JP6150998B2 - 内部および外部光学要素による光取出しを向上させた発光ダイオード - Google Patents
内部および外部光学要素による光取出しを向上させた発光ダイオード Download PDFInfo
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Description
本発明は、発光ダイオード、より詳細にはそれらの光取出し(light extraction)を向上させる新規な構造に関する。
発光ダイオード(LED)は、電気的エネルギーを光に変換する固体デバイスの重要な一種であり、通常、逆にドープされた2つの層に挟まれる半導体材料からなる活性層を備える。バイアスをドープ層の間に加えると、正孔と電子が活性層に注入され、そこでこれらは再結合して発光する。活性領域で発生した光はあらゆる方向に放出され、光はすべての露出表面を通して半導体チップから出て行く。通常、LEDのパッケージが出て行く光を望ましい放出光出力プロフィールへと方向づけるために用いられている。
[第1の実施形態]
図1は、本発明に従って構成された新規のLED10の一実施形態を示す図である。この新規のLEDは、逆にドープされた2つの層14、15に挟まれた活性層13からなるLED構造体12を有する。好ましいLED構造体12では、層14、15を逆にドープしても機能するであろうが、最上層14がp型であり、最下層15はn型である。新規のLEDは、第1コンタクトパッド18からLED構造体の最下層15に電流を広げる導体材料からなる第1スプレッダ層16を有する。第1コンタクトパッド18は、好ましい実施形態において最下層15はn型であるために、n−コンタクトパッドとも呼ばれる。導電性材料からなる第2スプレッダ層20も、LED構造体の最上層14上に含められて、第2コンタクト22から最上層14に電流を拡散させる。第2コンタクト22は、好ましいLED構造体12では最上層14はp型であるために、p−コンタクトとも呼ばれる。LED構造体、スプレッダ層およびコンタクトは、第1スプレッダ層を基板24に隣接させて基板24の上に形成される。
図2は、本発明に従って構成された新規のLED30からなる第2の実施形態を示す図である。それは図1のLED10に類似しており、同じLED構造体12、第1スプレッダ16、基板24、第2スプレッダ20、およびn−p−コンタクトパッド18およびp−コンタクトパッド22を有する。基板が導電性の場合、基板24上にn−コンタクト28をもつこともできる。
図4は、本発明に従って構成された新規のLED60からなる第3の実施形態を示す図である。それはまたLED構造体62、第1スプレッダ層64、基板66、n−コンタクト68、第2スプレッダ70、およびp−コンタクト72をもち、これらはLED10および20と同様に配置されている。しかし、この実施形態においては、LEE74はLEDデバイスの内部に、好ましくは基板66と第1スプレッダ64の間の境界面にアレイとして形成されている。このLEE材料の屈折率(n2)は、普通は補足される光をLED60から光が出て行くことができる方向へ向け直すことができる反射と屈折が起こるように、第1スプレッダ材料(n1)と異なっていなければならない。
図5は、本発明に従って構成された新規のLED70からなる第4の実施形態を示す図である。それは、前記実施形態と同じLED構造体72、スプレッダ層75、76、基板70およびコンタクト80、82をもつ。しかし、この実施形態では、エピタキシャル材料84の層を、LEE86の形成の前に基板上に成長させる。MOCVD、VPE、あるいはMBEにより、エピタキシャル層84を成長させる。次にLEE86がエピタキシャル層表面上にアレイとして形成され、そして第2スプレッダ75の残りの部分がLEE86の上に形成される。LEEアレイの上にLED構造体72を容易に再成長させるためにこの実施形態を用ることができるが、1つの余計なエピタキシャル成長ステップを必要とする。
図7は、前記のLEDと同じ層を有する新規のLED100からなる第6の実施形態を示す図である。この実施形態では、基板104と第1スプレッダ106の間の境界面ではあるが基板104内に、LEE102がアレイとして配置されている。LEE102は、マスクを用いてウェット化学あるいはドライエッチング技術により基板をエッチングすることにより、基板104に直接形成される。次に、エッチングされた領域にLEEを成長させ、そしてMOCVD、VPE、あるいはMBEによりLEDの残りの層をLEEの上に成長させる。LEEは、エピタキシャル材料の再成長の後に基板に残された空孔、あるいはエッチングされた部分を満たすエピタキシャル材料でありうる。
図8は、LED構造体114のエピタキシャル側の一番上でまた第2電流スプレッダ層116の上側の分散体層112を用いる新規のLED110からなる第7の実施形態を示す図である。やはり、基板、LED層、およびLEDコンタクトは今までの実施形態で記載されたものと同じタイプである。最も効果的であるために、分散体層の屈折率n2をLED封止材料の屈折率n1より大きくすべきである。一般に、屈折率n2が大きくなる程、光取出しは向上する。分散体層の粒子は隣接粒子間で、20μmから1μmの距離をもつべきである。粒子サイズは20nmから1μmであるべきである。他の方法として、分散体層は異なる屈折率をもつ材料層における一連の空孔でありうる。
図9は、図8のLED110の変形形態である新規のLED120を示す図である。LED120は同じLED層をもつが、この実施形態では分散体層122が基板124の下側表面に付けられている。この方法は、SiC上のAlInGaNエピタキシャル層などのような、基板の屈折率がLEDエピタキシャル層に似ているLEDに特に適切である。
図10および図11は、それぞれの分散体層134、144が第1スプレッダ層132、142内に配置される、新規のLED130と140を示す図である。これらの実施形態では、光の散乱が起こるように、分散体層の屈折率n2は、第1スプレッダ層の屈折率n1と違っていなければならない。この分散体層にとって好ましい材料は、シリカあるいはTiO2マイクロスフィアである。
MOCVDをエピタキシャル成長のツールとして用いる場合、in−situな技術を用いて分散体層をLEDに形成することができる。この技術はGaN系LEDに対して特に適切である。図12および図13は、第1スプレッダ層154、164に自然位(in−situ)に形成された分散体層152、162を有する、2つのLED150および160を示す図である。LED150において、その基板155はSiCあるいはサファイアでできており、また第1スプレッダ154がAlxInyGa1-x-yN、0≦x≦1、0≦y≦1からなる材料の融合していない島(uncoalesced island)から形成される。第1スプレッダの成長の初期段階の間に、島156が形成される。島156の融合に先立って成長を止めて、そしてAlGaN、SiO2、あるいはSiNなどの低屈折率材料からなる層152を島の上および/または間に堆積させて、必要な内部屈折率の不連続を作り出す。次に成長は通常のように進んで、第1スプレッダ層とLED構造体を完成する。
最後に、前記に列挙されたすべての実施形態において、フリップ−チップボンディング技術を用いてデバイスを実装することができる。図14は、そのような構成に結合された新規のLED170を示す図である。LED構造体172は、導電性反射層175でコートされており、第2スプレッダ層189は、導電性結合媒体により反射層175に付けられている。次いでサブマウント176が第2スプレッダ層189上に実装されている。p−コンタクト188がサブマウント176上に含められて、第2スプレッダ層189に結合している。p−コンタクト188に流れた電流は第2スプレッダ層に、そしてLED構造体の最上層に広がる。
Claims (9)
- 光取出しを向上させた発光ダイオードであって、
p型層と、
n型層と、
前記p型層およびn型層の間の活性層を備え、前記p型あるいはn型層のいずれかが上部層で、他方が下部層であり、
前記下部層に近接する第1スプレッダ層と、
前記上部層の上の第2スプレッダ層と、
前記スプレッダ層上のそれぞれの電気的コンタクトを備え、前記コンタクトの間に加えられたバイアスが前記活性層で発光させ、
前記第1スプレッダ層に近接する基板と、
前記第1スプレッダ層に近接し、前記各層に平行に並び、また実質的に前記発光ダイオードを覆う光取出し構造体を備え、前記光取出し構造体が、前記発光ダイオードからの光取出しを増大させ、
前記光取出し構造体が、表面が曲がっているかあるいは区分的にリニアである光取出し要素からなる不規則なアレイを含むことを特徴とする発光ダイオード。 - 前記光取出し構造体が、エピタキシャル材料を含むことを特徴とする請求項1に記載の発光ダイオード。
- 前記光取出し構造体が前記発光ダイオード層内部にあることを特徴とする請求項1に記載の発光ダイオード。
- 前記光取出し構造体が前記基板と前記第1スプレッダ層の間の境界面にあり、前記構造体が実質的に前記第1スプレッダ層内にあることを特徴とする請求項1に記載の発光ダイオード。
- 前記光取出し構造体が前記第1スプレッダ層内にあることを特徴とする請求項1に記載の発光ダイオード。
- 前記光取出し構造体が前記基板と前記第1スプレッダ層の間の境界面にあり、前記構造体が実質的に前記基板内にあることを特徴とする請求項1に記載の発光ダイオード。
- 光取出しが向上した発光ダイオード(LED)であって、
エピタキシャル成長させたp型層と、エピタキシャル成長させたn型層と、前記p型層およびn型層の間のエピタキシャル成長させた活性層とを有する発光ダイオード構造体と、
該発光ダイオード構造体上に堆積させた反射層と、
該反射層上の第2スプレッダ層と、
該第2スプレッダ層上のサブマウントと、
前記発光ダイオード構造体に近接し、前記反射層の反対側の第1スプレッダ層を備え、
前記第1および第2スプレッダ層の間に加えられたバイアスが前記活性層で発光させ、
前記第1スプレッダ層に近接した光取出し構造体を備え、前記光取出し構造体が前記発光ダイオード構造体に平行に並び、また実質的に前記発光ダイオードの領域を覆っており、
前記光取出し構造体が、表面が曲がっているかあるいは区分的にリニアである光取出し要素からなる不規則なアレイを含むことを特徴とする発光ダイオード。 - 前記光取出し構造体が、エピタキシャル材料を含むことを特徴とする請求項7に記載の発光ダイオード。
- 前記サブマウント上でまた前記第2スプレッダ層に近接するp−コンタクト、前記サブマウントと前記第1スプレッダ層の間の導電性媒体、および前記サブマウント上でまた前記導電性媒体に近接するn−コンタクトをさらに含み、前記p−およびn−コンタクトの間に加えられたバイアスが前記発光ダイオード構造体を発光させることを特徴とする請求項7に記載の発光ダイオード。
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Families Citing this family (510)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6380628B2 (en) * | 1999-08-18 | 2002-04-30 | International Business Machines Corporation | Microstructure liner having improved adhesion |
WO2001041225A2 (en) | 1999-12-03 | 2001-06-07 | Cree Lighting Company | Enhanced light extraction in leds through the use of internal and external optical elements |
US7064355B2 (en) | 2000-09-12 | 2006-06-20 | Lumileds Lighting U.S., Llc | Light emitting diodes with improved light extraction efficiency |
JP2002141556A (ja) | 2000-09-12 | 2002-05-17 | Lumileds Lighting Us Llc | 改良された光抽出効果を有する発光ダイオード |
US7053419B1 (en) | 2000-09-12 | 2006-05-30 | Lumileds Lighting U.S., Llc | Light emitting diodes with improved light extraction efficiency |
EP1330847A1 (en) * | 2000-11-02 | 2003-07-30 | 3M Innovative Properties Company | Brightness enhancement of emissive displays |
JP2002208541A (ja) * | 2001-01-11 | 2002-07-26 | Shiro Sakai | 窒化物系半導体装置及びその製造方法 |
US6791119B2 (en) | 2001-02-01 | 2004-09-14 | Cree, Inc. | Light emitting diodes including modifications for light extraction |
WO2002065556A1 (fr) * | 2001-02-15 | 2002-08-22 | Sharp Kabushiki Kaisha | Element de source lumineuse a semi-conducteur a base de nitrure et son procede de realisation |
US6987613B2 (en) | 2001-03-30 | 2006-01-17 | Lumileds Lighting U.S., Llc | Forming an optical element on the surface of a light emitting device for improved light extraction |
US6897704B2 (en) * | 2001-05-25 | 2005-05-24 | Thunder Creative Technologies, Inc. | Electronic isolator |
US6946788B2 (en) | 2001-05-29 | 2005-09-20 | Toyoda Gosei Co., Ltd. | Light-emitting element |
JP3548735B2 (ja) * | 2001-06-29 | 2004-07-28 | 士郎 酒井 | 窒化ガリウム系化合物半導体の製造方法 |
US6563142B2 (en) * | 2001-07-11 | 2003-05-13 | Lumileds Lighting, U.S., Llc | Reducing the variation of far-field radiation patterns of flipchip light emitting diodes |
US6888167B2 (en) * | 2001-07-23 | 2005-05-03 | Cree, Inc. | Flip-chip bonding of light emitting devices and light emitting devices suitable for flip-chip bonding |
JP5800452B2 (ja) * | 2001-07-24 | 2015-10-28 | 日亜化学工業株式会社 | 半導体発光素子 |
JP4356723B2 (ja) * | 2001-07-24 | 2009-11-04 | 日亜化学工業株式会社 | 窒化物半導体発光素子の製造方法 |
JP4055503B2 (ja) * | 2001-07-24 | 2008-03-05 | 日亜化学工業株式会社 | 半導体発光素子 |
TW576864B (en) * | 2001-12-28 | 2004-02-21 | Toshiba Corp | Method for manufacturing a light-emitting device |
EP1536487A4 (en) * | 2002-05-28 | 2008-02-06 | Matsushita Electric Works Ltd | LIGHT EMISSION ELEMENT, LIGHT EMITTING DEVICE AND THIS USE SURFACE EMISSION LIGHTING DEVICE |
JP2004056088A (ja) * | 2002-05-31 | 2004-02-19 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体発光素子 |
US6878969B2 (en) * | 2002-07-29 | 2005-04-12 | Matsushita Electric Works, Ltd. | Light emitting device |
DE10234977A1 (de) * | 2002-07-31 | 2004-02-12 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Dünnschicht-Halbleiterbauelement auf GaN-Basis |
KR100499129B1 (ko) | 2002-09-02 | 2005-07-04 | 삼성전기주식회사 | 발광 다이오드 및 그 제조방법 |
DE10245628A1 (de) * | 2002-09-30 | 2004-04-15 | Osram Opto Semiconductors Gmbh | Elektromagnetische Strahlung emittierender Halbleiterchip und Verfahren zu dessen Herstellung |
DE10245631B4 (de) | 2002-09-30 | 2022-01-20 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterbauelement |
US7071494B2 (en) * | 2002-12-11 | 2006-07-04 | Lumileds Lighting U.S. Llc | Light emitting device with enhanced optical scattering |
US7492092B2 (en) * | 2002-12-17 | 2009-02-17 | Seiko Epson Corporation | Self-emitting element, display panel, display apparatus, and method of manufacturing self-emitting element |
EP2262006A3 (en) * | 2003-02-26 | 2012-03-21 | Cree, Inc. | Composite white light source and method for fabricating |
