KR910009134A - 네가티브형 감방사선성 수지 조성물 - Google Patents

네가티브형 감방사선성 수지 조성물

Info

Publication number
KR910009134A
KR910009134A KR1019890014650A KR890014650A KR910009134A KR 910009134 A KR910009134 A KR 910009134A KR 1019890014650 A KR1019890014650 A KR 1019890014650A KR 890014650 A KR890014650 A KR 890014650A KR 910009134 A KR910009134 A KR 910009134A
Authority
KR
South Korea
Prior art keywords
resin composition
sensitive resin
negative radiation
radiation
negative
Prior art date
Application number
KR1019890014650A
Other languages
English (en)
Other versions
KR910007223B1 (ko
Inventor
요시히로 호사까
노즈에이꾸오
마사시게 다까도리
요시유끼 하리따
Original Assignee
니혼 고오세이 고무 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=15959629&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=KR910009134(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by 니혼 고오세이 고무 가부시끼가이샤 filed Critical 니혼 고오세이 고무 가부시끼가이샤
Publication of KR910009134A publication Critical patent/KR910009134A/ko
Application granted granted Critical
Publication of KR910007223B1 publication Critical patent/KR910007223B1/ko

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
    • C08J7/12—Chemical modification
    • C08J7/16—Chemical modification with polymerisable compounds
    • C08J7/18—Chemical modification with polymerisable compounds using wave energy or particle radiation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/008—Azides
    • G03F7/0085—Azides characterised by the non-macromolecular additives

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
KR1019890014650A 1985-08-07 1989-08-06 네가티브형 감방사선성 수지 조성물 KR910007223B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP17339685 1985-08-07
JP173396 1985-08-07

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1019860006477A Division KR910007224B1 (ko) 1985-08-07 1986-08-06 포지티브형 감방사선성 수지 조성물

Publications (2)

Publication Number Publication Date
KR910009134A true KR910009134A (ko) 1991-05-31
KR910007223B1 KR910007223B1 (ko) 1991-09-20

Family

ID=15959629

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1019860006477A KR910007224B1 (ko) 1985-08-07 1986-08-06 포지티브형 감방사선성 수지 조성물
KR1019890014650A KR910007223B1 (ko) 1985-08-07 1989-08-06 네가티브형 감방사선성 수지 조성물

Family Applications Before (1)

Application Number Title Priority Date Filing Date
KR1019860006477A KR910007224B1 (ko) 1985-08-07 1986-08-06 포지티브형 감방사선성 수지 조성물

Country Status (5)

Country Link
US (6) US5405720A (ko)
EP (2) EP0457367A1 (ko)
JP (1) JPS62123444A (ko)
KR (2) KR910007224B1 (ko)
DE (1) DE3684200D1 (ko)

