JP6719424B2 - 半導体発光素子および半導体発光素子の製造方法 - Google Patents
半導体発光素子および半導体発光素子の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 78
- 238000000034 method Methods 0.000 title claims description 42
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 238000000605 extraction Methods 0.000 claims description 100
- 238000001312 dry etching Methods 0.000 claims description 92
- 238000005530 etching Methods 0.000 claims description 33
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 25
- 229910002601 GaN Inorganic materials 0.000 claims description 14
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 14
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052594 sapphire Inorganic materials 0.000 claims description 8
- 239000010980 sapphire Substances 0.000 claims description 8
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 6
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 177
- 239000000463 material Substances 0.000 description 39
- 239000000758 substrate Substances 0.000 description 32
- 238000005253 cladding Methods 0.000 description 24
- 230000008569 process Effects 0.000 description 18
- 230000001965 increasing effect Effects 0.000 description 14
- 230000004048 modification Effects 0.000 description 8
- 238000012986 modification Methods 0.000 description 8
- 238000001020 plasma etching Methods 0.000 description 7
- 239000000203 mixture Substances 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 239000007795 chemical reaction product Substances 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- -1 AlGaN Chemical compound 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000003631 expected effect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
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Description
平面視において、外郭が六角形に近似した形状を有しており、六角形と円形の中間の形状を有する。ここで、「六角形と円形の中間の形状」とは、六角形とその内接円の間の領域内に輪郭線がおおむね位置するような形状であり、七角形以上の多角形(例えば、八角形、十二角形、二十四角形)や、六角形以上の多角形の角に丸みを持たせたような形状のことをいう。例えば、六角形とその内接円の間の領域の面積の10%以上、好ましくは20%以上が輪郭線の内側に含まれるような形状であってもよい。このような「六角形と円形の中間の形状」の場合、基準となる円形(例えば、内接円)の面積に比べて占める面積が大きくなる。このようにして、錐形状部52の外郭を六角形に近似させて「六角形と円形の中間の形状」にすることにより、第2主面22bの平面視の単位面積あたりに複数の錐形状部52が占める面積の割合を大きくすることができる。例えば、円形状の錐形状部を六方最密充填した場合には充填率が90%程度となるが、錐形状部52の外郭を六角形に近似させることにより、充填率を91%以上にできる。
1部分53は、高さ方向に直交する断面形状が六角形または六角形と円形の中間の形状を有する一方、第2部分54は、高さ方向に直交する断面形状が第1部分に比べて円形に近い形状を有してもよい。例えば、第2部分54の高さ方向に直交する断面形状は、第1部分53の高さ方向に直交する断面形状に比べて角部の丸みが大きく、角部の曲率が小さい(つまり、曲率半径が大きい)形状を有してもよい。なお、第1部分53と第2部分54の形状差を真円度により規定してもよく、例えばJIS規格(JIS B 0621−1984)に定める最大曲率半径と最小曲率半径の差の大小により円形に相対的に近い形状であるか否かが判別されてもよい。この場合、第2部分54は、第1部分53よりも真円度の小さい形状であってもよい。