US7262550B2 (en) | 2003-04-15 | 2007-08-28 | Luminus Devices, Inc. | Light emitting diode utilizing a physical pattern |
US7084434B2 (en) | 2003-04-15 | 2006-08-01 | Luminus Devices, Inc. | Uniform color phosphor-coated light-emitting diode |
US20040259279A1 (en) | 2003-04-15 | 2004-12-23 | Erchak Alexei A. | Light emitting device methods |
US7667238B2 (en) | 2003-04-15 | 2010-02-23 | Luminus Devices, Inc. | Light emitting devices for liquid crystal displays |
US7105861B2 (en) | 2003-04-15 | 2006-09-12 | Luminus Devices, Inc. | Electronic device contact structures |
US7521854B2 (en) | 2003-04-15 | 2009-04-21 | Luminus Devices, Inc. | Patterned light emitting devices and extraction efficiencies related to the same |
US7083993B2 (en) * | 2003-04-15 | 2006-08-01 | Luminus Devices, Inc. | Methods of making multi-layer light emitting devices |
US7166871B2 (en) * | 2003-04-15 | 2007-01-23 | Luminus Devices, Inc. | Light emitting systems |
US7211831B2 (en) * | 2003-04-15 | 2007-05-01 | Luminus Devices, Inc. | Light emitting device with patterned surfaces |
US7274043B2 (en) | 2003-04-15 | 2007-09-25 | Luminus Devices, Inc. | Light emitting diode systems |
US6831302B2 (en) | 2003-04-15 | 2004-12-14 | Luminus Devices, Inc. | Light emitting devices with improved extraction efficiency |
US7074631B2 (en) | 2003-04-15 | 2006-07-11 | Luminus Devices, Inc. | Light emitting device methods |
US7098589B2 (en) | 2003-04-15 | 2006-08-29 | Luminus Devices, Inc. | Light emitting devices with high light collimation |
US7714345B2 (en) * | 2003-04-30 | 2010-05-11 | Cree, Inc. | Light-emitting devices having coplanar electrical contacts adjacent to a substrate surface opposite an active region and methods of forming the same |
EP2264798B1 (en) | 2003-04-30 | 2020-10-14 | Cree, Inc. | High powered light emitter packages with compact optics |
US7005679B2 (en) | 2003-05-01 | 2006-02-28 | Cree, Inc. | Multiple component solid state white light |
JP2005005557A (ja) * | 2003-06-13 | 2005-01-06 | Hitachi Cable Ltd | 半導体発光素子の製造方法 |
JP2005019541A (ja) * | 2003-06-24 | 2005-01-20 | Rohm Co Ltd | 光半導体装置 |
TWI330413B (en) | 2005-01-25 | 2010-09-11 | Epistar Corp | A light-emitting device |
CN1306625C (zh) * | 2003-07-16 | 2007-03-21 | 璨圆光电股份有限公司 | 发光二极管结构及其制造方法 |
US7009213B2 (en) | 2003-07-31 | 2006-03-07 | Lumileds Lighting U.S., Llc | Light emitting devices with improved light extraction efficiency |
WO2005018008A1 (ja) * | 2003-08-19 | 2005-02-24 | Nichia Corporation | 半導体素子 |
JP2007504639A (ja) * | 2003-08-29 | 2007-03-01 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 放射放出半導体素子 |
DE10340271B4 (de) * | 2003-08-29 | 2019-01-17 | Osram Opto Semiconductors Gmbh | Dünnschicht-Leuchtdiodenchip und Verfahren zu seiner Herstellung |
DE10346605B4 (de) * | 2003-08-29 | 2022-02-24 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Strahlungemittierendes Halbleiterbauelement |
US7341880B2 (en) * | 2003-09-17 | 2008-03-11 | Luminus Devices, Inc. | Light emitting device processes |
US7344903B2 (en) | 2003-09-17 | 2008-03-18 | Luminus Devices, Inc. | Light emitting device processes |
CN100452328C (zh) * | 2003-09-19 | 2009-01-14 | 霆激技术有限公司 | 半导体器件上导电金属层的制作 |
TWI228272B (en) * | 2003-09-19 | 2005-02-21 | Tinggi Technologies Pte Ltd | Fabrication of semiconductor devices |
WO2005041313A1 (de) * | 2003-09-26 | 2005-05-06 | Osram Opto Semiconductors Gmbh | Strahlungsemittierender dünnschicht-halbleiterchip |
JP4093943B2 (ja) * | 2003-09-30 | 2008-06-04 | 三洋電機株式会社 | 発光素子およびその製造方法 |
KR100714639B1 (ko) * | 2003-10-21 | 2007-05-07 | 삼성전기주식회사 | 발광 소자 |
US7070301B2 (en) | 2003-11-04 | 2006-07-04 | 3M Innovative Properties Company | Side reflector for illumination using light emitting diode |
TWI250669B (en) * | 2003-11-26 | 2006-03-01 | Sanken Electric Co Ltd | Semiconductor light emitting element and its manufacturing method |
WO2005064666A1 (en) | 2003-12-09 | 2005-07-14 | The Regents Of The University Of California | Highly efficient gallium nitride based light emitting diodes via surface roughening |
US7450311B2 (en) | 2003-12-12 | 2008-11-11 | Luminus Devices, Inc. | Optical display systems and methods |
US7189591B2 (en) * | 2003-12-19 | 2007-03-13 | Nitto Denko Corporation | Process for producing light-emitting semiconductor device |
US7090357B2 (en) | 2003-12-23 | 2006-08-15 | 3M Innovative Properties Company | Combined light source for projection display |
JP2005191099A (ja) * | 2003-12-24 | 2005-07-14 | ▲さん▼圓光電股▲ふん▼有限公司 | 発光ダイオード装置 |
KR100581831B1 (ko) * | 2004-02-05 | 2006-05-23 | 엘지전자 주식회사 | 발광 다이오드 |
US7246923B2 (en) | 2004-02-11 | 2007-07-24 | 3M Innovative Properties Company | Reshaping light source modules and illumination systems using the same |
US7300177B2 (en) | 2004-02-11 | 2007-11-27 | 3M Innovative Properties | Illumination system having a plurality of light source modules disposed in an array with a non-radially symmetrical aperture |
US7427146B2 (en) | 2004-02-11 | 2008-09-23 | 3M Innovative Properties Company | Light-collecting illumination system |
TWM271252U (en) * | 2004-12-14 | 2005-07-21 | Niching Ind Corp | Package structure of light-emitting device |
KR101079415B1 (ko) * | 2004-02-27 | 2011-11-02 | 엘지전자 주식회사 | 반도체 발광소자 및 그 제조방법 |
JP4868709B2 (ja) * | 2004-03-09 | 2012-02-01 | 三洋電機株式会社 | 発光素子 |
JP2005259891A (ja) * | 2004-03-10 | 2005-09-22 | Toyoda Gosei Co Ltd | 発光装置 |
EP1730790B1 (en) * | 2004-03-15 | 2011-11-09 | Tinggi Technologies Private Limited | Fabrication of semiconductor devices |
US7385226B2 (en) * | 2004-03-24 | 2008-06-10 | Epistar Corporation | Light-emitting device |
TWI237402B (en) * | 2004-03-24 | 2005-08-01 | Epistar Corp | High luminant device |
KR100568297B1 (ko) | 2004-03-30 | 2006-04-05 | 삼성전기주식회사 | 질화물 반도체 발광 소자 및 그 제조 방법 |
US7419912B2 (en) * | 2004-04-01 | 2008-09-02 | Cree, Inc. | Laser patterning of light emitting devices |
EP1756875A4 (en) * | 2004-04-07 | 2010-12-29 | Tinggi Technologies Private Ltd | FABRICATION OF A RETROFLECTIVE LAYER ON SEMICONDUCTOR ELECTROLUMINESCENT DIODES |
US7064356B2 (en) | 2004-04-16 | 2006-06-20 | Gelcore, Llc | Flip chip light emitting diode with micromesas and a conductive mesh |
KR100730114B1 (ko) * | 2004-04-19 | 2007-06-19 | 삼성에스디아이 주식회사 | 평판표시장치 |
JP2005354020A (ja) * | 2004-05-10 | 2005-12-22 | Univ Meijo | 半導体発光素子製造方法および半導体発光素子 |
US7101050B2 (en) | 2004-05-14 | 2006-09-05 | 3M Innovative Properties Company | Illumination system with non-radially symmetrical aperture |
US7791061B2 (en) | 2004-05-18 | 2010-09-07 | Cree, Inc. | External extraction light emitting diode based upon crystallographic faceted surfaces |
US7768023B2 (en) * | 2005-10-14 | 2010-08-03 | The Regents Of The University Of California | Photonic structures for efficient light extraction and conversion in multi-color light emitting devices |
US7345298B2 (en) * | 2005-02-28 | 2008-03-18 | The Regents Of The University Of California | Horizontal emitting, vertical emitting, beam shaped, distributed feedback (DFB) lasers by growth over a patterned substrate |
US8227820B2 (en) * | 2005-02-09 | 2012-07-24 | The Regents Of The University Of California | Semiconductor light-emitting device |
US7582910B2 (en) * | 2005-02-28 | 2009-09-01 | The Regents Of The University Of California | High efficiency light emitting diode (LED) with optimized photonic crystal extractor |
TWI433343B (zh) * | 2004-06-22 | 2014-04-01 | Verticle Inc | 具有改良光輸出的垂直構造半導體裝置 |
US7161188B2 (en) * | 2004-06-28 | 2007-01-09 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light emitting element, semiconductor light emitting device, and method for fabricating semiconductor light emitting element |
DE102005013894B4 (de) * | 2004-06-30 | 2010-06-17 | Osram Opto Semiconductors Gmbh | Elektromagnetische Strahlung erzeugender Halbleiterchip und Verfahren zu dessen Herstellung |
US7795623B2 (en) | 2004-06-30 | 2010-09-14 | Cree, Inc. | Light emitting devices having current reducing structures and methods of forming light emitting devices having current reducing structures |
US7534633B2 (en) * | 2004-07-02 | 2009-05-19 | Cree, Inc. | LED with substrate modifications for enhanced light extraction and method of making same |
KR100649494B1 (ko) * | 2004-08-17 | 2006-11-24 | 삼성전기주식회사 | 레이저를 이용하여 발광 다이오드 기판을 표면 처리하는발광 다이오드 제조 방법 및 이 방법에 의해 제조된 발광다이오드 |
US20060038188A1 (en) | 2004-08-20 | 2006-02-23 | Erchak Alexei A | Light emitting diode systems |
US7390097B2 (en) | 2004-08-23 | 2008-06-24 | 3M Innovative Properties Company | Multiple channel illumination system |
KR20070046024A (ko) * | 2004-08-31 | 2007-05-02 | 각코우호우징 메이조다이가쿠 | 반도체 발광 소자 제조 방법 및 반도체 발광 소자 |
JP2006100787A (ja) * | 2004-08-31 | 2006-04-13 | Toyoda Gosei Co Ltd | 発光装置および発光素子 |
