JP6663810B2 - パワー半導体装置及びそれを用いた電力変換装置 - Google Patents
パワー半導体装置及びそれを用いた電力変換装置 Download PDFInfo
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- JP6663810B2 JP6663810B2 JP2016138115A JP2016138115A JP6663810B2 JP 6663810 B2 JP6663810 B2 JP 6663810B2 JP 2016138115 A JP2016138115 A JP 2016138115A JP 2016138115 A JP2016138115 A JP 2016138115A JP 6663810 B2 JP6663810 B2 JP 6663810B2
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- power semiconductor
- conductor plate
- semiconductor element
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Description
Claims (15)
- 表面及び裏面のそれぞれに電極が形成された第1のパワー半導体素子と、
表面及び裏面のそれぞれに電極が形成された第2のパワー半導体素子と、
前記第1のパワー半導体素子の表面側に配置される第1の導体板と、
前記第1のパワー半導体素子の裏面側に配置される第2の導体板と、
前記第2のパワー半導体素子の表面側に配置される第3の導体板と、
前記第2のパワー半導体素子の裏面側に配置される第4の導体板と、を備えたパワー半導体装置において、
前記第2の導体板には、前記第3の導体板に向かって延設された接続部が当該第2の導体板と一体構造として設けられ、
前記接続部は、前記第2の導体板から前記第3の導体板に向かって屈曲する屈曲部を有するとともに、前記屈曲部より先端側において前記第3の導体板と接続され、
前記第1のパワー半導体素子、前記第2のパワー半導体素子、前記第1の導体板、前記第2の導体板、前記第3の導体板、及び前記第4の導体板は、トランスファーモールドによって一体的に樹脂封止されているパワー半導体装置。 - 請求項1に記載のパワー半導体装置であって、
前記第1のパワー半導体素子は、金属接合材を介して前記第2の導体板に接続され、
前記第2の導体板は、前記第1のパワー半導体素子が接続される領域における当該第2の導体板の厚さよりも前記接続部の厚さの方が小さくなるように、形成されるパワー半導体装置。 - 請求項1又は2に記載のパワー半導体装置であって、
前記第1の導体板、前記第2の導体板、前記第3の導体板、及び前記第4の導体板を固定する封止部を備え、
前記第2の導体板は、前記第1のパワー半導体素子が配置される側の面とは反対側の面が前記封止部から露出し、
前記第4の導体板は、前記第2のパワー半導体素子が配置される側の面とは反対側の面が前記封止部から露出するパワー半導体装置。 - 請求項3に記載のパワー半導体装置であって、
前記第2の導体板の露出面と前記第4の導体板の露出面とは、同一面上に配置されるパワー半導体装置。 - 請求項3又は4に記載のパワー半導体装置であって、
前記第1の導体板は、前記第1のパワー半導体素子が配置される側の面とは反対側の面が前記封止部から露出し、
前記第3の導体板は、前記第2のパワー半導体素子が配置される側の面とは反対側の面が前記封止部から露出するパワー半導体装置。 - 請求項5に記載のパワー半導体装置であって、
前記第1の導体板の露出面と前記第3の導体板の露出面とは、同一面上に配置されるパワー半導体装置。 - 請求項5又は6に記載のパワー半導体装置であって、
前記第1のパワー半導体素子は、前記第1の導体板の露出面と前記第2の導体板の露出面との間に挟まれる空間に配置され、
前記第2のパワー半導体素子は、前記第3の導体板の露出面と前記第4の導体板の露出面との間に挟まれる空間に配置されるパワー半導体装置。 - 請求項3乃至7のいずれかに記載のパワー半導体装置であって、
前記接続部は、前記第2の導体板の露出部と前記第4の導体板の露出部との間の領域において、前記封止部の内部に埋設されるパワー半導体装置。 - 請求項1乃至8のいずれかに記載のパワー半導体装置であって、
前記接続部は、前記第1のパワー半導体素子と前記第2のパワー半導体素子とに挟まれる空間に配置されるパワー半導体装置。 - 請求項1乃至9のいずれかに記載のパワー半導体装置であって、
