JPS57157315A - Intermediate voltage generating circuit - Google Patents

Intermediate voltage generating circuit

Info

Publication number
JPS57157315A
JPS57157315A JP56042962A JP4296281A JPS57157315A JP S57157315 A JPS57157315 A JP S57157315A JP 56042962 A JP56042962 A JP 56042962A JP 4296281 A JP4296281 A JP 4296281A JP S57157315 A JPS57157315 A JP S57157315A
Authority
JP
Japan
Prior art keywords
voltage
trs
mos trs
current
type mos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56042962A
Other languages
Japanese (ja)
Inventor
Tadahide Takada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56042962A priority Critical patent/JPS57157315A/en
Publication of JPS57157315A publication Critical patent/JPS57157315A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Dram (AREA)
  • Control Of Electrical Variables (AREA)

Abstract

PURPOSE:To achieve supply of a large current to the fluctuation of an output voltage with less stationary current, by using N and P type MOS TRs with source follower operation and operating them at a subthreshold region. CONSTITUTION:The circuit consists of N type MOS TRs Q1,3,5,7 and 8 and P type MOS TRs Q 2,4 and 6. For the circuit operation, VDD=5V and GND=0 V and W/L-1 for N or P type MOS TRs are adopted. Since the W/L of the MOS TRs Q7 and Q8 is equal, the voltage at a terminal N4 is almost fixed. Since the W/L of the MOS TRs Q5 and Q3 is 10<-4>, the MOS TRQ3 is operated at a subthreshold region. This is the same for the MOS TRQ4. When a current flowing from an output terminal N1 is zero, a voltage VN1 at a terminal N1 is a voltage in which a saturation current IQ1 of the Q1 is coincident with the saturation current IQ2 of the Q2, thus the voltage is almost an average value between voltages VN2 and VN3. Thus, the Q1 and Q2 are operated at the subthreshold region.
JP56042962A 1981-03-24 1981-03-24 Intermediate voltage generating circuit Pending JPS57157315A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56042962A JPS57157315A (en) 1981-03-24 1981-03-24 Intermediate voltage generating circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56042962A JPS57157315A (en) 1981-03-24 1981-03-24 Intermediate voltage generating circuit

Publications (1)

Publication Number Publication Date
JPS57157315A true JPS57157315A (en) 1982-09-28

Family

ID=12650651

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56042962A Pending JPS57157315A (en) 1981-03-24 1981-03-24 Intermediate voltage generating circuit

Country Status (1)

Country Link
JP (1) JPS57157315A (en)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61217815A (en) * 1985-03-04 1986-09-27 アドバンスト・マイクロ・デイバイシズ・インコーポレーテツド Low power/low output impedance on-chip voltage reference generator
EP0205104A2 (en) * 1985-06-10 1986-12-17 Kabushiki Kaisha Toshiba Intermediate potential generation circuit
JPS62119613A (en) * 1985-11-20 1987-05-30 Mitsubishi Electric Corp Internal power supply voltage generating circuit for semiconductor integrated circuit
JPS6312010A (en) * 1985-06-10 1988-01-19 Toshiba Corp Intermediate electric potential generating circuit
JPS63174115A (en) * 1987-01-14 1988-07-18 Toshiba Corp Intermediate potential generating circuit
JPS6461808A (en) * 1987-09-01 1989-03-08 Nec Corp Reference voltage circuit
EP0317222A2 (en) * 1987-11-13 1989-05-24 General Electric Company Voltage divider circuits
JPH01131912A (en) * 1988-10-13 1989-05-24 Mitsubishi Electric Corp Constant voltage generation circuit
JPH01269111A (en) * 1988-04-20 1989-10-26 Matsushita Electric Ind Co Ltd Reference voltage generating circuit
JPH0246588A (en) * 1988-08-07 1990-02-15 Nec Ic Microcomput Syst Ltd Intermediate level generating circuit
US4906914A (en) * 1987-12-18 1990-03-06 Kabushiki Kaisha Toshiba Intermediate potential generation circuit for generating a potential intermediate between a power source potential and ground potential
JPH02199518A (en) * 1989-01-27 1990-08-07 Nec Corp Reference voltage generating circuit
US5717324A (en) * 1995-12-11 1998-02-10 Mitsubishi Denki Kabushiki Kaisha Intermediate potential generation circuit
US5757225A (en) * 1995-09-04 1998-05-26 Mitsubishi Denki Kabushiki Kaisha Voltage generation circuit that can stably generate intermediate potential independent of threshold voltage
CN108227809A (en) * 2018-01-09 2018-06-29 电子科技大学 A kind of high PSRR reference circuit based on subthreshold region MOS partial pressures

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61217815A (en) * 1985-03-04 1986-09-27 アドバンスト・マイクロ・デイバイシズ・インコーポレーテツド Low power/low output impedance on-chip voltage reference generator
EP0205104A2 (en) * 1985-06-10 1986-12-17 Kabushiki Kaisha Toshiba Intermediate potential generation circuit
JPS6312010A (en) * 1985-06-10 1988-01-19 Toshiba Corp Intermediate electric potential generating circuit
JPS62119613A (en) * 1985-11-20 1987-05-30 Mitsubishi Electric Corp Internal power supply voltage generating circuit for semiconductor integrated circuit
JPS63174115A (en) * 1987-01-14 1988-07-18 Toshiba Corp Intermediate potential generating circuit
JPS6461808A (en) * 1987-09-01 1989-03-08 Nec Corp Reference voltage circuit
EP0317222A2 (en) * 1987-11-13 1989-05-24 General Electric Company Voltage divider circuits
US4906914A (en) * 1987-12-18 1990-03-06 Kabushiki Kaisha Toshiba Intermediate potential generation circuit for generating a potential intermediate between a power source potential and ground potential
JPH01269111A (en) * 1988-04-20 1989-10-26 Matsushita Electric Ind Co Ltd Reference voltage generating circuit
JPH0246588A (en) * 1988-08-07 1990-02-15 Nec Ic Microcomput Syst Ltd Intermediate level generating circuit
JPH01131912A (en) * 1988-10-13 1989-05-24 Mitsubishi Electric Corp Constant voltage generation circuit
JPH02199518A (en) * 1989-01-27 1990-08-07 Nec Corp Reference voltage generating circuit
US5757225A (en) * 1995-09-04 1998-05-26 Mitsubishi Denki Kabushiki Kaisha Voltage generation circuit that can stably generate intermediate potential independent of threshold voltage
US5717324A (en) * 1995-12-11 1998-02-10 Mitsubishi Denki Kabushiki Kaisha Intermediate potential generation circuit
US5726941A (en) * 1995-12-11 1998-03-10 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit
US5812015A (en) * 1995-12-11 1998-09-22 Mitsubishi Denki Kabushiki Kaisha Boosting pulse generation circuit for a semiconductor integrated circuit
US5815446A (en) * 1995-12-11 1998-09-29 Mitsubishi Denki Kabushiki Kaisha Potential generation circuit
CN108227809A (en) * 2018-01-09 2018-06-29 电子科技大学 A kind of high PSRR reference circuit based on subthreshold region MOS partial pressures
CN108227809B (en) * 2018-01-09 2019-08-23 电子科技大学 A kind of high PSRR reference circuit based on subthreshold region MOS partial pressure

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