KR20010107782A - 산질화막 등을 형성하는 방법 및 장치 - Google Patents
산질화막 등을 형성하는 방법 및 장치 Download PDFInfo
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- KR20010107782A KR20010107782A KR1020010029396A KR20010029396A KR20010107782A KR 20010107782 A KR20010107782 A KR 20010107782A KR 1020010029396 A KR1020010029396 A KR 1020010029396A KR 20010029396 A KR20010029396 A KR 20010029396A KR 20010107782 A KR20010107782 A KR 20010107782A
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- Prior art keywords
- reaction chamber
- gas
- heating
- temperature
- heated
- Prior art date
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- 238000000034 method Methods 0.000 title claims description 122
- 238000006243 chemical reaction Methods 0.000 claims abstract description 325
- 238000010438 heat treatment Methods 0.000 claims abstract description 268
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims abstract description 140
- 238000012545 processing Methods 0.000 claims abstract description 94
- 229960001730 nitrous oxide Drugs 0.000 claims abstract description 70
- 235000013842 nitrous oxide Nutrition 0.000 claims abstract description 70
- 239000007789 gas Substances 0.000 claims description 335
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 claims description 118
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 105
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 83
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 65
- 229910052710 silicon Inorganic materials 0.000 claims description 65
- 239000010703 silicon Substances 0.000 claims description 65
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 63
- 229910052757 nitrogen Inorganic materials 0.000 claims description 51
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 43
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 43
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 22
- 229910000077 silane Inorganic materials 0.000 claims description 20
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 17
- 229910001882 dioxygen Inorganic materials 0.000 claims description 17
- 239000001257 hydrogen Substances 0.000 claims description 13
- 229910052739 hydrogen Inorganic materials 0.000 claims description 13
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical group Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 12
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims description 11
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims description 11
- 239000010453 quartz Substances 0.000 claims description 10
- 239000000460 chlorine Substances 0.000 claims description 9
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 8
- 229910052801 chlorine Inorganic materials 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 7
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 4
- 238000009423 ventilation Methods 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 3
- 239000003575 carbonaceous material Substances 0.000 claims description 2
- 239000010408 film Substances 0.000 description 239
- 235000012431 wafers Nutrition 0.000 description 148
- 239000004065 semiconductor Substances 0.000 description 72
- 230000001965 increasing effect Effects 0.000 description 32
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 23
- 229910052760 oxygen Inorganic materials 0.000 description 23
- 239000001301 oxygen Substances 0.000 description 23
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 22
- 238000007254 oxidation reaction Methods 0.000 description 20
- 230000003647 oxidation Effects 0.000 description 19
- 238000000151 deposition Methods 0.000 description 16
- 230000008021 deposition Effects 0.000 description 15
- 235000012239 silicon dioxide Nutrition 0.000 description 13
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 12
- 239000000203 mixture Substances 0.000 description 12
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 11
- 239000012212 insulator Substances 0.000 description 11
- 238000000197 pyrolysis Methods 0.000 description 11
- 238000005979 thermal decomposition reaction Methods 0.000 description 11
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 238000005755 formation reaction Methods 0.000 description 7
- 229910021529 ammonia Inorganic materials 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 238000000354 decomposition reaction Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- -1 for example Substances 0.000 description 5
- 238000005121 nitriding Methods 0.000 description 5
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 4
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 239000007795 chemical reaction product Substances 0.000 description 3
- 239000000498 cooling water Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000003779 heat-resistant material Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000035484 reaction time Effects 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000011324 bead Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 2
- 230000002250 progressing effect Effects 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000009279 wet oxidation reaction Methods 0.000 description 1
Classifications
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/0214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
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- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02249—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by combined oxidation and nitridation performed simultaneously
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/3143—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers
- H01L21/3144—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers on silicon
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
- H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
- H01L21/31658—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe
- H01L21/31662—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe of silicon in uncombined form
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/318—Inorganic layers composed of nitrides
- H01L21/3185—Inorganic layers composed of nitrides of siliconnitrides
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- Computer Hardware Design (AREA)
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- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
Claims (31)
- 피처리체가 수용된 반응실을 소정의 온도로 가열하는 반응실가열공정과, 일산화이질소로 이루어지는 처리가스를, 산질화막의 형성이 가능한 반응온도 이상으로 가열하는 가스가열공정과,상기 가열된 반응실 내부로 상기 가열된 처리가스를 공급하여 상기 피처리체에 산질화막을 형성하는 성막공정을 구비하고,상기 반응실가열공정에서, 상기 반응실의 가열온도는, 상기 처리가스의 반응온도보다 낮게 설정되어 있는 것을 특징으로 하는 산질화막 형성방법.
