CN105580118A - 氮化硅的选择性蚀刻 - Google Patents

氮化硅的选择性蚀刻 Download PDF

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CN105580118A
CN105580118A CN201480050763.5A CN201480050763A CN105580118A CN 105580118 A CN105580118 A CN 105580118A CN 201480050763 A CN201480050763 A CN 201480050763A CN 105580118 A CN105580118 A CN 105580118A
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plasma
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Z·陈
Z·李
A·王
N·K·英格尔
S·文卡特拉曼
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Abstract

描述了蚀刻经图案化的异质结构上的氮化硅的方法，并且所述方法包括由含氟前体以及含氮和氧的前体形成的远程等离子体蚀刻。使来自两个远程等离子体的等离子体流出物流入基板处理区域，在所述基板处理区域中，等离子体流出物与氮化硅反应。等离子体流出物与经图案化的异质结构反应，以便选择性地去除氮化硅，同时非常缓慢地去除硅(诸如，多晶硅)。氮化硅的选择性部分地源于使用相异的(但可能重叠的)等离子体路径而引入含氟前体以及含氮和氧的前体，所述相异的等离子体路径可以是串联的或并联的。

Description

氮化硅的选择性蚀刻
技术领域
本发明的实施例关于选择性地去除氮化硅。
背景技术
通过在基板表面上产生经复杂地图案化的材料层的工艺使集成电路成为可能。在基板上产生经图案化的材料需要用于去除被暴露的材料的受控的方法。化学蚀刻用于各种目的，包括将光阻中的图案转移到位于下方的层中、薄化的层或已经存在于表面上的特征的薄化的侧向尺度。通常期望具有比蚀刻另一种材料更快地来蚀刻一种材料的蚀刻工艺，从而有助于例如图案转移工艺进行。可以说此类蚀刻工艺对第一材料是选择性的。作为材料、电路与工艺多样化的结果，已开发出具有对各种材料的选择性的蚀刻工艺。然而，几乎没有用于相比去除硅更快地来选择性地去除氮化硅的选项。
干法蚀刻工艺对于选择地将材料从半导体基板上去除通常是所期望的。此期望性源自在伴随最小的物理干扰的情况下温和地将材料从微型结构中去除的能力。通过去除气相反应剂，干法蚀刻工艺还允许使蚀刻速率突然停止。一些干法蚀刻工艺涉及将基板暴露于由一种或多种前体形成的远程等离子体副产物。例如，当使等离子体流出物流入基板处理区域时，对氨和三氟化氮的远程等离子体激发可使氧化硅被选择性地从经图案化的基板中去除。还开发了远程等离子体蚀刻工艺来去除氮化硅，然而，这些蚀刻工艺的氮化硅选择性(相对于硅)已受到限制。
因此，需要改善用于干法蚀刻工艺的氮化硅相对于硅的选择性的方法。
发明内容
描述了蚀刻经图案化的异质结构上的氮化硅的方法，并且所述方法包括由含氟前体以及含氮和氧的前体形成的远程等离子体蚀刻。使来自两个远程等离子体的等离子体流出物流入基板处理区域，在所述基板处理区域中等离子体流出物与氮化硅反应。等离子体流出物与经图案化的异质结构反应，以便选择性地去除氮化硅，同时非常缓慢地去除硅(诸如，多晶硅)。氮化硅的选择性部分地源于将含氟前体以及含氮和氧的前体引入串联或并联地布置的两个分开的等离子体所述。可顺序地在两个等离子体中激发含氮和氧的前体，并且可仅在下游等离子体中激发含氟前体(的至少部分)。或者，可在高功率等离子体中激发含氮和氧的前体，并且可在低强度等离子体中激发含氟前体，在这种情况下，可使用双通道喷淋头在基板处理区域中结合相应的等离子体流出物。
本发明的实施例包括蚀刻经图案化的基板的方法。所述方法包括以下步骤：将经图案化的基板传送到基板处理腔室的基板处理区域中。经图案化的基板具有被暴露的氮化硅。所述方法进一步包括以下步骤：当在第一远程等离子体区域中形成第一远程等离子体时，使含氮和氧的前体流入第一远程等离子体区域以产生氧化等离子体流出物，第一远程等离子体区域流体地耦接至第二远程等离子体区域。所述方法进一步包括以下步骤：当在第二远程等离子体区域中形成第二远程等离子体时，使含氟前体流入第二远程等离子体区域以产生蚀刻等离子体流出物，第二远程等离子体区域流体地耦接至基板处理区域。所述方法进一步包括以下步骤：使氧化等离子体流出物和蚀刻等离子体流出物中的每一者通过喷淋头中的通孔而流入基板处理区域。所述方法进一步包括以下步骤：蚀刻被暴露的氮化硅。经图案化的基板进一步包含被暴露的硅。
本发明的实施例包括蚀刻经图案化的基板的方法。所述方法包括以下步骤：将经图案化的基板传送到基板处理腔室的基板处理区域中。经图案化的基板包括被暴露的氮化硅区以及被暴露的硅区。所述方法进一步包括以下步骤：当在远程等离子体系统中形成第一远程等离子体时，使含氮和氧的前体流入第一远程等离子体区域以产生氧化等离子体流出物。所述方法进一步包括以下步骤：当在第二远程等离子体区域中形成第二远程等离子体时，使含氟前体流入第二远程等离子体区域以产生自由基-氟，第二等离子体与第一等离子体相异。所述方法进一步包括以下步骤：在基板处理腔室中将氧化等离子体流出物与自由基-氟结合。使氧化等离子体流出物和自由基-氟流经多通道喷淋头的分开的通道。所述方法进一步包括以下步骤：以比蚀刻被暴露的硅更大的蚀刻速率来选择性地蚀刻被暴露的氮化硅。
