JP7255965B2 - 半導体発光素子の製造方法 - Google Patents
半導体発光素子の製造方法 Download PDFInfo
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- JP7255965B2 JP7255965B2 JP2017161277A JP2017161277A JP7255965B2 JP 7255965 B2 JP7255965 B2 JP 7255965B2 JP 2017161277 A JP2017161277 A JP 2017161277A JP 2017161277 A JP2017161277 A JP 2017161277A JP 7255965 B2 JP7255965 B2 JP 7255965B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
Description
Claims (2)
- 第1主面と、前記第1主面とは反対側の第2主面とを有する光取出層と、前記光取出層の前記第1主面上に設けられる発光構造体と、を備える積層体を用意する工程と、
前記第2主面の一部領域に複数の柱状体を有するパターンマスクを形成する工程と、
前記パターンマスクが形成される領域に凹凸構造が形成され、前記パターンマスクが形成されずに露出する領域に平坦面により構成される底面を有する凹部が形成されるように前記第2主面をドライエッチングする工程と、
前記平坦面にレーザを照射し、前記平坦面の位置で少なくとも前記光取出層を切断して前記積層体を個片化する工程と、を備えることを特徴とする半導体発光素子の製造方法。 - 前記光取出層は、サファイア(Al2O3)層、窒化アルミニウム(AlN)層、酸化シリコン(SiOx)層、窒化ケイ素層(SiNx)または酸化アルミニウム層(Al2O3)であり、
前記発光構造体は、波長200nm以上360nm以下の紫外光を発する窒化アルミニウムガリウム(AlGaN)系半導体層を含むことを特徴とする請求項1に記載の半導体発光素子の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017161277A JP7255965B2 (ja) | 2017-08-24 | 2017-08-24 | 半導体発光素子の製造方法 |
US16/111,672 US10665751B2 (en) | 2017-08-24 | 2018-08-24 | Semiconductor light-emitting device and method of manufacturing semiconductor light-emitting device |
US16/838,468 US11164996B2 (en) | 2017-08-24 | 2020-04-02 | Semiconductor light-emitting device and method of manufacturing semiconductor light-emitting device |
Applications Claiming Priority (1)
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JP2017161277A JP7255965B2 (ja) | 2017-08-24 | 2017-08-24 | 半導体発光素子の製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2019040980A JP2019040980A (ja) | 2019-03-14 |
JP7255965B2 true JP7255965B2 (ja) | 2023-04-11 |
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JP2017161277A Active JP7255965B2 (ja) | 2017-08-24 | 2017-08-24 | 半導体発光素子の製造方法 |
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US (2) | US10665751B2 (ja) |
JP (1) | JP7255965B2 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6719424B2 (ja) * | 2017-06-26 | 2020-07-08 | 日機装株式会社 | 半導体発光素子および半導体発光素子の製造方法 |
WO2020019326A1 (zh) * | 2018-07-27 | 2020-01-30 | 天津三安光电有限公司 | 一种半导体发光元件 |
US11271136B2 (en) * | 2018-11-07 | 2022-03-08 | Seoul Viosys Co., Ltd | Light emitting device |
JP7169513B2 (ja) * | 2019-12-23 | 2022-11-11 | 日亜化学工業株式会社 | 発光素子の製造方法 |
WO2021138773A1 (zh) * | 2020-01-06 | 2021-07-15 | 厦门三安光电有限公司 | 一种发光二极管及其制作方法 |
JP7428564B2 (ja) | 2020-03-25 | 2024-02-06 | 日機装株式会社 | 半導体発光素子 |
WO2021192697A1 (ja) * | 2020-03-25 | 2021-09-30 | 富士フイルム株式会社 | 構造体の製造方法 |
WO2021192696A1 (ja) * | 2020-03-25 | 2021-09-30 | 富士フイルム株式会社 | 構造体の製造方法及び構造体 |
JP7089204B2 (ja) * | 2020-06-09 | 2022-06-22 | 日亜化学工業株式会社 | 発光装置の製造方法 |
WO2024074702A1 (en) * | 2022-10-06 | 2024-04-11 | Ams-Osram International Gmbh | Light emitting device |
Citations (6)
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JP2013125836A (ja) | 2011-12-14 | 2013-06-24 | Panasonic Corp | サファイア基板のエッチング方法 |
US20140209949A1 (en) | 2013-01-25 | 2014-07-31 | Epistar Corporation | Light-emitting element comprising a reflective structure with high efficiency |
