TW201513215A - 氮化矽的選擇性蝕刻 - Google Patents
氮化矽的選擇性蝕刻 Download PDFInfo
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- TW201513215A TW201513215A TW103126616A TW103126616A TW201513215A TW 201513215 A TW201513215 A TW 201513215A TW 103126616 A TW103126616 A TW 103126616A TW 103126616 A TW103126616 A TW 103126616A TW 201513215 A TW201513215 A TW 201513215A
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- 229910052581 Si3N4 Inorganic materials 0.000 title abstract description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 170
- 238000012545 processing Methods 0.000 claims abstract description 131
- 238000000034 method Methods 0.000 claims abstract description 111
- 239000002243 precursor Substances 0.000 claims abstract description 107
- 239000011737 fluorine Substances 0.000 claims abstract description 71
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 71
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 63
- 239000001301 oxygen Substances 0.000 claims abstract description 60
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 56
- 238000005530 etching Methods 0.000 claims abstract description 38
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 59
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 55
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 43
- 229910052757 nitrogen Inorganic materials 0.000 claims description 32
- 230000001590 oxidative effect Effects 0.000 claims description 26
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 22
- 229910052732 germanium Inorganic materials 0.000 claims description 16
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 16
- 229910052707 ruthenium Inorganic materials 0.000 claims description 10
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 8
- 238000009616 inductively coupled plasma Methods 0.000 claims description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 3
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 3
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims description 3
- SPPCMVNDPDQNRG-UHFFFAOYSA-L [F-].[F-].[Sb++] Chemical compound [F-].[F-].[Sb++] SPPCMVNDPDQNRG-UHFFFAOYSA-L 0.000 claims 2
- 210000002381 plasma Anatomy 0.000 abstract description 284
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 3
- 229920005591 polysilicon Polymers 0.000 abstract description 3
- 229910052710 silicon Inorganic materials 0.000 abstract description 2
- 239000010703 silicon Substances 0.000 abstract description 2
- 230000037361 pathway Effects 0.000 abstract 1
- 230000008569 process Effects 0.000 description 63
- 239000007789 gas Substances 0.000 description 44
- 150000002500 ions Chemical class 0.000 description 29
- 239000000463 material Substances 0.000 description 17
- 150000003254 radicals Chemical class 0.000 description 17
- 241000894007 species Species 0.000 description 15
- 235000012431 wafers Nutrition 0.000 description 15
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 8
- 238000000151 deposition Methods 0.000 description 8
- 239000001257 hydrogen Substances 0.000 description 8
- 229910052739 hydrogen Inorganic materials 0.000 description 8
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 8
- 229910052799 carbon Inorganic materials 0.000 description 7
- 230000007935 neutral effect Effects 0.000 description 7
- 238000011144 upstream manufacturing Methods 0.000 description 7
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 230000005284 excitation Effects 0.000 description 6
- 239000011261 inert gas Substances 0.000 description 6
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical group O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- 239000012159 carrier gas Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- -1 polysilicon Chemical compound 0.000 description 5
- 229910052715 tantalum Inorganic materials 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910000420 cerium oxide Inorganic materials 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 229910052734 helium Inorganic materials 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000004590 computer program Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000001272 nitrous oxide Substances 0.000 description 3
- 238000009827 uniform distribution Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 2
- 240000002989 Euphorbia neriifolia Species 0.000 description 2
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 2
- 239000013626 chemical specie Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- RWRIWBAIICGTTQ-UHFFFAOYSA-N difluoromethane Chemical compound FCF RWRIWBAIICGTTQ-UHFFFAOYSA-N 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 230000005281 excited state Effects 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 2
- 239000003574 free electron Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910052778 Plutonium Inorganic materials 0.000 description 1
- 229910018503 SF6 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- WYEMLYFITZORAB-UHFFFAOYSA-N boscalid Chemical compound C1=CC(Cl)=CC=C1C1=CC=CC=C1NC(=O)C1=CC=CN=C1Cl WYEMLYFITZORAB-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- UZBMLWGAEQOROI-UHFFFAOYSA-L difluororuthenium Chemical compound F[Ru]F UZBMLWGAEQOROI-UHFFFAOYSA-L 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 210000005069 ears Anatomy 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 150000002835 noble gases Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- OYEHPCDNVJXUIW-UHFFFAOYSA-N plutonium atom Chemical compound [Pu] OYEHPCDNVJXUIW-UHFFFAOYSA-N 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- FQFKTKUFHWNTBN-UHFFFAOYSA-N trifluoro-$l^{3}-bromane Chemical compound FBr(F)F FQFKTKUFHWNTBN-UHFFFAOYSA-N 0.000 description 1
- JOHWNGGYGAVMGU-UHFFFAOYSA-N trifluorochlorine Chemical compound FCl(F)F JOHWNGGYGAVMGU-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
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- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
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Abstract
茲描述蝕刻經圖案化異質結構上之氮化矽的方法,且該方法包括由含氟前驅物及含氮及氧前驅物形成的遠端電漿蝕刻。來自兩種遠端電漿之電漿流出物被流入基板處理區,電漿流出物在基板處理區與氮化矽反應。電漿流出物與經圖案化異質結構反應,以選擇性地移除氮化矽,同時非常緩慢地移除矽,如多晶矽。氮化矽選擇性部分起因於使用相異的(但可能重疊的)電漿路徑導入含氟前驅物及含氮及氧前驅物,所述相異的電漿路徑可為串聯或並聯。
Description
本發明的實施例係有關於選擇性地移除氮化矽。
透過在基板表面上生產錯綜複雜圖案化的材料層之製程,可製作積體電路。在基板上生產圖案化材料需要受控的方法以移除暴露的材料。化學蝕刻用於各種目的,包括將光阻中的圖案轉移進入下面的層中、薄化層或薄化已經存在於表面上的特徵結構之側向尺寸。通常,期望具有蝕刻一種材料比另一種快的蝕刻製程,以助於例如圖案轉移製程進行。此類蝕刻製程可說是對第一材料有選擇性。材料、電路與製程多樣化的結果是,蝕刻製程已被開發成具有對多種材料的選擇性。然而,僅有少數選項能選擇性地以比移除矽更快的速度來移除氮化矽。
就選擇地移除半導體基板上的材料而言,通常期望使用乾式蝕刻製程。乾式蝕刻製程受到期望的原因是源自於在最小化物理干擾的情況下,從微型結構溫和地移除材料的能力。藉由移除氣相試劑,乾式蝕刻製程也容許蝕刻速率突然停止。某些乾式蝕刻製程會使基板暴露於由一或多種前驅
物所形成之遠端電漿副產物。舉例而言,當電漿流出物流入基板處理區時,氨及三氟化氮的遠端電漿激發能自經圖案化基板選擇地移除氧化矽。遠端電漿蝕刻製程也被發展來移除氮化矽,然而,這些蝕刻製程的氮化矽選擇性(相對於矽)已受到限制。
因此,需要可就乾式蝕刻製程改良相應於矽之氮化矽選擇性的方法。
茲描述蝕刻經圖案化異質結構上之氮化矽的方法,且該方法包括由含氟前驅物及含氮及氧前驅物形成的遠端電漿蝕刻。來自兩種遠端電漿之電漿流出物被流入基板處理區,電漿流出物在基板處理區與氮化矽反應。電漿流出物可與經圖案化異質結構反應,以選擇性地移除氮化矽,同時非常緩慢地移除矽,如多晶矽。氮化矽選擇性部分起因於將含氟前驅物及含氮及氧前驅物導入兩個分隔的電漿,所述電漿可串聯或並聯佈置。可依序在兩種電漿中激發含氮及氧前驅物,且可僅在下游電漿中激發(至少部分)含氟前驅物。或者,可在高功率電漿中激發含氮及氧前驅物,且可在低強度電漿中激發含氟前驅物,在這樣的例子中,可用雙通道噴淋頭使各自的電漿流出物在基板處理區中結合。
本發明的實施例包括蝕刻經圖案化基板的方法。所述方法包括傳送經圖案化基板進入基板處理腔室的基板處理區。經圖案化基板具有暴露的氮化矽。所述方法更包括將含氮及氧前驅物流入第一遠端電漿區,同時於第一遠端電漿區
中形成第一遠端電漿,以產生氧化電漿流出物,第一遠端電漿區流通地耦接第二遠端電漿區。所述方法更包括將含氟前驅物流入第二遠端電漿區,同時於第二遠端電漿區中形成第二遠端電漿,以產生蝕刻電漿流出物,第二遠端電漿區流通地耦接基板處理區。所述方法更包括經由噴淋頭中之通孔,將各氧化電漿流出物及蝕刻電漿流出物流入基板處理區。所述方法更包括蝕刻暴露的氮化矽。經圖案化基板進一步包含暴露的矽。
本發明的實施例包括蝕刻經圖案化基板的方法。所述方法包括傳送經圖案化基板進入基板處理腔室的基板處理區。經圖案化基板包括暴露的氮化矽區及暴露的矽區。所述方法更包括將含氮及氧前驅物流入第一遠端電漿區,同時於遠端電漿系統中形成第一遠端電漿,以產生氧化電漿流出物。所述方法更包括將含氟前驅物流入與第一電漿區不同之第二遠端電漿區,同時於第二遠端電漿區中形成第二遠端電漿,以產生自由基-氟。所述方法更包括於基板處理腔室中結合氧化電漿流出物及自由基-氟。氧化電漿流出物及自由基-氟流經多通道噴淋頭的個別通道。所述方法更包括在較暴露的矽更大之蝕刻速率下,選擇性地蝕刻暴露的氮化矽。
本發明的實施例包括蝕刻經圖案化基板的方法。所述方法包括傳送經圖案化基板進入基板處理腔室的基板處理區。經圖案化基板包括暴露的氮化矽區及暴露的矽區。所述方法更包括將N2O流入設置在基板處理腔室外部之第一遠端電漿,以產生氧化電漿流出物。所述方法更包括將NF3流入
獨立於第一遠端電漿之第二遠端電漿,以產生含氟電漿流出物。NF3實質上不在第一遠端電漿中被激發。所述方法更包括在基板處理腔室中結合氧化電漿流出物與含氟電漿流出物。所述方法更包括相對於暴露的矽,選擇性地蝕刻暴露的氮化矽。
部分額外實施例與特徵在隨後的說明書中提出,而對於此技術領域中具有通常知識者而言在詳閱此說明書後可易於瞭解部分額外實施例與特徵,或者此技術領域中熟習技藝者可透過操作實施例而瞭解部分額外實施例與特徵。透過在說明書中描述的設備、結合物與方法,可實現與獲得實施例之特徵與優點。
100‧‧‧蝕刻製程
110~145‧‧‧操作
200‧‧‧蝕刻製程
210~245‧‧‧操作
1001‧‧‧基板處理腔室
1010‧‧‧遠端電漿系統
1011‧‧‧氣體入口組件
1012‧‧‧第一通道
1013‧‧‧第二通道
1020‧‧‧腔室電漿區
1021‧‧‧蓋體
1024‧‧‧絕緣環
1026‧‧‧長度
1050‧‧‧最小直徑
1051‧‧‧中空容積
1053‧‧‧噴淋頭/穿孔的隔件
1055‧‧‧小孔
1056‧‧‧通孔
1070‧‧‧基板處理區
1101‧‧‧系統
1102‧‧‧前開式晶圓盒
1104‧‧‧機器人手臂
1106‧‧‧低壓保持區
1108a~1108f‧‧‧晶圓處理腔室
1110‧‧‧機器人手臂
1155‧‧‧氣體操縱系統
1157‧‧‧系統控制器
透過參考說明書的其餘部份及圖式,可進一步瞭解實施例的本質與優點。
第1圖為根據實施例之氮化矽選擇性蝕刻製程的流程圖。
第1圖為根據實施例之氮化矽選擇性蝕刻製程的流程圖。
第3A圖顯示根據實施例之基板處理腔室。
第3B圖顯示根據實施例之基板處理腔室的噴淋頭。
第4圖顯示根據實施例之基板處理系統。
在附圖中,相似的部件及/或特徵結構可具有相同的元件符號。進而,同類的多個部件可透過在元件符號後加上一破折號以及第二符號(該符號區別類似部件)加以區別。
倘若在說明書中僅用第一元件符號,該敘述內容可應用至具有相同第一元件符號(無論第二元件符號為何)的類似部件之任一者。
茲描述蝕刻經圖案化異質結構上之氮化矽的方法,且該方法包括由含氟前驅物及含氮及氧前驅物形成的遠端電漿蝕刻。來自兩種遠端電漿之電漿流出物被流入基板處理區,電漿流出物在基板處理區與氮化矽反應。電漿流出物可與經圖案化異質結構反應,以選擇性地移除氮化矽,同時非常緩慢地移除矽,如多晶矽。氮化矽選擇性部分起因於將含氟前驅物及含氮及氧前驅物導入兩個分隔的電漿,所述電漿可串聯或並聯佈置。可依序在兩種電漿中激發含氮及氧前驅物,且可僅在下游電漿中激發含氟前驅物。或者,可在高功率電漿中激發含氮及氧前驅物,且可在低強度電漿中激發含氟前驅物,在這樣的例子中,可用雙通道噴淋頭使各自的電漿流出物在基板處理區中結合。
為了更好了解並明瞭本發明,現請參照第1圖,其為根據實施例之氮化矽選擇性蝕刻製程100的流程圖。在進行第一個操作之前,結構被形成於經圖案化基板中。所述結構擁有氮化矽及矽之暴露區。接著在操作110中傳送基板進入基板處理區。
將氧化亞氮(N2O)流入遠端電漿系統(操作120)。在遠端電漿區中形成的第一遠端電漿中激發N2O。遠端電漿系統位在基板處理腔室外部。更一般而言,可將含氮及氧前驅
物流入遠端電漿系統,且含氮及氧前驅物可包含選自N2O、NO、N2O2、NO2中之至少一種前驅物。含氮及氧前驅物可基本上由氮及氧組成,或由氮及氧組成。某些含氮及氧前驅物可能很具電負性且需要高電漿功率來形成氧化電漿流出物。接著將氧化電漿流出物通入遠端電漿區,可以低電漿功率激發氧化電漿流出物而形成第二遠端電漿。遠端電漿系統位在遠端電漿區上游,這是因為流出物通常自遠端電漿系統流入遠端電漿區,但反之不可。
可將三氟化氮流導入遠端電漿區並與氧化電漿流出物結合(操作125)。在實施例中,可將三氟化氮直接流入遠端電漿區且不進入上游遠端電漿系統。可將另一個三氟化氮流直接加入上游遠端電漿路徑,且已發現可有助於調整蝕刻速率及/或增進蝕刻速率一致性。也可使用其它氟源來擴增或取代三氟化氮。一般而言,可將含氟前驅物流入電漿區,且含氟前驅物包含選自由原子氟、雙原子氟、三氟化溴、三氟化氯、三氟化氮、氟化氫、六氟化硫及二氟化氙所組成之群組中的至少一種前驅物。即使是含碳前驅物,如四氟化碳、三氟甲烷、二氟甲烷及氟代甲烷,也可被加入已經列出的群組中。使用含碳前驅物通常需要使用於含氮及氧前驅物的流速或電漿功率增加,以在碳併入基板之前與碳反應。
可將在遠端電漿區中形成的電漿流出物流入基板處理區(操作130)。選擇性地蝕刻經圖案化基板(操作135),使能在比移除暴露的矽更高的速率下選擇性地移除暴露的氮化矽。已發現氮及氧的存在可積極地氧化暴露的矽,造成矽區
塊基本上無法由根據實施例之含氟電漿流出物所蝕刻。經圖案化基板上也可存在有暴露的氧化矽區。從基板處理區移除反應性化學物種,且接著從處理區移出基板(操作145)。
流入遠端電漿系統並接著流入遠端電漿區之N2O流(或另一種含氮及氧前驅物),可導致氧化電漿流出物流(所述氧化電漿流出物含有自由基-氮-氧)進入基板處理區。本文將使用電漿流出物來涵蓋含氟電漿流出物及氧化電漿流出物。氧化電漿流出物包括自由基-氮-氧。自由基-氮-氧被認為含有一氧化氮(NO),一氧化氮的過度反應性使其不能被直接傳送至基板處理區。自由基-氮-氧含有自由基,所述自由基包含氮及氧,且在實施例中可由氮及氧構成。自由基-氮-氧可為在操作130中流入基板處理區之電漿流出物的成分。電漿流出物也可包含自流入遠端電漿區之含氟前驅物所形成的自由基-氟。進入基板處理區的自由基-氮-氧流使自由基-氟能移除氮化矽,同時限制暴露之矽的移除速率。進入基板處理區之自由基-氮-氧流對氧化矽的暴露區僅有小部分影響,且自由基-氟實質上無法蝕刻氧化矽區。
包括含氮及氧前驅物及由含氮及氧前驅物產生的自由基-氮-氧,如本文所述,可能不會顯著地影響氮化矽的蝕刻速率,但會降低矽的蝕刻速率,導致相對高的選擇性。已發現含氮及氧前驅物可意外地比氧更積極地將矽氧化,且可普遍而可靠地增加選擇性。本文所述之蝕刻製程參數可應用於本文所揭露的所有實施例,包括以下所描述之第2圖中所描繪的實施例。在實施例中,蝕刻製程100的選擇性(暴露的氮
化矽:暴露的矽)大於或等於約20:1、大於或等於約25:1或大於或等於約30:1。含氟前驅物及/或含氮及氧前驅物可進一步包括一或多種相對的惰性氣體(如,He、N2、Ar)。含氟前驅物及/或含氮及氧前驅物可進一步包括一或多種反應性氣體(如,H2、O2)。可用惰性氣體來增進電漿穩定性、可點燃性(strikability)或均勻性。可用不同氣體的流速及比例來控制蝕刻速率及蝕刻選擇性。在一實施例中,含氟氣體包括流速介於約5sccm(每分鐘標準立方公分)與300sccm之間的NF3、流速介於約50sccm與2slm(每分鐘標準公升)之間的N2O,以及流速介於約0sccm與3000sccm之間的He。可包括氬(特別是在開始點燃電漿時)以促進電漿的啟動。本案所屬技術領域中的習知技藝者可認知到,可依照多種因素來使用其它氣體及/或流,所述因素可包括處理腔室配置、基板尺寸、待蝕刻特徵的表面形貌及佈局。
某些含氫前驅物也可與其它前驅物結合,或單獨流入電漿區,然而,應將電漿區中之氫的相對原子濃度保持在低濃度。氫可在電漿中與含氟前驅物交互作用,以形成前驅物,所形成的前驅物可藉由在氧化表面上形成固體殘留副產物來移除氧化矽。此反應降低了暴露的氮化矽區相較於暴露的氧化矽區之選擇性。儘管導入部分氫可能有幫助,但在根據實施例的蝕刻製程100期間,可能仍不要或基本上不要有氫流入電漿區。
一般而言,可用具有兩個串連的遠端電漿區之各種腔室配置來進行本文所述之蝕刻製程100。第一遠端電漿區位
在第二遠端電漿區的上游,且第二遠端電漿區位在基板處理區的上游。在第1圖的實例中,遠端電漿系統代表第一遠端電漿區,且遠端電漿區為第二遠端電漿區。含氮及氧前驅物流入第一遠端電漿區,且含氟前驅物流入第二遠端電漿區。根據實施例,含氮及氧前驅物可能更具電負性而可能需要某些額外電漿激發,以產生具有延伸的製程視窗之蝕刻製程100。
第一遠端電漿區被用來形成第一遠端電漿,通常使用第一遠端電漿功率來形成第一遠端電漿,第一遠端電漿功率大於在第二遠端電漿區中形成之第二遠端電漿的第二遠端電漿功率。就此而言,通常流入第二遠端電漿區(位於第一遠端電漿區的下游,且位於基板處理區的上游)的含氟前驅物可降低離子濃度,並容許噴淋頭或離子抑制器(ion suppressor)元件進一步降低基板處理區中的離子密度。降低基板處理區中的離子濃度可進一步增加蝕刻製程100的氮化矽選擇性。
藉由將含氟前驅物導入第二遠端電漿區,同時將含氮及氧前驅物導入第一遠端電漿區上游,可理想地延伸製程視窗(process window)。也可將某些含氟前驅物流入第一遠端電漿區,並簡單地延伸可用的參數空間(parameter space),以微調暴露的材料之蝕刻均勻性、蝕刻選擇性及蝕刻速率。類似地,可將某些含氮及氧前驅物直接流入第二遠端電漿區而不先通過第一遠端電漿區。載氣(例如,氦)可用來攜帶各前驅物進入第一遠端電漿區及第二遠端電漿區中之任一或二者。
現請參見第2圖,其為根據實施例之氮化矽選擇性
蝕刻製程200的流程圖。在進行第一個操作之前,結構被形成於經圖案化基板中。所述結構擁有氮化矽及矽(如,單晶矽或多晶矽)之暴露區。接著在操作210中傳送基板進入基板處理區。
可將氧化亞氮(N2O)流入第一遠端電漿區(操作220)。在遠端電漿區中形成的第一遠端電漿中激發N2O。在實施例中,第一遠端電漿區可位在基板處理腔室外部或內部。可在第一電漿區中之第一電漿內激發含氮及氧前驅物,以形成氧化電漿流出物。可將三氟化氮流導入第二遠端電漿區(操作225)並在第二電漿中激發,以形成蝕刻電漿流出物(包括自由基-氟)。一般而言,將含氮及氧前驅物流入第一遠端電漿區,並將含氟前驅物流入第二電漿區。含氮及氧前驅物及含氟前驅物可相同於先前描述的實施例。接著在基板處理區中結合氧化電漿流出物及蝕刻電漿流出物(操作230)。在進入基板處理區之前,氧化電漿流出物及蝕刻電漿流出物不會與另一者相遇。第一電漿區與第二電漿區彼此相異。根據實施例,第一電漿區及第二電漿區僅藉由基板處理區而流通地耦接。
選擇性地蝕刻經圖案化基板(操作235),使能在比移除暴露的矽更高的速率下選擇性地移除暴露的氮化矽。如前述,已發現氮及氧的存在可積極地氧化暴露的矽,造成矽區塊基本上無法由根據實施例之含氟電漿流出物所蝕刻。經圖案化基板上也可存在有暴露的氧化矽區,且暴露的氧化矽區也可為基本上無法蝕刻的。從基板處理區移除反應性化學物種,且接著從處理區移出基板(操作245)。
所述方法也包括下列步驟:當含氟前驅物及含氮及氧前驅物處於遠端電漿區中時,對含氟前驅物及含氮及氧前驅物施加功率,以產生電漿流出物。如本案所屬技術領域中的習知技藝者可認知的,電漿可包括若干帶電荷物種及中性物種,包括自由基及離子。可使用已知的技術(例如,RF技術、電容式耦合技術、感應式耦合技術)產生電漿。在一實施例中,可將介於500瓦與5千瓦之間的第一遠端電漿功率施加至第一遠端電漿區。在實施例中,可使用感應線圈施加第一遠端電漿功率,在這樣的例子中,第一遠端電漿將被稱為感應式耦合電漿(ICP)。根據實施例,可將介於50瓦與500瓦之間的第二遠端電漿功率施加至第二遠端電漿區。根據實施例,第二遠端電漿功率可為第一遠端電漿功率之約20%或更小。在實施例中,第二遠端電漿功率可為電容式耦合電漿。在實施例中,第一遠端電漿區、第二遠端電漿區及基板處理區中的壓力可介於約0.01托耳與30托耳之間,或介於約0.1托耳與15托耳之間。第一遠端電漿區及第二遠端電漿區各自設置在基板處理區的遠端。第二遠端電漿區流通地耦接第一遠端電漿區及基板處理區中之各者。除了經過第二遠端電漿區,第一遠端電漿區不流通地耦接基板處理區。可藉由離子抑制器及/或噴淋頭使第二遠端電漿區與氣體反應區分離。
在不欲使本案申請專利範圍受到理論機制(其可能或可能不完全正確)約束的情況下,某些關於可能機制的討論可證明本案的好處。在實施例中,包括自由基-氧可使自由基-氟能選擇性地蝕刻矽及氮化矽,同時使氧化矽基本上不被蝕
刻。根據實施例,可藉由將含氮及氧前驅物含氟前驅物及含氟前驅物傳遞進入相異的遠端電漿區,而同時產生自由基-氟及自由基-氮-氧。申請人推測相當濃度的自由基-氟片段、氟離子及原子被生成並傳遞進入基板處理區。申請人進一步推測自由基-氮-氧被同時傳遞至基板處理區。自由基-氮-氧可與附近表面區中之暴露的矽區反應,以產生氧化矽層,因此暴露的矽區的表現類似於當使用自由基-氧時的暴露的氧化矽區的表現。結果是,本文概述的蝕刻方法可達成相對於矽及氧化矽二者之氮化矽的選擇性。
在實施例中,可將範例設備段落所描述的離子抑制器用來提供自由基及/或中性物種供選擇性地蝕刻氮化矽所用。離子抑制器也可稱為離子抑制元件。在實施例中,舉例而言,離子抑制器可被用來過濾蝕刻電漿流出物(包括自由基-氟),以選擇性地蝕刻氮化矽。離子抑制器可被包括在本文所描述的各範例製程中。使用電漿流出物,可達成氧化矽相對於矽及氧化矽之蝕刻速率選擇性。
可使用離子抑制器來提供自由基濃度比離子濃度高的反應性氣體。離子抑制器的功能在於顯著地減少或實質上消除從電漿產生區行進至基板的帶離子電荷物種(ionically charged species)。在離子抑制器的另一側之遠端電漿區中的電漿激發期間,可使用基板處理區中的蘭牟爾探針(Langmuir probe)來測量電子溫度。在實施例中,電子溫度可低於0.5eV、低於0.45eV、低於0.4eV或低於0.35eV。藉由定位於基板處理區與遠端電漿區之間的噴淋頭及/或離子抑制器之存
在可產生這些極低的電子溫度值。不帶電荷的中性物種和自由基物種可通過離子抑制器中的開口而在基板處反應。因為電漿的大部分帶電荷粒子被離子抑制器過濾或移除,所以不必要在蝕刻製程期間偏壓基板。相較於包括濺射和轟擊的習用電漿蝕刻製程而言,如此使用自由基和其它中性物種的製程可減少電漿損害。離子抑制器有助於將反應區中之離子物種的濃度控制在能協助製程的水平。本發明的實施例也比習用濕式蝕刻製程(其中液體的表面張力可導致小型特徵結構的彎折與剝離)更為有利。
在描述範例處理腔室和系統的過程中揭露了額外的製程參數。
第3A圖為根據實施例之基板處理腔室1001。遠端電漿系統1010可處理含氟前驅物,含氟前驅物接著行進通過氣體入口組件1011。在氣體入口組件1011內可見到兩個相異的氣體供應通道。第一通道1012可傳導剛通過遠端電漿系統1010(RPS)的前驅物,而第二通道1013則可傳導避開遠端電漿系統1010的前驅物。第一通道1012可傳導含氮及氧前驅物,且第二通道1013可傳導含氟前驅物。
圖所示之蓋體(或導電頂部分)1021及穿孔的隔件1053之間有絕緣環1024,絕緣環使得AC電位得以相對於穿孔的隔件1053施加到蓋體1021。AC電位在腔室電漿區1020中點燃電漿。自由基-氮-氧(即,經電漿激發的含氮及氧前驅物)可行進經過第一通道1012進入腔室電漿區1020,且可受
到腔室電漿區1020中之電漿的進一步激發。含氟前驅物流經第二通道1013,且僅由腔室電漿區1020激發而不由RPS 1010激發。穿孔的隔件(又稱為噴淋頭)1053將腔室電漿區1020與位在噴淋頭1053下方的基板處理區1070隔開。噴淋頭1053使電漿得以存在於腔室電漿區1020中,以避免直接於基板處理區1070中激發氣體,同時依然使受激發物種得以從腔室電漿區1020行進至基板處理區1070內。
噴淋頭1053被定位於腔室電漿區1020與基板處理區1070之間,並容許在遠端電漿系統1010及/或腔室電漿區1020內產生的電漿流出物(前驅物或其它氣體的受激發衍生物)通過複數個通孔1056,通孔1056橫切板的厚度。噴淋頭1053也具有一或多個中空容積1051,在實施例中,蒸氣或氣體形式的前驅物(如,在RPS 1010中所激發之氧化電漿流出物)可填充中空容積1051,並通過小孔1055進入基板處理區1070但不直接進入腔室電漿區1020。可將小孔1055描述為盲孔(blind hole),以表達小孔1055不像通孔1056般直接流通地耦接腔室電漿區1020。在此揭露之實施例中,噴淋頭1053比通孔1056的最小直徑1050的長度還厚。為了維持從腔室電漿區1020穿透至基板處理區1070的受激發物種之顯著濃度,可藉由形成通孔1056之較大的直徑部分使該較大的直徑部分穿過噴淋頭1053達某一程度(part way),而限制通孔的最小直徑1050的長度1026。在實施例中,通孔1056的最小直徑1050之長度可與通孔1056的最小直徑相同數量級,或者為較小的數量級。
如第3A圖所示,噴淋頭1053可經配置以符合離子抑制器的目的。或者,可包括隔離處理腔室元件(未繪示)來抑制進入基板處理區1070的離子濃度。蓋體1021及噴淋頭1053可分別具有第一電極與第二電極的功能,使得蓋體1021及噴淋頭1053可接收不同的電壓。在這些配置中,可將電功率(如,RF功率)施加至蓋體1021、噴淋頭1053或二者。舉例而言,可將電功率施加至蓋體1021,同時使噴淋頭1053(作為離子抑制器)接地。基板處理系統可包括RF產生器,RF產生器將電功率供應至蓋體及/或噴淋頭1053。施加至蓋體1021的電壓可促進腔室電漿區1020內之電漿的均勻分佈(即,減少局部化的電漿)。為了能在腔室電漿區1020中形成電漿,絕緣環1024可將蓋體1021與噴淋頭1053電性絕緣。絕緣環1024可由陶瓷製作,且可具有高崩潰電壓以避免產生火花。接近剛才所述之電容式耦合電漿部件的基板處理腔室1001的部分可進一步包括冷卻單元(未繪示),冷卻單元可包括一或多個冷卻流體通道,以用循環冷卻劑(如,水)冷卻暴露於電漿的表面。
在所顯示的實施例中,一旦製程氣體受到腔室電漿區1020中的電漿激發,噴淋頭1053可(透過通孔1056)分配製程氣體,製程氣體可含有氧、氟及/或氮,及/或分配此類製程氣體的電漿流出物。根據實施例,導入遠端電漿系統1010及/或腔室電漿區1020的製程氣體可含有氟(例如,F2、NF3或XeF2)。製程氣體也可包括諸如氦、氬、氮(N2)等等的載氣。電漿流出物可包括製程氣體的離子化或中性的衍生物,且在此亦可指是自由基氟,該前驅物即為所導入的製程氣體之原
子的組分。
通孔1056經配置以在容許不帶電的中性或自由基物種通過噴淋頭1053進入基板處理區1070的同時,阻止帶離子電荷物種遷移離開腔室電漿區1020。這些不帶電的物種可包括高度反應性物種,高度反應性物種可與較不具反應性之載氣一起藉由通孔1056輸送。如上文所提及,可減少離子物種藉由通孔1056遷移,且在某些實例中,可完全阻止或基本上消除離子物種藉由通孔1056遷移。控制離子物種通過噴淋頭1053的數量可增進對與下方晶圓基板接觸之氣體混合物的控制,從而增進對氣體混合物之沉積及/或蝕刻特性的控制。舉例而言,調整氣體混合物的離子濃度可顯著改變該氣體混合物的選擇率(如,氮化矽:矽蝕刻比例)。
根據實施例,通孔1056的數目可介於約60個與約2000個之間。通孔1056可具有各種形狀,但最容易被製成圓形。在實施例中,通孔1056的最小直徑1050可介於約0.5mm與約20mm之間,或介於約1mm與約6mm之間。在選擇通孔的截面形狀上,亦有彈性,截面可做成錐狀、柱狀或該二種形狀的組合。在實施例中,用來將未激發的前驅物導入基板處理區1070的小孔1055之數目可介於約100與約5000之間,或介於約500與約2000之間。小孔1055的直徑可介於約0.1mm與約2mm之間。
通孔1056可經配置以控制經電漿活化氣體(即,離子、自由基及/或中性物種)通過噴淋頭1053。舉例而言,通孔的深寬比(即,通孔直徑對長度比)及/或通孔的表面形貌可
受到控制,藉以減少通過噴淋頭1053的經活化氣體中的帶離子電荷物種流。噴淋頭1053中的通孔1056可包括面對腔室電漿區1020的錐形部分,以極面對基板處理區1070的柱狀部分。可訂定柱狀部分的比例及尺寸以控制通過進入基板處理區1070的離子物種流。可調整的電偏壓也可被施加至噴淋頭1053作為控制穿過噴淋頭1053的離子物種流之額外手段。
或者,通孔1056在朝向噴淋頭1053的頂表面處可具有較小的內徑(inner diameter,ID),且在朝向噴淋頭1053的底表面處可具有較大的ID。通孔1056在朝向噴淋頭1053的頂表面處可具有較大的內徑,且在朝向噴淋頭1053的底表面處可具有較小的內徑。此外,可將通孔1056的底緣切角,以在電漿流出物離開噴淋頭時,促進將電漿流出物均勻地分佈於基板處理區1070中,並因而增進電漿流出物及前驅物氣體的均勻分佈。較小的ID可設置在沿著通孔1056的多個位置處,並仍可容許噴淋頭1053降低基板處理區1070內的離子密度。離子密度的降低起因於離子在進入基板處理區1070之前與孔壁碰撞次數的增加。每次碰撞增加了藉由從孔壁獲得或失去電子而使離子中和的可能性。一般而言,通孔1056的較小ID可介於約0.2mm與約20mm之間。根據實施例,較小ID可介於約1mm與約6mm之間,或介於約0.2mm與約5mm之間。進而,通孔1056的深寬比(即,較小ID對通孔長度比)可為將近1至20。通孔的較小ID可為沿著通孔的長度可見之最小ID。通孔1056的剖面形狀一般可為柱狀、錐狀或該等形狀的任何組合。
第3B圖為根據實施例之與處理腔室一起使用的噴淋頭1053之底視圖。噴淋頭1053對應第3A圖所示之噴淋頭。通孔1056被描繪成在噴淋頭1053底部具有較大內徑(ID),且在頂部具有較小ID。小孔1055實質上平均分佈在噴淋頭的表面上,甚至分佈在通孔1056之間,這種分佈方式有助於在實施例中提供更均勻的混合。
當含氟電漿流出物及含氧電漿流出物穿過噴淋頭1053中的通孔1056抵達基板處理區1070時,範例經圖案化基板可在基板處理區1070內由基座(未繪示)支撐。在實施例中,儘管可將基板處理區1070裝配成支援電漿以供諸如固化等其它製程所用,但在蝕刻經圖案化基板期間無電漿存在。
可在噴淋頭1053上方的腔室電漿區1020中,或在噴淋頭1053下方的基板處理區1070中點燃電漿。電漿存在腔室電漿區1020中,以自流入的含氟前驅物製造自由基-氟。典型處在無線射頻(RF)範圍中的AC電壓可被施加在處理腔室的導電頂部分(蓋體1021)與噴淋頭1053之間,以於沉積期間在腔室電漿區1020中點燃電漿。RF功率供應器可產生13.56MHz的高RF頻率,但也可單獨或結合13.56MHz頻率產生其它頻率。
當基板處理區1070中的底部電漿啟動時,可使頂部電漿處在低功率或無功率下,以硬化膜或清潔形成基板處理區1070邊界的內表面。可藉由在噴淋頭1053與基座之間或在噴淋頭1053與腔室的底部之間施加AC電壓,來點燃基板處理區1070中的電漿。可在電漿存在的同時,引導清潔氣體
進入基板處理區1070。
基座可具有熱交換通道,熱交換流體流過熱交換通道以控制基板的溫度。此配置方式容許冷卻或加熱基板溫度,以維持相對低的溫度(從-20℃直到約120℃)。熱交換流體可包含乙二醇與水。可使用埋入式單迴圈埋入式加熱器元件,來電阻式加熱基座的晶圓支撐淺盤(較佳為鋁、陶瓷或前述材料之組合)達到相對高的溫度(從約120℃直到約1100℃),該加熱器元件經配置以造成平行的同心圓形式的兩個完整迴轉。加熱器元件的外部分可繞於鄰接支撐淺盤的周邊處,同時加熱器元件的內部分繞於具有較小半徑的同心圓的路徑上。連接至加熱器元件的配線穿過基座的主幹。
腔室電漿區或遠端電漿系統中的區域可稱為遠端電漿區域。於實施例中,自由基前驅物(例如,自由基-氟及自由基-氮-氧)形成於遠端電漿區域中,並行進進入基板處理區,該組合物在基板處理區中優先蝕刻氮化矽。於實施例中,電漿功率可基本上僅被施加至遠端電漿區域,以確保自由基-氟及自由基-氮-氧(二者一起被稱為電漿流出物)不會在基板處理區中進一步被激發。
