KR100744888B1 - 소재를 초임계 처리하기 위한 장치 및 방법 - Google Patents
소재를 초임계 처리하기 위한 장치 및 방법 Download PDFInfo
- Publication number
- KR100744888B1 KR100744888B1 KR1020027005570A KR20027005570A KR100744888B1 KR 100744888 B1 KR100744888 B1 KR 100744888B1 KR 1020027005570 A KR1020027005570 A KR 1020027005570A KR 20027005570 A KR20027005570 A KR 20027005570A KR 100744888 B1 KR100744888 B1 KR 100744888B1
- Authority
- KR
- South Korea
- Prior art keywords
- module
- supercritical
- processing module
- supercritical processing
- processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67184—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the presence of more than one transfer chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/67213—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67745—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S414/00—Material or article handling
- Y10S414/135—Associated with semiconductor wafer handling
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Extraction Or Liquid Replacement (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16312199P | 1999-11-02 | 1999-11-02 | |
| US60/163,121 | 1999-11-02 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20020047315A KR20020047315A (ko) | 2002-06-21 |
| KR100744888B1 true KR100744888B1 (ko) | 2007-08-01 |
Family
ID=22588579
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020027005569A Expired - Lifetime KR100742473B1 (ko) | 1999-11-02 | 2000-11-01 | 제 1 및 제 2 소재를 초임계 처리하는 장치 및 방법 |
| KR1020027005570A Expired - Fee Related KR100744888B1 (ko) | 1999-11-02 | 2000-11-01 | 소재를 초임계 처리하기 위한 장치 및 방법 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020027005569A Expired - Lifetime KR100742473B1 (ko) | 1999-11-02 | 2000-11-01 | 제 1 및 제 2 소재를 초임계 처리하는 장치 및 방법 |
Country Status (9)
| Country | Link |
|---|---|
| US (2) | US7060422B2 (enExample) |
| EP (2) | EP1243021A2 (enExample) |
| JP (2) | JP5073902B2 (enExample) |
| KR (2) | KR100742473B1 (enExample) |
| CN (2) | CN1192417C (enExample) |
| AU (2) | AU3267201A (enExample) |
| CA (2) | CA2387373A1 (enExample) |
| TW (1) | TW484169B (enExample) |
| WO (2) | WO2001046999A2 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20200081347A1 (en) | 2018-09-12 | 2020-03-12 | Semes Co., Ltd. | Apparatus for treating substrate |
Families Citing this family (79)
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| TW539918B (en) | 1997-05-27 | 2003-07-01 | Tokyo Electron Ltd | Removal of photoresist and photoresist residue from semiconductors using supercritical carbon dioxide process |
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| US6612317B2 (en) | 2000-04-18 | 2003-09-02 | S.C. Fluids, Inc | Supercritical fluid delivery and recovery system for semiconductor wafer processing |
| US6748960B1 (en) | 1999-11-02 | 2004-06-15 | Tokyo Electron Limited | Apparatus for supercritical processing of multiple workpieces |
| JP5073902B2 (ja) | 1999-11-02 | 2012-11-14 | 東京エレクトロン株式会社 | 多数のワークピースを超臨界処理する方法及び装置 |
| US6890853B2 (en) | 2000-04-25 | 2005-05-10 | Tokyo Electron Limited | Method of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module |
| KR100750018B1 (ko) * | 2000-07-26 | 2007-08-16 | 동경 엘렉트론 주식회사 | 반도체 기판의 처리를 위한 고압 챔버 및 반도체 기판의고압 처리를 위한 장치 |
| US6562146B1 (en) | 2001-02-15 | 2003-05-13 | Micell Technologies, Inc. | Processes for cleaning and drying microelectronic structures using liquid or supercritical carbon dioxide |
| AU2002303842A1 (en) * | 2001-05-22 | 2002-12-03 | Reflectivity, Inc. | A method for making a micromechanical device by removing a sacrificial layer with multiple sequential etchants |