本发明的实施例包括蚀刻经图案化的基板的方法。所述方法包括以下步骤：将经图案化的基板传送到基板处理腔室的基板处理区域中。经图案化的基板包括被暴露的氮化硅区以及被暴露的硅区。所述方法进一步包括以下步骤：使N2O流入第一远程等离子体以产生氧化等离子体流出物，第一远程等离子体设置在基板处理腔室外部。所述方法进一步包括以下步骤：使NF3流入第二远程等离子体以产生含氟的等离子体流出物，第二远程等离子体与第一远程等离子体分开。NF3在第一远程等离子体中基本上不被激发。所述方法进一步包括以下步骤：在基板处理腔室中将氧化等离子体流出物与含氟等离子体流出物结合。所述方法进一步包括以下步骤：相对于蚀刻被暴露的硅来选择性地蚀刻被暴露的氮化硅。
附加的实施例和特征部分地在以下描述中陈述，部分地将在本领域技术人员详阅本说明书后对他们而言变得明显，或者可通过实践实施例来学习。通过说明书中描述的设备、组合与方法，可实现并获得实施例的特征和优点。
附图说明
通过参考说明书的其余部分和附图，可进一步理解实施例的性质与优点。
图1是根据实施例的氮化硅选择性蚀刻工艺的流程图。
图2是根据实施例的氮化硅选择性蚀刻工艺的流程图。
图3A示出根据实施例的基板处理腔室。
图3B示出根据实施例的基板处理腔室的喷淋头。
图4示出根据实施例的基板处理系统。
在附图中，类似的部件和/或特征可具有相同的元件符号。此外，可通过在元件符号后加上破折号以及第二符号(此符号在多个类似的部件之间进行区分)来区分相同类型的各部件。如果在说明书中仅用第一元件符号，则无论第二元件符合如何，此描述适用于具有相同的第一元件符号的类似的部件中的任一者。
具体实施方式
描述了蚀刻经图案化的异质结构上的氮化硅的方法，并且所述方法包括由含氟前体以及含氮和氧的前体形成的远程等离子体蚀刻。使来自两个远程等离子体的等离子体流出物流入基板处理区域，在所述基板处理区域中，等离子体流出物与氮化硅反应。等离子体流出物与经图案化的异质结构反应，以便选择性地去除氮化硅，同时非常缓慢地去除硅(诸如，多晶硅)。氮化硅的选择性部分地源于将含氟前体以及含氮和氧前体引入导串联或并联地布置的两个分开的等离子体中所述。可顺序地在两个等离子体中激发含氮和氧的前体，并且可仅在下游等离子体中激发含氟前体。或者，可在高功率等离子体中激发含氮和氧的前体，并且可在低强度等离子体中激发含氟前体，在这种情况下，可用双通道喷淋头在基板处理区域中结合相应的等离子体流出物。
为了更好地理解并领会本发明，现请参照图1，图1是根据实施例的氮化硅选择性蚀刻工艺100的流程图。在第一操作之前，结构被形成在经图案化的基板中。所述结构拥有被暴露的氮化硅和硅区。接着在操作110中，将基板递送到基板处理区域中。
使一氧化二氮(N2O)流入远程等离子体系统(操作120)。在远程等离子体区域中形成的第一远程等离子体中激发N2O。远程等离子体系统在基板处理腔室外部。更一般而言，使含氮和氧的前体流入远程等离子体系统，并且含氮和氧的前体可包含选自N2O、NO、N2O2、NO2中的至少一种的前体。含氮和氧的前体可基本上由氮和氧组成，或可由氮和氧组成。一些含氮和氧的前体可能很具电负性，并且需要高等离子体功率来形成氧化等离子体流出物。接着将氧化等离子体流出物传送到远程等离子体区域中，能以较低的等离子体功率来激发此氧化等离子体流出物以形成第二远程等离子体。远程等离子体系统在远程等离子体区域的上游，因为流出物通常从远程等离子体系统流入远程等离子体区域，而不是相反。
三氟化氮流被引入到远程等离子体区域中，并与氧化等离子体流出物结合(操作125)。在实施例中，三氟化氮直接流入远程等离子体区域，并且不进入上游的远程等离子体系统。可将另一三氟化氮的流直接添加至上游的远程等离子体路径，并且已发现所述另一三氟化氮的流可有助于调整蚀刻速率和/或改善蚀刻速率均匀性。也可使用其他氟源来扩增或取代三氟化氮。一般而言，可使含氟前体流入等离子体区域，并且此含氟前体包含选自由以下各项组成的组的至少一种前体：原子氟、双原子氟、三氟化溴、三氟化氯、三氟化氮、氟化氢、六氟化硫和二氟化氙。甚至可将含碳前体(诸如，四氟化碳、三氟甲烷、二氟甲烷和氟代甲烷)添加至已经列出的组中。使用含碳前体通常需要增加的流或等离子体功率以使含氮和氧的前体在可被并入基板之前来与碳反应。
使在远程等离子体区域中形成的等离子体流出物流入基板处理区域(操作130)。选择性地蚀刻经图案化的基板(操作135)，使得能以比去除被暴露的硅更高的速率来选择性地去除被暴露的氮化硅。已发现氮和氧的存在剧烈地氧化被暴露的硅，从而导致硅域基本上无法由根据实施例的含氟等离子体流出物蚀刻。多个被暴露的氧化硅区也可存在于经图案化的基板上。从基板处理区域中去除反应性化学物质，并且接着从处理区域中移除基板(操作145)。
进入远程等离子体系统并接着进入远程等离子体区域的N2O流(或另一含氮和氧的前体)可导致氧化等离子体流出物的流(所述氧化等离子体流出物含有自由基-氮-氧)进入基板处理区域。在本文中将使用等离子体流出物来涵盖含氟的等离子体流出物和氧化等离子体流出物。氧化等离子体流出物包括自由基-氮-氧。自由基-氮-氧被认为含有一氧化氮(NO)，一氧化氮过于具有反应性而不能被直接递送至基板处理区域。自由基-氮-氧含有自由基，所述自由基包含氮和氧，并且在实施例中可由氮和氧构成。自由基-氮-氧可以是在操作130中流入基板处理区域的等离子体流出物的成分。等离子体流出物也包含进入远程等离子体区域的含氟前体的流形成的自由基-氟。进入基板处理区域的自由基-氮-氧的流使自由基-氟能去除氮化硅，同时限制被暴露的硅的去除速率。进入基板处理区域的自由基-氮-氧的流对被暴露的氧化硅区几乎没有影响，并且自由基-氟基本上无法蚀刻氧化硅区。
