JPS57112066A - Laminated capacitive element - Google Patents
Laminated capacitive elementInfo
- Publication number
- JPS57112066A JPS57112066A JP55187295A JP18729580A JPS57112066A JP S57112066 A JPS57112066 A JP S57112066A JP 55187295 A JP55187295 A JP 55187295A JP 18729580 A JP18729580 A JP 18729580A JP S57112066 A JPS57112066 A JP S57112066A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- capacitive element
- electrode
- instance
- cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Abstract
PURPOSE:To increase stored electric charge in a capacitive element of a MOSRAM cell and make the element smaller by a method wherein three or more conductive layers are formed on a thick selectively oxidized film with insulation layers in between and every other conductive layers are connected together. CONSTITUTION:In the case of, for instance, a n-channel 1 transistor type RAM, three phosphorus doped Si layers 5, 7, 12 are formed and piled with insulation films 6, 11 in between. The layer 5 and the layer 12 are connected together and compose a capacitive element with the layer 7. One electrode, for instance, the layer 7 (or the layer 5), of the capacitive element is connected to a n<+> diffused layer 2 to be used as a charge storing electrode and another electrode, for instance, the layer 5 (or the layer 7), is used as a grounding electrode. With above configuration, if the occupied area is the same as the conventional cell, the charging capacity can be increased and the large read out signal can be obtained, so that the malfunction can be avoided. If the capacity is the same as the conventional cell, the dimensions of the said cell can be decreased.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55187295A JPS57112066A (en) | 1980-12-29 | 1980-12-29 | Laminated capacitive element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55187295A JPS57112066A (en) | 1980-12-29 | 1980-12-29 | Laminated capacitive element |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57112066A true JPS57112066A (en) | 1982-07-12 |
JPH0320905B2 JPH0320905B2 (en) | 1991-03-20 |
Family
ID=16203491
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55187295A Granted JPS57112066A (en) | 1980-12-29 | 1980-12-29 | Laminated capacitive element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57112066A (en) |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5956754A (en) * | 1982-09-24 | 1984-04-02 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS5961956A (en) * | 1982-09-30 | 1984-04-09 | Fujitsu Ltd | Dynamic memory |
JPS59188963A (en) * | 1983-04-12 | 1984-10-26 | Nec Corp | Semiconductor device |
JPS59231851A (en) * | 1983-06-14 | 1984-12-26 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor memory cell |
JPS61129863A (en) * | 1984-11-28 | 1986-06-17 | Hitachi Ltd | Semiconductor device and manufacture thereof |
US4685197A (en) * | 1986-01-07 | 1987-08-11 | Texas Instruments Incorporated | Fabricating a stacked capacitor |
US4700457A (en) * | 1985-03-29 | 1987-10-20 | Mitsubishi Denki Kabushiki Kaisha | Method of making multilayer capacitor memory device |
US4735915A (en) * | 1983-07-05 | 1988-04-05 | Oki Electric Industry Co., Ltd. | Method of manufacturing a semiconductor random access memory element |
JPS63133565A (en) * | 1986-11-25 | 1988-06-06 | Matsushita Electronics Corp | Semiconductor storage device |
JPH0294560A (en) * | 1988-09-30 | 1990-04-05 | Toshiba Corp | Semiconductor storage device and manufacture thereof |
JPH02135772A (en) * | 1988-11-16 | 1990-05-24 | Mitsubishi Electric Corp | Semiconductor device |
US5057446A (en) * | 1990-08-06 | 1991-10-15 | Texas Instruments Incorporated | Method of making an EEPROM with improved capacitive coupling between control gate and floating gate |
US5162253A (en) * | 1991-04-05 | 1992-11-10 | Nec Corporation | Method of producing capacitive element integrated circuit |
US6403455B1 (en) | 2000-08-31 | 2002-06-11 | Samsung Austin Semiconductor, L.P. | Methods of fabricating a memory device |
US6617205B1 (en) | 1995-11-20 | 2003-09-09 | Hitachi, Ltd. | Semiconductor storage device and process for manufacturing the same |
US6689668B1 (en) | 2000-08-31 | 2004-02-10 | Samsung Austin Semiconductor, L.P. | Methods to improve density and uniformity of hemispherical grain silicon layers |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53123687A (en) * | 1977-04-04 | 1978-10-28 | Nec Corp | Binary memory element |
JPS55154762A (en) * | 1979-05-22 | 1980-12-02 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Semiconductor memory |
-
1980
- 1980-12-29 JP JP55187295A patent/JPS57112066A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53123687A (en) * | 1977-04-04 | 1978-10-28 | Nec Corp | Binary memory element |
JPS55154762A (en) * | 1979-05-22 | 1980-12-02 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Semiconductor memory |
Cited By (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5956754A (en) * | 1982-09-24 | 1984-04-02 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS5961956A (en) * | 1982-09-30 | 1984-04-09 | Fujitsu Ltd | Dynamic memory |
JPS59188963A (en) * | 1983-04-12 | 1984-10-26 | Nec Corp | Semiconductor device |
JPS59231851A (en) * | 1983-06-14 | 1984-12-26 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor memory cell |
US4735915A (en) * | 1983-07-05 | 1988-04-05 | Oki Electric Industry Co., Ltd. | Method of manufacturing a semiconductor random access memory element |
JPS61129863A (en) * | 1984-11-28 | 1986-06-17 | Hitachi Ltd | Semiconductor device and manufacture thereof |
US4700457A (en) * | 1985-03-29 | 1987-10-20 | Mitsubishi Denki Kabushiki Kaisha | Method of making multilayer capacitor memory device |
US4685197A (en) * | 1986-01-07 | 1987-08-11 | Texas Instruments Incorporated | Fabricating a stacked capacitor |
JPS63133565A (en) * | 1986-11-25 | 1988-06-06 | Matsushita Electronics Corp | Semiconductor storage device |
JPH0294560A (en) * | 1988-09-30 | 1990-04-05 | Toshiba Corp | Semiconductor storage device and manufacture thereof |
JPH02135772A (en) * | 1988-11-16 | 1990-05-24 | Mitsubishi Electric Corp | Semiconductor device |
US5057446A (en) * | 1990-08-06 | 1991-10-15 | Texas Instruments Incorporated | Method of making an EEPROM with improved capacitive coupling between control gate and floating gate |
US5162253A (en) * | 1991-04-05 | 1992-11-10 | Nec Corporation | Method of producing capacitive element integrated circuit |
US6617205B1 (en) | 1995-11-20 | 2003-09-09 | Hitachi, Ltd. | Semiconductor storage device and process for manufacturing the same |
US6791134B2 (en) | 1995-11-20 | 2004-09-14 | Hitachi, Ltd. | Semiconductor memory device and manufacturing method thereof |
US6798005B2 (en) | 1995-11-20 | 2004-09-28 | Hitachi, Ltd. | Semiconductor memory device having large storage capacity and minimal step height between memory cell and peripheral circuits |
US7196368B2 (en) | 1995-11-20 | 2007-03-27 | Renesas Technology Corp. | Semiconductor memory arrangements with crown shaped capacitor arrangements trenched in interlayer dielectric film |
US6403455B1 (en) | 2000-08-31 | 2002-06-11 | Samsung Austin Semiconductor, L.P. | Methods of fabricating a memory device |
US6689668B1 (en) | 2000-08-31 | 2004-02-10 | Samsung Austin Semiconductor, L.P. | Methods to improve density and uniformity of hemispherical grain silicon layers |
Also Published As
Publication number | Publication date |
---|---|
JPH0320905B2 (en) | 1991-03-20 |
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