JP6564348B2 - 深紫外発光素子 - Google Patents
深紫外発光素子 Download PDFInfo
- Publication number
- JP6564348B2 JP6564348B2 JP2016113017A JP2016113017A JP6564348B2 JP 6564348 B2 JP6564348 B2 JP 6564348B2 JP 2016113017 A JP2016113017 A JP 2016113017A JP 2016113017 A JP2016113017 A JP 2016113017A JP 6564348 B2 JP6564348 B2 JP 6564348B2
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- Prior art keywords
- layer
- deep ultraviolet
- light extraction
- ultraviolet light
- substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
- H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
Description
Claims (5)
- 第1主面と、前記第1主面の反対側の第2主面とを有し、AlNで構成される基板と、
前記基板の前記第1主面上に設けられ、AlGaNで構成される活性層と、
前記基板の前記第2主面上に設けられ、前記活性層よりもAlN組成比の高いAlGaNで構成される光取出層と、を備えることを特徴とする深紫外発光素子。 - 前記基板の前記第1主面と前記活性層の間に設けられ、前記活性層よりもAlN組成比の高いAlGaNで構成されるベース層をさらに備えることを特徴とする請求項1に記載の深紫外発光素子。
- 前記光取出層は、前記活性層が発する深紫外光に対する吸収係数が5×104/cm以下の材料であることを特徴とする請求項1または2に記載の深紫外発光素子。
- 前記光取出層の厚さが50nm以上であることを特徴とする請求項1から3のいずれか一項に記載の深紫外発光素子。
- 前記光取出層は、微細な凹凸構造が形成された光取出面を有することを特徴とする請求項1から4のいずれか一項に記載の深紫外発光素子。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016113017A JP6564348B2 (ja) | 2016-06-06 | 2016-06-06 | 深紫外発光素子 |
PCT/JP2017/014239 WO2017212766A1 (ja) | 2016-06-06 | 2017-04-05 | 深紫外発光素子 |
US16/190,855 US20190081215A1 (en) | 2016-06-06 | 2018-11-14 | Deep ultraviolet light emitting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016113017A JP6564348B2 (ja) | 2016-06-06 | 2016-06-06 | 深紫外発光素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017220535A JP2017220535A (ja) | 2017-12-14 |
JP6564348B2 true JP6564348B2 (ja) | 2019-08-21 |
Family
ID=60577770
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016113017A Active JP6564348B2 (ja) | 2016-06-06 | 2016-06-06 | 深紫外発光素子 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20190081215A1 (ja) |
JP (1) | JP6564348B2 (ja) |
WO (1) | WO2017212766A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6719424B2 (ja) * | 2017-06-26 | 2020-07-08 | 日機装株式会社 | 半導体発光素子および半導体発光素子の製造方法 |
JP7007923B2 (ja) | 2018-01-16 | 2022-01-25 | 日機装株式会社 | 半導体発光素子および半導体発光素子の製造方法 |
TWI666789B (zh) * | 2018-03-13 | 2019-07-21 | 國立交通大學 | 紫外光發光二極體的製造方法 |
US11271136B2 (en) * | 2018-11-07 | 2022-03-08 | Seoul Viosys Co., Ltd | Light emitting device |
CN114023856A (zh) * | 2021-09-30 | 2022-02-08 | 厦门士兰明镓化合物半导体有限公司 | 发光二极管及其制造方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006222288A (ja) * | 2005-02-10 | 2006-08-24 | Toshiba Corp | 白色led及びその製造方法 |
JP2006278751A (ja) * | 2005-03-29 | 2006-10-12 | Mitsubishi Cable Ind Ltd | GaN系半導体発光素子 |
JP2011091195A (ja) * | 2009-10-22 | 2011-05-06 | Kyocera Corp | 発光素子及び発光装置 |
JP6429626B2 (ja) * | 2011-09-06 | 2018-11-28 | センサー エレクトロニック テクノロジー インコーポレイテッド | 層成長のためのパターンを有する基板の設計 |
JP6002427B2 (ja) * | 2012-04-19 | 2016-10-05 | 旭化成株式会社 | Led用基板及びその製造方法 |
JP2013232478A (ja) * | 2012-04-27 | 2013-11-14 | Toshiba Corp | 半導体発光装置及びその製造方法 |
KR102059030B1 (ko) * | 2012-09-24 | 2019-12-24 | 엘지이노텍 주식회사 | 자외선 발광 소자 |
US20160005919A1 (en) * | 2013-02-05 | 2016-01-07 | Tokuyama Corporation | Nitride semiconductor light emitting device |
KR102066620B1 (ko) * | 2013-07-18 | 2020-01-16 | 엘지이노텍 주식회사 | 발광 소자 |
KR20150039926A (ko) * | 2013-10-04 | 2015-04-14 | 엘지이노텍 주식회사 | 발광소자 |
JP2015119108A (ja) * | 2013-12-19 | 2015-06-25 | パナソニックIpマネジメント株式会社 | 紫外線発光素子 |
KR102212666B1 (ko) * | 2014-06-27 | 2021-02-05 | 엘지이노텍 주식회사 | 발광소자 |
-
2016
- 2016-06-06 JP JP2016113017A patent/JP6564348B2/ja active Active
-
2017
- 2017-04-05 WO PCT/JP2017/014239 patent/WO2017212766A1/ja active Application Filing
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2018
- 2018-11-14 US US16/190,855 patent/US20190081215A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
WO2017212766A1 (ja) | 2017-12-14 |
US20190081215A1 (en) | 2019-03-14 |
JP2017220535A (ja) | 2017-12-14 |
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