JP5261711B2 - ZnO系半導体及びZnO系半導体素子 - Google Patents
ZnO系半導体及びZnO系半導体素子 Download PDFInfo
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- JP5261711B2 JP5261711B2 JP2007251482A JP2007251482A JP5261711B2 JP 5261711 B2 JP5261711 B2 JP 5261711B2 JP 2007251482 A JP2007251482 A JP 2007251482A JP 2007251482 A JP2007251482 A JP 2007251482A JP 5261711 B2 JP5261711 B2 JP 5261711B2
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- zno
- based semiconductor
- nitrogen
- mgzno
- substrate
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- 239000004065 semiconductor Substances 0.000 title claims description 57
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 96
- 239000000758 substrate Substances 0.000 claims description 73
- 229910052757 nitrogen Inorganic materials 0.000 claims description 48
- 239000013078 crystal Substances 0.000 claims description 43
- 238000005424 photoluminescence Methods 0.000 claims description 26
- 238000009826 distribution Methods 0.000 claims description 22
- 238000005259 measurement Methods 0.000 claims description 18
- 230000003595 spectral effect Effects 0.000 claims description 9
- 239000010410 layer Substances 0.000 description 35
- 239000010408 film Substances 0.000 description 25
- 239000010409 thin film Substances 0.000 description 24
- 230000000694 effects Effects 0.000 description 12
- 239000000370 acceptor Substances 0.000 description 11
- 239000007789 gas Substances 0.000 description 8
- 239000012535 impurity Substances 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- 230000005284 excitation Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 238000000295 emission spectrum Methods 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000000116 mitigating effect Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- UIZLQMLDSWKZGC-UHFFFAOYSA-N cadmium helium Chemical compound [He].[Cd] UIZLQMLDSWKZGC-UHFFFAOYSA-N 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000103 photoluminescence spectrum Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02554—Oxides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
- H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/28—Materials of the light emitting region containing only elements of Group II and Group VI of the Periodic Table
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02414—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02469—Group 12/16 materials
- H01L21/02472—Oxides
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Led Devices (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Physical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
A.Tsukazaki et al., JJAP 44 (2005) L643 A. Tsukazaki et al Nature Material 4 (2005) 42 M.Sumiya et al.,Applied Surface Science 223(2004)p.206
EDAP=EG−ED−EA+(e2/4πε0εrrDA)−(mhωLO/2π)
となる。ここで、mは0以上の整数である。
DAPの発光ピーク位置というのは、上記式のように決定されるので、通常はドナー、アクセプタの種類、およびその濃度が決まれば、決定されるものである。
f(x)={K/(2π)1/2}×exp{−(x−m)2/2σ2}
で表わされる。ここで、mは平均又は中央値、σは標準偏差、Kは定数を示す。
RMS={(1/l)×∫(f(x))2dx}1/2(積分区間は0〜lまで)となる。
2 窒素ドープMgZnO層
Claims (10)
- 窒素がドープされたMgXZn1−XO(0<X<1)結晶体で構成されたZnO系半導体であって、
前記ZnO系半導体の絶対温度12ケルビンにおけるフォトルミネッセンス測定によるスペクトル分布曲線で、
3.3eV以上の前記分布曲線の積分強度A、
2.7eV以上の前記分布曲線の積分強度Bとした場合、
(A/B)≧0.3を満たしていることを特徴とするZnO系半導体。 - 前記(A/B)は0.4以上であることを特徴とする請求項1に記載のZnO系半導体。
- 窒素がドープされたMgXZn1−XO(0<X<1)結晶体で構成されたZnO系半導体であって、