前記第3の導体板には、当該第3の導体板の厚さ方向に屈曲することなく前記第1の導体板に向かって突出する突出部が当該第3の導体板と一体構造として設けられ、当該突出部が前記第2の導体板の前記接続部と接続されているパワー半導体装置。 - 請求項1乃至10のいずれかに記載のパワー半導体装置であって、
絶縁部材を挟んで前記第2の導体板及び前記第4の導体板と対向する位置に第1の放熱部材が配置されるパワー半導体装置。 - 請求項11に記載のパワー半導体装置であって、
絶縁部材を挟んで前記第1の導体板及び前記第3の導体板と対向する位置に第2の放熱部材が配置され、
前記第1の放熱部材および前記第2の放熱部材は、前記パワー半導体装置に向かって加圧されるパワー半導体装置。 - 請求項11又は12に記載のパワー半導体装置と、
前記第1の放熱部材の外面に冷媒を流すための流路を形成する流路形成体と、を備えた電力変換装置。 - 表面及び裏面のそれぞれに電極が形成された第1のパワー半導体素子と、
表面及び裏面のそれぞれに電極が形成された第2のパワー半導体素子と、
前記第1のパワー半導体素子の表面側に配置される第1の導体板と、
前記第1のパワー半導体素子の裏面側に配置される第2の導体板と、
前記第2のパワー半導体素子の表面側に配置される第3の導体板と、
前記第2のパワー半導体素子の裏面側に配置される第4の導体板と、を備えたパワー半導体装置の製造方法であって、
前記第2の導体板の厚さ方向に屈曲する屈曲部を当該第2の導体板と一体に形成する工程と、
前記第1のパワー半導体素子を前記第1の導体板と前記第2の導体板に金属接合材を介して接続する工程と、
前記第2のパワー半導体素子を前記第3の導体板と前記第4の導体板に金属接合材を介して接続する工程と、
前記第2の導体板の前記屈曲部の先端と前記第3の導体板とを金属接合材を介して接続する工程と、
前記第1のパワー半導体素子、前記第2のパワー半導体素子、前記第1の導体板、前記第2の導体板、前記第3の導体板、及び前記第4の導体板を含む部分を金型内に配置してトランスファーモールドにより封止する工程と、を含むパワー半導体装置の製造方法。 - 請求項14に記載のパワー半導体装置の製造方法において、
前記第1の導体板及び前記第3の導体板と一体的に接続されたタイバーを切断する工程を含むパワー半導体装置の製造方法。
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US11432419B2 (en) | 2022-08-30 |
JP6818785B2 (ja) | 2021-01-20 |
JP2019071784A (ja) | 2019-05-09 |
EP3562020B1 (en) | 2022-04-20 |
JP6818785B6 (ja) | 2021-03-17 |
CN102332831B (zh) | 2014-08-20 |
JP2012005322A (ja) | 2012-01-05 |
JP5744999B2 (ja) | 2015-07-08 |
JP2021052587A (ja) | 2021-04-01 |
JP5380376B2 (ja) | 2014-01-08 |
US20110310585A1 (en) | 2011-12-22 |
EP2416483B1 (en) | 2019-08-07 |
US10034401B2 (en) | 2018-07-24 |
US20200068735A1 (en) | 2020-02-27 |
EP3562020A1 (en) | 2019-10-30 |
EP2416483A3 (en) | 2017-06-28 |
JP2016182037A (ja) | 2016-10-13 |
US10512181B2 (en) | 2019-12-17 |
US20180303001A1 (en) | 2018-10-18 |
JP7012813B2 (ja) | 2022-01-28 |
US9179581B2 (en) | 2015-11-03 |
EP2416483A2 (en) | 2012-02-08 |
CN102332831A (zh) | 2012-01-25 |
JP2014027877A (ja) | 2014-02-06 |
JP5973026B2 (ja) | 2016-08-17 |
JP2015156800A (ja) | 2015-08-27 |
US20160007492A1 (en) | 2016-01-07 |
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