在利用腔室電漿區的實施例中,被激發的電漿流出物是在與沉積區域分隔的基板處理區的區段中被產生(或在自由基-氮-氧的例子中,被進一步激發)。沉積區域(在本文中亦稱作基板處理區)是電漿流出物混合並反應以蝕刻經圖案化基板(例如,半導體晶圓)之處。被激發的電漿流出物也可伴隨著惰性氣體(在範例實例中,惰性氣體為氦氣)。在經圖案化基板
的蝕刻製程期間,本文中的基板處理區可被描述為「無電漿(plasma-free)」。「無電漿」不必然意味著該區域缺乏電漿。因通孔1056的形狀及尺寸之故,在電漿區域內所產生之相對低濃度的離子化物種及自由電子會行進穿過隔件(噴淋頭/離子抑制器)中的孔洞(口孔)。在某些實施例中,基板處理區內基本上沒有離子化物種及自由電子的濃度。腔室電漿區中之電漿的邊界是難以界定的,且可能透過噴淋頭中的口孔侵入基板處理區上。在感應耦合電漿的實例中,可直接在基板處理區內執行少量的離子化。再者,低強度的電漿可在基板處理區中生成,而不至於去除形成的膜之特徵。激發的電漿流出物生成期間造成電漿的強度離子密度遠低於腔室電漿區(就此而言,或者是遠低於遠端電漿區域)的所有原因不悖離本文所用的「無電漿」之範疇。
在實施例中,可在介於約5sccm與約500sccm之間、介於約10sccm與約300sccm之間、介於約25sccm與約200sccm之間、介於約50sccm與約150sccm之間、或介於約75sccm與約125sccm之間的速率下,將三氟化氮(或另一種含氟前驅物)流入腔室電漿區1020。在實施例中,可在大於或等於約250sccm、大於或等於約500sccm、大於或等於約1slm、大於或等於約2slm或大於或等於約5slm的速率下,將氧化亞氮(或另一種含氮及氧前驅物)流入遠端電漿區1010並接著流入腔室電漿區1020(依序)。
含氟前驅物及含氮及氧前驅物進入腔室的結合流速可佔總氣體混合物的體積的0.05%至約20%;剩餘的部分是載
氣。根據實施例,含氟前驅物及含氮及氧前驅物流入遠端電漿區域,但電漿流出物具有相同的體積流量比率。在含氟前驅物的實例中,可在含氟氣體之前先啟動淨化氣體或載氣進入遠端電漿區域,以穩定遠端電漿區域內的壓力。
施加至第一遠端電漿區及第二遠端電漿區的電漿功率可為各種頻率或為多重頻率的組合,且在這兩個遠端電漿之間的電漿功率可能不同。在範例處理系統中,可藉由在蓋體1021與噴淋頭1053之間傳遞的RF功率來提供第二遠端電漿。在實施例中,施加至第一遠端電漿區(在所述實例中之RPS1010)的RF功率可介於約250瓦與約15000瓦之間、介於約500瓦與約5000瓦之間、或介於約1000瓦與約2000瓦之間。根據實施例,施加至第二遠端電漿區(在所述實例中之腔室電漿區1020)的RF功率可介於約10瓦與約1500瓦之間、介於約20瓦與約1000瓦之間、介於約50瓦與約500瓦之間、或介於約100瓦與約200瓦之間。根據實施例,在範例處理系統中所利用的RF頻率可為低於約200kHz的低RF頻率、介於約10MHz與約15MHz之間的高RF頻率,或大於或等於約1GHz之微波頻率。
在所主張的蝕刻製程期間,基板的溫度可介於約-30℃與約150℃之間。已發現在此範圍內的較低溫度下的蝕刻速率較高。在實施例中,在本文所述的蝕刻製程期間,基板的溫度為約-20℃、0℃或更高、約5℃或更高,或約10℃或更高。在實施例中,基板溫度可為低於或等於約150℃、低於或等於約100℃、低於或等於約50℃、低於或等於約30℃、
低於或等於約20℃、低於或等於約15℃,或低於或等於約10℃。溫度或壓力上的任何上限可與下限結合,以形成額外的實施例。
在將載氣及電漿流出物流入基板處理區1070期間,可將基板處理區1070、遠端電漿系統1010或腔室電漿區1020維持在各種壓力下。基板處理區內的壓力可為低於或等於約50托耳、低於或等於約30托耳、低於或等於約20托耳、低於或等於約10托耳或低於或等於約5托耳。在實施例中,壓力可為高於或等於約0.01托耳、高於或等於約0.1托耳、高於或等於約0.2托耳、高於或等於約0.5托耳或高於或等於約1托耳。壓力的下限可與壓力的上限結合,以形成額外的實施例。資料顯示蝕刻速率的增加可為製程壓力的函數,並相應增加負載效應(loading effect),對於給定的製程流程而言,負載效應可能是或可能不是期望的或可容忍的。
在實施例中,基板處理腔室1001可整合至各種多處理平台,包括可購自美國加州聖大克勞拉市的Applied Materials,Inc.的ProducerTM GT、CenturaTM AP及EnduraTM平台。此類處理平台能夠進行數種處理操作而不破真空。可實施本文所揭露之方法的處理腔室可包括介電質蝕刻腔室或各種化學氣相沉積腔室,還有其它類型的腔室。
處理腔室可併入用以生產積體電路晶片的較大型製造系統。第4圖顯示根據實施例的一個此類沉積、烘烤及硬化腔室的系統1101。於此圖中,一對前開式晶圓盒(front opening unified pod,FOUP)1102供應基板,基板(例如,300
mm直徑之晶圓)由機器人手臂1104承接,並在置入晶圓處理腔室1108a至1108f中之一者以前先置入低壓保持區1106內。可使用第二機器人手臂1110自低壓保持區1106傳輸基板晶圓至晶圓處理腔室1108a至1108f並往回傳輸。各晶圓處理腔室1108a至1108f可被裝備成進行多個基板處理操作,所述操作包括本文所述的乾式蝕刻製程,還可包括循環層沉積(CLD)、原子層沉積(ALD)、化學氣相沉積(CVD)、物理氣相沉積(PVD)、蝕刻、預清潔、脫氣、定向及其它基板製程等額外操作。
晶圓處理腔室1108a至1108f可包括一或多個系統部件,以在基板晶圓上沉積、退火處理、硬化及/或蝕刻介電膜。在一個配置中,兩對處理腔室(如,1108c至1108d及1108e至1108f)可用於沉積介電材料於基板上,而第三對處理腔室(如,1108a至1108b)可用於蝕刻沉積的介電質。在另一個配置中,所有三對腔室(如,1108a至1108f)可經配置以在基板上蝕刻介電膜。任一或多個所述的製程可在與實施例中所示的製造系統分開的腔室上執行。
基板處理系統可由系統控制器所控制。在一示範實施例中,系統控制器包括硬碟機、軟碟機及處理器。處理器含有單板電腦(single-board computer,SBC)、類比及數位輸入/輸出板、介面板及步進馬達控制板。CVD系統的各種部件符合Versa Modular European(VME)標準,該標準定義板、卡片機架(card cage)以及連接器尺寸及類型。VME標準亦定義具有16位元資料匯流排及24位元位址匯流排之匯流排結構。
系統控制器1157可用於控制馬達、閥、流量控制器、電源供應器以及其它執行本文所述製程配方所需要的功能。氣體操縱系統1155也可由系統控制器1157控制,以將氣體引導至晶圓處理腔室1108a至1108f的其中一個或全部。系統控制器1157可仰賴來自光學感測器的反饋,以確定並且調整氣體操縱系統1155及/或晶圓處理腔室1108a至1108f中之可移動的機構組件之位置。機構組件可包括機器人、節流閥及基座,前述部件在系統控制器1157的控制下由馬達移動。
在一示範實施例中,系統控制器1157包括硬碟機(記憶體)、USB埠、軟碟機及處理器。系統控制器1157包括類比及數位輸入/輸出板、介面板及步進馬達控制板。含有基板處理腔室1001的多重腔室處理系統1101之各種部件受到系統控制器1157之控制。系統控制器執行系統控制軟體,系統控制軟體以電腦程式之形式儲存在諸如硬碟、軟碟或快閃記憶體隨身碟等電腦可讀媒體上。也可使用其它形式的記憶體。電腦程式包括指令集,該等指令集指示時點(timing)、氣體混合、腔室壓力、腔室溫度、RF功率位準、基座位置及特定製程的其它參數。
可使用由控制器執行的電腦程式產品來實施用於在基板上沉積或其它方式處理膜的製程,或者實施用於清潔腔室的製程。電腦程式編碼可以習知電腦可讀的程式語言撰寫,例如68000組語、C、C++、Pascal、Fortran或其它程式語言。使用習知的文字編輯器將適合的程式編碼輸入單一檔案或多重檔案,並且儲存於電腦可使用媒體(如電腦的記憶
體系統)或由電腦可使用媒體實施。倘若輸入的編碼文字是高階語言,則編譯編碼,而所得的編譯程序編碼隨後與預先編譯的Microsoft Windows®函式庫常式之目的碼連結。為了執行該連結、編譯的目的碼,系統使用者援用該目的碼,使電腦系統載入記憶體中的編碼。CPU隨後讀取並且執行該編碼,以進行程式中辨識的任務。
使用者與控制器之間的介面可為透過接觸感應顯示器,亦可包括滑鼠及鍵盤。在使用兩個顯示器的一個實施例中,一個顯示器安裝在清潔室壁以供操作者使用,且另一個顯示器在壁後以供維修技術人員使用。兩個顯示器可同步顯示相同資訊,在這樣的實例中,一次僅有一個顯示器被配置成接受輸入。為了選擇特定的螢幕或功能,操作者以手指或滑鼠接觸顯示螢幕上的指定區域。被接觸的區域改變該區域的強調色彩,或顯示新的選單或螢幕,確認操作者的選擇。
本文所使用的「基板(substrate)」可為具有或不具有形成在上面的多個層之支撐基板。經圖案化基板可為有各種摻雜濃度及摻雜輪廓的絕緣體或半導體,可例如為用在積體電路製造上之類型的半導體基板。經圖案化基板的暴露的「矽(silicon)」主要是Si,但也可包括少量濃度的其它基本組成分,如氮、氧、氫及碳。經圖案化基板的暴露的「氮化矽(silicon nitride)」主要是Si3N4,但也可包括少量濃度的其它基本組成分,如氧、氫及碳。經圖案化基板的暴露的「氧化矽(氧化矽)」主要是SiO2,但也可包括少量濃度的其它基本組成分,如氮、氫及碳。在某些實施例中,本文所述之氧化矽膜基本上由矽
與氧構成。
術語「前驅物(precursor)」指的是參與反應從表面移除材料或沉積材料至表面上的任何製程氣體。「電漿流出物(plasma effluent)」描述自腔室電漿區離開並且進入基板處理區的氣體。電漿流出物處於「激發態(excited state)」,其中至少有一些氣體分子處於振動型式的激發、解離及/或離子化狀態。「自由基前驅物(radical precursor)」是用於描述參與反應從表面移除材料或沉積材料在表面上的電漿流出物(離開電漿而處於激發態的氣體)。「自由基-氟(radical-fluorine)」(或「自由基-氧(radical-oxygen)」或「自由基-氮-氧(自由基-氮-氧)」)為含有氟(或氧或氮與氧)的自由基前驅物,但該自由基前驅物可能含有其它基本組成分。「惰性氣體(inert gas)」一詞是指在蝕刻製程期間或之後不會在膜中形成化學鍵結的任何氣體。範例惰性氣體包括稀有氣體(noble gas),但可包括其他氣體,只要當(一般而言)在膜中補捉到痕量的該氣體時不形成化學鍵結即可。
全文中所用之術語「間隙(gap)」與「溝槽(trench)」毫無暗指意味地是指蝕刻過的幾何形狀具有大的水平深寬比。從表面上方觀之,溝槽可呈現圓形、卵形、多邊形、矩形或各種其它形狀。溝槽可以呈現材料島狀物周圍的壕溝形狀。術語「介層孔(via)」是指低深寬比溝槽(由上方觀之),介層孔可或可不被金屬填充而形成垂直的電連接。如本文所用,共形蝕刻製程指的是以與表面相同的形狀大體上均勻地移除表面上的材料,即蝕刻過的層的表面與蝕刻前的表面大
體上平行。發明所屬技術領域中具有通常知識者將瞭解蝕刻過的介面可能不會100%共形,因此「大體上(generally)」之用語容許可接受的容忍度。
已在此揭示數個實施例,發明所屬技術領域中具有通常知識者應知可使用多種修飾例、替代架構與等效例而不背離本文揭露的實施例的精神。此外,說明書中不對多種習知製程與元件做說明,以避免不必要地混淆了本發明。因此,上述說明不應被視為對本發明範疇之限制。
當提供一範圍的數值時,除非文本中另外清楚指明,應知亦具體揭示介於該範圍的上下限值之間各個區間值至下限值單位的十分之一。亦涵蓋了所陳述數值或陳述範圍中之區間值以及與陳述範圍中任何另一陳述數值或區間值之間的每個較小範圍。該等較小範圍的上限值與下限值可獨立包含或排除於該範圍中,且各範圍(其中,在該較小範圍內包含任一個極限值、包含兩個極限值,或不含極限值)皆被本發明內所陳述之範圍涵蓋,除非在該陳述的範圍中有特別排除之限制。在所陳述之範圍包括極限值的一者或兩者之處,該範圍也包括該些排除其中任一者或兩者被包括的極限值的範圍。
本文及隨附申請專利範圍中所使用,除非本文另有明確指定,否則單數形式「一(a)」、「一(an)」及「該(the)」包括複數指示物。因此,例如,參照「一製程」包括複數個該等製程,且參照「該介電材料」包括參照一或多種介電材料及熟習此項技術者熟知之該一或多種介電材料之等效物,
等等。
同樣,申請人希望此說明書與以下申請專利範圍中所用的「包含(comprise)」與「包括(include)」等用語是指存在所陳述之特徵、整體、部件或步驟,但該等用語不排除存在或增加一或多種其他特徵、整體、部件、步驟、動作或群組。
100‧‧‧蝕刻製程
110~145‧‧‧操作
Claims (15)
- 一種蝕刻一經圖案化基板的方法,該方法包含以下步驟:傳送該經圖案化基板進入一基板處理腔室之一基板處理區,其中該經圖案化基板具有暴露的氮化矽;將一含氮及氧前驅物流入一第一遠端電漿區,同時於該第一遠端電漿區中形成一第一遠端電漿,以產生氧化電漿流出物,該第一遠端電漿區流通地耦接一第二遠端電漿區;將一含氟前驅物流入該第二遠端電漿區,同時於該第二遠端電漿區中形成一第二遠端電漿,以產生蝕刻電漿流出物,該第二遠端電漿區流通地耦接該基板處理區,其中該氧化電漿流出物在該第二遠端電漿中被進一步激發;經由一噴淋頭中之多個通孔,將各該氧化電漿流出物及該蝕刻電漿流出物流入該基板處理區;以及蝕刻該暴露的氮化矽,其中該經圖案化基板進一步包含暴露的矽。
- 如請求項1所述之方法,其中該含氮及氧前驅物包含N2O、NO、NO2或N2O2中之一種。
- 如請求項1所述之方法,其中該第一遠端電漿係一感應式耦合電漿。
- 如請求項1所述之方法,其中該第二遠端電漿係一電容式耦合電漿。
- 如請求項1所述之方法,其中該蝕刻操作之一選擇性(暴露的氮化矽:暴露的矽)係大於或約為20:1。
- 如請求項1所述之方法,其中該含氟前驅物包含NF3。
- 如請求項1所述之方法,其中該含氟前驅物包含選自由氟化氫、原子氟、雙原子氟、四氟化碳及二氟化氙所組成之群組中之一前驅物。
- 一種蝕刻一經圖案化基板的方法,該方法包含以下步驟:傳送該經圖案化基板進入一基板處理腔室之一基板處理區,其中該經圖案化基板包含暴露的氮化矽及暴露的矽;將一含氮及氧前驅物流入一第一遠端電漿區,同時於該第一遠端電漿系統中形成一第一遠端電漿,以產生氧化電漿流出物;將一含氟前驅物流入與該第一遠端電漿區不同之一第二遠端電漿區,同時於該第二遠端電漿區中形成一第二遠端電漿,以產生自由基-氟;於該基板處理腔室中結合該氧化電漿流出物與該自由基-氟,其中該氧化電漿流出物及該自由基-氟經由一多通道噴淋頭之多個個別通道流動;以及在較該暴露的矽更大之一蝕刻速率下,選擇性地蝕刻該暴露的氮化矽。
- 如請求項8所述之方法,其中在進入該基板處理區之前,該自由基-氟及該氧化電漿流出物不與另一者相遇。
- 如請求項8所述之方法,其中該含氮及氧前驅物由氮及氧組成。
- 如請求項8所述之方法,其中該含氮及氧前驅物包含N2O、NO、NO2或N2O2中之一種。
- 如請求項8所述之方法,其中該第一遠端電漿係一感應式耦合電漿,且該第二遠端電漿係一電容式耦合電漿。
- 如請求項8所述之方法,其中該含氟前驅物包含NF3。
- 如請求項8所述之方法,其中該含氟前驅物包含選自由氟化氫、原子氟、雙原子氟、四氟化碳及二氟化氙所組成之群組中之一前驅物。
- 一種蝕刻一經圖案化基板的方法,該方法包含以下步驟:傳送該經圖案化基板進入一基板處理腔室之一基板處理區,其中該該經圖案化基板包含暴露的氮化矽及暴露的矽;將N2O流入設置在該基板處理腔室外部之一第一遠端電漿,以產生氧化電漿流出物; 將NF3流入獨立於該第一遠端電漿之一第二遠端電漿,以產生含氟電漿流出物,其中該NF3實質上不在該第一遠端電漿中被激發;於該基板處理腔室中結合該氧化電漿流出物與該含氟電漿流出物;相對於該暴露的矽,選擇性地蝕刻該暴露的氮化矽。
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI648785B (zh) * | 2016-05-29 | 2019-01-21 | 東京威力科創股份有限公司 | 選擇性氮化矽蝕刻方法 |
US11081360B2 (en) | 2016-11-07 | 2021-08-03 | Tokyo Electron Limited | Method for processing workpiece |
TWI790265B (zh) * | 2017-08-04 | 2023-01-21 | 美商微材料有限責任公司 | 改良之金屬接觸定位結構 |
Families Citing this family (167)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9324576B2 (en) | 2010-05-27 | 2016-04-26 | Applied Materials, Inc. | Selective etch for silicon films |
US10283321B2 (en) | 2011-01-18 | 2019-05-07 | Applied Materials, Inc. | Semiconductor processing system and methods using capacitively coupled plasma |
US8999856B2 (en) | 2011-03-14 | 2015-04-07 | Applied Materials, Inc. | Methods for etch of sin films |
US9064815B2 (en) | 2011-03-14 | 2015-06-23 | Applied Materials, Inc. | Methods for etch of metal and metal-oxide films |
US8771536B2 (en) | 2011-08-01 | 2014-07-08 | Applied Materials, Inc. | Dry-etch for silicon-and-carbon-containing films |
US8808563B2 (en) | 2011-10-07 | 2014-08-19 | Applied Materials, Inc. | Selective etch of silicon by way of metastable hydrogen termination |
US10283615B2 (en) | 2012-07-02 | 2019-05-07 | Novellus Systems, Inc. | Ultrahigh selective polysilicon etch with high throughput |
US8916477B2 (en) * | 2012-07-02 | 2014-12-23 | Novellus Systems, Inc. | Polysilicon etch with high selectivity |
US9267739B2 (en) | 2012-07-18 | 2016-02-23 | Applied Materials, Inc. | Pedestal with multi-zone temperature control and multiple purge capabilities |
US9373517B2 (en) * | 2012-08-02 | 2016-06-21 | Applied Materials, Inc. | Semiconductor processing with DC assisted RF power for improved control |
US9034770B2 (en) | 2012-09-17 | 2015-05-19 | Applied Materials, Inc. | Differential silicon oxide etch |
US9023734B2 (en) | 2012-09-18 | 2015-05-05 | Applied Materials, Inc. | Radical-component oxide etch |
US9390937B2 (en) | 2012-09-20 | 2016-07-12 | Applied Materials, Inc. | Silicon-carbon-nitride selective etch |
US9132436B2 (en) | 2012-09-21 | 2015-09-15 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
US8969212B2 (en) | 2012-11-20 | 2015-03-03 | Applied Materials, Inc. | Dry-etch selectivity |
US8980763B2 (en) | 2012-11-30 | 2015-03-17 | Applied Materials, Inc. | Dry-etch for selective tungsten removal |
US9111877B2 (en) | 2012-12-18 | 2015-08-18 | Applied Materials, Inc. | Non-local plasma oxide etch |
US8921234B2 (en) | 2012-12-21 | 2014-12-30 | Applied Materials, Inc. | Selective titanium nitride etching |
US10256079B2 (en) | 2013-02-08 | 2019-04-09 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
US9362130B2 (en) * | 2013-03-01 | 2016-06-07 | Applied Materials, Inc. | Enhanced etching processes using remote plasma sources |
US9040422B2 (en) | 2013-03-05 | 2015-05-26 | Applied Materials, Inc. | Selective titanium nitride removal |
US10170282B2 (en) | 2013-03-08 | 2019-01-01 | Applied Materials, Inc. | Insulated semiconductor faceplate designs |
US20140271097A1 (en) | 2013-03-15 | 2014-09-18 | Applied Materials, Inc. | Processing systems and methods for halide scavenging |
US9493879B2 (en) | 2013-07-12 | 2016-11-15 | Applied Materials, Inc. | Selective sputtering for pattern transfer |
US9773648B2 (en) | 2013-08-30 | 2017-09-26 | Applied Materials, Inc. | Dual discharge modes operation for remote plasma |
US8956980B1 (en) * | 2013-09-16 | 2015-02-17 | Applied Materials, Inc. | Selective etch of silicon nitride |
US9576809B2 (en) | 2013-11-04 | 2017-02-21 | Applied Materials, Inc. | Etch suppression with germanium |
US9236265B2 (en) | 2013-11-04 | 2016-01-12 | Applied Materials, Inc. | Silicon germanium processing |
US9520303B2 (en) | 2013-11-12 | 2016-12-13 | Applied Materials, Inc. | Aluminum selective etch |
US9245762B2 (en) | 2013-12-02 | 2016-01-26 | Applied Materials, Inc. | Procedure for etch rate consistency |
US9117855B2 (en) | 2013-12-04 | 2015-08-25 | Applied Materials, Inc. | Polarity control for remote plasma |
US9287095B2 (en) | 2013-12-17 | 2016-03-15 | Applied Materials, Inc. | Semiconductor system assemblies and methods of operation |
US9263278B2 (en) | 2013-12-17 | 2016-02-16 | Applied Materials, Inc. | Dopant etch selectivity control |
US9190293B2 (en) | 2013-12-18 | 2015-11-17 | Applied Materials, Inc. | Even tungsten etch for high aspect ratio trenches |
US9287134B2 (en) | 2014-01-17 | 2016-03-15 | Applied Materials, Inc. | Titanium oxide etch |
US9396989B2 (en) | 2014-01-27 | 2016-07-19 | Applied Materials, Inc. | Air gaps between copper lines |
US9293568B2 (en) | 2014-01-27 | 2016-03-22 | Applied Materials, Inc. | Method of fin patterning |
US9385028B2 (en) | 2014-02-03 | 2016-07-05 | Applied Materials, Inc. | Air gap process |
US9499898B2 (en) | 2014-03-03 | 2016-11-22 | Applied Materials, Inc. | Layered thin film heater and method of fabrication |
US9299575B2 (en) | 2014-03-17 | 2016-03-29 | Applied Materials, Inc. | Gas-phase tungsten etch |
US9299557B2 (en) | 2014-03-19 | 2016-03-29 | Asm Ip Holding B.V. | Plasma pre-clean module and process |
US9299537B2 (en) | 2014-03-20 | 2016-03-29 | Applied Materials, Inc. | Radial waveguide systems and methods for post-match control of microwaves |
US9299538B2 (en) | 2014-03-20 | 2016-03-29 | Applied Materials, Inc. | Radial waveguide systems and methods for post-match control of microwaves |
US9136273B1 (en) | 2014-03-21 | 2015-09-15 | Applied Materials, Inc. | Flash gate air gap |
US9903020B2 (en) | 2014-03-31 | 2018-02-27 | Applied Materials, Inc. | Generation of compact alumina passivation layers on aluminum plasma equipment components |
US9269590B2 (en) | 2014-04-07 | 2016-02-23 | Applied Materials, Inc. | Spacer formation |
US9309598B2 (en) | 2014-05-28 | 2016-04-12 | Applied Materials, Inc. | Oxide and metal removal |
US9847289B2 (en) | 2014-05-30 | 2017-12-19 | Applied Materials, Inc. | Protective via cap for improved interconnect performance |
US9378969B2 (en) | 2014-06-19 | 2016-06-28 | Applied Materials, Inc. | Low temperature gas-phase carbon removal |
US9406523B2 (en) | 2014-06-19 | 2016-08-02 | Applied Materials, Inc. | Highly selective doped oxide removal method |
US9425058B2 (en) | 2014-07-24 | 2016-08-23 | Applied Materials, Inc. | Simplified litho-etch-litho-etch process |
US9496167B2 (en) | 2014-07-31 | 2016-11-15 | Applied Materials, Inc. | Integrated bit-line airgap formation and gate stack post clean |
US9159606B1 (en) | 2014-07-31 | 2015-10-13 | Applied Materials, Inc. | Metal air gap |
US9378978B2 (en) | 2014-07-31 | 2016-06-28 | Applied Materials, Inc. | Integrated oxide recess and floating gate fin trimming |
US9165786B1 (en) | 2014-08-05 | 2015-10-20 | Applied Materials, Inc. | Integrated oxide and nitride recess for better channel contact in 3D architectures |
US9659753B2 (en) | 2014-08-07 | 2017-05-23 | Applied Materials, Inc. | Grooved insulator to reduce leakage current |
US9553102B2 (en) | 2014-08-19 | 2017-01-24 | Applied Materials, Inc. | Tungsten separation |
US9355856B2 (en) * | 2014-09-12 | 2016-05-31 | Applied Materials, Inc. | V trench dry etch |
US9478434B2 (en) | 2014-09-24 | 2016-10-25 | Applied Materials, Inc. | Chlorine-based hardmask removal |
US9368364B2 (en) | 2014-09-24 | 2016-06-14 | Applied Materials, Inc. | Silicon etch process with tunable selectivity to SiO2 and other materials |
US9613822B2 (en) | 2014-09-25 | 2017-04-04 | Applied Materials, Inc. | Oxide etch selectivity enhancement |
US9966240B2 (en) | 2014-10-14 | 2018-05-08 | Applied Materials, Inc. | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
US9355922B2 (en) | 2014-10-14 | 2016-05-31 | Applied Materials, Inc. | Systems and methods for internal surface conditioning in plasma processing equipment |
US11637002B2 (en) | 2014-11-26 | 2023-04-25 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
US9299583B1 (en) | 2014-12-05 | 2016-03-29 | Applied Materials, Inc. | Aluminum oxide selective etch |
US10573496B2 (en) | 2014-12-09 | 2020-02-25 | Applied Materials, Inc. | Direct outlet toroidal plasma source |
US10224210B2 (en) | 2014-12-09 | 2019-03-05 | Applied Materials, Inc. | Plasma processing system with direct outlet toroidal plasma source |
US9502258B2 (en) | 2014-12-23 | 2016-11-22 | Applied Materials, Inc. | Anisotropic gap etch |
US9474163B2 (en) | 2014-12-30 | 2016-10-18 | Asm Ip Holding B.V. | Germanium oxide pre-clean module and process |
US9343272B1 (en) | 2015-01-08 | 2016-05-17 | Applied Materials, Inc. | Self-aligned process |
US11257693B2 (en) | 2015-01-09 | 2022-02-22 | Applied Materials, Inc. | Methods and systems to improve pedestal temperature control |
US9373522B1 (en) | 2015-01-22 | 2016-06-21 | Applied Mateials, Inc. | Titanium nitride removal |
US9449846B2 (en) | 2015-01-28 | 2016-09-20 | Applied Materials, Inc. | Vertical gate separation |
US9728437B2 (en) | 2015-02-03 | 2017-08-08 | Applied Materials, Inc. | High temperature chuck for plasma processing systems |
US20160225652A1 (en) | 2015-02-03 | 2016-08-04 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
US9275834B1 (en) * | 2015-02-20 | 2016-03-01 | Applied Materials, Inc. | Selective titanium nitride etch |
US9911620B2 (en) | 2015-02-23 | 2018-03-06 | Lam Research Corporation | Method for achieving ultra-high selectivity while etching silicon nitride |
US9881805B2 (en) | 2015-03-02 | 2018-01-30 | Applied Materials, Inc. | Silicon selective removal |
US10373850B2 (en) | 2015-03-11 | 2019-08-06 | Asm Ip Holding B.V. | Pre-clean chamber and process with substrate tray for changing substrate temperature |
US9922840B2 (en) * | 2015-07-07 | 2018-03-20 | Applied Materials, Inc. | Adjustable remote dissociation |
US10957561B2 (en) | 2015-07-30 | 2021-03-23 | Lam Research Corporation | Gas delivery system |
US9691645B2 (en) | 2015-08-06 | 2017-06-27 | Applied Materials, Inc. | Bolted wafer chuck thermal management systems and methods for wafer processing systems |
US9741593B2 (en) | 2015-08-06 | 2017-08-22 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
US9349605B1 (en) | 2015-08-07 | 2016-05-24 | Applied Materials, Inc. | Oxide etch selectivity systems and methods |
US10504700B2 (en) | 2015-08-27 | 2019-12-10 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
US9837286B2 (en) | 2015-09-04 | 2017-12-05 | Lam Research Corporation | Systems and methods for selectively etching tungsten in a downstream reactor |
US10192751B2 (en) | 2015-10-15 | 2019-01-29 | Lam Research Corporation | Systems and methods for ultrahigh selective nitride etch |
US9653310B1 (en) | 2015-11-11 | 2017-05-16 | Applied Materials, Inc. | Methods for selective etching of a silicon material |
US10825659B2 (en) | 2016-01-07 | 2020-11-03 | Lam Research Corporation | Substrate processing chamber including multiple gas injection points and dual injector |