Families Citing this family (147)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62123444A (ja) * 1985-08-07 1987-06-04 Japan Synthetic Rubber Co Ltd ポジ型感放射線性樹脂組成物
DE3780387T2 (de) * 1986-09-18 1993-01-28 Japan Synthetic Rubber Co Ltd Herstellungsverfahren einer integrierten schaltung.
EP0718693B1 (en) * 1986-12-23 2003-07-02 Shipley Company Inc. Photoresist compositions and components
US5128230A (en) * 1986-12-23 1992-07-07 Shipley Company Inc. Quinone diazide containing photoresist composition utilizing mixed solvent of ethyl lactate, anisole and amyl acetate
JPS63178228A (ja) * 1987-01-20 1988-07-22 Fuji Photo Film Co Ltd ポジ型フオトレジスト組成物
JPH07117746B2 (ja) * 1987-04-16 1995-12-18 富士写真フイルム株式会社 感光性平版印刷版の製造方法
JPH0196646A (ja) * 1987-10-09 1989-04-14 Hitachi Ltd フオトレジスト組成物
US4886728A (en) * 1988-01-06 1989-12-12 Olin Hunt Specialty Products Inc. Use of particular mixtures of ethyl lactate and methyl ethyl ketone to remove undesirable peripheral material (e.g. edge beads) from photoresist-coated substrates
US4920028A (en) * 1988-03-31 1990-04-24 Morton Thiokol, Inc. High contrast high thermal stability positive photoresists with mixed cresol and hydroxybenzaldehyde prepared novolak and photosensitive diazoquinone
NO891062L (no) * 1988-03-31 1989-10-02 Thiokol Morton Inc Positiv fotofoelsom sammensetning.
US4996122A (en) * 1988-03-31 1991-02-26 Morton International, Inc. Method of forming resist pattern and thermally stable and highly resolved resist pattern
NO891063L (no) * 1988-03-31 1989-10-02 Thiokol Morton Inc Novolakharpikser av blandede aldehyder og positive fotoresistmaterialer fremstilt fra slike harpikser.
US4997734A (en) * 1988-08-02 1991-03-05 Morton International, Inc. Method of forming a thermally stable mixed aldehyde novolak resin containing resist pattern and that pattern on a substrate
US5130409A (en) * 1988-04-22 1992-07-14 Morton International, Inc. Mixed aldehyde novolak resins useful as high contrast high thermal stability positive photoresists
EP0349301A3 (en) * 1988-06-28 1990-12-27 Mitsubishi Kasei Corporation Positive-type photoresist composition
US5456995A (en) * 1988-07-07 1995-10-10 Sumitomo Chemical Company, Limited Radiation-sensitive positive resist composition
JPH063544B2 (ja) * 1988-07-07 1994-01-12 住友化学工業株式会社 ポジ型感放射線性レジスト組成物
US5001040A (en) * 1988-07-11 1991-03-19 Olin Hunt Specialty Products Inc. Process of forming resist image in positive photoresist with thermally stable phenolic resin
US4959292A (en) * 1988-07-11 1990-09-25 Olin Hunt Specialty Products Inc. Light-sensitive o-quinone diazide composition and product with phenolic novolak prepared by condensation with haloacetoaldehyde
US4943511A (en) * 1988-08-05 1990-07-24 Morton Thiokol, Inc. High sensitivity mid and deep UV resist
WO1990003597A1 (en) * 1988-09-30 1990-04-05 Macdermid, Incorporated Soft-bake treatment of photoresists
US5063138A (en) * 1988-11-10 1991-11-05 Ocg Microelectronic Materials, Inc. Positive-working photoresist process employing a selected mixture of ethyl lactate and ethyl 3-ethoxy propionate as casting solvent during photoresist coating
US4965167A (en) * 1988-11-10 1990-10-23 Olin Hunt Specialty Products, Inc. Positive-working photoresist employing a selected mixture of ethyl lactate and ethyl 3-ethoxy propionate as casting solvent
JPH03127067A (ja) * 1989-10-13 1991-05-30 Sumitomo Chem Co Ltd ポジ型感放射線性レジスト組成物
ES2129395T3 (es) * 1989-10-16 1999-06-16 Us Health Sintesis total de enantiomeros de nortebaina, normorfina, noroximorfona y sus derivados a traves de productos intermedios n-nor.
JPH04328747A (ja) * 1991-03-27 1992-11-17 Internatl Business Mach Corp <Ibm> 均一にコートされたフォトレジスト組成物
JP3139088B2 (ja) * 1991-04-26 2001-02-26 住友化学工業株式会社 ポジ型レジスト組成物
TW213532B (ko) * 1991-07-26 1993-09-21 Mitsubishi Gas Chemical Co
TW267219B (ko) * 1991-12-27 1996-01-01 Sumitomo Chemical Co
KR100341563B1 (ko) * 1992-03-23 2002-10-25 제이에스알 가부시끼가이샤 레지스트도포조성물
JP3619261B2 (ja) 1993-06-15 2005-02-09 三菱レイヨン株式会社 溶剤組成物
JP3364727B2 (ja) * 1993-10-22 2003-01-08 イハラケミカル工業株式会社 ２，２−ビス（３，５−ジ置換−４−ヒドロキシフェニル）プロパン誘導体とその製造方法およびこの誘導体を用いるピロガロールの製造法
JPH07271023A (ja) * 1994-04-01 1995-10-20 Toagosei Co Ltd ポジ型フォトレジスト組成物
