FR2864271B1 - Circuit de pompe a charge a rendement eleve, a faible cout - Google Patents
Circuit de pompe a charge a rendement eleve, a faible coutInfo
- Publication number
- FR2864271B1 FR2864271B1 FR0315119A FR0315119A FR2864271B1 FR 2864271 B1 FR2864271 B1 FR 2864271B1 FR 0315119 A FR0315119 A FR 0315119A FR 0315119 A FR0315119 A FR 0315119A FR 2864271 B1 FR2864271 B1 FR 2864271B1
- Authority
- FR
- France
- Prior art keywords
- low cost
- high efficiency
- pump circuit
- load pump
- cost load
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
- H02M3/073—Charge pumps of the Schenkel-type
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0315119A FR2864271B1 (fr) | 2003-12-19 | 2003-12-19 | Circuit de pompe a charge a rendement eleve, a faible cout |
US10/810,033 US7046076B2 (en) | 2003-12-19 | 2004-03-26 | High efficiency, low cost, charge pump circuit |
PCT/US2004/041287 WO2005065138A2 (fr) | 2003-12-19 | 2004-12-09 | Circuit de pompe de charge de rendement eleve et de faible cout |
EP04813593A EP1697807A2 (fr) | 2003-12-19 | 2004-12-09 | Circuit de pompe de charge de rendement eleve et de faible cout |
CNA2004800416740A CN1914574A (zh) | 2003-12-19 | 2004-12-09 | 高效率和低成本的电荷泵电路 |
TW093138847A TW200524257A (en) | 2003-12-19 | 2004-12-15 | High efficiency, low cost, charge pump circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0315119A FR2864271B1 (fr) | 2003-12-19 | 2003-12-19 | Circuit de pompe a charge a rendement eleve, a faible cout |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2864271A1 FR2864271A1 (fr) | 2005-06-24 |
FR2864271B1 true FR2864271B1 (fr) | 2006-03-03 |
Family
ID=34630420
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0315119A Expired - Fee Related FR2864271B1 (fr) | 2003-12-19 | 2003-12-19 | Circuit de pompe a charge a rendement eleve, a faible cout |
Country Status (6)
Country | Link |
---|---|
US (1) | US7046076B2 (fr) |
EP (1) | EP1697807A2 (fr) |
CN (1) | CN1914574A (fr) |
FR (1) | FR2864271B1 (fr) |
TW (1) | TW200524257A (fr) |
WO (1) | WO2005065138A2 (fr) |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4557577B2 (ja) * | 2004-03-26 | 2010-10-06 | 三洋電機株式会社 | チャージポンプ回路 |
EP1747559B1 (fr) * | 2004-04-01 | 2008-12-31 | Atmel Corporation | Procede et appareil pour la distribution d'une double alimentation electrique a une memoire non volatile integree |
US8035148B2 (en) * | 2005-05-17 | 2011-10-11 | Analog Devices, Inc. | Micromachined transducer integrated with a charge pump |
FR2886783B1 (fr) * | 2005-06-03 | 2008-02-01 | Atmel Corp | Pompe a charge bi-directionnelle a haut rendement |
DE102005033003A1 (de) * | 2005-07-14 | 2007-01-25 | Infineon Technologies Ag | Integrierte Schaltungsanordnung zur Potenzialerhöhung |
US7855591B2 (en) | 2006-06-07 | 2010-12-21 | Atmel Corporation | Method and system for providing a charge pump very low voltage applications |
US7652522B2 (en) * | 2006-09-05 | 2010-01-26 | Atmel Corporation | High efficiency low cost bi-directional charge pump circuit for very low voltage applications |
US7466188B2 (en) * | 2006-12-21 | 2008-12-16 | International Business Machines Corporation | Stress control mechanism for use in high-voltage applications in an integrated circuit |
US7446596B1 (en) | 2007-05-25 | 2008-11-04 | Atmel Corporation | Low voltage charge pump |
US7683699B2 (en) * | 2007-09-14 | 2010-03-23 | Atmel Corporation | Charge pump |
