JPH09162713A - 半導体集積回路 - Google Patents

半導体集積回路

Info

Publication number
JPH09162713A
JPH09162713A JP7321760A JP32176095A JPH09162713A JP H09162713 A JPH09162713 A JP H09162713A JP 7321760 A JP7321760 A JP 7321760A JP 32176095 A JP32176095 A JP 32176095A JP H09162713 A JPH09162713 A JP H09162713A
Authority
JP
Japan
Prior art keywords
potential
node
mos transistor
channel mos
power supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7321760A
Other languages
English (en)
Japanese (ja)
Inventor
Yoichi Hida
洋一 飛田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7321760A priority Critical patent/JPH09162713A/ja
Priority to TW085107407A priority patent/TW293124B/zh
Priority to TW085110768A priority patent/TW409395B/zh
Priority to TW085110769A priority patent/TW381206B/zh
Priority to TW085111317A priority patent/TW321805B/zh
Priority to US08/762,903 priority patent/US5726941A/en
Priority to US08/763,283 priority patent/US5717324A/en
Priority to US08/763,120 priority patent/US5815446A/en
Priority to US08/763,119 priority patent/US5812015A/en
Priority to CN96119753A priority patent/CN1091974C/zh
Priority to KR1019960064182A priority patent/KR100270001B1/ko
Priority to KR1019960064183A priority patent/KR100270002B1/ko
Priority to CN96119756A priority patent/CN1096118C/zh
Priority to CN96119754A priority patent/CN1079981C/zh
Priority to KR1019960064180A priority patent/KR100231951B1/ko
Priority to KR1019960064181A priority patent/KR100270000B1/ko
Priority to CN96123112A priority patent/CN1090819C/zh
Publication of JPH09162713A publication Critical patent/JPH09162713A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current 
    • G05F1/46—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC
    • G05F1/462—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC as a function of the requirements of the load, e.g. delay, temperature, specific voltage/current characteristic
    • G05F1/465—Internal voltage generators for integrated circuits, e.g. step down generators
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/247—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the supply voltage
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G11C5/146—Substrate bias generators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00—Networks using active elements
    • H03H11/02—Multiple-port networks
    • H03H11/24—Frequency-independent attenuators
    • H03H11/245—Frequency-independent attenuators using field-effect transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Electromagnetism (AREA)
  • Nonlinear Science (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Electronic Switches (AREA)
  • Logic Circuits (AREA)
  • Dc-Dc Converters (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Read Only Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Control Of Electrical Variables (AREA)
JP7321760A 1995-12-11 1995-12-11 半導体集積回路 Pending JPH09162713A (ja)

Priority Applications (17)

Application Number Priority Date Filing Date Title
JP7321760A JPH09162713A (ja) 1995-12-11 1995-12-11 半導体集積回路
TW085107407A TW293124B (en) 1995-12-11 1996-06-19 Semiconductor integrated circuit
TW085110768A TW409395B (en) 1995-12-11 1996-09-03 Potential generation circuit
TW085110769A TW381206B (en) 1995-12-11 1996-09-03 Intermediate potential generating circuit
TW085111317A TW321805B (enExample) 1995-12-11 1996-09-16
US08/762,903 US5726941A (en) 1995-12-11 1996-12-10 Semiconductor integrated circuit
US08/763,283 US5717324A (en) 1995-12-11 1996-12-10 Intermediate potential generation circuit
US08/763,120 US5815446A (en) 1995-12-11 1996-12-10 Potential generation circuit
US08/763,119 US5812015A (en) 1995-12-11 1996-12-10 Boosting pulse generation circuit for a semiconductor integrated circuit
CN96119753A CN1091974C (zh) 1995-12-11 1996-12-11 升压脉冲产生电路
KR1019960064182A KR100270001B1 (ko) 1995-12-11 1996-12-11 전위 발생 회로
KR1019960064183A KR100270002B1 (ko) 1995-12-11 1996-12-11 중간 전위 발생회로
CN96119756A CN1096118C (zh) 1995-12-11 1996-12-11 中间电位产生电路
CN96119754A CN1079981C (zh) 1995-12-11 1996-12-11 电势生成电路
KR1019960064180A KR100231951B1 (ko) 1995-12-11 1996-12-11 반도체 집적회로
KR1019960064181A KR100270000B1 (ko) 1995-12-11 1996-12-11 승압펄스 발생회로
CN96123112A CN1090819C (zh) 1995-12-11 1996-12-11 半导体集成电路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7321760A JPH09162713A (ja) 1995-12-11 1995-12-11 半導体集積回路

Publications (1)

Publication Number Publication Date
JPH09162713A true JPH09162713A (ja) 1997-06-20

Family

ID=18136144

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7321760A Pending JPH09162713A (ja) 1995-12-11 1995-12-11 半導体集積回路

Country Status (5)

Country Link
US (4) US5815446A (enExample)
JP (1) JPH09162713A (enExample)
KR (4) KR100270001B1 (enExample)
CN (4) CN1091974C (enExample)
TW (4) TW293124B (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11163701A (ja) * 1997-09-30 1999-06-18 Siemens Ag 極めて迅速なパワーオフ検出を行うパワーオン検出回路
JPH11326398A (ja) * 1998-05-08 1999-11-26 Matsushita Electron Corp 電圧検知回路
JP2015164386A (ja) * 2013-08-21 2015-09-10 株式会社半導体エネルギー研究所 チャージポンプ回路、およびそれを備えた半導体装置
JP2016021638A (ja) * 2014-07-14 2016-02-04 株式会社ソシオネクスト 半導体装置
JP2017118106A (ja) * 2015-12-18 2017-06-29 株式会社半導体エネルギー研究所 半導体装置