JPH07301917A (ja) * 1994-04-28 1995-11-14 Tokuyama Sekiyu Kagaku Kk ポジ型感放射線性樹脂組成物
US5977034A (en) * 1994-08-19 1999-11-02 Lifenet Research Foundation Composition for cleaning bones
FI100932B (fi) * 1995-04-12 1998-03-13 Nokia Telecommunications Oy Äänitaajuussignaalien lähetys radiopuhelinjärjestelmässä
DE19533608A1 (de) * 1995-09-11 1997-03-13 Basf Ag Positivarbeitendes strahlungsempfindliches Gemisch und Verfahren zur Herstellung von Reliefstrukturen
JP3057010B2 (ja) * 1996-08-29 2000-06-26 東京応化工業株式会社 ポジ型レジスト組成物及びレジストパターンの形成方法
US5910559A (en) * 1996-12-18 1999-06-08 Clariant Finance (Bvi) Limited Fractionated novolak resin from cresol-formaldehyde reaction mixture and photoresist composition therefrom
JP3365318B2 (ja) 1998-08-12 2003-01-08 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
US6200891B1 (en) * 1998-08-13 2001-03-13 International Business Machines Corporation Removal of dielectric oxides
KR100498440B1 (ko) * 1999-11-23 2005-07-01 삼성전자주식회사 백본이 환상 구조를 가지는 감광성 폴리머와 이를포함하는 레지스트 조성물
US6994799B2 (en) 1999-12-29 2006-02-07 Exxonmobil Chemical Patents Inc. Ester-containing fluid compositions
CN1436175A (zh) * 2000-04-03 2003-08-13 布里斯托尔-迈尔斯斯奎布药品公司 作为Aβ－蛋白生产抑制剂的环状内酰胺
JP4838437B2 (ja) * 2000-06-16 2011-12-14 Ｊｓｒ株式会社 感放射線性樹脂組成物
KR100760146B1 (ko) * 2000-09-18 2007-09-18 제이에스알 가부시끼가이샤 감방사선성 수지 조성물
JP4438218B2 (ja) * 2000-11-16 2010-03-24 Ｊｓｒ株式会社 感放射線性樹脂組成物
US7582226B2 (en) * 2000-12-22 2009-09-01 Exxonmobil Chemical Patents Inc. Ester-containing fluid compositions
US6838225B2 (en) * 2001-01-18 2005-01-04 Jsr Corporation Radiation-sensitive resin composition
US7192681B2 (en) 2001-07-05 2007-03-20 Fuji Photo Film Co., Ltd. Positive photosensitive composition
US7531286B2 (en) * 2002-03-15 2009-05-12 Jsr Corporation Radiation-sensitive resin composition
JP4048824B2 (ja) * 2002-05-09 2008-02-20 Ｊｓｒ株式会社 感放射線性樹脂組成物
KR100955454B1 (ko) 2002-05-31 2010-04-29 후지필름 가부시키가이샤 포지티브 레지스트 조성물
TWI314943B (en) * 2002-08-29 2009-09-21 Radiation-sensitive resin composition
JP3937996B2 (ja) * 2002-10-08 2007-06-27 Ｊｓｒ株式会社 感放射性樹脂組成物
KR20040092550A (ko) * 2003-04-24 2004-11-04 클라리언트 인터내셔널 리미티드 레지스트 조성물 및 레지스트 제거용 유기용제
WO2005027145A1 (ja) * 2003-09-11 2005-03-24 Nagase Chemtex Corporation 感放射線性樹脂組成物
JP4612999B2 (ja) 2003-10-08 2011-01-12 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4140506B2 (ja) * 2003-10-28 2008-08-27 Ｊｓｒ株式会社 感放射線性樹脂組成物
JP4448705B2 (ja) 2004-02-05 2010-04-14 富士フイルム株式会社 感光性組成物及び該感光性組成物を用いたパターン形成方法
JP4551704B2 (ja) 2004-07-08 2010-09-29 富士フイルム株式会社 液浸露光用保護膜形成組成物及びそれを用いたパターン形成方法
JP4621451B2 (ja) 2004-08-11 2011-01-26 富士フイルム株式会社 液浸露光用保護膜形成組成物及びそれを用いたパターン形成方法
JP4524154B2 (ja) * 2004-08-18 2010-08-11 富士フイルム株式会社 化学増幅型レジスト組成物及びそれを用いたパターン形成方法
EP1637927A1 (en) 2004-09-02 2006-03-22 Fuji Photo Film Co., Ltd. Positive resist composition and pattern forming method using the same
JP4469692B2 (ja) 2004-09-14 2010-05-26 富士フイルム株式会社 感光性組成物、該感光性組成物に用いられる化合物及び該感光性組成物を用いたパターン形成方法
JP4474256B2 (ja) 2004-09-30 2010-06-02 富士フイルム株式会社 レジスト組成物及びそれを用いたパターン形成方法
JP4452632B2 (ja) 2005-01-24 2010-04-21 富士フイルム株式会社 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法
US7947421B2 (en) 2005-01-24 2011-05-24 Fujifilm Corporation Positive resist composition for immersion exposure and pattern-forming method using the same
JP4562537B2 (ja) 2005-01-28 2010-10-13 富士フイルム株式会社 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法
JP4439409B2 (ja) 2005-02-02 2010-03-24 富士フイルム株式会社 レジスト組成物及びそれを用いたパターン形成方法
US8741537B2 (en) 2005-03-04 2014-06-03 Fujifilm Corporation Positive resist composition and pattern-forming method using the same
US7960087B2 (en) 2005-03-11 2011-06-14 Fujifilm Corporation Positive photosensitive composition and pattern-forming method using the same
JP4579019B2 (ja) 2005-03-17 2010-11-10 富士フイルム株式会社 ポジ型レジスト組成物及び該レジスト組成物を用いたパターン形成方法
EP1720072B1 (en) 2005-05-01 2019-06-05 Rohm and Haas Electronic Materials, L.L.C. Compositons and processes for immersion lithography
JP4724465B2 (ja) 2005-05-23 2011-07-13 富士フイルム株式会社 感光性組成物及び該感光性組成物を用いたパターン形成方法
TWI411877B (zh) * 2005-06-15 2013-10-11 Jsr Corp A photosensitive resin composition, a display panel spacer, and a display panel
JP4861767B2 (ja) 2005-07-26 2012-01-25 富士フイルム株式会社 ポジ型レジスト組成物およびそれを用いたパターン形成方法