図4は、半導体発光素子10の製造方法を示すフローチャートである。まず、光取出層を備える発光素子を準備し(S10)、光取出層上にアレイ状パターンの樹脂マスクを形成する(S12)。つづいて、マスクの上からマスクと光取出層をドライエッチングし、マスク全体が除去されるまでエッチングする第1ドライエッチング工程を実行する(S14)。つづいて、第1ドライエッチング工程にてマスクが除去されてから光取出層をさらにドライエッチングする第2ドライエッチング工程を実行する(S16)。本実施の形態では、マスクが除去されるまでの第1ドライエッチング工程と、マスクが除去されてからさらにオーバエッチングする第2ドライエッチング工程とを実行する。
前記光取出面の平面視において、前記光取出面の単位面積あたりに前記複数の錐形状部が占める面積の割合が65%以上95%以下であり、
隣接する錐形状部の頂点間の距離pに対する前記錐形状部の高さhの割合であるアスペクト比h/pが0.3以上1.0以下であることを特徴とする半導体発光素子。
前記第2部分は、前記第1部分より前記錐形状部の頂部に近く、前記第1部分より高さが大きくてよい。
前記光取出層は、前記ベース構造体のサファイア層、AlN層または酸化シリコン(SiOx)層、窒化ケイ素層(SiNx)もしくは酸化アルミニウム層(Al2O3)であってよい。
前記光取出層上にアレイ状のパターンを有するマスクを形成する工程と、
前記マスクの上から前記マスクおよび前記光取出層をエッチングする工程と、を備え、
前記エッチングする工程は、前記マスクの全体が除去されるまでドライエッチングする第1ドライエッチング工程と、前記マスクが除去されてから前記光取出層をさらにドライエッチングする第2ドライエッチング工程とを含み、
前記第1ドライエッチング工程にて、前記光取出面に複数の錐形状部がアレイ状に形成され、隣接する錐形状部の頂点間の距離pに対する前記錐形状部の高さhの割合であるアスペクト比h/pが1.1以上となり、
前記第2ドライエッチング工程にて、前記複数の錐形状部がさらにエッチングされ、前記錐形状部のアスペクト比h/pが0.3以上1.0以下となってよい。
前記錐形状部は、側面の傾斜角が第1角度である第1部分と、側面の傾斜角が前記第1角度より小さい第2角度である第2部分とを有し、
前記第2部分は、前記第1部分より前記錐形状部の頂部に近く、前記第1部分より高さが大きいことを特徴とする半導体発光素子。
前記光取出層上にアレイ状のパターンを有するマスクを形成する工程と、
前記マスクの上から前記マスクおよび前記光取出層をエッチングする工程と、を備え、
前記エッチングする工程は、前記マスクの全体が除去されるまでドライエッチングする第1ドライエッチング工程と、前記マスクが除去されてから前記光取出層をさらにドライエッチングする第2ドライエッチング工程とを含み、
前記第1ドライエッチング工程にて、前記光取出面に複数の錐形状部がアレイ状に形成され、
前記第2ドライエッチング工程にて、前記複数の錐形状部がさらにエッチングされ、側面の傾斜角が第1角度である第1部分と、側面の傾斜角が前記第1角度より小さい第2角度である第2部分とを有する錐形状部が形成されることを特徴とする半導体発光素子の製造方法。
Claims (8)
- 光取出面を有する光取出層を備える半導体発光素子であって、前記光取出面にアレイ状に形成される複数の錐形状部を備え、
前記錐形状部は、側面の傾斜角が第1角度である第1部分と、側面の傾斜角が前記第1角度より小さい第2角度である第2部分とを有し、
前記第2部分は、前記第1部分より前記錐形状部の頂部に近く、前記第1部分より高さが大きいことを特徴とする半導体発光素子。 - 前記第2部分の高さは、前記錐形状部の高さの50%以上80%以下であることを特徴とする請求項1に記載の半導体発光素子。
- 前記第1角度は、60度以上85度以下であり、前記第2角度は、40度以上60度以下であることを特徴とする請求項1または2に記載の半導体発光素子。
- 前記第1角度と前記第2角度の差は、20度以上であることを特徴とする請求項1または3のいずれか一項に記載の半導体発光素子。
- 前記光取出面の平面視において、前記光取出面の単位面積あたりに前記複数の錐形状部が占める面積の割合が65%以上95%以下であることを特徴とする請求項1または2に記載の半導体発光素子。
- 前記錐形状部の高さ方向に直交する断面視において、前記第1部分が六角形または六角形と円形の中間の形状であり、前記第2部分が前記第1部分より円形に近い形状であることを特徴とする請求項1から5のいずれか一項に記載の半導体発光素子。
- 前記半導体発光素子は、サファイア(Al2O3)層および窒化アルミニウム(AlN)層の少なくとも一方を含むベース構造体と、前記ベース構造体の上に形成され、波長200nm以上400nm以下の紫外光を発する窒化アルミニウムガリウム(AlGaN)系または窒化ガリウム(GaN)系半導体層を含む発光構造体と、を備え、
前記光取出層は、前記ベース構造体のサファイア層、AlN層または酸化シリコン(SiOx)層、窒化ケイ素層(SiNx)もしくは酸化アルミニウム層(Al2O3)であることを特徴とする請求項1から6のいずれか一項に記載の半導体発光素子。 - 光取出面を有する光取出層を備える半導体発光素子の製造方法であって、
前記光取出層上にアレイ状のパターンを有するマスクを形成する工程と、
前記マスクの上から前記マスクおよび前記光取出層をエッチングする工程と、を備え、
前記エッチングする工程は、前記マスクの全体が除去されるまでドライエッチングする第1ドライエッチング工程と、前記マスクが除去されてから前記光取出層をさらにドライエッチングする第2ドライエッチング工程とを含み、
前記第1ドライエッチング工程にて、前記光取出面に複数の錐形状部がアレイ状に形成され、
前記第2ドライエッチング工程にて、前記複数の錐形状部がさらにエッチングされ、側面の傾斜角が第1角度である第1部分と、側面の傾斜角が前記第1角度より小さい第2角度である第2部分とを有する錐形状部が形成されることを特徴とする半導体発光素子の製造方法。
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