如本文中所述，包括了含氮和氧的前体以及所得到的自由基-氮-氧所述，则可以不显著地影响氮化硅的蚀刻速率，但确实降低了硅的蚀刻速率，从而导致相对高的选择性。已发现含氮和氧的前体可令人意外地比氧更剧烈地将硅氧化，并且增加了普遍且可靠地可实现的选择性。本文中所述的蚀刻工艺参数适用于本文中所公开的所有实施例，包括在下文所描述的图2中所描述的实施例。在实施例中，蚀刻工艺100的选择性(被暴露的氮化硅：被暴露的硅)大于或等于约20：1、大于或等于约25：1或大于或等于约30：1。含氟前体和/或含氮和氧的前体可进一步包括一种或多种相对惰性的气体(如，He、N2、Ar)。含氟前体和/或含氮和氧的前体可进一步包括一种或多种反应性气体(如，H2、O2)。可使用惰性气体来改善等离子体的稳定性、可点燃性(strikability)或均匀性。可使用不同气体的流速和比例来控制蚀刻速率和蚀刻选择性。在实施例中，含氟气体包括：流速在约5sccm(每分钟标准立方厘米)与300sccm之间的NF3、流速在约50sccm与2slm(每分钟标准升)之间的N2O、以及流速在约0sccm与3000sccm之间的He。可包括氩(特别是在初始点燃等离子体时)以促进等离子体的启动。本领域技术人员将认知到，取决于多种因素，可使用其他气体和/或流，所述因素包括处理腔室配置、基板尺寸、被蚀刻的特征的几何结构和布局。
一些含氢前体也可与其他前体结合，或可单独地流入等离子体区域，然而，浓度应当保持为低浓度。氢可在等离子体中与含氟前体相互作用以形成前体，所形成的前体通过在氧化物表面上形成固体残留副产物来去除氧化硅。此反应降低了被暴露的氮化硅区相比被暴露的氧化硅区的选择性。尽管引入一些氢可能是有用的，但是在根据实施例的蚀刻工艺100期间，还可能没有或基本上没有进入等离子体区域的氢的流。
一般而言，可利用具有两个串连的远程等离子体区域的各种腔室配置来执行本文所述的蚀刻工艺100。第一远程等离子体区域在第二远程等离子体区域的上游，并且第二远程等离子体区域在基板处理区域的上游。在图1的示例中，远程等离子体系统表示第一远程等离子体区域，并且远程等离子体区域是第二远程等离子体区域。使含氮和氧的前体流入第一远程等离子体区域，并且使含氟前体流入第二远程等离子体区域。根据实施例，含氮和氧的前体可能更具电负性，并且可能需要一些额外的等离子体激发来产生具有延伸的工艺窗口(processwindow)的蚀刻工艺100。
第一远程等离子体区域用于形成第一远程等离子体，通常将使用第一远程等离子体功率来形成此第一远程等离子体，第一远程等离子体功率大在第二远程等离子体区域中形成的第二远程等离子体的第二远程等离子体功率。由此，通常使含氟前体流入第二远程等离子体区域(在第一远程等离子体区域的下游，并且在基板处理区域的上游)降低了离子浓度，并且允许喷淋头或离子抑制器(ionsuppressor)元件进一步降低基板处理区域中的离子密度。基板处理区域中的降低的离子浓度进一步增加蚀刻工艺100的氮化硅选择性。
通过将含氟前体引入第二远程等离子体区域，同时将含氮和氧的前体引入上游的第一远程等离子体区域，可符合人意地延伸工艺窗口。也可使一些含氟前体流入第一远程等离子体区域，并且简单地延伸可用的参数空间(parameterspace)，以微调被暴露材料的蚀刻均匀性、蚀刻选择性和蚀刻速率。类似地，可使一些含氮和氧的前体在不首先通过第一远程等离子体区域的情况下就直接流入第二远程等离子体区域。载气(例如，氦)可用于携带进入第一远程等离子体区域和第二远程等离子体区域中的任一者或两者的前体中的每一种。
现请参见图2，图2是根据实施例的氮化硅选择性蚀刻工艺200的流程图。在第一操作之前，结构被形成在经图案化的基板中。所述结构拥有被暴露的氮化硅和硅(如，单晶硅或多晶硅)区。接着在操作210中，将基板递送到基板处理区域中。
使一氧化二氮(N2O)流入第一远程等离子体区域(操作220)。在远程等离子体区域中形成的第一远程等离子体中激发N2O。在实施例中，第一远程等离子体区域可在基板处理腔室外部或内部。在第一等离子体区域中的第一等离子体中激发含氮和氧的前体以形成氧化等离子体流出物。可将三氟化氮的流引入第二远程等离子体区域(操作225)，并且在第二等离子体中激发此三氟化氮的流以形成蚀刻等离子体流出物(包括自由基-氟)。一般而言，使含氮和氧的前体流入第一远程等离子体区域，并且使含氟前体流入第二等离子体区域。含氮和氧的前体以及含氟前体可以是与前述相同的实施例。接着在基板处理区域中结合氧化等离子体流出物和蚀刻等离子体流出物(操作230)。在进入基板处理区域之前，氧化等离子体流出物和蚀刻等离子体流出物彼此不相遇。第一等离子体区域与第二等离子体区域彼此相异。根据实施例，第一等离子体区域与第二等离子体区域仅通过基板处理区域流体地耦接。
选择性地蚀刻经图案化的基板(操作235)，使得能以比去除被暴露的硅更高的速率来选择性地去除被暴露的氮化硅。如前述，已发现氮和氧的存在剧烈地氧化被暴露的硅，从而导致硅域基本上无法由根据实施例的含氟等离子体流出物蚀刻。多个被暴露的氧化硅区域也可存在于经图案化的基板上，并且被暴露的氧化硅区也可以是基本上不可蚀刻的。从基板处理区域中去除反应性化学物质，并且接着从处理区域中移除基板(操作245)。
所述方法也包括下列步骤：当含氟前体以及含氮和氧的前体在远程等离子体区域中时，将功率施加至所述含氟前体以及含氮和氧前体以生成等离子体流出物。如本领域技术人员所领会，等离子体可包括许多带电物质和中性物质，包括自由基和离子。可使用已知的技术(例如，RF技术、容性耦合技术、感性耦合技术)来生成等离子体。在实施例中，以500瓦与5千瓦之间的等级来将第一远程等离子体功率施加至第一远程等离子体区域。在实施例中，可使用感性线圈来施加第一远程等离子体功率，在这种情况下，第一远程等离子体将被称为感性耦合的等离子体(ICP)。根据实施例，能以50瓦与500瓦之间的等级来将第二远程等离子体功率施加至第二远程等离子体区域。根据实施例，第二远程等离子体的功率可以是第一远程等离子体功率的约20％或更小。在实施例中，第二远程等离子体功率可以是容性耦合的等离子体。第一远程等离子体区域、第二远程等离子体区域以及基板处理区域中的压力可在约0.01托(Torr)与30托之间，或者在实施例中，在约0.1托与15托之间。第一远程等离子体区域和第二远程等离子体区域各自都设置在基板处理区域的远程。第二远程等离子体区域流体地耦接至第一远程等离子体区域和基板处理区域中的每一个。除了经过第二远程等离子体区域，第一远程等离子体区域不流体地耦接至基板处理区域。第二远程等离子体区域可通过离子抑制器和/或喷淋头而与气体反应区域分开。
