KR101691385B1 - 플렉시블 발광 장치, 전자기기 및 플렉시블 발광 장치의 제작 방법 - Google Patents
플렉시블 발광 장치, 전자기기 및 플렉시블 발광 장치의 제작 방법 Download PDFInfo
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- KR101691385B1 KR101691385B1 KR1020090098014A KR20090098014A KR101691385B1 KR 101691385 B1 KR101691385 B1 KR 101691385B1 KR 1020090098014 A KR1020090098014 A KR 1020090098014A KR 20090098014 A KR20090098014 A KR 20090098014A KR 101691385 B1 KR101691385 B1 KR 101691385B1
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
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Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
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| JPJP-P-2008-267774 | 2008-10-16 | ||
| JP2008267774 | 2008-10-16 | ||
| JPJP-P-2009-123451 | 2009-05-21 | ||
| JP2009123451 | 2009-05-21 |
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| KR1020140140457A Division KR101700321B1 (ko) | 2008-10-16 | 2014-10-17 | 발광 장치 및 전자 기기 |
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| Publication Number | Publication Date |
|---|---|
| KR20100042602A KR20100042602A (ko) | 2010-04-26 |
| KR101691385B1 true KR101691385B1 (ko) | 2017-01-02 |
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| KR1020090098014A Active KR101691385B1 (ko) | 2008-10-16 | 2009-10-15 | 플렉시블 발광 장치, 전자기기 및 플렉시블 발광 장치의 제작 방법 |
| KR1020140140457A Active KR101700321B1 (ko) | 2008-10-16 | 2014-10-17 | 발광 장치 및 전자 기기 |
| KR1020170009731A Active KR101846151B1 (ko) | 2008-10-16 | 2017-01-20 | 발광 장치 및 전자 기기 |
| KR1020180037135A Active KR101912584B1 (ko) | 2008-10-16 | 2018-03-30 | 표시 장치 및 전자 기기 |
| KR1020180123625A Active KR102015760B1 (ko) | 2008-10-16 | 2018-10-17 | 발광 장치 |
| KR1020190102170A Expired - Fee Related KR102258574B1 (ko) | 2008-10-16 | 2019-08-21 | 플렉시블 발광 장치, 전자기기 및 플렉시블 발광 장치의 제작 방법 |
| KR1020210067000A Active KR102436411B1 (ko) | 2008-10-16 | 2021-05-25 | 플렉시블 발광 장치, 전자기기 및 플렉시블 발광 장치의 제작 방법 |
| KR1020220104614A Active KR102817077B1 (ko) | 2008-10-16 | 2022-08-22 | 플렉시블 발광 장치, 전자기기 및 플렉시블 발광 장치의 제작 방법 |
| KR1020250071011A Pending KR20250084098A (ko) | 2008-10-16 | 2025-05-30 | 플렉시블 발광 장치, 전자기기 및 플렉시블 발광 장치의 제작 방법 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20210149957A (ko) * | 2020-06-02 | 2021-12-10 | 삼성디스플레이 주식회사 | 표시 장치 및 그 제조 방법 |
Families Citing this family (115)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2178133B1 (en) | 2008-10-16 | 2019-09-18 | Semiconductor Energy Laboratory Co., Ltd. | Flexible Light-Emitting Device, Electronic Device, and Method for Manufacturing Flexible-Light Emitting Device |
| JP2010153813A (ja) | 2008-11-18 | 2010-07-08 | Semiconductor Energy Lab Co Ltd | 発光装置及びその作製方法、並びに、携帯電話機 |
| TWI749283B (zh) | 2008-11-28 | 2021-12-11 | 日商半導體能源研究所股份有限公司 | 液晶顯示裝置 |
| US8576209B2 (en) | 2009-07-07 | 2013-11-05 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| JP5642447B2 (ja) * | 2009-08-07 | 2014-12-17 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| KR102246529B1 (ko) * | 2009-09-16 | 2021-04-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| KR102369012B1 (ko) | 2009-09-16 | 2022-02-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 및 이의 제조 방법 |
| US8716699B2 (en) * | 2009-10-29 | 2014-05-06 | E I Du Pont De Nemours And Company | Organic light-emitting diodes having white light emission |
| US8716700B2 (en) | 2009-10-29 | 2014-05-06 | E I Du Pont De Nemours And Company | Organic light-emitting diodes having white light emission |
| KR101125570B1 (ko) * | 2009-12-04 | 2012-03-22 | 삼성모바일디스플레이주식회사 | 유기 발광 장치 |
| TWI589042B (zh) * | 2010-01-20 | 2017-06-21 | 半導體能源研究所股份有限公司 | 發光裝置,撓性發光裝置,電子裝置,照明設備,以及發光裝置和撓性發光裝置的製造方法 |
| US9000442B2 (en) * | 2010-01-20 | 2015-04-07 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, flexible light-emitting device, electronic device, and method for manufacturing light-emitting device and flexible-light emitting device |
| US8569793B2 (en) * | 2010-04-01 | 2013-10-29 | National Tsing Hua University | Organic light-emitting diode with high color rendering |
| US8647919B2 (en) * | 2010-09-13 | 2014-02-11 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting display device and method for manufacturing the same |
| US8476622B2 (en) * | 2011-01-05 | 2013-07-02 | Electronics And Telecommunications Research Institute | Active matrix organic light emitting diode |
| KR102010429B1 (ko) | 2011-02-25 | 2019-08-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 및 발광 장치를 사용한 전자 기기 |
| KR20120102001A (ko) * | 2011-03-07 | 2012-09-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 소자 및 발광 장치 |
| JP5355618B2 (ja) * | 2011-03-10 | 2013-11-27 | 三星ディスプレイ株式會社 | 可撓性表示装置及びこの製造方法 |
| JP4976595B1 (ja) * | 2011-03-11 | 2012-07-18 | パイオニア株式会社 | 有機エレクトロルミネッセンスデバイス |
| KR101917752B1 (ko) * | 2011-05-11 | 2018-11-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 소자, 발광 모듈, 발광 패널, 발광 장치 |
| KR101320384B1 (ko) | 2011-06-30 | 2013-10-23 | 삼성디스플레이 주식회사 | 가요성 표시 패널 및 상기 가요성 표시 패널을 포함하는 표시 장치 |
| WO2013008765A1 (en) * | 2011-07-08 | 2013-01-17 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting module, light-emitting device, and method for manufacturing the light-emitting module |