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| US7387868B2 (en) | 2002-03-04 | 2008-06-17 | Tokyo Electron Limited | Treatment of a dielectric layer using supercritical CO2 |
| FR2838422A1 (fr) * | 2002-04-11 | 2003-10-17 | Memscap | Procede de fabrication de composants microelectromecaniques |
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| JP3861798B2 (ja) * | 2002-11-19 | 2006-12-20 | 株式会社日立ハイテクサイエンスシステムズ | レジスト現像処理装置とその方法 |
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| US7270137B2 (en) | 2003-04-28 | 2007-09-18 | Tokyo Electron Limited | Apparatus and method of securing a workpiece during high-pressure processing |
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| DE102004029077B4 (de) * | 2003-06-26 | 2010-07-22 | Samsung Electronics Co., Ltd., Suwon | Vorrichtung und Verfahren zur Entfernung eines Photoresists von einem Substrat |
| KR100505693B1 (ko) * | 2003-06-26 | 2005-08-03 | 삼성전자주식회사 | 미세 전자 소자 기판으로부터 포토레지스트 또는 유기물을세정하는 방법 |
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| US9865455B1 (en) | 2016-09-07 | 2018-01-09 | Lam Research Corporation | Nitride film formed by plasma-enhanced and thermal atomic layer deposition process |
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| US10454029B2 (en) | 2016-11-11 | 2019-10-22 | Lam Research Corporation | Method for reducing the wet etch rate of a sin film without damaging the underlying substrate |
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| KR102037918B1 (ko) * | 2017-11-28 | 2019-10-29 | 세메스 주식회사 | 기판 처리 방법 및 기판 처리 장치 |
| CN112005343B (zh) | 2018-03-02 | 2025-05-06 | 朗姆研究公司 | 使用水解的选择性沉积 |
| KR102554014B1 (ko) * | 2018-06-15 | 2023-07-11 | 삼성전자주식회사 | 저온 식각 방법 및 플라즈마 식각 장치 |
| KR102636979B1 (ko) * | 2019-04-26 | 2024-02-14 | 삼성전자주식회사 | 멀티 챔버 장치 |
| JP7546000B2 (ja) | 2019-06-04 | 2024-09-05 | ラム リサーチ コーポレーション | パターニングにおける反応性イオンエッチングのための重合保護層 |
| WO2021025874A1 (en) | 2019-08-06 | 2021-02-11 | Lam Research Corporation | Thermal atomic layer deposition of silicon-containing films |
| US12412742B2 (en) | 2020-07-28 | 2025-09-09 | Lam Research Corporation | Impurity reduction in silicon-containing films |
| WO2023283144A1 (en) | 2021-07-09 | 2023-01-12 | Lam Research Corporation | Plasma enhanced atomic layer deposition of silicon-containing films |
| KR102726735B1 (ko) | 2021-12-17 | 2024-11-05 | 삼성전자주식회사 | 기판 처리 장치 및 방법 |
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| US20200081347A1 (en) | 2018-09-12 | 2020-03-12 | Semes Co., Ltd. | Apparatus for treating substrate |
| US10908503B2 (en) | 2018-09-12 | 2021-02-02 | Semes Co., Ltd. | Apparatus for treating substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1234322A2 (en) | 2002-08-28 |
| US7060422B2 (en) | 2006-06-13 |
| JP4621400B2 (ja) | 2011-01-26 |
| EP1243021A2 (en) | 2002-09-25 |
| US6926798B2 (en) | 2005-08-09 |
| TW484169B (en) | 2002-04-21 |
| CN1192417C (zh) | 2005-03-09 |
| US20030136514A1 (en) | 2003-07-24 |
| KR20020047315A (ko) | 2002-06-21 |
| CN1387673A (zh) | 2002-12-25 |
| AU4902201A (en) | 2001-07-03 |
| JP2003518736A (ja) | 2003-06-10 |
| JP5073902B2 (ja) | 2012-11-14 |
| CA2387373A1 (en) | 2001-06-28 |
| WO2001046999A3 (en) | 2002-07-11 |
| JP2003513466A (ja) | 2003-04-08 |
| WO2001046999A2 (en) | 2001-06-28 |
| KR20020047314A (ko) | 2002-06-21 |
| CN1399790A (zh) | 2003-02-26 |
| WO2001033615A3 (en) | 2001-12-06 |
| CA2387341A1 (en) | 2001-05-10 |
| AU3267201A (en) | 2001-05-14 |
| US20030150559A1 (en) | 2003-08-14 |
| WO2001033615A2 (en) | 2001-05-10 |
| KR100742473B1 (ko) | 2007-07-25 |
| CN1175470C (zh) | 2004-11-10 |
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