US10699878B2 (en) | 2016-02-12 | 2020-06-30 | Lam Research Corporation | Chamber member of a plasma source and pedestal with radially outward positioned lift pins for translation of a substrate c-ring |
US10651015B2 (en) | 2016-02-12 | 2020-05-12 | Lam Research Corporation | Variable depth edge ring for etch uniformity control |
US10147588B2 (en) | 2016-02-12 | 2018-12-04 | Lam Research Corporation | System and method for increasing electron density levels in a plasma of a substrate processing system |
US10438833B2 (en) | 2016-02-16 | 2019-10-08 | Lam Research Corporation | Wafer lift ring system for wafer transfer |
US10522371B2 (en) | 2016-05-19 | 2019-12-31 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US10504754B2 (en) * | 2016-05-19 | 2019-12-10 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US9865484B1 (en) | 2016-06-29 | 2018-01-09 | Applied Materials, Inc. | Selective etch using material modification and RF pulsing |
US10410832B2 (en) | 2016-08-19 | 2019-09-10 | Lam Research Corporation | Control of on-wafer CD uniformity with movable edge ring and gas injection adjustment |
US10062575B2 (en) | 2016-09-09 | 2018-08-28 | Applied Materials, Inc. | Poly directional etch by oxidation |
US10629473B2 (en) | 2016-09-09 | 2020-04-21 | Applied Materials, Inc. | Footing removal for nitride spacer |
US9934942B1 (en) | 2016-10-04 | 2018-04-03 | Applied Materials, Inc. | Chamber with flow-through source |
US9721789B1 (en) | 2016-10-04 | 2017-08-01 | Applied Materials, Inc. | Saving ion-damaged spacers |
US10546729B2 (en) | 2016-10-04 | 2020-01-28 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
US10062585B2 (en) | 2016-10-04 | 2018-08-28 | Applied Materials, Inc. | Oxygen compatible plasma source |
US10062579B2 (en) * | 2016-10-07 | 2018-08-28 | Applied Materials, Inc. | Selective SiN lateral recess |
US9947549B1 (en) | 2016-10-10 | 2018-04-17 | Applied Materials, Inc. | Cobalt-containing material removal |
US9768034B1 (en) | 2016-11-11 | 2017-09-19 | Applied Materials, Inc. | Removal methods for high aspect ratio structures |
US10163696B2 (en) | 2016-11-11 | 2018-12-25 | Applied Materials, Inc. | Selective cobalt removal for bottom up gapfill |
US10242908B2 (en) | 2016-11-14 | 2019-03-26 | Applied Materials, Inc. | Airgap formation with damage-free copper |
US10026621B2 (en) | 2016-11-14 | 2018-07-17 | Applied Materials, Inc. | SiN spacer profile patterning |
US10319613B2 (en) * | 2016-12-13 | 2019-06-11 | Tokyo Electron Limited | Method of selectively etching first region made of silicon nitride against second region made of silicon oxide |
JP6836953B2 (ja) * | 2016-12-13 | 2021-03-03 | 東京エレクトロン株式会社 | 窒化シリコンから形成された第1領域を酸化シリコンから形成された第2領域に対して選択的にエッチングする方法 |
US10566206B2 (en) | 2016-12-27 | 2020-02-18 | Applied Materials, Inc. | Systems and methods for anisotropic material breakthrough |
US10431429B2 (en) | 2017-02-03 | 2019-10-01 | Applied Materials, Inc. | Systems and methods for radial and azimuthal control of plasma uniformity |
US10403507B2 (en) | 2017-02-03 | 2019-09-03 | Applied Materials, Inc. | Shaped etch profile with oxidation |
US10043684B1 (en) | 2017-02-06 | 2018-08-07 | Applied Materials, Inc. | Self-limiting atomic thermal etching systems and methods |
US10319739B2 (en) | 2017-02-08 | 2019-06-11 | Applied Materials, Inc. | Accommodating imperfectly aligned memory holes |
US10943834B2 (en) | 2017-03-13 | 2021-03-09 | Applied Materials, Inc. | Replacement contact process |
US10319649B2 (en) | 2017-04-11 | 2019-06-11 | Applied Materials, Inc. | Optical emission spectroscopy (OES) for remote plasma monitoring |
US11276590B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
US11276559B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Semiconductor processing chamber for multiple precursor flow |
US10497579B2 (en) | 2017-05-31 | 2019-12-03 | Applied Materials, Inc. | Water-free etching methods |
US10049891B1 (en) | 2017-05-31 | 2018-08-14 | Applied Materials, Inc. | Selective in situ cobalt residue removal |
US10920320B2 (en) | 2017-06-16 | 2021-02-16 | Applied Materials, Inc. | Plasma health determination in semiconductor substrate processing reactors |
US10541246B2 (en) | 2017-06-26 | 2020-01-21 | Applied Materials, Inc. | 3D flash memory cells which discourage cross-cell electrical tunneling |
US10727080B2 (en) | 2017-07-07 | 2020-07-28 | Applied Materials, Inc. | Tantalum-containing material removal |
US10541184B2 (en) | 2017-07-11 | 2020-01-21 | Applied Materials, Inc. | Optical emission spectroscopic techniques for monitoring etching |
US10354889B2 (en) | 2017-07-17 | 2019-07-16 | Applied Materials, Inc. | Non-halogen etching of silicon-containing materials |
US10170336B1 (en) | 2017-08-04 | 2019-01-01 | Applied Materials, Inc. | Methods for anisotropic control of selective silicon removal |
US10043674B1 (en) | 2017-08-04 | 2018-08-07 | Applied Materials, Inc. | Germanium etching systems and methods |
US10297458B2 (en) | 2017-08-07 | 2019-05-21 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
US10283324B1 (en) | 2017-10-24 | 2019-05-07 | Applied Materials, Inc. | Oxygen treatment for nitride etching |
US10128086B1 (en) | 2017-10-24 | 2018-11-13 | Applied Materials, Inc. | Silicon pretreatment for nitride removal |
US10699911B2 (en) | 2017-11-07 | 2020-06-30 | Tokyo Electron Limited | Method of conformal etching selective to other materials |
KR102003362B1 (ko) * | 2017-11-30 | 2019-10-17 | 무진전자 주식회사 | 고 선택적 실리콘 산화물 제거를 위한 건식 세정 장치 및 방법 |
US10256112B1 (en) | 2017-12-08 | 2019-04-09 | Applied Materials, Inc. | Selective tungsten removal |
US10903054B2 (en) | 2017-12-19 | 2021-01-26 | Applied Materials, Inc. | Multi-zone gas distribution systems and methods |
KR101931742B1 (ko) * | 2017-12-21 | 2018-12-24 | 무진전자 주식회사 | 반도체 기판의 건식 세정을 위한 플라즈마 장치 |
US11328909B2 (en) | 2017-12-22 | 2022-05-10 | Applied Materials, Inc. | Chamber conditioning and removal processes |
US10854426B2 (en) | 2018-01-08 | 2020-12-01 | Applied Materials, Inc. | Metal recess for semiconductor structures |
US10964512B2 (en) | 2018-02-15 | 2021-03-30 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus and methods |
US10679870B2 (en) | 2018-02-15 | 2020-06-09 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus |
TWI716818B (zh) | 2018-02-28 | 2021-01-21 | 美商應用材料股份有限公司 | 形成氣隙的系統及方法 |
US10593560B2 (en) | 2018-03-01 | 2020-03-17 | Applied Materials, Inc. | Magnetic induction plasma source for semiconductor processes and equipment |
US10319600B1 (en) | 2018-03-12 | 2019-06-11 | Applied Materials, Inc. | Thermal silicon etch |
US10497573B2 (en) | 2018-03-13 | 2019-12-03 | Applied Materials, Inc. | Selective atomic layer etching of semiconductor materials |
US10573527B2 (en) | 2018-04-06 | 2020-02-25 | Applied Materials, Inc. | Gas-phase selective etching systems and methods |
US10490406B2 (en) | 2018-04-10 | 2019-11-26 | Appled Materials, Inc. | Systems and methods for material breakthrough |
US10699879B2 (en) | 2018-04-17 | 2020-06-30 | Applied Materials, Inc. | Two piece electrode assembly with gap for plasma control |
US10886137B2 (en) | 2018-04-30 | 2021-01-05 | Applied Materials, Inc. | Selective nitride removal |
US10755941B2 (en) | 2018-07-06 | 2020-08-25 | Applied Materials, Inc. | Self-limiting selective etching systems and methods |
US10872778B2 (en) | 2018-07-06 | 2020-12-22 | Applied Materials, Inc. | Systems and methods utilizing solid-phase etchants |
US10672642B2 (en) | 2018-07-24 | 2020-06-02 | Applied Materials, Inc. | Systems and methods for pedestal configuration |
US11049755B2 (en) | 2018-09-14 | 2021-06-29 | Applied Materials, Inc. | Semiconductor substrate supports with embedded RF shield |
US10892198B2 (en) | 2018-09-14 | 2021-01-12 | Applied Materials, Inc. | Systems and methods for improved performance in semiconductor processing |
US11062887B2 (en) | 2018-09-17 | 2021-07-13 | Applied Materials, Inc. | High temperature RF heater pedestals |
US11417534B2 (en) * | 2018-09-21 | 2022-08-16 | Applied Materials, Inc. | Selective material removal |
US11682560B2 (en) | 2018-10-11 | 2023-06-20 | Applied Materials, Inc. | Systems and methods for hafnium-containing film removal |
US11121002B2 (en) | 2018-10-24 | 2021-09-14 | Applied Materials, Inc. | Systems and methods for etching metals and metal derivatives |
US11437242B2 (en) | 2018-11-27 | 2022-09-06 | Applied Materials, Inc. | Selective removal of silicon-containing materials |
WO2020131793A1 (en) * | 2018-12-20 | 2020-06-25 | Mattson Technology, Inc. | Silicon mandrel etch after native oxide punch-through |
US11721527B2 (en) | 2019-01-07 | 2023-08-08 | Applied Materials, Inc. | Processing chamber mixing systems |
US10920319B2 (en) | 2019-01-11 | 2021-02-16 | Applied Materials, Inc. | Ceramic showerheads with conductive electrodes |
US20200286742A1 (en) * | 2019-03-06 | 2020-09-10 | Kateeva, Inc. | Remote plasma etch using inkjet printed etch mask |
JP6736720B1 (ja) * | 2019-03-29 | 2020-08-05 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 半導体処理チャンバマルチステージミキシング装置 |
US11195718B2 (en) | 2019-07-03 | 2021-12-07 | Beijing E-town Semiconductor Technology Co., Ltd. | Spacer open process by dual plasma |
TW202213517A (zh) * | 2020-08-28 | 2022-04-01 | 日商東京威力科創股份有限公司 | 基板處理方法及電漿處理裝置 |
US11804380B2 (en) * | 2020-11-13 | 2023-10-31 | Tokyo Electron Limited | High-throughput dry etching of films containing silicon-oxygen components or silicon-nitrogen components by proton-mediated catalyst formation |
Family Cites Families (756)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2369620A (en) | 1941-03-07 | 1945-02-13 | Battelle Development Corp | Method of coating cupreous metal with tin |
US3451840A (en) | 1965-10-06 | 1969-06-24 | Us Air Force | Wire coated with boron nitride and boron |
US4232060A (en) | 1979-01-22 | 1980-11-04 | Richardson Chemical Company | Method of preparing substrate surface for electroless plating and products produced thereby |
US4397812A (en) | 1974-05-24 | 1983-08-09 | Richardson Chemical Company | Electroless nickel polyalloys |
US4632857A (en) | 1974-05-24 | 1986-12-30 | Richardson Chemical Company | Electrolessly plated product having a polymetallic catalytic film underlayer |
US3937857A (en) | 1974-07-22 | 1976-02-10 | Amp Incorporated | Catalyst for electroless deposition of metals |
US4006047A (en) | 1974-07-22 | 1977-02-01 | Amp Incorporated | Catalysts for electroless deposition of metals on comparatively low-temperature polyolefin and polyester substrates |
US4265943A (en) | 1978-11-27 | 1981-05-05 | Macdermid Incorporated | Method and composition for continuous electroless copper deposition using a hypophosphite reducing agent in the presence of cobalt or nickel ions |
US4234628A (en) | 1978-11-28 | 1980-11-18 | The Harshaw Chemical Company | Two-step preplate system for polymeric surfaces |
US4214946A (en) | 1979-02-21 | 1980-07-29 | International Business Machines Corporation | Selective reactive ion etching of polysilicon against SiO2 utilizing SF6 -Cl2 -inert gas etchant |
US4209357A (en) | 1979-05-18 | 1980-06-24 | Tegal Corporation | Plasma reactor apparatus |
IT1130955B (it) | 1980-03-11 | 1986-06-18 | Oronzio De Nora Impianti | Procedimento per la formazione di elettroci sulle superficie di membrane semipermeabili e sistemi elettrodo-membrana cosi' prodotti |
US4368223A (en) | 1981-06-01 | 1983-01-11 | Asahi Glass Company, Ltd. | Process for preparing nickel layer |
DE3205345A1 (de) | 1982-02-15 | 1983-09-01 | Philips Patentverwaltung Gmbh, 2000 Hamburg | "verfahren zur herstellung von fluordotierten lichtleitfasern" |
US4585920A (en) | 1982-05-21 | 1986-04-29 | Tegal Corporation | Plasma reactor removable insert |
JPS591671A (ja) | 1982-05-28 | 1984-01-07 | Fujitsu Ltd | プラズマcvd装置 |
JPS6060060A (ja) | 1983-09-12 | 1985-04-06 | 株式会社日立製作所 | 鉄道車両の扉開閉装置 |
US4579618A (en) | 1984-01-06 | 1986-04-01 | Tegal Corporation | Plasma reactor apparatus |
US4656052A (en) | 1984-02-13 | 1987-04-07 | Kyocera Corporation | Process for production of high-hardness boron nitride film |
US4571819A (en) | 1984-11-01 | 1986-02-25 | Ncr Corporation | Method for forming trench isolation structures |
JPS61276977A (ja) | 1985-05-30 | 1986-12-06 | Canon Inc | 堆積膜形成法 |
US4807016A (en) | 1985-07-15 | 1989-02-21 | Texas Instruments Incorporated | Dry etch of phosphosilicate glass with selectivity to undoped oxide |
US4714520A (en) | 1985-07-25 | 1987-12-22 | Advanced Micro Devices, Inc. | Method for filling a trench in an integrated circuit structure without producing voids |
US4749440A (en) | 1985-08-28 | 1988-06-07 | Fsi Corporation | Gaseous process and apparatus for removing films from substrates |
US4690746A (en) | 1986-02-24 | 1987-09-01 | Genus, Inc. | Interlayer dielectric process |
US4715937A (en) | 1986-05-05 | 1987-12-29 | The Board Of Trustees Of The Leland Stanford Junior University | Low-temperature direct nitridation of silicon in nitrogen plasma generated by microwave discharge |
US4951601A (en) | 1986-12-19 | 1990-08-28 | Applied Materials, Inc. | Multi-chamber integrated process system |
US5000113A (en) | 1986-12-19 | 1991-03-19 | Applied Materials, Inc. | Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process |
US4872947A (en) | 1986-12-19 | 1989-10-10 | Applied Materials, Inc. | CVD of silicon oxide using TEOS decomposition and in-situ planarization process |
US4892753A (en) | 1986-12-19 | 1990-01-09 | Applied Materials, Inc. | Process for PECVD of silicon oxide using TEOS decomposition |
US5228501A (en) | 1986-12-19 | 1993-07-20 | Applied Materials, Inc. | Physical vapor deposition clamping mechanism and heater/cooler |
US4960488A (en) | 1986-12-19 | 1990-10-02 | Applied Materials, Inc. | Reactor chamber self-cleaning process |
JPS63204726A (ja) | 1987-02-20 | 1988-08-24 | Anelva Corp | 真空処理装置 |
US4868071A (en) | 1987-02-24 | 1989-09-19 | Polyonics Corporation | Thermally stable dual metal coated laminate products made from textured polyimide film |
US5322976A (en) | 1987-02-24 | 1994-06-21 | Polyonics Corporation | Process for forming polyimide-metal laminates |
KR910006164B1 (ko) | 1987-03-18 | 1991-08-16 | 가부시키가이샤 도시바 | 박막형성방법과 그 장치 |
US4793897A (en) | 1987-03-20 | 1988-12-27 | Applied Materials, Inc. | Selective thin film etch process |
US4786360A (en) | 1987-03-30 | 1988-11-22 | International Business Machines Corporation | Anisotropic etch process for tungsten metallurgy |
US5198034A (en) | 1987-03-31 | 1993-03-30 | Epsilon Technology, Inc. | Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment |
EP0286306B1 (en) | 1987-04-03 | 1993-10-06 | Fujitsu Limited | Method and apparatus for vapor deposition of diamond |
US4913929A (en) | 1987-04-21 | 1990-04-03 | The Board Of Trustees Of The Leland Stanford Junior University | Thermal/microwave remote plasma multiprocessing reactor and method of use |
US4753898A (en) | 1987-07-09 | 1988-06-28 | Motorola, Inc. | LDD CMOS process |
US4820377A (en) | 1987-07-16 | 1989-04-11 | Texas Instruments Incorporated | Method for cleanup processing chamber and vacuum process module |
US4878994A (en) | 1987-07-16 | 1989-11-07 | Texas Instruments Incorporated | Method for etching titanium nitride local interconnects |
US4904621A (en) | 1987-07-16 | 1990-02-27 | Texas Instruments Incorporated | Remote plasma generation process using a two-stage showerhead |
US4886570A (en) | 1987-07-16 | 1989-12-12 | Texas Instruments Incorporated | Processing apparatus and method |
JPS6432627A (en) | 1987-07-29 | 1989-02-02 | Hitachi Ltd | Low-temperature dry etching method |
US4810520A (en) | 1987-09-23 | 1989-03-07 | Magnetic Peripherals Inc. | Method for controlling electroless magnetic plating |
US4865685A (en) | 1987-11-03 | 1989-09-12 | North Carolina State University | Dry etching of silicon carbide |
US4981551A (en) | 1987-11-03 | 1991-01-01 | North Carolina State University | Dry etching of silicon carbide |
US4851370A (en) | 1987-12-28 | 1989-07-25 | American Telephone And Telegraph Company, At&T Bell Laboratories | Fabricating a semiconductor device with low defect density oxide |
US4904341A (en) | 1988-08-22 | 1990-02-27 | Westinghouse Electric Corp. | Selective silicon dioxide etchant for superconductor integrated circuits |
US4894352A (en) | 1988-10-26 | 1990-01-16 | Texas Instruments Inc. | Deposition of silicon-containing films using organosilicon compounds and nitrogen trifluoride |
KR930004115B1 (ko) | 1988-10-31 | 1993-05-20 | 후지쓰 가부시끼가이샤 | 애싱(ashing)처리방법 및 장치 |
JPH02121330A (ja) | 1988-10-31 | 1990-05-09 | Hitachi Ltd | プラズマ処理方法及び装置 |
JP2981243B2 (ja) | 1988-12-27 | 1999-11-22 | 株式会社東芝 | 表面処理方法 |
EP0376252B1 (en) | 1988-12-27 | 1997-10-22 | Kabushiki Kaisha Toshiba | Method of removing an oxide film on a substrate |
US4985372A (en) | 1989-02-17 | 1991-01-15 | Tokyo Electron Limited | Method of forming conductive layer including removal of native oxide |
US5186718A (en) | 1989-05-19 | 1993-02-16 | Applied Materials, Inc. | Staged-vacuum wafer processing system and method |
US5061838A (en) | 1989-06-23 | 1991-10-29 | Massachusetts Institute Of Technology | Toroidal electron cyclotron resonance reactor |
US5270125A (en) | 1989-07-11 | 1993-12-14 | Redwood Microsystems, Inc. | Boron nutride membrane in wafer structure |
US5013691A (en) | 1989-07-31 | 1991-05-07 | At&T Bell Laboratories | Anisotropic deposition of silicon dioxide |
US4994404A (en) | 1989-08-28 | 1991-02-19 | Motorola, Inc. | Method for forming a lightly-doped drain (LDD) structure in a semiconductor device |
US4980018A (en) | 1989-11-14 | 1990-12-25 | Intel Corporation | Plasma etching process for refractory metal vias |
DE69111493T2 (de) | 1990-03-12 | 1996-03-21 | Ngk Insulators Ltd | Wafer-Heizgeräte für Apparate, zur Halbleiterherstellung Heizanlage mit diesen Heizgeräten und Herstellung von Heizgeräten. |
JP2960466B2 (ja) | 1990-03-19 | 1999-10-06 | 株式会社日立製作所 | 半導体デバイスの配線絶縁膜の形成方法及びその装置 |