| JP4982620B1 (ja) * | 2011-07-29 | 2012-07-25 | 富士フイルム株式会社 | 電界効果型トランジスタの製造方法、並びに、電界効果型トランジスタ、表示装置、イメージセンサ及びx線センサ |
| JP2013045522A (ja) * | 2011-08-22 | 2013-03-04 | Sony Corp | 表示装置およびその製造方法 |
| KR101862676B1 (ko) * | 2011-10-06 | 2018-06-01 | 삼성디스플레이 주식회사 | 유기발광 표시장치 |
| US10446629B2 (en) | 2011-10-14 | 2019-10-15 | Diftek Lasers, Inc. | Electronic device and method of making thereof |
| CN102386329B (zh) * | 2011-11-14 | 2014-04-30 | 中山大学 | 一种柔性电子器件的制作方法 |
| CN102496684B (zh) * | 2011-12-27 | 2015-08-26 | 昆山龙腾光电有限公司 | 柔性显示器 |
| JP2013251255A (ja) * | 2012-05-04 | 2013-12-12 | Semiconductor Energy Lab Co Ltd | 発光装置の作製方法 |
| KR102079188B1 (ko) | 2012-05-09 | 2020-02-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 및 전자 기기 |
| KR102082793B1 (ko) | 2012-05-10 | 2020-02-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 그 제작 방법 |
| KR101386219B1 (ko) | 2012-06-26 | 2014-04-17 | 삼성디스플레이 주식회사 | 플렉서블 표시 패널, 이를 포함하는 표시 장치 및 그 제조 방법 |
| TWI669835B (zh) | 2012-07-05 | 2019-08-21 | 日商半導體能源研究所股份有限公司 | 發光裝置 |
| US9673014B2 (en) * | 2012-07-13 | 2017-06-06 | Samsung Display Co., Ltd. | Method of manufacturing display panel |
| US20150162566A1 (en) * | 2012-07-27 | 2015-06-11 | Konica Minolta, Inc. | Organic electroluminescent element |
| JP6296187B2 (ja) * | 2012-07-31 | 2018-03-20 | 株式会社Joled | 表示装置および電子機器 |
| KR20140021096A (ko) * | 2012-08-07 | 2014-02-20 | 한국전자통신연구원 | 도핑 베리어를 가지는 자기 정렬 박막 트랜지스터 및 그 제조 방법 |
| KR102891143B1 (ko) | 2012-08-10 | 2025-11-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 정보 단말 기기 |
| US20140061610A1 (en) | 2012-08-31 | 2014-03-06 | Hyo-Young MUN | Organic light emitting device and manufacturing method thereof |
| KR101578266B1 (ko) * | 2013-03-12 | 2015-12-16 | 박진성 | 웨이퍼 레벨 칩 스케일 발광다이오드 패키지 |
| JP6490901B2 (ja) | 2013-03-14 | 2019-03-27 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法 |
| US9209207B2 (en) | 2013-04-09 | 2015-12-08 | Apple Inc. | Flexible display with bent edge regions |
| TWI692108B (zh) * | 2013-04-10 | 2020-04-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| TW201445794A (zh) * | 2013-05-27 | 2014-12-01 | Wistron Corp | 有機光電元件封裝結構以及封裝方法 |
| KR102090713B1 (ko) * | 2013-06-25 | 2020-03-19 | 삼성디스플레이 주식회사 | 가요성 표시 패널 및 상기 가요성 표시 패널의 제조 방법 |
| TWI532162B (zh) | 2013-06-25 | 2016-05-01 | 友達光電股份有限公司 | 可撓式顯示面板及其製造方法 |
| KR101429095B1 (ko) * | 2013-07-09 | 2014-08-12 | 피에스아이 주식회사 | 초소형 led 전극어셈블리를 이용한 led 램프 |
| KR102059167B1 (ko) * | 2013-07-30 | 2020-02-07 | 엘지디스플레이 주식회사 | 플렉서블 유기전계 발광소자 및 그 제조 방법 |
| KR102127791B1 (ko) * | 2013-07-31 | 2020-06-30 | 삼성디스플레이 주식회사 | 플렉서블 표시장치 |
| CN103400850B (zh) * | 2013-08-14 | 2016-01-20 | 中国科学院长春光学精密机械与物理研究所 | 用于微显示与照明的柔性led阵列器件及制作方法 |
| JP6286941B2 (ja) | 2013-08-27 | 2018-03-07 | セイコーエプソン株式会社 | 発光装置、発光装置の製造方法、電子機器 |
| CN105473577B (zh) * | 2013-08-29 | 2019-05-14 | 株式会社半导体能源研究所 | 杂环化合物、发光元件、发光装置、电子设备以及照明装置 |
| TWI671141B (zh) | 2013-08-30 | 2019-09-11 | 半導體能源研究所股份有限公司 | 支撐體供應裝置及供應支撐體的方法 |
| JP2015072770A (ja) * | 2013-10-02 | 2015-04-16 | 株式会社ジャパンディスプレイ | 有機エレクトロルミネッセンス装置及びその製造方法 |
| US9430180B2 (en) * | 2013-11-15 | 2016-08-30 | Semiconductor Energy Laboratory Co., Ltd | Display panel and electronic device |
| KR102315659B1 (ko) | 2013-11-27 | 2021-10-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
| KR102462742B1 (ko) | 2013-12-02 | 2022-11-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 그 제조방법 |
| KR102132697B1 (ko) | 2013-12-05 | 2020-07-10 | 엘지디스플레이 주식회사 | 휘어진 디스플레이 장치 |
| JP2015122148A (ja) * | 2013-12-20 | 2015-07-02 | 株式会社ジャパンディスプレイ | 有機エレクトロルミネッセンス表示装置 |
| KR20150075367A (ko) * | 2013-12-25 | 2015-07-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 전자 기기 |
| KR102347532B1 (ko) | 2014-01-23 | 2022-01-05 | 삼성디스플레이 주식회사 | 접을 수 있는 플렉서블 표시 장치 및 이의 제조 방법 |
| DE112015000866T5 (de) | 2014-02-19 | 2016-11-17 | Semiconductor Energy Laboratory Co., Ltd. | Lichtemittierende Vorrichtung und Ablöseverfahren |
| WO2015132698A1 (en) | 2014-03-06 | 2015-09-11 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
| US9660004B2 (en) * | 2014-03-21 | 2017-05-23 | Apple Inc. | Flexible displays with strengthened pad area |
| TWI831924B (zh) | 2014-04-25 | 2024-02-11 | 日商半導體能源研究所股份有限公司 | 顯示裝置及電子裝置 |
| JP6399801B2 (ja) * | 2014-05-13 | 2018-10-03 | 株式会社ジャパンディスプレイ | 有機エレクトロルミネッセンス表示装置 |
| TWI765679B (zh) * | 2014-05-30 | 2022-05-21 | 日商半導體能源研究所股份有限公司 | 觸控面板 |
| JP6727762B2 (ja) * | 2014-05-30 | 2020-07-22 | 株式会社半導体エネルギー研究所 | 発光装置及び電子機器 |
| US9660220B2 (en) * | 2014-10-24 | 2017-05-23 | Semiconductor Energy Laboratory Co., Ltd. | Multiple light-emitting element device |
| KR102439040B1 (ko) * | 2014-12-01 | 2022-09-01 | 엘지디스플레이 주식회사 | 유기 발광 디스플레이 장치 및 이를 포함하는 롤러블 유기 발광 디스플레이 시스템 |
| JP6595317B2 (ja) * | 2014-12-01 | 2019-10-23 | 株式会社半導体エネルギー研究所 | 表示装置 |
| JP6674764B2 (ja) * | 2014-12-01 | 2020-04-01 | 株式会社半導体エネルギー研究所 | 表示パネルの作製方法 |
| KR20160068672A (ko) * | 2014-12-05 | 2016-06-15 | 동우 화인켐 주식회사 | 유연 기판 및 이의 제조 방법 |
| CN104538420A (zh) * | 2014-12-12 | 2015-04-22 | 深圳市华星光电技术有限公司 | 柔性oled显示装置及其制造方法 |
| JP6432343B2 (ja) * | 2014-12-26 | 2018-12-05 | 日亜化学工業株式会社 | 発光装置の製造方法 |
| CN104485351A (zh) * | 2014-12-31 | 2015-04-01 | 深圳市华星光电技术有限公司 | 一种柔性有机发光显示器及其制作方法 |