JP4580841B2 (ja) 2005-08-16 2010-11-17 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4695941B2 (ja) 2005-08-19 2011-06-08 富士フイルム株式会社 液浸露光用ポジ型レジスト組成物及びそれを用いたパターン形成方法
TWI403843B (zh) 2005-09-13 2013-08-01 Fujifilm Corp 正型光阻組成物及使用它之圖案形成方法
TWI443461B (zh) 2005-12-09 2014-07-01 Fujifilm Corp 正型光阻組成物、用於正型光阻組成物之樹脂、用於合成該樹脂之化合物及使用該正型光阻組成物之圖案形成方法
JP4911456B2 (ja) 2006-11-21 2012-04-04 富士フイルム株式会社 ポジ型感光性組成物、該ポジ型感光性組成物に用いられる高分子化合物、該高分子化合物の製造方法及びポジ型感光性組成物を用いたパターン形成方法
JP4554665B2 (ja) 2006-12-25 2010-09-29 富士フイルム株式会社 パターン形成方法、該パターン形成方法に用いられる多重現像用ポジ型レジスト組成物、該パターン形成方法に用いられるネガ現像用現像液及び該パターン形成方法に用いられるネガ現像用リンス液
JP4905786B2 (ja) 2007-02-14 2012-03-28 富士フイルム株式会社 レジスト組成物及びそれを用いたパターン形成方法
EP1962139A1 (en) 2007-02-23 2008-08-27 FUJIFILM Corporation Negative resist composition and pattern forming method using the same
JP5162290B2 (ja) 2007-03-23 2013-03-13 富士フイルム株式会社 レジスト組成物及びそれを用いたパターン形成方法
US8088566B2 (en) 2007-03-26 2012-01-03 Fujifilm Corporation Surface-treating agent for pattern formation and pattern-forming method using the surface-treating agent
US7592118B2 (en) 2007-03-27 2009-09-22 Fujifilm Corporation Positive resist composition and pattern forming method using the same
US8182975B2 (en) 2007-03-28 2012-05-22 Fujifilm Corporation Positive resist composition and pattern forming method using the same
US7635554B2 (en) 2007-03-28 2009-12-22 Fujifilm Corporation Positive resist composition and pattern forming method
EP1975714A1 (en) 2007-03-28 2008-10-01 FUJIFILM Corporation Positive resist composition and pattern forming method
JP4982228B2 (ja) 2007-03-30 2012-07-25 富士フイルム株式会社 ポジ型レジスト組成物及びこれを用いたパターン形成方法
JP5039622B2 (ja) 2007-03-30 2012-10-03 富士フイルム株式会社 ポジ型レジスト組成物及びこれを用いたパターン形成方法
JP4562784B2 (ja) 2007-04-13 2010-10-13 富士フイルム株式会社 パターン形成方法、該パターン形成方法に用いられるレジスト組成物、現像液及びリンス液
EP1980911A3 (en) 2007-04-13 2009-06-24 FUJIFILM Corporation Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method
JP4617337B2 (ja) 2007-06-12 2011-01-26 富士フイルム株式会社 パターン形成方法
JP2009020510A (ja) 2007-06-15 2009-01-29 Fujifilm Corp パターン形成用表面処理剤、及び該処理剤を用いたパターン形成方法
JP2008311474A (ja) 2007-06-15 2008-12-25 Fujifilm Corp パターン形成方法
JP2009053688A (ja) 2007-07-30 2009-03-12 Fujifilm Corp ポジ型レジスト組成物及びパターン形成方法
JP5066405B2 (ja) 2007-08-02 2012-11-07 富士フイルム株式会社 電子線、ｘ線又はｅｕｖ用レジスト組成物及び該組成物を用いたパターン形成方法
EP2020617A3 (en) 2007-08-03 2009-04-29 FUJIFILM Corporation Resist composition containing a sulfonium compound, pattern-forming method using the resist composition, and sulfonium compound
US7923196B2 (en) 2007-08-10 2011-04-12 Fujifilm Corporation Positive resist composition and pattern forming method using the same
JP5449675B2 (ja) 2007-09-21 2014-03-19 富士フイルム株式会社 感光性組成物、該感光性組成物を用いたパターン形成方法及び該感光性組成物に用いられる化合物
JP4911469B2 (ja) 2007-09-28 2012-04-04 富士フイルム株式会社 レジスト組成物及びこれを用いたパターン形成方法
JP2009122325A (ja) 2007-11-14 2009-06-04 Fujifilm Corp トップコート組成物、それを用いたアルカリ現像液可溶性トップコート膜及びそれを用いたパターン形成方法
JP5150296B2 (ja) 2008-02-13 2013-02-20 富士フイルム株式会社 電子線、ｘ線またはｅｕｖ用ポジ型レジスト組成物及びこれを用いたパターン形成方法
US9046773B2 (en) 2008-03-26 2015-06-02 Fujifilm Corporation Actinic ray-sensitive or radiation-sensitive resin composition, pattern forming method using the same, polymerizable compound and polymer compound obtained by polymerizing the polymerizable compound
JP5997873B2 (ja) 2008-06-30 2016-09-28 富士フイルム株式会社 感光性組成物及びそれを用いたパターン形成方法
JP5244711B2 (ja) 2008-06-30 2013-07-24 富士フイルム株式会社 感活性光線性または感放射線性樹脂組成物及びそれを用いたパターン形成方法
JP5746818B2 (ja) 2008-07-09 2015-07-08 富士フイルム株式会社 感活性光線性または感放射線性樹脂組成物及びそれを用いたパターン形成方法
JP5106285B2 (ja) 2008-07-16 2012-12-26 富士フイルム株式会社 光硬化性組成物、インク組成物、及び該インク組成物を用いたインクジェット記録方法
JP5277128B2 (ja) 2008-09-26 2013-08-28 富士フイルム株式会社 液浸露光用ポジ型レジスト組成物及びパターン形成方法
EP2196462B1 (en) 2008-12-12 2011-09-28 Fujifilm Corporation Polymerizable compound, lactone-containing compound, method for manufacturing lactone-containing compound and polymer compound obtained by polymerizing the polymerizable compound
KR101872219B1 (ko) 2008-12-12 2018-06-28 후지필름 가부시키가이샤 감활성광선성 또는 감방사선성 수지 조성물 및 그 조성물을 이용한 패턴 형성 방법
JP5377172B2 (ja) 2009-03-31 2013-12-25 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物及びそれを用いたパターン形成方法
