KR930003154A - 불휘발성 반도체기억장치 - Google Patents

불휘발성 반도체기억장치 Download PDF

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Publication number
KR930003154A
KR930003154A KR1019920013137A KR920013137A KR930003154A KR 930003154 A KR930003154 A KR 930003154A KR 1019920013137 A KR1019920013137 A KR 1019920013137A KR 920013137 A KR920013137 A KR 920013137A KR 930003154 A KR930003154 A KR 930003154A
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South Korea
Prior art keywords
word line
memory device
group
memory cell
semiconductor substrate
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KR1019920013137A
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KR960003398B1 (ko
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시게루 아츠미
스미오 다나카
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사토 후미오
가부시키가이샤 도시바
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)

Abstract

내용 없음.

Description

불휘발성 반도체기억장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 EEPROM의 1실시예를 나타낸 블럭회로도,
제2도는 제1도중의 메모리셀 어레이 및 행디코더회로의 일부를 나타낸 회로도.

Claims (6)

  1. 전기적 소거·재기록가능한 메모리셀 트랜지스터(11)군이 행렬모양으로 배열된 메모리셀 어레이(1)와, 이 메모리셀 어레이(1)의 행방향의 각 메모리셀 트랜지스터의 게이트에 공통으로 접속된 워드선(12)군, 상기 메모리 셀 어레이(1)의 열방향의 각 메모리셀 트랜지스터의 드레인에 공통으로 접속된 비트선(13)군 및, 상기 워드선(12)군에 대응해서 접속되어 데이터 소거모드시에 워드선(12)에 부전압을 인가하는 행디코더회로(2)를 구비한 불휘발성 반도체기억장치에 있어서, 상기 행디코더회로(2)가 상기 워드선(12)에 접속된 N채널 트랜지스터(24,42,44)를 갖추고 있고, 이 N채널 트랜지스터는 반도체기판내의 P웰(33)상에 형성됨과 더불어 소오스·기판상호가 접속되어 있으며, 이 P웰(33)에는 데이터소거모드스에는 부전압, 그 이외의 동작모드시에는 접지전위가 인가되는 것을 특징으로 하는 불휘발성 반도체기억장치.
  2. 제1항에 있어서, 반도체기판으로서 접지전위가 인가되는 P형 반도체기판(30)이 사용되고 있고, 상기 P웰(33)은 상기 P형 반도체기판(30)내의 N웰(31)내에 형성되어 상기 P형 반도체기판(30)으로부터 전기적으로 분리되어 있으며, 상기 메모리셀 트랜지스터(11)군은 상기 P형 반도체기판(30)상에 직접 형성되어 있는 것을 특징으로 하는 불휘발성 반도체기억장치.
  3. 제1항에 있어서, 상기 N채널 트랜지스터(24)에 P채널 트랜지스터 (23)가 접속된 CMOS인버터에 의해 워드선 구동기가 구성되고, 상기 P채널 트랜지스터(23)의 소오스·기판에는 데이터소거모드시에는 접지전위, 그이외의 동작모드시에는 정(正)전압이 인가되는 것을 특징으로 하는 불휘발성 반도체기억장치.
  4. 제1항 내지 제3항 중 어느 한 항에 있어서, 상기 행디코더회로(2)가 데이터소거모드시에 상기 워드선(12)군을 비선택상태로 하는 것을 특징으로 하는 불휘발성 반도체기억장치.
  5. 제1항 내지 제3항중 어느 한 항에 있어서, 상기 행디코더회로(2)가 데이터 소거모드시에 상기 워드선(12)군을 비선택상태로 하는 것을 특징으로 하는 불휘발성 반도체 기억장치.
  6. 제1항에 있어서, 데이터소거모드시에 상기 셀어레이의 소오스선에 독출전원전압이 인가되는 것을 특징으로 하는 불휘발성 반도체기억장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920013137A 1991-07-25 1992-07-23 소거모드시에 워드선에 부전압을 인가하는 행디코더회로를 갖춘 불휘발성 반도체기억장치 KR960003398B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP18643991A JP2835215B2 (ja) 1991-07-25 1991-07-25 不揮発性半導体記憶装置
JP91-186439 1991-07-25

Publications (2)

Publication Number Publication Date
KR930003154A true KR930003154A (ko) 1993-02-24
KR960003398B1 KR960003398B1 (ko) 1996-03-09

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KR1019920013137A KR960003398B1 (ko) 1991-07-25 1992-07-23 소거모드시에 워드선에 부전압을 인가하는 행디코더회로를 갖춘 불휘발성 반도체기억장치

Country Status (5)

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US (7) US5392253A (ko)
EP (1) EP0525678B1 (ko)
JP (1) JP2835215B2 (ko)
KR (1) KR960003398B1 (ko)
DE (1) DE69222589T2 (ko)

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JP2835215B2 (ja) 1998-12-14
US5513146A (en) 1996-04-30
EP0525678A2 (en) 1993-02-03
EP0525678B1 (en) 1997-10-08
JPH0528784A (ja) 1993-02-05
DE69222589T2 (de) 1998-02-26
KR960003398B1 (ko) 1996-03-09
US6088267A (en) 2000-07-11
US6166987A (en) 2000-12-26
US6041014A (en) 2000-03-21
EP0525678A3 (ko) 1995-03-01
US5392253A (en) 1995-02-21
US5680349A (en) 1997-10-21
DE69222589D1 (de) 1997-11-13
US5812459A (en) 1998-09-22

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