JP2014527313A (ja) | 2011-09-16 | 2014-10-09 | ソウル バイオシス カンパニー リミテッド | 発光ダイオード及びそれを製造する方法 |
US20140299901A1 (en) | 2013-04-08 | 2014-10-09 | Epistar Corporation | Light emitting diode and manufacturing method thereof |
JP2014229648A (ja) | 2013-05-20 | 2014-12-08 | シャープ株式会社 | 半導体発光素子 |
JP2015201488A (ja) | 2014-04-04 | 2015-11-12 | 旭化成イーマテリアルズ株式会社 | 積層体、及びこれを用いた発光素子の製造方法 |
Family Cites Families (13)
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JP2005354020A (ja) * | 2004-05-10 | 2005-12-22 | Univ Meijo | 半導体発光素子製造方法および半導体発光素子 |
JP2008160063A (ja) * | 2006-10-20 | 2008-07-10 | Mitsubishi Chemicals Corp | 窒化物半導体発光ダイオード素子 |
JP2008130799A (ja) * | 2006-11-21 | 2008-06-05 | Sharp Corp | 半導体発光素子および半導体発光素子の製造方法 |
JP5261711B2 (ja) * | 2007-09-27 | 2013-08-14 | ローム株式会社 | ZnO系半導体及びZnO系半導体素子 |
JP5074138B2 (ja) * | 2007-09-27 | 2012-11-14 | 昭和電工株式会社 | 発光ダイオードの製造方法 |
JP2009105123A (ja) * | 2007-10-22 | 2009-05-14 | Showa Denko Kk | 発光ダイオードおよびその製造方法 |
JP5770446B2 (ja) * | 2010-09-30 | 2015-08-26 | 株式会社ディスコ | 分割方法 |
WO2012176369A1 (ja) * | 2011-06-24 | 2012-12-27 | パナソニック株式会社 | 窒化ガリウム系半導体発光素子、光源および凹凸構造形成方法 |
JP5829453B2 (ja) * | 2011-08-09 | 2015-12-09 | スタンレー電気株式会社 | 半導体発光素子 |
US10069049B2 (en) * | 2013-07-30 | 2018-09-04 | National Institute Of Information And Communicatio | Semiconductor light emitting element and method for manufacturing the same |
WO2015030391A1 (ko) * | 2013-09-02 | 2015-03-05 | 엘지이노텍(주) | 발광 소자 |
JP2015170710A (ja) * | 2014-03-06 | 2015-09-28 | 旭化成株式会社 | 窒化物半導体素子の製造方法、窒化物半導体ウェハの分割方法および窒化物半導体素子 |
JP2016046461A (ja) * | 2014-08-26 | 2016-04-04 | 豊田合成株式会社 | 半導体発光素子ウエハ及び半導体発光素子並びに半導体発光素子の製造方法 |
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- 2017-08-24 JP JP2017161277A patent/JP7255965B2/ja active Active
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2018
- 2018-08-24 US US16/111,672 patent/US10665751B2/en active Active
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- 2020-04-02 US US16/838,468 patent/US11164996B2/en active Active
Patent Citations (6)
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JP2014527313A (ja) | 2011-09-16 | 2014-10-09 | ソウル バイオシス カンパニー リミテッド | 発光ダイオード及びそれを製造する方法 |
JP2013125836A (ja) | 2011-12-14 | 2013-06-24 | Panasonic Corp | サファイア基板のエッチング方法 |
US20140209949A1 (en) | 2013-01-25 | 2014-07-31 | Epistar Corporation | Light-emitting element comprising a reflective structure with high efficiency |
US20140299901A1 (en) | 2013-04-08 | 2014-10-09 | Epistar Corporation | Light emitting diode and manufacturing method thereof |
JP2014229648A (ja) | 2013-05-20 | 2014-12-08 | シャープ株式会社 | 半導体発光素子 |
JP2015201488A (ja) | 2014-04-04 | 2015-11-12 | 旭化成イーマテリアルズ株式会社 | 積層体、及びこれを用いた発光素子の製造方法 |
Also Published As
Publication number | Publication date |
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US11164996B2 (en) | 2021-11-02 |
JP2019040980A (ja) | 2019-03-14 |
US10665751B2 (en) | 2020-05-26 |
US20190067519A1 (en) | 2019-02-28 |
US20200235265A1 (en) | 2020-07-23 |
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