- 제 1 항에 있어서, 상기 가스가열공정에서, 상기 처리가스는, 그 대략 전체량이 열분해되는 온도로까지 가열되는 것을 특징으로 하는 산질화막 형성방법.
- 제 2 항에 있어서, 상기 반응실가열공정에서, 상기 반응실은 750℃∼850℃로 가열되고, 상기 가스가열공정에서, 상기 처리가스는 900℃ 이상으로 가열되는 것을 특징으로 하는 산질화막 형성방법.
- 피처리체를 수용가능한 반응실과,상기 반응실을 소정의 온도로까지 가열가능한 반응실가열부와,상기 반응실 내부에 일산화이질소로 이루어지는 처리가스를 공급하는 공급수단과,상기 공급수단에 설치되고, 상기 처리가스가 상기 반응실 내부로 공급되기 전에 해당 처리가스를 소정의 온도로까지 가열가능한 가스가열부와,상기 가스가열부로서, 상기 처리가스를 산질화막의 형성이 가능한 반응온도이상으로 가열시킴과 동시에, 상기 반응실가열부로서, 상기 반응실을 상기 처리가스의 반응온도보다 낮은 온도로까지 가열시키는 제어수단을 구비한 것을 특징으로 하는 산질화막 형성장치.
- 제 4 항에 있어서, 상기 반응실은, 상기 피처리체를 수용하는 내관과, 이 내관을 덮도록 형성된 외관을 가지며,상기 공급수단은, 상기 처리가스를 상기 내관 내부로 공급하도록 구성되어 있는 것을 특징으로 하는 산질화막 형성장치.
- 제 4 항에 있어서, 상기 제어수단은, 상기 가스가열부로서, 상기 처리가스를 그 대략 전체량이 열분해되는 온도로까지 가열시키도록 되어 있는 것을 특징으로 하는 산질화막 형성장치.
- 제 6 항에 있어서, 상기 제어수단은, 상기 가스가열부로서, 상기 처리가스를 900℃ 이상으로 가열시키도록 되어 있는 동시에, 상기 반응실가열부로서, 상기 반응실을 750℃∼850℃로 가열시키도록 되어 있는 것을 특징으로 하는 산질화막 형성장치.
- 실리콘층이 적어도 표면부에 형성된 피처리체가 수용된 반응실을 소정의 온도로 가열하는 반응실가열공정과,수소 및 염소를 포함하는 화합물로 이루어지는 가스와, 산소가스를 포함하는 처리가스에 에너지를 부여하여 수분을 생성시키는 가스전처리공정과,상기 가열된 반응실 내부에 수분생성을 위해 에너지가 부여된 처리가스를 공급하고, 상기 피처리체의 실리콘층을 산화하여 실리콘산화막을 형성하는 성막공정을 구비한 것을 특징으로 하는 실리콘산화막 형성방법.
- 제 8 항에 있어서, 상기 가스전처리공정에서는, 상기 반응실의 가열온도에서 처리가스로부터 그 이상의 수분이 생성되지 않는 정도로까지, 수분의 생성이 이루어지는 것을 특징으로 하는 실리콘산화막 형성방법.
- 제 8 항에 있어서, 상기 가스전처리공정에서는, 상기 처리가스를 가열함으로써, 상기 처리가스에 에너지를 부여하여 수분을 생성시키도록 되어 있는 것을 특징으로 하는 실리콘산화막 형성방법.
- 제 10 항에 있어서, 상기 처리가스의 가열온도는, 상기 반응실가열공정에서의 상기 반응실의 가열온도보다 높은 것을 특징으로 하는 실리콘산화막 형성방법.
- 제 8 항에 있어서, 수소 및 염소를 포함하는 화합물로 이루어지는 가스는, 염화수소가스인 것을 특징으로 하는 실리콘산화막 형성방법.
- 실리콘층이 적어도 표면부에 형성된 피처리체를 수용가능한 반응실과,상기 반응실을 소정의 온도로까지 가열가능한 반응실가열부와,상기 반응실 내부에, 수소 및 염소를 포함하는 화합물로 이루어지는 가스와, 산소가스를 포함하는 처리가스를 공급하는 공급수단과,상기 공급수단에 설치되고, 상기 처리가스가 상기 반응실 내부로 공급되기 전에 해당 처리가스를 가열하여 수분을 생성가능한 가스가열부를 구비한 것을 특징으로 하는 실리콘산화막 형성장치.
- 제 13 항에 있어서, 상기 반응실은, 다수의 피처리체를 선반형상으로 수용가능하도록 되어 있으며,상기 반응실가열부는, 상기 반응실을 둘러싸는 히터에 의해 구성되어 있는 것을 특징으로 하는 실리콘산화막 형성장치.
