JPS5732682A - Solid state image pickup element - Google Patents
Solid state image pickup elementInfo
- Publication number
- JPS5732682A JPS5732682A JP10745580A JP10745580A JPS5732682A JP S5732682 A JPS5732682 A JP S5732682A JP 10745580 A JP10745580 A JP 10745580A JP 10745580 A JP10745580 A JP 10745580A JP S5732682 A JPS5732682 A JP S5732682A
- Authority
- JP
- Japan
- Prior art keywords
- region
- electrode
- photodetecting
- transfer
- image pickup
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007787 solid Substances 0.000 title abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 3
- 229920005591 polysilicon Polymers 0.000 abstract 3
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14887—Blooming suppression
Abstract
PURPOSE:To extend the dynamic range of a solid state image pickup element by preventing the floating capacity between the photodetecting region electrode, the reading gate electrode and the transfer region electrode of the element, thereby increasing the potential of a signal charge in the photodetecting region. CONSTITUTION:Two-phase clocks are applied to polysilicon electrodes 9, 9', thereby transferring a signal charge read from a diffused region 1 formed of a photodiode to a transfer region C in a direction of the arrow P. An active region formed of the region 1, a reading gate 13 and the region C is insulated and isolated by a thick oxidized film region 3 from the adjacent active region. When the photodetecting region A is thus formed on the region not superposed with the transfer driving polysilicon electrode 9 with a polysilicon electrode 8 for driving with voltage a photodetecting region A, a floating capacity can be eliminated, the difficulty that the driving voltage is reduced by the influence of the floating capacity and the dynamic range is thus reduced can be avoided.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10745580A JPS5732682A (en) | 1980-08-04 | 1980-08-04 | Solid state image pickup element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10745580A JPS5732682A (en) | 1980-08-04 | 1980-08-04 | Solid state image pickup element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5732682A true JPS5732682A (en) | 1982-02-22 |
| JPS6117151B2 JPS6117151B2 (en) | 1986-05-06 |
Family
ID=14459595
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10745580A Granted JPS5732682A (en) | 1980-08-04 | 1980-08-04 | Solid state image pickup element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5732682A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60167365A (en) * | 1984-12-21 | 1985-08-30 | Hitachi Ltd | Solid-state image pickup element |
| CN104201180A (en) * | 2014-07-11 | 2014-12-10 | 格科微电子（上海）有限公司 | Image sensor and formation method thereof |
-
1980
- 1980-08-04 JP JP10745580A patent/JPS5732682A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60167365A (en) * | 1984-12-21 | 1985-08-30 | Hitachi Ltd | Solid-state image pickup element |
| CN104201180A (en) * | 2014-07-11 | 2014-12-10 | 格科微电子（上海）有限公司 | Image sensor and formation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6117151B2 (en) | 1986-05-06 |
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