JP4603956B2 - 電力変換装置 - Google Patents
電力変換装置 Download PDFInfo
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- JP4603956B2 JP4603956B2 JP2005245232A JP2005245232A JP4603956B2 JP 4603956 B2 JP4603956 B2 JP 4603956B2 JP 2005245232 A JP2005245232 A JP 2005245232A JP 2005245232 A JP2005245232 A JP 2005245232A JP 4603956 B2 JP4603956 B2 JP 4603956B2
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Description
21,図22を用いて説明する。
IGBT2がスイッチング動作を行うことにより、負荷と負荷接続ケーブルのインダクタンス22へ電圧を加えるように制御される。
31a〜31gは、各IGBT間、または、各還流用ダイオード間を接続する出力用導体で生じるインダクタンスである。出力用導体は、往復電流が流れ、インダクタンスが生じない構造であるが、絶縁物の厚み分の距離が離れているため、漏れインダクタンスが生じる。この値は、絶縁基板上のIGBTが均等に配置されているため、ほぼ同じ値になる。このインダクタンスの値を仮にLoとする。主回路インダクタンスのうち、半導体装置
29内のインダクタンスを考えると、4つのIGBT1a〜1d、4つのIGBT2a〜2dのどのペアで電流が流れるかにより、インダクタンスは異なる。
(IGBT2)を各々4つ用いた場合の半導体装置29の斜視図(図9),上面図(図
10),高電位側(正極電位側)の断面図(図11)、及び、低電位側(負極電位側)の断面図(図12)である。
(IGBT2)の一辺に並んで配置されている。第1半導体素子群(IGBT1)と第3半導体素子群(IGBT1)は、積層構造体を介して対向して配置されている。また、第2半導体素子群(IGBT2)と第4半導体素子群(IGBT2)も、積層構造体を介して対向して配置されている。
(IGBT2)と第3半導体素子群(IGBT1)をそれぞれ積層構造体を介し、対向して配置するものであってもよい。
5aで負極側端子7aを挟むように1列に配置した点である。正極側端子5aと負極側端子7aは、絶縁距離をとる必要があるため、これらを接近させることができない。しかし、インダクタンスをより小さくするには、これらをできるだけ近づけることにより、主回路の電流経路が作るループ面積をより小さくすることが必要となる。
7a)の距離がより均一になる。このため、これらの間のインダクタンスが等しくなることで、さらなる低インダクタンス化を実現させることができる。
(第2方向)において、複数のコンデンサ17が第1方向に一列に並んで配置されている。
32を介して、コンデンサ17の正極端子と負極端子に接続されている。積層平板導体
32は、3個の半導体装置29を覆うように、半導体装置29の上面に配置されている。積層平板導体32は、半導体装置29の正極側端子5aとコンデンサ17の正極端子との間を電気的に接続した正極側平板導体と、半導体装置29の負極側端子5aとコンデンサ17の負極端子との間を電気的に接続した負極側平板導体とを、絶縁体を介して積層することにより構成されている。
Claims (6)
- 複数のパワースイッチング素子により構成されるインバータ回路部を有するパワー半導体装置と、前記パワー半導体装置に供給される直流電流を平滑化するコンデンサと、を備え、前記複数のパワースイッチング素子の駆動により複数相の交流電流を出力する電力変換装置であって、
前記パワー半導体装置は、前記インバータ回路部に前記直流電流を伝達する正極側導体板と負極側導体板を有し、
前記インバータ回路部は、電気的に並列に接続された複数のパワースイッチング素子を有する上アーム回路部と、電気的に並列に接続された複数のパワースイッチング素子を有する下アーム回路部と、を有し、当該上アーム回路部及び当該下アーム回路部の駆動によって前記複数相の交流電流のうち1つの相の交流電流が出力され、
前記正極側導体板は、少なくとも一部が絶縁体を介して負極側導体板と積層状態となるように構成され、
前記上アーム回路部を構成する複数のパワースイッチング素子は、一方のパワースイッチング素子群と他方のパワースイッチング素子群に分けられ、
前記下アーム回路部を構成する複数のパワースイッチング素子は、前記一方のパワースイッチング素子群と前記他方のパワースイッチング素子群により挟まれる位置に配置され、
前記一方のパワースイッチング素子群と前記他方のパワースイッチング素子群と前記下アーム回路部を構成する複数のパワースイッチング素子は、前記正極側導体板及び前記負極側導体板に沿って、一列に並べられる電力変換装置。 - 請求項1に記載の電力変換装置であって、
前記一方のパワースイッチング素子群と前記他方のパワースイッチング素子群と前記下アーム回路部を構成する複数のパワースイッチング素子は、前記正極側導体板と前記負極側導体板が積層する方向に対して、一列に並べられる電力変換装置。 - 複数のパワースイッチング素子により構成されるインバータ回路部を有するパワー半導体装置と、前記パワー半導体装置に供給される直流電流を平滑化するコンデンサと、を備え、前記複数のパワースイッチング素子の駆動により複数相の交流電流を出力する電力変換装置であって、