- 제 13 항에 있어서, 상기 가스가열부는,통기저항체가 설치된 가열실과,상기 가열실을 둘러싸도록 설치된 히터부를 가지며,상기 히터부는, 저항발열체를 세라믹스속에 봉입하여 구성되어 있는 것을 특징으로 하는 실리콘산화막 형성장치.
- 제 15 항에 있어서, 상기 저항발열체는, 고순도의 탄소소재로 이루어지는 것을 특징으로 하는 실리콘산화막 형성장치.
- 제 15 항에 있어서, 상기 세라믹스는, 석영인 것을 특징으로 하는 실리콘산화막 형성장치.
- 실리콘층이 적어도 표면부에 형성된 피처리체가 수용된 반응실을 소정의 온도로 가열하는 반응실가열공정과,상기 반응실을 소정의 압력으로 조정하는 반응실압력조정공정과,트리메틸아민을, 상기 반응실에서의 가열에 의해 질소를 발생가능한 온도로까지 예비가열하는 가스가열공정과,상기 반응실 내부에, 상기 가열된 트리메틸아민과 실란계가스를 처리가스로서 공급하여, 상기 피처리체의 실리콘층을 질화하여 실리콘질화막을 형성하는 성막공정을 구비한 것을 특징으로 하는 실리콘질화막 형성방법.
- 제 18 항에 있어서, 상기 반응실가열공정에서, 상기 반응실은 400℃∼650℃로 가열되고, 상기 가스가열공정에서, 상기 트리메틸아민은 500∼700℃로 가열되는것을 특징으로 하는 실리콘질화막 형성방법.
- 제 18 항에 있어서, 상기 가스가열공정은, 상기 트리메틸아민을 20 kPa∼90kPa의 압력하에서 가열하도록 되어 있는 것을 특징으로 하는 실리콘질화막 형성방법.
- 실리콘층이 적어도 표면부에 형성된 피처리체를 수용가능한 반응실과,상기 반응실을 소정의 온도로까지 가열가능한 반응실가열부와,상기 반응실을 소정의 압력으로 조정가능한 반응실압력조정부와,상기 반응실 내부로 실란계가스를 공급하는 제 1 공급수단과,상기 반응실 내부로 트리메틸아민을 공급하는 제 2 공급수단과,상기 제 2 공급수단에 설치되어, 상기 트리메틸아민을 소정의 온도로까지 예비가열가능한 가스가열부와,상기 가스가열부로서, 상기 트리메틸아민을 상기 반응실에서의 가열에 의해 질소를 발생가능한 온도로까지 가열시키는 제어수단을 구비한 것을 특징으로 하는 실리콘질화막 형성장치.
- 제 21 항에 있어서, 상기 반응실은, 상기 피처리체를 수용하는 내관과, 이 내관을 덮도록 형성된 외관을 가지며,상기 제 1 공급수단은, 상기 실란계가스를 상기 내관 내부로 공급하도록 구성되어 있고,상기 제 2 공급수단은, 상기 트리메틸아민을 상기 내관 내부로 공급하도록 구성되어 있는 것을 특징으로 하는 실리콘질화막 형성장치.
- 제 21 항에 있어서, 상기 제 2 공급수단은, 상기 반응실로 연이어 통하는 공급관을 가지고 있으며,상기 공급관의 가스가열부에 대한 하류측에서, 해당 공급관의 구경이 축소된 좁은직경부가 형성되어 있는 것을 특징으로 하는 실리콘질화막 형성장치.
- 제 21 항에 있어서, 상기 제어수단은, 상기 가스가열부로서, 상기 트리메틸아민을 500∼700℃로 가열시키도록 되어 있는 동시에, 상기 반응실가열부로서, 상기 반응실을 400℃∼650℃로 가열시키도록 되어 있는 것을 특징으로 하는 실리콘질화막 형성장치.
- 제 21 항에 있어서, 상기 가스가열부는, 상기 트리메틸아민을 20kPa∼90kPa의 압력하에서 가열하도록 되어 있는 것을 특징으로 하는 실리콘질화막 형성장치.
- 실리콘층이 적어도 표면부에 형성된 피처리체가 수용된 반응실을 소정의 온도로 가열하는 반응실가열공정과,상기 반응실을 소정의 압력으로 조정하는 반응실압력조정공정과,일산화이질소를, 적어도 700℃까지 예비가열하는 가스가열공정과,상기 반응실 내부에, 상기 가열된 일산화이질소와 실란계가스를 처리가스로서 공급하고, 상기 피처리체의 실리콘층을 산화하여 실리콘산화막을 형성하는 성막공정을 구비한 것을 특징으로 하는 실리콘산화막 형성방법.
