DE3684200D1 - Strahlungsempfindliche kunststoffzusammensetzung. - Google Patents
Strahlungsempfindliche kunststoffzusammensetzung.Info
- Publication number
- DE3684200D1 DE3684200D1 DE8686306125T DE3684200T DE3684200D1 DE 3684200 D1 DE3684200 D1 DE 3684200D1 DE 8686306125 T DE8686306125 T DE 8686306125T DE 3684200 T DE3684200 T DE 3684200T DE 3684200 D1 DE3684200 D1 DE 3684200D1
- Authority
- DE
- Germany
- Prior art keywords
- radiation
- plastic composition
- sensitive plastic
- sensitive
- composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
- C08J7/12—Chemical modification
- C08J7/16—Chemical modification with polymerisable compounds
- C08J7/18—Chemical modification with polymerisable compounds using wave energy or particle radiation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/008—Azides
- G03F7/0085—Azides characterised by the non-macromolecular additives
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Toxicology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Materials For Photolithography (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17339685 | 1985-08-07 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3684200D1 true DE3684200D1 (de) | 1992-04-16 |
Family
ID=15959629
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8686306125T Expired - Lifetime DE3684200D1 (de) | 1985-08-07 | 1986-08-07 | Strahlungsempfindliche kunststoffzusammensetzung. |
Country Status (5)
Country | Link |
---|---|
US (6) | US5405720A (de) |
EP (2) | EP0211667B1 (de) |
JP (1) | JPS62123444A (de) |
KR (2) | KR910007224B1 (de) |
DE (1) | DE3684200D1 (de) |
Families Citing this family (147)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62123444A (ja) * | 1985-08-07 | 1987-06-04 | Japan Synthetic Rubber Co Ltd | ポジ型感放射線性樹脂組成物 |
EP0260994B1 (de) * | 1986-09-18 | 1992-07-15 | Japan Synthetic Rubber Co., Ltd. | Herstellungsverfahren einer integrierten Schaltung |
JP2729284B2 (ja) * | 1986-12-23 | 1998-03-18 | シップレー・カンパニー・インコーポレーテッド | フォトレジスト方法及びこの方法に用いる組成物 |
US5128230A (en) * | 1986-12-23 | 1992-07-07 | Shipley Company Inc. | Quinone diazide containing photoresist composition utilizing mixed solvent of ethyl lactate, anisole and amyl acetate |
JPS63178228A (ja) * | 1987-01-20 | 1988-07-22 | Fuji Photo Film Co Ltd | ポジ型フオトレジスト組成物 |
JPH07117746B2 (ja) * | 1987-04-16 | 1995-12-18 | 富士写真フイルム株式会社 | 感光性平版印刷版の製造方法 |
JPH0196646A (ja) * | 1987-10-09 | 1989-04-14 | Hitachi Ltd | フオトレジスト組成物 |
US4886728A (en) * | 1988-01-06 | 1989-12-12 | Olin Hunt Specialty Products Inc. | Use of particular mixtures of ethyl lactate and methyl ethyl ketone to remove undesirable peripheral material (e.g. edge beads) from photoresist-coated substrates |
NO891063L (no) * | 1988-03-31 | 1989-10-02 | Thiokol Morton Inc | Novolakharpikser av blandede aldehyder og positive fotoresistmaterialer fremstilt fra slike harpikser. |
NO891062L (no) * | 1988-03-31 | 1989-10-02 | Thiokol Morton Inc | Positiv fotofoelsom sammensetning. |
US4920028A (en) * | 1988-03-31 | 1990-04-24 | Morton Thiokol, Inc. | High contrast high thermal stability positive photoresists with mixed cresol and hydroxybenzaldehyde prepared novolak and photosensitive diazoquinone |