EP3062151B1 (en) 2011-08-12 2021-05-05 Mitsubishi Gas Chemical Company, Inc. Resist composition, method for forming resist pattern, polyphenolic compound for use in the composition, and alcoholic compound that can be derived therefrom
US20140329177A1 (en) 2011-11-18 2014-11-06 Mitsubishi Gas Chemical Company, Inc. Cyclic compound, method for producing same, radiation-sensitive composition, and resist pattern formation method
WO2013073582A1 (ja) 2011-11-18 2013-05-23 三菱瓦斯化学株式会社 環状化合物、その製造方法、感放射線性組成物及びレジストパターン形成方法
KR102115331B1 (ko) 2012-10-17 2020-05-26 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 레지스트 조성물
JP5764589B2 (ja) 2012-10-31 2015-08-19 富士フイルム株式会社 化学増幅型レジスト膜のパターニング用有機系処理液の収容容器、並びに、これらを使用したパターン形成方法及び電子デバイスの製造方法
KR102159234B1 (ko) 2013-02-08 2020-09-23 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 레지스트 조성물, 레지스트 패턴 형성방법 및 이것에 이용하는 폴리페놀 유도체
CN105264440B (zh) 2013-06-07 2019-09-24 三菱瓦斯化学株式会社 抗蚀剂组合物
US20170066208A1 (en) 2015-09-08 2017-03-09 Canon Kabushiki Kaisha Substrate pretreatment for reducing fill time in nanoimprint lithography
US10488753B2 (en) 2015-09-08 2019-11-26 Canon Kabushiki Kaisha Substrate pretreatment and etch uniformity in nanoimprint lithography
US10620539B2 (en) 2016-03-31 2020-04-14 Canon Kabushiki Kaisha Curing substrate pretreatment compositions in nanoimprint lithography
US10134588B2 (en) 2016-03-31 2018-11-20 Canon Kabushiki Kaisha Imprint resist and substrate pretreatment for reducing fill time in nanoimprint lithography
US10095106B2 (en) 2016-03-31 2018-10-09 Canon Kabushiki Kaisha Removing substrate pretreatment compositions in nanoimprint lithography
US10509313B2 (en) 2016-06-28 2019-12-17 Canon Kabushiki Kaisha Imprint resist with fluorinated photoinitiator and substrate pretreatment for reducing fill time in nanoimprint lithography
US20200247739A1 (en) 2017-02-23 2020-08-06 Mitsubishi Gas Chemical Company, Inc. Compound, resin, composition, pattern formation method, and purification method
US10317793B2 (en) 2017-03-03 2019-06-11 Canon Kabushiki Kaisha Substrate pretreatment compositions for nanoimprint lithography
EP3605225A4 (en) 2017-03-31 2021-01-13 The School Corporation Kansai University COMPOUND, RESIST COMPOSITION WITH THIS COMPOUND, AND PATTERN MANUFACTURING METHOD USING THE RESIST COMPOSITION
EP3605227A4 (en) 2017-03-31 2020-04-22 The School Corporation Kansai University RESIST COMPOSITION AND PATTERN FORMING METHOD USING SAME, AND COMPOUND AND RESIN
JP7252516B2 (ja) 2017-06-28 2023-04-05 三菱瓦斯化学株式会社 膜形成材料、リソグラフィー用膜形成用組成物、光学部品形成用材料、レジスト組成物、レジストパターン形成方法、レジスト用永久膜、感放射線性組成物、アモルファス膜の製造方法、リソグラフィー用下層膜形成材料、リソグラフィー用下層膜形成用組成物、リソグラフィー用下層膜の製造方法及び回路パターン形成方法
CN111164511A (zh) 2017-09-29 2020-05-15 学校法人关西大学 光刻用组合物、图案形成方法和化合物
JP7235207B2 (ja) 2017-11-20 2023-03-08 三菱瓦斯化学株式会社 リソグラフィー用膜形成用組成物、リソグラフィー用膜、レジストパターン形成方法、及び回路パターン形成方法
WO2019142897A1 (ja) 2018-01-22 2019-07-25 三菱瓦斯化学株式会社 化合物、樹脂、組成物及びパターン形成方法
TW201940967A (zh) 2018-01-31 2019-10-16 日商三菱瓦斯化學股份有限公司 組成物，以及阻劑圖型之形成方法及絕緣膜之形成方法
US20200361843A1 (en) 2018-01-31 2020-11-19 Mitsubishi Gas Chemical Company, Inc. Compound, resin, composition, resist pattern formation method, circuit pattern formation method and method for purifying resin
US20210331994A1 (en) 2018-08-24 2021-10-28 Mitsubishi Gas Chemical Company, Inc. Compound, composition containing the same, method for forming resist pattern and method for forming insulating film
CN114450631A (zh) 2019-09-30 2022-05-06 富士胶片株式会社 感光化射线性或感放射线性树脂组合物、感光化射线性或感放射线性膜、图案形成方法及电子器件的制造方法
KR20210068709A (ko) * 2019-12-02 2021-06-10 롬엔드하스전자재료코리아유한회사 포지티브형 감광성 수지 조성물 및 이로부터 제조된 경화막
JP7398551B2 (ja) 2020-03-30 2023-12-14 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、パターン形成方法、電子デバイスの製造方法、フォトマスク製造用感活性光線性又は感放射線性樹脂組成物、及びフォトマスクの製造方法
WO2021200179A1 (ja) 2020-03-31 2021-10-07 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、パターン形成方法、及び電子デバイスの製造方法
KR20240037877A (ko) * 2021-07-30 2024-03-22 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 레지스트 조성물, 및 그것을 이용한 레지스트막 형성 방법
WO2024014329A1 (ja) * 2022-07-14 2024-01-18 三菱瓦斯化学株式会社 レジスト組成物、及びそれを用いたレジスト膜形成方法
WO2024014330A1 (ja) * 2022-07-14 2024-01-18 三菱瓦斯化学株式会社 レジスト補助膜組成物、及び該組成物を用いたパターンの形成方法
WO2024014331A1 (ja) * 2022-07-14 2024-01-18 三菱瓦斯化学株式会社 シンナー組成物、及び該シンナー組成物を用いた半導体デバイスの製造方法