US7476910B2 (en) | 2004-09-10 | 2009-01-13 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device and method for manufacturing the same |
US8513686B2 (en) * | 2004-09-22 | 2013-08-20 | Cree, Inc. | High output small area group III nitride LEDs |
US7259402B2 (en) * | 2004-09-22 | 2007-08-21 | Cree, Inc. | High efficiency group III nitride-silicon carbide light emitting diode |
US7737459B2 (en) * | 2004-09-22 | 2010-06-15 | Cree, Inc. | High output group III nitride light emitting diodes |
US8174037B2 (en) | 2004-09-22 | 2012-05-08 | Cree, Inc. | High efficiency group III nitride LED with lenticular surface |
US20060091411A1 (en) | 2004-10-29 | 2006-05-04 | Ouderkirk Andrew J | High brightness LED package |
US7404756B2 (en) | 2004-10-29 | 2008-07-29 | 3M Innovative Properties Company | Process for manufacturing optical and semiconductor elements |
US7304425B2 (en) | 2004-10-29 | 2007-12-04 | 3M Innovative Properties Company | High brightness LED package with compound optical element(s) |
US7329982B2 (en) | 2004-10-29 | 2008-02-12 | 3M Innovative Properties Company | LED package with non-bonded optical element |
US7419839B2 (en) | 2004-11-12 | 2008-09-02 | Philips Lumileds Lighting Company, Llc | Bonding an optical element to a light emitting device |
US7462502B2 (en) | 2004-11-12 | 2008-12-09 | Philips Lumileds Lighting Company, Llc | Color control by alteration of wavelength converting element |
KR100682872B1 (ko) * | 2004-12-08 | 2007-02-15 | 삼성전기주식회사 | 고효율 반도체 발광 소자 및 그 제조방법 |
US20070145386A1 (en) * | 2004-12-08 | 2007-06-28 | Samsung Electro-Mechanics Co., Ltd. | Semiconductor light emitting device and method of manufacturing the same |
KR100624449B1 (ko) * | 2004-12-08 | 2006-09-18 | 삼성전기주식회사 | 요철 구조를 포함하는 발광 소자 및 그 제조 방법 |
US8288942B2 (en) | 2004-12-28 | 2012-10-16 | Cree, Inc. | High efficacy white LED |
KR100638666B1 (ko) * | 2005-01-03 | 2006-10-30 | 삼성전기주식회사 | 질화물 반도체 발광소자 |
FI118196B (fi) * | 2005-07-01 | 2007-08-15 | Optogan Oy | Puolijohderakenne ja puolijohderakenteen valmistusmenetelmä |
US9130114B2 (en) | 2005-01-11 | 2015-09-08 | SemiLEDs Optoelectronics Co., Ltd. | Vertical light emitting diode (VLED) dice having confinement layers with roughened surfaces and methods of fabrication |
US7563625B2 (en) * | 2005-01-11 | 2009-07-21 | SemiLEDs Optoelectronics Co., Ltd. | Method of making light-emitting diodes (LEDs) with improved light extraction by roughening |
US7473936B2 (en) * | 2005-01-11 | 2009-01-06 | Semileds Corporation | Light emitting diodes (LEDs) with improved light extraction by roughening |
US7413918B2 (en) | 2005-01-11 | 2008-08-19 | Semileds Corporation | Method of making a light emitting diode |
US7524686B2 (en) * | 2005-01-11 | 2009-04-28 | Semileds Corporation | Method of making light emitting diodes (LEDs) with improved light extraction by roughening |
US7186580B2 (en) * | 2005-01-11 | 2007-03-06 | Semileds Corporation | Light emitting diodes (LEDs) with improved light extraction by roughening |
US7897420B2 (en) * | 2005-01-11 | 2011-03-01 | SemiLEDs Optoelectronics Co., Ltd. | Light emitting diodes (LEDs) with improved light extraction by roughening |
US7692207B2 (en) * | 2005-01-21 | 2010-04-06 | Luminus Devices, Inc. | Packaging designs for LEDs |
US7170100B2 (en) | 2005-01-21 | 2007-01-30 | Luminus Devices, Inc. | Packaging designs for LEDs |
US7335920B2 (en) * | 2005-01-24 | 2008-02-26 | Cree, Inc. | LED with current confinement structure and surface roughening |
CN100431182C (zh) * | 2005-01-28 | 2008-11-05 | 晶元光电股份有限公司 | 发光组件 |
JP2006222288A (ja) * | 2005-02-10 | 2006-08-24 | Toshiba Corp | 白色led及びその製造方法 |
US7652299B2 (en) * | 2005-02-14 | 2010-01-26 | Showa Denko K.K. | Nitride semiconductor light-emitting device and method for fabrication thereof |
US9508902B2 (en) | 2005-02-21 | 2016-11-29 | Epistar Corporation | Optoelectronic semiconductor device |
US8097897B2 (en) | 2005-06-21 | 2012-01-17 | Epistar Corporation | High-efficiency light-emitting device and manufacturing method thereof |
US7932111B2 (en) * | 2005-02-23 | 2011-04-26 | Cree, Inc. | Substrate removal process for high light extraction LEDs |
US7291864B2 (en) * | 2005-02-28 | 2007-11-06 | The Regents Of The University Of California | Single or multi-color high efficiency light emitting diode (LED) by growth over a patterned substrate |
US20070045640A1 (en) | 2005-08-23 | 2007-03-01 | Erchak Alexei A | Light emitting devices for liquid crystal displays |
US20060204865A1 (en) * | 2005-03-08 | 2006-09-14 | Luminus Devices, Inc. | Patterned light-emitting devices |
KR100712753B1 (ko) * | 2005-03-09 | 2007-04-30 | 주식회사 실트론 | 화합물 반도체 장치 및 그 제조방법 |
JP2006310721A (ja) * | 2005-03-28 | 2006-11-09 | Yokohama National Univ | 自発光デバイス |
KR100588377B1 (ko) * | 2005-05-10 | 2006-06-09 | 삼성전기주식회사 | 수직구조 질화갈륨계 발광다이오드 소자 및 그 제조방법 |
EP1883977A1 (en) * | 2005-05-12 | 2008-02-06 | Philips Intellectual Property & Standards GmbH | Electroluminescence light source |
JP5082278B2 (ja) * | 2005-05-16 | 2012-11-28 | ソニー株式会社 | 発光ダイオードの製造方法、集積型発光ダイオードの製造方法および窒化物系iii−v族化合物半導体の成長方法 |
CN100452452C (zh) * | 2005-05-17 | 2009-01-14 | 财团法人工业技术研究院 | 备有发光二极管的翻转侧置结构的发光装置 |
KR100638819B1 (ko) * | 2005-05-19 | 2006-10-27 | 삼성전기주식회사 | 광추출효율이 개선된 수직구조 질화물 반도체 발광소자 |
KR100654533B1 (ko) * | 2005-05-24 | 2006-12-06 | 엘지전자 주식회사 | 광 추출용 나노 로드를 갖는 발광 소자 및 그의 제조방법 |
TWI248691B (en) * | 2005-06-03 | 2006-02-01 | Formosa Epitaxy Inc | Light emitting diode and method of fabricating thereof |
CN100343983C (zh) * | 2005-06-09 | 2007-10-17 | 华南师范大学 | 用于红外光探测的雪崩光电二极管的二次封装装置 |
CN100423303C (zh) * | 2005-06-09 | 2008-10-01 | 璨圆光电股份有限公司 | 发光二极管及其制造方法 |
US8163575B2 (en) * | 2005-06-17 | 2012-04-24 | Philips Lumileds Lighting Company Llc | Grown photonic crystals in semiconductor light emitting devices |
WO2007102627A1 (en) * | 2005-07-06 | 2007-09-13 | Lg Innotek Co., Ltd | Nitride semiconductor led and fabrication metho thereof |
DE112006001835T5 (de) * | 2005-07-11 | 2008-05-15 | GELcore, LLC (n.d.Ges.d. Staates Delaware), Valley View | Laserabgehobene LED mit verbesserter Lichtausbeute |
US20070018186A1 (en) * | 2005-07-19 | 2007-01-25 | Lg Chem, Ltd. | Light emitting diode device having advanced light extraction efficiency and preparation method thereof |
KR100958590B1 (ko) * | 2005-08-19 | 2010-05-18 | 한빔 주식회사 | 광추출 효율을 높인 발광다이오드 소자 및 이의 제조방법 |
KR100900525B1 (ko) * | 2005-08-19 | 2009-06-02 | 한빔 주식회사 | 광추출 효율을 높인 발광다이오드 소자 및 이의 제조방법 |
US20070018182A1 (en) * | 2005-07-20 | 2007-01-25 | Goldeneye, Inc. | Light emitting diodes with improved light extraction and reflectivity |
US8674375B2 (en) * | 2005-07-21 | 2014-03-18 | Cree, Inc. | Roughened high refractive index layer/LED for high light extraction |
KR100668964B1 (ko) * | 2005-09-27 | 2007-01-12 | 엘지전자 주식회사 | 나노 홈을 갖는 발광 소자 및 그의 제조 방법 |
SG130975A1 (en) * | 2005-09-29 | 2007-04-26 | Tinggi Tech Private Ltd | Fabrication of semiconductor devices for light emission |
EP1932188A4 (en) * | 2005-10-07 | 2011-06-22 | Osram Sylvania Inc | THERMAL DISSIPATOR LED LIGHT TRANSMITTER |
US7391059B2 (en) * | 2005-10-17 | 2008-06-24 | Luminus Devices, Inc. | Isotropic collimation devices and related methods |
US7348603B2 (en) * | 2005-10-17 | 2008-03-25 | Luminus Devices, Inc. | Anisotropic collimation devices and related methods |
US20070085098A1 (en) * | 2005-10-17 | 2007-04-19 | Luminus Devices, Inc. | Patterned devices and related methods |
US7388233B2 (en) * | 2005-10-17 | 2008-06-17 | Luminus Devices, Inc. | Patchwork patterned devices and related methods |
SG131803A1 (en) * | 2005-10-19 | 2007-05-28 | Tinggi Tech Private Ltd | Fabrication of transistors |
TWI451597B (zh) * | 2010-10-29 | 2014-09-01 | Epistar Corp | 光電元件及其製造方法 |
KR100703158B1 (ko) * | 2005-10-24 | 2007-04-06 | 삼성전자주식회사 | 표시장치와 그 제조방법 |
JP2007123381A (ja) * | 2005-10-26 | 2007-05-17 | Toyota Central Res & Dev Lab Inc | 半導体発光素子 |
JP2007150259A (ja) * | 2005-11-02 | 2007-06-14 | Sharp Corp | 窒化物半導体発光素子およびその製造方法 |
TW200735418A (en) * | 2005-11-22 | 2007-09-16 | Rohm Co Ltd | Nitride semiconductor device |
KR100640497B1 (ko) * | 2005-11-24 | 2006-11-01 | 삼성전기주식회사 | 수직 구조 질화갈륨계 발광다이오드 소자 |
US8729580B2 (en) * | 2005-12-06 | 2014-05-20 | Toshiba Techno Center, Inc. | Light emitter with metal-oxide coating |
SG133432A1 (en) * | 2005-12-20 | 2007-07-30 | Tinggi Tech Private Ltd | Localized annealing during semiconductor device fabrication |
KR20090009772A (ko) | 2005-12-22 | 2009-01-23 | 크리 엘이디 라이팅 솔루션즈, 인크. | 조명 장치 |
US7798678B2 (en) * | 2005-12-30 | 2010-09-21 | 3M Innovative Properties Company | LED with compound encapsulant lens |
