DE69133413D1 - Substratträger des Vakuumtyps - Google Patents

Substratträger des Vakuumtyps

Info

Publication number
DE69133413D1
DE69133413D1 DE69133413T DE69133413T DE69133413D1 DE 69133413 D1 DE69133413 D1 DE 69133413D1 DE 69133413 T DE69133413 T DE 69133413T DE 69133413 T DE69133413 T DE 69133413T DE 69133413 D1 DE69133413 D1 DE 69133413D1
Authority
DE
Germany
Prior art keywords
substrate support
type substrate
vacuum type
vacuum
support
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69133413T
Other languages
English (en)
Inventor
Eiji Sakamoto
Ryuichi Ebinuma
Shinichi Hara
Mitsuji Marumo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP11574190A external-priority patent/JP2908516B2/ja
Priority claimed from JP3094377A external-priority patent/JPH04324658A/ja
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69133413D1 publication Critical patent/DE69133413D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/14—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T279/00—Chucks or sockets
    • Y10T279/11—Vacuum

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
DE69133413T 1990-05-07 1991-05-03 Substratträger des Vakuumtyps Expired - Lifetime DE69133413D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP11574190A JP2908516B2 (ja) 1990-05-07 1990-05-07 真空吸着式ウエハ保持装置
JP3094377A JPH04324658A (ja) 1991-04-24 1991-04-24 真空吸着式ウエハ保持装置

Publications (1)

Publication Number Publication Date
DE69133413D1 true DE69133413D1 (de) 2004-10-21

Family

ID=26435643

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69133413T Expired - Lifetime DE69133413D1 (de) 1990-05-07 1991-05-03 Substratträger des Vakuumtyps

Country Status (3)

Country Link
US (1) US5374829A (de)
EP (1) EP0456426B1 (de)
DE (1) DE69133413D1 (de)

Families Citing this family (99)

