KR100720778B1 - 실리콘질화막을 형성하는 방법 및 장치 - Google Patents
실리콘질화막을 형성하는 방법 및 장치 Download PDFInfo
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- KR100720778B1 KR100720778B1 KR1020060104505A KR20060104505A KR100720778B1 KR 100720778 B1 KR100720778 B1 KR 100720778B1 KR 1020060104505 A KR1020060104505 A KR 1020060104505A KR 20060104505 A KR20060104505 A KR 20060104505A KR 100720778 B1 KR100720778 B1 KR 100720778B1
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- 238000000034 method Methods 0.000 title claims description 98
- 229910052581 Si3N4 Inorganic materials 0.000 title claims description 44
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims description 44
- 238000006243 chemical reaction Methods 0.000 claims abstract description 272
- 238000010438 heat treatment Methods 0.000 claims abstract description 219
- 238000012545 processing Methods 0.000 claims abstract description 82
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 claims description 114
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 59
- 229910052710 silicon Inorganic materials 0.000 claims description 59
- 239000010703 silicon Substances 0.000 claims description 59
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 19
- 229910000077 silane Inorganic materials 0.000 claims description 17
- 150000004767 nitrides Chemical class 0.000 claims description 3
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 abstract description 118
- 229960001730 nitrous oxide Drugs 0.000 abstract description 59
- 235000013842 nitrous oxide Nutrition 0.000 abstract description 59
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- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 12
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- 239000001257 hydrogen Substances 0.000 description 10
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- 238000005979 thermal decomposition reaction Methods 0.000 description 10
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- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 6
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- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 5
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- 150000001875 compounds Chemical class 0.000 description 4
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- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 239000007795 chemical reaction product Substances 0.000 description 3
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- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
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- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 238000009423 ventilation Methods 0.000 description 3
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
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- 238000004891 communication Methods 0.000 description 2
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- 238000005468 ion implantation Methods 0.000 description 2
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 2
- 230000002250 progressing effect Effects 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
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- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
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- 238000012360 testing method Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000009279 wet oxidation reaction Methods 0.000 description 1
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Abstract
Description
Claims (8)
- 실리콘층이 적어도 표면부에 형성된 피처리체가 수용된 반응실을 400℃∼650℃로 가열하는 반응실가열공정과,상기 반응실을 127Pa으로 조정하는 반응실압력조정공정과,트리메틸아민을, 500℃∼700℃로까지 예비가열하는 가스가열공정과,상기 반응실 내부에, 상기 가열된 트리메틸아민과 실란계가스를 처리가스로서 공급하여, 상기 피처리체의 실리콘층을 질화하여 실리콘질화막을 형성하는 성막공정을 구비한 것을 특징으로 하는 실리콘질화막 형성방법.
- 삭제
- 제 1 항에 있어서, 상기 가스가열공정은, 상기 트리메틸아민을 20 kPa∼90kPa의 압력하에서 가열하도록 되어 있는 것을 특징으로 하는 실리콘질화막 형성방법.
- 실리콘층이 적어도 표면부에 형성된 피처리체를 수용가능한 반응실과,상기 반응실을 소정의 온도로까지 가열가능한 반응실가열부와,상기 반응실을 소정의 압력으로 조정가능한 반응실압력조정부와,상기 반응실 내부로 실란계가스를 공급하는 제 1 공급수단과,상기 반응실 내부로 트리메틸아민을 공급하는 제 2 공급수단과,상기 제 2 공급수단에 설치되어, 상기 트리메틸아민을 소정의 온도로까지 예비가열가능한 가스가열부와,상기 가스가열부로서, 상기 트리메틸아민을 500℃∼700℃로까지 가열시키는 제어수단을 구비한 것을 특징으로 하는 실리콘질화막 형성장치.
- 제 4 항에 있어서, 상기 반응실은, 상기 피처리체를 수용하는 내관과, 이 내관을 덮도록 형성된 외관을 가지며,상기 제 1 공급수단은, 상기 실란계가스를 상기 내관 내부로 공급하도록 구성되어 있고,상기 제 2 공급수단은, 상기 트리메틸아민을 상기 내관 내부로 공급하도록 구성되어 있는 것을 특징으로 하는 실리콘질화막 형성장치.
- 제 4 항에 있어서, 상기 제 2 공급수단은, 상기 반응실로 연이어 통하는 공급관을 가지고 있으며,상기 공급관의 가스가열부에 대한 하류측에서, 해당 공급관의 구경이 축소된 좁은직경부가 형성되어 있는 것을 특징으로 하는 실리콘질화막 형성장치.
- 제 4 항에 있어서, 상기 제어수단은, 상기 반응실가열부로서, 상기 반응실을 400℃∼650℃로 가열시키도록 되어 있는 것을 특징으로 하는 실리콘질화막 형성장치.
- 제 4 항에 있어서, 상기 가스가열부는, 상기 트리메틸아민을 20kPa∼90kPa의 압력하에서 가열하도록 되어 있는 것을 특징으로 하는 실리콘질화막 형성장치.
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JP2000157879A JP2001338923A (ja) | 2000-05-29 | 2000-05-29 | 酸窒化膜形成方法及び酸窒化膜形成装置 |
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JP2000162950A JP3794243B2 (ja) | 2000-05-31 | 2000-05-31 | 酸化処理方法及びその装置 |
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JP2000189434A JP2002009072A (ja) | 2000-06-23 | 2000-06-23 | シリコン窒化膜の形成方法及び形成装置 |
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- 2001-05-28 EP EP01113001A patent/EP1160847A3/en not_active Withdrawn
- 2001-05-28 KR KR1020010029396A patent/KR100809759B1/ko active IP Right Grant
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KR960026365A (ko) * | 1994-12-15 | 1996-07-22 | 기다오까 다까시 | 실리콘질화막의 제조방법 |
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KR100809759B1 (ko) | 2008-03-04 |
KR100687948B1 (ko) | 2007-02-27 |
US20040209482A1 (en) | 2004-10-21 |
KR20060113880A (ko) | 2006-11-03 |
US20040194707A1 (en) | 2004-10-07 |
EP1160847A2 (en) | 2001-12-05 |
US6884295B2 (en) | 2005-04-26 |
US20010046792A1 (en) | 2001-11-29 |
TW578214B (en) | 2004-03-01 |
KR100720777B1 (ko) | 2007-05-23 |
US7211295B2 (en) | 2007-05-01 |
KR20060113879A (ko) | 2006-11-03 |
EP1160847A3 (en) | 2004-12-22 |
KR20010107782A (ko) | 2001-12-07 |
KR20060113878A (ko) | 2006-11-03 |
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