US4996122A (en) * | 1988-03-31 | 1991-02-26 | Morton International, Inc. | Method of forming resist pattern and thermally stable and highly resolved resist pattern |
US4997734A (en) * | 1988-08-02 | 1991-03-05 | Morton International, Inc. | Method of forming a thermally stable mixed aldehyde novolak resin containing resist pattern and that pattern on a substrate |
US5130409A (en) * | 1988-04-22 | 1992-07-14 | Morton International, Inc. | Mixed aldehyde novolak resins useful as high contrast high thermal stability positive photoresists |
EP0349301A3 (de) * | 1988-06-28 | 1990-12-27 | Mitsubishi Kasei Corporation | Positiv arbeitende Photolackzusammensetzung |
CA1337626C (en) * | 1988-07-07 | 1995-11-28 | Haruyoshi Osaki | Radiation-sensitive positive resist composition |
US5456995A (en) * | 1988-07-07 | 1995-10-10 | Sumitomo Chemical Company, Limited | Radiation-sensitive positive resist composition |
US5001040A (en) * | 1988-07-11 | 1991-03-19 | Olin Hunt Specialty Products Inc. | Process of forming resist image in positive photoresist with thermally stable phenolic resin |
US4959292A (en) * | 1988-07-11 | 1990-09-25 | Olin Hunt Specialty Products Inc. | Light-sensitive o-quinone diazide composition and product with phenolic novolak prepared by condensation with haloacetoaldehyde |
US4943511A (en) * | 1988-08-05 | 1990-07-24 | Morton Thiokol, Inc. | High sensitivity mid and deep UV resist |
WO1990003597A1 (en) * | 1988-09-30 | 1990-04-05 | Macdermid, Incorporated | Soft-bake treatment of photoresists |
US4965167A (en) * | 1988-11-10 | 1990-10-23 | Olin Hunt Specialty Products, Inc. | Positive-working photoresist employing a selected mixture of ethyl lactate and ethyl 3-ethoxy propionate as casting solvent |
US5063138A (en) * | 1988-11-10 | 1991-11-05 | Ocg Microelectronic Materials, Inc. | Positive-working photoresist process employing a selected mixture of ethyl lactate and ethyl 3-ethoxy propionate as casting solvent during photoresist coating |
JPH03127067A (ja) * | 1989-10-13 | 1991-05-30 | Sumitomo Chem Co Ltd | ポジ型感放射線性レジスト組成物 |
ES2129395T3 (es) * | 1989-10-16 | 1999-06-16 | Us Health | Sintesis total de enantiomeros de nortebaina, normorfina, noroximorfona y sus derivados a traves de productos intermedios n-nor. |
JPH04328747A (ja) * | 1991-03-27 | 1992-11-17 | Internatl Business Mach Corp <Ibm> | 均一にコートされたフォトレジスト組成物 |
JP3139088B2 (ja) * | 1991-04-26 | 2001-02-26 | 住友化学工業株式会社 | ポジ型レジスト組成物 |
TW213532B (de) * | 1991-07-26 | 1993-09-21 | Mitsubishi Gas Chemical Co | |
TW267219B (de) * | 1991-12-27 | 1996-01-01 | Sumitomo Chemical Co | |
KR100341563B1 (ko) * | 1992-03-23 | 2002-10-25 | 제이에스알 가부시끼가이샤 | 레지스트도포조성물 |
JP3619261B2 (ja) | 1993-06-15 | 2005-02-09 | 三菱レイヨン株式会社 | 溶剤組成物 |
JP3364727B2 (ja) * | 1993-10-22 | 2003-01-08 | イハラケミカル工業株式会社 | 2,2−ビス(3,5−ジ置換−4−ヒドロキシフェニル)プロパン誘導体とその製造方法およびこの誘導体を用いるピロガロールの製造法 |
JPH07271023A (ja) * | 1994-04-01 | 1995-10-20 | Toagosei Co Ltd | ポジ型フォトレジスト組成物 |
JPH07301917A (ja) * | 1994-04-28 | 1995-11-14 | Tokuyama Sekiyu Kagaku Kk | ポジ型感放射線性樹脂組成物 |
US5977034A (en) * | 1994-08-19 | 1999-11-02 | Lifenet Research Foundation | Composition for cleaning bones |
