KR20170016014A - 액침 리소그래피에 의한 광학기기의 세정방법 - Google Patents
액침 리소그래피에 의한 광학기기의 세정방법 Download PDFInfo
- Publication number
- KR20170016014A KR20170016014A KR1020177002557A KR20177002557A KR20170016014A KR 20170016014 A KR20170016014 A KR 20170016014A KR 1020177002557 A KR1020177002557 A KR 1020177002557A KR 20177002557 A KR20177002557 A KR 20177002557A KR 20170016014 A KR20170016014 A KR 20170016014A
- Authority
- KR
- South Korea
- Prior art keywords
- optical element
- cleaning
- liquid
- immersion
- workpiece
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 238000000034 method Methods 0.000 title claims abstract description 78
- 238000000671 immersion lithography Methods 0.000 title claims abstract description 23
- 230000003287 optical effect Effects 0.000 claims abstract description 117
- 239000007788 liquid Substances 0.000 claims abstract description 109
- 238000004140 cleaning Methods 0.000 claims abstract description 92
- 238000007654 immersion Methods 0.000 claims abstract description 50
- 230000008569 process Effects 0.000 claims abstract description 26
- 238000005286 illumination Methods 0.000 claims abstract description 7
- 230000005855 radiation Effects 0.000 claims abstract 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 15
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 8
- 238000011084 recovery Methods 0.000 claims description 8
- 238000001459 lithography Methods 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000012530 fluid Substances 0.000 claims 2
- 238000000059 patterning Methods 0.000 claims 1
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
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- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
- G03F7/70891—Temperature
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70933—Purge, e.g. exchanging fluid or gas to remove pollutants
Landscapes
- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- Public Health (AREA)
- Epidemiology (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Atmospheric Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Toxicology (AREA)
- Plasma & Fusion (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Cleaning In General (AREA)
- Cleaning By Liquid Or Steam (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US46255603P | 2003-04-11 | 2003-04-11 | |
| US60/462,556 | 2003-04-11 | ||
| US48291303P | 2003-06-27 | 2003-06-27 | |
| US60/482,913 | 2003-06-27 | ||
| PCT/US2004/010309 WO2004093130A2 (en) | 2003-04-11 | 2004-04-02 | Cleanup method for optics in immersion lithography |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020157002109A Division KR101753496B1 (ko) | 2003-04-11 | 2004-04-02 | 액침 리소그래피 장치 및 액침 리소그래피 장치에 사용되는 세정 방법 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020197001257A Division KR20190007532A (ko) | 2003-04-11 | 2004-04-02 | 액침 리소그래피에 의한 광학기기의 세정방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20170016014A true KR20170016014A (ko) | 2017-02-10 |
Family
ID=33303091
Family Applications (11)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020177002557A Ceased KR20170016014A (ko) | 2003-04-11 | 2004-04-02 | 액침 리소그래피에 의한 광학기기의 세정방법 |
| KR1020127014420A Expired - Fee Related KR101289959B1 (ko) | 2003-04-11 | 2004-04-02 | 액침 리소그래피에 의한 광학기기의 세정방법 |
| KR1020117024887A Expired - Fee Related KR101508810B1 (ko) | 2003-04-11 | 2004-04-02 | 액침 리소그래피에 의한 광학기기의 세정방법 |
| KR1020137013978A Expired - Fee Related KR101525335B1 (ko) | 2003-04-11 | 2004-04-02 | 액침 리소그래피에 의한 광학기기의 세정방법 |
| KR1020147005470A Expired - Fee Related KR101597475B1 (ko) | 2003-04-11 | 2004-04-02 | 액침 리소그래피에 의한 광학기기의 세정방법 |
| KR1020117018576A Expired - Fee Related KR101324818B1 (ko) | 2003-04-11 | 2004-04-02 | 액침 리소그래피에 의한 광학기기의 세정방법 |
| KR1020127025016A Expired - Fee Related KR101318542B1 (ko) | 2003-04-11 | 2004-04-02 | 액침 리소그래피에 의한 광학기기의 세정방법 |
| KR1020117022193A Expired - Fee Related KR101508809B1 (ko) | 2003-04-11 | 2004-04-02 | 액침 리소그래피에 의한 광학기기의 세정방법 |