前記ZnO系半導体の絶対温度12ケルビンにおけるフォトルミネッセンス測定によるスペクトル分布曲線で、
3.3eV以上の前記分布曲線の積分強度A、
2.7eV以上の前記分布曲線の積分強度Bとした場合、
{A/(B−A)}≧1を満たしていることを特徴とするZnO系半導体。 - 前記積分強度Aを求める場合は、3.3eV以上の前記分布曲線をガウシアンカーブで近似し、該ガウシアンカーブを積分することを特徴とする請求項1〜請求項3のいずれか1項に記載のZnO系半導体。
- 前記3.3eV以上の分布曲線に発光ピークが複数存在する場合には、それぞれの発光ピークをガウシアンカーブで近似することを特徴とする請求項4記載のZnO系半導体。
- 前記窒素ドープの濃度は1×1018cm−3以上であることを特徴とする請求項1〜請求項5のいずれか1項に記載のZnO系半導体。
- 前記結晶体は、Mgの組成比率が異なるMgXnZn1−XnO(0≦Xn<1)が複数積層された積層体であって、少なくとも1つのMgZnO膜には、窒素が1×1018cm−3以上の濃度でドープされていることを特徴とする請求項1〜請求項5のいずれか1項に記載のZnO系半導体。
- 前記結晶体は、結晶成長方向側の主面がC面を有するMgZnO基板と該MgZnO基板に形成されたMgYZn1−YO(0<Y<1)膜とで構成されており、前記主面の法線を基板結晶軸のm軸c軸平面に投影した投影軸が、m軸方向に3度以内の範囲で傾斜していることを特徴とする請求項1〜請求項7のいずれか1項に記載のZnO系半導体。
- 前記結晶体は、750℃以上の成長温度で結晶成長させることを特徴とする請求項1〜請求項8のいずれか1項に記載のZnO系半導体。
- 請求項1〜請求項9のいずれか1項に記載のZnO系半導体を備えたZnO系半導体素子。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007251482A JP5261711B2 (ja) | 2007-09-27 | 2007-09-27 | ZnO系半導体及びZnO系半導体素子 |
US12/680,406 US20100230671A1 (en) | 2007-09-27 | 2008-09-26 | Zno-based semiconductor and zno-based semiconductor device |
PCT/JP2008/067516 WO2009041631A1 (ja) | 2007-09-27 | 2008-09-26 | ZnO系半導体及びZnO系半導体素子 |
TW097137292A TW200937679A (en) | 2007-09-27 | 2008-09-26 | ZnO-based semiconductor and ZnO-based semiconductor element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007251482A JP5261711B2 (ja) | 2007-09-27 | 2007-09-27 | ZnO系半導体及びZnO系半導体素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009078959A JP2009078959A (ja) | 2009-04-16 |
JP5261711B2 true JP5261711B2 (ja) | 2013-08-14 |
Family
ID=40511511
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007251482A Expired - Fee Related JP5261711B2 (ja) | 2007-09-27 | 2007-09-27 | ZnO系半導体及びZnO系半導体素子 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20100230671A1 (ja) |
JP (1) | JP5261711B2 (ja) |
TW (1) | TW200937679A (ja) |
WO (1) | WO2009041631A1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5638772B2 (ja) * | 2009-05-25 | 2014-12-10 | スタンレー電気株式会社 | 酸化亜鉛系半導体の成長方法及び半導体発光素子の製造方法 |
JP5355221B2 (ja) | 2009-05-25 | 2013-11-27 | スタンレー電気株式会社 | 酸化亜鉛系半導体の成長方法及び半導体発光素子の製造方法 |
JP2011049448A (ja) * | 2009-08-28 | 2011-03-10 | Mitsubishi Chemicals Corp | 酸化亜鉛系基板及び酸化亜鉛系基板の製造方法 |
JP2013028519A (ja) * | 2011-06-24 | 2013-02-07 | Fujikura Ltd | 窒素ドープ酸化亜鉛系薄膜の製造方法 |
TWI617047B (zh) * | 2017-06-30 | 2018-03-01 | 膠囊化基板、製造方法及具該基板的高能隙元件 | |
JP7255965B2 (ja) | 2017-08-24 | 2023-04-11 | 日機装株式会社 | 半導体発光素子の製造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002289918A (ja) * | 2001-03-26 | 2002-10-04 | Sharp Corp | p型半導体結晶の製造方法および発光デバイス |
JP4567910B2 (ja) * | 2001-05-01 | 2010-10-27 | スタンレー電気株式会社 | 半導体結晶の成長方法 |
JP2005340384A (ja) * | 2004-05-25 | 2005-12-08 | Shin Etsu Handotai Co Ltd | 化合物半導体素子の製造方法 |
-
2007
- 2007-09-27 JP JP2007251482A patent/JP5261711B2/ja not_active Expired - Fee Related
-
2008
- 2008-09-26 US US12/680,406 patent/US20100230671A1/en not_active Abandoned
- 2008-09-26 TW TW097137292A patent/TW200937679A/zh unknown
- 2008-09-26 WO PCT/JP2008/067516 patent/WO2009041631A1/ja active Application Filing
Also Published As
Publication number | Publication date |
---|---|
WO2009041631A1 (ja) | 2009-04-02 |
TW200937679A (en) | 2009-09-01 |
JP2009078959A (ja) | 2009-04-16 |
US20100230671A1 (en) | 2010-09-16 |
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