FI100932B (fi) * | 1995-04-12 | 1998-03-13 | Nokia Telecommunications Oy | Äänitaajuussignaalien lähetys radiopuhelinjärjestelmässä |
DE19533608A1 (de) * | 1995-09-11 | 1997-03-13 | Basf Ag | Positivarbeitendes strahlungsempfindliches Gemisch und Verfahren zur Herstellung von Reliefstrukturen |
JP3057010B2 (ja) * | 1996-08-29 | 2000-06-26 | 東京応化工業株式会社 | ポジ型レジスト組成物及びレジストパターンの形成方法 |
US5910559A (en) * | 1996-12-18 | 1999-06-08 | Clariant Finance (Bvi) Limited | Fractionated novolak resin from cresol-formaldehyde reaction mixture and photoresist composition therefrom |
JP3365318B2 (ja) | 1998-08-12 | 2003-01-08 | 信越化学工業株式会社 | 高分子化合物、レジスト材料及びパターン形成方法 |
US6200891B1 (en) * | 1998-08-13 | 2001-03-13 | International Business Machines Corporation | Removal of dielectric oxides |
KR100498440B1 (ko) * | 1999-11-23 | 2005-07-01 | 삼성전자주식회사 | 백본이 환상 구조를 가지는 감광성 폴리머와 이를포함하는 레지스트 조성물 |
MXPA02006492A (es) | 1999-12-29 | 2002-11-29 | Exxon Chemical Patents Inc | Composiciones fluidas que contienen ester. |
MXPA02009755A (es) * | 2000-04-03 | 2003-03-27 | Bristol Myers Squibb Pharma Co | Lactamas ciclicas como inhibidores de la produccion de proteina a-beta. |
JP4838437B2 (ja) * | 2000-06-16 | 2011-12-14 | Jsr株式会社 | 感放射線性樹脂組成物 |
EP1193558A3 (de) * | 2000-09-18 | 2002-08-14 | JSR Corporation | Lichtempfindliche Zusammensetzung |
JP4438218B2 (ja) * | 2000-11-16 | 2010-03-24 | Jsr株式会社 | 感放射線性樹脂組成物 |
US7582226B2 (en) * | 2000-12-22 | 2009-09-01 | Exxonmobil Chemical Patents Inc. | Ester-containing fluid compositions |
US6838225B2 (en) * | 2001-01-18 | 2005-01-04 | Jsr Corporation | Radiation-sensitive resin composition |
US7192681B2 (en) | 2001-07-05 | 2007-03-20 | Fuji Photo Film Co., Ltd. | Positive photosensitive composition |
US7531286B2 (en) * | 2002-03-15 | 2009-05-12 | Jsr Corporation | Radiation-sensitive resin composition |
JP4048824B2 (ja) * | 2002-05-09 | 2008-02-20 | Jsr株式会社 | 感放射線性樹脂組成物 |
KR100955454B1 (ko) | 2002-05-31 | 2010-04-29 | 후지필름 가부시키가이샤 | 포지티브 레지스트 조성물 |
TWI314943B (en) * | 2002-08-29 | 2009-09-21 | Radiation-sensitive resin composition | |
JP3937996B2 (ja) * | 2002-10-08 | 2007-06-27 | Jsr株式会社 | 感放射性樹脂組成物 |
KR20040092550A (ko) * | 2003-04-24 | 2004-11-04 | 클라리언트 인터내셔널 리미티드 | 레지스트 조성물 및 레지스트 제거용 유기용제 |
JP4621870B2 (ja) | 2003-09-11 | 2011-01-26 | ナガセケムテックス株式会社 | 感放射線性樹脂組成物 |
JP4612999B2 (ja) | 2003-10-08 | 2011-01-12 | 富士フイルム株式会社 | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
JP4140506B2 (ja) * | 2003-10-28 | 2008-08-27 | Jsr株式会社 | 感放射線性樹脂組成物 |
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JP4524154B2 (ja) | 2004-08-18 | 2010-08-11 | 富士フイルム株式会社 | 化学増幅型レジスト組成物及びそれを用いたパターン形成方法 |
US7504193B2 (en) | 2004-09-02 | 2009-03-17 | Fujifilm Corporation | Positive resist composition and pattern forming method using the same |
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JP4452632B2 (ja) | 2005-01-24 | 2010-04-21 | 富士フイルム株式会社 | 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法 |
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JP4562537B2 (ja) | 2005-01-28 | 2010-10-13 | 富士フイルム株式会社 | 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法 |
