FR2886783B1 - Pompe a charge bi-directionnelle a haut rendement - Google Patents

Pompe a charge bi-directionnelle a haut rendement

Info

Publication number
FR2886783B1
FR2886783B1 FR0505652A FR0505652A FR2886783B1 FR 2886783 B1 FR2886783 B1 FR 2886783B1 FR 0505652 A FR0505652 A FR 0505652A FR 0505652 A FR0505652 A FR 0505652A FR 2886783 B1 FR2886783 B1 FR 2886783B1
Authority
FR
France
Prior art keywords
high performance
load pump
directional load
directional
pump
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0505652A
Other languages
English (en)
Other versions
FR2886783A1 (fr
Inventor
Jean Michel Daga
Emmanuel Racape
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Atmel Corp
Original Assignee
Atmel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Atmel Corp filed Critical Atmel Corp
Priority to FR0505652A priority Critical patent/FR2886783B1/fr
Priority to US11/221,309 priority patent/US20060273843A1/en
Priority to PCT/US2006/018299 priority patent/WO2006132757A2/fr
Priority to TW095118757A priority patent/TW200705784A/zh
Publication of FR2886783A1 publication Critical patent/FR2886783A1/fr
Priority to US11/927,298 priority patent/US20080042731A1/en
Application granted granted Critical
Publication of FR2886783B1 publication Critical patent/FR2886783B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H02M3/073—Charge pumps of the Schenkel-type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)
FR0505652A 2005-06-03 2005-06-03 Pompe a charge bi-directionnelle a haut rendement Expired - Fee Related FR2886783B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR0505652A FR2886783B1 (fr) 2005-06-03 2005-06-03 Pompe a charge bi-directionnelle a haut rendement
US11/221,309 US20060273843A1 (en) 2005-06-03 2005-09-07 High efficiency bi-directional charge pump circuit
PCT/US2006/018299 WO2006132757A2 (fr) 2005-06-03 2006-05-10 Circuit de pompe a charge bidirectionnelle tres efficace
TW095118757A TW200705784A (en) 2005-06-03 2006-05-26 Charge pump circuit and method of operating the same
US11/927,298 US20080042731A1 (en) 2005-06-03 2007-10-29 High efficiency bi-directional charge pump circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0505652A FR2886783B1 (fr) 2005-06-03 2005-06-03 Pompe a charge bi-directionnelle a haut rendement

Publications (2)

Publication Number Publication Date
FR2886783A1 FR2886783A1 (fr) 2006-12-08
FR2886783B1 true FR2886783B1 (fr) 2008-02-01

Family

ID=35515644

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0505652A Expired - Fee Related FR2886783B1 (fr) 2005-06-03 2005-06-03 Pompe a charge bi-directionnelle a haut rendement

Country Status (3)

Country Link
US (1) US20060273843A1 (fr)
FR (1) FR2886783B1 (fr)
TW (1) TW200705784A (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006132757A2 (fr) * 2005-06-03 2006-12-14 Atmel Corporation Circuit de pompe a charge bidirectionnelle tres efficace
US7855591B2 (en) * 2006-06-07 2010-12-21 Atmel Corporation Method and system for providing a charge pump very low voltage applications
US7683699B2 (en) * 2007-09-14 2010-03-23 Atmel Corporation Charge pump
US8040175B2 (en) * 2007-10-24 2011-10-18 Cypress Semiconductor Corporation Supply regulated charge pump system
US8154333B2 (en) * 2009-04-01 2012-04-10 Taiwan Semiconductor Manufacturing Company, Ltd. Charge pump circuits, systems, and operational methods thereof
TWI423572B (zh) * 2010-02-03 2014-01-11 Univ Nat Chiao Tung 高速升壓之充電泵電路
US8427229B2 (en) * 2011-03-02 2013-04-23 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuits with bi-directional charge pumps
US9379103B2 (en) * 2012-10-17 2016-06-28 Semtech Corporation Semiconductor device and method of preventing latch-up in a charge pump circuit
US10312791B1 (en) * 2018-07-02 2019-06-04 National Chiao Tung University Negative high-voltage generation device with multi-stage selection
US10826389B1 (en) 2019-05-28 2020-11-03 Samsung Electronics Co., Ltd. Charge pump device and image sensor including the same
CN113110684B (zh) * 2021-03-30 2022-05-17 东方微电科技(武汉)有限公司 用于磁传感的电源电压输出集成电路