在不希望使权利要求的范围束缚于理论机制(这些理论机制可能或可能不完全正确)的情况下，对可能的机制的一些讨论可证明是有益的。在实施例中，包括了自由基-氧使自由基-氟能选择性地蚀刻硅和氮化硅，同时使氧化硅基本上不被蚀刻。根据实施例，通过将含氮和氧的前体、含氟前体以及含氟前体递送到相异的远程等离子体区域中，同时产生了自由基-氟以及自由基-氮-氧。申请人假设，某浓度的自由基-氟片段、氟离子和原子被生成，并被递送到基板处理区域中。申请人进一步假设，自由基-氮-氧被同时递送至基板处理区域。自由基-氮-氧可与附近表面区域中的被暴露的硅区反应以产生氧化硅层，因此，被暴露的硅区以与当使用自由基-氧时的被暴露的氧化硅区类似的方式来表现。结果，本文概述的蚀刻方法实现了氮化硅相对于硅和氧化硅两者的选择性。
在实施例中，可使用如“示例性设备”段落中描述的离子抑制器来提供自由基和/或中性物质，以便选择性地蚀刻氮化硅。离子抑制器也可称为离子抑制元件。在实施例中，例如离子抑制器可用于过滤蚀刻等离子体流出物(包括自由基-氟)，从而选择性地蚀刻氮化硅。离子抑制器可被包括在本文中所描述的每一个示例性工艺中。使用等离子体流出物，可实现氧化硅相对于硅和氧化硅的蚀刻速率选择性。
可使用离子抑制器来提供自由基浓度比离子浓度高的反应性气体。离子抑制器的功能在于显著地减少或基本上消除从等离子体生成区域行进至基板的带离子电荷物质(ionicallychargedspecies)。当在离子抑制器的另一侧上的远程等离子体区域中激发等离子体期间，可在基板处理区域中使用朗缪尔(Langmuir)探针来测量电子温度。在实施例中，电子温度可低于0.5eV、低于0.45eV、低于0.4eV或低于0.35eV。通过定位在基板处理区域与远程等离子体区域之间的喷淋头和/或离子抑制器的存在，允许这些极低的电子温度值。不带电的中性物质和自由基物质可通过离子抑制器中的开口以在基板处反应。由于由离子抑制器过滤或去除了等离子体带电粒子中的大部分，因此在蚀刻工艺期间基板不一定被偏置。相比包括溅射和轰击的常规的等离子体蚀刻工艺，使用自由基和其他中性物质的此类工艺减少了等离子体损害。离子抑制器有助于将反应区域中的离子物质的浓度控制在辅助此工艺的水平。本发明的实施例也比常规的湿法蚀刻工艺(其中，液体的表面张力可导致小型特征的弯折与剥离)更有利。
在描述示例性处理腔室和系统的过程中公开了附加的工艺参数。
示例性处理设备
图3A是根据实施例的基板处理腔室1001。远程等离子体系统1010可处理含氟前体，此含氟前体接着行进通过气体入口组件1011。在气体入口组件1011内两个相异的气体供应通道是可见的。第一通道1012传导刚通过远程等离子体系统1010(RPS)的前体，而第二通道1013则可传导绕过远程等离子体系统1010的前体。第一通道1012传导含氮和氧的前体，而第二通道1013传导含氟前体。
盖(或导电的顶部)102与穿孔的隔件1053之间示出有位于它们之间的绝缘环1024，此绝缘环1024允许相对于穿孔的隔件1053而将AC电位施加至盖1021。AC电位在腔室等离子体区域1020中点燃等离子体。自由基-氮-氧(即，经等离子体激发的含氮和氧的前体)可行进通过第一通道1012而进入腔室等离子体区域1020，并且可进一步在腔室等离子体区域1020由等离子体激发。含氟前体流经第二通道1013，并且仅由腔室等离子体区域1020而不由RPS1010激发。穿孔的隔件(又称为喷淋头)1053将腔室等离子体区域1020与在喷淋头1053下方的基板处理区域1070分开。喷淋头1053允许存在于腔室等离子体区域1020中的等离子体避免直接激发基板处理区域1070中的气体，同时仍允许受激发物质从腔室等离子体区域1020行进至基板处理区域1070内。
喷淋头1053定位在腔室等离子体区域1020与基板处理区域1070之间，并且允许在远程等离子体系统1010和/或腔室等离子体区域1020内产生的等离子体流出物(前体或其他气体的受激发的衍生物)通过跨过板的厚度的多个通孔1056。喷淋头1053也具有一个或多个空心的容积1051，在实施例中，以蒸气或气体形式的前体(诸如，在RPS1010中所激发的氧化等离子体流出物)填充此空心的容积1051，所述前体通过小孔1055进入基板处理区域1070，但不直接进入腔室等离子体区域1020。可将小孔1055描述为盲孔(blindhole)，以表达所述小孔1055不像通孔1056那样直接流体地耦接至腔室等离子体区域1020。在此公开的实施例中，喷淋头1053比通孔1056的最小直径1050的长度更厚。为了维持从腔室等离子体区域1020渗透至基板处理区域1070的受激发物质的显著的浓度，可通过形成通孔1056的、部分地穿过喷淋头1053的较大直径的部分来限制通孔的最小直径1050的长度1026。在实施例中，通孔1056的最小直径1050的长度可与通孔1056的最小直径的数量级相同，或数量级更小。
