造方法 |
| JPH05315329A (ja) * | 1992-05-11 | 1993-11-26 | Fujitsu Ltd | アルミニウム配線または電極の形成方法および薄膜トランジスタマトリックスの製造方法 |
| US5241193A (en) | 1992-05-19 | 1993-08-31 | Motorola, Inc. | Semiconductor device having a thin-film transistor and process |
| DE69327028T2 (de) * | 1992-09-25 | 2000-05-31 | Sony Corp., Tokio/Tokyo | Flüssigkristall-Anzeigevorrichtung |
| US5576556A (en) | 1993-08-20 | 1996-11-19 | Semiconductor Energy Laboratory Co., Ltd. | Thin film semiconductor device with gate metal oxide and sidewall spacer |
| US5403762A (en) * | 1993-06-30 | 1995-04-04 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating a TFT |
| US5492843A (en) | 1993-07-31 | 1996-02-20 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating semiconductor device and method of processing substrate |
| TW297142B (cg-RX-API-DMAC7.html) | 1993-09-20 | 1997-02-01 | Handotai Energy Kenkyusho Kk | |
| JP3030368B2 (ja) | 1993-10-01 | 2000-04-10 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
| JPH07135323A (ja) | 1993-10-20 | 1995-05-23 | Semiconductor Energy Lab Co Ltd | 薄膜状半導体集積回路およびその作製方法 |
| JP3153065B2 (ja) * | 1993-12-27 | 2001-04-03 | 株式会社半導体エネルギー研究所 | 半導体集積回路の電極の作製方法 |
| KR100321541B1 (ko) | 1994-03-09 | 2002-06-20 | 야마자끼 순페이 | 능동 매트릭스 디스플레이 장치의 작동 방법 |
| US6433361B1 (en) | 1994-04-29 | 2002-08-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor integrated circuit and method for forming the same |
| JP3312083B2 (ja) | 1994-06-13 | 2002-08-05 | 株式会社半導体エネルギー研究所 | 表示装置 |
| JP3227068B2 (ja) | 1994-11-21 | 2001-11-12 | ローランド株式会社 | ハウリング防止装置 |
| JPH09191111A (ja) * | 1995-11-07 | 1997-07-22 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| US6259138B1 (en) * | 1998-12-18 | 2001-07-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having multilayered gate electrode and impurity regions overlapping therewith |
| US6281552B1 (en) * | 1999-03-23 | 2001-08-28 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistors having ldd regions |
-
1993
- 1993-11-29 JP JP32311793A patent/JP3437863B2/ja not_active Expired - Fee Related
-
1994
- 1994-01-12 TW TW083100209A patent/TW234771B/zh active
- 1994-01-18 US US08/181,907 patent/US5627084A/en not_active Expired - Fee Related
- 1994-01-18 CN CN94101918A patent/CN1058108C/zh not_active Expired - Lifetime
- 1994-01-18 CN CN2006100944920A patent/CN101090124B/zh not_active Expired - Lifetime
- 1994-01-18 KR KR1019940001012A patent/KR0145458B1/ko not_active Expired - Fee Related
- 1994-01-18 CN CNB2004100422940A patent/CN1297007C/zh not_active Expired - Lifetime
-
1997
- 1997-01-08 US US08/780,714 patent/US5939731A/en not_active Expired - Lifetime
- 1997-05-13 US US08/855,143 patent/US6489632B1/en not_active Expired - Fee Related
-
1998
- 1998-07-07 CN CNB981159605A patent/CN1156016C/zh not_active Expired - Lifetime
-
2002
- 2002-11-22 US US10/301,777 patent/US6995432B2/en not_active Expired - Fee Related
-
2005
- 2005-07-12 US US11/178,308 patent/US7408233B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1058108C (zh) | 2000-11-01 |
| US5939731A (en) | 1999-08-17 |
| CN1156016C (zh) | 2004-06-30 |
| JP3437863B2 (ja) | 2003-08-18 |
| KR0145458B1 (ko) | 1998-08-17 |
| CN1538522A (zh) | 2004-10-20 |
| US6995432B2 (en) | 2006-02-07 |
| US20030107036A1 (en) | 2003-06-12 |
| CN101090124A (zh) | 2007-12-19 |
| US6489632B1 (en) | 2002-12-03 |
| US5627084A (en) | 1997-05-06 |
| CN1297007C (zh) | 2007-01-24 |
| CN101090124B (zh) | 2011-11-02 |
| US20050250266A1 (en) | 2005-11-10 |
| JPH06267982A (ja) | 1994-09-22 |
| US7408233B2 (en) | 2008-08-05 |
| CN1219775A (zh) | 1999-06-16 |
| CN1092556A (zh) | 1994-09-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW234771B (cg-RX-API-DMAC7.html) | ||
| KR100320789B1 (ko) | 반도체장치 | |
| US6790749B2 (en) | Method of manufacturing a semiconductor device | |
| KR100329303B1 (ko) | 반도체장치제조방법 | |
| US7135741B1 (en) | Method of manufacturing a semiconductor device | |
| US7573110B1 (en) | Method of fabricating semiconductor devices | |
| US6140164A (en) | Method of manufacturing a semiconductor device | |
| JP3030367B2 (ja) | 半導体装置およびその作製方法 | |
| KR20040103491A (ko) | 반도체 장치 및 그 제조 방법 | |
| JP3431653B2 (ja) | Ｍｉｓ型半導体装置の作製方法 | |
| CN100382255C (zh) | 平坦多晶硅薄膜晶体管的制作方法 | |
| JPH0738113A (ja) | 薄膜トランジスタの製造方法 | |
| JP2006332172A (ja) | 半導体装置及び半導体装置の製造方法 | |
| JP3394406B2 (ja) | 結晶性珪素膜の作製方法 | |
| JP3765936B2 (ja) | 半導体装置の作製方法 | |
| JPH09312406A (ja) | 半導体装置の作製方法 | |
| JP3535275B2 (ja) | 半導体装置の作製方法 | |
| JP3226655B2 (ja) | 薄膜トランジスタの作製方法 | |
| JP4230307B2 (ja) | 半導体装置及びその作製方法 | |
| JP3431857B2 (ja) | 半導体装置の作製方法 | |
| TW295705B (en) | Manufacturing method of a semiconductor device | |
| JP4889943B2 (ja) | 半導体装置の作製方法 | |
| KR0185822B1 (ko) | 반도체장치 | |
| JP3352975B2 (ja) | Ｍｉｓ型半導体装置の作製方法 | |
| JPH08162403A (ja) | 有機物マスクのアッシング方法 |