| JP2017004642A (ja) | 2015-06-05 | 2017-01-05 | 双葉電子工業株式会社 | 可撓性有機elディバイス |
| JP2017009725A (ja) * | 2015-06-19 | 2017-01-12 | ソニー株式会社 | 表示装置 |
| KR102288354B1 (ko) * | 2015-08-10 | 2021-08-11 | 삼성디스플레이 주식회사 | 플렉서블 디스플레이 장치의 제조 방법 |
| CN105182652A (zh) * | 2015-09-25 | 2015-12-23 | 京东方科技集团股份有限公司 | 像素隔离墙、显示基板及其制作方法和显示装置 |
| TWI577251B (zh) * | 2015-12-01 | 2017-04-01 | 同泰電子科技股份有限公司 | 軟硬複合線路板及其製作方法 |
| US10312310B2 (en) * | 2016-01-19 | 2019-06-04 | Diftek Lasers, Inc. | OLED display and method of fabrication thereof |
| US10590600B1 (en) * | 2016-01-19 | 2020-03-17 | Apple Inc. | Illumination systems within fabric-based devices |
| CN105720062B (zh) | 2016-02-02 | 2018-11-06 | 京东方科技集团股份有限公司 | 可弯折显示器件的柔性基板及其制作方法 |
| KR102340066B1 (ko) | 2016-04-07 | 2021-12-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 박리 방법 및 플렉시블 디바이스의 제작 방법 |
| CN106371664B (zh) * | 2016-08-31 | 2020-03-24 | 绍兴市梓昂新材料有限公司 | 一种柔性纳米触控膜的制备方法 |
| US10528198B2 (en) | 2016-09-16 | 2020-01-07 | Semiconductor Energy Laboratory Co., Ltd. | Display panel, display device, input/output device, data processing device, and method for manufacturing the display panel |
| US10593657B2 (en) * | 2016-11-01 | 2020-03-17 | Innolux Corporation | Display devices and methods for forming the same |
| JP6890003B2 (ja) * | 2016-11-29 | 2021-06-18 | 株式会社ジャパンディスプレイ | 表示装置 |
| JP6887799B2 (ja) * | 2016-12-26 | 2021-06-16 | 株式会社ジャパンディスプレイ | 表示装置 |
| KR102597750B1 (ko) * | 2016-12-28 | 2023-11-07 | 엘지디스플레이 주식회사 | 플렉서블 표시장치 |
| KR102646618B1 (ko) * | 2017-01-11 | 2024-03-12 | 삼성디스플레이 주식회사 | 표시 장치 및 표시 장치의 제조 방법 |
| WO2018167602A1 (ja) * | 2017-03-16 | 2018-09-20 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法、及び半導体装置 |
| US20190363304A1 (en) * | 2017-03-30 | 2019-11-28 | Sharp Kabushiki Kaisha | El device producing method and el device producing device |
| CN107104200A (zh) * | 2017-04-27 | 2017-08-29 | 上海天马微电子有限公司 | 柔性显示面板及柔性显示装置 |
| CN107123666A (zh) * | 2017-05-27 | 2017-09-01 | 上海天马微电子有限公司 | 显示面板和显示装置 |
| JP6935244B2 (ja) * | 2017-06-27 | 2021-09-15 | 株式会社ジャパンディスプレイ | 表示装置、および表示装置の製造方法 |
| KR102349279B1 (ko) * | 2017-09-08 | 2022-01-11 | 삼성디스플레이 주식회사 | 디스플레이 장치 |
| JP6562054B2 (ja) * | 2017-10-02 | 2019-08-21 | セイコーエプソン株式会社 | 発光装置および電子機器 |
| KR102448325B1 (ko) | 2017-11-16 | 2022-09-30 | 삼성디스플레이 주식회사 | 표시패널 및 이를 포함하는 전자장치 |
| JP2019102153A (ja) * | 2017-11-29 | 2019-06-24 | 株式会社ジャパンディスプレイ | 発光素子、および表示装置 |
| KR102546170B1 (ko) | 2018-01-19 | 2023-06-22 | 삼성디스플레이 주식회사 | 표시 장치 |
| US10879195B2 (en) * | 2018-02-15 | 2020-12-29 | Micron Technology, Inc. | Method for substrate moisture NCF voiding elimination |
| CN109713164A (zh) * | 2018-12-29 | 2019-05-03 | 武汉天马微电子有限公司 | 显示面板以及显示装置 |
| CN109801953B (zh) * | 2019-02-15 | 2021-02-26 | 京东方科技集团股份有限公司 | 有机发光二极管显示基板、其制备方法及装置 |
| TWI706205B (zh) * | 2019-02-19 | 2020-10-01 | 陳冠宇 | 有機發光顯示裝置 |
| CN110021714A (zh) * | 2019-04-15 | 2019-07-16 | 湖畔光电科技(江苏)有限公司 | 一种oled微型显示器用透明阴极的生产工艺 |
| WO2020213174A1 (ja) * | 2019-04-19 | 2020-10-22 | シャープ株式会社 | 表示デバイスの製造方法 |
| JP2021005469A (ja) * | 2019-06-25 | 2021-01-14 | 住友化学株式会社 | 有機電子デバイスの製造方法 |
| CN111341812B (zh) * | 2020-03-10 | 2022-07-29 | 京东方科技集团股份有限公司 | 一种显示基板及其制备方法、显示装置 |
| CN113570844B (zh) * | 2020-04-28 | 2022-09-09 | 清华大学 | 激光遥控开关系统 |
| JP2023528076A (ja) * | 2020-06-08 | 2023-07-03 | ソウル バイオシス カンパニー リミテッド | 発光素子を有するユニットピクセル及びディスプレイ装置 |
| US12364073B2 (en) | 2020-06-08 | 2025-07-15 | Seoul Viosys Co., Ltd. | Unit pixel having light emitting device and displaying apparatus |
| KR102928445B1 (ko) * | 2020-10-12 | 2026-02-19 | 삼성디스플레이 주식회사 | 표시 장치 |
| CN112786802A (zh) * | 2020-12-23 | 2021-05-11 | 乐金显示光电科技(中国)有限公司 | 一种显示设备封装结构及封装板的制造方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001313164A (ja) * | 2000-04-28 | 2001-11-09 | Matsushita Electric Ind Co Ltd | 有機エレクトロルミネッセンス素子、それを用いた表示装置及び携帯端末 |
| JP2004140267A (ja) * | 2002-10-18 | 2004-05-13 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| JP2006236794A (ja) * | 2005-02-25 | 2006-09-07 | Toppan Printing Co Ltd | 有機エレクトロルミネセンス素子およびその製造方法 |
| WO2007060314A1 (fr) * | 2005-11-22 | 2007-05-31 | Commissariat A L'energie Atomique | Procede de fabrication d’un dispositif electronique flexible du type ecran comportant une pluralite de composants en couches minces |
Family Cites Families (223)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5944453B2 (ja) | 1980-12-03 | 1984-10-30 | 五洋建設株式会社 | 軟弱地盤改良における砂柱体の造成装置 |
| JPS60154730U (ja) | 1984-03-26 | 1985-10-15 | 株式会社クボタ | 焼却炉における灰シユ−ト内の付着物除去装置 |
| JPS6330015A (ja) | 1986-07-23 | 1988-02-08 | Hitachi Ltd | 弾性表面波遅延装置 |
| JPS63170892A (ja) | 1987-01-07 | 1988-07-14 | アルプス電気株式会社 | 薄膜el素子 |
| JP2742057B2 (ja) | 1988-07-14 | 1998-04-22 | シャープ株式会社 | 薄膜elパネル |
| JPH02106858A (ja) | 1988-10-14 | 1990-04-18 | Nec Corp | ブラウン管 |
| US5189405A (en) | 1989-01-26 | 1993-02-23 | Sharp Kabushiki Kaisha | Thin film electroluminescent panel |
| JPH0329291A (ja) | 1989-06-27 | 1991-02-07 | Sumitomo Bakelite Co Ltd | 有機分散型elランプ用捕水フィルム |
| JPH03238792A (ja) * | 1990-02-16 | 1991-10-24 | Nitto Denko Corp | El発光装置 |
| JPH06330015A (ja) | 1993-05-20 | 1994-11-29 | Nissan Motor Co Ltd | 接着性樹脂組成物 |
| JP3293736B2 (ja) * | 1996-02-28 | 2002-06-17 | キヤノン株式会社 | 半導体基板の作製方法および貼り合わせ基体 |