- 제 26 항에 있어서, 상기 가스가열공정에 있어서, 상기 일산화이질소는 750∼950℃로 가열되는 것을 특징으로 하는 실리콘산화막 형성방법.
- 실리콘층이 적어도 표면부에 형성된 피처리체를 수용가능한 반응실과,상기 반응실을 소정의 온도로까지 가열가능한 반응실가열부와,상기 반응실을 소정의 압력으로 조정가능한 반응실압력조정부와,상기 반응실 내부로 실란계가스를 공급하는 제 1 공급수단과,상기 반응실 내부로 일산화이질소를 공급하는 제 2 공급수단과,상기 제 2 공급수단에 설치되어, 상기 일산화이질소를 소정의 온도로까지 예비가열가능한 가스가열부와,상기 가스가열부로서, 상기 일산화이질소를 적어도 700℃까지 가열시키는 제어수단을 구비한 것을 특징으로 하는 실리콘산화막 형성장치.
- 제 28 항에 있어서, 상기 반응실은, 상기 피처리체를 수용하는 내관과, 이 내관을 덮도록 형성된 외관을 가지며,상기 제 1 공급수단은, 상기 실란계가스를 상기 내관 내부로 공급하도록 구성되어 있고,상기 제 2 공급수단은, 상기 일산화이질소를 상기 내관 내부로 공급하도록 구성되어 있는 것을 특징으로 하는 실리콘산화막 형성장치.
- 제 29 항에 있어서, 상기 제 2 공급수단은, 상기 반응실로 연이어 통하는 공급관을 가지고 있으며,상기 공급관의 가스가열부에 대한 하류측에서, 해당 공급관의 구경이 축소된 좁은직경부가 형성되어 있는 것을 특징으로 하는 실리콘산화막 형성장치.
- 제 28 항에 있어서, 상기 제어수단은, 상기 가스가열부로서, 상기 일산화이질소를 750∼950℃로 가열시키도록 되어 있는 것을 특징으로 하는 실리콘산화막 형성장치.
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JP2000157879A JP2001338923A (ja) | 2000-05-29 | 2000-05-29 | 酸窒化膜形成方法及び酸窒化膜形成装置 |
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KR1020060104509A KR100687948B1 (ko) | 2000-05-29 | 2006-10-26 | 실리콘산화막을 형성하는 방법 및 장치 |
KR1020060104505A KR100720778B1 (ko) | 2000-05-29 | 2006-10-26 | 실리콘질화막을 형성하는 방법 및 장치 |
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US (3) | US6884295B2 (ko) |
EP (1) | EP1160847A3 (ko) |
KR (4) | KR100809759B1 (ko) |
TW (1) | TW578214B (ko) |
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2001
- 2001-05-25 TW TW090112693A patent/TW578214B/zh not_active IP Right Cessation
- 2001-05-25 US US09/864,374 patent/US6884295B2/en not_active Expired - Lifetime
- 2001-05-28 KR KR1020010029396A patent/KR100809759B1/ko active IP Right Grant
- 2001-05-28 EP EP01113001A patent/EP1160847A3/en not_active Withdrawn
-
2004
- 2004-04-23 US US10/830,317 patent/US7211295B2/en not_active Expired - Lifetime
- 2004-04-23 US US10/830,315 patent/US20040209482A1/en not_active Abandoned
-
2006
- 2006-10-26 KR KR1020060104499A patent/KR100720777B1/ko active IP Right Grant
- 2006-10-26 KR KR1020060104509A patent/KR100687948B1/ko active IP Right Grant
- 2006-10-26 KR KR1020060104505A patent/KR100720778B1/ko active IP Right Grant
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100458140B1 (ko) * | 2001-06-18 | 2004-11-20 | 주성엔지니어링(주) | 반도체 소자의 박막증착장치 및 그 방법 |
Also Published As
Publication number | Publication date |
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KR20060113878A (ko) | 2006-11-03 |
US20040194707A1 (en) | 2004-10-07 |
KR100720777B1 (ko) | 2007-05-23 |
US20010046792A1 (en) | 2001-11-29 |
EP1160847A2 (en) | 2001-12-05 |
KR20060113879A (ko) | 2006-11-03 |
KR100809759B1 (ko) | 2008-03-04 |
TW578214B (en) | 2004-03-01 |
US7211295B2 (en) | 2007-05-01 |
US20040209482A1 (en) | 2004-10-21 |
KR20060113880A (ko) | 2006-11-03 |
KR100687948B1 (ko) | 2007-02-27 |
KR100720778B1 (ko) | 2007-05-23 |
EP1160847A3 (en) | 2004-12-22 |
US6884295B2 (en) | 2005-04-26 |
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