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US6593799B2 (en) 1997-06-20 2003-07-15 Intel Corporation Circuit including forward body bias from supply voltage and ground nodes
JP3022815B2 (ja) * 1997-07-24 2000-03-21 日本電気アイシーマイコンシステム株式会社 中間電位生成回路
US5939928A (en) * 1997-08-19 1999-08-17 Advanced Micro Devices, Inc. Fast high voltage NMOS pass gate for integrated circuit with high voltage generator
US5959444A (en) * 1997-12-12 1999-09-28 Micron Technology, Inc. MOS transistor circuit and method for biasing a voltage generator
US6232826B1 (en) * 1998-01-12 2001-05-15 Intel Corporation Charge pump avoiding gain degradation due to the body effect
JP3385960B2 (ja) * 1998-03-16 2003-03-10 日本電気株式会社 負電圧チャージポンプ回路
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JP2000149582A (ja) * 1998-09-08 2000-05-30 Toshiba Corp 昇圧回路，電圧発生回路及び半導体メモリ
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JP3799869B2 (ja) * 1999-03-30 2006-07-19 セイコーエプソン株式会社 電源回路を搭載した半導体装置並びにそれを用いた液晶装置及び電子機器
US6191643B1 (en) * 1999-03-31 2001-02-20 Sony Corporation Voltage boost circuitry for hard drive write preamplifiers
JP4960544B2 (ja) * 2000-07-06 2012-06-27 エルピーダメモリ株式会社 半導体記憶装置及びその制御方法
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KR101023268B1 (ko) * 2003-01-17 2011-03-18 티피오 홍콩 홀딩 리미티드 전하 펌프 회로 및 이 회로를 포함하는 전자 장치
JP2007527188A (ja) * 2003-06-30 2007-09-20 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 集積回路装置の保護回路
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US8335115B2 (en) * 2004-12-30 2012-12-18 Samsung Electronics Co., Ltd. Semiconductor memory module and semiconductor memory system having termination resistor units
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JP4800700B2 (ja) * 2005-08-01 2011-10-26 ルネサスエレクトロニクス株式会社 半導体装置およびそれを用いた半導体集積回路
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CN102148614B (zh) * 2010-02-10 2015-11-11 上海华虹宏力半导体制造有限公司 脉冲产生电路及方法、基准电压产生及其推动电路及方法
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CN103092245B (zh) * 2013-01-09 2014-08-20 卓捷创芯科技（深圳）有限公司 一种超低功耗的低压差稳压电源电路与射频识别标签
KR102267237B1 (ko) 2014-03-07 2021-06-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
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TWI551044B (zh) * 2015-05-15 2016-09-21 華邦電子股份有限公司 電源閘電路及其電源閘開關控制方法
CN109427309A (zh) * 2017-08-22 2019-03-05 京东方科技集团股份有限公司 源极驱动增强电路、源极驱动增强方法、源极驱动电路和显示设备
JP7000187B2 (ja) * 2018-02-08 2022-01-19 エイブリック株式会社 基準電圧回路及び半導体装置
CN110667334B (zh) * 2019-10-11 2021-03-19 广东美的制冷设备有限公司 车载空调器及其低功耗待机方法和电路
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11163701A (ja) * 1997-09-30 1999-06-18 Siemens Ag 極めて迅速なパワーオフ検出を行うパワーオン検出回路
JPH11326398A (ja) * 1998-05-08 1999-11-26 Matsushita Electron Corp 電圧検知回路
JP2015164386A (ja) * 2013-08-21 2015-09-10 株式会社半導体エネルギー研究所 チャージポンプ回路、およびそれを備えた半導体装置
JP2016021638A (ja) * 2014-07-14 2016-02-04 株式会社ソシオネクスト 半導体装置
JP2017118106A (ja) * 2015-12-18 2017-06-29 株式会社半導体エネルギー研究所 半導体装置

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US5717324A (en) 1998-02-10
TW409395B (en) 2000-10-21
TW321805B (enExample) 1997-12-01
CN1159656A (zh) 1997-09-17
CN1096118C (zh) 2002-12-11
KR970051145A (ko) 1997-07-29
KR970051294A (ko) 1997-07-29
TW293124B (en) 1996-12-11
CN1090819C (zh) 2002-09-11
KR100270001B1 (ko) 2000-10-16
CN1158500A (zh) 1997-09-03
CN1091974C (zh) 2002-10-02
US5726941A (en) 1998-03-10
US5815446A (en) 1998-09-29
KR100231951B1 (ko) 1999-12-01
KR100270000B1 (ko) 2000-10-16
TW381206B (en) 2000-02-01
US5812015A (en) 1998-09-22
KR970051173A (ko) 1997-07-29
CN1079981C (zh) 2002-02-27
CN1158516A (zh) 1997-09-03
CN1158501A (zh) 1997-09-03
KR100270002B1 (ko) 2000-10-16

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