| US5771562A (en) | 1995-05-02 | 1998-06-30 | Motorola, Inc. | Passivation of organic devices |
| US5686360A (en) | 1995-11-30 | 1997-11-11 | Motorola | Passivation of organic devices |
| US5811177A (en) | 1995-11-30 | 1998-09-22 | Motorola, Inc. | Passivation of electroluminescent organic devices |
| US6008506A (en) * | 1996-04-25 | 1999-12-28 | Nec Corporation | SOI optical semiconductor device |
| US5693956A (en) | 1996-07-29 | 1997-12-02 | Motorola | Inverted oleds on hard plastic substrate |
| EP1758169A3 (en) * | 1996-08-27 | 2007-05-23 | Seiko Epson Corporation | Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device, and liquid crystal display device produced by the same |
| US5789859A (en) * | 1996-11-25 | 1998-08-04 | Micron Display Technology, Inc. | Field emission display with non-evaporable getter material |
| US5952778A (en) | 1997-03-18 | 1999-09-14 | International Business Machines Corporation | Encapsulated organic light emitting device |
| JP3290375B2 (ja) | 1997-05-12 | 2002-06-10 | 松下電器産業株式会社 | 有機電界発光素子 |
| JPH1126733A (ja) * | 1997-07-03 | 1999-01-29 | Seiko Epson Corp | 薄膜デバイスの転写方法、薄膜デバイス、薄膜集積回路装置,アクティブマトリクス基板、液晶表示装置および電子機器 |
| US6198220B1 (en) | 1997-07-11 | 2001-03-06 | Emagin Corporation | Sealing structure for organic light emitting devices |
| JPH1173148A (ja) | 1997-08-27 | 1999-03-16 | Pioneer Electron Corp | 発光表示装置及びその製造方法 |
| KR100249784B1 (ko) | 1997-11-20 | 2000-04-01 | 정선종 | 고분자복합막을이용한유기물혹은고분자전기발광소자의패키징방법 |
| US6157426A (en) * | 1998-02-13 | 2000-12-05 | Ois Optical Imaging Systems, Inc. | Liquid crystal display with SiOx Ny inclusive multilayer black matrix |
| US6008872A (en) * | 1998-03-13 | 1999-12-28 | Ois Optical Imaging Systems, Inc. | High aperture liquid crystal display including thin film diodes, and method of making same |
| US6200734B1 (en) * | 1998-06-15 | 2001-03-13 | Lucent Technologies Inc. | Method for fabricating semiconductor devices |
| JP3039517B2 (ja) * | 1998-06-19 | 2000-05-08 | 日本電気株式会社 | アクティブマトリクス液晶表示装置 |
| US6146225A (en) | 1998-07-30 | 2000-11-14 | Agilent Technologies, Inc. | Transparent, flexible permeability barrier for organic electroluminescent devices |
| US6097041A (en) * | 1998-08-24 | 2000-08-01 | Kingmax Technology Inc. | Light-emitting diode with anti-reflector |
| US6268695B1 (en) * | 1998-12-16 | 2001-07-31 | Battelle Memorial Institute | Environmental barrier material for organic light emitting device and method of making |
| US6153541A (en) * | 1999-02-23 | 2000-11-28 | Vanguard International Semiconductor Corporation | Method for fabricating an oxynitride layer having anti-reflective properties and low leakage current |
| EP1041624A1 (en) * | 1999-04-02 | 2000-10-04 | Interuniversitair Microelektronica Centrum Vzw | Method of transferring ultra-thin substrates and application of the method to the manufacture of a multilayer thin film device |
| US6461899B1 (en) * | 1999-04-30 | 2002-10-08 | Semiconductor Energy Laboratory, Co., Ltd. | Oxynitride laminate “blocking layer” for thin film semiconductor devices |
| TW517260B (en) * | 1999-05-15 | 2003-01-11 | Semiconductor Energy Lab | Semiconductor device and method for its fabrication |
| GB9915648D0 (en) | 1999-07-06 | 1999-09-01 | Rolls Royce Plc | Improvement in or relating to turbine blades |
| JP3942770B2 (ja) | 1999-09-22 | 2007-07-11 | 株式会社半導体エネルギー研究所 | El表示装置及び電子装置 |
| US6413645B1 (en) | 2000-04-20 | 2002-07-02 | Battelle Memorial Institute | Ultrabarrier substrates |
| JP4562835B2 (ja) * | 1999-11-05 | 2010-10-13 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2001175198A (ja) | 1999-12-14 | 2001-06-29 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| TWM244584U (en) * | 2000-01-17 | 2004-09-21 | Semiconductor Energy Lab | Display system and electrical appliance |
| US7060153B2 (en) * | 2000-01-17 | 2006-06-13 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method of manufacturing the same |
| US20010053559A1 (en) * | 2000-01-25 | 2001-12-20 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating display device |
| TW494447B (en) * | 2000-02-01 | 2002-07-11 | Semiconductor Energy Lab | Semiconductor device and manufacturing method thereof |
| JP3862466B2 (ja) | 2000-02-29 | 2006-12-27 | 三井化学株式会社 | 透明電極 |
| TW507258B (en) * | 2000-02-29 | 2002-10-21 | Semiconductor Systems Corp | Display device and method for fabricating the same |
| US6882102B2 (en) * | 2000-02-29 | 2005-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and manufacturing method thereof |
| US6492026B1 (en) * | 2000-04-20 | 2002-12-10 | Battelle Memorial Institute | Smoothing and barrier layers on high Tg substrates |
| US7579203B2 (en) * | 2000-04-25 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| KR100386611B1 (ko) * | 2000-05-08 | 2003-06-02 | 주식회사 하이닉스반도체 | 플래쉬 메모리 셀의 어레이와 그를 이용한 데이터프로그램방법과 소거방법 |
| TW501282B (en) * | 2000-06-07 | 2002-09-01 | Semiconductor Energy Lab | Method of manufacturing semiconductor device |
| JP2002015858A (ja) | 2000-06-30 | 2002-01-18 | Sony Corp | エレクトロルミネッセンス表示装置 |
| JP4626018B2 (ja) | 2000-06-30 | 2011-02-02 | ソニー株式会社 | 有機エレクトロルミネッセンス表示装置 |
| JP4747401B2 (ja) * | 2000-08-07 | 2011-08-17 | 凸版印刷株式会社 | 有機エレクトロルミネッセンス素子及びその製造方法 |