US7772604B2 (en) | 2006-01-05 | 2010-08-10 | Illumitex | Separate optical device for directing light from an LED |
US20100084679A1 (en) * | 2006-01-06 | 2010-04-08 | Epistar Corporation | Light-emitting device |
US20080128734A1 (en) * | 2006-01-06 | 2008-06-05 | Epistar Corporation | Light-emitting device |
JP2007194289A (ja) * | 2006-01-17 | 2007-08-02 | Sumitomo Chemical Co Ltd | 半導体発光デバイス及びその製造方法 |
US8441179B2 (en) | 2006-01-20 | 2013-05-14 | Cree, Inc. | Lighting devices having remote lumiphors that are excited by lumiphor-converted semiconductor excitation sources |
US8264138B2 (en) | 2006-01-20 | 2012-09-11 | Cree, Inc. | Shifting spectral content in solid state light emitters by spatially separating lumiphor films |
KR101241477B1 (ko) | 2006-01-27 | 2013-03-08 | 엘지이노텍 주식회사 | 질화물 반도체 발광소자 및 그 제조 방법 |
JP2007220865A (ja) * | 2006-02-16 | 2007-08-30 | Sumitomo Chemical Co Ltd | 3族窒化物半導体発光素子およびその製造方法 |
US7622746B1 (en) * | 2006-03-17 | 2009-11-24 | Bridgelux, Inc. | Highly reflective mounting arrangement for LEDs |
SE529711C2 (sv) * | 2006-03-22 | 2007-11-06 | Aamic Ab | Fluorescensläsare |
KR101198763B1 (ko) * | 2006-03-23 | 2012-11-12 | 엘지이노텍 주식회사 | 기둥 구조와 이를 이용한 발광 소자 및 그 형성방법 |
JP2007273506A (ja) * | 2006-03-30 | 2007-10-18 | Sumitomo Chemical Co Ltd | 化合物半導体発光素子 |
EP2011164B1 (en) | 2006-04-24 | 2018-08-29 | Cree, Inc. | Side-view surface mount white led |
KR100828873B1 (ko) * | 2006-04-25 | 2008-05-09 | 엘지이노텍 주식회사 | 질화물 반도체 발광소자 및 그 제조방법 |
US7521727B2 (en) * | 2006-04-26 | 2009-04-21 | Rohm And Haas Company | Light emitting device having improved light extraction efficiency and method of making same |
US7955531B1 (en) | 2006-04-26 | 2011-06-07 | Rohm And Haas Electronic Materials Llc | Patterned light extraction sheet and method of making same |
KR101317632B1 (ko) * | 2007-04-17 | 2013-10-10 | 엘지이노텍 주식회사 | 질화물계 발광 소자 및 그 제조방법 |
KR100736623B1 (ko) | 2006-05-08 | 2007-07-09 | 엘지전자 주식회사 | 수직형 발광 소자 및 그 제조방법 |
KR100780233B1 (ko) | 2006-05-15 | 2007-11-27 | 삼성전기주식회사 | 다중 패턴 구조를 지닌 반도체 발광 소자 |
KR100735470B1 (ko) * | 2006-05-19 | 2007-07-03 | 삼성전기주식회사 | 질화물계 반도체 발광소자의 제조방법 |
WO2007139894A2 (en) | 2006-05-26 | 2007-12-06 | Cree Led Lighting Solutions, Inc. | Solid state light emitting device and method of making same |
US8596819B2 (en) | 2006-05-31 | 2013-12-03 | Cree, Inc. | Lighting device and method of lighting |
KR100755591B1 (ko) * | 2006-06-22 | 2007-09-06 | 고려대학교 산학협력단 | 질화물계 발광소자의 제조방법 |
US20070295951A1 (en) * | 2006-06-26 | 2007-12-27 | Jen-Inn Chyi | Light-emitting diode incorporating an array of light extracting spots |
TWI309481B (en) | 2006-07-28 | 2009-05-01 | Epistar Corp | A light emitting device having a patterned substrate and the method thereof |
US20080030974A1 (en) * | 2006-08-02 | 2008-02-07 | Abu-Ageel Nayef M | LED-Based Illumination System |
US7674639B2 (en) * | 2006-08-14 | 2010-03-09 | Bridgelux, Inc | GaN based LED with etched exposed surface for improved light extraction efficiency and method for making the same |
SG140473A1 (en) * | 2006-08-16 | 2008-03-28 | Tinggi Tech Private Ltd | Improvements in external light efficiency of light emitting diodes |
CN101554089A (zh) | 2006-08-23 | 2009-10-07 | 科锐Led照明科技公司 | 照明装置和照明方法 |
SG140512A1 (en) * | 2006-09-04 | 2008-03-28 | Tinggi Tech Private Ltd | Electrical current distribution in light emitting devices |
KR100796522B1 (ko) * | 2006-09-05 | 2008-01-21 | 삼성전기주식회사 | 전자소자 내장형 인쇄회로기판의 제조방법 |
DE102006057747B4 (de) * | 2006-09-27 | 2015-10-15 | Osram Opto Semiconductors Gmbh | Halbleiterkörper und Halbleiterchip mit einem Halbleiterkörper |
DE102007004302A1 (de) * | 2006-09-29 | 2008-04-03 | Osram Opto Semiconductors Gmbh | Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips |
EP2070123A2 (en) | 2006-10-02 | 2009-06-17 | Illumitex, Inc. | Led system and method |
US9318327B2 (en) | 2006-11-28 | 2016-04-19 | Cree, Inc. | Semiconductor devices having low threading dislocations and improved light extraction and methods of making the same |
KR20080048318A (ko) * | 2006-11-28 | 2008-06-02 | 삼성전자주식회사 | 산란부를 구비하는 반도체 레이저 소자 및 그 제조방법 |
US9310026B2 (en) | 2006-12-04 | 2016-04-12 | Cree, Inc. | Lighting assembly and lighting method |
CN101622493A (zh) * | 2006-12-04 | 2010-01-06 | 科锐Led照明科技公司 | 照明装置和照明方法 |
KR100869962B1 (ko) * | 2006-12-07 | 2008-11-24 | 한국전자통신연구원 | 전류 확산층을 포함하는 발광소자의 제조방법 |
US8110838B2 (en) * | 2006-12-08 | 2012-02-07 | Luminus Devices, Inc. | Spatial localization of light-generating portions in LEDs |
JP5082752B2 (ja) | 2006-12-21 | 2012-11-28 | 日亜化学工業株式会社 | 半導体発光素子用基板の製造方法及びそれを用いた半導体発光素子 |
KR101506356B1 (ko) | 2007-01-22 | 2015-03-26 | 크리, 인코포레이티드 | 외부적으로 상호연결된 발광 장치의 어레이를 사용하는 조명 장치 및 그 제조 방법 |
TWI396297B (zh) * | 2007-01-24 | 2013-05-11 | Tera Xtal Technology Corp | 發光二極體結構及其製造方法 |
US8021904B2 (en) * | 2007-02-01 | 2011-09-20 | Cree, Inc. | Ohmic contacts to nitrogen polarity GaN |
JP5176334B2 (ja) * | 2007-02-01 | 2013-04-03 | 日亜化学工業株式会社 | 半導体発光素子 |
TWI321366B (en) | 2007-02-09 | 2010-03-01 | Huga Optotech Inc | Epi-structure with uneven multi-quantum well and the method thereof |
US20080197369A1 (en) * | 2007-02-20 | 2008-08-21 | Cree, Inc. | Double flip semiconductor device and method for fabrication |
EP2135302A2 (en) | 2007-03-08 | 2009-12-23 | Sensors For Medicine And Science, Inc. | Light emitting diode for harsh environments |
US8110425B2 (en) | 2007-03-20 | 2012-02-07 | Luminus Devices, Inc. | Laser liftoff structure and related methods |
US20080258130A1 (en) * | 2007-04-23 | 2008-10-23 | Bergmann Michael J | Beveled LED Chip with Transparent Substrate |
US20080283503A1 (en) * | 2007-05-14 | 2008-11-20 | Cheng-Yi Liu | Method of Processing Nature Pattern on Expitaxial Substrate |
KR101283261B1 (ko) * | 2007-05-21 | 2013-07-11 | 엘지이노텍 주식회사 | 발광 소자 및 그 제조방법 |
KR101393785B1 (ko) * | 2007-05-21 | 2014-05-13 | 엘지이노텍 주식회사 | 반도체 발광 소자 및 그 제조방법 |
DE102007028223A1 (de) * | 2007-06-20 | 2009-01-02 | Touchtek Corporation, Chunan | Leuchtdiode und Verfahren zu deren Herstellung |
WO2009002129A2 (en) * | 2007-06-27 | 2008-12-31 | Epivalley Co., Ltd. | Semiconductor light emitting device and method of manufacturing the same |
JP5493252B2 (ja) * | 2007-06-28 | 2014-05-14 | 日亜化学工業株式会社 | 半導体発光素子 |
US8179034B2 (en) | 2007-07-13 | 2012-05-15 | 3M Innovative Properties Company | Light extraction film for organic light emitting diode display and lighting devices |
JP5431320B2 (ja) | 2007-07-17 | 2014-03-05 | クリー インコーポレイテッド | 内部光学機能を備えた光学素子およびその製造方法 |
US7863635B2 (en) | 2007-08-07 | 2011-01-04 | Cree, Inc. | Semiconductor light emitting devices with applied wavelength conversion materials |
US8617997B2 (en) * | 2007-08-21 | 2013-12-31 | Cree, Inc. | Selective wet etching of gold-tin based solder |
US11114594B2 (en) * | 2007-08-24 | 2021-09-07 | Creeled, Inc. | Light emitting device packages using light scattering particles of different size |
KR20100077191A (ko) * | 2007-10-08 | 2010-07-07 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | 접합된 반도체 파장 변환기를 갖는 발광 다이오드 |
KR101361029B1 (ko) * | 2007-10-19 | 2014-02-12 | 삼성전자주식회사 | 질화물 반도체 소자 및 그 제조방법 |
US9634191B2 (en) | 2007-11-14 | 2017-04-25 | Cree, Inc. | Wire bond free wafer level LED |
US9461201B2 (en) | 2007-11-14 | 2016-10-04 | Cree, Inc. | Light emitting diode dielectric mirror |
US8575633B2 (en) * | 2008-12-08 | 2013-11-05 | Cree, Inc. | Light emitting diode with improved light extraction |
US8536584B2 (en) | 2007-11-14 | 2013-09-17 | Cree, Inc. | High voltage wire bond free LEDS |
US8368100B2 (en) * | 2007-11-14 | 2013-02-05 | Cree, Inc. | Semiconductor light emitting diodes having reflective structures and methods of fabricating same |
US7915629B2 (en) * | 2008-12-08 | 2011-03-29 | Cree, Inc. | Composite high reflectivity layer |
TWI401818B (zh) * | 2007-11-21 | 2013-07-11 | Univ Nat Cheng Kung | Surface plasmon resonance enhanced light emitting device and its preparation method |
JP5045418B2 (ja) * | 2007-11-28 | 2012-10-10 | 三菱化学株式会社 | GaN系LED素子、GaN系LED素子の製造方法およびGaN系LED素子製造用テンプレート |
EP2232591A4 (en) * | 2007-12-10 | 2013-12-25 | 3M Innovative Properties Co | FREQUENCY-REDUCED LIGHT EMITTING DIODE WITH SIMPLIFIED LIGHT EXTRACTION |
US9431589B2 (en) | 2007-12-14 | 2016-08-30 | Cree, Inc. | Textured encapsulant surface in LED packages |
KR100947676B1 (ko) * | 2007-12-17 | 2010-03-16 | 주식회사 에피밸리 | 3족 질화물 반도체 발광소자 |
TW200929593A (en) * | 2007-12-20 | 2009-07-01 | Nat Univ Tsing Hua | Light source with reflective pattern structure |
US20090166654A1 (en) * | 2007-12-31 | 2009-07-02 | Zhiyin Gan | Light-emitting diode with increased light efficiency |
CN102163667B (zh) * | 2008-01-14 | 2014-04-16 | 晶元光电股份有限公司 | 半导体发光结构 |