Family Cites Families (72)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2980534A (en) * 1956-12-17 1961-04-18 Monsanto Chemicals Photographic compositions and photographic elements
NL247588A (ko) * 1959-01-21
US3635709A (en) * 1966-12-15 1972-01-18 Polychrome Corp Light-sensitive lithographic plate
US3589898A (en) * 1968-10-08 1971-06-29 Polychrome Corp Litho plate
US3707373A (en) * 1969-03-17 1972-12-26 Eastman Kodak Co Lithographic plate developers
US3666473A (en) * 1970-10-06 1972-05-30 Ibm Positive photoresists for projection exposure
GB1375461A (ko) 1972-05-05 1974-11-27
US3826900A (en) * 1972-10-13 1974-07-30 Ncr Cordless scanning probe
US4164421A (en) 1972-12-09 1979-08-14 Fuji Photo Film Co., Ltd. Photocurable composition containing an o-quinonodiazide for printing plate
JPS4988603A (ko) * 1972-12-29 1974-08-24
US4132550A (en) 1974-03-01 1979-01-02 Motorola, Inc. Photoresists with particles less than one micron
JPS5821257B2 (ja) * 1974-04-25 1983-04-28 富士写真フイルム株式会社 キンゾクガゾウケイセイザイリヨウ
JPS50141614A (ko) * 1974-05-01 1975-11-14
JPS5128001A (en) * 1974-08-29 1976-03-09 Polychrome Corp Kizaijono kankohifuku oyobi sonoseizoho
CA1085212A (en) * 1975-05-27 1980-09-09 Ronald H. Engebrecht Use of volatile carboxylic acids in improved photoresists containing quinone diazides
US4197132A (en) * 1975-06-24 1980-04-08 Fuji Photo Film Co., Ltd. Photopolymer photoresist composition containing rosin tackifier adhesion improver and chlorinated polyolefin
JPS5934292B2 (ja) * 1975-06-24 1984-08-21 富士写真フイルム株式会社 ホトレジスト材料
NL7609513A (nl) * 1975-09-02 1977-03-04 Printing Dev Inc Voor licht gevoelig resistbekledingspreparaat en voor licht gevoelig voortbrengsel alsmede werkwijze voor het vervaardigen van een litho- grafische drukplaat.
JPS6023703B2 (ja) * 1976-04-10 1985-06-08 古河電気工業株式会社 耐熱性エチレン・四弗化エチレン共重合体組成物成形品の製造方法
GB1492529A (en) * 1976-05-26 1977-11-23 Vickers Ltd Treatment of planographic printing blanks
JPS5484728A (en) 1977-12-19 1979-07-05 Mitsubishi Paper Mills Ltd Liquid for removing picture on organic electronic photographic sensitive layer
JPS54135004A (en) * 1978-04-10 1979-10-19 Fuji Photo Film Co Ltd Photosensitive flat printing plate
JPS5555335A (en) * 1978-10-19 1980-04-23 Fuji Photo Film Co Ltd Photosensitive composition
JPS5562444A (en) * 1978-11-02 1980-05-10 Konishiroku Photo Ind Co Ltd Photosensitive composition
JPS5575758A (en) * 1978-12-06 1980-06-07 Fuji Photo Film Co Ltd Coating method and apparatus therefor
CA1160880A (en) 1979-02-02 1984-01-24 Keith E. Whitmore Imaging with nonplanar support elements
JPS55129341A (en) * 1979-03-29 1980-10-07 Daicel Chem Ind Ltd Photosensitive covering composition
US4370406A (en) * 1979-12-26 1983-01-25 Richardson Graphics Company Developers for photopolymer lithographic plates
JPS56140342A (en) * 1980-04-02 1981-11-02 Tokyo Ohka Kogyo Co Ltd Image forming composition and formation of resist image
DE3040156A1 (de) 1980-10-24 1982-06-03 Hoechst Ag, 6000 Frankfurt Lichtempfindliches gemisch und damit hergestelltes lichtempfindliches kopiermaterial
EP0054258B1 (en) 1980-12-17 1986-03-05 Konica Corporation Photosensitive compositions
JPS57178242A (en) 1981-04-27 1982-11-02 Konishiroku Photo Ind Co Ltd Photosensitive lithographic plate
JPS5811932A (ja) * 1981-07-15 1983-01-22 Konishiroku Photo Ind Co Ltd 感光性組成物
JPS5818625A (ja) * 1981-07-28 1983-02-03 Mitsubishi Chem Ind Ltd 感光性組成物
JPS58173740A (ja) * 1982-04-05 1983-10-12 Mitsubishi Chem Ind Ltd 感光性組成物
US4421841A (en) * 1981-07-28 1983-12-20 Mitsubishi Chemical Industries Limited Photosensitive lithographic plate with sulfonate containing photosensitive polyester
US4365019A (en) * 1981-08-06 1982-12-21 Eastman Kodak Company Positive-working resist quinone diazide containing composition and imaging method having improved development rates
JPS58150948A (ja) * 1982-03-03 1983-09-07 Dainippon Ink & Chem Inc 感光性組成物