| JP4906022B2 (ja) * | 2000-08-10 | 2012-03-28 | 株式会社半導体エネルギー研究所 | アクティブマトリクス型el表示装置及び電子機器 |
| US6825820B2 (en) | 2000-08-10 | 2004-11-30 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device |
| US7178927B2 (en) * | 2000-11-14 | 2007-02-20 | Semiconductor Energy Laboratory Co., Ltd. | Electroluminescent device having drying agent |
| US6583440B2 (en) | 2000-11-30 | 2003-06-24 | Seiko Epson Corporation | Soi substrate, element substrate, semiconductor device, electro-optical apparatus, electronic equipment, method of manufacturing the soi substrate, method of manufacturing the element substrate, and method of manufacturing the electro-optical apparatus |
| JP4507395B2 (ja) | 2000-11-30 | 2010-07-21 | セイコーエプソン株式会社 | 電気光学装置用素子基板の製造方法 |
| US6881447B2 (en) * | 2002-04-04 | 2005-04-19 | Dielectric Systems, Inc. | Chemically and electrically stabilized polymer films |
| JP4831885B2 (ja) * | 2001-04-27 | 2011-12-07 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2003086356A (ja) | 2001-09-06 | 2003-03-20 | Semiconductor Energy Lab Co Ltd | 発光装置及び電子機器 |
| US7211828B2 (en) | 2001-06-20 | 2007-05-01 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and electronic apparatus |
| TW548860B (en) | 2001-06-20 | 2003-08-21 | Semiconductor Energy Lab | Light emitting device and method of manufacturing the same |
| US6475857B1 (en) * | 2001-06-21 | 2002-11-05 | Samsung Electronics Co., Ltd. | Method of making a scalable two transistor memory device |
| TW546857B (en) * | 2001-07-03 | 2003-08-11 | Semiconductor Energy Lab | Light-emitting device, method of manufacturing a light-emitting device, and electronic equipment |
| US6982178B2 (en) | 2002-06-10 | 2006-01-03 | E Ink Corporation | Components and methods for use in electro-optic displays |
| JP4027740B2 (ja) | 2001-07-16 | 2007-12-26 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| TW564471B (en) | 2001-07-16 | 2003-12-01 | Semiconductor Energy Lab | Semiconductor device and peeling off method and method of manufacturing semiconductor device |
| JP2003109773A (ja) * | 2001-07-27 | 2003-04-11 | Semiconductor Energy Lab Co Ltd | 発光装置、半導体装置およびそれらの作製方法 |
| KR20030011986A (ko) | 2001-07-30 | 2003-02-12 | 엘지.필립스 엘시디 주식회사 | 유기전계발광소자 |
| TW558743B (en) * | 2001-08-22 | 2003-10-21 | Semiconductor Energy Lab | Peeling method and method of manufacturing semiconductor device |
| US6653053B2 (en) * | 2001-08-27 | 2003-11-25 | Motorola, Inc. | Method of forming a pattern on a semiconductor wafer using an attenuated phase shifting reflective mask |
| JP2003203925A (ja) | 2001-10-26 | 2003-07-18 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| KR100944886B1 (ko) * | 2001-10-30 | 2010-03-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제조 방법 |
| TWI264121B (en) | 2001-11-30 | 2006-10-11 | Semiconductor Energy Lab | A display device, a method of manufacturing a semiconductor device, and a method of manufacturing a display device |
| JP2003229548A (ja) | 2001-11-30 | 2003-08-15 | Semiconductor Energy Lab Co Ltd | 乗物、表示装置、および半導体装置の作製方法 |
| AU2002360518A1 (en) | 2001-12-12 | 2003-06-23 | Universal Display Corporation | Intelligent multi-media display communication system |
| US7050835B2 (en) | 2001-12-12 | 2006-05-23 | Universal Display Corporation | Intelligent multi-media display communication system |
| US7265807B2 (en) | 2001-12-13 | 2007-09-04 | Koninklijke Philips Electronics N.V. | Sealing structure for display devices |
| US6815723B2 (en) * | 2001-12-28 | 2004-11-09 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device, method of manufacturing the same, and manufacturing apparatus therefor |
| KR100484591B1 (ko) | 2001-12-29 | 2005-04-20 | 엘지.필립스 엘시디 주식회사 | 능동행렬 유기전기발광소자 및 그의 제조 방법 |
| US6835954B2 (en) | 2001-12-29 | 2004-12-28 | Lg.Philips Lcd Co., Ltd. | Active matrix organic electroluminescent display device |
| US6933520B2 (en) | 2002-02-13 | 2005-08-23 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| JP3942017B2 (ja) | 2002-03-25 | 2007-07-11 | 富士フイルム株式会社 | 発光素子 |
| JP2003282238A (ja) * | 2002-03-25 | 2003-10-03 | Pioneer Electronic Corp | 有機エレクトロルミネッセンス表示パネル及び製造方法 |
| US20050174045A1 (en) * | 2002-04-04 | 2005-08-11 | Dielectric Systems, Inc. | Organic light-emitting device display having a plurality of passive polymer layers |
| JP4463493B2 (ja) | 2002-04-15 | 2010-05-19 | 株式会社半導体エネルギー研究所 | 表示装置及びその作製方法 |
| JP2003323132A (ja) | 2002-04-30 | 2003-11-14 | Sony Corp | 薄膜デバイスの製造方法および半導体装置 |
| US7649674B2 (en) | 2002-06-10 | 2010-01-19 | E Ink Corporation | Electro-optic display with edge seal |
| US7091110B2 (en) * | 2002-06-12 | 2006-08-15 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device by gettering using a anti-diffusion layer |
| US6642092B1 (en) | 2002-07-11 | 2003-11-04 | Sharp Laboratories Of America, Inc. | Thin-film transistors formed on a metal foil substrate |
| AU2003254851A1 (en) | 2002-08-07 | 2004-02-25 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Laminate having adherent layer and laminate having protective film |
| JP2004087253A (ja) | 2002-08-26 | 2004-03-18 | Toyota Central Res & Dev Lab Inc | 有機電子デバイス |