如图3A所示，喷淋头1053可配置成充当离子抑制器。或者，可包括分开的处理腔室元件(未示出)，此分开的处理腔室元件抑制进入基板处理区域1070的离子浓度。盖1021和喷淋头1053可分别充当第一电极和第二电极，使得盖1021和喷淋头1053可接收不同的电压。在这些配置中，可将电功率(如，RF功率)施加至盖1021、喷淋头1053或这两者。例如，可将电功率施加至盖1021，同时使喷淋头1053(用作离子抑制器)接地。基板处理系统可包括RF生成器，此RF生成器将电功率提供至盖和/或喷淋头1053。施加至盖1021的电压可促进腔室等离子体区域1020内的等离子体的均匀分布(即，减少局部化的等离子体)。为了能在腔室等离子体区域1020中形成等离子体，绝缘环1024可将盖1021与喷淋头1053电绝缘。绝缘环1024可由陶瓷制成，并且可具有高击穿电压以避免产生火花。基板处理腔室的、接近刚才所述的容性耦合的等离子体部件的的部分可进一步包括冷却单元(未示出)，所述冷却单元包括一个或多个冷却流体通道，以便利用循环冷却剂(如，水)来冷却暴露于等离子体的表面。
在所示出的实施例中，喷淋头1053可(经由通孔1056)分配工艺气体(所述工艺气体包括氧、氟和/或氮)和/或在由腔室等离子体区域1020中的等离子体激发时的此类工艺气体的等离子体流出物。根据实施例，被引入远程等离子体系统1010和/或腔室等离子体区域1020的工艺气体可含有氟(例如，F2、NF3或XeF2)。工艺气体也可包括载气，诸如，氦、氩、氮(N2)等。等离子体流出物可包括工艺气体的离子化或中性衍生物，并且在本文中也可称为自由基氟，所述自由基氟是指所引入的工艺气体的原子组分。
通孔1056配置成在允许不带电的中性或自由基物质通过喷淋头1053而进入基板处理区域1070的同时，抑制带离子电荷物质离开腔室等离子体区域1020的迁移。这些不带电物质可包括高度反应性物质，所述高度反应性物质可通过通孔1056与较不具反应性的载气一起输送。如上文所提及，可减少离子物质通过通孔1056的迁移，并且在一些示例中，可完全抑制或基本上消除离子物质通过通孔1056的迁移。控制通过喷淋头1053的离子物质的量可提供对与位于下方晶片基板接触的气体混合物的增加的控制，进而增进对气体混合物的沉积和/或蚀刻特性的控制。例如，对气体混合物的离子浓度的调整可显著地改变此气体混合物的蚀刻选择性(如，氮化硅：硅蚀刻比例)。
根据实施例，通孔1056的数目可在约60个与约2000个之间。通孔1056可具有各种形状，但最容易地被制成圆形。在实施例中，通孔1056的最小直径1050可在约0.5mm与约20mm之间，或在约1mm与约6mm之间。在选择通孔的截面形状方面也具有灵活性，所述通孔可被制成锥状、柱状或这两种形状的组合。在实施例中，用于将未激发的前体引入基板处理区域1070的小孔1055的数目可在约100与约5000之间，或在约500与约2000之间。小孔1055的直径可在约0.1mm与约2mm之间。
通孔1056可配置成控制经等离子体活化的气体(即，离子、自由基和/或中性物质)通过喷淋头1053。例如，可控制孔的深宽比(即，孔直径比长度)和/或孔的几何尺寸，从而减少通过喷淋头1053的经活化的气体中的带离子电荷物质的流。喷淋头1053中的通孔1056可包括面向腔室等离子体区域1020的锥形部分以及面向基板处理区域1070的柱状部分。可设定柱状部分的比例和尺度以控制进入基板处理区域1070的离子物质的流。可调整的电偏置也可作为用于控制穿过喷淋头1053的离子物质的流的附加手段而施加至喷淋头1053。
或者，通孔1056在朝向喷淋头1053的顶表面处可具有较小的内径(innerdiameter，ID)，并且在朝向喷淋头1053的底表面处可具有较大的ID。通孔1056在朝向喷淋头1053的顶表面处可具有较大的内径，并且在朝向喷淋头1053的底表面处可具有较小的内径。此外，通孔1056的底缘可经倒角，以便在等离子体流出物离开喷淋头时有助在基板处理区域1070中均匀地分布等离子体流出物，并且促进等离子体流出物和前体气体的均匀分布。较小的ID可置于沿通孔1056的多个位置处，并且仍允许喷淋头1053减小基板处理区域1070内的离子密度。离子密度的减小源自在离子进入基板处理区域1070之前与壁的碰撞数量的增加。每一次碰撞增加了通过来自壁的电子的获取或失去而使离子中性化的概率。一般而言，通孔1056的较小的ID可在约0.2mm与约20mm之间。根据实施例，较小的ID可在约1mm与约6mm之间，或在约0.2mm与约5mm之间。此外，通孔1056的深宽比(即，较小的ID比通孔长度)可以是大约1至20。通孔的较小的ID可以是沿通孔的长度发现的最小的ID。通孔1056的截面形状一般可以是柱状、锥状或这些形状的任何组合。
图3B是根据实施例的、与处理腔室一起使用的喷淋头1053的底视图。喷淋头1053对应于图3A中所示的喷淋头。通孔1056被描绘成在喷淋头1053底部具有较大的内径(ID)，并且在顶部具有较小的ID。小孔1055在喷淋头的表面上甚至在通孔1056之间基本上均匀地分布，这有助在实施例中提供更均匀的混合。
当含氟等离子体流出物和含氧等离子体流出物穿过喷淋头1053中的通孔1056而到达时，可由基板处理区域1070内的基座(未示出)支撑示例性经图案化的基板。在实施例中，尽管可装备基板处理区域1070以支持用于其他工艺(诸如，固化)的等离子体，但是在蚀刻经图案化的基板期间，无等离子体存在。
可在喷淋头1053上方的腔室等离子体区域1020中或在喷淋头1053下方的基板处理区域1070中点燃等离子体。等离子体存在于腔室等离子体区域1020中，以从含氟前体的流入物中产生自由基-氟。典型地在射频(RF)范围中的AC电压可施加至处理腔室的导电顶部(盖1021)与喷淋头1053之间，以便在沉积期间在腔室等离子体区域1020中点燃等离子体。RF电源生成13.56MHz的高RF频率，但也单独地或结合13.56MHz频率而生成其他频率。
当开启基板处理区域1070中的底部等离子体以固化膜或清洁形成基板处理区域1070边界的内表面时，顶表面可保持在低功率或无功率。可通过在喷淋头1053与基座之间或在喷淋头1053与腔室的底部之间施加AC电压以在基板处理区域1070中点燃等离子体。可在等离子体存在的同时，将清洁气体引入基板处理区域1070。