JP4439409B2 (ja) | 2005-02-02 | 2010-03-24 | 富士フイルム株式会社 | レジスト組成物及びそれを用いたパターン形成方法 |
EP1698937B1 (de) | 2005-03-04 | 2015-12-23 | FUJIFILM Corporation | Positiv arbeitende Resistzusammensetzung und Verfahren zur Herstellung von Mustern unter Verwendung dieser Zusammensetzung |
US7960087B2 (en) | 2005-03-11 | 2011-06-14 | Fujifilm Corporation | Positive photosensitive composition and pattern-forming method using the same |
JP4579019B2 (ja) | 2005-03-17 | 2010-11-10 | 富士フイルム株式会社 | ポジ型レジスト組成物及び該レジスト組成物を用いたパターン形成方法 |
EP1720072B1 (de) | 2005-05-01 | 2019-06-05 | Rohm and Haas Electronic Materials, L.L.C. | Zusammensetzungen und Verfahren für Immersionslithografie |
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TWI411877B (zh) * | 2005-06-15 | 2013-10-11 | Jsr Corp | A photosensitive resin composition, a display panel spacer, and a display panel |
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EP2138898B1 (de) | 2007-04-13 | 2014-05-21 | FUJIFILM Corporation | Verfahren zur Strukturbildung und Verwendung einer Fotolackzusammensetzung in diesem Verfahren |
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JP2008311474A (ja) | 2007-06-15 | 2008-12-25 | Fujifilm Corp | パターン形成方法 |
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JP2009122325A (ja) | 2007-11-14 | 2009-06-04 | Fujifilm Corp | トップコート組成物、それを用いたアルカリ現像液可溶性トップコート膜及びそれを用いたパターン形成方法 |
JP5150296B2 (ja) | 2008-02-13 | 2013-02-20 | 富士フイルム株式会社 | 電子線、x線またはeuv用ポジ型レジスト組成物及びこれを用いたパターン形成方法 |
US9046773B2 (en) | 2008-03-26 | 2015-06-02 | Fujifilm Corporation | Actinic ray-sensitive or radiation-sensitive resin composition, pattern forming method using the same, polymerizable compound and polymer compound obtained by polymerizing the polymerizable compound |
JP5997873B2 (ja) | 2008-06-30 | 2016-09-28 | 富士フイルム株式会社 | 感光性組成物及びそれを用いたパターン形成方法 |
JP5244711B2 (ja) | 2008-06-30 | 2013-07-24 | 富士フイルム株式会社 | 感活性光線性または感放射線性樹脂組成物及びそれを用いたパターン形成方法 |
JP5746818B2 (ja) | 2008-07-09 | 2015-07-08 | 富士フイルム株式会社 | 感活性光線性または感放射線性樹脂組成物及びそれを用いたパターン形成方法 |
JP5106285B2 (ja) | 2008-07-16 | 2012-12-26 | 富士フイルム株式会社 | 光硬化性組成物、インク組成物、及び該インク組成物を用いたインクジェット記録方法 |
JP5277128B2 (ja) | 2008-09-26 | 2013-08-28 | 富士フイルム株式会社 | 液浸露光用ポジ型レジスト組成物及びパターン形成方法 |
KR101872219B1 (ko) | 2008-12-12 | 2018-06-28 | 후지필름 가부시키가이샤 | 감활성광선성 또는 감방사선성 수지 조성물 및 그 조성물을 이용한 패턴 형성 방법 |
EP2356517B1 (de) | 2008-12-12 | 2017-01-25 | FUJIFILM Corporation | Aktinische strahlenempfindliche oder strahlungsempfindliche harzzusammensetzung und diese verwendendes strukturbildungsverfahren |
JP5377172B2 (ja) | 2009-03-31 | 2013-12-25 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物及びそれを用いたパターン形成方法 |
KR20140079359A (ko) | 2011-08-12 | 2014-06-26 | 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 | 레지스트 조성물, 레지스트 패턴 형성방법, 이에 이용되는 폴리페놀 화합물 및 이로부터 유도될 수 있는 알코올 화합물 |
CN103958455A (zh) | 2011-11-18 | 2014-07-30 | 三菱瓦斯化学株式会社 | 环状化合物、其制造方法、辐射敏感组合物及抗蚀图案形成方法 |
EP2781501A4 (de) | 2011-11-18 | 2015-07-22 | Mitsubishi Gas Chemical Co | Zyklische verbindung, herstellungsverfahren dafür, strahlungsempfindliche zusammensetzung und verfahren zur formung einer resiststruktur |