US7829358B2 (en) | 2008-02-08 | 2010-11-09 | Illumitex, Inc. | System and method for emitter layer shaping |
DE102008015551A1 (de) * | 2008-03-25 | 2009-10-01 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement mit planarer Kontaktierung und Verfahren zu dessen Herstellung |
US8471239B2 (en) * | 2008-04-25 | 2013-06-25 | Lg Innotek Co., Ltd. | Light-emitting element and a production method therefor |
US8664747B2 (en) * | 2008-04-28 | 2014-03-04 | Toshiba Techno Center Inc. | Trenched substrate for crystal growth and wafer bonding |
US8395168B2 (en) * | 2008-06-06 | 2013-03-12 | Hong Kong Applied Science And Technology Research Institute Co. Ltd. | Semiconductor wafers and semiconductor devices with polishing stops and method of making the same |
US20100200880A1 (en) * | 2008-06-06 | 2010-08-12 | Hong Kong Applied Science And Technology Research Institute Co. Ltd. | Semiconductor wafers and semiconductor devices and methods of making semiconductor wafers and devices |
US20090311381A1 (en) * | 2008-06-11 | 2009-12-17 | Gardner Susanne | Beverages composed of wine components |
TWI420693B (zh) * | 2008-07-17 | 2013-12-21 | Advanced Optoelectronic Tech | 發光二極體及其製程 |
TW201005997A (en) * | 2008-07-24 | 2010-02-01 | Advanced Optoelectronic Tech | Rough structure of optoeletronics device and fabrication thereof |
US8384115B2 (en) * | 2008-08-01 | 2013-02-26 | Cree, Inc. | Bond pad design for enhancing light extraction from LED chips |
JP2008277871A (ja) * | 2008-08-22 | 2008-11-13 | Showa Denko Kk | Ledランプ |
US7825427B2 (en) * | 2008-09-12 | 2010-11-02 | Bridgelux, Inc. | Method and apparatus for generating phosphor film with textured surface |
EP2164302A1 (de) | 2008-09-12 | 2010-03-17 | Ilford Imaging Switzerland Gmbh | Optisches Element und Verfahren zu seiner Herstellung |
US9070827B2 (en) | 2010-10-29 | 2015-06-30 | Epistar Corporation | Optoelectronic device and method for manufacturing the same |
JP5282503B2 (ja) * | 2008-09-19 | 2013-09-04 | 日亜化学工業株式会社 | 半導体発光素子 |
KR101009651B1 (ko) * | 2008-10-15 | 2011-01-19 | 박은현 | 3족 질화물 반도체 발광소자 |
US20100102352A1 (en) * | 2008-10-24 | 2010-04-29 | Epivalley Co., Ltd. | III-Nitride Semiconductor Light Emitting Device |
US9051177B2 (en) * | 2008-10-27 | 2015-06-09 | The United States Of America As Represented By The Secretary Of The Army | Active optical limiting semiconductor device and method with active region transparent to light becoming opaque when not biased |
US20100110551A1 (en) * | 2008-10-31 | 2010-05-06 | 3M Innovative Properties Company | Light extraction film with high index backfill layer and passivation layer |
KR101007113B1 (ko) * | 2008-11-25 | 2011-01-10 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
KR101064016B1 (ko) * | 2008-11-26 | 2011-09-08 | 엘지이노텍 주식회사 | 발광 소자 및 그 제조방법 |
KR101047718B1 (ko) | 2008-11-26 | 2011-07-08 | 엘지이노텍 주식회사 | 발광 소자 |
US8017963B2 (en) * | 2008-12-08 | 2011-09-13 | Cree, Inc. | Light emitting diode with a dielectric mirror having a lateral configuration |
TW201034256A (en) | 2008-12-11 | 2010-09-16 | Illumitex Inc | Systems and methods for packaging light-emitting diode devices |
US7957621B2 (en) | 2008-12-17 | 2011-06-07 | 3M Innovative Properties Company | Light extraction film with nanoparticle coatings |
WO2010090862A2 (en) * | 2009-01-21 | 2010-08-12 | Abu-Ageel Nayef M | Illumination system utilizing wavelength conversion materials and light recycling |
KR101097878B1 (ko) | 2009-02-11 | 2011-12-23 | 전북대학교산학협력단 | 질화물계 반도체 발광 소자의 제조 방법 |
KR101134810B1 (ko) | 2009-03-03 | 2012-04-13 | 엘지이노텍 주식회사 | 발광소자 및 그 제조방법 |
DE102009020127A1 (de) * | 2009-03-25 | 2010-09-30 | Osram Opto Semiconductors Gmbh | Leuchtdiode |
US8704257B2 (en) * | 2009-03-31 | 2014-04-22 | Epistar Corporation | Light-emitting element and the manufacturing method thereof |
US9093293B2 (en) | 2009-04-06 | 2015-07-28 | Cree, Inc. | High voltage low current surface emitting light emitting diode |
US8529102B2 (en) * | 2009-04-06 | 2013-09-10 | Cree, Inc. | Reflector system for lighting device |
US8476668B2 (en) * | 2009-04-06 | 2013-07-02 | Cree, Inc. | High voltage low current surface emitting LED |
KR101092063B1 (ko) * | 2009-04-28 | 2011-12-12 | 엘지이노텍 주식회사 | 발광소자 패키지 및 그 제조방법 |
US8741715B2 (en) * | 2009-04-29 | 2014-06-03 | Cree, Inc. | Gate electrodes for millimeter-wave operation and methods of fabrication |
CN102460741A (zh) | 2009-05-05 | 2012-05-16 | 3M创新有限公司 | 具有增大的提取效率的再发光半导体构造 |
KR101047617B1 (ko) * | 2009-05-21 | 2011-07-07 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
DE102009023351A1 (de) | 2009-05-29 | 2010-12-02 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips |
US8921876B2 (en) | 2009-06-02 | 2014-12-30 | Cree, Inc. | Lighting devices with discrete lumiphor-bearing regions within or on a surface of remote elements |
US8207547B2 (en) | 2009-06-10 | 2012-06-26 | Brudgelux, Inc. | Thin-film LED with P and N contacts electrically isolated from the substrate |
US20100327300A1 (en) * | 2009-06-25 | 2010-12-30 | Koninklijke Philips Electronics N.V. | Contact for a semiconductor light emitting device |
KR20110018563A (ko) * | 2009-08-18 | 2011-02-24 | 우리엘에스티 주식회사 | 3족 질화물 반도체 발광소자 및 그 제조 방법 |
US8585253B2 (en) | 2009-08-20 | 2013-11-19 | Illumitex, Inc. | System and method for color mixing lens array |
US8449128B2 (en) | 2009-08-20 | 2013-05-28 | Illumitex, Inc. | System and method for a lens and phosphor layer |
TWI405409B (zh) * | 2009-08-27 | 2013-08-11 | Novatek Microelectronics Corp | 低電壓差動訊號輸出級 |
US9362459B2 (en) * | 2009-09-02 | 2016-06-07 | United States Department Of Energy | High reflectivity mirrors and method for making same |
CN102630288B (zh) | 2009-09-25 | 2015-09-09 | 科锐公司 | 具有低眩光和高亮度级均匀性的照明设备 |
KR101096301B1 (ko) | 2009-10-26 | 2011-12-20 | 고려대학교 산학협력단 | 발광다이오드 및 그 제조방법 |
US9435493B2 (en) | 2009-10-27 | 2016-09-06 | Cree, Inc. | Hybrid reflector system for lighting device |
US8525221B2 (en) * | 2009-11-25 | 2013-09-03 | Toshiba Techno Center, Inc. | LED with improved injection efficiency |
JP2010056564A (ja) * | 2009-11-27 | 2010-03-11 | Showa Denko Kk | 発光素子の製造方法及び発光素子 |
JP2010045418A (ja) * | 2009-11-27 | 2010-02-25 | Showa Denko Kk | 発光素子の製造方法 |
TWI415300B (zh) * | 2009-12-24 | 2013-11-11 | Hk Applied Science & Tech Res | 半導體晶圓及半導體裝置及製造半導體晶圓及裝置之方法 |
KR100993074B1 (ko) | 2009-12-29 | 2010-11-08 | 엘지이노텍 주식회사 | 발광소자, 발광소자의 제조방법 및 발광소자 패키지 |
TWI502768B (zh) * | 2009-12-31 | 2015-10-01 | Epistar Corp | 光電半導體裝置及其製造方法 |
KR101028251B1 (ko) * | 2010-01-19 | 2011-04-11 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
KR101102998B1 (ko) * | 2010-02-03 | 2012-01-05 | 정명영 | 발광다이오드 칩 |
US8783915B2 (en) | 2010-02-11 | 2014-07-22 | Bridgelux, Inc. | Surface-textured encapsulations for use with light emitting diodes |
US9275979B2 (en) | 2010-03-03 | 2016-03-01 | Cree, Inc. | Enhanced color rendering index emitter through phosphor separation |
KR101683095B1 (ko) * | 2010-03-09 | 2016-12-06 | 유로피안 나노 인베스트 아베 | 고효율 나노구조 광전지 소자 제조 |
US8642368B2 (en) * | 2010-03-12 | 2014-02-04 | Applied Materials, Inc. | Enhancement of LED light extraction with in-situ surface roughening |
JP2010135856A (ja) * | 2010-03-16 | 2010-06-17 | Showa Denko Kk | 発光素子の製造方法及び発光素子 |
JP2010147505A (ja) * | 2010-03-16 | 2010-07-01 | Showa Denko Kk | 発光素子の製造方法及び発光素子 |
JP2010135855A (ja) * | 2010-03-16 | 2010-06-17 | Showa Denko Kk | 発光素子の製造方法及び発光素子 |
WO2011125311A1 (ja) * | 2010-04-01 | 2011-10-13 | パナソニック株式会社 | 発光ダイオード素子および発光ダイオード装置 |
US9105824B2 (en) | 2010-04-09 | 2015-08-11 | Cree, Inc. | High reflective board or substrate for LEDs |
CN102222748B (zh) * | 2010-04-16 | 2014-07-16 | 清华大学 | 发光二极管 |
US8329482B2 (en) | 2010-04-30 | 2012-12-11 | Cree, Inc. | White-emitting LED chips and method for making same |
CN101859860B (zh) * | 2010-05-04 | 2013-04-10 | 厦门市三安光电科技有限公司 | 具有双反射层的铝镓铟磷系发光二极管的制备方法 |
KR101101858B1 (ko) * | 2010-05-27 | 2012-01-05 | 고려대학교 산학협력단 | 반도체 발광소자 및 그 제조방법 |
US9389408B2 (en) | 2010-07-23 | 2016-07-12 | Zeta Instruments, Inc. | 3D microscope and methods of measuring patterned substrates |
US20120018755A1 (en) * | 2010-07-23 | 2012-01-26 | The Regents Of The University Of California | Light emitting devices with embedded void-gap structures through bonding of structured materials on active devices |
US8764224B2 (en) | 2010-08-12 | 2014-07-01 | Cree, Inc. | Luminaire with distributed LED sources |
WO2012026695A2 (en) * | 2010-08-27 | 2012-03-01 | Seoul Opto Device Co., Ltd. | Light emitting diode with improved luminous efficiency |
US8198109B2 (en) | 2010-08-27 | 2012-06-12 | Quarkstar Llc | Manufacturing methods for solid state light sheet or strip with LEDs connected in series for general illumination |