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DE4425874A1 (de) * 1994-07-09 1996-01-11 Ges Zur Foerderung Angewandter Optik Optoelektronik Quantenelektronik & Spektroskopie Ev Substratträger
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US5700725A (en) * 1995-06-26 1997-12-23 Lucent Technologies Inc. Apparatus and method for making integrated circuits
AT1527U1 (de) * 1995-07-12 1997-06-25 Sez Semiconduct Equip Zubehoer Träger für scheibenförmige gegenstände, insbesondere siliziumscheiben
WO1997003456A1 (de) * 1995-07-12 1997-01-30 Sez Semiconductor-Equipment Zubehör Für Die Halbleiterfertigung Gesellschaft Mbh Träger für scheibenförmige gegenstände, insbesondere siliziumscheiben
US5923408A (en) * 1996-01-31 1999-07-13 Canon Kabushiki Kaisha Substrate holding system and exposure apparatus using the same
US5885353A (en) * 1996-06-21 1999-03-23 Micron Technology, Inc. Thermal conditioning apparatus
US5905566A (en) * 1997-04-10 1999-05-18 International Business Machines Corporation Laser ablation top surface reference chuck
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JPH11297800A (ja) * 1998-04-09 1999-10-29 Nec Kyushu Ltd 半導体装置製造用装置
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JP2000311933A (ja) * 1999-04-27 2000-11-07 Canon Inc 基板保持装置、基板搬送システム、露光装置、塗布装置およびデバイス製造方法ならびに基板保持部クリーニング方法
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CH695405A5 (de) 1999-12-14 2006-04-28 Esec Trading Sa Die Bonder und Wire Bonder mit einer Ansaugvorrichtung zum Flachziehen und Niederhalten eines gewölbten Substrats.
JP2001332609A (ja) * 2000-03-13 2001-11-30 Nikon Corp 基板保持装置及び露光装置
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US6709721B2 (en) 2001-03-28 2004-03-23 Applied Materials Inc. Purge heater design and process development for the improvement of low k film properties
US6803780B2 (en) * 2001-07-10 2004-10-12 Solid State Measurements, Inc. Sample chuck with compound construction
EP1280188B1 (de) * 2001-07-26 2007-01-17 Canon Kabushiki Kaisha Substrathalter und ein Belichtungsapparat
US6851096B2 (en) * 2001-08-22 2005-02-01 Solid State Measurements, Inc. Method and apparatus for testing semiconductor wafers
US6796106B1 (en) 2001-08-24 2004-09-28 Drago Bulich Rotating vacuum assisted carousel for packaging cable
US7001468B1 (en) 2002-02-15 2006-02-21 Tokyo Electron Limited Pressure energized pressure vessel opening and closing device and method of providing therefor
TWI274393B (en) * 2002-04-08 2007-02-21 Acm Res Inc Electropolishing and/or electroplating apparatus and methods
US7131333B2 (en) * 2002-07-16 2006-11-07 Sonix, Inc. Pulse echo ultrasonic test chamber for tray production system
US7181969B2 (en) * 2002-07-16 2007-02-27 Sonix, Inc. Ultrasonic test chamber for tray production system and the like
US7021635B2 (en) * 2003-02-06 2006-04-04 Tokyo Electron Limited Vacuum chuck utilizing sintered material and method of providing thereof
US20040154647A1 (en) * 2003-02-07 2004-08-12 Supercritical Systems, Inc. Method and apparatus of utilizing a coating for enhanced holding of a semiconductor substrate during high pressure processing
US7077917B2 (en) 2003-02-10 2006-07-18 Tokyo Electric Limited High-pressure processing chamber for a semiconductor wafer
US7225820B2 (en) 2003-02-10 2007-06-05 Tokyo Electron Limited High-pressure processing chamber for a semiconductor wafer
US7357115B2 (en) * 2003-03-31 2008-04-15 Lam Research Corporation Wafer clamping apparatus and method for operating the same
US7270137B2 (en) 2003-04-28 2007-09-18 Tokyo Electron Limited Apparatus and method of securing a workpiece during high-pressure processing
US7110091B2 (en) * 2003-07-23 2006-09-19 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method, and device manufactured thereby
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US7186093B2 (en) * 2004-10-05 2007-03-06 Tokyo Electron Limited Method and apparatus for cooling motor bearings of a high pressure pump
EP1707325A4 (de) * 2003-12-19 2007-12-12 Matsushita Electric Ind Co Ltd Teilemontagekopf, aufnahmedüse, verfahren zur herstellung einer aufnahmedüse
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US7227619B2 (en) * 2004-04-01 2007-06-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
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JP4541807B2 (ja) * 2004-09-03 2010-09-08 Ｏｋｉセミコンダクタ株式会社 半導体素子保持装置および半導体素子の搬送方法
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CN102004293B (zh) * 2009-09-02 2014-04-23 鸿富锦精密工业（深圳）有限公司 光学元件取放装置及取放多个光学元件的方法
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JP5810517B2 (ja) * 2010-12-02 2015-11-11 富士電機株式会社 吸着装置および吸着方法
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JP5912654B2 (ja) 2012-02-24 2016-04-27 株式会社東芝 基板保持装置及びパターン転写装置並びにパターン転写方法
JP5913162B2 (ja) * 2012-04-04 2016-04-27 東京エレクトロン株式会社 基板保持装置および基板保持方法
JP5999972B2 (ja) * 2012-05-10 2016-09-28 株式会社ディスコ 保持テーブル
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JP2018533763A (ja) 2015-10-29 2018-11-15 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置用基板テーブル、および基板の装填方法
CN113376974A (zh) 2016-02-08 2021-09-10 Asml荷兰有限公司 光刻设备、用于卸载衬底的方法和用于装载衬底的方法
JP6758920B2 (ja) * 2016-06-01 2020-09-23 キヤノン株式会社 チャック、基板保持装置、パターン形成装置、及び物品の製造方法
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USD859331S1 (en) * 2017-03-31 2019-09-10 Ebara Corporation Vacuum contact pad
CN109390268B (zh) * 2017-08-10 2023-02-24 台湾积体电路制造股份有限公司 具有微粒凹口的夹盘的晶圆台、处理工具与使用晶圆台的方法
CN111418051B (zh) 2017-11-10 2024-01-12 应用材料公司 用于双面处理的图案化夹盘
CN111742402A (zh) 2018-02-20 2020-10-02 应用材料公司 用于双面处理的图案化真空吸盘
JP7210896B2 (ja) * 2018-04-23 2023-01-24 東京エレクトロン株式会社 基板載置装置及び基板載置方法
CN211350609U (zh) * 2020-01-09 2020-08-25 瑞声通讯科技(常州)有限公司 玻璃晶圆的吸附装置
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Also Published As

Publication number Publication date
EP0456426B1 (de) 2004-09-15
US5374829A (en) 1994-12-20
EP0456426A1 (de) 1991-11-13

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