US5089441A (en) | 1990-04-16 | 1992-02-18 | Texas Instruments Incorporated | Low-temperature in-situ dry cleaning process for semiconductor wafers |
US5328810A (en) | 1990-05-07 | 1994-07-12 | Micron Technology, Inc. | Method for reducing, by a factor or 2-N, the minimum masking pitch of a photolithographic process |
US5147692A (en) | 1990-05-08 | 1992-09-15 | Macdermid, Incorporated | Electroless plating of nickel onto surfaces such as copper or fused tungston |
US5238499A (en) | 1990-07-16 | 1993-08-24 | Novellus Systems, Inc. | Gas-based substrate protection during processing |
JPH04228572A (ja) | 1990-08-10 | 1992-08-18 | Sumitomo Electric Ind Ltd | 硬質窒化ホウ素合成法 |
US5235139A (en) | 1990-09-12 | 1993-08-10 | Macdermid, Incorprated | Method for fabricating printed circuits |
US5089442A (en) | 1990-09-20 | 1992-02-18 | At&T Bell Laboratories | Silicon dioxide deposition method using a magnetic field and both sputter deposition and plasma-enhanced cvd |
KR930011413B1 (ko) | 1990-09-25 | 1993-12-06 | 가부시키가이샤 한도오따이 에네루기 겐큐쇼 | 펄스형 전자파를 사용한 플라즈마 cvd 법 |
JPH04142738A (ja) | 1990-10-04 | 1992-05-15 | Sony Corp | ドライエッチング方法 |
US5549780A (en) | 1990-10-23 | 1996-08-27 | Semiconductor Energy Laboratory Co., Ltd. | Method for plasma processing and apparatus for plasma processing |
JP2640174B2 (ja) | 1990-10-30 | 1997-08-13 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
JP3206916B2 (ja) | 1990-11-28 | 2001-09-10 | 住友電気工業株式会社 | 欠陥濃度低減方法、紫外線透過用光学ガラスの製造方法及び紫外線透過用光学ガラス |
US5578130A (en) | 1990-12-12 | 1996-11-26 | Semiconductor Energy Laboratory Co., Ltd. | Apparatus and method for depositing a film |
EP0519079B1 (en) | 1991-01-08 | 1999-03-03 | Fujitsu Limited | Process for forming silicon oxide film |
JPH04239723A (ja) | 1991-01-23 | 1992-08-27 | Nec Corp | 半導体装置の製造方法 |
JP2697315B2 (ja) | 1991-01-23 | 1998-01-14 | 日本電気株式会社 | フッ素含有シリコン酸化膜の形成方法 |
JP2787142B2 (ja) | 1991-03-01 | 1998-08-13 | 上村工業 株式会社 | 無電解錫、鉛又はそれらの合金めっき方法 |
US5897751A (en) | 1991-03-11 | 1999-04-27 | Regents Of The University Of California | Method of fabricating boron containing coatings |
EP0511448A1 (en) | 1991-04-30 | 1992-11-04 | International Business Machines Corporation | Method and apparatus for in-situ and on-line monitoring of a trench formation process |
JPH04341568A (ja) | 1991-05-16 | 1992-11-27 | Toshiba Corp | 薄膜形成方法及び薄膜形成装置 |
WO1992020833A1 (en) | 1991-05-17 | 1992-11-26 | Lam Research Corporation | A PROCESS FOR DEPOSITING A SIOx FILM HAVING REDUCED INTRINSIC STRESS AND/OR REDUCED HYDROGEN CONTENT |
JP2699695B2 (ja) | 1991-06-07 | 1998-01-19 | 日本電気株式会社 | 化学気相成長法 |
US5203911A (en) | 1991-06-24 | 1993-04-20 | Shipley Company Inc. | Controlled electroless plating |
US5279865A (en) | 1991-06-28 | 1994-01-18 | Digital Equipment Corporation | High throughput interlevel dielectric gap filling process |
US5240497A (en) | 1991-10-08 | 1993-08-31 | Cornell Research Foundation, Inc. | Alkaline free electroless deposition |
JPH05226480A (ja) | 1991-12-04 | 1993-09-03 | Nec Corp | 半導体装置の製造方法 |
US5290382A (en) | 1991-12-13 | 1994-03-01 | Hughes Aircraft Company | Methods and apparatus for generating a plasma for "downstream" rapid shaping of surfaces of substrates and films |
US5352636A (en) | 1992-01-16 | 1994-10-04 | Applied Materials, Inc. | In situ method for cleaning silicon surface and forming layer thereon in same chamber |
US5300463A (en) | 1992-03-06 | 1994-04-05 | Micron Technology, Inc. | Method of selectively etching silicon dioxide dielectric layers on semiconductor wafers |
JP3084497B2 (ja) | 1992-03-25 | 2000-09-04 | 東京エレクトロン株式会社 | SiO2膜のエッチング方法 |
JP2773530B2 (ja) | 1992-04-15 | 1998-07-09 | 日本電気株式会社 | 半導体装置の製造方法 |
JP2792335B2 (ja) | 1992-05-27 | 1998-09-03 | 日本電気株式会社 | 半導体装置の製造方法 |
KR100293830B1 (ko) | 1992-06-22 | 2001-09-17 | 리차드 에이치. 로브그렌 | 플라즈마 처리 쳄버내의 잔류물 제거를 위한 플라즈마 정결방법 |
US5252178A (en) | 1992-06-24 | 1993-10-12 | Texas Instruments Incorporated | Multi-zone plasma processing method and apparatus |
JP3688726B2 (ja) | 1992-07-17 | 2005-08-31 | 株式会社東芝 | 半導体装置の製造方法 |
US5380560A (en) | 1992-07-28 | 1995-01-10 | International Business Machines Corporation | Palladium sulfate solution for the selective seeding of the metal interconnections on polyimide dielectrics for electroless metal deposition |
US5271972A (en) | 1992-08-17 | 1993-12-21 | Applied Materials, Inc. | Method for depositing ozone/TEOS silicon oxide films of reduced surface sensitivity |
US5326427A (en) | 1992-09-11 | 1994-07-05 | Lsi Logic Corporation | Method of selectively etching titanium-containing materials on a semiconductor wafer using remote plasma generation |
US5306530A (en) | 1992-11-23 | 1994-04-26 | Associated Universities, Inc. | Method for producing high quality thin layer films on substrates |
KR100238629B1 (ko) | 1992-12-17 | 2000-01-15 | 히가시 데쓰로 | 정전척을 가지는 재치대 및 이것을 이용한 플라즈마 처리장치 |
US5500249A (en) | 1992-12-22 | 1996-03-19 | Applied Materials, Inc. | Uniform tungsten silicide films produced by chemical vapor deposition |
US5756402A (en) | 1992-12-28 | 1998-05-26 | Kabushiki Kaisha Toshiba | Method of etching silicon nitride film |
US5624582A (en) | 1993-01-21 | 1997-04-29 | Vlsi Technology, Inc. | Optimization of dry etching through the control of helium backside pressure |
US5345999A (en) | 1993-03-17 | 1994-09-13 | Applied Materials, Inc. | Method and apparatus for cooling semiconductor wafers |
US5302233A (en) | 1993-03-19 | 1994-04-12 | Micron Semiconductor, Inc. | Method for shaping features of a semiconductor structure using chemical mechanical planarization (CMP) |
JP3236111B2 (ja) | 1993-03-31 | 2001-12-10 | キヤノン株式会社 | プラズマ処理装置及び処理方法 |
US5695568A (en) | 1993-04-05 | 1997-12-09 | Applied Materials, Inc. | Chemical vapor deposition chamber |
KR0142150B1 (ko) | 1993-04-09 | 1998-07-15 | 윌리엄 티. 엘리스 | 붕소 질화물을 에칭하기 위한 방법 |
US5416048A (en) | 1993-04-16 | 1995-05-16 | Micron Semiconductor, Inc. | Method to slope conductor profile prior to dielectric deposition to improve dielectric step-coverage |
EP0628644B1 (en) | 1993-05-27 | 2003-04-02 | Applied Materials, Inc. | Improvements in or relating to susceptors suitable for use in chemical vapour deposition devices |
US5591269A (en) | 1993-06-24 | 1997-01-07 | Tokyo Electron Limited | Vacuum processing apparatus |
US5413670A (en) * | 1993-07-08 | 1995-05-09 | Air Products And Chemicals, Inc. | Method for plasma etching or cleaning with diluted NF3 |
US5560779A (en) | 1993-07-12 | 1996-10-01 | Olin Corporation | Apparatus for synthesizing diamond films utilizing an arc plasma |
WO1995002900A1 (en) | 1993-07-15 | 1995-01-26 | Astarix, Inc. | Aluminum-palladium alloy for initiation of electroless plating |
DE69421465T2 (de) | 1993-07-30 | 2000-02-10 | Applied Materials Inc | Verfahren zur Ablagerung von Silzium-Nitrid auf Siliziumoberflächen |
US5483920A (en) | 1993-08-05 | 1996-01-16 | Board Of Governors Of Wayne State University | Method of forming cubic boron nitride films |
US5468597A (en) | 1993-08-25 | 1995-11-21 | Shipley Company, L.L.C. | Selective metallization process |
US5384284A (en) | 1993-10-01 | 1995-01-24 | Micron Semiconductor, Inc. | Method to form a low resistant bond pad interconnect |
SE501888C2 (sv) | 1993-10-18 | 1995-06-12 | Ladislav Bardos | En metod och en apparat för generering av en urladdning i egna ångor från en radiofrekvenselektrod för kontinuerlig självförstoftning av elektroden |
JPH07130713A (ja) | 1993-11-04 | 1995-05-19 | Fujitsu Ltd | ダウンフローエッチング装置 |
JPH07161703A (ja) | 1993-12-03 | 1995-06-23 | Ricoh Co Ltd | 半導体装置の製造方法 |
US5505816A (en) | 1993-12-16 | 1996-04-09 | International Business Machines Corporation | Etching of silicon dioxide selectively to silicon nitride and polysilicon |
JPH07193214A (ja) | 1993-12-27 | 1995-07-28 | Mitsubishi Electric Corp | バイアホール及びその形成方法 |
US5415890A (en) | 1994-01-03 | 1995-05-16 | Eaton Corporation | Modular apparatus and method for surface treatment of parts with liquid baths |
US5403434A (en) | 1994-01-06 | 1995-04-04 | Texas Instruments Incorporated | Low-temperature in-situ dry cleaning process for semiconductor wafer |
US5399237A (en) | 1994-01-27 | 1995-03-21 | Applied Materials, Inc. | Etching titanium nitride using carbon-fluoride and carbon-oxide gas |
US5451259A (en) | 1994-02-17 | 1995-09-19 | Krogh; Ole D. | ECR plasma source for remote processing |
US5439553A (en) | 1994-03-30 | 1995-08-08 | Penn State Research Foundation | Controlled etching of oxides via gas phase reactions |
US5468342A (en) | 1994-04-28 | 1995-11-21 | Cypress Semiconductor Corp. | Method of etching an oxide layer |
US6110838A (en) | 1994-04-29 | 2000-08-29 | Texas Instruments Incorporated | Isotropic polysilicon plus nitride stripping |
US5531835A (en) | 1994-05-18 | 1996-07-02 | Applied Materials, Inc. | Patterned susceptor to reduce electrostatic force in a CVD chamber |
US5580421A (en) | 1994-06-14 | 1996-12-03 | Fsi International | Apparatus for surface conditioning |
US5767373A (en) | 1994-06-16 | 1998-06-16 | Novartis Finance Corporation | Manipulation of protoporphyrinogen oxidase enzyme activity in eukaryotic organisms |
EP0697467A1 (en) | 1994-07-21 | 1996-02-21 | Applied Materials, Inc. | Method and apparatus for cleaning a deposition chamber |
US5563105A (en) | 1994-09-30 | 1996-10-08 | International Business Machines Corporation | PECVD method of depositing fluorine doped oxide using a fluorine precursor containing a glass-forming element |
JPH08148470A (ja) | 1994-11-21 | 1996-06-07 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
TW344897B (en) | 1994-11-30 | 1998-11-11 | At&T Tcorporation | A process for forming gate oxides possessing different thicknesses on a semiconductor substrate |
US5558717A (en) | 1994-11-30 | 1996-09-24 | Applied Materials | CVD Processing chamber |
US5772770A (en) | 1995-01-27 | 1998-06-30 | Kokusai Electric Co, Ltd. | Substrate processing apparatus |
US5571576A (en) | 1995-02-10 | 1996-11-05 | Watkins-Johnson | Method of forming a fluorinated silicon oxide layer using plasma chemical vapor deposition |
US6039851A (en) | 1995-03-22 | 2000-03-21 | Micron Technology, Inc. | Reactive sputter faceting of silicon dioxide to enhance gap fill of spaces between metal lines |
US5571577A (en) | 1995-04-07 | 1996-11-05 | Board Of Trustees Operating Michigan State University | Method and apparatus for plasma treatment of a surface |
JP3386287B2 (ja) | 1995-05-08 | 2003-03-17 | 堀池 靖浩 | プラズマエッチング装置 |
US20010028922A1 (en) | 1995-06-07 | 2001-10-11 | Sandhu Gurtej S. | High throughput ILD fill process for high aspect ratio gap fill |
JP2814370B2 (ja) | 1995-06-18 | 1998-10-22 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US6197364B1 (en) | 1995-08-22 | 2001-03-06 | International Business Machines Corporation | Production of electroless Co(P) with designed coercivity |
US5755859A (en) | 1995-08-24 | 1998-05-26 | International Business Machines Corporation | Cobalt-tin alloys and their applications for devices, chip interconnections and packaging |
WO1997009737A1 (en) | 1995-09-01 | 1997-03-13 | Advanced Semiconductor Materials America, Inc. | Wafer support system |
US6228751B1 (en) | 1995-09-08 | 2001-05-08 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
US5719085A (en) | 1995-09-29 | 1998-02-17 | Intel Corporation | Shallow trench isolation technique |
US5716506A (en) | 1995-10-06 | 1998-02-10 | Board Of Trustees Of The University Of Illinois | Electrochemical sensors for gas detection |
US5635086A (en) | 1995-10-10 | 1997-06-03 | The Esab Group, Inc. | Laser-plasma arc metal cutting apparatus |
JPH09106899A (ja) | 1995-10-11 | 1997-04-22 | Anelva Corp | プラズマcvd装置及び方法並びにドライエッチング装置及び方法 |
US5910340A (en) | 1995-10-23 | 1999-06-08 | C. Uyemura & Co., Ltd. | Electroless nickel plating solution and method |
US6015724A (en) | 1995-11-02 | 2000-01-18 | Semiconductor Energy Laboratory Co. | Manufacturing method of a semiconductor device |
US5599740A (en) | 1995-11-16 | 1997-02-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Deposit-etch-deposit ozone/teos insulator layer method |
US5648125A (en) | 1995-11-16 | 1997-07-15 | Cane; Frank N. | Electroless plating process for the manufacture of printed circuit boards |
JP4420986B2 (ja) | 1995-11-21 | 2010-02-24 | 株式会社東芝 | シャロウ・トレンチ分離半導体基板及びその製造方法 |
JPH09153481A (ja) | 1995-11-30 | 1997-06-10 | Sumitomo Metal Ind Ltd | プラズマ処理装置 |
US5846598A (en) | 1995-11-30 | 1998-12-08 | International Business Machines Corporation | Electroless plating of metallic features on nonmetallic or semiconductor layer without extraneous plating |
US5756400A (en) | 1995-12-08 | 1998-05-26 | Applied Materials, Inc. | Method and apparatus for cleaning by-products from plasma chamber surfaces |
US5733816A (en) | 1995-12-13 | 1998-03-31 | Micron Technology, Inc. | Method for depositing a tungsten layer on silicon |
US6261637B1 (en) | 1995-12-15 | 2001-07-17 | Enthone-Omi, Inc. | Use of palladium immersion deposition to selectively initiate electroless plating on Ti and W alloys for wafer fabrication |
EP0811083B1 (en) | 1995-12-19 | 2000-05-31 | FSI International | Electroless deposition of metal films with spray processor |
US5679606A (en) | 1995-12-27 | 1997-10-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | method of forming inter-metal-dielectric structure |
DE69623651T2 (de) | 1995-12-27 | 2003-04-24 | Lam Res Corp | Verfahren zur füllung von gräben auf einer halbleiterscheibe |
US5953591A (en) | 1995-12-28 | 1999-09-14 | Nippon Sanso Corporation | Process for laser detection of gas and contaminants in a wafer transport gas tunnel |
US6191026B1 (en) | 1996-01-09 | 2001-02-20 | Applied Materials, Inc. | Method for submicron gap filling on a semiconductor substrate |
US5674787A (en) | 1996-01-16 | 1997-10-07 | Sematech, Inc. | Selective electroless copper deposited interconnect plugs for ULSI applications |
US5891513A (en) | 1996-01-16 | 1999-04-06 | Cornell Research Foundation | Electroless CU deposition on a barrier layer by CU contact displacement for ULSI applications |
US5824599A (en) | 1996-01-16 | 1998-10-20 | Cornell Research Foundation, Inc. | Protected encapsulation of catalytic layer for electroless copper interconnect |
US5872052A (en) | 1996-02-12 | 1999-02-16 | Micron Technology, Inc. | Planarization using plasma oxidized amorphous silicon |
US5648175A (en) | 1996-02-14 | 1997-07-15 | Applied Materials, Inc. | Chemical vapor deposition reactor system and integrated circuit |
US6004884A (en) | 1996-02-15 | 1999-12-21 | Lam Research Corporation | Methods and apparatus for etching semiconductor wafers |
US5656093A (en) | 1996-03-08 | 1997-08-12 | Applied Materials, Inc. | Wafer spacing mask for a substrate support chuck and method of fabricating same |
CA2250410C (en) | 1996-03-25 | 2003-06-10 | S. George Lesinski | Attaching an implantable hearing aid microactuator |
US5858876A (en) | 1996-04-01 | 1999-01-12 | Chartered Semiconductor Manufacturing, Ltd. | Simultaneous deposit and etch method for forming a void-free and gap-filling insulator layer upon a patterned substrate layer |
US5712185A (en) | 1996-04-23 | 1998-01-27 | United Microelectronics | Method for forming shallow trench isolation |
US6313035B1 (en) | 1996-05-31 | 2001-11-06 | Micron Technology, Inc. | Chemical vapor deposition using organometallic precursors |
US6048798A (en) | 1996-06-05 | 2000-04-11 | Lam Research Corporation | Apparatus for reducing process drift in inductive coupled plasma etching such as oxide layer |
US5820723A (en) | 1996-06-05 | 1998-10-13 | Lam Research Corporation | Universal vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support |
US5846332A (en) | 1996-07-12 | 1998-12-08 | Applied Materials, Inc. | Thermally floating pedestal collar in a chemical vapor deposition chamber |
US5993916A (en) | 1996-07-12 | 1999-11-30 | Applied Materials, Inc. | Method for substrate processing with improved throughput and yield |
US6170428B1 (en) | 1996-07-15 | 2001-01-09 | Applied Materials, Inc. | Symmetric tunable inductively coupled HDP-CVD reactor |
US5781693A (en) | 1996-07-24 | 1998-07-14 | Applied Materials, Inc. | Gas introduction showerhead for an RTP chamber with upper and lower transparent plates and gas flow therebetween |
US20010012700A1 (en) | 1998-12-15 | 2001-08-09 | Klaus F. Schuegraf | Semiconductor processing methods of chemical vapor depositing sio2 on a substrate |
US5661093A (en) | 1996-09-12 | 1997-08-26 | Applied Materials, Inc. | Method for the stabilization of halogen-doped films through the use of multiple sealing layers |
US5888906A (en) | 1996-09-16 | 1999-03-30 | Micron Technology, Inc. | Plasmaless dry contact cleaning method using interhalogen compounds |
US5747373A (en) | 1996-09-24 | 1998-05-05 | Taiwan Semiconductor Manufacturing Company Ltd. | Nitride-oxide sidewall spacer for salicide formation |
US5846375A (en) | 1996-09-26 | 1998-12-08 | Micron Technology, Inc. | Area specific temperature control for electrode plates and chucks used in semiconductor processing equipment |
US5904827A (en) | 1996-10-15 | 1999-05-18 | Reynolds Tech Fabricators, Inc. | Plating cell with rotary wiper and megasonic transducer |
US5951776A (en) | 1996-10-25 | 1999-09-14 | Applied Materials, Inc. | Self aligning lift mechanism |
KR100237825B1 (ko) | 1996-11-05 | 2000-01-15 | 윤종용 | 반도체장치 제조설비의 페디스탈 |
US5804259A (en) | 1996-11-07 | 1998-09-08 | Applied Materials, Inc. | Method and apparatus for depositing a multilayered low dielectric constant film |
US5939831A (en) | 1996-11-13 | 1999-08-17 | Applied Materials, Inc. | Methods and apparatus for pre-stabilized plasma generation for microwave clean applications |
US5935334A (en) | 1996-11-13 | 1999-08-10 | Applied Materials, Inc. | Substrate processing apparatus with bottom-mounted remote plasma system |