US8980730B1 (en) * | 2010-09-14 | 2015-03-17 | Stc.Unm | Selective nanoscale growth of lattice mismatched materials |
TWI501421B (zh) * | 2010-09-21 | 2015-09-21 | Epistar Corp | 光電元件及其製造方法 |
KR101259482B1 (ko) * | 2010-09-24 | 2013-05-06 | 서울옵토디바이스주식회사 | 고효율 발광다이오드 |
US9070851B2 (en) | 2010-09-24 | 2015-06-30 | Seoul Semiconductor Co., Ltd. | Wafer-level light emitting diode package and method of fabricating the same |
CN102130251B (zh) * | 2010-09-28 | 2014-09-03 | 映瑞光电科技(上海)有限公司 | 发光二极管及其制造方法 |
US9293653B2 (en) * | 2010-10-08 | 2016-03-22 | Guardian Industries Corp. | Light source with light scattering features, device including light source with light scattering features, and/or methods of making the same |
US8455882B2 (en) | 2010-10-15 | 2013-06-04 | Cree, Inc. | High efficiency LEDs |
JP5625725B2 (ja) * | 2010-10-18 | 2014-11-19 | 豊田合成株式会社 | 窒化ガリウム系化合物半導体発光素子 |
KR20120040448A (ko) * | 2010-10-19 | 2012-04-27 | 삼성엘이디 주식회사 | 수직형 발광 소자 |
US8192051B2 (en) | 2010-11-01 | 2012-06-05 | Quarkstar Llc | Bidirectional LED light sheet |
CN103222076B (zh) | 2010-11-18 | 2017-10-27 | 3M创新有限公司 | 包含聚硅氮烷接合层的发光二极管部件 |
KR101274651B1 (ko) | 2010-11-30 | 2013-06-12 | 엘지디스플레이 주식회사 | 발광 다이오드 및 이의 제조 방법 |
JP5589812B2 (ja) | 2010-12-06 | 2014-09-17 | 豊田合成株式会社 | 半導体発光素子 |
US8556469B2 (en) | 2010-12-06 | 2013-10-15 | Cree, Inc. | High efficiency total internal reflection optic for solid state lighting luminaires |
JPWO2012093601A1 (ja) * | 2011-01-07 | 2014-06-09 | 三菱化学株式会社 | エピタキシャル成長用基板およびGaN系LEDデバイス |
US11251164B2 (en) | 2011-02-16 | 2022-02-15 | Creeled, Inc. | Multi-layer conversion material for down conversion in solid state lighting |
US8410726B2 (en) | 2011-02-22 | 2013-04-02 | Quarkstar Llc | Solid state lamp using modular light emitting elements |
US8314566B2 (en) | 2011-02-22 | 2012-11-20 | Quarkstar Llc | Solid state lamp using light emitting strips |
DE102011012928A1 (de) | 2011-03-03 | 2012-09-06 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Dünnfilm-Halbleiterkörpers und Dünnfilm-Halbleiterkörper |
US8680556B2 (en) | 2011-03-24 | 2014-03-25 | Cree, Inc. | Composite high reflectivity layer |
KR20120116231A (ko) * | 2011-04-12 | 2012-10-22 | (주)버티클 | 반도체 소자 및 그 제조 방법 |
US9245874B2 (en) | 2011-04-18 | 2016-01-26 | Cree, Inc. | LED array having embedded LED and method therefor |
TWI470829B (zh) * | 2011-04-27 | 2015-01-21 | Sino American Silicon Prod Inc | 磊晶基板的製作方法、發光二極體,及其製作方法 |
TWI429030B (zh) * | 2011-05-16 | 2014-03-01 | Sino American Silicon Prod Inc | 發光二極體基板與發光二極體 |
TWI438932B (zh) * | 2011-05-27 | 2014-05-21 | Nat Univ Tsing Hua | 準直性發光元件與其製造方法 |
TW201351696A (zh) * | 2011-05-31 | 2013-12-16 | Aceplux Optotech Inc | 高光取出率發光二極體的製作方法 |
CN102820386B (zh) * | 2011-06-11 | 2017-01-25 | 昆山中辰矽晶有限公司 | 磊晶基板的制造方法、发光二极体及其制造方法 |
US9142741B2 (en) | 2011-06-15 | 2015-09-22 | Sensor Electronic Technology, Inc. | Emitting device with improved extraction |
US9741899B2 (en) | 2011-06-15 | 2017-08-22 | Sensor Electronic Technology, Inc. | Device with inverted large scale light extraction structures |
JP2014517544A (ja) | 2011-06-15 | 2014-07-17 | センサー エレクトロニック テクノロジー インコーポレイテッド | 大型の逆さ光取り出し構造付の装置 |
US10319881B2 (en) | 2011-06-15 | 2019-06-11 | Sensor Electronic Technology, Inc. | Device including transparent layer with profiled surface for improved extraction |
US10522714B2 (en) | 2011-06-15 | 2019-12-31 | Sensor Electronic Technology, Inc. | Device with inverted large scale light extraction structures |
US9337387B2 (en) | 2011-06-15 | 2016-05-10 | Sensor Electronic Technology, Inc. | Emitting device with improved extraction |
US10170668B2 (en) | 2011-06-21 | 2019-01-01 | Micron Technology, Inc. | Solid state lighting devices with improved current spreading and light extraction and associated methods |
US9728676B2 (en) | 2011-06-24 | 2017-08-08 | Cree, Inc. | High voltage monolithic LED chip |
US10243121B2 (en) | 2011-06-24 | 2019-03-26 | Cree, Inc. | High voltage monolithic LED chip with improved reliability |
US8686429B2 (en) | 2011-06-24 | 2014-04-01 | Cree, Inc. | LED structure with enhanced mirror reflectivity |
US8395165B2 (en) | 2011-07-08 | 2013-03-12 | Bridelux, Inc. | Laterally contacted blue LED with superlattice current spreading layer |
US20130026480A1 (en) | 2011-07-25 | 2013-01-31 | Bridgelux, Inc. | Nucleation of Aluminum Nitride on a Silicon Substrate Using an Ammonia Preflow |
CN103563483A (zh) * | 2011-07-27 | 2014-02-05 | 松下电器产业株式会社 | 有机电致发光元件及其制造方法 |
US8916906B2 (en) | 2011-07-29 | 2014-12-23 | Kabushiki Kaisha Toshiba | Boron-containing buffer layer for growing gallium nitride on silicon |
US9012939B2 (en) | 2011-08-02 | 2015-04-21 | Kabushiki Kaisha Toshiba | N-type gallium-nitride layer having multiple conductive intervening layers |
US9343641B2 (en) | 2011-08-02 | 2016-05-17 | Manutius Ip, Inc. | Non-reactive barrier metal for eutectic bonding process |
US9142743B2 (en) | 2011-08-02 | 2015-09-22 | Kabushiki Kaisha Toshiba | High temperature gold-free wafer bonding for light emitting diodes |
US8865565B2 (en) | 2011-08-02 | 2014-10-21 | Kabushiki Kaisha Toshiba | LED having a low defect N-type layer that has grown on a silicon substrate |
US20130032810A1 (en) | 2011-08-03 | 2013-02-07 | Bridgelux, Inc. | Led on silicon substrate using zinc-sulfide as buffer layer |
US8564010B2 (en) | 2011-08-04 | 2013-10-22 | Toshiba Techno Center Inc. | Distributed current blocking structures for light emitting diodes |
US8624482B2 (en) | 2011-09-01 | 2014-01-07 | Toshiba Techno Center Inc. | Distributed bragg reflector for reflecting light of multiple wavelengths from an LED |
US8669585B1 (en) | 2011-09-03 | 2014-03-11 | Toshiba Techno Center Inc. | LED that has bounding silicon-doped regions on either side of a strain release layer |
US10032956B2 (en) | 2011-09-06 | 2018-07-24 | Sensor Electronic Technology, Inc. | Patterned substrate design for layer growth |
US9324560B2 (en) | 2011-09-06 | 2016-04-26 | Sensor Electronic Technology, Inc. | Patterned substrate design for layer growth |
US8558247B2 (en) | 2011-09-06 | 2013-10-15 | Toshiba Techno Center Inc. | GaN LEDs with improved area and method for making the same |
CA2883101A1 (en) | 2011-09-06 | 2013-03-14 | Trilogy Environmental Systems Inc. | Hybrid desalination system |
US8686430B2 (en) | 2011-09-07 | 2014-04-01 | Toshiba Techno Center Inc. | Buffer layer for GaN-on-Si LED |
US8853668B2 (en) | 2011-09-29 | 2014-10-07 | Kabushiki Kaisha Toshiba | Light emitting regions for use with light emitting devices |
US8698163B2 (en) | 2011-09-29 | 2014-04-15 | Toshiba Techno Center Inc. | P-type doping layers for use with light emitting devices |
US20130082274A1 (en) | 2011-09-29 | 2013-04-04 | Bridgelux, Inc. | Light emitting devices having dislocation density maintaining buffer layers |
US9012921B2 (en) | 2011-09-29 | 2015-04-21 | Kabushiki Kaisha Toshiba | Light emitting devices having light coupling layers |
US9178114B2 (en) | 2011-09-29 | 2015-11-03 | Manutius Ip, Inc. | P-type doping layers for use with light emitting devices |
US8664679B2 (en) | 2011-09-29 | 2014-03-04 | Toshiba Techno Center Inc. | Light emitting devices having light coupling layers with recessed electrodes |
KR20130035658A (ko) * | 2011-09-30 | 2013-04-09 | 서울옵토디바이스주식회사 | 발광 다이오드 소자용 기판 제조 방법 |
US8957440B2 (en) | 2011-10-04 | 2015-02-17 | Cree, Inc. | Light emitting devices with low packaging factor |
US8552465B2 (en) | 2011-11-09 | 2013-10-08 | Toshiba Techno Center Inc. | Method for reducing stress in epitaxial growth |
US8581267B2 (en) | 2011-11-09 | 2013-11-12 | Toshiba Techno Center Inc. | Series connected segmented LED |
US8349116B1 (en) | 2011-11-18 | 2013-01-08 | LuxVue Technology Corporation | Micro device transfer head heater assembly and method of transferring a micro device |
US8426227B1 (en) | 2011-11-18 | 2013-04-23 | LuxVue Technology Corporation | Method of forming a micro light emitting diode array |
US8573469B2 (en) | 2011-11-18 | 2013-11-05 | LuxVue Technology Corporation | Method of forming a micro LED structure and array of micro LED structures with an electrically insulating layer |
JP6100275B2 (ja) * | 2011-11-18 | 2017-03-22 | アップル インコーポレイテッド | 電気的絶縁層を持つマイクロled構造体及びマイクロled構造体のアレイの形成方法 |
US8333860B1 (en) | 2011-11-18 | 2012-12-18 | LuxVue Technology Corporation | Method of transferring a micro device |
CN103137812B (zh) * | 2011-12-03 | 2015-11-25 | 清华大学 | 发光二极管 |
CN103137816B (zh) * | 2011-12-03 | 2015-09-30 | 清华大学 | 发光二极管 |
CN103137803B (zh) * | 2011-12-03 | 2015-08-26 | 清华大学 | 发光二极管 |
CN103137804B (zh) | 2011-12-03 | 2015-09-30 | 清华大学 | 发光二极管 |