| JP2004103337A (ja) | 2002-09-06 | 2004-04-02 | Semiconductor Energy Lab Co Ltd | 発光装置およびその作製方法 |
| JP2004103442A (ja) * | 2002-09-11 | 2004-04-02 | Ulvac Japan Ltd | 有機el素子及びその製造方法 |
| US7196692B2 (en) | 2002-09-30 | 2007-03-27 | Brother Kogyo Kabushiki Kaisha | Input device provided with windable display and foldable keyboard, and personal computer provided with the input device |
| JP2004118794A (ja) | 2002-09-30 | 2004-04-15 | Brother Ind Ltd | 巻込可能なディスプレイと折畳可能なキーボードを備えた入力装置並びにその入力装置を備えたパーソナルコンピュータ |
| US7936338B2 (en) * | 2002-10-01 | 2011-05-03 | Sony Corporation | Display unit and its manufacturing method |
| JP2005123205A (ja) | 2002-10-24 | 2005-05-12 | Toyota Industries Corp | 有機el素子 |
| JP2004200141A (ja) | 2002-10-24 | 2004-07-15 | Toyota Industries Corp | 有機el素子 |
| JP3997888B2 (ja) * | 2002-10-25 | 2007-10-24 | セイコーエプソン株式会社 | 電気光学装置、電気光学装置の製造方法及び電子機器 |
| JP2004170554A (ja) * | 2002-11-18 | 2004-06-17 | Victor Co Of Japan Ltd | 反射型液晶表示装置 |
| JP2004207479A (ja) * | 2002-12-25 | 2004-07-22 | Pioneer Electronic Corp | 半導体レーザ装置及びその製造方法 |
| TWI330269B (en) * | 2002-12-27 | 2010-09-11 | Semiconductor Energy Lab | Separating method |
| KR101033797B1 (ko) | 2003-01-15 | 2011-05-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 박리 방법 및 그 박리 방법을 사용한 표시 장치의 제작 방법 |
| CN1739129A (zh) | 2003-01-15 | 2006-02-22 | 株式会社半导体能源研究所 | 剥离方法及采用该剥离方法的显示装置的制造方法 |
| JP4801579B2 (ja) | 2003-01-15 | 2011-10-26 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法 |
| JP2004247373A (ja) * | 2003-02-12 | 2004-09-02 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| JP4515034B2 (ja) * | 2003-02-28 | 2010-07-28 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| EP1468774B1 (en) * | 2003-02-28 | 2009-04-15 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation method, laser irradiation apparatus, and method for manufacturing semiconductor device |
| JP2004288624A (ja) | 2003-03-03 | 2004-10-14 | Sanyo Electric Co Ltd | エレクトロルミネッセンス表示装置 |
| JP4325249B2 (ja) * | 2003-03-31 | 2009-09-02 | 凸版印刷株式会社 | 有機エレクトロルミネッセンス素子の製造方法 |
| JP4373115B2 (ja) * | 2003-04-04 | 2009-11-25 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| FR2853623B1 (fr) | 2003-04-10 | 2006-03-03 | Intertechnique Sa | Dispositif de rangement pour equipement de secours |
| JP4062171B2 (ja) * | 2003-05-28 | 2008-03-19 | ソニー株式会社 | 積層構造の製造方法 |
| US20060145603A1 (en) | 2003-06-25 | 2006-07-06 | Yoshio Taniguchi | Organic electroluminescence element, process for fabricating the same and electrode film |
| JP4820536B2 (ja) | 2003-06-25 | 2011-11-24 | 彬雄 谷口 | 有機エレクトロルミネッセンス素子の製造方法 |
| JP4184189B2 (ja) * | 2003-08-13 | 2008-11-19 | 株式会社 日立ディスプレイズ | 発光型表示装置 |
| CN100499035C (zh) * | 2003-10-03 | 2009-06-10 | 株式会社半导体能源研究所 | 半导体器件的制造方法 |
| JP3994994B2 (ja) | 2003-10-23 | 2007-10-24 | セイコーエプソン株式会社 | 有機el装置の製造方法、有機el装置、電子機器 |
| US7229900B2 (en) * | 2003-10-28 | 2007-06-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, method of manufacturing thereof, and method of manufacturing base material |
| KR101061730B1 (ko) * | 2003-11-28 | 2011-09-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 및 그 제조 방법 |
| CN100583193C (zh) * | 2003-11-28 | 2010-01-20 | 株式会社半导体能源研究所 | 制造显示设备的方法 |
| US7084045B2 (en) * | 2003-12-12 | 2006-08-01 | Seminconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| JP2005210103A (ja) | 2003-12-26 | 2005-08-04 | Semiconductor Energy Lab Co Ltd | レーザ照射装置、レーザ照射方法及び結晶質半導体膜の作製方法 |
| KR100529846B1 (ko) * | 2003-12-26 | 2005-11-22 | 엘지.필립스 엘시디 주식회사 | 듀얼패널타입 유기전계발광 소자 및 그 제조방법 |
| EP1547719A3 (en) | 2003-12-26 | 2009-01-28 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus, laser irradiation method, and method for manufacturing crystalline semiconductor film |
| EP1712109A4 (en) | 2003-12-30 | 2008-03-19 | Agency Science Tech & Res | FLEXIBLE ELECTROLUMINESCENT FACILITIES |
| KR100712098B1 (ko) | 2004-01-13 | 2007-05-02 | 삼성에스디아이 주식회사 | 백색 발광 유기전계발광소자 및 그를 구비하는유기전계발광표시장치 |
| JP2005303262A (ja) | 2004-03-18 | 2005-10-27 | Sharp Corp | アクティブマトリクス基板、その製造装置、及び表示デバイス |
| JP4970934B2 (ja) * | 2004-03-19 | 2012-07-11 | 出光興産株式会社 | 有機エレクトロルミネッセンス素子 |
| US7282380B2 (en) * | 2004-03-25 | 2007-10-16 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| CN1961613B (zh) | 2004-03-26 | 2011-06-29 | 松下电工株式会社 | 有机发光器件 |
| US20070090387A1 (en) * | 2004-03-29 | 2007-04-26 | Articulated Technologies, Llc | Solid state light sheet and encapsulated bare die semiconductor circuits |
| US7259030B2 (en) * | 2004-03-29 | 2007-08-21 | Articulated Technologies, Llc | Roll-to-roll fabricated light sheet and encapsulated semiconductor circuit devices |
| US7220489B1 (en) * | 2004-04-16 | 2007-05-22 | Lockheed Martin Corporation | Layered structures for optical reflectors |
| US7521368B2 (en) | 2004-05-07 | 2009-04-21 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| JP5025095B2 (ja) * | 2004-05-07 | 2012-09-12 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US8018152B2 (en) * | 2004-05-20 | 2011-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element including intermediate conductive layer having a hole-injection layer with an island-like structure |
| US7202504B2 (en) * | 2004-05-20 | 2007-04-10 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element and display device |