US5812403A (en) | 1996-11-13 | 1998-09-22 | Applied Materials, Inc. | Methods and apparatus for cleaning surfaces in a substrate processing system |
US5882786A (en) | 1996-11-15 | 1999-03-16 | C3, Inc. | Gemstones formed of silicon carbide with diamond coating |
US5855681A (en) | 1996-11-18 | 1999-01-05 | Applied Materials, Inc. | Ultra high throughput wafer vacuum processing system |
US6152070A (en) | 1996-11-18 | 2000-11-28 | Applied Materials, Inc. | Tandem process chamber |
US5830805A (en) | 1996-11-18 | 1998-11-03 | Cornell Research Foundation | Electroless deposition equipment or apparatus and method of performing electroless deposition |
US5844195A (en) | 1996-11-18 | 1998-12-01 | Applied Materials, Inc. | Remote plasma source |
US5695810A (en) | 1996-11-20 | 1997-12-09 | Cornell Research Foundation, Inc. | Use of cobalt tungsten phosphide as a barrier material for copper metallization |
FR2756663B1 (fr) | 1996-12-04 | 1999-02-26 | Berenguer Marc | Procede de traitement d'un substrat semi-conducteur comprenant une etape de traitement de surface |
US5843538A (en) | 1996-12-09 | 1998-12-01 | John L. Raymond | Method for electroless nickel plating of metal substrates |
US5953635A (en) | 1996-12-19 | 1999-09-14 | Intel Corporation | Interlayer dielectric with a composite dielectric stack |
US5913140A (en) | 1996-12-23 | 1999-06-15 | Lam Research Corporation | Method for reduction of plasma charging damage during chemical vapor deposition |
DE19700231C2 (de) | 1997-01-07 | 2001-10-04 | Geesthacht Gkss Forschung | Vorrichtung zum Filtern und Trennen von Strömungsmedien |
US5913147A (en) | 1997-01-21 | 1999-06-15 | Advanced Micro Devices, Inc. | Method for fabricating copper-aluminum metallization |
US5882424A (en) | 1997-01-21 | 1999-03-16 | Applied Materials, Inc. | Plasma cleaning of a CVD or etch reactor using a low or mixed frequency excitation field |
JPH10223608A (ja) | 1997-02-04 | 1998-08-21 | Sony Corp | 半導体装置の製造方法 |
US5800621A (en) | 1997-02-10 | 1998-09-01 | Applied Materials, Inc. | Plasma source for HDP-CVD chamber |
US6035101A (en) | 1997-02-12 | 2000-03-07 | Applied Materials, Inc. | High temperature multi-layered alloy heater assembly and related methods |
US6013584A (en) | 1997-02-19 | 2000-01-11 | Applied Materials, Inc. | Methods and apparatus for forming HDP-CVD PSG film used for advanced pre-metal dielectric layer applications |
US6479373B2 (en) | 1997-02-20 | 2002-11-12 | Infineon Technologies Ag | Method of structuring layers with a polysilicon layer and an overlying metal or metal silicide layer using a three step etching process with fluorine, chlorine, bromine containing gases |
US6190233B1 (en) | 1997-02-20 | 2001-02-20 | Applied Materials, Inc. | Method and apparatus for improving gap-fill capability using chemical and physical etchbacks |
US5990000A (en) | 1997-02-20 | 1999-11-23 | Applied Materials, Inc. | Method and apparatus for improving gap-fill capability using chemical and physical etchbacks |
US6059643A (en) | 1997-02-21 | 2000-05-09 | Aplex, Inc. | Apparatus and method for polishing a flat surface using a belted polishing pad |
US5789300A (en) | 1997-02-25 | 1998-08-04 | Advanced Micro Devices, Inc. | Method of making IGFETs in densely and sparsely populated areas of a substrate |
US5850105A (en) | 1997-03-21 | 1998-12-15 | Advanced Micro Devices, Inc. | Substantially planar semiconductor topography using dielectrics and chemical mechanical polish |
US5786276A (en) | 1997-03-31 | 1998-07-28 | Applied Materials, Inc. | Selective plasma etching of silicon nitride in presence of silicon or silicon oxides using mixture of CH3F or CH2F2 and CF4 and O2 |
US6030666A (en) | 1997-03-31 | 2000-02-29 | Lam Research Corporation | Method for microwave plasma substrate heating |
US5968610A (en) | 1997-04-02 | 1999-10-19 | United Microelectronics Corp. | Multi-step high density plasma chemical vapor deposition process |
JPH10284360A (ja) | 1997-04-02 | 1998-10-23 | Hitachi Ltd | 基板温度制御装置及び方法 |
US6149828A (en) | 1997-05-05 | 2000-11-21 | Micron Technology, Inc. | Supercritical etching compositions and method of using same |
US6204200B1 (en) | 1997-05-05 | 2001-03-20 | Texas Instruments Incorporated | Process scheme to form controlled airgaps between interconnect lines to reduce capacitance |
US5969422A (en) | 1997-05-15 | 1999-10-19 | Advanced Micro Devices, Inc. | Plated copper interconnect structure |
US6083344A (en) | 1997-05-29 | 2000-07-04 | Applied Materials, Inc. | Multi-zone RF inductively coupled source configuration |
US6189483B1 (en) | 1997-05-29 | 2001-02-20 | Applied Materials, Inc. | Process kit |
US5838055A (en) | 1997-05-29 | 1998-11-17 | International Business Machines Corporation | Trench sidewall patterned by vapor phase etching |
US6136685A (en) | 1997-06-03 | 2000-10-24 | Applied Materials, Inc. | High deposition rate recipe for low dielectric constant films |
US5937323A (en) | 1997-06-03 | 1999-08-10 | Applied Materials, Inc. | Sequencing of the recipe steps for the optimal low-k HDP-CVD processing |
US6706334B1 (en) | 1997-06-04 | 2004-03-16 | Tokyo Electron Limited | Processing method and apparatus for removing oxide film |
US5872058A (en) | 1997-06-17 | 1999-02-16 | Novellus Systems, Inc. | High aspect ratio gapfill process by using HDP |
US5885749A (en) | 1997-06-20 | 1999-03-23 | Clear Logic, Inc. | Method of customizing integrated circuits by selective secondary deposition of layer interconnect material |
US5933757A (en) | 1997-06-23 | 1999-08-03 | Lsi Logic Corporation | Etch process selective to cobalt silicide for formation of integrated circuit structures |
US6150628A (en) | 1997-06-26 | 2000-11-21 | Applied Science And Technology, Inc. | Toroidal low-field reactive gas source |
US6518155B1 (en) | 1997-06-30 | 2003-02-11 | Intel Corporation | Device structure and method for reducing silicide encroachment |
US6364957B1 (en) | 1997-10-09 | 2002-04-02 | Applied Materials, Inc. | Support assembly with thermal expansion compensation |
JP3874911B2 (ja) | 1997-10-15 | 2007-01-31 | 株式会社Neomaxマテリアル | 微小プラスチック球へのめっき方法 |
GB9722028D0 (en) | 1997-10-17 | 1997-12-17 | Shipley Company Ll C | Plating of polymers |
US6379575B1 (en) | 1997-10-21 | 2002-04-30 | Applied Materials, Inc. | Treatment of etching chambers using activated cleaning gas |
US6136693A (en) | 1997-10-27 | 2000-10-24 | Chartered Semiconductor Manufacturing Ltd. | Method for planarized interconnect vias using electroless plating and CMP |
US6013191A (en) | 1997-10-27 | 2000-01-11 | Advanced Refractory Technologies, Inc. | Method of polishing CVD diamond films by oxygen plasma |
US6379576B2 (en) | 1997-11-17 | 2002-04-30 | Mattson Technology, Inc. | Systems and methods for variable mode plasma enhanced processing of semiconductor wafers |
US6063712A (en) | 1997-11-25 | 2000-05-16 | Micron Technology, Inc. | Oxide etch and method of etching |
US5849639A (en) | 1997-11-26 | 1998-12-15 | Lucent Technologies Inc. | Method for removing etching residues and contaminants |
US6077780A (en) | 1997-12-03 | 2000-06-20 | Advanced Micro Devices, Inc. | Method for filling high aspect ratio openings of an integrated circuit to minimize electromigration failure |
US6143476A (en) | 1997-12-12 | 2000-11-07 | Applied Materials Inc | Method for high temperature etching of patterned layers using an organic mask stack |
US5976327A (en) | 1997-12-12 | 1999-11-02 | Applied Materials, Inc. | Step coverage and overhang improvement by pedestal bias voltage modulation |
US6083844A (en) | 1997-12-22 | 2000-07-04 | Lam Research Corporation | Techniques for etching an oxide layer |
US6406759B1 (en) | 1998-01-08 | 2002-06-18 | The University Of Tennessee Research Corporation | Remote exposure of workpieces using a recirculated plasma |
JPH11204442A (ja) | 1998-01-12 | 1999-07-30 | Tokyo Electron Ltd | 枚葉式の熱処理装置 |
US6140234A (en) | 1998-01-20 | 2000-10-31 | International Business Machines Corporation | Method to selectively fill recesses with conductive metal |
US5932077A (en) | 1998-02-09 | 1999-08-03 | Reynolds Tech Fabricators, Inc. | Plating cell with horizontal product load mechanism |
US6635578B1 (en) | 1998-02-09 | 2003-10-21 | Applied Materials, Inc | Method of operating a dual chamber reactor with neutral density decoupled from ion density |
US6054379A (en) | 1998-02-11 | 2000-04-25 | Applied Materials, Inc. | Method of depositing a low k dielectric with organo silane |
US6340435B1 (en) | 1998-02-11 | 2002-01-22 | Applied Materials, Inc. | Integrated low K dielectrics and etch stops |
US6627532B1 (en) | 1998-02-11 | 2003-09-30 | Applied Materials, Inc. | Method of decreasing the K value in SiOC layer deposited by chemical vapor deposition |
US6197688B1 (en) | 1998-02-12 | 2001-03-06 | Motorola Inc. | Interconnect structure in a semiconductor device and method of formation |
US6171661B1 (en) | 1998-02-25 | 2001-01-09 | Applied Materials, Inc. | Deposition of copper with increased adhesion |
JP4151862B2 (ja) | 1998-02-26 | 2008-09-17 | キヤノンアネルバ株式会社 | Cvd装置 |
US6892669B2 (en) | 1998-02-26 | 2005-05-17 | Anelva Corporation | CVD apparatus |
US6551939B2 (en) | 1998-03-17 | 2003-04-22 | Anneal Corporation | Plasma surface treatment method and resulting device |
US5920792A (en) | 1998-03-19 | 1999-07-06 | Winbond Electronics Corp | High density plasma enhanced chemical vapor deposition process in combination with chemical mechanical polishing process for preparation and planarization of intemetal dielectric layers |
US6197181B1 (en) | 1998-03-20 | 2001-03-06 | Semitool, Inc. | Apparatus and method for electrolytically depositing a metal on a microelectronic workpiece |
US6194038B1 (en) | 1998-03-20 | 2001-02-27 | Applied Materials, Inc. | Method for deposition of a conformal layer on a substrate |
US6565729B2 (en) | 1998-03-20 | 2003-05-20 | Semitool, Inc. | Method for electrochemically depositing metal on a semiconductor workpiece |
US6602434B1 (en) | 1998-03-27 | 2003-08-05 | Applied Materials, Inc. | Process for etching oxide using hexafluorobutadiene or related fluorocarbons and manifesting a wide process window |
US6203657B1 (en) * | 1998-03-31 | 2001-03-20 | Lam Research Corporation | Inductively coupled plasma downstream strip module |
US6395150B1 (en) | 1998-04-01 | 2002-05-28 | Novellus Systems, Inc. | Very high aspect ratio gapfill using HDP |
EP1070346A1 (en) | 1998-04-02 | 2001-01-24 | Applied Materials, Inc. | Method for etching low k dielectrics |
US6117245A (en) | 1998-04-08 | 2000-09-12 | Applied Materials, Inc. | Method and apparatus for controlling cooling and heating fluids for a gas distribution plate |
US6113771A (en) | 1998-04-21 | 2000-09-05 | Applied Materials, Inc. | Electro deposition chemistry |
US6416647B1 (en) | 1998-04-21 | 2002-07-09 | Applied Materials, Inc. | Electro-chemical deposition cell for face-up processing of single semiconductor substrates |
US6179924B1 (en) | 1998-04-28 | 2001-01-30 | Applied Materials, Inc. | Heater for use in substrate processing apparatus to deposit tungsten |
US6093594A (en) | 1998-04-29 | 2000-07-25 | Advanced Micro Devices, Inc. | CMOS optimization method utilizing sacrificial sidewall spacer |
US6030881A (en) | 1998-05-05 | 2000-02-29 | Novellus Systems, Inc. | High throughput chemical vapor deposition process capable of filling high aspect ratio structures |
EP0959496B1 (en) | 1998-05-22 | 2006-07-19 | Applied Materials, Inc. | Methods for forming self-planarized dielectric layer for shallow trench isolation |
US6086677A (en) | 1998-06-16 | 2000-07-11 | Applied Materials, Inc. | Dual gas faceplate for a showerhead in a semiconductor wafer processing system |
KR100296137B1 (ko) | 1998-06-16 | 2001-08-07 | 박종섭 | 보호막으로서고밀도플라즈마화학기상증착에의한절연막을갖는반도체소자제조방법 |
JP2000012514A (ja) | 1998-06-19 | 2000-01-14 | Hitachi Ltd | 後処理方法 |
US6147009A (en) | 1998-06-29 | 2000-11-14 | International Business Machines Corporation | Hydrogenated oxidized silicon carbon material |
WO2000005747A2 (en) | 1998-06-30 | 2000-02-03 | Semitool, Inc. | Metallization structures for microelectronic applications and process for forming the structures |
US6562128B1 (en) | 2001-11-28 | 2003-05-13 | Seh America, Inc. | In-situ post epitaxial treatment process |
US6037018A (en) | 1998-07-01 | 2000-03-14 | Taiwan Semiconductor Maufacturing Company | Shallow trench isolation filled by high density plasma chemical vapor deposition |
US6248429B1 (en) | 1998-07-06 | 2001-06-19 | Micron Technology, Inc. | Metallized recess in a substrate |
KR100265866B1 (ko) | 1998-07-11 | 2000-12-01 | 황철주 | 반도체 제조장치 |
US6063683A (en) | 1998-07-27 | 2000-05-16 | Acer Semiconductor Manufacturing, Inc. | Method of fabricating a self-aligned crown-shaped capacitor for high density DRAM cells |
US6436816B1 (en) | 1998-07-31 | 2002-08-20 | Industrial Technology Research Institute | Method of electroless plating copper on nitride barrier |
US6074954A (en) | 1998-08-31 | 2000-06-13 | Applied Materials, Inc | Process for control of the shape of the etch front in the etching of polysilicon |
US6383951B1 (en) | 1998-09-03 | 2002-05-07 | Micron Technology, Inc. | Low dielectric constant material for integrated circuit fabrication |
US6440863B1 (en) | 1998-09-04 | 2002-08-27 | Taiwan Semiconductor Manufacturing Company | Plasma etch method for forming patterned oxygen containing plasma etchable layer |
US6165912A (en) | 1998-09-17 | 2000-12-26 | Cfmt, Inc. | Electroless metal deposition of electronic components in an enclosable vessel |
US6037266A (en) | 1998-09-28 | 2000-03-14 | Taiwan Semiconductor Manufacturing Company | Method for patterning a polysilicon gate with a thin gate oxide in a polysilicon etcher |
JP3725708B2 (ja) | 1998-09-29 | 2005-12-14 | 株式会社東芝 | 半導体装置 |
US6277733B1 (en) | 1998-10-05 | 2001-08-21 | Texas Instruments Incorporated | Oxygen-free, dry plasma process for polymer removal |
US6180523B1 (en) | 1998-10-13 | 2001-01-30 | Industrial Technology Research Institute | Copper metallization of USLI by electroless process |
US6228758B1 (en) | 1998-10-14 | 2001-05-08 | Advanced Micro Devices, Inc. | Method of making dual damascene conductive interconnections and integrated circuit device comprising same |
US6251802B1 (en) | 1998-10-19 | 2001-06-26 | Micron Technology, Inc. | Methods of forming carbon-containing layers |
US6107199A (en) | 1998-10-24 | 2000-08-22 | International Business Machines Corporation | Method for improving the morphology of refractory metal thin films |
JP3064268B2 (ja) | 1998-10-29 | 2000-07-12 | アプライド マテリアルズ インコーポレイテッド | 成膜方法及び装置 |
US6176198B1 (en) | 1998-11-02 | 2001-01-23 | Applied Materials, Inc. | Apparatus and method for depositing low K dielectric materials |
US6462371B1 (en) | 1998-11-24 | 2002-10-08 | Micron Technology Inc. | Films doped with carbon for use in integrated circuit technology |
US6203863B1 (en) | 1998-11-27 | 2001-03-20 | United Microelectronics Corp. | Method of gap filling |
US6228233B1 (en) | 1998-11-30 | 2001-05-08 | Applied Materials, Inc. | Inflatable compliant bladder assembly |
US6251236B1 (en) | 1998-11-30 | 2001-06-26 | Applied Materials, Inc. | Cathode contact ring for electrochemical deposition |
US6258220B1 (en) | 1998-11-30 | 2001-07-10 | Applied Materials, Inc. | Electro-chemical deposition system |
US6015747A (en) | 1998-12-07 | 2000-01-18 | Advanced Micro Device | Method of metal/polysilicon gate formation in a field effect transistor |
US6242349B1 (en) | 1998-12-09 | 2001-06-05 | Advanced Micro Devices, Inc. | Method of forming copper/copper alloy interconnection with reduced electromigration |
US6364954B2 (en) | 1998-12-14 | 2002-04-02 | Applied Materials, Inc. | High temperature chemical vapor deposition chamber |
EP1014434B1 (de) | 1998-12-24 | 2008-03-26 | ATMEL Germany GmbH | Verfahren zum anisotropen plasmachemischen Trockenätzen von Siliziumnitrid-Schichten mittels eines Fluor-enthaltenden Gasgemisches |
KR20000044928A (ko) | 1998-12-30 | 2000-07-15 | 김영환 | 반도체 소자의 트랜치 형성 방법 |
DE19901210A1 (de) | 1999-01-14 | 2000-07-27 | Siemens Ag | Halbleiterbauelement und Verfahren zu dessen Herstellung |
US6499425B1 (en) | 1999-01-22 | 2002-12-31 | Micron Technology, Inc. | Quasi-remote plasma processing method and apparatus |
TW428256B (en) | 1999-01-25 | 2001-04-01 | United Microelectronics Corp | Structure of conducting-wire layer and its fabricating method |
JP3330554B2 (ja) | 1999-01-27 | 2002-09-30 | 松下電器産業株式会社 | エッチング方法 |
US6245669B1 (en) | 1999-02-05 | 2001-06-12 | Taiwan Semiconductor Manufacturing Company | High selectivity Si-rich SiON etch-stop layer |
US6010962A (en) | 1999-02-12 | 2000-01-04 | Taiwan Semiconductor Manufacturing Company | Copper chemical-mechanical-polishing (CMP) dishing |
US6245670B1 (en) | 1999-02-19 | 2001-06-12 | Advanced Micro Devices, Inc. | Method for filling a dual damascene opening having high aspect ratio to minimize electromigration failure |
US6291282B1 (en) | 1999-02-26 | 2001-09-18 | Texas Instruments Incorporated | Method of forming dual metal gate structures or CMOS devices |
US6136163A (en) | 1999-03-05 | 2000-10-24 | Applied Materials, Inc. | Apparatus for electro-chemical deposition with thermal anneal chamber |
US6312995B1 (en) | 1999-03-08 | 2001-11-06 | Advanced Micro Devices, Inc. | MOS transistor with assisted-gates and ultra-shallow “Psuedo” source and drain extensions for ultra-large-scale integration |
US6197705B1 (en) | 1999-03-18 | 2001-03-06 | Chartered Semiconductor Manufacturing Ltd. | Method of silicon oxide and silicon glass films deposition |
US6797189B2 (en) | 1999-03-25 | 2004-09-28 | Hoiman (Raymond) Hung | Enhancement of silicon oxide etch rate and nitride selectivity using hexafluorobutadiene or other heavy perfluorocarbon |
US6144099A (en) | 1999-03-30 | 2000-11-07 | Advanced Micro Devices, Inc. | Semiconductor metalization barrier |