基座可具有热交换通道，热交换流体流过所述热交换通道以控制基板的温度。此配置允许冷却或加热基板温度以维持相对低的温度(从-20℃直到约120℃)。热交换流体可包含乙二醇与水。可使用嵌入式单环路嵌入式加热器元件来电阻式加热基座的晶片支撑浅盘(优选地，铝、陶瓷或它们的组合)以实现相对高的温度(从约120℃直到约1100℃)，所述嵌入式单环路嵌入式加热器元件配置成以平行的同心圆的形式完成两个完整的转向。加热器元件的在外部分可邻接支撑浅盘的外周而延伸，而在内部分在具有较小半径的同心圆的路径上延伸。至加热器元件的配线穿过基座的主干。
腔室等离子体区域或远程等离子体系统中的区域可称为远程等离子体区域。在实施例中，自由基前体(例如，自由基-氟及自由基-氮-氧)在远程等离子体区域中形成，并行进到基板处理区域中，在所述基板处理区域中，此组合优先蚀刻氮化硅。在实施例中，等离子体功率可基本上仅被施加至远程等离子体区域以确保不在基板处理区域中进一步激发自由基-氟以及自由基-氮-氧(两者被共同称为等离子体流出物)。
在采用腔室等离子体区域的实施例中，在基板处理区域中与沉积区域分隔的区段中生成被激发的等离子体流出物(或在自由基-氮-氧的情况下，进一步激发被激发的等离体流出物)。沉积区域(在本文中也称作基板处理区域)是等离子体流出物混合并反应以蚀刻经图案化的基板(例如，半导体晶片)的地方。被激发的等离子体流出物也可伴随着惰性气体(在示例性示例中，惰性气体为氦气)。在本文中可将基板处理区域描述为在对经图案化的基板的蚀刻工艺期间是“无等离子体(plasma-free)”的。“无等离子体”不一定意味着此区域缺乏等离子体。由于通孔1056的形状和尺寸，在等离子体区域内产生的相对低浓度的离子化物质和自由电子确实行进穿过隔件(喷淋头/离子抑制器)中的孔隙(孔口)。在一些实施例中，基板处理区域内基本上没有离子化物质和自由电子的浓度。腔室等离子体区域中的等离子体的边界难以界定，并且可能通过喷淋头中的孔口而侵入基板处理区域。在感性耦合的等离子体的情况下，少量的离子化可直接在基板处理区域内产生。此外，可在基板处理区域中产生低强度等离子体，而不消除形成的膜的特征。在产生被激发的等离子体流出物期间造成等离子体具有比腔室等离子体区域(就此而言，或远程等离子体区域)低得多的强度离子密度的所有原因不背离本文中所使用的“无等离子体”的范围。
在实施例中，能以约5sccm与约500sccm之间、约10sccm与约300sccm之间、约25sccm与约200sccm之间、约50sccm与约150sccm之间、或约75sccm与约125sccm之间的速率来使三氟化氮(或另一含氟前体)流入腔室等离子体区域1020。在实施例中，能以大于或等于约250sccm、大于或等于约500sccm、大于或等于约1slm、大于或等于约2slm或大于或等于约5slm的速率来使一氧化二氮(或另一含氮和氧的前体)流入远程等离子体区域1010并接着流入腔室等离子体区域1020(顺序地)。
进入腔室的含氟前体以及含氮和氧的前体的组合的流速在总气体混合物的体积方面可占0.05％至约20％；其余部分是载气。根据实施例，使含氟前体以及含氮和氧的前体流入远程等离子体区域，但是等离子体流出物具有相同的体积流量比。在含氟前体的情况下，可在含氟气体之前先启动使净化气体或载气进入远程等离子体区域以稳定远程等离子体区域内的压力。
施加至第一远程等离子体区域和第二远程等离子体区域的等离子体功率可以是各种频率的或可以是多个频率的组合，并且在这两个远程等离子体之间可以不同。在示例性处理系统中，由在盖1021与喷淋头1053之间传递的RF功率来提供第二远程等离子体。在实施例中，施加至第一远程等离子体区域(所述此示例中的RPS1010)的RF功率可在约250瓦与约15000瓦之间、在约500瓦与约5000瓦之间、或在约1000瓦与约2000瓦之间。根据实施例，施加至第二远程等离子体区域(所述此示例中的腔室等离子体区域1020)的RF功率可在约10瓦与约1500瓦之间、在约20瓦与约1000瓦之间、在约50瓦与约500瓦之间、或在约100瓦与约200瓦之间。根据实施例，在示例性处理系统中应用的RF频率可以是低于约200kHz的低RF频率、在约10MHz与约15MHz之间的高RF频率、或大于或等于约1GHz的微波频率。
在要求保护的蚀刻工艺期间，基板的温度可在约-30℃与约150℃之间。已发现对在此范围内的较低的温度，蚀刻速率较高。在实施例中，在本文中所述的蚀刻工艺期间的基板温度为约-20℃、0℃或更高、约5℃或更高，或者约10℃或更高。在实施例中，基板温度可以低于或等于约150℃、低于或等于约100℃、低于或等于约50℃、低于或等于约30℃、低于或等于约20℃、低于或等于约15℃，或者低于或等于约10℃。温度或压力的任何上限可与下限组合以形成附加的实施例。
在载气和等离子体流出物流入基板处理区域1070期间，可将基板处理区域1070、远程等离子体系统1010或腔室等离子体区域1020维持在各种压力下。基板处理区域内的压力可以低于或等于约50托、低于或等于约30托、低于或等于约20托、低于或等于约10托或低于或等于约5托。在实施例中，压力可以高于或等于约0.01托、高于或等于约0.1托、高于或等于约0.2托、高于或等于约0.5托或高于或等于约1托。压力的下限可与压力的上限组合以形成附加的实施例。数据显示，蚀刻速率的增加与工艺压力以及相关联的负载效应的增加有关，这对于给定的工艺流程可能是或可能不是期望的或可容忍的。
在实施例中，基板处理腔室1001可整合到各种多处理平台中，所述多处理平台包括可从位于美国加州圣克拉拉市的应用材料公司(AppliedMaterials,Inc.)获得的ProducerTMGT、CenturaTMAP和EnduraTM平台。此类处理平台能够在不破真空的情况下执行若干处理操作。可实现本文所公开的方法的处理腔室可包括电介质蚀刻腔室或各种化学气相沉积腔室，以及其他类型的腔室。