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69408665T2 (de) * 1994-08-12 1998-10-15 Cons Ric Microelettronica Spannungserhöher vom Ladungspumpentype
JP3167904B2 (ja) * 1994-12-27 2001-05-21 日本鋼管株式会社 電圧昇圧回路
JPH09198887A (ja) * 1996-01-12 1997-07-31 Nec Corp 高電圧発生回路
US6100557A (en) * 1996-10-10 2000-08-08 Macronix International Co., Ltd. Triple well charge pump
US6130574A (en) * 1997-01-24 2000-10-10 Siemens Aktiengesellschaft Circuit configuration for producing negative voltages, charge pump having at least two circuit configurations and method of operating a charge pump
JP3403006B2 (ja) * 1997-06-24 2003-05-06 株式会社東芝 半導体集積回路装置
KR100280434B1 (ko) * 1998-01-23 2001-03-02 김영환 고전압발생회로
JP3385960B2 (ja) * 1998-03-16 2003-03-10 日本電気株式会社 負電圧チャージポンプ回路
US6285240B1 (en) * 1999-01-14 2001-09-04 Macronix International Co., Ltd. Low threshold MOS two phase negative charge pump
US6573780B2 (en) * 1999-02-02 2003-06-03 Macronix International Co., Ltd. Four-phase charge pump with lower peak current
JP4242006B2 (ja) * 1999-06-23 2009-03-18 株式会社ルネサステクノロジ チャージポンプ回路およびそれを用いた不揮発性半導体記憶装置
US6292048B1 (en) * 1999-11-11 2001-09-18 Intel Corporation Gate enhancement charge pump for low voltage power supply
IT1319841B1 (it) * 2000-02-15 2003-11-03 St Microelectronics Srl Dispositivo survoltore bidirezionale ad elevata efficienza.
US6664846B1 (en) * 2000-08-30 2003-12-16 Altera Corporation Cross coupled N-channel negative pump
US6696883B1 (en) * 2000-09-20 2004-02-24 Cypress Semiconductor Corp. Negative bias charge pump
US6452438B1 (en) * 2000-12-28 2002-09-17 Intel Corporation Triple well no body effect negative charge pump
US6677805B2 (en) * 2001-04-05 2004-01-13 Saifun Semiconductors Ltd. Charge pump stage with body effect minimization
US6418040B1 (en) * 2001-04-09 2002-07-09 Cypress Semiconductor Corp. Bi-directional architecture for a high-voltage cross-coupled charge pump
US6720822B2 (en) * 2001-10-31 2004-04-13 Stmicroelectronics S.R.L. Negative charge pump architecture with self-generated boosted phases
KR100404001B1 (ko) * 2001-12-29 2003-11-05 주식회사 하이닉스반도체 차지 펌프 회로
US6515903B1 (en) * 2002-01-16 2003-02-04 Advanced Micro Devices, Inc. Negative pump regulator using MOS capacitor
ITTO20020158A1 (it) * 2002-02-25 2003-08-25 St Microelectronics Srl Pompa di carica per tensioni negative.
US6674317B1 (en) * 2002-09-18 2004-01-06 Taiwan Semiconductor Manufacturing Company Output stage of a charge pump circuit providing relatively stable output voltage without voltage degradation
ITTO20020821A1 (it) * 2002-09-20 2004-03-21 Atmel Corp Pompa di carica negativa con polarizzazione di massa.
FR2864271B1 (fr) * 2003-12-19 2006-03-03 Atmel Corp Circuit de pompe a charge a rendement eleve, a faible cout
US6952129B2 (en) * 2004-01-12 2005-10-04 Ememory Technology Inc. Four-phase dual pumping circuit
FR2864272B1 (fr) * 2004-04-30 2006-05-26 Atmel Corp Circuit de pompe a charge a rendement elevee, a faible cout

Also Published As

Publication number Publication date
FR2886783A1 (fr) 2006-12-08
TW200705784A (en) 2007-02-01
US20060273843A1 (en) 2006-12-07

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20130228