US7795951B2 (en) | 2007-11-30 | 2010-09-14 | Freescale Semiconductor, Inc. | High-dynamic range low ripple voltage multiplier |
US7737766B2 (en) * | 2008-02-15 | 2010-06-15 | International Business Machines Corporation | Two stage voltage boost circuit, IC and design structure |
US7733161B2 (en) * | 2008-02-15 | 2010-06-08 | International Business Machines Corporation | Voltage boost system, IC and design structure |
US7710195B2 (en) * | 2008-02-15 | 2010-05-04 | International Business Machines Corporation | Two stage voltage boost circuit with precharge circuit preventing leakage, IC and design structure |
US8054694B2 (en) * | 2009-03-24 | 2011-11-08 | Atmel Corporation | Voltage generator for memory array |
US8154333B2 (en) * | 2009-04-01 | 2012-04-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Charge pump circuits, systems, and operational methods thereof |
EP2427825A1 (fr) | 2009-05-07 | 2012-03-14 | Rambus Inc. | Signalisation asymétrique comparée à une tension d'alimentation électrique, configurable et dotée d'une protection contre les décharges électrostatiques |
EP2424092B1 (fr) * | 2010-08-27 | 2016-10-12 | Nxp B.V. | Pompe à charge haute efficacité |
CN102122949B (zh) * | 2011-03-10 | 2016-07-13 | 上海华虹宏力半导体制造有限公司 | 一种闪存电路 |
CN103312162B (zh) * | 2012-03-08 | 2016-01-13 | 扬州稻源微电子有限公司 | 倍压电路以及包括其的射频识别标签芯片 |
TWI492509B (zh) * | 2013-09-17 | 2015-07-11 | Himax Tech Ltd | 半電壓比電荷泵電路 |
EP2860865A1 (fr) | 2013-10-11 | 2015-04-15 | Dialog Semiconductor GmbH | Circuit de pompe de charge à haute efficacité |
US9917507B2 (en) | 2015-05-28 | 2018-03-13 | Sandisk Technologies Llc | Dynamic clock period modulation scheme for variable charge pump load currents |
US9647536B2 (en) | 2015-07-28 | 2017-05-09 | Sandisk Technologies Llc | High voltage generation using low voltage devices |
US9520776B1 (en) | 2015-09-18 | 2016-12-13 | Sandisk Technologies Llc | Selective body bias for charge pump transfer switches |
CN106208678B (zh) * | 2016-07-14 | 2019-05-31 | 合肥格易集成电路有限公司 | 一种电荷泵及存储器 |
US10290329B2 (en) | 2016-07-14 | 2019-05-14 | Ememory Technology Inc. | Charge pump apparatus |
CN106655726B (zh) * | 2016-11-30 | 2019-04-19 | 上海集成电路研发中心有限公司 | 一种全mos管电荷泵电路结构 |
TWI602386B (zh) * | 2016-12-14 | 2017-10-11 | 矽統科技股份有限公司 | 電荷泵浦電路 |
CN107181403A (zh) * | 2017-05-31 | 2017-09-19 | 成都锐成芯微科技股份有限公司 | 差分电荷泵电路 |
US10250133B2 (en) * | 2017-07-18 | 2019-04-02 | Stmicroelectronics International N.V. | Single-stage CMOS-based voltage quadrupler circuit |
US10672453B2 (en) * | 2017-12-22 | 2020-06-02 | Nanya Technology Corporation | Voltage system providing pump voltage for memory device and method for operating the same |
US10461635B1 (en) | 2018-05-15 | 2019-10-29 | Analog Devices Global Unlimited Company | Low VIN high efficiency chargepump |
US10587190B1 (en) * | 2018-11-08 | 2020-03-10 | Semiconductor Components Industries, Llc | Charge pump with individualized switching control |
JP6783879B2 (ja) * | 2019-01-29 | 2020-11-11 | ウィンボンド エレクトロニクス コーポレーション | チャージポンプ回路 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4581546A (en) * | 1983-11-02 | 1986-04-08 | Inmos Corporation | CMOS substrate bias generator having only P channel transistors in the charge pump |
KR930008876B1 (ko) * | 1990-08-17 | 1993-09-16 | 현대전자산업 주식회사 | 반도체소자의 고전압 발생회로 |
US5352936A (en) * | 1993-06-07 | 1994-10-04 | Intel Corporation | High voltage tolerant voltage pump constructed for a low voltage CMOS process |