CN104011886B (zh) | 2011-12-23 | 2017-03-08 | 首尔伟傲世有限公司 | 发光二极管及其制造方法 |
FR2985609B1 (fr) * | 2012-01-05 | 2014-02-07 | Commissariat Energie Atomique | Substrat structure pour leds a forte extraction de lumiere |
JP5606465B2 (ja) * | 2012-02-01 | 2014-10-15 | 株式会社東芝 | 半導体発光素子及びその製造方法 |
WO2013116631A1 (en) | 2012-02-02 | 2013-08-08 | The Procter & Gamble Company | Light emitting laminate and method of making thereof |
US9458973B2 (en) | 2012-02-16 | 2016-10-04 | Koninklijke Philips N.V. | Optical element for uniform lighting |
TWI484663B (zh) * | 2012-03-14 | 2015-05-11 | Genesis Photonics Inc | 半導體發光元件及其製作方法 |
KR102116152B1 (ko) * | 2012-03-19 | 2020-05-28 | 루미리즈 홀딩 비.브이. | 실리콘 기판 상에서 성장하는 발광 장치 |
TWI523269B (zh) * | 2012-03-30 | 2016-02-21 | 晶元光電股份有限公司 | 發光元件 |
CN103367595B (zh) * | 2012-03-30 | 2016-02-10 | 展晶科技(深圳)有限公司 | 发光二极管晶粒及其制造方法 |
TWI528579B (zh) | 2012-04-18 | 2016-04-01 | 新世紀光電股份有限公司 | 發光二極體元件 |
TW201347231A (zh) | 2012-05-04 | 2013-11-16 | Lextar Electronics Corp | 發光二極體元件 |
JP2012169667A (ja) * | 2012-05-11 | 2012-09-06 | Toshiba Corp | 半導体発光素子及びその製造方法 |
KR101346803B1 (ko) * | 2012-05-15 | 2014-01-03 | 포항공과대학교 산학협력단 | 발광 다이오드 소자 및 그의 제조 방법 |
US11792898B2 (en) | 2012-07-01 | 2023-10-17 | Ideal Industries Lighting Llc | Enhanced fixtures for area lighting |
US11160148B2 (en) | 2017-06-13 | 2021-10-26 | Ideal Industries Lighting Llc | Adaptive area lamp |
CN103682005B (zh) * | 2012-09-12 | 2016-12-07 | 顾玉奎 | Led磊晶制程 |
US8814376B2 (en) | 2012-09-26 | 2014-08-26 | Apogee Translite, Inc. | Lighting devices |
US9000414B2 (en) * | 2012-11-16 | 2015-04-07 | Korea Photonics Technology Institute | Light emitting diode having heterogeneous protrusion structures |
US8896008B2 (en) | 2013-04-23 | 2014-11-25 | Cree, Inc. | Light emitting diodes having group III nitride surface features defined by a mask and crystal planes |
CN110246946B (zh) | 2013-06-04 | 2023-04-21 | 科锐Led公司 | 发光二极管介质镜 |
TWI626395B (zh) | 2013-06-11 | 2018-06-11 | 晶元光電股份有限公司 | 發光裝置 |
KR102075644B1 (ko) | 2013-06-14 | 2020-02-10 | 엘지이노텍 주식회사 | 발광소자 및 조명시스템 |
CN104241262B (zh) | 2013-06-14 | 2020-11-06 | 惠州科锐半导体照明有限公司 | 发光装置以及显示装置 |
US11255497B2 (en) | 2013-07-05 | 2022-02-22 | DMF, Inc. | Adjustable electrical apparatus with hangar bars for installation in a building |
US10753558B2 (en) | 2013-07-05 | 2020-08-25 | DMF, Inc. | Lighting apparatus and methods |
US10551044B2 (en) | 2015-11-16 | 2020-02-04 | DMF, Inc. | Recessed lighting assembly |
US11060705B1 (en) | 2013-07-05 | 2021-07-13 | DMF, Inc. | Compact lighting apparatus with AC to DC converter and integrated electrical connector |
US10139059B2 (en) | 2014-02-18 | 2018-11-27 | DMF, Inc. | Adjustable compact recessed lighting assembly with hangar bars |
US10563850B2 (en) | 2015-04-22 | 2020-02-18 | DMF, Inc. | Outer casing for a recessed lighting fixture |
US11435064B1 (en) | 2013-07-05 | 2022-09-06 | DMF, Inc. | Integrated lighting module |
US9964266B2 (en) | 2013-07-05 | 2018-05-08 | DMF, Inc. | Unified driver and light source assembly for recessed lighting |
JP6248786B2 (ja) * | 2014-04-25 | 2017-12-20 | 日亜化学工業株式会社 | 窒化物半導体素子およびその製造方法 |
US9548419B2 (en) | 2014-05-20 | 2017-01-17 | Southern Taiwan University Of Science And Technology | Light emitting diode chip having multi microstructure substrate surface |
EP3149781B1 (en) * | 2014-05-30 | 2020-09-30 | Lumileds Holding B.V. | Light-emitting device with patterned substrate |
KR102199995B1 (ko) * | 2014-06-02 | 2021-01-11 | 엘지이노텍 주식회사 | 발광소자 |
JP6617401B2 (ja) * | 2014-09-30 | 2019-12-11 | 日亜化学工業株式会社 | 半導体発光素子 |
USD826871S1 (en) | 2014-12-11 | 2018-08-28 | Cree, Inc. | Light emitting diode device |
US10658546B2 (en) | 2015-01-21 | 2020-05-19 | Cree, Inc. | High efficiency LEDs and methods of manufacturing |
USD777122S1 (en) | 2015-02-27 | 2017-01-24 | Cree, Inc. | LED package |
CA2931588C (en) | 2015-05-29 | 2021-09-14 | DMF, Inc. | Lighting module for recessed lighting systems |
USD783547S1 (en) | 2015-06-04 | 2017-04-11 | Cree, Inc. | LED package |
KR102382440B1 (ko) | 2015-06-22 | 2022-04-05 | 삼성전자주식회사 | 반도체 발광소자 |
FR3038451B1 (fr) * | 2015-06-30 | 2017-07-21 | Commissariat Energie Atomique | Dispositif electroluminescent. |
KR102393374B1 (ko) | 2015-08-31 | 2022-05-03 | 삼성디스플레이 주식회사 | 표시 장치 및 상기 표시 장치의 제조 방법 |
EP3357097B1 (en) | 2015-10-01 | 2020-12-16 | Cree, Inc. | Low optical loss flip chip solid state lighting device |
USD851046S1 (en) | 2015-10-05 | 2019-06-11 | DMF, Inc. | Electrical Junction Box |
WO2017127461A1 (en) | 2016-01-18 | 2017-07-27 | Sensor Electronic Technology, Inc. | Semiconductor device with improved light propagation |
CN205944139U (zh) | 2016-03-30 | 2017-02-08 | 首尔伟傲世有限公司 | 紫外线发光二极管封装件以及包含此的发光二极管模块 |
US10529696B2 (en) | 2016-04-12 | 2020-01-07 | Cree, Inc. | High density pixelated LED and devices and methods thereof |
KR102608419B1 (ko) | 2016-07-12 | 2023-12-01 | 삼성디스플레이 주식회사 | 표시장치 및 표시장치의 제조방법 |
US10770440B2 (en) * | 2017-03-15 | 2020-09-08 | Globalfoundries Inc. | Micro-LED display assembly |
CN106992231B (zh) * | 2017-04-06 | 2019-05-21 | 厦门三安光电有限公司 | 氮化物半导体元件及其制作方法 |
US10488000B2 (en) | 2017-06-22 | 2019-11-26 | DMF, Inc. | Thin profile surface mount lighting apparatus |
USD905327S1 (en) | 2018-05-17 | 2020-12-15 | DMF, Inc. | Light fixture |
WO2018237294A2 (en) | 2017-06-22 | 2018-12-27 | DMF, Inc. | THIN-PROFILE SURFACE MOUNTING LIGHTING DEVICE |
JP6719424B2 (ja) | 2017-06-26 | 2020-07-08 | 日機装株式会社 | 半導体発光素子および半導体発光素子の製造方法 |
JP7290001B2 (ja) | 2017-08-03 | 2023-06-13 | クリーエルイーディー・インコーポレーテッド | 高密度ピクセル化ledチップ、チップアレイデバイス、及びその製造方法 |
US10734363B2 (en) | 2017-08-03 | 2020-08-04 | Cree, Inc. | High density pixelated-LED chips and chip array devices |
US11067231B2 (en) | 2017-08-28 | 2021-07-20 | DMF, Inc. | Alternate junction box and arrangement for lighting apparatus |
WO2019108667A1 (en) | 2017-11-28 | 2019-06-06 | Dmf. Inc. | Adjustable hanger bar assembly |
US11961875B2 (en) | 2017-12-20 | 2024-04-16 | Lumileds Llc | Monolithic segmented LED array architecture with islanded epitaxial growth |
US10879431B2 (en) | 2017-12-22 | 2020-12-29 | Lumileds Llc | Wavelength converting layer patterning for LED arrays |
WO2019133669A1 (en) | 2017-12-27 | 2019-07-04 | DMF, Inc. | Methods and apparatus for adjusting a luminaire |
US20190237629A1 (en) | 2018-01-26 | 2019-08-01 | Lumileds Llc | Optically transparent adhesion layer to connect noble metals to oxides |
US11387389B2 (en) | 2018-01-29 | 2022-07-12 | Creeled, Inc. | Reflective layers for light-emitting diodes |
US11031527B2 (en) | 2018-01-29 | 2021-06-08 | Creeled, Inc. | Reflective layers for light-emitting diodes |
US11923481B2 (en) | 2018-01-29 | 2024-03-05 | Creeled, Inc. | Reflective layers for light-emitting diodes |
US10529773B2 (en) | 2018-02-14 | 2020-01-07 | Cree, Inc. | Solid state lighting devices with opposing emission directions |
USD877957S1 (en) | 2018-05-24 | 2020-03-10 | DMF Inc. | Light fixture |
WO2019241198A1 (en) | 2018-06-11 | 2019-12-19 | DMF, Inc. | A polymer housing for a recessed lighting system and methods for using same |
USD903605S1 (en) | 2018-06-12 | 2020-12-01 | DMF, Inc. | Plastic deep electrical junction box |
JP7436371B2 (ja) | 2018-07-09 | 2024-02-21 | ソウル バイオシス カンパニー リミテッド | 発光装置 |
DE102018119622A1 (de) * | 2018-08-13 | 2020-02-13 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips |
US11271033B2 (en) | 2018-09-27 | 2022-03-08 | Lumileds Llc | Micro light emitting devices |
US10923628B2 (en) | 2018-09-27 | 2021-02-16 | Lumileds Llc | Micrometer scale light emitting diode displays on patterned templates and substrates |
US10811460B2 (en) | 2018-09-27 | 2020-10-20 | Lumileds Holding B.V. | Micrometer scale light emitting diode displays on patterned templates and substrates |
US10964845B2 (en) | 2018-09-27 | 2021-03-30 | Lumileds Llc | Micro light emitting devices |
CA3115146A1 (en) | 2018-10-02 | 2020-04-09 | Ver Lighting Llc | A bar hanger assembly with mating telescoping bars |
US10879441B2 (en) | 2018-12-17 | 2020-12-29 | Cree, Inc. | Interconnects for light emitting diode chips |
US10903265B2 (en) | 2018-12-21 | 2021-01-26 | Cree, Inc. | Pixelated-LED chips and chip array devices, and fabrication methods |
USD901398S1 (en) | 2019-01-29 | 2020-11-10 | DMF, Inc. | Plastic deep electrical junction box |
USD864877S1 (en) | 2019-01-29 | 2019-10-29 | DMF, Inc. | Plastic deep electrical junction box with a lighting module mounting yoke |
USD1012864S1 (en) | 2019-01-29 | 2024-01-30 | DMF, Inc. | Portion of a plastic deep electrical junction box |
US11251406B2 (en) * | 2019-03-07 | 2022-02-15 | Vitro Flat Glass Llc | Borosilicate light extraction region |