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WO2014196425A1 (ja) | 2013-06-07 | 2014-12-11 | 三菱瓦斯化学株式会社 | レジスト組成物 |
US20170066208A1 (en) | 2015-09-08 | 2017-03-09 | Canon Kabushiki Kaisha | Substrate pretreatment for reducing fill time in nanoimprint lithography |
US10488753B2 (en) | 2015-09-08 | 2019-11-26 | Canon Kabushiki Kaisha | Substrate pretreatment and etch uniformity in nanoimprint lithography |
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US10095106B2 (en) | 2016-03-31 | 2018-10-09 | Canon Kabushiki Kaisha | Removing substrate pretreatment compositions in nanoimprint lithography |
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US10509313B2 (en) | 2016-06-28 | 2019-12-17 | Canon Kabushiki Kaisha | Imprint resist with fluorinated photoinitiator and substrate pretreatment for reducing fill time in nanoimprint lithography |
US20200247739A1 (en) | 2017-02-23 | 2020-08-06 | Mitsubishi Gas Chemical Company, Inc. | Compound, resin, composition, pattern formation method, and purification method |
US10317793B2 (en) | 2017-03-03 | 2019-06-11 | Canon Kabushiki Kaisha | Substrate pretreatment compositions for nanoimprint lithography |
WO2018181872A1 (ja) | 2017-03-31 | 2018-10-04 | 学校法人関西大学 | 化合物、化合物を含むレジスト組成物及びそれを用いるパターン形成方法 |
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CN110856451A (zh) | 2017-06-28 | 2020-02-28 | 三菱瓦斯化学株式会社 | 膜形成材料、光刻用膜形成用组合物、光学部件形成用材料、抗蚀剂组合物、抗蚀图案形成方法、抗蚀剂用永久膜、辐射敏感组合物、非晶膜的制造方法、光刻用下层膜形成材料、光刻用下层膜形成用组合物、光刻用下层膜的制造方法及电路图案形成方法 |
KR20200054998A (ko) | 2017-09-29 | 2020-05-20 | 더 스쿨 코포레이션 칸사이 유니버시티 | 리소그래피용 조성물, 패턴 형성방법, 및 화합물 |
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WO2019142897A1 (ja) | 2018-01-22 | 2019-07-25 | 三菱瓦斯化学株式会社 | 化合物、樹脂、組成物及びパターン形成方法 |
JP7385827B2 (ja) | 2018-01-31 | 2023-11-24 | 三菱瓦斯化学株式会社 | 化合物、樹脂、組成物、レジストパターン形成方法、回路パターン形成方法及び樹脂の精製方法 |
WO2019151403A1 (ja) | 2018-01-31 | 2019-08-08 | 三菱瓦斯化学株式会社 | 組成物、並びに、レジストパターンの形成方法及び絶縁膜の形成方法 |
WO2020040162A1 (ja) | 2018-08-24 | 2020-02-27 | 三菱瓦斯化学株式会社 | 化合物、及びそれを含む組成物、並びに、レジストパターンの形成方法及び絶縁膜の形成方法 |
CN114450631A (zh) | 2019-09-30 | 2022-05-06 | 富士胶片株式会社 | 感光化射线性或感放射线性树脂组合物、感光化射线性或感放射线性膜、图案形成方法及电子器件的制造方法 |
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WO2021200179A1 (ja) | 2020-03-31 | 2021-10-07 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、パターン形成方法、及び電子デバイスの製造方法 |
JPWO2023008354A1 (de) * | 2021-07-30 | 2023-02-02 | ||
WO2024014331A1 (ja) * | 2022-07-14 | 2024-01-18 | 三菱瓦斯化学株式会社 | シンナー組成物、及び該シンナー組成物を用いた半導体デバイスの製造方法 |
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TW202409213A (zh) * | 2022-07-14 | 2024-03-01 | 日商三菱瓦斯化學股份有限公司 | 阻劑組成物、及使用其之阻劑膜形成方法 |
Family Cites Families (72)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2980534A (en) * | 1956-12-17 | 1961-04-18 | Monsanto Chemicals | Photographic compositions and photographic elements |
BE586713A (de) * | 1959-01-21 | |||
US3635709A (en) * | 1966-12-15 | 1972-01-18 | Polychrome Corp | Light-sensitive lithographic plate |
US3589898A (en) * | 1968-10-08 | 1971-06-29 | Polychrome Corp | Litho plate |
US3707373A (en) * | 1969-03-17 | 1972-12-26 | Eastman Kodak Co | Lithographic plate developers |
US3666473A (en) * | 1970-10-06 | 1972-05-30 | Ibm | Positive photoresists for projection exposure |