| CN1965613B (zh) | 2004-05-21 | 2010-06-16 | 株式会社半导体能源研究所 | 发光元件及使用该元件的发光装置 |
| JP4589035B2 (ja) | 2004-06-02 | 2010-12-01 | 株式会社 日立ディスプレイズ | 有機el表示装置 |
| US20050269943A1 (en) * | 2004-06-04 | 2005-12-08 | Michael Hack | Protected organic electronic devices and methods for making the same |
| KR100721554B1 (ko) * | 2004-07-22 | 2007-05-23 | 삼성에스디아이 주식회사 | 유기 전계 발광 소자 및 그의 제조 방법 |
| US8217396B2 (en) * | 2004-07-30 | 2012-07-10 | Semiconductor Energy Laboratory Co., Ltd. | Display device comprising electrode layer contacting wiring in the connection region and extending to pixel region |
| US7033960B1 (en) * | 2004-08-16 | 2006-04-25 | Advanced Micro Devices, Inc. | Multi-chamber deposition of silicon oxynitride film for patterning |
| TWI287025B (en) | 2004-08-31 | 2007-09-21 | Nippon Catalytic Chem Ind | Optical sheet form thermoplastic resin molded product |
| JP4825409B2 (ja) * | 2004-08-31 | 2011-11-30 | 株式会社日本触媒 | 光学用面状熱可塑性樹脂成形体、これを用いる偏光板および液晶表示装置 |
| US8350466B2 (en) * | 2004-09-17 | 2013-01-08 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
| US20080000388A1 (en) | 2004-10-22 | 2008-01-03 | Yoshiyuki Abe | Gas Barrier Transparent Resin Substrate Method for Manufacturing Thereof, and Flexible Display Element Using Barrier Transparent Resin Substrate |
| JP2006156972A (ja) * | 2004-10-28 | 2006-06-15 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
| US8058652B2 (en) | 2004-10-28 | 2011-11-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device used as electro-optical device having channel formation region containing first element, and source or drain region containing second element |
| JP2006127986A (ja) | 2004-10-29 | 2006-05-18 | Sanyo Electric Co Ltd | 有機エレクトロルミネッセンス素子、その製造方法および有機エレクトロルミネッセンス装置 |
| US20060091397A1 (en) * | 2004-11-04 | 2006-05-04 | Kengo Akimoto | Display device and method for manufacturing the same |
| US7575959B2 (en) * | 2004-11-26 | 2009-08-18 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
| JP4496949B2 (ja) | 2004-12-13 | 2010-07-07 | 株式会社豊田自動織機 | 有機el素子 |
| JP2006222071A (ja) * | 2005-01-17 | 2006-08-24 | Seiko Epson Corp | 発光装置、発光装置の製造方法、及び電子機器 |
| US7579224B2 (en) * | 2005-01-21 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a thin film semiconductor device |
| US8604547B2 (en) * | 2005-02-10 | 2013-12-10 | Semiconductor Energy Laboratory Co., Ltd. | Memory element and semiconductor device |
| US7566633B2 (en) * | 2005-02-25 | 2009-07-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| JP5117667B2 (ja) | 2005-02-28 | 2013-01-16 | カシオ計算機株式会社 | 薄膜トランジスタパネル |
| JP4425167B2 (ja) | 2005-03-22 | 2010-03-03 | 富士フイルム株式会社 | ガスバリア性フィルム、基材フィルムおよび有機エレクトロルミネッセンス素子 |
| JP2006278241A (ja) | 2005-03-30 | 2006-10-12 | Tohoku Pioneer Corp | 自発光パネル及びその製造方法 |
| JP2006337997A (ja) | 2005-05-02 | 2006-12-14 | Semiconductor Energy Lab Co Ltd | 表示装置 |
| EP1720149A3 (en) | 2005-05-02 | 2007-06-27 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| US7485511B2 (en) * | 2005-06-01 | 2009-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Integrated circuit device and method for manufacturing integrated circuit device |
| JP4534875B2 (ja) * | 2005-06-10 | 2010-09-01 | セイコーエプソン株式会社 | 発光素子、発光素子の製造方法、電子デバイスおよび電子機器 |
| US7820495B2 (en) * | 2005-06-30 | 2010-10-26 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US7685706B2 (en) * | 2005-07-08 | 2010-03-30 | Semiconductor Energy Laboratory Co., Ltd | Method of manufacturing a semiconductor device |
| US7492024B2 (en) * | 2005-07-15 | 2009-02-17 | Hoya Corporation Usa | Reflector for a double-pass photodetector |
| US8102111B2 (en) * | 2005-07-15 | 2012-01-24 | Seiko Epson Corporation | Electroluminescence device, method of manufacturing electroluminescence device, and electronic apparatus |
| US7738756B2 (en) * | 2005-07-21 | 2010-06-15 | Massachusetts Institute Of Technology | Energy coupled superlattice structures for silicon based lasers and modulators |
| US8138502B2 (en) * | 2005-08-05 | 2012-03-20 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and manufacturing method thereof |
| JP5121183B2 (ja) | 2005-08-31 | 2013-01-16 | 株式会社半導体エネルギー研究所 | 半導体装置及びその作製方法 |
| EP1760776B1 (en) | 2005-08-31 | 2019-12-25 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method for semiconductor device with flexible substrate |
| JP2007103028A (ja) * | 2005-09-30 | 2007-04-19 | Sanyo Electric Co Ltd | 有機エレクトロルミネッセンス表示装置 |
| WO2007043285A1 (en) * | 2005-09-30 | 2007-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
| KR100709194B1 (ko) | 2005-11-23 | 2007-04-18 | 삼성에스디아이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
| WO2007063786A1 (en) * | 2005-11-29 | 2007-06-07 | Semiconductor Energy Laboratory Co., Ltd. | Antenna and manufacturing method thereof, semiconductor device including antenna and manufacturing method thereof, and radio communication system |
| JP4539547B2 (ja) * | 2005-12-08 | 2010-09-08 | セイコーエプソン株式会社 | 発光装置、発光装置の製造方法、及び電子機器 |
| KR100714017B1 (ko) | 2005-12-14 | 2007-05-04 | 삼성에스디아이 주식회사 | 유기 발광표시장치 |
| KR101252083B1 (ko) * | 2005-12-22 | 2013-04-12 | 엘지디스플레이 주식회사 | 유기 전계발광 표시장치 및 그 제조방법 |