DE4324855C1 (de) * | 1993-07-23 | 1994-09-22 | Siemens Ag | Ladungspumpe |
US7102422B1 (en) * | 1994-04-20 | 2006-09-05 | Nippon Steel Corporation | Semiconductor booster circuit having cascaded MOS transistors |
EP0696839B1 (fr) * | 1994-08-12 | 1998-02-25 | Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno | Elévateur de tension du type à pompage de charge |
US5889428A (en) * | 1995-06-06 | 1999-03-30 | Ramtron International Corporation | Low loss, regulated charge pump with integrated ferroelectric capacitors |
US5818289A (en) * | 1996-07-18 | 1998-10-06 | Micron Technology, Inc. | Clocking scheme and charge transfer switch for increasing the efficiency of a charge pump or other circuit |
US6130574A (en) * | 1997-01-24 | 2000-10-10 | Siemens Aktiengesellschaft | Circuit configuration for producing negative voltages, charge pump having at least two circuit configurations and method of operating a charge pump |
US6448841B1 (en) * | 1998-05-01 | 2002-09-10 | Texas Instruments Incorporated | Efficiency charge pump circuit |
IT1301936B1 (it) * | 1998-08-27 | 2000-07-07 | St Microelectronics Srl | Circuito a pompa di carica per dispositivi integrati di memoria |
US6166585A (en) * | 1998-08-31 | 2000-12-26 | Conexant Systems, Inc. | Methods and apparatus for a high efficiency charge pump that includes a MOSFET capacitor operating in an accumulation region |
US6353356B1 (en) * | 1999-08-30 | 2002-03-05 | Micron Technology, Inc. | High voltage charge pump circuits |
DE19953882C2 (de) * | 1999-11-09 | 2001-10-18 | Infineon Technologies Ag | Ladungspumpe zum Erzeugen von hohen Spannungen für Halbleiterschaltungen |
US6429723B1 (en) * | 1999-11-18 | 2002-08-06 | Texas Instruments Incorporated | Integrated circuit with charge pump and method |
TW494631B (en) * | 2000-01-26 | 2002-07-11 | Sanyo Electric Co | Charge pump circuit |
TW578378B (en) * | 2000-05-30 | 2004-03-01 | Sanyo Electric Co | Charge pump and method for controlling the same |
JP4040467B2 (ja) * | 2001-02-01 | 2008-01-30 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | プログラマブルチャージポンプ装置 |
US6661682B2 (en) * | 2001-02-16 | 2003-12-09 | Imec (Interuniversitair Microelectronica Centrum) | High voltage generating charge pump circuit |
US6466079B1 (en) * | 2001-06-21 | 2002-10-15 | Tower Semiconductor Ltd. | High voltage charge pump for providing output voltage close to maximum high voltage of a CMOS device |
KR100404001B1 (ko) * | 2001-12-29 | 2003-11-05 | 주식회사 하이닉스반도체 | 차지 펌프 회로 |
TW583818B (en) * | 2002-12-03 | 2004-04-11 | Via Tech Inc | Charge pump and voltage doubler using the same |
-
2003
- 2003-12-19 FR FR0315119A patent/FR2864271B1/fr not_active Expired - Fee Related
-
2004
- 2004-03-26 US US10/810,033 patent/US7046076B2/en not_active Expired - Lifetime
- 2004-12-09 EP EP04813593A patent/EP1697807A2/fr not_active Withdrawn
- 2004-12-09 WO PCT/US2004/041287 patent/WO2005065138A2/fr not_active Application Discontinuation
- 2004-12-09 CN CNA2004800416740A patent/CN1914574A/zh active Pending
- 2004-12-15 TW TW093138847A patent/TW200524257A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
US20050212586A1 (en) | 2005-09-29 |
EP1697807A2 (fr) | 2006-09-06 |
FR2864271A1 (fr) | 2005-06-24 |
US7046076B2 (en) | 2006-05-16 |
TW200524257A (en) | 2005-07-16 |
WO2005065138A3 (fr) | 2005-09-09 |
CN1914574A (zh) | 2007-02-14 |
WO2005065138A2 (fr) | 2005-07-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20120831 |