| KR1020197001257A Ceased KR20190007532A (ko) | 2003-04-11 | 2004-04-02 | 액침 리소그래피에 의한 광학기기의 세정방법 |
| KR1020157002109A Expired - Fee Related KR101753496B1 (ko) | 2003-04-11 | 2004-04-02 | 액침 리소그래피 장치 및 액침 리소그래피 장치에 사용되는 세정 방법 |
| KR1020057019365A Expired - Fee Related KR101342824B1 (ko) | 2003-04-11 | 2005-10-11 | 액침 리소그래피에 의한 광학기기의 세정방법 |
Family Applications After (10)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020127014420A Expired - Fee Related KR101289959B1 (ko) | 2003-04-11 | 2004-04-02 | 액침 리소그래피에 의한 광학기기의 세정방법 |
| KR1020117024887A Expired - Fee Related KR101508810B1 (ko) | 2003-04-11 | 2004-04-02 | 액침 리소그래피에 의한 광학기기의 세정방법 |
| KR1020137013978A Expired - Fee Related KR101525335B1 (ko) | 2003-04-11 | 2004-04-02 | 액침 리소그래피에 의한 광학기기의 세정방법 |
| KR1020147005470A Expired - Fee Related KR101597475B1 (ko) | 2003-04-11 | 2004-04-02 | 액침 리소그래피에 의한 광학기기의 세정방법 |
| KR1020117018576A Expired - Fee Related KR101324818B1 (ko) | 2003-04-11 | 2004-04-02 | 액침 리소그래피에 의한 광학기기의 세정방법 |
| KR1020127025016A Expired - Fee Related KR101318542B1 (ko) | 2003-04-11 | 2004-04-02 | 액침 리소그래피에 의한 광학기기의 세정방법 |
| KR1020117022193A Expired - Fee Related KR101508809B1 (ko) | 2003-04-11 | 2004-04-02 | 액침 리소그래피에 의한 광학기기의 세정방법 |
| KR1020197001257A Ceased KR20190007532A (ko) | 2003-04-11 | 2004-04-02 | 액침 리소그래피에 의한 광학기기의 세정방법 |
| KR1020157002109A Expired - Fee Related KR101753496B1 (ko) | 2003-04-11 | 2004-04-02 | 액침 리소그래피 장치 및 액침 리소그래피 장치에 사용되는 세정 방법 |
| KR1020057019365A Expired - Fee Related KR101342824B1 (ko) | 2003-04-11 | 2005-10-11 | 액침 리소그래피에 의한 광학기기의 세정방법 |
Country Status (9)
| Country | Link |
|---|---|
| US (10) | US7522259B2 (enExample) |
| EP (6) | EP2161621B1 (enExample) |
| JP (10) | JP4837556B2 (enExample) |
| KR (11) | KR20170016014A (enExample) |
| CN (4) | CN103558736B (enExample) |
| AT (1) | ATE449982T1 (enExample) |
| DE (1) | DE602004024295D1 (enExample) |
| SG (5) | SG10201803122UA (enExample) |
| WO (1) | WO2004093130A2 (enExample) |
Families Citing this family (227)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9482966B2 (en) | 2002-11-12 | 2016-11-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| EP1420299B1 (en) * | 2002-11-12 | 2011-01-05 | ASML Netherlands B.V. | Immersion lithographic apparatus and device manufacturing method |
| US10503084B2 (en) | 2002-11-12 | 2019-12-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7372541B2 (en) | 2002-11-12 | 2008-05-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| KR100588124B1 (ko) | 2002-11-12 | 2006-06-09 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피장치 및 디바이스제조방법 |
| SG121818A1 (en) | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| DE60335595D1 (de) | 2002-11-12 | 2011-02-17 | Asml Netherlands Bv | Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung |
| EP1571697A4 (en) | 2002-12-10 | 2007-07-04 | Nikon Corp | EXPOSURE SYSTEM AND DEVICE PRODUCTION METHOD |
| US7948604B2 (en) | 2002-12-10 | 2011-05-24 | Nikon Corporation | Exposure apparatus and method for producing device |
| KR101036114B1 (ko) | 2002-12-10 | 2011-05-23 | 가부시키가이샤 니콘 | 노광장치 및 노광방법, 디바이스 제조방법 |
| SG158745A1 (en) | 2002-12-10 | 2010-02-26 | Nikon Corp | Exposure apparatus and method for producing device |
| JP4352874B2 (ja) | 2002-12-10 | 2009-10-28 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
| WO2004053952A1 (ja) | 2002-12-10 | 2004-06-24 | Nikon Corporation | 露光装置及びデバイス製造方法 |
| US7242455B2 (en) | 2002-12-10 | 2007-07-10 | Nikon Corporation | Exposure apparatus and method for producing device |
| DE10261775A1 (de) | 2002-12-20 | 2004-07-01 | Carl Zeiss Smt Ag | Vorrichtung zur optischen Vermessung eines Abbildungssystems |
| EP1598855B1 (en) | 2003-02-26 | 2015-04-22 | Nikon Corporation | Exposure apparatus and method, and method of producing apparatus |
| KR101345474B1 (ko) | 2003-03-25 | 2013-12-27 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
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