GB1375461A (de) | 1972-05-05 | 1974-11-27 | ||
US3826900A (en) * | 1972-10-13 | 1974-07-30 | Ncr | Cordless scanning probe |
US4164421A (en) | 1972-12-09 | 1979-08-14 | Fuji Photo Film Co., Ltd. | Photocurable composition containing an o-quinonodiazide for printing plate |
JPS4988603A (de) * | 1972-12-29 | 1974-08-24 | ||
US4132550A (en) | 1974-03-01 | 1979-01-02 | Motorola, Inc. | Photoresists with particles less than one micron |
JPS5821257B2 (ja) * | 1974-04-25 | 1983-04-28 | 富士写真フイルム株式会社 | キンゾクガゾウケイセイザイリヨウ |
JPS50141614A (de) * | 1974-05-01 | 1975-11-14 | ||
JPS5128001A (en) * | 1974-08-29 | 1976-03-09 | Polychrome Corp | Kizaijono kankohifuku oyobi sonoseizoho |
CA1085212A (en) * | 1975-05-27 | 1980-09-09 | Ronald H. Engebrecht | Use of volatile carboxylic acids in improved photoresists containing quinone diazides |
JPS5934292B2 (ja) * | 1975-06-24 | 1984-08-21 | 富士写真フイルム株式会社 | ホトレジスト材料 |
US4197132A (en) * | 1975-06-24 | 1980-04-08 | Fuji Photo Film Co., Ltd. | Photopolymer photoresist composition containing rosin tackifier adhesion improver and chlorinated polyolefin |
NL7609513A (nl) * | 1975-09-02 | 1977-03-04 | Printing Dev Inc | Voor licht gevoelig resistbekledingspreparaat en voor licht gevoelig voortbrengsel alsmede werkwijze voor het vervaardigen van een litho- grafische drukplaat. |
JPS6023703B2 (ja) * | 1976-04-10 | 1985-06-08 | 古河電気工業株式会社 | 耐熱性エチレン・四弗化エチレン共重合体組成物成形品の製造方法 |
GB1492529A (en) * | 1976-05-26 | 1977-11-23 | Vickers Ltd | Treatment of planographic printing blanks |
JPS5484728A (en) | 1977-12-19 | 1979-07-05 | Mitsubishi Paper Mills Ltd | Liquid for removing picture on organic electronic photographic sensitive layer |
JPS54135004A (en) * | 1978-04-10 | 1979-10-19 | Fuji Photo Film Co Ltd | Photosensitive flat printing plate |
JPS5555335A (en) * | 1978-10-19 | 1980-04-23 | Fuji Photo Film Co Ltd | Photosensitive composition |
JPS5562444A (en) * | 1978-11-02 | 1980-05-10 | Konishiroku Photo Ind Co Ltd | Photosensitive composition |
JPS5575758A (en) * | 1978-12-06 | 1980-06-07 | Fuji Photo Film Co Ltd | Coating method and apparatus therefor |
CA1160880A (en) | 1979-02-02 | 1984-01-24 | Keith E. Whitmore | Imaging with nonplanar support elements |
JPS55129341A (en) * | 1979-03-29 | 1980-10-07 | Daicel Chem Ind Ltd | Photosensitive covering composition |
US4370406A (en) * | 1979-12-26 | 1983-01-25 | Richardson Graphics Company | Developers for photopolymer lithographic plates |
JPS56140342A (en) * | 1980-04-02 | 1981-11-02 | Tokyo Ohka Kogyo Co Ltd | Image forming composition and formation of resist image |
DE3040156A1 (de) | 1980-10-24 | 1982-06-03 | Hoechst Ag, 6000 Frankfurt | Lichtempfindliches gemisch und damit hergestelltes lichtempfindliches kopiermaterial |
DE3174017D1 (en) | 1980-12-17 | 1986-04-10 | Konishiroku Photo Ind | Photosensitive compositions |
JPS57178242A (en) | 1981-04-27 | 1982-11-02 | Konishiroku Photo Ind Co Ltd | Photosensitive lithographic plate |
JPS5811932A (ja) * | 1981-07-15 | 1983-01-22 | Konishiroku Photo Ind Co Ltd | 感光性組成物 |
JPS5818625A (ja) * | 1981-07-28 | 1983-02-03 | Mitsubishi Chem Ind Ltd | 感光性組成物 |