处理腔室可并入用于生产集成电路芯片的较大型制造系统。图4示出根据实施例的一个此类沉积、烘烤和固化腔室的系统1101。在附图中，一对前开式晶片盒(frontopeningunifiedpod，FOUP)1102供应基板(例如，300mm直径的晶片)，所述基板由机械臂1104接收，并且在被置入晶片处理腔室1108a-f中的一个晶片处理腔室之前被置入低压力保持区域1106中。可使用第二机械臂1110将基板晶片从低压力保持区域1106传输至晶片处理腔室1108a-f并往回传输。每一个晶片处理腔室1108a-f可被装备成执行多个基板处理操作，所述基板处理操作包括本文所述的干法蚀刻工艺，以及循环层沉积(CLD)、原子层沉积(ALD)、化学气相沉积(CVD)、物理气相沉积(PVD)、蚀刻、预清洁、脱气、定向以及其他基板工艺。
晶片处理腔室1108a-f可包括用在基板晶片上沉积、退火处理、固化和/或蚀刻电介质膜的一个或多个系统部件。在一个配置中，两对处理腔室(如，1108c-d以及1108e-f)可用在基板上沉积电介质材料，而第三对处理腔室(如，1108a-b)可用于蚀刻所沉积的电介质。在另一个配置中，所有三对腔室(如，1108a-f)可配置成在基板上蚀刻电介质膜。可在与实施例中所示的制造系统分开的腔室上执行所描述的工艺中的任何一种或多种。
可由系统控制器来控制基板处理系统。在示例性实施例中，系统控制器包括硬盘驱动器、软盘驱动器和处理器。处理器含有单板计算机(SBC)、模拟和数字输入/输出板、接口板以及步进电机控制器板。CVD系统的各种部件符合欧洲Versa模块(VersaModularEuropean，VME)标准，此标准定义了板、卡片机架(cardcage)以及连接器的尺度和类型。VME标准也将总线结构定义为具有16位数据总线以及24位地址总线的总线结构。
系统控制器1157用于控制电机、阀、流量控制器、电源以及用于执行本文所述的工艺配方所需的其他功能。气体操纵系统1155也可由系统控制器1157控制以将气体引入到晶片处理腔室1108a-f中的一个或全部。系统控制器1157可依赖于来自光学感测器的反馈来确定并且调整气体操纵系统1155和/或晶片处理腔室1108a-f中的可移动机械组件的位置。机械组件可包括机器人、节流阀和基座，可由电机在系统控制器1157的控制下来移动这些机械组件。
在示例性实施例中，系统控制器1157包括硬盘驱动器(存储器)、USB端口、软盘驱动器和处理器。系统控制器1157包括模拟和数字输入/输出板、接口板以及步进电机控制器板。由系统控制器1157控制多腔室处理系统1101的各个部件，所述多腔室处理系统1101含有基板处理腔室1001。系统控制器执行计算机程序形式的系统控制软件，所述计算机程序存储在诸如硬盘、软盘或闪存指状驱动器之类的计算机可读介质上。也可使用其他形式的存储器。计算机程序包括指令集，所述指令集指定特定工艺的时序、气体混合物、腔室压力、腔室温度、RF功率等级、基座位置和其他参数。
可使用由控制器执行的计算机程序产品来实现用在基板上蚀刻、沉积或其他方式处理膜的工艺或用于清洁腔室的工艺。能以任何常规的计算机可读编程语言来撰写计算机程序代码：例如68000汇编语言、C、C++、Pascal、Fortran或其他语言。使用常规的文本编辑器将适合的程序代码输入到单个文件或多个文件中，并且这些程序代码被存储或具体化在计算机可使用介质(诸如，计算机的存储器系统)中。如果以高级语言来输入代码文本，则代码经编译，并且所得的编译器代码随后与预编译的(Microsoft)库例程的目标代码链接。为了执行此经链接、编译的目标代码，系统用户调用此目标代码，从而使计算机系统加载存储器中的代码。随后，CPU读取并且执行此代码以执行程序中所标识的任务。
使用者与控制器之间的接口可以经由触敏监视器，并且也可包括鼠标和键盘。在使用两个监视器的一个实施例中，一个监视器安装在清洁室墙上供操作者使用，而另一个监视器在墙后供维修技术人员使用。这两个监视器可同时显示相同的信息，在这种情况下，一次仅一个监视器配置成接受输入。为了选择特定的屏幕或功能，操作者以手指或鼠标触碰显示屏上的指定区域。被触碰的区域改变此区域的高亮色，或显示新菜单或屏幕，从而确认操作者的选择。
如本文中所使用，“基板”可以是具有或不具有形成在其上的多个层的支撑基板。经图案化的基板可以是具有各种掺杂浓度和掺杂轮廓的绝缘体或半导体，例如，可以是在集成电路的制造中所使用类型的半导体基板。经图案化的基板的被暴露的“硅”主要是Si，但也可包括少量浓度的其他元素组分(诸如，氮、氧、氢和碳。经图案化的基板的被暴露的“氮化硅”主要是Si3N4，但是也可包括少量浓度的其他元素组分(诸如，氧、氢和碳)。经图案化的基板的被暴露的“氧化硅”主要是SiO2，但是也可包括少量浓度的其他元素组分(诸如，氮、氢和碳)。在一些实施例中，本文中所述讨论的氧化硅膜基本上由硅与氧构成。
术语“前体”用于指参与反应以从表面去除材料或将材料沉积到表面上的任何工艺气体。“等离子体流出物”描述离开腔室等离子体区域并且进入基板处理区域的气体。等离子体流出物处于“激发态”，其中，气体分子中的至少一些处于振动激发态、离解态和/或电离态。“自由基前体”用于描述参与反应以从表面去除材料或在表面上沉积材料的等离子体流出物(离开等离子体的、处于激发态的气体)。“自由基-氟”(或“自由基-氧”或“自由基-氮-氧”)是含有氟(或氧或氮与氧)的自由基前体，但是可含有其他元素组分。短语“惰性气体”是指在蚀刻工艺期间或之后不在膜中形成化学键的任何气体。示例性惰性气体包括稀有气体，但可包括其他气体，只要当(一般而言)在膜中陷捕到痕量时没有化学键形成即可。