| JP2007213999A (ja) | 2006-02-10 | 2007-08-23 | Seiko Epson Corp | 有機el装置の製造方法及び有機el装置 |
| US8222116B2 (en) * | 2006-03-03 | 2012-07-17 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| JP2007250239A (ja) * | 2006-03-14 | 2007-09-27 | Konica Minolta Holdings Inc | 有機エレクトロルミネッセンス素子、及び有機エレクトロルミネッセンスディスプレイ |
| JP2007253589A (ja) * | 2006-03-27 | 2007-10-04 | Fujifilm Corp | バリア性フィルム基板および有機電界発光素子 |
| JP2007253588A (ja) * | 2006-03-27 | 2007-10-04 | Fujifilm Corp | バリア性フィルム基板、および、有機電界発光素子 |
| US8294224B2 (en) * | 2006-04-06 | 2012-10-23 | Micron Technology, Inc. | Devices and methods to improve carrier mobility |
| US8900970B2 (en) | 2006-04-28 | 2014-12-02 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device using a flexible substrate |
| KR100770267B1 (ko) | 2006-05-04 | 2007-10-25 | 삼성에스디아이 주식회사 | 유기전계발광소자 |
| EP1863094A2 (en) * | 2006-06-02 | 2007-12-05 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device, electronic apparatus with the light emitting device, and manufacturing method of light emitting device |
| JP2008052040A (ja) | 2006-08-24 | 2008-03-06 | Fujifilm Corp | 表示装置 |
| EP1895545B1 (en) * | 2006-08-31 | 2014-04-23 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
| KR101691274B1 (ko) | 2006-09-29 | 2016-12-29 | 오스람 오엘이디 게엠베하 | 유기 발광 소자 및 조명 장치 |
| KR100781708B1 (ko) | 2006-10-12 | 2007-12-03 | 삼성전자주식회사 | 플렉서블 표시부 및 그를 갖는 휴대 단말기 |
| WO2008047928A1 (en) | 2006-10-19 | 2008-04-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| JP5354884B2 (ja) | 2006-10-19 | 2013-11-27 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| TWI442368B (zh) | 2006-10-26 | 2014-06-21 | Semiconductor Energy Lab | 電子裝置,顯示裝置,和半導體裝置,以及其驅動方法 |
| JP5216204B2 (ja) * | 2006-10-31 | 2013-06-19 | 株式会社半導体エネルギー研究所 | 液晶表示装置及びその作製方法 |
| JP4333727B2 (ja) * | 2006-11-13 | 2009-09-16 | エプソンイメージングデバイス株式会社 | 電気光学装置、照明装置及び電子機器 |
| KR100839750B1 (ko) | 2007-01-15 | 2008-06-19 | 삼성에스디아이 주식회사 | 유기 전계 발광 표시 장치 |
| JP2008182035A (ja) * | 2007-01-24 | 2008-08-07 | Toshiba Corp | 半導体記憶装置およびその製造方法 |
| US7968382B2 (en) * | 2007-02-02 | 2011-06-28 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
| JP2008218212A (ja) | 2007-03-05 | 2008-09-18 | Pioneer Electronic Corp | 光デバイスおよびその製造方法 |
| US8591694B2 (en) * | 2007-03-23 | 2013-11-26 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing liquid crystal display device |
| KR101458899B1 (ko) * | 2007-03-28 | 2014-11-10 | 삼성디스플레이 주식회사 | 표시 장치 및 그 제조 방법 |
| JP5110265B2 (ja) | 2007-04-21 | 2012-12-26 | 株式会社ラブアース・テクノロジー | ガス器具誤使用防止自動遮断装置 |
| US7728948B2 (en) * | 2007-04-26 | 2010-06-01 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and manufacturing method |
| JP2008287119A (ja) * | 2007-05-18 | 2008-11-27 | Semiconductor Energy Lab Co Ltd | 液晶表示装置の駆動方法 |
| US8513678B2 (en) * | 2007-05-18 | 2013-08-20 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
| JP5117762B2 (ja) * | 2007-05-18 | 2013-01-16 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
| US7990060B2 (en) * | 2007-05-31 | 2011-08-02 | Lg Display Co., Ltd. | Organic light emitting display device and method of manufacturing the same |
| EP2019425A1 (en) * | 2007-07-27 | 2009-01-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| JP4858379B2 (ja) * | 2007-09-18 | 2012-01-18 | セイコーエプソン株式会社 | 発光装置および電子機器 |
| JP4893573B2 (ja) * | 2007-10-03 | 2012-03-07 | セイコーエプソン株式会社 | 発光素子、表示装置および電子機器 |
| US8434909B2 (en) * | 2007-10-09 | 2013-05-07 | Flex Lighting Ii, Llc | Light emitting display with light mixing within a film |
| JP2009123451A (ja) | 2007-11-14 | 2009-06-04 | Fuji Densen Kogyo Kk | 電線と端子のスポット溶接方法 |
| US7976908B2 (en) * | 2008-05-16 | 2011-07-12 | General Electric Company | High throughput processes and systems for barrier film deposition and/or encapsulation of optoelectronic devices |
| US8138505B2 (en) * | 2008-06-02 | 2012-03-20 | Seiko Epson Corporation | Light-emitting device, display apparatus, and electronic system |
| EP2178133B1 (en) | 2008-10-16 | 2019-09-18 | Semiconductor Energy Laboratory Co., Ltd. | Flexible Light-Emitting Device, Electronic Device, and Method for Manufacturing Flexible-Light Emitting Device |
| JP2010191283A (ja) | 2009-02-19 | 2010-09-02 | Sharp Corp | アクティブ素子基板の製造方法、アクティブ素子基板、アクティブ型表示装置 |
| KR101267529B1 (ko) * | 2010-10-30 | 2013-05-24 | 엘지디스플레이 주식회사 | 플렉서블한 유기전계 발광소자 제조 방법 |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001313164A (ja) * | 2000-04-28 | 2001-11-09 | Matsushita Electric Ind Co Ltd | 有機エレクトロルミネッセンス素子、それを用いた表示装置及び携帯端末 |
| JP2004140267A (ja) * | 2002-10-18 | 2004-05-13 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| JP2006236794A (ja) * | 2005-02-25 | 2006-09-07 | Toppan Printing Co Ltd | 有機エレクトロルミネセンス素子およびその製造方法 |
| WO2007060314A1 (fr) * | 2005-11-22 | 2007-05-31 | Commissariat A L'energie Atomique | Procede de fabrication d’un dispositif electronique flexible du type ecran comportant une pluralite de composants en couches minces |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20210149957A (ko) * | 2020-06-02 | 2021-12-10 | 삼성디스플레이 주식회사 | 표시 장치 및 그 제조 방법 |
| KR102826508B1 (ko) | 2020-06-02 | 2025-06-27 | 삼성디스플레이 주식회사 | 표시 장치 및 그 제조 방법 |
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