US4421841A (en) * | 1981-07-28 | 1983-12-20 | Mitsubishi Chemical Industries Limited | Photosensitive lithographic plate with sulfonate containing photosensitive polyester |
JPS58173740A (ja) * | 1982-04-05 | 1983-10-12 | Mitsubishi Chem Ind Ltd | 感光性組成物 |
US4365019A (en) * | 1981-08-06 | 1982-12-21 | Eastman Kodak Company | Positive-working resist quinone diazide containing composition and imaging method having improved development rates |
JPS58150948A (ja) * | 1982-03-03 | 1983-09-07 | Dainippon Ink & Chem Inc | 感光性組成物 |
US4439516A (en) * | 1982-03-15 | 1984-03-27 | Shipley Company Inc. | High temperature positive diazo photoresist processing using polyvinyl phenol |
US4499171A (en) * | 1982-04-20 | 1985-02-12 | Japan Synthetic Rubber Co., Ltd. | Positive type photosensitive resin composition with at least two o-quinone diazides |
JPS5937539A (ja) * | 1982-08-26 | 1984-03-01 | Mitsubishi Chem Ind Ltd | 感光性平版印刷版 |
JPS59108037A (ja) * | 1982-12-10 | 1984-06-22 | Isuzu Motors Ltd | 樹脂塗装用プライマ− |
JPS59155838A (ja) * | 1983-02-24 | 1984-09-05 | Tokyo Ohka Kogyo Co Ltd | ポジ型感光性塗膜形成用組成物 |
JPS59166947A (ja) * | 1983-03-14 | 1984-09-20 | Japan Synthetic Rubber Co Ltd | 電離放射線用ネガ型レジスト |
JPS59180539A (ja) * | 1983-03-31 | 1984-10-13 | Fujitsu Ltd | 微細パタ−ン形成用ネガ型レジスト |
US4526856A (en) * | 1983-05-23 | 1985-07-02 | Allied Corporation | Low striation positive diazoketone resist composition with cyclic ketone(s) and aliphatic alcohol as solvents |
DE3323343A1 (de) * | 1983-06-29 | 1985-01-10 | Hoechst Ag, 6230 Frankfurt | Lichtempfindliches gemisch und daraus hergestelltes kopiermaterial |
JPS6024545A (ja) * | 1983-07-21 | 1985-02-07 | Japan Synthetic Rubber Co Ltd | ポジ型感光性樹脂組成物 |
JPH0658529B2 (ja) * | 1983-08-17 | 1994-08-03 | 三菱化成株式会社 | ポジ型クレゾ−ルノボラツクフオトレジスト組成物 |
US4626491A (en) | 1983-10-07 | 1986-12-02 | J. T. Baker Chemical Company | Deep ultra-violet lithographic resist composition and process of using |
JPS60104940A (ja) * | 1983-11-14 | 1985-06-10 | Fuji Photo Film Co Ltd | 感光材料の製造方法 |
JPS60121445A (ja) * | 1983-12-06 | 1985-06-28 | Japan Synthetic Rubber Co Ltd | 集積回路作製用ポジ型感光性樹脂組成物 |
JPS60136034A (ja) * | 1983-12-23 | 1985-07-19 | Sony Corp | 磁気記録媒体 |
DE3586263D1 (de) * | 1984-03-07 | 1992-08-06 | Ciba Geigy Ag | Verfahren zur herstellung von abbildungen. |
JPS60245450A (ja) * | 1984-05-18 | 1985-12-05 | Matsushita Electric Ind Co Ltd | 小型モ−タ |
DE3421160A1 (de) | 1984-06-07 | 1985-12-12 | Hoechst Ag, 6230 Frankfurt | Positiv arbeitende strahlungsempfindliche beschichtungsloesung |
US4550069A (en) * | 1984-06-11 | 1985-10-29 | American Hoechst Corporation | Positive photoresist compositions with o-quinone diazide, novolak, and propylene glycol alkyl ether acetate |
JPS617839A (ja) * | 1984-06-22 | 1986-01-14 | Sanritsu Kogyo Kk | ハ−ドマスク修正法 |
JPH0782236B2 (ja) * | 1984-10-12 | 1995-09-06 | 三菱化学株式会社 | 感光性組成物 |
JPH0766183B2 (ja) * | 1985-05-15 | 1995-07-19 | 三菱化学株式会社 | ポジ型フオトレジスト組成物 |
US4626492A (en) | 1985-06-04 | 1986-12-02 | Olin Hunt Specialty Products, Inc. | Positive-working o-quinone diazide photoresist composition containing a dye and a trihydroxybenzophenone compound |
