IT1301936B1 - Circuito a pompa di carica per dispositivi integrati di memoria - Google Patents

Circuito a pompa di carica per dispositivi integrati di memoria

Info

Publication number
IT1301936B1
IT1301936B1 IT1998MI001930A ITMI981930A IT1301936B1 IT 1301936 B1 IT1301936 B1 IT 1301936B1 IT 1998MI001930 A IT1998MI001930 A IT 1998MI001930A IT MI981930 A ITMI981930 A IT MI981930A IT 1301936 B1 IT1301936 B1 IT 1301936B1
Authority
IT
Italy
Prior art keywords
memory devices
charge pump
pump circuit
integrated memory
integrated
Prior art date
Application number
IT1998MI001930A
Other languages
English (en)
Inventor
Andrea Ghilardelli
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Priority to IT1998MI001930A priority Critical patent/IT1301936B1/it
Publication of ITMI981930A0 publication Critical patent/ITMI981930A0/it
Priority to US09/378,427 priority patent/US6163487A/en
Publication of ITMI981930A1 publication Critical patent/ITMI981930A1/it
Application granted granted Critical
Publication of IT1301936B1 publication Critical patent/IT1301936B1/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Read Only Memory (AREA)
  • Dc-Dc Converters (AREA)
IT1998MI001930A 1998-08-27 1998-08-27 Circuito a pompa di carica per dispositivi integrati di memoria IT1301936B1 (it)

Priority Applications (2)

Application Number Priority Date Filing Date Title
IT1998MI001930A IT1301936B1 (it) 1998-08-27 1998-08-27 Circuito a pompa di carica per dispositivi integrati di memoria
US09/378,427 US6163487A (en) 1998-08-27 1999-08-20 Charge pump circuit for integrated memory devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT1998MI001930A IT1301936B1 (it) 1998-08-27 1998-08-27 Circuito a pompa di carica per dispositivi integrati di memoria

Publications (3)

Publication Number Publication Date
ITMI981930A0 ITMI981930A0 (it) 1998-08-27
ITMI981930A1 ITMI981930A1 (it) 2000-02-27
IT1301936B1 true IT1301936B1 (it) 2000-07-07

Family

ID=11380668

Family Applications (1)

Application Number Title Priority Date Filing Date
IT1998MI001930A IT1301936B1 (it) 1998-08-27 1998-08-27 Circuito a pompa di carica per dispositivi integrati di memoria

Country Status (2)

Country Link
US (1) US6163487A (it)
IT (1) IT1301936B1 (it)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002237197A (ja) * 2001-02-14 2002-08-23 Mitsubishi Electric Corp 半導体記憶装置
US6661682B2 (en) * 2001-02-16 2003-12-09 Imec (Interuniversitair Microelectronica Centrum) High voltage generating charge pump circuit
JP3450307B2 (ja) * 2001-02-26 2003-09-22 エヌイーシーマイクロシステム株式会社 負電圧昇圧回路
EP1262998B1 (de) * 2001-05-28 2008-02-06 Infineon Technologies AG Ladungspumpenschaltung und Verwendung einer Ladungspumpenschaltung
ITMI20021902A1 (it) * 2002-09-06 2004-03-07 Atmel Corp Architettura di pompa di carica modulare
FR2864271B1 (fr) * 2003-12-19 2006-03-03 Atmel Corp Circuit de pompe a charge a rendement eleve, a faible cout
EP1677308A1 (en) * 2005-01-03 2006-07-05 STMicroelectronics S.r.l. Low-ripple boosted voltage generator
US7561866B2 (en) * 2005-02-22 2009-07-14 Impinj, Inc. RFID tags with power rectifiers that have bias
US7385433B2 (en) 2005-03-18 2008-06-10 Stmicroelectronics, Inc. Analog switch with reduced parasitic bipolar transistor injection
US7855591B2 (en) * 2006-06-07 2010-12-21 Atmel Corporation Method and system for providing a charge pump very low voltage applications
US7652522B2 (en) * 2006-09-05 2010-01-26 Atmel Corporation High efficiency low cost bi-directional charge pump circuit for very low voltage applications
US7733161B2 (en) * 2008-02-15 2010-06-08 International Business Machines Corporation Voltage boost system, IC and design structure
US8928395B2 (en) * 2012-01-17 2015-01-06 Winbond Electronics Corp. Voltage generator
US8947158B2 (en) 2012-09-03 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US8897073B2 (en) 2012-09-14 2014-11-25 Freescale Semiconductor, Inc. NVM with charge pump and method therefor
TWI643435B (zh) 2013-08-21 2018-12-01 日商半導體能源研究所股份有限公司 電荷泵電路以及具備電荷泵電路的半導體裝置
KR102267237B1 (ko) 2014-03-07 2021-06-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
US9312280B2 (en) 2014-07-25 2016-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09162713A (ja) * 1995-12-11 1997-06-20 Mitsubishi Electric Corp 半導体集積回路
JP3403006B2 (ja) * 1997-06-24 2003-05-06 株式会社東芝 半導体集積回路装置

Also Published As

Publication number Publication date
ITMI981930A0 (it) 1998-08-27
US6163487A (en) 2000-12-19
ITMI981930A1 (it) 2000-02-27

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Legal Events

Date Code Title Description
0001 Granted