USD966877S1 (en) | 2019-03-14 | 2022-10-18 | Ver Lighting Llc | Hanger bar for a hanger bar assembly |
US10985294B2 (en) | 2019-03-19 | 2021-04-20 | Creeled, Inc. | Contact structures for light emitting diode chips |
DE102019112762A1 (de) * | 2019-05-15 | 2020-11-19 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Bauelement mit vergrabenen dotierten bereichen und verfahren zur herstellung eines bauelements |
US11094848B2 (en) | 2019-08-16 | 2021-08-17 | Creeled, Inc. | Light-emitting diode chip structures |
CA3154491A1 (en) | 2019-09-12 | 2021-03-18 | DMF, Inc. | Miniature lighting module and lighting fixtures using same |
US11817526B2 (en) | 2019-10-29 | 2023-11-14 | Creeled, Inc. | Texturing for high density pixelated-LED chips and chip array devices |
US11674795B2 (en) | 2019-12-18 | 2023-06-13 | Lumileds Llc | Miniature pattern projector using microLEDs and micro-optics |
US11923398B2 (en) | 2019-12-23 | 2024-03-05 | Lumileds Llc | III-nitride multi-wavelength LED arrays |
US11404473B2 (en) | 2019-12-23 | 2022-08-02 | Lumileds Llc | III-nitride multi-wavelength LED arrays |
US11569415B2 (en) | 2020-03-11 | 2023-01-31 | Lumileds Llc | Light emitting diode devices with defined hard mask opening |
US11735695B2 (en) | 2020-03-11 | 2023-08-22 | Lumileds Llc | Light emitting diode devices with current spreading layer |
US11848402B2 (en) | 2020-03-11 | 2023-12-19 | Lumileds Llc | Light emitting diode devices with multilayer composite film including current spreading layer |
US11942507B2 (en) | 2020-03-11 | 2024-03-26 | Lumileds Llc | Light emitting diode devices |
US11592166B2 (en) | 2020-05-12 | 2023-02-28 | Feit Electric Company, Inc. | Light emitting device having improved illumination and manufacturing flexibility |
CA3124976A1 (en) | 2020-07-17 | 2022-01-17 | DMF, Inc. | Polymer housing for a lighting system and methods for using same |
USD990030S1 (en) | 2020-07-17 | 2023-06-20 | DMF, Inc. | Housing for a lighting system |
CA3125954A1 (en) | 2020-07-23 | 2022-01-23 | DMF, Inc. | Lighting module having field-replaceable optics, improved cooling, and tool-less mounting features |
US11876042B2 (en) | 2020-08-03 | 2024-01-16 | Feit Electric Company, Inc. | Omnidirectional flexible light emitting device |
US11437548B2 (en) | 2020-10-23 | 2022-09-06 | Creeled, Inc. | Pixelated-LED chips with inter-pixel underfill materials, and fabrication methods |
US11626538B2 (en) | 2020-10-29 | 2023-04-11 | Lumileds Llc | Light emitting diode device with tunable emission |
US11901491B2 (en) | 2020-10-29 | 2024-02-13 | Lumileds Llc | Light emitting diode devices |
US12040432B2 (en) | 2020-10-30 | 2024-07-16 | Lumileds Llc | Light emitting diode devices with patterned TCO layer including different thicknesses |
US11631786B2 (en) | 2020-11-12 | 2023-04-18 | Lumileds Llc | III-nitride multi-wavelength LED arrays with etch stop layer |
US11705534B2 (en) | 2020-12-01 | 2023-07-18 | Lumileds Llc | Methods of making flip chip micro light emitting diodes |
US11955583B2 (en) | 2020-12-01 | 2024-04-09 | Lumileds Llc | Flip chip micro light emitting diodes |
US11600656B2 (en) | 2020-12-14 | 2023-03-07 | Lumileds Llc | Light emitting diode device |
US11935987B2 (en) | 2021-11-03 | 2024-03-19 | Lumileds Llc | Light emitting diode arrays with a light-emitting pixel area |
Family Cites Families (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3954534A (en) | 1974-10-29 | 1976-05-04 | Xerox Corporation | Method of forming light emitting diode array with dome geometry |
DE2633191A1 (de) | 1976-07-23 | 1978-01-26 | Siemens Ag | Lumineszenzstrahlung erzeugendes bauelement mit grosser strahlungsausbeute |
JPS6430277A (en) * | 1987-07-27 | 1989-02-01 | Hitachi Ltd | Light convergent type light-emitting device |
US4866005A (en) | 1987-10-26 | 1989-09-12 | North Carolina State University | Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide |
US4946547A (en) | 1989-10-13 | 1990-08-07 | Cree Research, Inc. | Method of preparing silicon carbide surfaces for crystal growth |
US5200022A (en) | 1990-10-03 | 1993-04-06 | Cree Research, Inc. | Method of improving mechanically prepared substrate surfaces of alpha silicon carbide for deposition of beta silicon carbide thereon and resulting product |
JP3152708B2 (ja) * | 1991-12-12 | 2001-04-03 | 株式会社東芝 | 半導体発光素子 |
GB2270199B (en) * | 1992-08-25 | 1995-05-10 | Mitsubishi Cable Ind Ltd | Semiconductor light emitting element |
JP3139890B2 (ja) | 1992-08-25 | 2001-03-05 | 三菱電線工業株式会社 | 半導体発光素子 |
US5359208A (en) | 1993-02-26 | 1994-10-25 | Nippon Sheet Glass Co., Ltd. | Chip package with microlens array |
JP2778405B2 (ja) * | 1993-03-12 | 1998-07-23 | 日亜化学工業株式会社 | 窒化ガリウム系化合物半導体発光素子 |
JPH06338630A (ja) * | 1993-05-28 | 1994-12-06 | Omron Corp | 半導体発光素子、並びに当該発光素子を用いた光学検知装置、光学的情報処理装置、光結合装置及び発光装置 |
TW253999B (ja) | 1993-06-30 | 1995-08-11 | Hitachi Cable | |
JP3316062B2 (ja) * | 1993-12-09 | 2002-08-19 | 株式会社東芝 | 半導体発光素子 |
JPH07176788A (ja) | 1993-12-17 | 1995-07-14 | Sharp Corp | 発光ダイオード |
US5557115A (en) * | 1994-08-11 | 1996-09-17 | Rohm Co. Ltd. | Light emitting semiconductor device with sub-mount |
JP3257286B2 (ja) * | 1994-10-17 | 2002-02-18 | 日立電線株式会社 | 発光ダイオードの製造方法 |
US5814839A (en) * | 1995-02-16 | 1998-09-29 | Sharp Kabushiki Kaisha | Semiconductor light-emitting device having a current adjusting layer and a uneven shape light emitting region, and method for producing same |
JP3633018B2 (ja) | 1995-02-16 | 2005-03-30 | 昭和電工株式会社 | 半導体発光装置 |
US5614734A (en) * | 1995-03-15 | 1997-03-25 | Yale University | High efficency LED structure |
JPH0936431A (ja) * | 1995-07-13 | 1997-02-07 | Toshiba Corp | 半導体発光素子 |
DE19629920B4 (de) | 1995-08-10 | 2006-02-02 | LumiLeds Lighting, U.S., LLC, San Jose | Licht-emittierende Diode mit einem nicht-absorbierenden verteilten Braggreflektor |
US5779924A (en) * | 1996-03-22 | 1998-07-14 | Hewlett-Packard Company | Ordered interface texturing for a light emitting device |
JP3233569B2 (ja) * | 1996-03-22 | 2001-11-26 | シャープ株式会社 | 半導体発光素子 |
JP3448441B2 (ja) * | 1996-11-29 | 2003-09-22 | 三洋電機株式会社 | 発光装置 |
JP3439063B2 (ja) * | 1997-03-24 | 2003-08-25 | 三洋電機株式会社 | 半導体発光素子および発光ランプ |
JPH10270758A (ja) * | 1997-03-26 | 1998-10-09 | Toyoda Gosei Co Ltd | 窒化ガリウム系化合物半導体素子 |
JP2998696B2 (ja) * | 1997-05-17 | 2000-01-11 | 日亜化学工業株式会社 | 発光ダイオード |
JPH11121795A (ja) * | 1997-10-16 | 1999-04-30 | Stanley Electric Co Ltd | 発光ダイオード及びその製造方法 |
JPH11220171A (ja) * | 1998-02-02 | 1999-08-10 | Toyoda Gosei Co Ltd | 窒化ガリウム系化合物半導体素子 |
US6091085A (en) * | 1998-02-19 | 2000-07-18 | Agilent Technologies, Inc. | GaN LEDs with improved output coupling efficiency |
GB9807692D0 (en) | 1998-04-14 | 1998-06-10 | Univ Strathclyde | Optival devices |
EP0977277A1 (en) | 1998-07-28 | 2000-02-02 | Interuniversitair Microelektronica Centrum Vzw | Devices for emitting radiation with a high efficiency and a method for fabricating such devices |
US6133589A (en) * | 1999-06-08 | 2000-10-17 | Lumileds Lighting, U.S., Llc | AlGaInN-based LED having thick epitaxial layer for improved light extraction |
US6614056B1 (en) * | 1999-12-01 | 2003-09-02 | Cree Lighting Company | Scalable led with improved current spreading structures |
WO2001041225A2 (en) | 1999-12-03 | 2001-06-07 | Cree Lighting Company | Enhanced light extraction in leds through the use of internal and external optical elements |
US6410942B1 (en) * | 1999-12-03 | 2002-06-25 | Cree Lighting Company | Enhanced light extraction through the use of micro-LED arrays |
EP1256750A4 (en) | 2000-02-18 | 2003-05-07 | Hitachi Ltd | FLOW LIMITATION VALVE, MOTOR TYPE, AND MANUFACTURING METHOD THEREOF |
JP3595277B2 (ja) * | 2001-03-21 | 2004-12-02 | 三菱電線工業株式会社 | GaN系半導体発光ダイオード |
-
2000
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CA2393081A1 (en) | 2001-06-07 |
MY124997A (en) | 2006-07-31 |
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AU4139101A (en) | 2001-06-12 |
US6657236B1 (en) | 2003-12-02 |
CN1423842A (zh) | 2003-06-11 |
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CN1292493C (zh) | 2006-12-27 |
US6821804B2 (en) | 2004-11-23 |
EP2270883A2 (en) | 2011-01-05 |
JP5965095B2 (ja) | 2016-08-10 |
MY127035A (en) | 2006-11-30 |
JP2004511080A (ja) | 2004-04-08 |
EP2270883A3 (en) | 2015-09-30 |
US20040041164A1 (en) | 2004-03-04 |
TW465130B (en) | 2001-11-21 |
CA2393081C (en) | 2011-10-11 |
JP2013012781A (ja) | 2013-01-17 |
EP1234344A2 (en) | 2002-08-28 |
WO2001041225A2 (en) | 2001-06-07 |
WO2001041225A3 (en) | 2002-01-03 |
KR20030017462A (ko) | 2003-03-03 |
HK1048709A1 (zh) | 2003-04-11 |
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