US4439516A (en) * 1982-03-15 1984-03-27 Shipley Company Inc. High temperature positive diazo photoresist processing using polyvinyl phenol
US4499171A (en) * 1982-04-20 1985-02-12 Japan Synthetic Rubber Co., Ltd. Positive type photosensitive resin composition with at least two o-quinone diazides
JPS5937539A (ja) * 1982-08-26 1984-03-01 Mitsubishi Chem Ind Ltd 感光性平版印刷版
JPS59108037A (ja) * 1982-12-10 1984-06-22 Isuzu Motors Ltd 樹脂塗装用プライマ−
JPS59155838A (ja) * 1983-02-24 1984-09-05 Tokyo Ohka Kogyo Co Ltd ポジ型感光性塗膜形成用組成物
JPS59166947A (ja) * 1983-03-14 1984-09-20 Japan Synthetic Rubber Co Ltd 電離放射線用ネガ型レジスト
JPS59180539A (ja) * 1983-03-31 1984-10-13 Fujitsu Ltd 微細パタ−ン形成用ネガ型レジスト
US4526856A (en) * 1983-05-23 1985-07-02 Allied Corporation Low striation positive diazoketone resist composition with cyclic ketone(s) and aliphatic alcohol as solvents
DE3323343A1 (de) * 1983-06-29 1985-01-10 Hoechst Ag, 6230 Frankfurt Lichtempfindliches gemisch und daraus hergestelltes kopiermaterial
JPS6024545A (ja) * 1983-07-21 1985-02-07 Japan Synthetic Rubber Co Ltd ポジ型感光性樹脂組成物
JPH0658529B2 (ja) * 1983-08-17 1994-08-03 三菱化成株式会社 ポジ型クレゾ−ルノボラツクフオトレジスト組成物
US4626491A (en) 1983-10-07 1986-12-02 J. T. Baker Chemical Company Deep ultra-violet lithographic resist composition and process of using
JPS60104940A (ja) * 1983-11-14 1985-06-10 Fuji Photo Film Co Ltd 感光材料の製造方法
JPS60121445A (ja) * 1983-12-06 1985-06-28 Japan Synthetic Rubber Co Ltd 集積回路作製用ポジ型感光性樹脂組成物
JPS60136034A (ja) * 1983-12-23 1985-07-19 Sony Corp 磁気記録媒体
EP0155231B2 (de) * 1984-03-07 1997-01-15 Ciba-Geigy Ag Verfahren zur Herstellung von Abbildungen
JPS60245450A (ja) * 1984-05-18 1985-12-05 Matsushita Electric Ind Co Ltd 小型モ−タ
DE3421160A1 (de) 1984-06-07 1985-12-12 Hoechst Ag, 6230 Frankfurt Positiv arbeitende strahlungsempfindliche beschichtungsloesung
US4550069A (en) * 1984-06-11 1985-10-29 American Hoechst Corporation Positive photoresist compositions with o-quinone diazide, novolak, and propylene glycol alkyl ether acetate
JPS617839A (ja) * 1984-06-22 1986-01-14 Sanritsu Kogyo Kk ハ−ドマスク修正法
JPH0782236B2 (ja) * 1984-10-12 1995-09-06 三菱化学株式会社 感光性組成物
JPH0766183B2 (ja) * 1985-05-15 1995-07-19 三菱化学株式会社 ポジ型フオトレジスト組成物
US4626492A (en) 1985-06-04 1986-12-02 Olin Hunt Specialty Products, Inc. Positive-working o-quinone diazide photoresist composition containing a dye and a trihydroxybenzophenone compound
JPS61289019A (ja) 1985-06-18 1986-12-19 Geran Kaihatsu Kenkyusho:Kk 美爪エナメル除去剤
JPS62123444A (ja) * 1985-08-07 1987-06-04 Japan Synthetic Rubber Co Ltd ポジ型感放射線性樹脂組成物
US5238774A (en) * 1985-08-07 1993-08-24 Japan Synthetic Rubber Co., Ltd. Radiation-sensitive composition containing 1,2-quinonediazide compound, alkali-soluble resin and monooxymonocarboxylic acid ester solvent
US5215857A (en) * 1985-08-07 1993-06-01 Japan Synthetic Rubber Co., Ltd. 1,2-quinonediazide containing radiation-sensitive resin composition utilizing methyl 2-hydroxypropionate, ethyl 2-hydroxypropionate or methyl 3-methoxypropionate as the solvent
EP0227487B1 (en) * 1985-12-27 1992-07-15 Japan Synthetic Rubber Co., Ltd. Positive type radiation-sensitive resin composition
US4845008A (en) 1986-02-20 1989-07-04 Fuji Photo Film Co., Ltd. Light-sensitive positive working, o-guinone diazide presensitized plate with mixed solvent
JPH0820730B2 (ja) * 1986-10-30 1996-03-04 日本合成ゴム株式会社 ポジ型感放射線性樹脂組成物
EP0718693B1 (en) * 1986-12-23 2003-07-02 Shipley Company Inc. Photoresist compositions and components
US5128230A (en) * 1986-12-23 1992-07-07 Shipley Company Inc. Quinone diazide containing photoresist composition utilizing mixed solvent of ethyl lactate, anisole and amyl acetate
EP0285055B1 (en) * 1987-04-03 1992-06-24 Sumitomo Chemical Company, Limited Process for recovery of gallium by chelate resin
JP3139088B2 (ja) * 1991-04-26 2001-02-26 住友化学工業株式会社 ポジ型レジスト組成物