US6238582B1 (en) | 1999-03-30 | 2001-05-29 | Veeco Instruments, Inc. | Reactive ion beam etching method and a thin film head fabricated using the method |
US6099697A (en) | 1999-04-13 | 2000-08-08 | Applied Materials, Inc. | Method of and apparatus for restoring a support surface in a semiconductor wafer processing system |
US6110836A (en) | 1999-04-22 | 2000-08-29 | Applied Materials, Inc. | Reactive plasma etch cleaning of high aspect ratio openings |
US6541671B1 (en) | 2002-02-13 | 2003-04-01 | The Regents Of The University Of California | Synthesis of 2H- and 13C-substituted dithanes |
JP3099066B1 (ja) | 1999-05-07 | 2000-10-16 | 東京工業大学長 | 薄膜構造体の製造方法 |
US6323128B1 (en) | 1999-05-26 | 2001-11-27 | International Business Machines Corporation | Method for forming Co-W-P-Au films |
JP3320685B2 (ja) | 1999-06-02 | 2002-09-03 | 株式会社半導体先端テクノロジーズ | 微細パターン形成方法 |
US20020033233A1 (en) | 1999-06-08 | 2002-03-21 | Stephen E. Savas | Icp reactor having a conically-shaped plasma-generating section |
US6174812B1 (en) | 1999-06-08 | 2001-01-16 | United Microelectronics Corp. | Copper damascene technology for ultra large scale integration circuits |
US6821571B2 (en) | 1999-06-18 | 2004-11-23 | Applied Materials Inc. | Plasma treatment to enhance adhesion and to minimize oxidation of carbon-containing layers |
US6110530A (en) | 1999-06-25 | 2000-08-29 | Applied Materials, Inc. | CVD method of depositing copper films by using improved organocopper precursor blend |
US6277752B1 (en) | 1999-06-28 | 2001-08-21 | Taiwan Semiconductor Manufacturing Company | Multiple etch method for forming residue free patterned hard mask layer |
US6516815B1 (en) | 1999-07-09 | 2003-02-11 | Applied Materials, Inc. | Edge bead removal/spin rinse dry (EBR/SRD) module |
US6258223B1 (en) | 1999-07-09 | 2001-07-10 | Applied Materials, Inc. | In-situ electroless copper seed layer enhancement in an electroplating system |
US6352081B1 (en) | 1999-07-09 | 2002-03-05 | Applied Materials, Inc. | Method of cleaning a semiconductor device processing chamber after a copper etch process |
US6351013B1 (en) | 1999-07-13 | 2002-02-26 | Advanced Micro Devices, Inc. | Low-K sub spacer pocket formation for gate capacitance reduction |
US6342733B1 (en) | 1999-07-27 | 2002-01-29 | International Business Machines Corporation | Reduced electromigration and stressed induced migration of Cu wires by surface coating |
US6281135B1 (en) | 1999-08-05 | 2001-08-28 | Axcelis Technologies, Inc. | Oxygen free plasma stripping process |
US6235643B1 (en) | 1999-08-10 | 2001-05-22 | Applied Materials, Inc. | Method for etching a trench having rounded top and bottom corners in a silicon substrate |
CN100371491C (zh) | 1999-08-17 | 2008-02-27 | 东京电子株式会社 | 脉冲等离子体处理方法及其设备 |
JP4220075B2 (ja) | 1999-08-20 | 2009-02-04 | 東京エレクトロン株式会社 | 成膜方法および成膜装置 |
US6375748B1 (en) | 1999-09-01 | 2002-04-23 | Applied Materials, Inc. | Method and apparatus for preventing edge deposition |
US6441492B1 (en) | 1999-09-10 | 2002-08-27 | James A. Cunningham | Diffusion barriers for copper interconnect systems |
US6503843B1 (en) | 1999-09-21 | 2003-01-07 | Applied Materials, Inc. | Multistep chamber cleaning and film deposition process using a remote plasma that also enhances film gap fill |
US6432819B1 (en) | 1999-09-27 | 2002-08-13 | Applied Materials, Inc. | Method and apparatus of forming a sputtered doped seed layer |
US6287643B1 (en) | 1999-09-30 | 2001-09-11 | Novellus Systems, Inc. | Apparatus and method for injecting and modifying gas concentration of a meta-stable or atomic species in a downstream plasma reactor |
US6153935A (en) | 1999-09-30 | 2000-11-28 | International Business Machines Corporation | Dual etch stop/diffusion barrier for damascene interconnects |
US6364949B1 (en) | 1999-10-19 | 2002-04-02 | Applied Materials, Inc. | 300 mm CVD chamber design for metal-organic thin film deposition |
KR100338768B1 (ko) | 1999-10-25 | 2002-05-30 | 윤종용 | 산화막 제거방법 및 산화막 제거를 위한 반도체 제조 장치 |
US20010041444A1 (en) | 1999-10-29 | 2001-11-15 | Jeffrey A. Shields | Tin contact barc for tungsten polished contacts |
US6551924B1 (en) | 1999-11-02 | 2003-04-22 | International Business Machines Corporation | Post metalization chem-mech polishing dielectric etch |
KR20010051575A (ko) | 1999-11-09 | 2001-06-25 | 조셉 제이. 스위니 | 살리사이드 처리를 위한 화학적 플라즈마 세정 |
JP3366301B2 (ja) | 1999-11-10 | 2003-01-14 | 日本電気株式会社 | プラズマcvd装置 |
TW484170B (en) | 1999-11-30 | 2002-04-21 | Applied Materials Inc | Integrated modular processing platform |
US6342453B1 (en) | 1999-12-03 | 2002-01-29 | Applied Materials, Inc. | Method for CVD process control for enhancing device performance |
US6277763B1 (en) | 1999-12-16 | 2001-08-21 | Applied Materials, Inc. | Plasma processing of tungsten using a gas mixture comprising a fluorinated gas and oxygen |
WO2001046492A1 (en) | 1999-12-22 | 2001-06-28 | Tokyo Electron Limited | Method and system for reducing damage to substrates during plasma processing with a resonator source |
US6238513B1 (en) | 1999-12-28 | 2001-05-29 | International Business Machines Corporation | Wafer lift assembly |
KR20010058774A (ko) | 1999-12-30 | 2001-07-06 | 박종섭 | 반도체 소자의 제조 방법 |
KR100767762B1 (ko) | 2000-01-18 | 2007-10-17 | 에이에스엠 저펜 가부시기가이샤 | 자가 세정을 위한 원격 플라즈마 소스를 구비한 cvd 반도체 공정장치 |
US6477980B1 (en) | 2000-01-20 | 2002-11-12 | Applied Materials, Inc. | Flexibly suspended gas distribution manifold for plasma chamber |
US6772827B2 (en) | 2000-01-20 | 2004-08-10 | Applied Materials, Inc. | Suspended gas distribution manifold for plasma chamber |
US6656831B1 (en) | 2000-01-26 | 2003-12-02 | Applied Materials, Inc. | Plasma-enhanced chemical vapor deposition of a metal nitride layer |
US6494959B1 (en) | 2000-01-28 | 2002-12-17 | Applied Materials, Inc. | Process and apparatus for cleaning a silicon surface |
JP3723712B2 (ja) | 2000-02-10 | 2005-12-07 | 株式会社日立国際電気 | 基板処理装置及び基板処理方法 |
US6743473B1 (en) | 2000-02-16 | 2004-06-01 | Applied Materials, Inc. | Chemical vapor deposition of barriers from novel precursors |
US6573030B1 (en) | 2000-02-17 | 2003-06-03 | Applied Materials, Inc. | Method for depositing an amorphous carbon layer |
US6319766B1 (en) | 2000-02-22 | 2001-11-20 | Applied Materials, Inc. | Method of tantalum nitride deposition by tantalum oxide densification |
US6350320B1 (en) | 2000-02-22 | 2002-02-26 | Applied Materials, Inc. | Heater for processing chamber |
US6391788B1 (en) | 2000-02-25 | 2002-05-21 | Applied Materials, Inc. | Two etchant etch method |
JP3979791B2 (ja) | 2000-03-08 | 2007-09-19 | 株式会社ルネサステクノロジ | 半導体装置およびその製造方法 |
KR100350056B1 (ko) | 2000-03-09 | 2002-08-24 | 삼성전자 주식회사 | 다마신 게이트 공정에서 자기정렬콘택패드 형성 방법 |
US6527968B1 (en) | 2000-03-27 | 2003-03-04 | Applied Materials Inc. | Two-stage self-cleaning silicon etch process |
JP2003529926A (ja) | 2000-03-30 | 2003-10-07 | 東京エレクトロン株式会社 | プラズマ処理システム内への調整可能なガス注入のための方法及び装置 |
JP2001355074A (ja) | 2000-04-10 | 2001-12-25 | Sony Corp | 無電解メッキ処理方法およびその装置 |
US7892974B2 (en) | 2000-04-11 | 2011-02-22 | Cree, Inc. | Method of forming vias in silicon carbide and resulting devices and circuits |
US6762129B2 (en) | 2000-04-19 | 2004-07-13 | Matsushita Electric Industrial Co., Ltd. | Dry etching method, fabrication method for semiconductor device, and dry etching apparatus |
JP2001308023A (ja) | 2000-04-21 | 2001-11-02 | Tokyo Electron Ltd | 熱処理装置及び方法 |
US6387207B1 (en) | 2000-04-28 | 2002-05-14 | Applied Materials, Inc. | Integration of remote plasma generator with semiconductor processing chamber |
US6458718B1 (en) | 2000-04-28 | 2002-10-01 | Asm Japan K.K. | Fluorine-containing materials and processes |
JP3662472B2 (ja) | 2000-05-09 | 2005-06-22 | エム・エフエスアイ株式会社 | 基板表面の処理方法 |
US6679981B1 (en) | 2000-05-11 | 2004-01-20 | Applied Materials, Inc. | Inductive plasma loop enhancing magnetron sputtering |
US6335261B1 (en) | 2000-05-31 | 2002-01-01 | International Business Machines Corporation | Directional CVD process with optimized etchback |
US6729081B2 (en) | 2000-06-09 | 2004-05-04 | United Solar Systems Corporation | Self-adhesive photovoltaic module |
US6603269B1 (en) | 2000-06-13 | 2003-08-05 | Applied Materials, Inc. | Resonant chamber applicator for remote plasma source |
US6391753B1 (en) | 2000-06-20 | 2002-05-21 | Advanced Micro Devices, Inc. | Process for forming gate conductors |
US6645550B1 (en) | 2000-06-22 | 2003-11-11 | Applied Materials, Inc. | Method of treating a substrate |
US6427623B2 (en) | 2000-06-23 | 2002-08-06 | Anelva Corporation | Chemical vapor deposition system |
US6620723B1 (en) | 2000-06-27 | 2003-09-16 | Applied Materials, Inc. | Formation of boride barrier layers using chemisorption techniques |
JP4371543B2 (ja) | 2000-06-29 | 2009-11-25 | 日本電気株式会社 | リモートプラズマcvd装置及び膜形成方法 |
US6303418B1 (en) | 2000-06-30 | 2001-10-16 | Chartered Semiconductor Manufacturing Ltd. | Method of fabricating CMOS devices featuring dual gate structures and a high dielectric constant gate insulator layer |
US6440870B1 (en) | 2000-07-12 | 2002-08-27 | Applied Materials, Inc. | Method of etching tungsten or tungsten nitride electrode gates in semiconductor structures |
US6794311B2 (en) | 2000-07-14 | 2004-09-21 | Applied Materials Inc. | Method and apparatus for treating low k dielectric layers to reduce diffusion |
KR100366623B1 (ko) | 2000-07-18 | 2003-01-09 | 삼성전자 주식회사 | 반도체 기판 또는 lcd 기판의 세정방법 |
US6764958B1 (en) | 2000-07-28 | 2004-07-20 | Applied Materials Inc. | Method of depositing dielectric films |
US6677242B1 (en) | 2000-08-12 | 2004-01-13 | Applied Materials Inc. | Integrated shallow trench isolation approach |
US6800830B2 (en) | 2000-08-18 | 2004-10-05 | Hitachi Kokusai Electric, Inc. | Chemistry for boron diffusion barrier layer and method of application in semiconductor device fabrication |
US6446572B1 (en) | 2000-08-18 | 2002-09-10 | Tokyo Electron Limited | Embedded plasma source for plasma density improvement |
US6335288B1 (en) | 2000-08-24 | 2002-01-01 | Applied Materials, Inc. | Gas chemistry cycling to achieve high aspect ratio gapfill with HDP-CVD |
US6372657B1 (en) | 2000-08-31 | 2002-04-16 | Micron Technology, Inc. | Method for selective etching of oxides |
US6465366B1 (en) | 2000-09-12 | 2002-10-15 | Applied Materials, Inc. | Dual frequency plasma enhanced chemical vapor deposition of silicon carbide layers |
JP2002100578A (ja) | 2000-09-25 | 2002-04-05 | Crystage Co Ltd | 薄膜形成装置 |
US6461974B1 (en) | 2000-10-06 | 2002-10-08 | Lam Research Corporation | High temperature tungsten etching process |
KR100375102B1 (ko) | 2000-10-18 | 2003-03-08 | 삼성전자주식회사 | 반도체 장치의 제조에서 화학 기상 증착 방법 및 이를수행하기 위한 장치 |
US6403491B1 (en) | 2000-11-01 | 2002-06-11 | Applied Materials, Inc. | Etch method using a dielectric etch chamber with expanded process window |
US6610362B1 (en) | 2000-11-20 | 2003-08-26 | Intel Corporation | Method of forming a carbon doped oxide layer on a substrate |
KR100382725B1 (ko) | 2000-11-24 | 2003-05-09 | 삼성전자주식회사 | 클러스터화된 플라즈마 장치에서의 반도체소자의 제조방법 |
AUPR179500A0 (en) | 2000-11-30 | 2000-12-21 | Saintech Pty Limited | Ion source |
US6291348B1 (en) | 2000-11-30 | 2001-09-18 | Advanced Micro Devices, Inc. | Method of forming Cu-Ca-O thin films on Cu surfaces in a chemical solution and semiconductor device thereby formed |
US6544340B2 (en) | 2000-12-08 | 2003-04-08 | Applied Materials, Inc. | Heater with detachable ceramic top plate |
US6448537B1 (en) | 2000-12-11 | 2002-09-10 | Eric Anton Nering | Single-wafer process chamber thermal convection processes |
US20020124867A1 (en) | 2001-01-08 | 2002-09-12 | Apl Co., Ltd. | Apparatus and method for surface cleaning using plasma |
US6879981B2 (en) | 2001-01-16 | 2005-04-12 | Corigin Ltd. | Sharing live data with a non cooperative DBMS |
JP4644943B2 (ja) | 2001-01-23 | 2011-03-09 | 東京エレクトロン株式会社 | 処理装置 |
US6743732B1 (en) | 2001-01-26 | 2004-06-01 | Taiwan Semiconductor Manufacturing Company | Organic low K dielectric etch with NH3 chemistry |
JP2002222934A (ja) | 2001-01-29 | 2002-08-09 | Nec Corp | 半導体装置およびその製造方法 |
US6893969B2 (en) | 2001-02-12 | 2005-05-17 | Lam Research Corporation | Use of ammonia for etching organic low-k dielectrics |
US6537733B2 (en) | 2001-02-23 | 2003-03-25 | Applied Materials, Inc. | Method of depositing low dielectric constant silicon carbide layers |
JP2002256235A (ja) | 2001-03-01 | 2002-09-11 | Hitachi Chem Co Ltd | 接着シート、半導体装置の製造方法および半導体装置 |
US6878206B2 (en) | 2001-07-16 | 2005-04-12 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
US6886491B2 (en) | 2001-03-19 | 2005-05-03 | Apex Co. Ltd. | Plasma chemical vapor deposition apparatus |
JP5013353B2 (ja) | 2001-03-28 | 2012-08-29 | 隆 杉野 | 成膜方法及び成膜装置 |
US6670278B2 (en) | 2001-03-30 | 2003-12-30 | Lam Research Corporation | Method of plasma etching of silicon carbide |
US7084070B1 (en) | 2001-03-30 | 2006-08-01 | Lam Research Corporation | Treatment for corrosion in substrate processing |
US20020177321A1 (en) | 2001-03-30 | 2002-11-28 | Li Si Yi | Plasma etching of silicon carbide |
JP3707394B2 (ja) | 2001-04-06 | 2005-10-19 | ソニー株式会社 | 無電解メッキ方法 |
US20030019428A1 (en) | 2001-04-28 | 2003-01-30 | Applied Materials, Inc. | Chemical vapor deposition chamber |
US6740601B2 (en) | 2001-05-11 | 2004-05-25 | Applied Materials Inc. | HDP-CVD deposition process for filling high aspect ratio gaps |
US20020197823A1 (en) | 2001-05-18 | 2002-12-26 | Yoo Jae-Yoon | Isolation method for semiconductor device |
JP4720019B2 (ja) | 2001-05-18 | 2011-07-13 | 東京エレクトロン株式会社 | 冷却機構及び処理装置 |
US6717189B2 (en) | 2001-06-01 | 2004-04-06 | Ebara Corporation | Electroless plating liquid and semiconductor device |
JP2004533123A (ja) | 2001-06-14 | 2004-10-28 | マトソン テクノロジー インコーポレーテッド | 銅接続用の障壁エンハンスメント工程 |
US6506291B2 (en) | 2001-06-14 | 2003-01-14 | Applied Materials, Inc. | Substrate support with multilevel heat transfer mechanism |
US6573606B2 (en) | 2001-06-14 | 2003-06-03 | International Business Machines Corporation | Chip to wiring interface with single metal alloy layer applied to surface of copper interconnect |
US20060191637A1 (en) | 2001-06-21 | 2006-08-31 | John Zajac | Etching Apparatus and Process with Thickness and Uniformity Control |
JP2003019433A (ja) | 2001-07-06 | 2003-01-21 | Sekisui Chem Co Ltd | 放電プラズマ処理装置及びそれを用いた処理方法 |
KR100403630B1 (ko) | 2001-07-07 | 2003-10-30 | 삼성전자주식회사 | 고밀도 플라즈마를 이용한 반도체 장치의 층간 절연막 형성방법 |
US6531377B2 (en) | 2001-07-13 | 2003-03-11 | Infineon Technologies Ag | Method for high aspect ratio gap fill using sequential HDP-CVD |
US20030029715A1 (en) | 2001-07-25 | 2003-02-13 | Applied Materials, Inc. | An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems |
US6846745B1 (en) | 2001-08-03 | 2005-01-25 | Novellus Systems, Inc. | High-density plasma process for filling high aspect ratio structures |
US6596654B1 (en) | 2001-08-24 | 2003-07-22 | Novellus Systems, Inc. | Gap fill for high aspect ratio structures |
JP3914452B2 (ja) | 2001-08-07 | 2007-05-16 | 株式会社ルネサステクノロジ | 半導体集積回路装置の製造方法 |
TW554069B (en) | 2001-08-10 | 2003-09-21 | Ebara Corp | Plating device and method |
KR20040018558A (ko) | 2001-08-13 | 2004-03-03 | 가부시키 가이샤 에바라 세이사꾸쇼 | 반도체장치와 그 제조방법 및 도금액 |
JP2003059914A (ja) | 2001-08-21 | 2003-02-28 | Hitachi Kokusai Electric Inc | プラズマ処理装置 |
US20030038305A1 (en) | 2001-08-21 | 2003-02-27 | Wasshuber Christoph A. | Method for manufacturing and structure of transistor with low-k spacer |
US6762127B2 (en) | 2001-08-23 | 2004-07-13 | Yves Pierre Boiteux | Etch process for dielectric materials comprising oxidized organo silane materials |
US6753506B2 (en) | 2001-08-23 | 2004-06-22 | Axcelis Technologies | System and method of fast ambient switching for rapid thermal processing |
WO2003018867A1 (en) | 2001-08-29 | 2003-03-06 | Applied Materials, Inc. | Semiconductor processing using an efficiently coupled gas source |
US6796314B1 (en) | 2001-09-07 | 2004-09-28 | Novellus Systems, Inc. | Using hydrogen gas in a post-etch radio frequency-plasma contact cleaning process |
US6656837B2 (en) | 2001-10-11 | 2003-12-02 | Applied Materials, Inc. | Method of eliminating photoresist poisoning in damascene applications |
AU2002301252B2 (en) | 2001-10-12 | 2007-12-20 | Bayer Aktiengesellschaft | Photovoltaic modules with a thermoplastic hot-melt adhesive layer and a process for their production |
US20030072639A1 (en) | 2001-10-17 | 2003-04-17 | Applied Materials, Inc. | Substrate support |
JP3759895B2 (ja) | 2001-10-24 | 2006-03-29 | 松下電器産業株式会社 | エッチング方法 |
US7780785B2 (en) | 2001-10-26 | 2010-08-24 | Applied Materials, Inc. | Gas delivery apparatus for atomic layer deposition |
US6916398B2 (en) | 2001-10-26 | 2005-07-12 | Applied Materials, Inc. | Gas delivery apparatus and method for atomic layer deposition |
KR100443121B1 (ko) | 2001-11-29 | 2004-08-04 | 삼성전자주식회사 | 반도체 공정의 수행 방법 및 반도체 공정 장치 |
US6794290B1 (en) | 2001-12-03 | 2004-09-21 | Novellus Systems, Inc. | Method of chemical modification of structure topography |
US6905968B2 (en) | 2001-12-12 | 2005-06-14 | Applied Materials, Inc. | Process for selectively etching dielectric layers |
AU2002353145A1 (en) | 2001-12-13 | 2003-06-30 | Applied Materials, Inc. | Self-aligned contact etch with high sensitivity to nitride shoulder |
US6890850B2 (en) | 2001-12-14 | 2005-05-10 | Applied Materials, Inc. | Method of depositing dielectric materials in damascene applications |
US6605874B2 (en) | 2001-12-19 | 2003-08-12 | Intel Corporation | Method of making semiconductor device using an interconnect |
US20030116087A1 (en) | 2001-12-21 | 2003-06-26 | Nguyen Anh N. | Chamber hardware design for titanium nitride atomic layer deposition |
US20030116439A1 (en) | 2001-12-21 | 2003-06-26 | International Business Machines Corporation | Method for forming encapsulated metal interconnect structures in semiconductor integrated circuit devices |
KR100442167B1 (ko) * | 2001-12-26 | 2004-07-30 | 주성엔지니어링(주) | 자연산화막 제거방법 |
US20030124842A1 (en) | 2001-12-27 | 2003-07-03 | Applied Materials, Inc. | Dual-gas delivery system for chemical vapor deposition processes |