前記パワー半導体装置は、前記インバータ回路部に前記直流電流を伝達する正極側導体板と負極側導体板を有し、
前記インバータ回路部は、電気的に並列に接続された複数のパワースイッチング素子を有する上アーム回路部と、電気的に並列に接続された複数のパワースイッチング素子を有する下アーム回路部と、を有し、当該上アーム回路部及び当該下アーム回路部の駆動により前記複数相の交流電流のうち1つの相の交流電流が出力され、
前記正極側導体板は、少なくとも一部が絶縁体を介して負極側導体板と積層状態となるように構成され、
前記上アーム回路部を構成する複数のパワースイッチング素子は、第1パワースイッチング素子と第2パワースイッチング素子に分けられ、
前記下アーム回路部を構成する複数のパワースイッチング素子は、第3パワースイッチング素子と第4パワースイッチング素子に分けられ、
前記第3パワースイッチング素子は、前記第1パワースイッチング素子と前記第2パワースイッチング素子の間に配置され、
前記第2パワースイッチング素子は、前記第3パワースイッチング素子と前記第4パワースイッチング素子の間に配置され、
さらに、前記第1パワースイッチング素子と前記第2パワースイッチング素子と前記第3パワースイッチング素子と前記第4パワースイッチング素子は、前記正極側導体板及び前記負極側導体板に沿って、一列に並べられる電力変換装置。 - 請求項3に記載の電力変換装置であって、
前記第1パワースイッチング素子と前記第2パワースイッチング素子と前記第3パワースイッチング素子と前記第4パワースイッチング素子は、前記正極側導体板と前記負極側導体板が積層する方向に対して、一列に並べられる電力変換装置。 - 複数のパワースイッチング素子により構成されるインバータ回路部を有するパワー半導体装置と、前記パワー半導体装置に供給される直流電流を平滑化するコンデンサと、を備え、前記複数のパワースイッチング素子の駆動により複数相の交流電流を出力する電力変換装置であって、
前記パワー半導体装置は、前記インバータ回路部に前記直流電流を伝達する正極側導体板と負極側導体板を有し、
前記インバータ回路部は、電気的に並列に接続された複数のパワースイッチング素子を有する上アーム回路部と、電気的に並列に接続された複数のパワースイッチング素子を有する下アーム回路部と、を有し、当該上アーム回路部及び当該下アーム回路部の駆動により前記複数相の交流電流のうち1つの相の交流電流が出力され、
前記正極側導体板は、少なくとも一部が絶縁体を介して負極側導体板と積層状態となるように構成され、
前記上アーム回路部を構成する複数のパワースイッチング素子は、第1のパワースイッチング素子群と第2のパワースイッチング素子群に分けられ、
前記下アーム回路部を構成する複数のパワースイッチング素子は、第3のパワースイッチング素子群と第4のパワースイッチング素子群に分けられ、
前記第1のパワースイッチング素子群及び前記第3のパワースイッチング素子群は、前記正極側導体板及び前記負極側導体板に対して一方側に配置され、
前記第2のパワースイッチング素子群及び前記第4のパワースイッチング素子群は、前記正極側導体板及び前記負極側導体板に対して他方側に配置される電力変換装置。 - 請求項5に記載の電力変換装置であって、
前記第1のパワースイッチング素子群及び前記第3のパワースイッチング素子群を構成するパワースイッチング素子は、前記正極側導体板及び前記負極側導体板に沿って、一列に並べられ、
前記第2のパワースイッチング素子群及び前記第4のパワースイッチング素子群を構成するパワースイッチング素子は、前記正極側導体板及び前記負極側導体板に沿って、一列に並べられる電力変換装置。
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US11/501,784 US7542317B2 (en) | 2005-08-26 | 2006-08-10 | Semiconductor device and power conversion apparatus using the same |
CNB2006101109986A CN100555624C (zh) | 2005-08-26 | 2006-08-11 | 半导体装置及使用该半导体装置的电力变换装置 |
EP06017139.4A EP1758440B1 (en) | 2005-08-26 | 2006-08-17 | Semiconductor device |
EP12178021.7A EP2568787B1 (en) | 2005-08-26 | 2006-08-17 | Semiconductor device and power conversion apparatus using the same |
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EP1758440A2 (en) | 2007-02-28 |
US7542317B2 (en) | 2009-06-02 |
US20070051974A1 (en) | 2007-03-08 |
CN100555624C (zh) | 2009-10-28 |
EP2568787B1 (en) | 2016-10-12 |
EP1758440B1 (en) | 2013-06-12 |
EP1758440A3 (en) | 2012-01-11 |
JP2007059737A (ja) | 2007-03-08 |
CN1921105A (zh) | 2007-02-28 |
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