JPS61289019A (ja) | 1985-06-18 | 1986-12-19 | Geran Kaihatsu Kenkyusho:Kk | 美爪エナメル除去剤 |
JPS62123444A (ja) * | 1985-08-07 | 1987-06-04 | Japan Synthetic Rubber Co Ltd | ポジ型感放射線性樹脂組成物 |
US5215857A (en) * | 1985-08-07 | 1993-06-01 | Japan Synthetic Rubber Co., Ltd. | 1,2-quinonediazide containing radiation-sensitive resin composition utilizing methyl 2-hydroxypropionate, ethyl 2-hydroxypropionate or methyl 3-methoxypropionate as the solvent |
US5238774A (en) * | 1985-08-07 | 1993-08-24 | Japan Synthetic Rubber Co., Ltd. | Radiation-sensitive composition containing 1,2-quinonediazide compound, alkali-soluble resin and monooxymonocarboxylic acid ester solvent |
EP0227487B1 (de) * | 1985-12-27 | 1992-07-15 | Japan Synthetic Rubber Co., Ltd. | Strahlungsempfindliche positiv arbeitende Kunststoffzusammensetzung |
US4845008A (en) | 1986-02-20 | 1989-07-04 | Fuji Photo Film Co., Ltd. | Light-sensitive positive working, o-guinone diazide presensitized plate with mixed solvent |
JPH0820730B2 (ja) * | 1986-10-30 | 1996-03-04 | 日本合成ゴム株式会社 | ポジ型感放射線性樹脂組成物 |
US5128230A (en) * | 1986-12-23 | 1992-07-07 | Shipley Company Inc. | Quinone diazide containing photoresist composition utilizing mixed solvent of ethyl lactate, anisole and amyl acetate |
JP2729284B2 (ja) * | 1986-12-23 | 1998-03-18 | シップレー・カンパニー・インコーポレーテッド | フォトレジスト方法及びこの方法に用いる組成物 |
ES2032892T3 (es) * | 1987-04-03 | 1993-03-01 | Sumitomo Chemical Company, Limited | Procedimiento para recuperar galio mediante una resina quelante. |
JP3139088B2 (ja) * | 1991-04-26 | 2001-02-26 | 住友化学工業株式会社 | ポジ型レジスト組成物 |
-
1986
- 1986-06-30 JP JP61153849A patent/JPS62123444A/ja active Granted
- 1986-08-06 KR KR1019860006477A patent/KR910007224B1/ko not_active IP Right Cessation
- 1986-08-07 EP EP86306125A patent/EP0211667B1/de not_active Revoked
- 1986-08-07 DE DE8686306125T patent/DE3684200D1/de not_active Expired - Lifetime
- 1986-08-07 EP EP19910111608 patent/EP0457367A1/de not_active Withdrawn
-
1989
- 1989-08-06 KR KR1019890014650A patent/KR910007223B1/ko not_active IP Right Cessation
-
1994
- 1994-02-15 US US08/196,497 patent/US5405720A/en not_active Expired - Lifetime
- 1994-12-16 US US08/357,400 patent/US5494784A/en not_active Expired - Lifetime
-
1997
- 1997-09-15 US US08/929,894 patent/US5925492A/en not_active Expired - Fee Related
-
1999
- 1999-01-27 US US09/237,660 patent/US6020104A/en not_active Expired - Fee Related
- 1999-10-08 US US09/414,724 patent/US6228554B1/en not_active Expired - Fee Related
-
2000
- 2000-08-16 US US09/638,955 patent/US6270939B1/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR870002181A (ko) | 1987-03-30 |
US6228554B1 (en) | 2001-05-08 |
US5405720A (en) | 1995-04-11 |
US6020104A (en) | 2000-02-01 |
JPS62123444A (ja) | 1987-06-04 |
KR910007224B1 (ko) | 1991-09-20 |
EP0211667A3 (en) | 1987-09-09 |
US6270939B1 (en) | 2001-08-07 |
EP0211667A2 (de) | 1987-02-25 |
EP0211667B1 (de) | 1992-03-11 |
EP0457367A1 (de) | 1991-11-21 |
KR910009134A (ko) | 1991-05-31 |
US5925492A (en) | 1999-07-20 |
US5494784A (en) | 1996-02-27 |
KR910007223B1 (ko) | 1991-09-20 |
JPH0322619B2 (de) | 1991-03-27 |
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