KR100484258B1 (ko) | 2001-12-27 | 2005-04-22 | 주식회사 하이닉스반도체 | 반도체 소자 제조 방법 |
US6677247B2 (en) | 2002-01-07 | 2004-01-13 | Applied Materials Inc. | Method of increasing the etch selectivity of a contact sidewall to a preclean etchant |
US6827815B2 (en) | 2002-01-15 | 2004-12-07 | Applied Materials, Inc. | Showerhead assembly for a processing chamber |
JP2003217898A (ja) | 2002-01-16 | 2003-07-31 | Sekisui Chem Co Ltd | 放電プラズマ処理装置 |
US6869880B2 (en) | 2002-01-24 | 2005-03-22 | Applied Materials, Inc. | In situ application of etch back for improved deposition into high-aspect-ratio features |
US6866746B2 (en) | 2002-01-26 | 2005-03-15 | Applied Materials, Inc. | Clamshell and small volume chamber with fixed substrate support |
US7138014B2 (en) | 2002-01-28 | 2006-11-21 | Applied Materials, Inc. | Electroless deposition apparatus |
US6632325B2 (en) | 2002-02-07 | 2003-10-14 | Applied Materials, Inc. | Article for use in a semiconductor processing chamber and method of fabricating same |
US7256370B2 (en) | 2002-03-15 | 2007-08-14 | Steed Technology, Inc. | Vacuum thermal annealer |
US6913651B2 (en) | 2002-03-22 | 2005-07-05 | Blue29, Llc | Apparatus and method for electroless deposition of materials on semiconductor substrates |
US6541397B1 (en) | 2002-03-29 | 2003-04-01 | Applied Materials, Inc. | Removable amorphous carbon CMP stop |
US6843858B2 (en) | 2002-04-02 | 2005-01-18 | Applied Materials, Inc. | Method of cleaning a semiconductor processing chamber |
US20030190426A1 (en) | 2002-04-03 | 2003-10-09 | Deenesh Padhi | Electroless deposition method |
US6921556B2 (en) | 2002-04-12 | 2005-07-26 | Asm Japan K.K. | Method of film deposition using single-wafer-processing type CVD |
US6897532B1 (en) | 2002-04-15 | 2005-05-24 | Cypress Semiconductor Corp. | Magnetic tunneling junction configuration and a method for making the same |
US6616967B1 (en) | 2002-04-15 | 2003-09-09 | Texas Instruments Incorporated | Method to achieve continuous hydrogen saturation in sparingly used electroless nickel plating process |
US7013834B2 (en) | 2002-04-19 | 2006-03-21 | Nordson Corporation | Plasma treatment system |
KR100448714B1 (ko) | 2002-04-24 | 2004-09-13 | 삼성전자주식회사 | 다층 나노라미네이트 구조를 갖는 반도체 장치의 절연막및 그의 형성방법 |
US6528409B1 (en) | 2002-04-29 | 2003-03-04 | Advanced Micro Devices, Inc. | Interconnect structure formed in porous dielectric material with minimized degradation and electromigration |
US6908862B2 (en) | 2002-05-03 | 2005-06-21 | Applied Materials, Inc. | HDP-CVD dep/etch/dep process for improved deposition into high aspect ratio features |
JP2003347278A (ja) | 2002-05-23 | 2003-12-05 | Hitachi Kokusai Electric Inc | 基板処理装置、及び半導体装置の製造方法 |
US6500728B1 (en) | 2002-05-24 | 2002-12-31 | Taiwan Semiconductor Manufacturing Company | Shallow trench isolation (STI) module to improve contact etch process window |
US20030224217A1 (en) | 2002-05-31 | 2003-12-04 | Applied Materials, Inc. | Metal nitride formation |
KR100434110B1 (ko) | 2002-06-04 | 2004-06-04 | 삼성전자주식회사 | 반도체 장치의 제조방법 |
US6924191B2 (en) | 2002-06-20 | 2005-08-02 | Applied Materials, Inc. | Method for fabricating a gate structure of a field effect transistor |
WO2004006303A2 (en) | 2002-07-02 | 2004-01-15 | Applied Materials, Inc. | Method for fabricating an ultra shallow junction of a field effect transistor |
US6767844B2 (en) | 2002-07-03 | 2004-07-27 | Taiwan Semiconductor Manufacturing Co., Ltd | Plasma chamber equipped with temperature-controlled focus ring and method of operating |
US20040033677A1 (en) | 2002-08-14 | 2004-02-19 | Reza Arghavani | Method and apparatus to prevent lateral oxidation in a transistor utilizing an ultra thin oxygen-diffusion barrier |
US6781173B2 (en) | 2002-08-29 | 2004-08-24 | Micron Technology, Inc. | MRAM sense layer area control |
US7223701B2 (en) | 2002-09-06 | 2007-05-29 | Intel Corporation | In-situ sequential high density plasma deposition and etch processing for gap fill |
JP3991315B2 (ja) | 2002-09-17 | 2007-10-17 | キヤノンアネルバ株式会社 | 薄膜形成装置及び方法 |
US7335609B2 (en) | 2004-08-27 | 2008-02-26 | Applied Materials, Inc. | Gap-fill depositions introducing hydroxyl-containing precursors in the formation of silicon containing dielectric materials |
KR100500852B1 (ko) | 2002-10-10 | 2005-07-12 | 최대규 | 원격 플라즈마 발생기 |
US6991959B2 (en) | 2002-10-10 | 2006-01-31 | Asm Japan K.K. | Method of manufacturing silicon carbide film |
JP4606713B2 (ja) | 2002-10-17 | 2011-01-05 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
US6699380B1 (en) | 2002-10-18 | 2004-03-02 | Applied Materials Inc. | Modular electrochemical processing system |
US6802944B2 (en) | 2002-10-23 | 2004-10-12 | Applied Materials, Inc. | High density plasma CVD process for gapfill into high aspect ratio features |
US7628897B2 (en) | 2002-10-23 | 2009-12-08 | Applied Materials, Inc. | Reactive ion etching for semiconductor device feature topography modification |
US6713873B1 (en) | 2002-11-27 | 2004-03-30 | Intel Corporation | Adhesion between dielectric materials |
KR100898580B1 (ko) | 2002-12-07 | 2009-05-20 | 주식회사 하이닉스반도체 | 반도체 소자의 소자분리막 형성방법 |
US6858532B2 (en) | 2002-12-10 | 2005-02-22 | International Business Machines Corporation | Low defect pre-emitter and pre-base oxide etch for bipolar transistors and related tooling |
JP3838969B2 (ja) | 2002-12-17 | 2006-10-25 | 沖電気工業株式会社 | ドライエッチング方法 |
US6720213B1 (en) | 2003-01-15 | 2004-04-13 | International Business Machines Corporation | Low-K gate spacers by fluorine implantation |
US6808748B2 (en) | 2003-01-23 | 2004-10-26 | Applied Materials, Inc. | Hydrogen assisted HDP-CVD deposition process for aggressive gap-fill technology |
US7500445B2 (en) | 2003-01-27 | 2009-03-10 | Applied Materials, Inc. | Method and apparatus for cleaning a CVD chamber |
CN101457338B (zh) | 2003-02-14 | 2011-04-27 | 应用材料股份有限公司 | 利用含氢自由基清洁自生氧化物的方法和设备 |
US6913992B2 (en) | 2003-03-07 | 2005-07-05 | Applied Materials, Inc. | Method of modifying interlayer adhesion |
US20040182315A1 (en) | 2003-03-17 | 2004-09-23 | Tokyo Electron Limited | Reduced maintenance chemical oxide removal (COR) processing system |
US6951821B2 (en) | 2003-03-17 | 2005-10-04 | Tokyo Electron Limited | Processing system and method for chemically treating a substrate |
US7126225B2 (en) | 2003-04-15 | 2006-10-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and method for manufacturing a semiconductor wafer with reduced delamination and peeling |
US6942753B2 (en) | 2003-04-16 | 2005-09-13 | Applied Materials, Inc. | Gas distribution plate assembly for large area plasma enhanced chemical vapor deposition |
US20040211357A1 (en) | 2003-04-24 | 2004-10-28 | Gadgil Pradad N. | Method of manufacturing a gap-filled structure of a semiconductor device |
US6830624B2 (en) | 2003-05-02 | 2004-12-14 | Applied Materials, Inc. | Blocker plate by-pass for remote plasma clean |
US6903511B2 (en) | 2003-05-06 | 2005-06-07 | Zond, Inc. | Generation of uniformly-distributed plasma |
DE10320472A1 (de) | 2003-05-08 | 2004-12-02 | Kolektor D.O.O. | Plasmabehandlung zur Reinigung von Kupfer oder Nickel |
KR20040096365A (ko) | 2003-05-09 | 2004-11-16 | 주식회사 하이닉스반도체 | 반도체소자의 제조방법 |
US7081414B2 (en) | 2003-05-23 | 2006-07-25 | Applied Materials, Inc. | Deposition-selective etch-deposition process for dielectric film gapfill |
US7205240B2 (en) | 2003-06-04 | 2007-04-17 | Applied Materials, Inc. | HDP-CVD multistep gapfill process |
JP4558285B2 (ja) * | 2003-06-27 | 2010-10-06 | 東京エレクトロン株式会社 | プラズマクリーニング方法および基板処理方法 |
US7151277B2 (en) | 2003-07-03 | 2006-12-19 | The Regents Of The University Of California | Selective etching of silicon carbide films |
JP2005033023A (ja) | 2003-07-07 | 2005-02-03 | Sony Corp | 半導体装置の製造方法および半導体装置 |
JP4245996B2 (ja) | 2003-07-07 | 2009-04-02 | 株式会社荏原製作所 | 無電解めっきによるキャップ膜の形成方法およびこれに用いる装置 |
US7368392B2 (en) | 2003-07-10 | 2008-05-06 | Applied Materials, Inc. | Method of fabricating a gate structure of a field effect transistor having a metal-containing gate electrode |
JP3866694B2 (ja) | 2003-07-30 | 2007-01-10 | 株式会社日立ハイテクノロジーズ | Lsiデバイスのエッチング方法および装置 |
US7256134B2 (en) | 2003-08-01 | 2007-08-14 | Applied Materials, Inc. | Selective etching of carbon-doped low-k dielectrics |
US20050035455A1 (en) | 2003-08-14 | 2005-02-17 | Chenming Hu | Device with low-k dielectric in close proximity thereto and its method of fabrication |
US7078312B1 (en) | 2003-09-02 | 2006-07-18 | Novellus Systems, Inc. | Method for controlling etch process repeatability |
US6903031B2 (en) | 2003-09-03 | 2005-06-07 | Applied Materials, Inc. | In-situ-etch-assisted HDP deposition using SiF4 and hydrogen |
US7030034B2 (en) | 2003-09-18 | 2006-04-18 | Micron Technology, Inc. | Methods of etching silicon nitride substantially selectively relative to an oxide of aluminum |
US6967405B1 (en) | 2003-09-24 | 2005-11-22 | Yongsik Yu | Film for copper diffusion barrier |
JP2005101141A (ja) | 2003-09-24 | 2005-04-14 | Renesas Technology Corp | 半導体集積回路装置およびその製造方法 |
US7371688B2 (en) | 2003-09-30 | 2008-05-13 | Air Products And Chemicals, Inc. | Removal of transition metal ternary and/or quaternary barrier materials from a substrate |
EP1676295A2 (en) | 2003-10-06 | 2006-07-05 | Applied Materials, Inc. | Apparatus to improve wafer temperature uniformity for face-up wet processing |
US7581511B2 (en) | 2003-10-10 | 2009-09-01 | Micron Technology, Inc. | Apparatus and methods for manufacturing microfeatures on workpieces using plasma vapor processes |
US20070111519A1 (en) | 2003-10-15 | 2007-05-17 | Applied Materials, Inc. | Integrated electroless deposition system |
US7465358B2 (en) | 2003-10-15 | 2008-12-16 | Applied Materials, Inc. | Measurement techniques for controlling aspects of a electroless deposition process |
JP2005129688A (ja) | 2003-10-23 | 2005-05-19 | Hitachi Ltd | 半導体装置の製造方法 |
KR100561848B1 (ko) | 2003-11-04 | 2006-03-16 | 삼성전자주식회사 | 헬리컬 공진기형 플라즈마 처리 장치 |
US7709392B2 (en) | 2003-11-05 | 2010-05-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Low K dielectric surface damage control |
KR100550808B1 (ko) | 2003-11-17 | 2006-02-09 | 주식회사 에스테크 | 전자파 차폐 성능이 우수한 다층 구조의 시트 및 그 제조방법 |
US20050109276A1 (en) | 2003-11-25 | 2005-05-26 | Applied Materials, Inc. | Thermal chemical vapor deposition of silicon nitride using BTBAS bis(tertiary-butylamino silane) in a single wafer chamber |
US7202172B2 (en) | 2003-12-05 | 2007-04-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Microelectronic device having disposable spacer |
US7081407B2 (en) | 2003-12-16 | 2006-07-25 | Lam Research Corporation | Method of preventing damage to porous low-k materials during resist stripping |
US6958286B2 (en) | 2004-01-02 | 2005-10-25 | International Business Machines Corporation | Method of preventing surface roughening during hydrogen prebake of SiGe substrates |
US6893967B1 (en) | 2004-01-13 | 2005-05-17 | Advanced Micro Devices, Inc. | L-shaped spacer incorporating or patterned using amorphous carbon or CVD organic materials |
US20060033678A1 (en) | 2004-01-26 | 2006-02-16 | Applied Materials, Inc. | Integrated electroless deposition system |
US7291550B2 (en) | 2004-02-13 | 2007-11-06 | Chartered Semiconductor Manufacturing Ltd. | Method to form a contact hole |
JP4698251B2 (ja) | 2004-02-24 | 2011-06-08 | アプライド マテリアルズ インコーポレイテッド | 可動又は柔軟なシャワーヘッド取り付け |
US20060051966A1 (en) | 2004-02-26 | 2006-03-09 | Applied Materials, Inc. | In-situ chamber clean process to remove by-product deposits from chemical vapor etch chamber |
US20070123051A1 (en) | 2004-02-26 | 2007-05-31 | Reza Arghavani | Oxide etch with nh4-nf3 chemistry |
US7780793B2 (en) | 2004-02-26 | 2010-08-24 | Applied Materials, Inc. | Passivation layer formation by plasma clean process to reduce native oxide growth |
US20050230350A1 (en) | 2004-02-26 | 2005-10-20 | Applied Materials, Inc. | In-situ dry clean chamber for front end of line fabrication |
JP4879159B2 (ja) | 2004-03-05 | 2012-02-22 | アプライド マテリアルズ インコーポレイテッド | アモルファス炭素膜堆積のためのcvdプロセス |
US7196342B2 (en) | 2004-03-10 | 2007-03-27 | Cymer, Inc. | Systems and methods for reducing the influence of plasma-generated debris on the internal components of an EUV light source |
US7109521B2 (en) | 2004-03-18 | 2006-09-19 | Cree, Inc. | Silicon carbide semiconductor structures including multiple epitaxial layers having sidewalls |
US7582555B1 (en) | 2005-12-29 | 2009-09-01 | Novellus Systems, Inc. | CVD flowable gap fill |
US7244474B2 (en) | 2004-03-26 | 2007-07-17 | Applied Materials, Inc. | Chemical vapor deposition plasma process using an ion shower grid |
US8083853B2 (en) | 2004-05-12 | 2011-12-27 | Applied Materials, Inc. | Plasma uniformity control by gas diffuser hole design |
US7785672B2 (en) | 2004-04-20 | 2010-08-31 | Applied Materials, Inc. | Method of controlling the film properties of PECVD-deposited thin films |
US7018941B2 (en) | 2004-04-21 | 2006-03-28 | Applied Materials, Inc. | Post treatment of low k dielectric films |
US7115974B2 (en) | 2004-04-27 | 2006-10-03 | Taiwan Semiconductor Manfacturing Company, Ltd. | Silicon oxycarbide and silicon carbonitride based materials for MOS devices |
US20050266691A1 (en) | 2004-05-11 | 2005-12-01 | Applied Materials Inc. | Carbon-doped-Si oxide etch using H2 additive in fluorocarbon etch chemistry |
US8074599B2 (en) | 2004-05-12 | 2011-12-13 | Applied Materials, Inc. | Plasma uniformity control by gas diffuser curvature |
US8328939B2 (en) | 2004-05-12 | 2012-12-11 | Applied Materials, Inc. | Diffuser plate with slit valve compensation |
US7691686B2 (en) | 2004-05-21 | 2010-04-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US7049200B2 (en) | 2004-05-25 | 2006-05-23 | Applied Materials Inc. | Method for forming a low thermal budget spacer |
US7122949B2 (en) | 2004-06-21 | 2006-10-17 | Neocera, Inc. | Cylindrical electron beam generating/triggering device and method for generation of electrons |
US20060000802A1 (en) | 2004-06-30 | 2006-01-05 | Ajay Kumar | Method and apparatus for photomask plasma etching |
US8349128B2 (en) | 2004-06-30 | 2013-01-08 | Applied Materials, Inc. | Method and apparatus for stable plasma processing |
JP2006049817A (ja) | 2004-07-07 | 2006-02-16 | Showa Denko Kk | プラズマ処理方法およびプラズマエッチング方法 |
KR100614648B1 (ko) | 2004-07-15 | 2006-08-23 | 삼성전자주식회사 | 반도체 소자 제조에 사용되는 기판 처리 장치 |
US20060016783A1 (en) * | 2004-07-22 | 2006-01-26 | Dingjun Wu | Process for titanium nitride removal |
US7217626B2 (en) | 2004-07-26 | 2007-05-15 | Texas Instruments Incorporated | Transistor fabrication methods using dual sidewall spacers |
US7192863B2 (en) | 2004-07-30 | 2007-03-20 | Texas Instruments Incorporated | Method of eliminating etch ridges in a dual damascene process |
US20060024954A1 (en) | 2004-08-02 | 2006-02-02 | Zhen-Cheng Wu | Copper damascene barrier and capping layer |
US7115525B2 (en) | 2004-09-02 | 2006-10-03 | Micron Technology, Inc. | Method for integrated circuit fabrication using pitch multiplication |
US7329576B2 (en) | 2004-09-02 | 2008-02-12 | Micron Technology, Inc. | Double-sided container capacitors using a sacrificial layer |
US7390710B2 (en) | 2004-09-02 | 2008-06-24 | Micron Technology, Inc. | Protection of tunnel dielectric using epitaxial silicon |
US7148155B1 (en) | 2004-10-26 | 2006-12-12 | Novellus Systems, Inc. | Sequential deposition/anneal film densification method |
US20060093756A1 (en) | 2004-11-03 | 2006-05-04 | Nagarajan Rajagopalan | High-power dielectric seasoning for stable wafer-to-wafer thickness uniformity of dielectric CVD films |
US7618515B2 (en) | 2004-11-15 | 2009-11-17 | Tokyo Electron Limited | Focus ring, plasma etching apparatus and plasma etching method |
EP1831430A2 (en) | 2004-12-21 | 2007-09-12 | Applied Materials, Inc. | An in-situ chamber clean process to remove by-product deposits from chemical vapor etch chamber |
US20060130971A1 (en) | 2004-12-21 | 2006-06-22 | Applied Materials, Inc. | Apparatus for generating plasma by RF power |
US7365016B2 (en) | 2004-12-27 | 2008-04-29 | Dalsa Semiconductor Inc. | Anhydrous HF release of process for MEMS devices |
US7253123B2 (en) | 2005-01-10 | 2007-08-07 | Applied Materials, Inc. | Method for producing gate stack sidewall spacers |
US20060162661A1 (en) | 2005-01-22 | 2006-07-27 | Applied Materials, Inc. | Mixing energized and non-energized gases for silicon nitride deposition |
US7829243B2 (en) | 2005-01-27 | 2010-11-09 | Applied Materials, Inc. | Method for plasma etching a chromium layer suitable for photomask fabrication |
US7341943B2 (en) | 2005-02-08 | 2008-03-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Post etch copper cleaning using dry plasma |
JP4475136B2 (ja) | 2005-02-18 | 2010-06-09 | 東京エレクトロン株式会社 | 処理システム、前処理装置及び記憶媒体 |
JP4506677B2 (ja) | 2005-03-11 | 2010-07-21 | 東京エレクトロン株式会社 | 成膜方法、成膜装置及び記憶媒体 |
JP2006261217A (ja) | 2005-03-15 | 2006-09-28 | Canon Anelva Corp | 薄膜形成方法 |
US7253118B2 (en) | 2005-03-15 | 2007-08-07 | Micron Technology, Inc. | Pitch reduced patterns relative to photolithography features |
US20060246217A1 (en) | 2005-03-18 | 2006-11-02 | Weidman Timothy W | Electroless deposition process on a silicide contact |
KR100681390B1 (ko) | 2005-03-18 | 2007-02-09 | (주)한빛레이저 | 레이저빔의 초점위치를 임의의 3차원으로 고속이동 시킬 수 있는 광집속장치와 광편향장치를 이용한 반도체웨이퍼의 레이저 다이싱 및 스크라이빙 방법 |
WO2006102180A2 (en) | 2005-03-18 | 2006-09-28 | Applied Materials, Inc. | Contact metallization methods and processes |
US20060210723A1 (en) | 2005-03-21 | 2006-09-21 | Tokyo Electron Limited | Plasma enhanced atomic layer deposition system and method |
US7611944B2 (en) | 2005-03-28 | 2009-11-03 | Micron Technology, Inc. | Integrated circuit fabrication |
US7442274B2 (en) | 2005-03-28 | 2008-10-28 | Tokyo Electron Limited | Plasma etching method and apparatus therefor |
KR100689826B1 (ko) | 2005-03-29 | 2007-03-08 | 삼성전자주식회사 | 불소 함유된 화학적 식각 가스를 사용하는 고밀도 플라즈마화학기상증착 방법들 및 이를 채택하여 반도체 소자를제조하는 방법들 |