贯穿全文使用术语“间隙(gap)”与“沟槽(trench)”不暗指经蚀刻的几何结构具有大的水平深宽比。从表面上方观察，沟槽可呈现出圆形、椭圆形、多边形、矩形或各种其他形状。沟槽可以是围绕材料岛状物的壕沟的形状。术语“过孔(via)”是指低深宽比的沟槽(从上方观察)，所述过孔可以或可以不由金属填充而形成竖直的电连接。如本文中所使用，共形的蚀刻工艺指的是以与表面相同的形状大体上均匀地去除表面上的材料，即，经蚀刻的层的表面与蚀刻前的表面大体上平行。本领域技术人员将领会，经蚀刻的界面可能不会是100％共形的，因此，术语“大体上”允许可接受的公差。
已公开了若干实施例，本领域技术人员将领会，可使用多种修改、替代构造与等效方案而不背离所公开实施例的精神。此外，未描述许多公知的工艺和元件以避免不必要地使本发明含糊。因此，上述描述不应被视为限制本发明的范围。
在提供数值范围的情况下，除非上下文另外清楚地指明，否则应理解，在下限的单位的十分之一的程度上，那个范围的上、下限之间的每一个介于中间的值也专门被公开。涵盖了所陈述的范围中的任何陈述的值或介于中间的值以及与那个所陈述范围中的任何其他陈述的值或介于中间的值之间的每一个较小的范围。这些较小的范围的上限值与下限值可独立地被包括在此范围中或排除在此范围外，并且在限值中的任一者、两者或没有限值被包括在较小的范围中的情况下，每一个范围也被涵盖在本发明内，除非在所陈述的范围中有特别排除的限值。在所陈述的范围包括限值中的一者或两者的情况下，排除了那些被包括的限值中的任一者或两者的范围也被包括。
如本文中和所附权利要求书中所使用，除非上下文另外清晰地指定，否则单数形式的“一”、“一个”以及“所述”包括复数指示物。因此，例如，对“一工艺”的引用包括多个此类工艺，并且对”所述电介质材料”的引用包括对本领域技术人员所知的一种或多种电介质材料以及等效物等的引用。
此外，当在此说明书以及所附权利要求书中使用时，单词“包含”(“comprise”、“comprising”)、“包括”(“include”、“including”以及“includes”)旨在指定所陈述的特征、整数、部件或步骤的存在，但是它们不排除一个或多个其他特征、整数、部件、步骤、动作或组的存在或附加。

Claims (15)

1.一种蚀刻经图案化的基板的方法，所述方法包含以下步骤：
将所述经图案化的基板传送到基板处理腔室的基板处理区域中，其中所述经图案化的基板具有被暴露的氮化硅；
当在第一远程等离子体区域中形成第一远程等离子体时，使含氮和氧的前体流入所述第一远程等离子体区域以产生氧化等离子体流出物，所述第一远程等离子体区域流体地耦接至第二远程等离子体区域；
当在所述第二远程等离子体区域中形成第二远程等离子体时，使含氟前体流入所述第二等离子体区域以产生蚀刻等离子体流出物，所述第二远程等离子体区域流体地耦接至所述基板处理区域，其中所述氧化等离子体流出物在所述第二远程等离子体中进一步被激发；
使所述氧化等离子体流出物和所述蚀刻等离子体流出物中的每一者通过喷淋头中的通孔而流入所述基板处理区域；以及
蚀刻所述被暴露的氮化硅，其中所述经图案化的基板进一步包含被暴露的硅。
2.如权利要求1所述的方法，其中所述含氮和氧的前体包含N2O、NO、NO2或N2O2中的一种。
3.如权利要求1所述的方法，其中所述第一远程等离子体是感性耦合的等离子体。
4.如权利要求1所述的方法，其中所述第二远程等离子体是容性耦合的等离子体。
5.如权利要求1所述的方法，其中所述蚀刻操作的选择性(被暴露的氮化硅：被暴露的硅)大于或约为20：1。
6.如权利要求1所述的方法，其中所述含氟前体包含NF3。
7.如权利要求1所述的方法，其中所述含氟前体包含选自由以下各项组成的组的前体：氟化氢、原子氟、双原子氟、四氟化碳和二氟化氙。
8.一种蚀刻经图案化的基板的方法，所述方法包含以下步骤：
将所述经图案化的基板传送到基板处理腔室的基板处理区域中，其中所述经图案化的基板包含被暴露的氮化硅和被暴露的硅；
当在第一远程等离子体系统中形成第一远程等离子体时，使含氮和氧的前体流入所述第一远程等离子体区域以产生氧化等离子体流出物；
当在第二远程等离子体区域中形成第二远程等离子体时，使含氟前体流入所述第二远程等离子体区域以产生自由基-氟，所述第二远程等离子体区域与所述第一远程等离子体区域相异；
在所述基板处理腔室中将所述氧化等离子体流出物与所述自由基-氟结合，其中使所述氧化等离子体流出物和所述自由基-氟流过多通道喷淋头的多个分开的通道；以及
以比蚀刻所述被暴露的硅更大的蚀刻速率来选择性地蚀刻所述被暴露的氮化硅。
9.如权利要求8所述的方法，其中在进入所述基板处理区域之前，所述自由基-氟和所述氧化等离子体流出物彼此不相遇。
10.如权利要求8所述的方法，其中所述含氮和氧的前体由氮和氧组成。
11.如权利要求8所述的方法，其中所述含氮和氧的前体包含N2O、NO、NO2或N2O2中的一种。
12.如权利要求8所述的方法，其中所述第一远程等离子体是感性耦合的等离子体，并且所述第二远程等离子体是容性耦合的等离子体。
13.如权利要求8所述的方法，其中所述含氟前体包含NF3。
14.如权利要求8所述的方法，其中所述含氟前体包含选自由以下各项组成的组的前体：氟化氢、原子氟、双原子氟、四氟化碳和二氟化氙。
15.一种蚀刻经图案化的基板的方法，所述方法包含以下步骤：
将所述经图案化的基板传送到基板处理腔室的基板处理区域中，其中所述经图案化的基板包含被暴露的氮化硅和被暴露的硅；
使N2O流入第一远程等离子体以产生氧化等离子体流出物，所述第一远程等离子体设置在所述基板处理腔室外部；
使NF3流入第二远程等离子体以产生含氟的等离子体流出物，所述第二远程等离子体与所述第一远程等离子体分开，其中所述NF3在所述第一远程等离子体中基本上不被激发；
在所述基板处理腔室中将所述氧化等离子体流出物与所述含氟等离子体流出物结合；
相对于蚀刻所述被暴露的硅来选择性地蚀刻所述被暴露的氮化硅。
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