Also Published As

Publication number Publication date
KR910007224B1 (ko) 1991-09-20
US6020104A (en) 2000-02-01
EP0457367A1 (en) 1991-11-21
EP0211667A3 (en) 1987-09-09
KR910007223B1 (ko) 1991-09-20
EP0211667A2 (en) 1987-02-25
DE3684200D1 (de) 1992-04-16
US5494784A (en) 1996-02-27
EP0211667B1 (en) 1992-03-11
US6228554B1 (en) 2001-05-08
US6270939B1 (en) 2001-08-07
JPS62123444A (ja) 1987-06-04
KR870002181A (ko) 1987-03-30
US5405720A (en) 1995-04-11
JPH0322619B2 (ko) 1991-03-27
US5925492A (en) 1999-07-20

Similar Documents

Publication Publication Date Title
KR910009134A (ko) 네가티브형 감방사선성 수지 조성물
DE3687403T2 (de) Harzzusammensetzung.
EP0227487A3 (en) Positive type radiation-sensitive resin composition
FI862754A (fi) Orienterad film med syrespaerr.
DK76182A (da) Harpikssammensaetning
MX163529B (es) Composicion quimicoluminiscente
DE3650512D1 (de) Orientierte Kunststoffolie
DE3687998D1 (de) Waermehaertbare harzzusammensetzung.
DK590785A (da) Tykfilm-modstandspraeparater
DE3686673D1 (de) Strahlenhaertbare harzzusammensetzung.
BR8605911A (pt) Composicao termoplastica
DE3688986D1 (de) Epoxydharzzusammensetzung.
BR8600694A (pt) Conjunto alternador-compressor
BR8600290A (pt) Composicao polimerizavel
KR900006818A (ko) 감방사선성 수지 조성물
DE3678602D1 (de) Epoxydharzzusammensetzung.
DE3676182D1 (de) Harzzusammensetzung.
DE3783913T2 (de) Strahlungsempfindliche acrylharzzusammensetzung.
DE3582490D1 (de) Epoxydharzzusammensetzung.
DK536686A (da) Polymerkomposition
DE3678036D1 (de) Epoxydharzzusammensetzung.
DE3683390D1 (de) Epoxydharzzusammensetzung.
DK582585D0 (da) Tykfilm-modstandspraeparater
KR860007326A (ko) 열가소성 수지 조성물
RO93229A2 (ro) Compozitie adeziva

Legal Events

Date Code Title Description
A107 Divisional application of patent
A201 Request for examination
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20050909

Year of fee payment: 15

EXPY Expiration of term