US7288482B2 (en) | 2005-05-04 | 2007-10-30 | International Business Machines Corporation | Silicon nitride etching methods |
KR100745067B1 (ko) | 2005-05-18 | 2007-08-01 | 주식회사 하이닉스반도체 | 반도체 소자의 트렌치 소자분리막 및 그 형성방법 |
US20060266288A1 (en) | 2005-05-27 | 2006-11-30 | Applied Materials, Inc. | High plasma utilization for remote plasma clean |
WO2007035880A2 (en) | 2005-09-21 | 2007-03-29 | Applied Materials, Inc. | Method and apparatus for forming device features in an integrated electroless deposition system |
KR100703014B1 (ko) | 2005-10-26 | 2007-04-06 | 삼성전자주식회사 | 실리콘 산화물 식각액 및 이를 이용한 반도체 소자의 제조 방법 |
EP1780779A3 (en) | 2005-10-28 | 2008-06-11 | Interuniversitair Microelektronica Centrum ( Imec) | A plasma for patterning advanced gate stacks |
US7884032B2 (en) | 2005-10-28 | 2011-02-08 | Applied Materials, Inc. | Thin film deposition |
US20070099806A1 (en) | 2005-10-28 | 2007-05-03 | Stewart Michael P | Composition and method for selectively removing native oxide from silicon-containing surfaces |
US7696101B2 (en) | 2005-11-01 | 2010-04-13 | Micron Technology, Inc. | Process for increasing feature density during the manufacture of a semiconductor device |
US20070107750A1 (en) | 2005-11-14 | 2007-05-17 | Sawin Herbert H | Method of using NF3 for removing surface deposits from the interior of chemical vapor deposition chambers |
US20070117396A1 (en) | 2005-11-22 | 2007-05-24 | Dingjun Wu | Selective etching of titanium nitride with xenon difluoride |
US7405160B2 (en) | 2005-12-13 | 2008-07-29 | Tokyo Electron Limited | Method of making semiconductor device |
JP2007173383A (ja) | 2005-12-20 | 2007-07-05 | Sharp Corp | トレンチ素子分離領域の形成方法、窒化シリコン膜ライナーの形成方法、半導体装置の製造方法 |
JP2007191792A (ja) | 2006-01-19 | 2007-08-02 | Atto Co Ltd | ガス分離型シャワーヘッド |
US7494545B2 (en) | 2006-02-03 | 2009-02-24 | Applied Materials, Inc. | Epitaxial deposition process and apparatus |
KR100752622B1 (ko) | 2006-02-17 | 2007-08-30 | 한양대학교 산학협력단 | 원거리 플라즈마 발생장치 |
US7780865B2 (en) | 2006-03-31 | 2010-08-24 | Applied Materials, Inc. | Method to improve the step coverage and pattern loading for dielectric films |
JP5042517B2 (ja) | 2006-04-10 | 2012-10-03 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
CN100539080C (zh) | 2006-04-12 | 2009-09-09 | 中芯国际集成电路制造(上海)有限公司 | 通过自对准形成多晶硅浮栅结构的方法 |
JP2007311540A (ja) | 2006-05-18 | 2007-11-29 | Renesas Technology Corp | 半導体装置の製造方法 |
US20070281106A1 (en) | 2006-05-30 | 2007-12-06 | Applied Materials, Inc. | Process chamber for dielectric gapfill |
US7416989B1 (en) | 2006-06-30 | 2008-08-26 | Novellus Systems, Inc. | Adsorption based material removal process |
KR20080013174A (ko) | 2006-08-07 | 2008-02-13 | 주식회사 하이닉스반도체 | 캐패시터의 스토리지노드 분리 방법 |
US20080124937A1 (en) | 2006-08-16 | 2008-05-29 | Songlin Xu | Selective etching method and apparatus |
KR100818708B1 (ko) | 2006-08-18 | 2008-04-01 | 주식회사 하이닉스반도체 | 표면 세정을 포함하는 반도체소자 제조방법 |
US7575007B2 (en) | 2006-08-23 | 2009-08-18 | Applied Materials, Inc. | Chamber recovery after opening barrier over copper |
US8110787B1 (en) | 2006-08-23 | 2012-02-07 | ON Semiconductor Trading, Ltd | Image sensor with a reflective waveguide |
US20080075668A1 (en) | 2006-09-27 | 2008-03-27 | Goldstein Alan H | Security Device Using Reversibly Self-Assembling Systems |
CN101153396B (zh) | 2006-09-30 | 2010-06-09 | 中芯国际集成电路制造(上海)有限公司 | 等离子刻蚀方法 |
JP2008103645A (ja) | 2006-10-20 | 2008-05-01 | Toshiba Corp | 半導体装置の製造方法 |
US20080099147A1 (en) | 2006-10-26 | 2008-05-01 | Nyi Oo Myo | Temperature controlled multi-gas distribution assembly |
US7943005B2 (en) | 2006-10-30 | 2011-05-17 | Applied Materials, Inc. | Method and apparatus for photomask plasma etching |
US7700479B2 (en) | 2006-11-06 | 2010-04-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Cleaning processes in the formation of integrated circuit interconnect structures |
US20080142483A1 (en) | 2006-12-07 | 2008-06-19 | Applied Materials, Inc. | Multi-step dep-etch-dep high density plasma chemical vapor deposition processes for dielectric gapfills |
US7939422B2 (en) | 2006-12-07 | 2011-05-10 | Applied Materials, Inc. | Methods of thin film process |
KR20090094368A (ko) | 2006-12-11 | 2009-09-04 | 어플라이드 머티어리얼스, 인코포레이티드 | 건식 포토레지스트 스트립핑 프로세스 및 장치 |
TWM318795U (en) | 2006-12-18 | 2007-09-11 | Lighthouse Technology Co Ltd | Package structure |
WO2008074672A1 (en) | 2006-12-20 | 2008-06-26 | Nxp B.V. | Improving adhesion of diffusion barrier on cu containing interconnect element |
US7808053B2 (en) | 2006-12-29 | 2010-10-05 | Intel Corporation | Method, apparatus, and system for flash memory |
KR20080063988A (ko) | 2007-01-03 | 2008-07-08 | 삼성전자주식회사 | 중성빔을 이용한 식각장치 |
KR100878015B1 (ko) | 2007-01-31 | 2009-01-13 | 삼성전자주식회사 | 산화물 제거 방법 및 이를 이용한 트렌치 매립 방법 |
US20080202892A1 (en) | 2007-02-27 | 2008-08-28 | Smith John M | Stacked process chambers for substrate vacuum processing tool |
KR100853485B1 (ko) | 2007-03-19 | 2008-08-21 | 주식회사 하이닉스반도체 | 리세스 게이트를 갖는 반도체 소자의 제조 방법 |
US20080233709A1 (en) | 2007-03-22 | 2008-09-25 | Infineon Technologies North America Corp. | Method for removing material from a semiconductor |
US7815814B2 (en) | 2007-03-23 | 2010-10-19 | Tokyo Electron Limited | Method and system for dry etching a metal nitride |
JP5135879B2 (ja) | 2007-05-21 | 2013-02-06 | 富士電機株式会社 | 炭化珪素半導体装置の製造方法 |
US8084105B2 (en) | 2007-05-23 | 2011-12-27 | Applied Materials, Inc. | Method of depositing boron nitride and boron nitride-derived materials |
US7807578B2 (en) | 2007-06-01 | 2010-10-05 | Applied Materials, Inc. | Frequency doubling using spacer mask |
KR100877107B1 (ko) | 2007-06-28 | 2009-01-07 | 주식회사 하이닉스반도체 | 반도체 소자의 층간절연막 형성방법 |
KR101050454B1 (ko) | 2007-07-02 | 2011-07-19 | 주식회사 하이닉스반도체 | 반도체 소자의 소자 분리막 및 그 형성방법 |
US8021514B2 (en) | 2007-07-11 | 2011-09-20 | Applied Materials, Inc. | Remote plasma source for pre-treatment of substrates prior to deposition |
JP5047881B2 (ja) | 2007-07-13 | 2012-10-10 | 東京応化工業株式会社 | 窒化チタン剥離液、及び窒化チタン被膜の剥離方法 |
US8008166B2 (en) | 2007-07-26 | 2011-08-30 | Applied Materials, Inc. | Method and apparatus for cleaning a substrate surface |
US8313610B2 (en) | 2007-09-25 | 2012-11-20 | Lam Research Corporation | Temperature control modules for showerhead electrode assemblies for plasma processing apparatuses |
US8252696B2 (en) | 2007-10-22 | 2012-08-28 | Applied Materials, Inc. | Selective etching of silicon nitride |
US7871926B2 (en) | 2007-10-22 | 2011-01-18 | Applied Materials, Inc. | Methods and systems for forming at least one dielectric layer |
EP2227831A2 (de) | 2007-12-04 | 2010-09-15 | Parabel Ag | Mehrschichtiges solarelement |
US8187486B1 (en) | 2007-12-13 | 2012-05-29 | Novellus Systems, Inc. | Modulating etch selectivity and etch rate of silicon nitride thin films |
JP2009170890A (ja) | 2007-12-18 | 2009-07-30 | Takashima & Co Ltd | 可撓性膜状太陽電池複層体 |
US7910477B2 (en) | 2007-12-28 | 2011-03-22 | Texas Instruments Incorporated | Etch residue reduction by ash methodology |
TW200933812A (en) | 2008-01-30 | 2009-08-01 | Promos Technologies Inc | Process for forming trench isolation structure and semiconductor device produced thereby |
US8252194B2 (en) | 2008-05-02 | 2012-08-28 | Micron Technology, Inc. | Methods of removing silicon oxide |
US8236133B2 (en) | 2008-05-05 | 2012-08-07 | Applied Materials, Inc. | Plasma reactor with center-fed multiple zone gas distribution for improved uniformity of critical dimension bias |
US8357435B2 (en) | 2008-05-09 | 2013-01-22 | Applied Materials, Inc. | Flowable dielectric equipment and processes |
US20090277874A1 (en) | 2008-05-09 | 2009-11-12 | Applied Materials, Inc. | Method and apparatus for removing polymer from a substrate |
KR20100013980A (ko) | 2008-08-01 | 2010-02-10 | 주식회사 하이닉스반도체 | 반도체 소자의 소자 분리막 형성 방법 |
US8268729B2 (en) | 2008-08-21 | 2012-09-18 | International Business Machines Corporation | Smooth and vertical semiconductor fin structure |
KR101025741B1 (ko) | 2008-09-02 | 2011-04-04 | 주식회사 하이닉스반도체 | 수직 채널 트랜지스터의 활성필라 제조방법 |
US7709396B2 (en) | 2008-09-19 | 2010-05-04 | Applied Materials, Inc. | Integral patterning of large features along with array using spacer mask patterning process flow |
US7968441B2 (en) | 2008-10-08 | 2011-06-28 | Applied Materials, Inc. | Dopant activation anneal to achieve less dopant diffusion (better USJ profile) and higher activation percentage |
US8563090B2 (en) | 2008-10-16 | 2013-10-22 | Applied Materials, Inc. | Boron film interface engineering |
US7910491B2 (en) | 2008-10-16 | 2011-03-22 | Applied Materials, Inc. | Gapfill improvement with low etch rate dielectric liners |
US20100099263A1 (en) | 2008-10-20 | 2010-04-22 | Applied Materials, Inc. | Nf3/h2 remote plasma process with high etch selectivity of psg/bpsg over thermal oxide and low density surface defects |
US8173547B2 (en) | 2008-10-23 | 2012-05-08 | Lam Research Corporation | Silicon etch with passivation using plasma enhanced oxidation |
US20100101727A1 (en) | 2008-10-27 | 2010-04-29 | Helin Ji | Capacitively coupled remote plasma source with large operating pressure range |
US20100144140A1 (en) | 2008-12-10 | 2010-06-10 | Novellus Systems, Inc. | Methods for depositing tungsten films having low resistivity for gapfill applications |
US8058179B1 (en) | 2008-12-23 | 2011-11-15 | Novellus Systems, Inc. | Atomic layer removal process with higher etch amount |
KR20100074508A (ko) | 2008-12-24 | 2010-07-02 | 주식회사 동부하이텍 | 반도체 소자의 제조 방법 |
JP2010154699A (ja) | 2008-12-26 | 2010-07-08 | Hitachi Ltd | 磁束可変型回転電機 |
KR101587601B1 (ko) | 2009-01-14 | 2016-01-25 | 삼성전자주식회사 | 비휘발성 메모리 장치의 제조 방법 |
US20100187694A1 (en) | 2009-01-28 | 2010-07-29 | Chen-Hua Yu | Through-Silicon Via Sidewall Isolation Structure |
KR20100087915A (ko) | 2009-01-29 | 2010-08-06 | 삼성전자주식회사 | 실린더형 스토리지 노드를 포함하는 반도체 메모리 소자 및그 제조 방법 |
US7964517B2 (en) | 2009-01-29 | 2011-06-21 | Texas Instruments Incorporated | Use of a biased precoat for reduced first wafer defects in high-density plasma process |
US8992723B2 (en) | 2009-02-13 | 2015-03-31 | Applied Material, Inc. | RF bus and RF return bus for plasma chamber electrode |
US8148749B2 (en) | 2009-02-19 | 2012-04-03 | Fairchild Semiconductor Corporation | Trench-shielded semiconductor device |
KR20100099535A (ko) | 2009-03-03 | 2010-09-13 | 주성엔지니어링(주) | 기판처리장치 및 그의 제조방법 |
EP2409313A1 (de) | 2009-03-17 | 2012-01-25 | Roth & Rau AG | Substratbearbeitungsanlage und substratbearbeitungsverfahren |
US8193075B2 (en) | 2009-04-20 | 2012-06-05 | Applied Materials, Inc. | Remote hydrogen plasma with ion filter for terminating silicon dangling bonds |
US8492292B2 (en) | 2009-06-29 | 2013-07-23 | Applied Materials, Inc. | Methods of forming oxide layers on substrates |
KR101598332B1 (ko) | 2009-07-15 | 2016-03-14 | 어플라이드 머티어리얼스, 인코포레이티드 | Cvd 챔버의 유동 제어 피쳐 |
US8124531B2 (en) | 2009-08-04 | 2012-02-28 | Novellus Systems, Inc. | Depositing tungsten into high aspect ratio features |
US7935643B2 (en) | 2009-08-06 | 2011-05-03 | Applied Materials, Inc. | Stress management for tensile films |
US8211808B2 (en) | 2009-08-31 | 2012-07-03 | Applied Materials, Inc. | Silicon-selective dry etch for carbon-containing films |
US8329587B2 (en) | 2009-10-05 | 2012-12-11 | Applied Materials, Inc. | Post-planarization densification |
CN102754201A (zh) * | 2009-10-26 | 2012-10-24 | 苏威氟有限公司 | 用于生产tft基质的蚀刻方法 |
US8728958B2 (en) | 2009-12-09 | 2014-05-20 | Novellus Systems, Inc. | Gap fill integration |
US8202803B2 (en) | 2009-12-11 | 2012-06-19 | Tokyo Electron Limited | Method to remove capping layer of insulation dielectric in interconnect structures |
US20110151677A1 (en) | 2009-12-21 | 2011-06-23 | Applied Materials, Inc. | Wet oxidation process performed on a dielectric material formed from a flowable cvd process |
US8501629B2 (en) | 2009-12-23 | 2013-08-06 | Applied Materials, Inc. | Smooth SiConi etch for silicon-containing films |
JP4927158B2 (ja) | 2009-12-25 | 2012-05-09 | 東京エレクトロン株式会社 | 基板処理方法、その基板処理方法を実行させるためのプログラムを記録した記録媒体及び基板処理装置 |
JP5166458B2 (ja) | 2010-01-22 | 2013-03-21 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP5608384B2 (ja) | 2010-02-05 | 2014-10-15 | 東京エレクトロン株式会社 | 半導体装置の製造方法及びプラズマエッチング装置 |
US8361338B2 (en) | 2010-02-11 | 2013-01-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Hard mask removal method |
JP2013521650A (ja) | 2010-03-05 | 2013-06-10 | アプライド マテリアルズ インコーポレイテッド | ラジカル成分cvdによる共形層 |
JP5450187B2 (ja) | 2010-03-16 | 2014-03-26 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
US8435902B2 (en) | 2010-03-17 | 2013-05-07 | Applied Materials, Inc. | Invertable pattern loading with dry etch |
US8475674B2 (en) | 2010-04-30 | 2013-07-02 | Applied Materials, Inc. | High-temperature selective dry etch having reduced post-etch solid residue |
US9324576B2 (en) | 2010-05-27 | 2016-04-26 | Applied Materials, Inc. | Selective etch for silicon films |
US20120009796A1 (en) | 2010-07-09 | 2012-01-12 | Applied Materials, Inc. | Post-ash sidewall healing |
US9184028B2 (en) | 2010-08-04 | 2015-11-10 | Lam Research Corporation | Dual plasma volume processing apparatus for neutral/ion flux control |
KR20120029291A (ko) | 2010-09-16 | 2012-03-26 | 삼성전자주식회사 | 반도체 소자 및 그 제조 방법 |
US8133349B1 (en) | 2010-11-03 | 2012-03-13 | Lam Research Corporation | Rapid and uniform gas switching for a plasma etch process |
KR20120058962A (ko) | 2010-11-30 | 2012-06-08 | 삼성전자주식회사 | 반도체 장치의 제조 방법 |
US8741778B2 (en) | 2010-12-14 | 2014-06-03 | Applied Materials, Inc. | Uniform dry etch in two stages |
JP5728221B2 (ja) | 2010-12-24 | 2015-06-03 | 東京エレクトロン株式会社 | 基板処理方法及び記憶媒体 |
KR101529578B1 (ko) | 2011-01-14 | 2015-06-19 | 성균관대학교산학협력단 | 플라즈마 기판 처리 장치 및 방법 |
US8771539B2 (en) | 2011-02-22 | 2014-07-08 | Applied Materials, Inc. | Remotely-excited fluorine and water vapor etch |
US8999856B2 (en) * | 2011-03-14 | 2015-04-07 | Applied Materials, Inc. | Methods for etch of sin films |
US9064815B2 (en) | 2011-03-14 | 2015-06-23 | Applied Materials, Inc. | Methods for etch of metal and metal-oxide films |
US8415250B2 (en) | 2011-04-29 | 2013-04-09 | International Business Machines Corporation | Method of forming silicide contacts of different shapes selectively on regions of a semiconductor device |
US20120285621A1 (en) | 2011-05-10 | 2012-11-15 | Applied Materials, Inc. | Semiconductor chamber apparatus for dielectric processing |
US9012283B2 (en) | 2011-05-16 | 2015-04-21 | International Business Machines Corporation | Integrated circuit (IC) chip having both metal and silicon gate field effect transistors (FETs) and method of manufacture |
US8562785B2 (en) | 2011-05-31 | 2013-10-22 | Lam Research Corporation | Gas distribution showerhead for inductively coupled plasma etch reactor |
US8883637B2 (en) | 2011-06-30 | 2014-11-11 | Novellus Systems, Inc. | Systems and methods for controlling etch selectivity of various materials |
KR20110086540A (ko) * | 2011-07-12 | 2011-07-28 | 조인숙 | 불소화합물을 이용한 필름의 선택적인 식각 방법 |
US8771536B2 (en) | 2011-08-01 | 2014-07-08 | Applied Materials, Inc. | Dry-etch for silicon-and-carbon-containing films |
US20130045605A1 (en) | 2011-08-18 | 2013-02-21 | Applied Materials, Inc. | Dry-etch for silicon-and-nitrogen-containing films |
US8735291B2 (en) | 2011-08-25 | 2014-05-27 | Tokyo Electron Limited | Method for etching high-k dielectric using pulsed bias power |
US8679982B2 (en) | 2011-08-26 | 2014-03-25 | Applied Materials, Inc. | Selective suppression of dry-etch rate of materials containing both silicon and oxygen |
US8679983B2 (en) | 2011-09-01 | 2014-03-25 | Applied Materials, Inc. | Selective suppression of dry-etch rate of materials containing both silicon and nitrogen |
US8927390B2 (en) | 2011-09-26 | 2015-01-06 | Applied Materials, Inc. | Intrench profile |
US8808563B2 (en) | 2011-10-07 | 2014-08-19 | Applied Materials, Inc. | Selective etch of silicon by way of metastable hydrogen termination |
US8603891B2 (en) | 2012-01-20 | 2013-12-10 | Micron Technology, Inc. | Methods for forming vertical memory devices and apparatuses |
KR102131581B1 (ko) | 2012-03-27 | 2020-07-08 | 노벨러스 시스템즈, 인코포레이티드 | 텅스텐 피처 충진 |
US20130284369A1 (en) | 2012-04-26 | 2013-10-31 | Applied Materials, Inc. | Two-phase operation of plasma chamber by phase locked loop |
US9161428B2 (en) | 2012-04-26 | 2015-10-13 | Applied Materials, Inc. | Independent control of RF phases of separate coils of an inductively coupled plasma reactor |
US8772888B2 (en) | 2012-08-10 | 2014-07-08 | Avalanche Technology Inc. | MTJ MRAM with stud patterning |
US9556507B2 (en) | 2013-03-14 | 2017-01-31 | Applied Materials, Inc. | Yttria-based material coated chemical vapor deposition chamber heater |
US8956980B1 (en) * | 2013-09-16 | 2015-02-17 | Applied Materials, Inc. | Selective etch of silicon nitride |
-
2013
- 2013-11-25 US US14/089,182 patent/US8956980B1/en active Active
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- 2014-07-31 WO PCT/US2014/049215 patent/WO2015038252A1/en active Application Filing
- 2014-07-31 CN CN201480050763.5A patent/CN105580118B/zh active Active
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI648785B (zh) * | 2016-05-29 | 2019-01-21 | 東京威力科創股份有限公司 | 選擇性氮化矽蝕刻方法 |
US11081360B2 (en) | 2016-11-07 | 2021-08-03 | Tokyo Electron Limited | Method for processing workpiece |
TWI759348B (zh) * | 2016-11-07 | 2022-04-01 | 日商東京威力科創股份有限公司 | 被處理體之處理方法 |
TWI790265B (zh) * | 2017-08-04 | 2023-01-21 | 美商微材料有限責任公司 | 改良之金屬接觸定位結構 |
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US8956980B1 (en) | 2015-02-17 |
JP2016537824A (ja) | 2016-12-01 |
WO2015038252A1 (en) | 2015-03-19 |
US9209012B2 (en) | 2015-12-08 |
US20150079797A1 (en) | 2015-03-19 |
JP6553049B2 (ja) | 2019-07-31 |
CN105580118A (zh) | 2016-05-11 |
CN105580118B (zh) | 2019-03-22 |
KR102305317B1 (ko) | 2021-09-28 |
TWI631614B (zh) | 2018-08-01 |
KR20160056935A (ko) | 2016-05-20 |
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